JP3230877B2 - Method for manufacturing aluminum nitride sintered body and method for manufacturing aluminum nitride wiring board - Google Patents
Method for manufacturing aluminum nitride sintered body and method for manufacturing aluminum nitride wiring boardInfo
- Publication number
- JP3230877B2 JP3230877B2 JP02371493A JP2371493A JP3230877B2 JP 3230877 B2 JP3230877 B2 JP 3230877B2 JP 02371493 A JP02371493 A JP 02371493A JP 2371493 A JP2371493 A JP 2371493A JP 3230877 B2 JP3230877 B2 JP 3230877B2
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- Prior art keywords
- aluminum nitride
- firing
- sintered body
- protective layer
- aln
- Prior art date
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- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、窒化アルミニウム焼結
体の製造方法及び該窒化アルミニウム焼結体を用いた窒
化アルミニウム配線基板の製造方法に関する。本発明
は、電子部品等の製造に広く利用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an aluminum nitride sintered body and a method for manufacturing an aluminum nitride wiring board using the aluminum nitride sintered body. INDUSTRIAL APPLICATION This invention is widely used for manufacture of an electronic component etc.
【０００２】[0002]
【従来の技術】近年、電子機器の小型化、機能向上の要
求は大きく、半導体は集積密度を増し、多機能化、高速
化及び高出力化を目指して急速に発展してきている。そ
れにつれて半導体から発生する熱量は増加し、半導体基
板としてより熱伝導性の高い材料が求められている。従
来のアルミナ基板は熱伝導率が低く（約２０Ｗ／ｍ・
ｋ）、また熱膨張率がシリコンに比べて大きいため、シ
リコンとの接合性が悪い等の問題点があった。そこで熱
伝導率が高く、熱膨張率もシリコンに近い材料の１つと
して窒化アルミニウムが注目されている。2. Description of the Related Art In recent years, there has been a great demand for miniaturization and functional improvement of electronic equipment, and semiconductors have been rapidly developed with the aim of increasing the integration density, increasing the number of functions, increasing the speed, and increasing the output. Accordingly, the amount of heat generated from the semiconductor increases, and a material having higher thermal conductivity is required for the semiconductor substrate. Conventional alumina substrates have low thermal conductivity (about 20 W / m
k) In addition, since the coefficient of thermal expansion is larger than that of silicon, there are problems such as poor bondability with silicon. Therefore, aluminum nitride has attracted attention as one of the materials having a high thermal conductivity and a thermal expansion coefficient close to that of silicon.
【０００３】このような優れた特徴を有する窒化アルミ
ニウム焼結体に配線（パターン配線、上下導通配線）を
施す場合、高融点金属であるタングステンが使われるこ
とが多い。そしてタングステン配線を有したグリーンシ
ート体（成形体）を焼成する場合、炭素をヒーターとす
る焼成炉が使われる。この場合のヒーター等から蒸発す
る炭素等によって、窒化アルミニウムの焼結助剤として
用いる酸化イットリウム、酸化カルシウム等の各種酸化
物が還元され、焼結助剤としての働きをなくすことがあ
る。そこで炭素雰囲気から焼成体を遮断する目的で窒化
アルミニウム、窒化ホウ素（特開昭６２−７０２６９号
公報）等の容器内にグリーン成形体を収納して焼成を行
い、焼結体を製造している。When wiring (pattern wiring, vertical conductive wiring) is applied to an aluminum nitride sintered body having such excellent characteristics, tungsten, which is a high melting point metal, is often used. When firing a green sheet body (molded body) having tungsten wiring, a firing furnace using carbon as a heater is used. In this case, various oxides such as yttrium oxide and calcium oxide used as sintering aids for aluminum nitride are reduced by carbon and the like evaporated from a heater or the like, and the function as a sintering aid may be lost. Therefore, for the purpose of shielding the sintered body from the carbon atmosphere, the green molded body is housed in a container such as aluminum nitride or boron nitride (Japanese Patent Application Laid-Open No. 62-70269) and fired to produce a sintered body. .
