JP3221006B2 - Superconducting light element - Google Patents
Superconducting light elementInfo
- Publication number
- JP3221006B2 JP3221006B2 JP20074991A JP20074991A JP3221006B2 JP 3221006 B2 JP3221006 B2 JP 3221006B2 JP 20074991 A JP20074991 A JP 20074991A JP 20074991 A JP20074991 A JP 20074991A JP 3221006 B2 JP3221006 B2 JP 3221006B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- waveguide
- substrate
- superconductor
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【０００１】[0001]
【産業上の利用分野】本発明は集積化に適した超伝導光
素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting optical device suitable for integration.
【０００２】[0002]
【従来の技術】従来の超伝導光素子は特開昭６１ー３５
５７４、西野他 オプトロニクス Ｎｏ．１１ ｐ１０６
（１９８７）に述べられているように超伝導受光素子に
ファイバーにより光（電磁波）を誘導し照射する構成と
なっている。2. Description of the Related Art A conventional superconducting optical element is disclosed in Japanese Unexamined Patent Publication No. 61-35.
574, Nishino et al. 11 p106
As described in (1987), light (electromagnetic waves) is guided to a superconducting light receiving element by a fiber and irradiated.
【０００３】[0003]
【発明が解決しようとする課題】現在高速演算システ
ム、高速高密度通信に光コンピューター等光を利用した
システムが検討されているが応用ではこれらはそれ自体
で存在するのは不可能であり超伝導体素子や半導体素子
と融合し各々の欠点を補う必要がある。その場合如何に
光信号を電気信号に効率よく変換するかと如何にコンパ
クトに収めるかがポイントである。しかし従来の様に光
ファイバーにより光を誘導する方法の場合は一目瞭然の
様に上記ポイントを満たすのに必要不可欠である集積化
が出来なかった。At present, high-speed arithmetic systems and systems using light such as optical computers for high-speed and high-density communication are being studied. However, in applications, these cannot exist by themselves, and superconductivity is not possible. It is necessary to integrate with the body element and the semiconductor element to make up for each disadvantage. In that case, the point is how to efficiently convert an optical signal into an electric signal and how to fit it compactly. However, in the case of the conventional method in which light is guided by an optical fiber, integration, which is indispensable to satisfy the above points, cannot be realized at a glance.
【０００４】本発明は掛かる問題を除去するものであり
集積化の可能な超伝導光素子を容易に且つ低コストで得
んとするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above problem, and it is an object of the present invention to provide a superconducting optical device which can be integrated easily and at low cost.
【０００５】[0005]
【課題を解決するための手段】本発明の超伝導光素子
は、ＬｉＮｂＯ３からなる基板の一方の面に、酸化物超
伝導体からなる一対の電極と、電磁波を伝送可能な導波
路と、を備えた超伝導光素子であって、前記一対の電極
は各々の電極が前記導波路に接し、互いに対向して形成
されてなり、前記導波路が、前記基板にＴｉを拡散して
形成されてなり、前記基板の他方の面上に超伝導体のゲ
ート電極を備えたことを特徴とする。The superconducting optical device according to the present invention comprises a substrate made of LiNbO3 and one surface of which is made of an oxide superconducting material.
A pair of electrodes consisting of conductor, a waveguide capable of transmitting electromagnetic waves, a superconducting optical device having a pair of electrodes each electrode is in contact with the waveguide, it is formed to face each other Wherein the waveguide diffuses Ti into the substrate
Formed on the other surface of the substrate.
And a gate electrode .
【０００６】[0006]
【実施例】以下本発明を実施例に従い詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to embodiments.
【０００７】（実施例１）図１と図２は実施例１の超伝
導光素子の断面図と平面図である。(Embodiment 1) FIGS. 1 and 2 are a sectional view and a plan view, respectively, of a superconducting optical element according to Embodiment 1. FIG.
