JP3216298B2 - Vertical container for compound semiconductor crystal growth - Google Patents
Vertical container for compound semiconductor crystal growthInfo
- Publication number
- JP3216298B2 JP3216298B2 JP02773593A JP2773593A JP3216298B2 JP 3216298 B2 JP3216298 B2 JP 3216298B2 JP 02773593 A JP02773593 A JP 02773593A JP 2773593 A JP2773593 A JP 2773593A JP 3216298 B2 JP3216298 B2 JP 3216298B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- compound semiconductor
- crystal
- vertical
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、垂直ブリッジマン法や
垂直温度勾配凝固法などにより化合物半導体結晶を成長
させる縦型容器及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical container for growing a compound semiconductor crystal by a vertical Bridgman method, a vertical temperature gradient solidification method or the like, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、垂直ブリッジマン法や垂直温度勾
配凝固法などにより化合物半導体結晶を成長する方式に
は、ＰＢＮ製の結晶成長用縦型容器を使用し、種結晶
設置部に特別の対策を施さない方式、種結晶とＰＢＮ
製容器の隙間にＢ2 Ｏ3 を流し込む方式に大別される。2. Description of the Related Art Conventionally, in a method of growing a compound semiconductor crystal by a vertical Bridgman method or a vertical temperature gradient solidification method, a vertical vessel for crystal growth made of PBN is used, and special measures are taken at a seed crystal installation part. Without seeding, seed crystal and PBN
The method is roughly divided into a method in which B 2 O 3 is poured into the gap between the containers.
【０００３】[0003]
【発明が解決しようとする課題】の方式では、容器内
面と種結晶の隙間に、結晶原料が流れ込んで多結晶化す
るという問題がある。図３は、の方式の１例を説明す
るための図であり、ＰＢＮ製容器１の底部に種結晶３を
設置し、Ｂ2 Ｏ3 材５及び化合物半導体結晶原料である
多結晶４を収容し、Ｂ2 Ｏ3 材５を溶融し、不活性ガス
で加圧することにより、溶融Ｂ2 Ｏ3を種結晶とＰＢＮ
製容器の隙間に流し込んだ後、上記多結晶４を溶融し、
下方より結晶化するものである。この方式では、種結晶
と容器の隙間に流し込んだ溶融Ｂ2 Ｏ3 が種結晶設置部
の内面に均一に付着させることが難しく、付着しなかっ
た容器内面に結晶溶融原料が流れ込むと、その部分から
多結晶化するという問題があり、化合物半導体結晶の歩
留りを低下する原因となっていた。In the method of the present invention, there is a problem that the crystal raw material flows into the gap between the inner surface of the container and the seed crystal and is polycrystallized. FIG. 3 is a view for explaining one example of the method, in which a seed crystal 3 is placed at the bottom of a PBN container 1 and a B 2 O 3 material 5 and a polycrystal 4 as a compound semiconductor crystal raw material are accommodated. Then, the B 2 O 3 material 5 is melted and pressurized with an inert gas, so that the molten B 2 O 3 is mixed with a seed crystal and PBN.
After pouring into the gap of the container, the polycrystal 4 is melted,
It crystallizes from below. In this method, it is difficult for the molten B 2 O 3 poured into the gap between the seed crystal and the container to uniformly adhere to the inner surface of the seed crystal installation part. This causes a problem of polycrystallization, which causes a decrease in the yield of the compound semiconductor crystal.
【０００４】そこで、本発明では、垂直ブリッジマン法
や垂直温度勾配凝固法などにおける上記の問題点を解消
し、容器内面からの多結晶化することを防止した化合物
半導体結晶成長用縦型容器及びその製造方法を提供しよ
うとするものである。Accordingly, the present invention solves the above-mentioned problems in the vertical Bridgman method, the vertical temperature gradient solidification method, and the like, and provides a vertical container for growing a compound semiconductor crystal which prevents polycrystallization from the inner surface of the container. It is intended to provide a manufacturing method thereof.