【０００４】[0004]
【発明が解決しようとする課題】しかし、窒化アルミニ
ウム製容器は、高価で大型なものは入手しにくいという
問題がある。また、窒化ホウ素の容器は比較的安価で大
型なものが入手可能であるが、焼成時に容器から揮発す
るホウ素によって配線のタングステンがホウ化され導通
抵抗が高くなるという問題がある。本発明は、上記問題
点を解決するものであり、タングステンメタライズから
なる配線を有する窒化アルミニウム（以下、「ＡｌＮ」
という。）グリーンシート体を同時焼成する際、窒化ホ
ウ素（以下、「ＢＮ」という。）製容器を使用する場合
に問題となる、タングステン（以下、「Ｗ」という。）
のホウ化が阻止されたＡｌＮ焼結体及び配線基板の製造
方法を提供することを目的とする。However, aluminum nitride containers have a problem that expensive and large-sized containers are difficult to obtain. Although a relatively inexpensive and large-sized container of boron nitride is available, there is a problem in that boron volatilized from the container during sintering turns boron into tungsten to increase conduction resistance. The present invention has been made to solve the above-mentioned problems, and has been made of an aluminum nitride (hereinafter, “AlN”) having a wiring made of tungsten metallization.
That. ) Tungsten (hereinafter, referred to as "W"), which is a problem when using a container made of boron nitride (hereinafter, referred to as "BN") when simultaneously firing the green sheet body.
It is an object of the present invention to provide a method of manufacturing an AlN sintered body and a wiring board in which boring of the AlN is prevented.
【０００５】[0005]
【課題を解決するための手段】本第１発明のＡｌＮ焼結
体の製造方法は、配線部を有し且つ該配線部のうちの少
なくとも表面側に位置する配線部がタングステンメタラ
イズからなる窒化アルミニウム焼結体を、所定の窒化ア
ルミニウムグリーンシート体の焼成により、製造する方
法であって、上記ＡｌＮグリーンシート体の最表面に、
ＡｌＮ層、Ｗ層、又はＡｌＮ層及びＷ層の積層からなり
且つ焼成後の厚さが０．０８ｍｍ以上となる厚さの焼成
前保護層を設け、その後、ＢＮ製容器を用いて焼成を行
い、更に、必要に応じて焼成後保護層を研磨して除去す
ることを特徴とする。According to a first aspect of the present invention, there is provided a method for manufacturing an AlN sintered body, comprising an aluminum nitride having a wiring portion, wherein at least a wiring portion located on the surface side of the wiring portion is made of tungsten metallized aluminum nitride. A method for producing a sintered body by firing a predetermined aluminum nitride green sheet body, wherein the outermost surface of the AlN green sheet body is
An AlN layer, a W layer, or a pre-firing protective layer having a thickness of 0.08 mm or more after firing and made of a laminate of an AlN layer and a W layer is provided, and then firing is performed using a BN container. Further, if necessary, the protective layer is polished and removed after firing.
【０００６】本第２発明のＡｌＮ配線基板の製造方法
は、（Ａ）上記請求項１記載の製造方法により製造され
た焼成後保護層付のＡｌＮ焼結体では、その最表面に形
成された焼成後保護層を研磨して除去し、又は、（Ｂ）
焼成後保護層が除去されたＡｌＮ焼結体の場合はそれを
準備し、その後、新たに露出された露出表面の所定位置
に薄膜又は厚膜により所定回路を形成したことを特徴と
する。The method of manufacturing an AlN wiring substrate according to the second invention is as follows: (A) In the AlN sintered body with a protective layer after firing manufactured by the manufacturing method according to the first aspect, the AlN sintered body is formed on the outermost surface thereof. After firing, the protective layer is polished and removed, or (B)
In the case of an AlN sintered body from which the protective layer has been removed after firing, it is prepared and then a predetermined circuit is formed by a thin film or a thick film at a predetermined position on a newly exposed exposed surface.
【０００７】上記「ＡｌＮ焼結体」は、所定のＡｌＮグ
リーンシート体を焼成して製造される。そして、この焼
結体に備えられる上記「配線部」は、パターン配線部及
び上下導通配線部（ビア導体部）を意味し、また表面側
及び内側に位置するものも含む。そして、通常は、この
両者ともに、同じＷメタライズで構成されるが、これに
限らず、少なくとも表面側に位置する配線部（配線パタ
ーン部、上下導通配線部を問わない。）がこのＷメタラ
イズから構成されていればよい。即ち、最も表面側に位
置しない（即ち内部側に位置する）配線部は、Ｗ以外の
メタライズで構成されていてもよい。ホウ化されるＷ
は、表面側に位置するものに限られるからである。The above-mentioned “AlN sintered body” is manufactured by firing a predetermined AlN green sheet body. The "wiring portion" provided in the sintered body means a pattern wiring portion and an upper / lower conductive wiring portion (via conductor portion), and includes those located on the surface side and inside. Normally, both are formed by the same W metallization, but the present invention is not limited to this, and at least the wiring portion (irrespective of the wiring pattern portion and the upper and lower conductive wiring portion) located on the front surface side is subjected to the W metallization. What is necessary is just to be comprised. That is, the wiring portion that is not located on the outermost side (that is, located on the inner side) may be configured by metallization other than W. W to be borated
Is limited to those located on the surface side.