【０００８】基板１はＬｉＮｂＯ3の単結晶（Ｙ−ｃｕ
ｔ）であり研磨を施した表面部にはＴｉを拡散した導波
路２が形成されている。上記基板１上に導波路２に接し
互いに対向する厚さ１００ｎｍの超伝導電極３及び４を
形成する。超伝導電極３、４はＹＢａ2Ｃｕ3Ｏ7ーX超伝
導体であり活性化酸素を供給できるＥＣＲ（電子サイク
ロトロン共鳴）ラジカルビームガンを備えたＭＢＥ（Ｍ
ｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ）装置に
より成膜した後塩素ガスを用いた反応性プラズマエッチ
ングにより加工し形成した。超伝導電極３、４間の距離
は＜０．１５μｍである。次に超伝導電極部３、４を部
分マスキングした後ＳｉＯ2膜を３００ｎｍ成膜し本発
明の超伝導光素子を得た。The substrate 1 is made of a single crystal of LiNbO 3 (Y-cu
The waveguide 2 in which Ti is diffused is formed on the polished surface portion as t). On the substrate 1 are formed superconducting electrodes 3 and 4 having a thickness of 100 nm which are in contact with the waveguide 2 and face each other. The superconducting electrodes 3 and 4 are YBa 2 Cu 3 O 7 -X superconductors and are provided with an ECR (Electron Cyclotron Resonance) radical beam gun capable of supplying activated oxygen.
The film was formed by a reactive beam etching using a chlorine gas after forming a film by using a molecular beam epitaxy apparatus. The distance between the superconducting electrodes 3, 4 is <0.15 μm. Next, after the superconducting electrode portions 3 and 4 were partially masked, an SiO 2 film was formed to a thickness of 300 nm to obtain a superconducting optical device of the present invention.
【０００９】ここでＬｉＮｂＯ3基板を用いた理由は
成膜に於て臨界温度が高く幅広い応用が期待される酸化
物超伝導体との反応が少なく且つエピタキシャル膜を得
られる。The reason why the LiNbO 3 substrate is used is that a critical temperature in film formation is high and there is little reaction with an oxide superconductor which is expected to be applied widely, and an epitaxial film can be obtained.
【００１０】導波路はＴｉの拡散により容易にパター
ン化出来るため集積化が容易。Since the waveguide can be easily patterned by diffusion of Ti, integration is easy.
【００１１】大型で均質な基板が得られる。A large and uniform substrate can be obtained.
【００１２】導波路損失及びその波長依存性が小さ
い。The waveguide loss and its wavelength dependence are small.
【００１３】光電効果が大きい。The photoelectric effect is large.
【００１４】ためである。但し電圧を印加すると導波路
内の光が変調されることを考慮しなくてはならない。This is because. However, consideration must be given to the fact that when a voltage is applied, light in the waveguide is modulated.
【００１５】得られた超伝導光素子の導波路２に光を伝
送させ電極間のＩ−Ｖ特性を測定した。測定温度は６０
Ｋである。結果を図３に示す。図中の２つのパターンの
違いは光伝送の有無によるものであるが顕著にスイッチ
ングが行なわれていることが判る。尚光伝送によりＯＮ
状態にするかＯＦＦ状態にするかは超伝導体のエネルギ
ーギャップ、導波路の材質、導波路内の不純物、電磁波
の波長と強度により調整が可能である。そのスイッチの
メカニズムは電磁波の伝送よる導波路内のキャリヤ密度
の変化またはクーパー対の破壊（ｈν＞２Δ）の２種類
に大別できる。 （実施例２）実施例１では２端子素子で本発明を説明し
たがここでは増幅機能を有する３端子素子について説明
する。Light was transmitted to the waveguide 2 of the obtained superconducting optical element, and the IV characteristics between the electrodes were measured. Measurement temperature is 60
K. The results are shown in FIG. The difference between the two patterns in the figure depends on the presence or absence of optical transmission, but it can be seen that the switching is remarkably performed. ON by optical transmission
Whether the state is set to the state or the OFF state can be adjusted by the energy gap of the superconductor, the material of the waveguide, the impurities in the waveguide, the wavelength and the intensity of the electromagnetic wave. The mechanism of the switch can be roughly classified into two types: a change in the carrier density in the waveguide due to the transmission of the electromagnetic wave or a destruction of the Cooper pair (hν> 2Δ). (Embodiment 2) In the first embodiment, the present invention has been described using a two-terminal element, but here, a three-terminal element having an amplifying function will be described.