【０００５】[0005]
【課題を解決するための手段】本発明は、種結晶設置部
を底部に備えた化合物半導体結晶成長用縦型容器におい
て、上記容器内面のうち少なくとも種結晶設置部の内面
に、必要に応じて、上記容器内面全体に、上記容器を構
成する元素の少なくとも１種以上を含んだ酸化物層を予
め形成したことを特徴とする化合物半導体結晶成長用縦
型容器である。According to the present invention, there is provided a vertical container for growing a compound semiconductor crystal having a seed crystal installation portion at a bottom portion, wherein at least an inner surface of the seed crystal installation portion among the inner surfaces of the container is provided as necessary. A vertical container for growing a compound semiconductor crystal, characterized in that an oxide layer containing at least one element constituting the container is previously formed on the entire inner surface of the container.
【０００６】本発明で使用される縦型容器は、ＰＢＮ、
Ｓｉなどで構成することができ、容器内面に形成する酸
化物層は、上記の容器の材料に対応してＢ2 Ｏ3 、Ｓｉ
Ｏ2などで構成することができる。また、酸化物層の厚
みは、５０〜２８０μｍの範囲が好ましく、１００〜２
００μｍの範囲がより好ましい。なお、本発明の縦型容
器は、例えば、酸素を含んだ気体中で５００℃以上で酸
化処理することにより酸化物層を形成することができ
る。The vertical container used in the present invention is PBN,
The oxide layer formed on the inner surface of the container may be made of B 2 O 3 , Si according to the material of the container.
It can be composed of O 2 or the like. Further, the thickness of the oxide layer is preferably in the range of 50 to 280 μm, and 100 to 2 μm.
The range of 00 μm is more preferable. The vertical container of the present invention can form an oxide layer by, for example, oxidizing at 500 ° C. or higher in a gas containing oxygen.
【０００７】[0007]
【作用】本発明は、種結晶設置部を底部に備えた化合物
半導体結晶成長用縦型容器内面のうち少なくとも種結晶
設置部の内面に、上記容器を構成する元素の少なくとも
１種以上を含んだ酸化物層を予め形成することにより、
垂直ブリッジマン法や垂直温度勾配凝固法などで種結晶
上部から化合物半導体結晶を成長するときに、種結晶と
容器の隙間に原料融液が流れ込み、容器内面に接触して
多結晶化するという不都合を防止し、結晶性の優れた化
合物半導体結晶の成長を可能にしたものである。According to the present invention, at least one of the elements constituting the above-mentioned container is contained in at least the inner surface of the seed crystal mounting portion among the inner surfaces of the vertical container for growing a compound semiconductor crystal having the seed crystal mounting portion at the bottom. By forming the oxide layer in advance,
When compound semiconductor crystals are grown from the top of the seed crystal by the vertical Bridgman method or the vertical temperature gradient solidification method, the disadvantage that the raw material melt flows into the gap between the seed crystal and the container and comes into contact with the inner surface of the container to cause polycrystallization. To prevent the growth of a compound semiconductor crystal having excellent crystallinity.
【０００８】図１は、本発明の１具体例である化合物半
導体結晶成長用縦型容器の概念図である。図１は、ＰＢ
Ｎ製成長容器１の種結晶設置部内面にＢ2 Ｏ3 層２を予
め形成した容器を使用し、該容器１の底部にＧａＡｓ種
結晶３を設置し、ＧａＡｓ多結晶原料４を収納した状態
を示した図である。この状態で多結晶原料４を溶融し、
ＧａＡｓ種結晶３上面から固化して結晶化するものであ
る。仮に、溶融した多結晶原料４が種結晶３と容器１の
隙間に流れ込んでも、容器１の内面と直接接触すること
がなく、内面からの多結晶化を防止することができる。FIG. 1 is a conceptual view of a vertical container for growing a compound semiconductor crystal according to one embodiment of the present invention. Figure 1 shows the PB
A state in which a B 2 O 3 layer 2 is previously formed on the inner surface of a seed crystal setting portion of an N-made growth container 1, a GaAs seed crystal 3 is set at the bottom of the container 1, and a GaAs polycrystalline raw material 4 is stored. FIG. In this state, the polycrystalline raw material 4 is melted,
The GaAs seed crystal 3 solidifies from the upper surface and crystallizes. Even if the melted polycrystalline raw material 4 flows into the gap between the seed crystal 3 and the container 1, it does not come into direct contact with the inner surface of the container 1, and polycrystallization from the inner surface can be prevented.