【０００８】また、上記「ＡｌＮグリーンシート体」
は、通常、表面に配線パターンが形成されたシートを積
層した積層体を用いるが、これに限らず、単層であって
もよい。この単層の場合には上下導通配線は具備しない
こととなる。そして、このグリーンシート積層体は、Ａ
ｌＮグリーンシートにスルーホールの形成、このスルー
ホールへのＷインクの穴埋め（ビア形成）、配線パター
ンの印刷、各層シートの積層によって作製される。この
グリーンシートは、ＡｌＮ粉末及び酸化イットリウム、
酸化カルシウム等各種焼結助剤、更に着色剤、有機バイ
ンダ等の組成物からなる。また、この穴埋め用メタライ
ズインク、配線用メタライズインクは、通常、Ｗ粉末及
び有機バインダからなる。尚、この場合、Ｗの焼結性を
上げるため、又は焼結後のＷ粒間の隙間を埋める目的
で、Ｔｉ、Ｍｏ、Ｃｒ等の金属若しくは金属化合物、又
はセラミック成分、例えばＡｌＮグリーンシートに用い
るものと同じ成分（ＡｌＮ；６重量部（Ｗ１００重量部
に対する量）、Ｙ2 Ｏ3 ；０．３重量部等）を添加する
こともできる。Further, the above-mentioned “AlN green sheet body”
Usually uses a laminate in which sheets having a wiring pattern formed on the surface are laminated, but the invention is not limited to this, and a single layer may be used. In the case of this single layer, the upper and lower conductive wiring is not provided. And this green sheet laminate is A
It is produced by forming a through hole in the 1N green sheet, filling the through hole with W ink (forming a via), printing a wiring pattern, and laminating each layer sheet. This green sheet is made of AlN powder and yttrium oxide,
It is composed of various sintering aids such as calcium oxide, a colorant, and a composition such as an organic binder. The metallizing ink for filling holes and the metallizing ink for wiring usually consist of W powder and an organic binder. In this case, in order to increase the sinterability of W or to fill gaps between W grains after sintering, a metal or a metal compound such as Ti, Mo, or Cr, or a ceramic component such as an AlN green sheet is used. The same components as those used (AlN; 6 parts by weight (based on 100 parts by weight of W), Y 2 O 3 ; 0.3 parts by weight, etc.) can also be added.
【０００９】上記「焼成前保護層」は、焼成される前の
保護層であり、焼成後の基板部（例えば、図１の１１ａ
〜ｃ）を構成することとなる配線グリーンシートの積層
体の両表面に積層されるものであり、通常、バインダが
含まれて、後で脱脂及び本焼成される。また、上記「焼
成後保護層」は、焼成により形成され、バインダ等が除
去された強固なものである。これらの保護層は、ＡｌＮ
層若しくはＷ層の単層でもよいし、ＡｌＮ層及びＷ層の
積層でもよい。更に、この保護層の焼成後の厚さは０．
０８ｍｍ以上である。これが０．０８ｍｍ未満では、配
線部のＷがホウ化されて導通抵抗が高くなるからであ
る。The "pre-firing protective layer" is a protective layer before firing, and is a substrate portion after firing (for example, 11a in FIG. 1).
To (c) are laminated on both surfaces of the laminate of the wiring green sheets, and usually contain a binder and are subsequently degreased and baked. Further, the above-mentioned "protective layer after firing" is formed by firing, and is a solid material from which binders and the like have been removed. These protective layers are made of AlN
Or a single layer of a W layer, or a stacked layer of an AlN layer and a W layer. Further, the thickness of this protective layer after firing is 0.1 mm.
08 mm or more. If the thickness is less than 0.08 mm, W in the wiring portion is borated and the conduction resistance increases.