【００１６】図４は実施例２の超伝導光素子の断面図で
ある。実施例１と同様にＬｉＮｂＯ3単結晶（Ｙ−ｃｕ
ｔ）基板１ｂ上に導波路２ｂに接し互いに対向する厚さ
１００ｎｍの超伝導電極３ｂ及び４ｂを形成更に超伝導
電極３ｂ、４ｂの一部を除きＳｉＯ2膜を３００ｎｍ形
成している。また基板１ｂの裏面にはＹＢａ2Ｃｕ3Ｏ
7ーX超伝導体よりなるゲート電極５ｂを形成している。
得られた超伝導光素子のゲート電極に電圧を−３Ｖ印加
し導波路２ｂに光を伝送したところ図５に示すように光
素子として動作することを確認した。３端子素子は２端
子素子と比較すると電圧の印加によって導波路２ｂ内の
キャリヤ密度を調整できるため電磁波の検出感度を調整
したりＯＮ、ＯＦＦの差を顕著にすることが出来より使
いやすい超伝導光素子と言える。FIG. 4 is a sectional view of a superconducting optical device according to the second embodiment. As in Example 1, the LiNbO 3 single crystal (Y-cu
t) superconducting electrode 3b and 4b to form further superconducting electrode 3b having a thickness of 100nm, which face each other, against the waveguide 2b on the substrate 1b, it is 300nm form an SiO 2 film except for some 4b. On the back surface of the substrate 1b, YBa 2 Cu 3 O
A gate electrode 5b made of a 7-X superconductor is formed.
When a voltage of -3 V was applied to the gate electrode of the obtained superconducting optical device and light was transmitted to the waveguide 2b, it was confirmed that the device operated as an optical device as shown in FIG. Compared with the two-terminal element, the three-terminal element can adjust the carrier density in the waveguide 2b by applying a voltage, so that it is possible to adjust the detection sensitivity of the electromagnetic wave and make the difference between ON and OFF remarkable, and it is easier to use superconductivity. It can be called an optical element.
【００１７】本実施例では超伝導体に酸化物超伝導体を
用いたがＮｂ、ＮｂＮ、Ｎｂ3Ｓｉ、Ｎｂ3Ｓｎ、Ｎｂ3
Ａｌ等金属系超伝導体を用いても良く、更に導波路は好
ましくはＬｉＮｂＯ3系であるがＬｉＴａＯ3等酸化物や
ＧａＡｓ、ＩｎＰ等半導体導波路を用いても差し支えな
い。In this embodiment, an oxide superconductor is used as the superconductor, but Nb, NbN, Nb 3 Si, Nb 3 Sn, and Nb 3
A metal-based superconductor such as Al may be used, and the waveguide is preferably a LiNbO 3 system, but an oxide such as LiTaO 3 or a semiconductor waveguide such as GaAs or InP may be used.
【００１８】[0018]
【発明の効果】以上説明したように、導波路内を伝達す
る電磁波の有無や強度の変化によって、超伝導体よりな
る一対の電極間に流れる電流が制御され、スイッチング
動作が可能となる。また、光の高速性を活かした光−電
気信号の変換が可能となる。さらに、導波路がＬｉＮｂ
Ｏ3系であることにより、微細なパターニングが可能と
なり、素子の集積化、コンパクト化が容易となる。ま
た、一対の超伝導体よりなる電極の裏に位置する部分に
超伝導体のゲート電極を有することにより、ゲート電極
への電圧の印加によって電磁波の検出感度を調整した
り、また、ＯＮ、ＯＦＦのスイッチングの差を顕著にす
ることができ、より使用しやすい素子となる。As described above, the current flowing between a pair of electrodes made of a superconductor is controlled by the presence / absence and the change of the intensity of the electromagnetic wave transmitted in the waveguide, thereby enabling the switching operation. Further, it is possible to convert an optical signal into an electrical signal by utilizing the high speed of light. Further, when the waveguide is LiNb
By using an O 3 -based material, fine patterning becomes possible, and the integration and compactness of the device are facilitated. In addition, by having a superconductor gate electrode in a portion located behind the electrode composed of a pair of superconductors, the detection sensitivity of electromagnetic waves can be adjusted by applying a voltage to the gate electrode, and ON / OFF can be performed. Can be remarkable, and the device can be more easily used.