【０００９】図２は、本発明の他の具体例である化合物
半導体結晶成長用縦型容器の概念図である。図２は、Ｐ
ＢＮ製成長容器１の内面全体にＢ2 Ｏ3 層２を予め形成
した容器を使用した以外は、図１の容器と同じものであ
る。FIG. 2 is a conceptual view of a vertical container for growing a compound semiconductor crystal according to another embodiment of the present invention. FIG.
It is the same as the container of FIG. 1 except that a container in which the B 2 O 3 layer 2 is formed in advance on the entire inner surface of the BN growth container 1 is used.
【００１０】[0010]
（実施例１）図１のＰＢＮ製縦型成長容器を用いて垂直
ブリッジマン法でＳｉドープＧａＡｓ単結晶を成長させ
た。該成長容器は、種結晶設置部の内径が１２ｍｍ、結
晶成長部の内径が５２ｍｍ、結晶成長部の長さが２００
ｍｍ、容器壁の厚みが２ｍｍのものを使用し、予め、種
結晶設置部内面を酸化して１００〜２００μｍのＢ2Ｏ
3 層を形成した。該成長容器には、＜１００＞成長方位
の種結晶とドーパントＳｉ３０ｍｇ及びＧａＡｓ多結晶
１１００ｇを収容した後、垂直ブリッジマン炉中で昇温
し、まず、ＧａＡｓ多結晶を溶解し種付けし、温度勾配
を１０℃／ｃｍに設定した炉を移動速度５ｍｍ／ｈｒで
移動して約７２時間で単結晶化させた。得られたＳｉド
ープＧａＡｓ単結晶は６５０ｇであり、固化率が０．１
５、キャリア濃度が３×１０17ｃｍ-2、転位密度が１２
００ｃｍ-2の高品質のｎ型単結晶であった。また、同一
条件で１８回成長を実施したが、全て６００〜８００ｇ
の単結晶を得ることができた。(Example 1) A Si-doped GaAs single crystal was grown by the vertical Bridgman method using the vertical growth vessel made of PBN shown in FIG. The growth vessel has an inner diameter of the seed crystal setting portion of 12 mm, an inner diameter of the crystal growth portion of 52 mm, and a length of the crystal growth portion of 200 mm.
mm, the thickness of the container wall using those 2 mm, in advance, 100-200 [mu] m of B 2 O by oxidation of the seed crystal set portion inner surface
Three layers were formed. The growth vessel contains a seed crystal of <100> growth orientation, 30 mg of dopant Si, and 1100 g of GaAs polycrystal, and then heated in a vertical Bridgman furnace to first dissolve and seed the GaAs polycrystal, and then perform a temperature gradient. Was moved at a moving speed of 5 mm / hr in a furnace set at 10 ° C./cm to perform single crystallization in about 72 hours. The obtained Si-doped GaAs single crystal weighed 650 g and had a solidification rate of 0.1.
5. Carrier concentration is 3 × 10 17 cm -2 , dislocation density is 12
It was a high quality n-type single crystal of 00 cm -2 . In addition, growth was performed 18 times under the same conditions, but all were 600 to 800 g.
Was obtained.