【００１０】本焼結体は、通常、所定のグリーンシート
体を脱脂し、その後、これをＢＮ製容器内に納めて非酸
化性雰囲気（窒素雰囲気）で１６５０℃〜１９００℃の
範囲で焼成して製造される。また、焼成後保護層付のＡ
ｌＮ焼結体では、その最表面に形成された焼成後保護層
を研磨して除去し、保護層を備えないＡｌＮ焼結体を製
造する。更に、この焼結体の新たに露出された露出表面
の所定位置に（通常、上下導通配線の露出面上に）、薄
膜又は厚膜により所定回路を形成して、ＡｌＮ配線基板
を製造する。This sintered body is usually degreased from a predetermined green sheet body, and then placed in a BN container and fired in a non-oxidizing atmosphere (nitrogen atmosphere) at 1650 ° C. to 1900 ° C. Manufactured. In addition, after firing, A
In the 1N sintered body, the post-firing protective layer formed on the outermost surface is polished and removed to produce an AlN sintered body without the protective layer. Further, a predetermined circuit is formed by a thin film or a thick film at a predetermined position on the newly exposed surface of the sintered body (usually on the exposed surface of the vertical conductive wiring), and an AlN wiring substrate is manufactured.
【００１１】[0011]
【作用】本発明では、ＢＮ製容器を用いて被焼成体を焼
成するので、この焼成時には、この容器からホウ素が揮
発する。従って、最表面に保護層がない被焼成体を用い
て焼成する場合は、被焼成体の表面Ｗや表層近辺の内部
Ｗが、揮散してきたホウ素と反応して、ホウ化タングス
テン（Ｗ2 Ｂ又はＷＢ）を形成する。このホウ化タング
ステンの体積抵抗値は、約４０×１０-8μΩ・ｍであ
り、Ｗ（約５×１０-8μΩ・ｍ）の約８倍と極めて大き
い。従って、この従来の場合では著しく導通抵抗が高く
なる。In the present invention, since the object to be fired is fired using a BN container, boron is volatilized from this container during the firing. Therefore, when baking is performed using a fired object having no protective layer on the outermost surface, the surface W of the fired object and the internal W near the surface layer react with the volatilized boron to form tungsten boride (W 2 B). Or WB). The volume resistance value of this tungsten boride is about 40 × 10 −8 μΩ · m, which is about 8 times as large as W (about 5 × 10 −8 μΩ · m). Therefore, in this conventional case, the conduction resistance is significantly increased.
【００１２】一方、本発明では、ＡｌＮ又はＷからなる
保護層が最表面に設けられているので、焼成時における
ホウ素の遮蔽効果があり、配線部を構成するＷのホウ化
が阻止される。そして、保護層付焼結体の該保護層を研
磨加工により除去し、これに所定の回路を形成すれば、
導通抵抗が増加しないＡｌＮ配線基板を製造できる。On the other hand, in the present invention, since the protective layer made of AlN or W is provided on the outermost surface, there is an effect of shielding boron at the time of sintering, and the boriding of W constituting the wiring portion is prevented. Then, if the protective layer of the sintered body with the protective layer is removed by polishing, and a predetermined circuit is formed thereon,
An AlN wiring board with no increase in conduction resistance can be manufactured.
【００１３】[0013]
【実施例】以下、実施例及び比較例により本発明を詳細
に説明する。 （１）焼結体の製造及びＷのホウ化の有無 実施例１ 本実施例は、０．２４ｍｍのＡｌＮ製焼成後保護層を形
成したものである。まず、厚み０．３ｍｍのＡｌＮグリ
ーンシート（ＡｌＮ粉末９４．５重量部、Ｙ2 Ｏ3 粉末
５重量部、ＴｉＯ2 粉末０．５重量部からなる。）に
０．２５ｍｍφのビアホールをあけ、この中にビア用イ
ンクを封入する。このインクは、Ｗ粉末１００重量部、
ＡｌＮ粉末６重量部及び有機バインダ（エチルセルロー
ス）４重量部からなる。その後、このグリーンシート表
面にスクリーン印刷によってＷ製パターン配線を施す。
この配線用インクは、Ｗ粉末１００重量部、ＡｌＮ粉末
６重量部及び有機バインダ（エチルセルロース）３重量
部からなる。The present invention will be described in detail below with reference to examples and comparative examples. (1) Production of Sintered Body and Presence or Absence of Boration of W Example 1 In this example, a protective layer was formed after firing of 0.24 mm AlN. First, a 0.25 mmφ via hole was made in a 0.3 mm thick AlN green sheet (composed of 94.5 parts by weight of AlN powder, 5 parts by weight of Y 2 O 3 powder, and 0.5 parts by weight of TiO 2 powder). Enclose via ink inside. This ink contains 100 parts by weight of W powder,
It consists of 6 parts by weight of AlN powder and 4 parts by weight of an organic binder (ethyl cellulose). After that, W pattern wiring is formed on the surface of the green sheet by screen printing.