【図１】 本発明の実施例１の超伝導光素子断面図。FIG. 1 is a sectional view of a superconducting optical device according to a first embodiment of the present invention.
【図２】 本発明の実施例１の超伝導光素子平面図。FIG. 2 is a plan view of a superconducting optical element according to the first embodiment of the present invention.
【図３】 本発明の実施例１の超伝導光素子のＩ−Ｖ特
性図。FIG. 3 is an IV characteristic diagram of the superconducting optical element according to the first embodiment of the present invention.
【図４】 本発明の実施例２の超伝導光素子断面図。FIG. 4 is a sectional view of a superconducting optical element according to a second embodiment of the present invention.
【図５】 本発明の実施例２の超伝導光素子のＩ−Ｖ特
性図。FIG. 5 is an IV characteristic diagram of the superconducting optical element according to the second embodiment of the present invention.
１、１ｂ：基板 ２、２ｂ：導波路 ３、３ｂ、４、４ｂ：超伝導電極 ５ｂ：ゲート電極 ６：光信号 1, 1b: Substrate 2, 2b: Waveguide 3, 3b, 4, 4b: Superconducting electrode 5b: Gate electrode 6: Optical signal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 下田 達也 長野県諏訪市大和３丁目３番５号セイコ ーエプソン株式会社内 (56)参考文献 特開 平１−150374（ＪＰ，Ａ) 特開 昭63−305570（ＪＰ，Ａ) 特開 平１−239978（ＪＰ，Ａ) 特開 昭61−179586（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 39/22 - 39/24 H01L 39/00 H01L 27/15 G02B 6/12 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tatsuya Shimoda 3-5-5 Yamato, Suwa-shi, Nagano Seiko Epson Corporation (56) References JP-A-1-150374 (JP, A) JP-A-63 -305570 (JP, A) JP-A-1-239978 (JP, A) JP-A-61-179586 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 39/22- 39/24 H01L 39/00 H01L 27/15 G02B 6/12
Claims (1)
に、酸化物超伝導体からなる一対の電極と、電磁波を伝
送可能な導波路と、を備えた超伝導光素子であって、 前記一対の電極は各々の電極が前記導波路に接し、互い
に対向して形成されてなり、前記導波路が、前記基板にＴｉを拡散して形成されてな
り、 前記基板の他方の面上に超伝導体のゲート電極を備えた
ことを特徴とする超伝導光素子。1. A superconducting optical element comprising a pair of electrodes made of an oxide superconductor and a waveguide capable of transmitting electromagnetic waves on one surface of a substrate made of LiNbO3 . The electrodes are formed such that each electrode is in contact with the waveguide and faces each other, and the waveguide is formed by diffusing Ti into the substrate.
Ri, superconducting optical device characterized by comprising a gate electrode of the superconductor on the other surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20074991A JP3221006B2 (en) | 1991-08-09 | 1991-08-09 | Superconducting light element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20074991A JP3221006B2 (en) | 1991-08-09 | 1991-08-09 | Superconducting light element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0548163A JPH0548163A (en) | 1993-02-26 |
| JP3221006B2 true JP3221006B2 (en) | 2001-10-22 |
Family
ID=16429536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20074991A Expired - Fee Related JP3221006B2 (en) | 1991-08-09 | 1991-08-09 | Superconducting light element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3221006B2 (en) |
-
1991
- 1991-08-09 JP JP20074991A patent/JP3221006B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0548163A (en) | 1993-02-26 |
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