【００１１】（実施例２）図１のＰＢＮ製縦型成長容器
を用いて垂直ブリッジマン法でＺｎドープＧａＡｓ単結
晶を成長させた。該成長容器は、種結晶設置部の内径が
２１ｍｍ、結晶成長部の内径が７８ｍｍ、結晶成長部の
長さが３００ｍｍ、容器壁の厚みが１．５ｍｍのものを
使用し、予め、種結晶設置部内面を酸化して１００〜１
５０μｍのＢ2 Ｏ3 層を形成した。該成長容器には、＜
１００＞成長方位の種結晶とドーパントＺｎ２８５０ｍ
ｇ及びＧａＡｓ多結晶１１００ｇを収容した後、垂直ブ
リッジマン炉中で昇温し、まず、ＧａＡｓ多結晶を溶解
し、種付けし、温度勾配を１０℃／ｃｍに設定した炉を
移動速度５ｍｍ／ｈｒで移動して約８１時間で単結晶化
させた。得られたＺｎドープＧａＡｓ単結晶は１９３０
ｇであり、固化率が０．３７、キャリア濃度が１．７×
１０19ｃｍ-2、転位密度が２２７０ｃｍ-2の高品質のｐ
型単結晶であった。また、同一条件で１３回成長を実施
したが、全て１４３０〜２００１ｇの単結晶を得ること
ができた。(Example 2) A Zn-doped GaAs single crystal was grown by the vertical Bridgman method using the vertical growth vessel made of PBN shown in FIG. The growth vessel has a seed crystal setting portion having an inner diameter of 21 mm, a crystal growing portion having an inner diameter of 78 mm, a crystal growing portion having a length of 300 mm, and a container wall having a thickness of 1.5 mm. Oxidize the inner surface of the part to 100-1
A 50 μm B 2 O 3 layer was formed. The growth vessel contains <
100> growth direction seed crystal and dopant Zn2850m
g and 1100 g of GaAs polycrystal, the temperature was raised in a vertical Bridgman furnace, and the GaAs polycrystal was first melted and seeded, and the furnace with a temperature gradient set at 10 ° C./cm was moved at a speed of 5 mm / hr. And single crystallized in about 81 hours. The obtained Zn-doped GaAs single crystal was 1930
g, the solidification rate is 0.37, and the carrier concentration is 1.7 ×
High quality p with 10 19 cm -2 and dislocation density of 2270 cm -2
It was a type single crystal. In addition, although growth was performed 13 times under the same conditions, all single crystals of 1430 to 2001 g could be obtained.
【００１２】（実施例３）図２のＰＢＮ製縦型成長容器
を用いて垂直ブリッジマン法でＳｉドープＧａＡｓ単結
晶を成長させた。該成長容器は、種結晶設置部の内径が
１２ｍｍ、結晶成長部の内径が８２ｍｍ、結晶成長部の
長さが２００ｍｍ、容器壁の厚みが２ｍｍのものを使用
し、予め成長容器内面全体を酸化して５０〜２８０μｍ
のＢ2 Ｏ3層を形成した。該成長容器には、＜１００＞
成長方位の種結晶とドーパントＳｉ４５０ｍｇ及びＧａ
Ａｓ多結晶５０００ｇを収容した後、垂直ブリッジマン
炉中で昇温し、まず、ＧａＡｓ多結晶を溶解し、種付け
し、温度勾配を１０℃／ｃｍに設定した炉を移動速度５
ｍｍ／ｈｒで移動して約８３時間で単結晶化させた。得
られたＳｉドープＧａＡｓ単結晶は３２００ｇであり、
固化率が０．１５、キャリア濃度が１．５×１０18ｃｍ
-2、転位密度が３００ｃｍ-2の高品質のｎ型単結晶であ
った。また、同一条件で２９回成長を実施したが、全て
２００１〜３３１１ｇの単結晶を得ることができた。(Example 3) A Si-doped GaAs single crystal was grown by a vertical Bridgman method using a vertical growth vessel made of PBN shown in FIG. The growth vessel used had a seed crystal installation portion having an inner diameter of 12 mm, a crystal growth portion having an inner diameter of 82 mm, a crystal growth portion having a length of 200 mm, and a container wall having a thickness of 2 mm. 50 to 280 μm
To the formation of B 2 O 3 layer. The growth vessel contains <100>
Growth orientation seed crystal and dopant Si 450 mg and Ga
After containing 5000 g of As polycrystal, the temperature was raised in a vertical Bridgman furnace, and the GaAs polycrystal was first melted and seeded, and the furnace with a temperature gradient of 10 ° C./cm was moved at a moving speed of 5 ° C.