This wiring ink is composed of 100 parts by weight of W powder, 6 parts by weight of AlN powder, and 3 parts by weight of an organic binder (ethyl cellulose).
【００１４】そして、上記配線グリーンシートの３枚を
３層に重ね、更にこの３層をはさむように上下に、保護
層となる厚み０．３ｍｍのＡｌＮ製保護シートを計５層
になるように積層する。これを所定の大きさに切断し試
験片（５層積層体）とする。この各試験片を脱脂した
（水素フォーミングガス中、８００℃、１２時間）後、
ＢＮ製容器に納め、窒素雰囲気下１７５０℃、６時間で
焼成を行って、保護層付焼結体を製造した。この焼結体
１は、図１に示すように、３層のＡｌＮ製基板部１１ａ
〜ｃと、この基板部内に形成されたパターン配線部（長
さ１０ｍｍ×幅１ｍｍ×厚さ５μｍ）１２及び上下導通
配線部（０．２ｍｍφ×０．５ｍｍ）１３からなる配線
部と、上下の最表面に形成されているＡｌＮ製保護層１
４ａ、１４ｂと、が一体的に形成された構成をしてい
る。この焼成後保護層１４ａ、１４ｂの厚みは、０．２
４ｍｍであった。Then, three of the above-mentioned wiring green sheets are laminated on three layers, and furthermore, a 0.3 mm-thick AlN protective sheet serving as a protective layer is sandwiched between the three layers so that a total of five layers are formed. Laminate. This is cut into a predetermined size to obtain a test piece (five-layer laminate). After degreasing each test piece (in hydrogen forming gas, at 800 ° C. for 12 hours),
It was placed in a BN container and baked at 1750 ° C. for 6 hours under a nitrogen atmosphere to produce a sintered body with a protective layer. As shown in FIG. 1, this sintered body 1 has a three-layer AlN substrate portion 11a.
And a wiring portion formed of a pattern wiring portion (length 10 mm × width 1 mm × thickness 5 μm) 12 and an upper / lower conductive wiring portion (0.2 mmφ × 0.5 mm) 13 formed in the substrate portion; AlN protective layer 1 formed on the outermost surface
4a and 14b are integrally formed. The thickness of the protective layers 14a and 14b after firing is 0.2
4 mm.
【００１５】この焼結体の断面でビア導体部及びパター
ン配線部の各最表面部について、Ｗのホウ化の有無を、
Ｘ線回折分析で確認したところ、いずれの部分ともにホ
ウ化されていなかった。尚、このビア導体部の最表面部
のＸ線回折の結果を図３に示す。図中、全てのピークは
Ｗピークを示す。In the cross section of the sintered body, whether or not W is borated is determined for each outermost surface portion of the via conductor portion and the pattern wiring portion.
As confirmed by X-ray diffraction analysis, none of the portions was borated. FIG. 3 shows the result of X-ray diffraction of the outermost surface of the via conductor. In the figure, all peaks indicate W peaks.
【００１６】実施例２ 本実施例は、焼成前のＡｌＮ製保護シートの厚さが０．
１２ｍｍ、焼成後保護層の厚さが０．１０ｍｍであるこ
と以外は、実施例１と同じである。本焼結体の断面でビ
ア導体部及びパターン配線部のＷのホウ化の有無を同様
に確認したところ、図示しないが、実施例１と同様にホ
ウ化されていなかった。Example 2 In this example, the thickness of the protective sheet made of AlN before firing was 0.1 mm.
It is the same as Example 1 except that the thickness of the protective layer after firing is 12 mm and the thickness of the protective layer is 0.10 mm. When the presence or absence of boriding of the W in the via conductor portion and the pattern wiring portion was similarly confirmed on the cross section of the sintered body, it was not illustrated, but was not borrowed as in Example 1.
【００１７】実施例３ 本実施例は、ＡｌＮ製保護層の代わりにＷ製保護層を
用いたこと、実施例１で用いた配線用インクの重ね塗
り等により、０．１２ｍｍ厚さの焼成前保護層厚さと
し、焼成後の保護層厚さが０．１０ｍｍであること以外
は、実施例１と同じである。本焼結体の断面で導体ビア
部及びパターン配線部のＷのホウ化の有無を同様に確認
したところ、図示しないが、実施例１と同様にホウ化さ
れていなかった。Embodiment 3 In this embodiment, a 0.12 mm-thick baking was performed by using a W protection layer in place of the AlN protection layer and by repeatedly applying the wiring ink used in the first embodiment. It is the same as Example 1 except that the thickness of the protective layer is 0.10 mm after firing. When the presence or absence of borization of W in the conductor via portion and the pattern wiring portion was similarly confirmed on the cross section of the present sintered body, it was not illustrated, but was not borrowed as in Example 1.