The crystal was moved at a speed of mm / hr and was crystallized in about 83 hours. The obtained Si-doped GaAs single crystal weighs 3200 g,
Solidification rate 0.15, carrier concentration 1.5 × 10 18 cm
-2 , a high-quality n-type single crystal having a dislocation density of 300 cm -2 . In addition, although growth was performed 29 times under the same conditions, 2001 to 3311 g of single crystals were obtained in all cases.
【００１３】（比較例）図３のＰＢＮ製縦型成長容器を
用いて、実施例１と同様にＳｉドープＧａＡｓ単結晶を
成長させた。該成長容器の形状は実施例１と同様である
が、種結晶設置部内面のＢ2 Ｏ3 層は省略した。そし
て、図２に示すように、ＧａＡｓ多結晶の下に２０ｇの
Ｂ2 Ｏ3 を挿入し、垂直ブリッジマン炉中で昇温し、ま
ず、Ｂ2 Ｏ 3 を溶融した後、実施例１と同様にして結晶
化させたが、種結晶設置部内面にＢ 2 Ｏ3 が均一に付着
させることができず、付着しなかった箇所から＜１００
＞成長方位と異なる成長面で結晶成長が始まり、多結晶
化してしまった。Comparative Example A vertical growth vessel made of PBN shown in FIG.
And a Si-doped GaAs single crystal as in Example 1.
Grew. The shape of the growth vessel is the same as in Example 1.
Is B inside the seed crystalTwoOThreeLayers are omitted. Soshi
Thus, as shown in FIG.
BTwoOThreeAnd raise the temperature in a vertical Bridgeman furnace.
No, BTwoO ThreeIs melted, and then crystallized in the same manner as in Example 1.
But B on the inner surface of the seed crystal TwoOThreeAdheres evenly
<100 from the non-adhered area
> Crystal growth begins on a growth surface different from the growth direction,
It has become.
【００１４】[0014]
【発明の効果】本発明は、上記の構成を採用することに
より、垂直ブリッジマン法や垂直温度勾配凝固法で化合
物半導体単結晶を成長するときに、単結晶化率を向上さ
せることができ、結晶製造コストの大幅な低減を可能に
した。According to the present invention, when the compound semiconductor single crystal is grown by the vertical Bridgman method or the vertical temperature gradient solidification method by employing the above structure, the single crystallization ratio can be improved. This has enabled a significant reduction in crystal manufacturing costs.
【図１】本発明の１具体例である化合物半導体結晶成長
用縦型容器の概念図である。FIG. 1 is a conceptual diagram of a vertical container for growing a compound semiconductor crystal, which is one specific example of the present invention.
【図２】本発明の他の具体例である化合物半導体結晶成
長用縦型容器の概念図である。FIG. 2 is a conceptual diagram of a vertical container for growing a compound semiconductor crystal according to another embodiment of the present invention.
【図３】従来の化合物半導体結晶成長用縦型容器の概念
図である。FIG. 3 is a conceptual view of a conventional vertical container for growing a compound semiconductor crystal.
Claims (4)
体結晶成長用縦型容器において、上記容器内面のうち少
なくとも種結晶設置部の内面に、上記容器を構成する元
素の少なくとも１種以上を含んだ酸化物層を予め形成し
たことを特徴とする化合物半導体結晶成長用縦型容器。1. A vertical container for growing a compound semiconductor crystal having a seed crystal setting portion at a bottom portion, wherein at least one or more of the elements constituting the container are provided on at least the inner surface of the seed crystal setting portion of the container inner surface. A vertical container for growing a compound semiconductor crystal, wherein an oxide layer containing the compound is formed in advance.
体結晶成長用縦型容器において、上記容器を構成する元
素の少なくとも１種以上を含んだ酸化物層を上記容器内
面全体に予め形成したことを特徴とする化合物半導体結
晶成長用縦型容器。2. In a vertical container for growing a compound semiconductor crystal having a seed crystal installation portion at a bottom portion, an oxide layer containing at least one of the elements constituting the container is previously formed on the entire inner surface of the container. A vertical container for growing a compound semiconductor crystal.
層をＢ2 Ｏ3 で構成したことを特徴とする請求項１又は
２記載の化合物半導体結晶成長用縦型容器。3. The vertical container for growing a compound semiconductor crystal according to claim 1, wherein said container is made of PBN, and said oxide layer is made of B 2 O 3 .