【００１８】実施例４ 本実施例は、ＡｌＮ製保護層単層の代わりにＷ製保護
層（下層）とＡｌＮ製保護層（最上層）との２層構造の
保護層を用いたこと、焼成前のＷ製保護層の厚さが
０．０２５ｍｍ、同ＡｌＮ保護層の厚さが０．１０ｍ
ｍ、焼成後保護層の厚さが各々０．０２ｍｍ、０．０８
ｍｍで計０．１０ｍｍであること以外は、実施例１と同
じである。本焼結体の断面で導体ビア部及びパターン配
線部のＷのホウ化の有無を同様に確認したところ、図示
しないが、実施例１と同様にホウ化されていなかった。Embodiment 4 In this embodiment, a protective layer having a two-layer structure of a W protective layer (lower layer) and an AlN protective layer (top layer) was used instead of a single AlN protective layer. The thickness of the W protective layer is 0.025 mm, and the thickness of the AlN protective layer is 0.10 m.
m, the thickness of the protective layer after firing is 0.02 mm and 0.08, respectively.
It is the same as Example 1 except that the total is 0.10 mm in mm. When the presence or absence of borization of W in the conductor via portion and the pattern wiring portion was similarly confirmed on the cross section of the present sintered body, it was not illustrated, but was not borrowed as in Example 1.
【００１９】比較例１ 本比較例は、ＡｌＮ製保護シート（ひいては焼成後の保
護層）を有しないこと以外は、実施例１と同じである。
本焼結体の表面及び断面で配線部及びビア部のＷのホウ
化の有無を同様に確認したところ、図４に示すように、
表面配線部のＷ部分は完全にホウ化されてＷ2Ｂ（一部
ＷＢ）となっていた。図中、×印はＷ2 Ｂピーク、△印
はＷＢピークを示す。また、図示しないが、ビア導体部
も表層付近は完全にホウ化されていた。Comparative Example 1 This comparative example is the same as Example 1 except that it did not have a protective sheet made of AlN (and thus a protective layer after firing).
When the presence or absence of boriding of W in the wiring portion and the via portion was similarly confirmed on the surface and the cross section of the present sintered body, as shown in FIG.
The W portion of the surface wiring portion was completely borated to W 2 B (partially WB). In the figure, the symbol x indicates the W 2 B peak, and the symbol Δ indicates the WB peak. Although not shown, the via conductor was also completely borated in the vicinity of the surface layer.
【００２０】比較例２ 本比較例は、焼成前のＡｌＮ製保護シートの厚さが０．
０５ｍｍ、焼成後保護層の厚さが０．０４ｍｍと薄くし
たこと以外は、実施例１と同じである。本焼結体の断面
でビア導体部及びパターン配線部のＷのホウ化の有無を
同様に確認したところ、図示しないが、表層に近いビア
部のＷはホウ化されていた。しかし、内部配線部のＷは
ホウ化されていなかった。Comparative Example 2 In this comparative example, the thickness of the protective sheet made of AlN before firing was 0.1 mm.
It is the same as Example 1 except that the thickness of the protective layer after firing was reduced to 0.04 mm. When the presence or absence of boring of W in the via conductor portion and the pattern wiring portion was similarly confirmed in the cross section of the sintered body, although not shown, W in the via portion near the surface layer was borated. However, W in the internal wiring portion was not borated.
【００２１】比較例３ 本比較例は、焼成前のＷ製保護層の厚さが０．０８ｍ
ｍ、焼成後保護層の厚さが０．０６ｍｍと薄くしたこと
以外は、実施例３と同じである。本焼結体の断面でビア
導体部及びパターン配線部のＷのホウ化の有無を同様に
確認したところ、図示しないが、表層に近いビア部（表
層から０．１ｍｍに位置する部分）のＷはホウ化されて
いた。しかし、内部配線部（表層から０．２ｍｍに位置
する部分）のＷはホウ化されていなかった。Comparative Example 3 In this comparative example, the thickness of the W protective layer before firing was 0.08 m.
m, the same as Example 3 except that the thickness of the protective layer after firing was reduced to 0.06 mm. When the presence or absence of boriding of the via conductor portion and the pattern wiring portion was similarly confirmed in the cross section of the sintered body, although not shown, the W of the via portion close to the surface layer (the portion located 0.1 mm from the surface layer) was not shown. Had been borated. However, W in the internal wiring portion (the portion located 0.2 mm from the surface layer) was not borated.
【００２２】（２）抵抗値の測定 上記実施例１〜４及び比較例２〜３で製造した各焼結体
の各保護層の厚み分を研磨して除去し、ビア導体部端面
を表面に露出させ、そのビア導体部端面上にスパッタ法
により薄膜パッド４を形成して、図２に示すような配線
基板２を製造した。この図中、３は保護層を除去した後
の焼結体を示す。この各配線基板の内部配線の抵抗値を
測定し、その結果を表１に示す。但し、比較例１につい
ては、保護層を有しないので、表面研磨をせずにそのま
ま配線抵抗を測定した。尚、各試験片の焼成前及び焼成
後の保護層の厚さも、表１に併記した。(2) Measurement of Resistance The thickness of each protective layer of each of the sintered bodies produced in Examples 1 to 4 and Comparative Examples 2 to 3 was removed by polishing, and the end surface of the via conductor was exposed on the surface. The thin film pad 4 was formed on the end surface of the via conductor portion by a sputtering method on the end surface of the via conductor portion, thereby manufacturing a wiring board 2 as shown in FIG. In this figure, reference numeral 3 denotes a sintered body after removing the protective layer. The resistance value of the internal wiring of each wiring board was measured, and the results are shown in Table 1. However, in Comparative Example 1, since no protective layer was provided, the wiring resistance was measured without polishing the surface. Table 1 also shows the thickness of the protective layer before and after firing of each test piece.
【００２３】[0023]
【表１】 [Table 1]
【００２４】（３）実施例の効果 比較例１のように保護層を有しない場合では、抵抗値が
１０００ｍΩと極めて大きく、Ｗがホウ素と反応してい
ることが判る。更に、比較例２及び３に示すように、保
護層の厚さが各々０．０４ｍｍ、０．０６ｍｍと薄い場
合も、Ｗが反応していることが判る。一方、実施例１〜
３に示すように、保護層の厚さが０．１０〜０．２４ｍ
ｍの場合は、いずれも抵抗値が２００ｍΩと小さく、こ
の保護層下のＷはホウ素と反応していないことが判る。
尚、本発明においては、前記具体的実施例に示すものに
限られず、目的、用途に応じて本発明の範囲内で種々変
更した実施例とすることができる。(3) Effect of Example When no protective layer is provided as in Comparative Example 1, the resistance value is as large as 1000 mΩ, which indicates that W reacts with boron. Further, as shown in Comparative Examples 2 and 3, when the thicknesses of the protective layers are as thin as 0.04 mm and 0.06 mm, respectively, it can be seen that W reacts. On the other hand, Examples 1 to
As shown in FIG. 3, the protective layer has a thickness of 0.10 to 0.24 m.
In the case of m, the resistance value was as small as 200 mΩ, and it was found that W under this protective layer did not react with boron.
It should be noted that the present invention is not limited to the specific embodiments described above, but can be variously modified within the scope of the present invention according to the purpose and application.
【００２５】[0025]
【発明の効果】本発明の製造方法によれば、焼成時には
ＡｌＮ又はＷからなる保護層が最表面に設けられている
ので、焼成時に揮散してくるホウ素とＷメタライズとの
反応が阻止され、そのため導通抵抗が増大しないＡｌＮ
焼結体及びＡｌＮ配線基板を製造できる。また、ＢＮ製
容器内で焼成することができるので、より大型な基板の
焼成も可能であり、また安価な焼成方法、製造方法とす
ることができる。According to the production method of the present invention, since the protective layer made of AlN or W is provided on the outermost surface during firing, the reaction between boron volatilized during firing and W metallization is prevented, AlN that does not increase conduction resistance
A sintered body and an AlN wiring board can be manufactured. In addition, since firing can be performed in a BN container, a larger substrate can be fired, and an inexpensive firing method and manufacturing method can be achieved.
【図１】実施例１において製造された保護層付ＡｌＮ焼
結体の一部説明断面図である。FIG. 1 is a partial explanatory cross-sectional view of an AlN sintered body with a protective layer manufactured in Example 1.
【図２】実施例１において製造されたＡｌＮ配線基板の
一部説明断面図である。FIG. 2 is a partial explanatory cross-sectional view of the AlN wiring board manufactured in Example 1.
【図３】実施例１において製造された保護層付ＡｌＮ焼
結体のＷメタライズのうちのビア導体部の最表面部のＸ
線回折の結果を示すグラフである。FIG. 3 shows X of the outermost surface portion of the via conductor portion in the W metallization of the AlN sintered body with the protective layer manufactured in Example 1.
It is a graph which shows the result of a line diffraction.
【図４】比較例１において製造されたＡｌＮ焼結体のＷ
メタライズのうちの表面配線部のＸ線回折の結果を示す
グラフである。FIG. 4 shows W of the AlN sintered body manufactured in Comparative Example 1.
6 is a graph showing a result of X-ray diffraction of a surface wiring part in metallization.
１；保護層付ＡｌＮ焼結体、１１ａ、１１ｂ、１１ｃ；
基板部、１２；パターン配線部、１３；上下導通配線
部、１４ａ、１４ｂ；保護層、２；ＡｌＮ配線基板、
３；保護層を除去した後の焼結体、４；薄膜パッド。1: AlN sintered body with protective layer, 11a, 11b, 11c;
Substrate part, 12; pattern wiring part, 13; vertical conductive wiring part, 14a, 14b; protective layer, 2: AlN wiring substrate,
3; sintered body after removing the protective layer; 4; thin film pad.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 41/80 - 41/91 Continuation of front page (58) Field surveyed (Int.Cl. 7 , DB name) C04B 41/80-41/91
Claims (2)
くとも表面側に位置する配線部がタングステンメタライ
ズからなる窒化アルミニウム焼結体を、所定の窒化アル
ミニウムグリーンシート体の焼成により、製造する方法
であって、 上記窒化アルミニウムグリーンシート体の最表面に、窒
化アルミニウム層、タングステン層、又は窒化アルミニ
ウム層及びタングステン層の積層からなり且つ焼成後の
厚さが０．０８ｍｍ以上となる厚さの焼成前保護層を設
け、その後、窒化ホウ素製容器を用いて焼成を行い、更
に、必要に応じて焼成後保護層を研磨して除去すること
を特徴とする窒化アルミニウム焼結体の製造方法。1. An aluminum nitride sintered body having a wiring portion and having a wiring portion located at least on the surface side of the wiring portion made of tungsten metallized metal is manufactured by firing a predetermined aluminum nitride green sheet body. A method comprising the steps of: forming an aluminum nitride layer, a tungsten layer, or a laminate of an aluminum nitride layer and a tungsten layer on the outermost surface of the aluminum nitride green sheet body, wherein the thickness after firing is 0.08 mm or more. A method for producing an aluminum nitride sintered body, comprising: providing a protective layer before firing, thereafter performing firing using a container made of boron nitride, and, if necessary, polishing and removing the protective layer after firing.
された窒化アルミニウム焼結体の最表面に形成された焼
成後保護層を研磨して除去し、又は、焼成後保護層が除
去された窒化アルミニウム焼結体の場合はそれを準備
し、その後、新たに露出された露出表面の所定位置に薄
膜又は厚膜により所定回路を形成したことを特徴とする
窒化アルミニウム配線基板の製造方法。2. The post-firing protective layer formed on the outermost surface of the aluminum nitride sintered body produced by the production method according to claim 1 is removed by polishing, or the post-firing protective layer is removed. A method for manufacturing an aluminum nitride wiring board, comprising preparing an aluminum nitride sintered body, and thereafter forming a predetermined circuit by a thin film or a thick film at a predetermined position on a newly exposed exposed surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02371493A JP3230877B2 (en) | 1993-01-18 | 1993-01-18 | Method for manufacturing aluminum nitride sintered body and method for manufacturing aluminum nitride wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02371493A JP3230877B2 (en) | 1993-01-18 | 1993-01-18 | Method for manufacturing aluminum nitride sintered body and method for manufacturing aluminum nitride wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06211586A JPH06211586A (en) | 1994-08-02 |
| JP3230877B2 true JP3230877B2 (en) | 2001-11-19 |
Family
ID=12118009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02371493A Expired - Fee Related JP3230877B2 (en) | 1993-01-18 | 1993-01-18 | Method for manufacturing aluminum nitride sintered body and method for manufacturing aluminum nitride wiring board |
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| Country | Link |
|---|---|
| JP (1) | JP3230877B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1509071A4 (en) * | 2002-05-28 | 2008-12-31 | Sumitomo Electric Industries | Aluminum nitride sintered compact having metallized layer and method for preparation thereof |
| JP2019033224A (en) * | 2017-08-09 | 2019-02-28 | 日本特殊陶業株式会社 | Manufacturing method for ceramic board |
-
1993
- 1993-01-18 JP JP02371493A patent/JP3230877B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06211586A (en) | 1994-08-02 |
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