をＳｉＯ2 で構成したことを特徴とする請求項１又は２
記載の化合物半導体結晶成長用縦型容器。Wherein said container is constituted by Si, according to claim 1 or 2, characterized in that constitute the oxide layer of SiO 2
The vertical container for growing a compound semiconductor crystal according to the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02773593A JP3216298B2 (en) | 1993-02-17 | 1993-02-17 | Vertical container for compound semiconductor crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02773593A JP3216298B2 (en) | 1993-02-17 | 1993-02-17 | Vertical container for compound semiconductor crystal growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06239686A JPH06239686A (en) | 1994-08-30 |
| JP3216298B2 true JP3216298B2 (en) | 2001-10-09 |
Family
ID=12229289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02773593A Expired - Lifetime JP3216298B2 (en) | 1993-02-17 | 1993-02-17 | Vertical container for compound semiconductor crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3216298B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671490B1 (en) * | 1994-03-11 | 1998-12-16 | Sumitomo Electric Industries, Ltd. | Method of and crucible for preparing compound semiconductor crystal |
| EP0744476B1 (en) * | 1995-05-26 | 2000-08-02 | Sumitomo Electric Industries, Ltd. | Method of preparing group II-VI or III-V compound single crystal |
| JP2006327895A (en) * | 2005-05-27 | 2006-12-07 | Sumitomo Electric Ind Ltd | Method for manufacturing compound semiconductor single crystal, vertical pbn vessel for the same, and method for selecting vessel |
| WO2011122570A1 (en) * | 2010-03-29 | 2011-10-06 | 住友電気工業株式会社 | Production method for semiconductor single crystal |
-
1993
- 1993-02-17 JP JP02773593A patent/JP3216298B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06239686A (en) | 1994-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000143397A (en) | Gallium arsenic single crystal | |
| US4944925A (en) | Apparatus for producing single crystals | |
| JP3216298B2 (en) | Vertical container for compound semiconductor crystal growth | |
| JP2010260747A (en) | Method for producing semiconductor crystal | |
| JP2690419B2 (en) | Single crystal growing method and apparatus | |
| JPH07330482A (en) | Method and apparatus for growing single crystal | |
| WO2003068696A1 (en) | Production method for compound semiconductor single crystal | |
| JP2004277266A (en) | Method for manufacturing compound semiconductor single crystal | |
| JP2814657B2 (en) | Method for growing compound semiconductor single crystal | |
| JP2585415B2 (en) | Single crystal manufacturing equipment | |
| JP3806793B2 (en) | Method for producing compound semiconductor single crystal | |
| JP2758038B2 (en) | Single crystal manufacturing equipment | |
| JPS6058196B2 (en) | Compound semiconductor single crystal pulling method and device | |
| JP2001072488A (en) | Method for producing solid solution single crystal | |
| JP3042168B2 (en) | Single crystal manufacturing equipment | |
| JPH09295887A (en) | Growing of crystal and crucible for growing | |
| JPH05310494A (en) | Growth of single crystal | |
| JP2004161559A (en) | Apparatus for manufacturing compound semiconductor | |
| JPH03193689A (en) | Production of compound semiconductor crystal | |
| JPH0764670B2 (en) | Single crystal growth method and growth apparatus | |
| JPH0380180A (en) | Device for producing single crystal | |
| JP2000154089A (en) | B2o3 material for coating surface of wall of crucible, its production, production of single crystal using same and single crystal produced by said production | |
| JPH09286700A (en) | Production of single crystal and apparatus for producing single crystal as well as raw material housing vessel used for the same | |
| JP2005047797A (en) | InP SINGLE CRYSTAL, GaAs SINGLE CRYSTAL, AND METHOD FOR PRODUCING THEM | |
| JP2006001771A (en) | GaAs POLYCRYSTAL, ITS MANUFACTURING METHOD, AND MANUFACTURING FURNACE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080803 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080803 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090803 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090803 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100803 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110803 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120803 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130803 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |