JP3214440B2 - Method of manufacturing resistance element and resistance element - Google Patents
Method of manufacturing resistance element and resistance elementInfo
- Publication number
- JP3214440B2 JP3214440B2 JP09179198A JP9179198A JP3214440B2 JP 3214440 B2 JP3214440 B2 JP 3214440B2 JP 09179198 A JP09179198 A JP 09179198A JP 9179198 A JP9179198 A JP 9179198A JP 3214440 B2 JP3214440 B2 JP 3214440B2
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- Prior art keywords
- internal electrodes
- thickness
- thickness direction
- adjacent
- opposing
- Prior art date
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、抵抗素子及びその
製造方法に関し、より詳細には、抵抗素体内に対向内部
電極対が厚み方向に複数形成されている構造を有する抵
抗素子及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance element and a method for manufacturing the same, and more particularly, to a resistance element having a structure in which a plurality of opposing internal electrode pairs are formed in a resistor body in a thickness direction and a method for manufacturing the same. About.
【０００２】[0002]
【従来の技術】従来、温度検出素子や回路部品の温度補
償を行う素子として、種々のサーミスタ素子が提案され
ている。この種のサーミスタ素子では、用途に応じて、
様々な抵抗値を有するものを提供することが求められて
いる。このような要求に応えるものとして、特開平４−
１３０７０２号公報には、複数の対向内部電極対をサー
ミスタ素体内に形成してなるサーミスタ素子が開示され
ている。この従来のサーミスタ素子の構造を、図７を参
照して説明する。2. Description of the Related Art Conventionally, various thermistor elements have been proposed as temperature detecting elements or elements for performing temperature compensation of circuit components. In this type of thermistor element, depending on the application,
There is a need to provide those having various resistance values. To meet such a demand, Japanese Patent Laid-Open No.
No. 130702 discloses a thermistor element in which a plurality of opposed internal electrode pairs are formed in a thermistor body. The structure of this conventional thermistor element will be described with reference to FIG.
【０００３】サーミスタ素子９１は、半導体セラミック
スよりなるサーミスタ素体９２を用いて構成されてい
る。サーミスタ素体９２は、対向し合う第１，第２の端
面９２ａ，９２ｂを有する。第１の端面９２ａに引き出
されるように、複数の第１の内部電極９３ａ〜９３ｆが
サーミスタ素体９２内に形成されている。複数の第１の
内部電極９３ａ〜９３ｆは、異なる高さ位置に形成され
ている。また、端面９２ｂに引き出されるように、かつ
第２の内部電極９４ａ〜９４ｆが形成されている。第２
の内部電極９４ａ〜９４ｆはサーミスタ素体９２の異な
る高さ位置に形成されている。The thermistor element 91 is formed using a thermistor element 92 made of semiconductor ceramics. The thermistor body 92 has opposed first and second end faces 92a and 92b. A plurality of first internal electrodes 93a to 93f are formed in the thermistor body 92 so as to be drawn out to the first end face 92a. The plurality of first internal electrodes 93a to 93f are formed at different height positions. Further, second internal electrodes 94a to 94f are formed so as to be drawn out to the end face 92b. Second
Are formed at different heights of the thermistor body 92.
【０００４】第１の内部電極９３ａ〜９３ｆと、第２の
内部電極９４ａ〜９４ｆとは、それぞれ、、互いの先端
が所定距離を隔てて水平方向において対向し合うように
配置されている。例えば、第１の内部電極９３ａと、第
２の内部電極９４ａとが、同一高さ位置において、互い
の先端が対向するように配置されている。残りの第１の
内部電極９３ｂ〜９３ｆのそれぞれと、第２の内部電極
９４ｂ〜９４ｆのそれぞれも、同一高さ位置において対
向されている。[0004] The first internal electrodes 93a to 93f and the second internal electrodes 94a to 94f are arranged such that their respective tips face each other in the horizontal direction at a predetermined distance. For example, the first internal electrode 93a and the second internal electrode 94a are arranged at the same height position so that their tips face each other. Each of the remaining first internal electrodes 93b to 93f and each of the second internal electrodes 94b to 94f are also opposed at the same height position.
【０００５】言い換えれば、同一高さ位置にある第１，
第２の内部電極により構成される対向内部電極対が、サ
ーミスタ素体９２内においてサーミスタ素体層を介して
隔てられて厚み方向に複数形成されている。サーミスタ
素子９１では、厚み方向に隣接する対向内部電極対間の
サーミスタ素体層の厚みは全て等しくされている。[0005] In other words, the first and the first at the same height position
A plurality of opposing internal electrode pairs constituted by the second internal electrodes are formed in the thermistor element body 92 in the thickness direction, separated by a thermistor element layer. In the thermistor element 91, the thicknesses of the thermistor element layers between the pair of opposing internal electrodes adjacent in the thickness direction are all equal.
【０００６】なお、９５，９６は第１，第２の外部電極
を示し、内部電極９３ａ〜９３ｆ及び内部電極９４ａ〜
９４ｆにそれぞれ接続されている。サーミスタ素子９１
では、上記のように、複数の対向内部電極対を有するた
め、各対向内部電極対における第１，第２の内部電極間
の対向ギャップの大きさ、並びに対向内部電極対の積層
数を調整することにより、様々な抵抗値を実現し得ると
されている。Reference numerals 95 and 96 denote first and second external electrodes, and internal electrodes 93a to 93f and internal electrodes 94a to 94a.
94f respectively. Thermistor element 91
As described above, since a plurality of opposing internal electrode pairs are provided as described above, the size of the opposing gap between the first and second internal electrodes in each opposing internal electrode pair and the number of stacked opposing internal electrode pairs are adjusted. Thus, various resistance values can be realized.
【０００７】[0007]
【発明が解決しようとする課題】サーミスタ素子では、
抵抗値の分布ばらつきが少ないことが強く求められてい
る。しかしながら、従来のサーミスタ素子９１では、様
々な抵抗値を有するサーミスタ素子を得ることは可能で
あるものの、抵抗値の分布ばらつきを小さくすることが
難しく、歩留りが低下するという問題があった。SUMMARY OF THE INVENTION In the thermistor element,
There is a strong demand for a small variation in resistance value distribution. However, in the conventional thermistor element 91, although it is possible to obtain thermistor elements having various resistance values, it is difficult to reduce the variation in the resistance value distribution, and there is a problem that the yield is reduced.
【０００８】すなわち、上記サーミスタ素体９２を得る
にあたっては、先ず、セラミックグリーンシート上に対
向内部電極対を形成するための第１，第２の内部電極を
導電ペーストの印刷により付与する。次に、第１，第２
の内部電極が印刷されたセラミックグリーンシートを、
間に無地のセラミックグリーンシートを介して積層し、
上下にさらに無地のセラミックグリーンシートを適宜の
枚数積層し、積層体を得る。さらに、この積層体を焼成
してサーミスタ素体９２を得ている。That is, to obtain the thermistor body 92, first, first and second internal electrodes for forming a pair of opposing internal electrodes are formed on a ceramic green sheet by printing a conductive paste. Next, the first and second
The ceramic green sheet printed with the internal electrodes of
Laminated with a plain ceramic green sheet in between,
An appropriate number of plain ceramic green sheets are further laminated on the upper and lower sides to obtain a laminate. Further, the laminate is fired to obtain a thermistor body 92.
【０００９】ところが、上記第１，第２の内部電極を、
導電ペーストの印刷により形成する場合、導電ペースト
の印刷精度をさほど高めることができないため、得られ
た多数のサーミスタ素子９１において抵抗値の分布ばら
つきが大きくなり、抵抗値分布の中心が、目的とする抵
抗値からずれがちであった。従って、抵抗値のばらつき
が小さいことが求められる製品においては、良品率がか
なり低下するという問題があった。However, the first and second internal electrodes are
In the case where the conductive paste is formed by printing, the printing accuracy of the conductive paste cannot be increased so much that the distribution of resistance values of the obtained thermistor elements 91 becomes large, and the center of the resistance value distribution is the target. It tends to deviate from the resistance value. Therefore, in a product that requires a small variation in the resistance value, there is a problem that the non-defective rate is considerably reduced.
【００１０】上記のような問題点は、サーミスタ素子９
１だけでなく、同様の内部電極構造を有する、バリスタ
や固定抵抗素子でも問題となっていた。本発明の目的
は、様々な抵抗値を容易に実現し得るだけでなく、抵抗
値の分布ばらつきが小さい、抵抗素子の製造方法及びそ
のような抵抗素子を提供することにある。[0010] The above-mentioned problems are caused by the thermistor element 9.
A varistor and a fixed resistance element having a similar internal electrode structure as well as the above-mentioned one have been problematic. An object of the present invention is to provide a method for manufacturing a resistance element and a resistance element which can not only easily realize various resistance values, but also have small variation in resistance value distribution.
【００１１】[0011]
【課題を解決するための手段】請求項１に記載の発明
は、抵抗素体の対向し合う第１，第２の端面に第１，第
２の外部電極が形成されており、第１，第２の外部電極
にそれぞれ接続されており、かつ互いの先端が対向する
ように第１，第２の内部電極が抵抗素体内の同一高さ位
置に形成されており、第１，第２の内部電極で構成され
る対向内部電極対が抵抗素体層を介して隔てられて厚み
方向に複数形成されている抵抗素子の製造方法におい
て、目的とする抵抗値に応じて、厚み方向に隣接する対
向内部電極対間の抵抗素体層の厚みを調整することを特
徴とする。According to a first aspect of the present invention, a first and a second external electrode are formed on opposed first and second end faces of a resistor element. The first and second internal electrodes are connected to the second external electrodes, respectively, and are formed at the same height position in the resistance element so that the tips of the first and second internal electrodes face each other. In a method of manufacturing a resistance element in which a plurality of opposed internal electrode pairs formed of internal electrodes are formed in a thickness direction separated by a resistor element layer, adjacent in the thickness direction according to a target resistance value. The thickness of the resistive element layer between the pair of opposing internal electrodes is adjusted.
【００１２】請求項２に記載の発明は、少なくとも１つ
の厚み方向に隣接する対向内部電極対間の抵抗素体層の
厚みを、他の厚み方向に隣接する対向内部電極対間の抵
抗素体層の厚みと異ならせることを特徴とする。According to a second aspect of the present invention, the thickness of the resistive element layer between at least one pair of opposing internal electrodes adjacent in the thickness direction is changed by changing the thickness of the resistive element layer between the opposing internal electrode pairs adjacent in another thickness direction. It is characterized in that it differs from the thickness of the layer.
【００１３】請求項３に記載の発明は、１つの隣接する
対向内部電極対間の抵抗素体層の厚みを、残りの厚み方
向に隣接する対向内部電極対間の抵抗素体層の厚みと異
ならせることを特徴とする。According to a third aspect of the present invention, the thickness of the resistive element layer between one adjacent pair of opposing internal electrodes is adjusted to the thickness of the resistive element layer between the adjacent pair of opposing internal electrodes in the remaining thickness direction. It is characterized by being different.
【００１４】請求項４に記載の発明に係る抵抗素子の製
造方法は、互いの先端が対向し合うように配置された第
１，第２の内部電極からなる複数の対向内部電極対をセ
ラミックグリーンシートを介して積層し、積層体を得る
工程と、前記積層体を焼成して抵抗素体を得る工程と、
前記抵抗素体の対向し合う第１，第２の端面に第１，第
２の外部電極をそれぞれ形成する工程とを備え、前記積
層体を得る工程において、目的とする抵抗値に応じて、
厚み方向に隣接する対向内部電極対間に配置するセラミ
ックグリーンシートの数を調整することを特徴とする。According to a fourth aspect of the present invention, in the method for manufacturing a resistance element, a plurality of opposing internal electrode pairs including first and second internal electrodes arranged so that their tips face each other are ceramic green. Laminating through a sheet to obtain a laminate, and firing the laminate to obtain a resistor element,
Forming a first and a second external electrode on opposing first and second end faces of the resistive element, respectively, in the step of obtaining the laminate,
It is characterized in that the number of ceramic green sheets arranged between pairs of opposing internal electrodes adjacent in the thickness direction is adjusted.
【００１５】請求項５に記載の発明は、少なくとも１つ
の厚み方向に隣接する対向内部電極対間に配置されるセ
ラミックグリーンシートの数を、他の厚み方向に隣接す
る対向内部電極対間に配置されるセラミックグリーンシ
ートの数と異ならせることを特徴とする。According to a fifth aspect of the present invention, the number of ceramic green sheets arranged between at least one pair of opposing internal electrodes adjacent in the thickness direction is set between the pairs of opposing internal electrodes adjacent in another thickness direction. The number of ceramic green sheets to be formed is different.
【００１６】請求項６に記載の発明は、１つの厚み方向
に隣接する対向内部電極対に配置されるセラミックグリ
ーンシートの数を、残りの厚み方向に隣接する対向内部
電極対間に配置されるセラミックグリーンシートの数と
異ならせることを特徴とする。According to a sixth aspect of the present invention, the number of ceramic green sheets disposed on one pair of opposing internal electrodes adjacent in the thickness direction is set between the remaining pairs of opposing internal electrodes adjacent in the thickness direction. The number of ceramic green sheets is different.
【００１７】請求項７に記載の発明は、前記積層体を得
るにあたり、対向内部電極対が一方面に形成されたセラ
ミックグリーンシートを複数枚用意し、該対向内部電極
対が形成された複数枚のセラミックグリーンシートを、
少なくとも一部において間に無地のセラミックグリーン
シートを介在させて積層することを特徴とする。According to a seventh aspect of the present invention, in obtaining the laminate, a plurality of ceramic green sheets having opposing internal electrode pairs formed on one surface are prepared, and a plurality of ceramic green sheets on which the opposing internal electrode pairs are formed are provided. Ceramic green sheet,
It is characterized in that at least a part is laminated with a plain ceramic green sheet interposed therebetween.
【００１８】請求項８に記載の発明に係る抵抗素子は、
対向し合う第１，第２の端面を有する抵抗素体と、第
１，第２の端面にそれぞれ引き出されており、かつ互い
の先端が対向するように抵抗素体内の同一高さ位置に配
置された第１，第２の内部電極と、前記第１，第２の内
部電極にそれぞれ接続されており、かつ抵抗素体の第
１，第２の端面に形成された第１，第２の外部電極とを
備え、第１，第２の内部電極からなる対向内部電極対が
抵抗素体内において厚み方向に複数形成されており、か
つ少なくとも１つの厚み方向に隣接する対向内部電極対
間の抵抗素体層の厚みが、他の厚み方向に隣接する対向
内部電極対間の抵抗素体層の厚みと異ならされているこ
とを特徴とする。The resistance element according to the invention of claim 8 is:
A resistive element having first and second end faces opposed to each other; and a resistive element drawn out to the first and second end faces, respectively, and arranged at the same height position in the resistive element such that their tips face each other. First and second internal electrodes, and first and second internal electrodes respectively connected to the first and second internal electrodes and formed on the first and second end surfaces of the resistor element. A plurality of opposing internal electrode pairs each including an external electrode, the first and second internal electrodes being formed in the resistor body in the thickness direction, and a resistance between at least one opposing internal electrode pair adjacent in the thickness direction. The thickness of the element body layer is different from the thickness of the resistor element layer between the pair of opposing internal electrodes adjacent in another thickness direction.
【００１９】請求項９に記載の発明では、１つの厚み方
向に隣接する対向内部電極対間に配置される抵抗素体層
の厚みが、残りの厚み方向に隣接する対向内部電極対間
の抵抗素体層の厚みと異ならされている。According to the ninth aspect of the present invention, the thickness of the resistive element layer disposed between one pair of opposing internal electrodes adjacent in one thickness direction is equal to the resistance between the pair of opposing internal electrodes adjacent in the remaining thickness direction. It is different from the thickness of the body layer.
【００２０】[0020]
【発明の実施の形態】以下、本発明の非限定的な実施例
を挙げることにより、本発明を明らかにする。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be elucidated below with reference to non-limiting examples of the present invention.
【００２１】図１（ａ）は、本発明の第１の実施例に係
るサーミスタ素子を示す断面図であり、図２はその斜視
図を、図３を平面断面図を示す。サーミスタ素子１は、
対向し合う第１，第２の端面２ａ，２ｂを有する矩形板
状のサーミスタ素体２を有する。サーミスタ素体２は、
本実施例では、負の抵抗温度特性を示す半導体セラミッ
ク材料により構成されている。すなわち、サーミスタ素
子１は負特性サーミスタ（ＮＴＣ）素子である。FIG. 1A is a sectional view showing a thermistor element according to a first embodiment of the present invention, FIG. 2 is a perspective view thereof, and FIG. 3 is a plan sectional view thereof. The thermistor element 1
The thermistor body 2 has a rectangular plate-like thermistor body 2 having first and second end faces 2a and 2b facing each other. The thermistor body 2 is
In the present embodiment, it is made of a semiconductor ceramic material having a negative resistance-temperature characteristic. That is, the thermistor element 1 is a negative characteristic thermistor (NTC) element.
【００２２】サーミスタ素体２の端面２ａには、第１の
内部電極３ａ〜３ｆが引き出されている。また、第２の
端面２ｂには、第２の内部電極４ａ〜４ｆが引き出され
ている。これらの内部電極のうち、第１の内部電極３ａ
と、第２の内部電極４ａとが同一高さ位置に形成されて
おり、第１の内部電極３ａの先端と第２の内部電極の先
端とが所定のギャップを隔てて対向されている。同様
に、第１の内部電極３ｂ〜３ｆと、第２の内部電極４ｂ
〜４ｆとが、それぞれ、同一高さ位置において対向され
ている。First internal electrodes 3a to 3f are drawn out from an end face 2a of the thermistor body 2. Further, second internal electrodes 4a to 4f are drawn out from the second end face 2b. Of these internal electrodes, the first internal electrode 3a
And the second internal electrode 4a are formed at the same height position, and the tip of the first internal electrode 3a and the tip of the second internal electrode are opposed to each other with a predetermined gap. Similarly, the first internal electrodes 3b to 3f and the second internal electrode 4b
To 4f are opposed to each other at the same height position.
【００２３】第１の内部電極３ａと第２の内部電極４ａ
とが、本発明における対向内部電極対を構成しており、
従って、第１の内部電極３ｂ〜３ｆのそれぞれと、第２
の内部電極４ｂ〜４ｆのそれぞれとが、同様に各対向内
部電極対を形成している。従って、サーミスタ素子１で
は、６つの対向内部電極対がサーミスタ素体２内におい
て異なる高さ位置に配置されている。First internal electrode 3a and second internal electrode 4a
And constitute the opposed internal electrode pair in the present invention,
Therefore, each of the first internal electrodes 3b to 3f and the second
Each of the internal electrodes 4b to 4f similarly forms each opposed internal electrode pair. Therefore, in the thermistor element 1, the six opposing internal electrode pairs are arranged at different height positions in the thermistor body 2.
【００２４】サーミスタ素体２は、セラミック積層一体
焼成技術を用いて構成されている。すなわち、内部電極
３ａ，３ｂのように、第１，第２の内部電極からなる対
向内部電極対が上面に印刷されたセラミックグリーンシ
ートを複数枚用意し、これらを積層し、かつ必要に応じ
てこれらの間に無地のセラミックグリーンシートを介在
させて積層し、上下に無地のセラミックグリーンシート
を積層し、得られた積層体を加圧した後、焼成すること
によりサーミスタ素体２を得ることができる。The thermistor body 2 is formed using a ceramic lamination integrated firing technique. That is, a plurality of ceramic green sheets, such as the internal electrodes 3a and 3b, each having a pair of opposing internal electrodes composed of first and second internal electrodes printed on the upper surface are prepared, and these are laminated, and if necessary, laminated. The thermistor body 2 can be obtained by laminating plain ceramic green sheets between them, laminating plain ceramic green sheets on the upper and lower sides, pressing the obtained laminate, and firing it. it can.
【００２５】第１，第２の端面２ａ，２ｂには、それぞ
れ、第１，第２の外部電極５，６が形成されている。第
１の外部電極５は第２の内部電極３ａ〜３ｆに接続され
ており、第２の外部電極６は第２の内部電極４ａ〜４ｆ
に接続されている。First and second external electrodes 5 and 6 are formed on the first and second end faces 2a and 2b, respectively. The first external electrode 5 is connected to the second internal electrodes 3a to 3f, and the second external electrode 6 is connected to the second internal electrodes 4a to 4f.
It is connected to the.
【００２６】なお、第１，第２の外部電極５，６は、端
面２ａ，２ｂ上だけでなく、サーミスタ素体２の上面、
下面及び両側面にも至るように形成されており、面実装
が容易なチップ型部品とされている。The first and second external electrodes 5 and 6 are not only provided on the end faces 2a and 2b but also on the upper surface of the thermistor body 2.
It is formed so as to reach the lower surface and both side surfaces, and is a chip-type component that is easily surface-mounted.
【００２７】内部電極３ａ〜３ｆ，４ａ〜４ｆは、適宜
の導電性材料により構成することができ、例えば、Ａ
ｇ、Ａｇ−Ｐｄ、Ｃｕ、Ｎｉなどにより構成することが
できる。The internal electrodes 3a to 3f and 4a to 4f can be made of an appropriate conductive material.
g, Ag-Pd, Cu, Ni or the like.
【００２８】外部電極５，６についても、適宜の導電性
材料から構成することができる。また、外部電極５，６
は、導電性及び半田付け性等を確保するために複数の金
属層を積層した構成であってもよい。例えば、Ａｇもし
くはＡｇ−Ｐｄ層上に、半田くわれを防止するためにＮ
ｉ層をメッキし、さらに半田付け性を高めるためにＮｉ
層上にＳｎ層をメッキすることにより、３層構造の外部
電極を形成してもよい。The external electrodes 5 and 6 can also be made of an appropriate conductive material. In addition, external electrodes 5 and 6
May have a configuration in which a plurality of metal layers are stacked in order to ensure conductivity and solderability. For example, on the Ag or Ag-Pd layer, N
Ni layer is plated to improve the solderability.
An external electrode having a three-layer structure may be formed by plating a Sn layer on the layer.
【００２９】サーミスタ素子１の特徴は、厚み方向に隣
接する対向内部電極対間のサーミスタ素体層のうち、上
方の４層のサーミスタ素体層２ｄのそれぞれの厚みが等
しく、かつ残りの対向内部電極対間のサーミスタ素体層
２ｃの厚みよりも薄くされていることにある。すなわ
ち、サーミスタ素体層２ｄの厚みが第１，第２の内部電
極３ｅ，４ｅからなる対向内部電極対と、第１，第２の
内部電極３ｆ，４ｆからなる対向内部電極対との間のサ
ーミスタ素体層２ｃの厚みよりも薄くされている。The thermistor element 1 is characterized in that, of the thermistor element layers between the opposing internal electrode pairs adjacent in the thickness direction, the upper four thermistor element layers 2d have the same thickness, and the remaining opposing internal electrode layers have the same thickness. That is, the thickness of the thermistor body layer 2c between the electrode pairs is made thinner. That is, the thickness of the thermistor body layer 2d is between the opposing internal electrode pair including the first and second internal electrodes 3e and 4e and the opposing internal electrode pair including the first and second internal electrodes 3f and 4f. The thickness is smaller than the thickness of the thermistor body layer 2c.
【００３０】従って、サーミスタ素子１では、対向内部
電極対の積層数や第１，第２の内部電極間の対向ギャッ
プの大きさを調整するだけでなく、上記サーミスタ層２
ｄあるいはサーミスタ素体層２ｃの厚みを調整すること
によってもサーミスタ素子１の抵抗値を調整することが
できる。Accordingly, in the thermistor element 1, not only the number of stacked opposing internal electrode pairs and the size of the opposing gap between the first and second internal electrodes are adjusted, but also the thermistor layer 2
The resistance value of the thermistor element 1 can also be adjusted by adjusting d or the thickness of the thermistor element layer 2c.
【００３１】上記対向ギャップの大きさ並びに対向内部
電極対の積層数は、予め定められているが、前述した通
り、内部電極を印刷する際の精度により、対向ギャップ
の位置や大きさ等がばらつき、抵抗値の分布ばらつきが
生じる。しかしながら、本実施例のサーミスタ素子１で
は、内部電極３ａ〜３ｆ，４ａ〜４ｆをセラミックグリ
ーンシート上に印刷した後、印刷精度が十分でなかった
場合であっても、例えば、サーミスタ素体層２ｃの厚み
を調整することにより、目的とする抵抗値に近づけるこ
とができる。The size of the opposing gap and the number of layers of opposing internal electrode pairs are predetermined, but as described above, the position and size of the opposing gap vary depending on the accuracy in printing the internal electrodes. In addition, variation in the distribution of resistance values occurs. However, in the thermistor element 1 of the present embodiment, even after the internal electrodes 3a to 3f and 4a to 4f are printed on the ceramic green sheet, even if the printing accuracy is not sufficient, for example, the thermistor element layer 2c By adjusting the thickness, the resistance value can be made closer to the target resistance value.
【００３２】なお、サーミスタ素体層２ｃの厚みについ
ては、内部電極３ｅ，４ｅが印刷されているセラミック
グリーンシートと、内部電極３ｆ，４ｆが印刷されてい
るセラミックグリーンシートとの間に挿入する無地のセ
ラミックグリーンシートの数を増減することにより容易
に行ない得る。The thickness of the thermistor body layer 2c is determined by the solid color inserted between the ceramic green sheet on which the internal electrodes 3e and 4e are printed and the ceramic green sheet on which the internal electrodes 3f and 4f are printed. It can be easily performed by increasing or decreasing the number of ceramic green sheets.
【００３３】よって、サーミスタ素子１では、内部電極
印刷精度が十分でなく、目的とする抵抗値よりも抵抗値
分布の中心が抵抗値が大きい方向にずれた場合、サーミ
スタ素体層２ｃの厚みを他のサーミスタ素体層２ｄの厚
みよりも大きくして抵抗値を低めることができるので、
抵抗値分布の中心を目的とする抵抗値に容易に近づける
ことができる。Therefore, in the thermistor element 1, when the printing accuracy of the internal electrode is not sufficient and the center of the resistance value distribution is shifted from the target resistance value in the direction of increasing the resistance value, the thickness of the thermistor element layer 2c is reduced. Since the resistance can be reduced by increasing the thickness of the other thermistor body layer 2d,
The center of the resistance value distribution can be easily brought close to the target resistance value.
【００３４】加えて、サーミスタ素体層２ｃの厚みを変
化させることにより、隣接する対向内部電極対間のサー
ミスタ素体層の厚みが全て等しい従来のサーミスタ素子
９１に比べて、より一層様々な抵抗値のサーミスタ素子
を容易に提供することができる。In addition, by changing the thickness of the thermistor element layer 2c, the resistance of the thermistor element layer can be further increased as compared with the conventional thermistor element 91 in which the thicknesses of the thermistor element layers between adjacent opposing internal electrode pairs are all equal. A value thermistor element can be easily provided.
【００３５】次に、図１（ｂ）、図４（ａ）〜（ｃ）、
図５（ａ）及び図６に示す各サーミスタ素子の製造方法
を説明することにより、本発明のサーミスタ素子の製造
方法によって抵抗値の分布中心ばらつきを小さくし得る
ことを明らかにする。Next, FIG. 1B, FIGS. 4A to 4C,
By explaining the method for manufacturing each thermistor element shown in FIGS. 5A and 6, it is clarified that the method for manufacturing the thermistor element of the present invention can reduce the distribution center variation of the resistance value.
【００３６】Ｍｎ、Ｎｉ、Ｃｏなどの酸化物を複数種用
いてなる半導体セラミック粉末に、有機バインダ、分散
剤、消泡剤及び水を混合し、セラミックスラリーを得
た。このセラミックスラリーを用い、厚み５０μｍのセ
ラミックグリーンシートを成形した。An organic binder, a dispersant, an antifoaming agent, and water were mixed with a semiconductor ceramic powder using a plurality of oxides such as Mn, Ni, and Co to obtain a ceramic slurry. Using this ceramic slurry, a ceramic green sheet having a thickness of 50 μm was formed.
【００３７】上記のようにして得たセラミックグリーン
シートを所定寸法の矩形形状に打ち抜き、マザーのセラ
ミックグリーンシートを得た。このマザーのセラミック
グリーンシートの上面に導電ペーストを印刷することに
より、第１，第２の内部電極３ａ〜３ｆ及び４ａ〜４ｆ
に相当する内部電極を複数形成した。The ceramic green sheet obtained as described above was punched into a rectangular shape having a predetermined size to obtain a mother ceramic green sheet. By printing a conductive paste on the upper surface of the mother ceramic green sheet, the first and second internal electrodes 3a to 3f and 4a to 4f are printed.
A plurality of internal electrodes corresponding to were formed.
【００３８】次に、複数の対向内部電極対が印刷された
セラミックグリーンシートを６枚積層し、すなわち内部
電極が印刷されていない無地のセラミックグリーンシー
トを内部電極が印刷されているセラミックグリーンシー
ト間に挿入することなく積層し、さらに上下に適宜の枚
数の無地のセラミックグリーンシートを積層し、得られ
た積層体を焼成し、サーミスタ素体を得た。Next, six ceramic green sheets on which a plurality of opposing internal electrode pairs are printed are laminated, that is, plain ceramic green sheets on which internal electrodes are not printed are placed between ceramic green sheets on which internal electrodes are printed. , And an appropriate number of plain ceramic green sheets were laminated one above the other, and the resulting laminate was fired to obtain a thermistor body.
【００３９】このようにして得たサーミスタ素体の端面
に外部電極５，６を形成し、図４（ａ）に示すサーミス
タ素子２１を得た。なお、外部電極５，６の形成は、Ａ
ｇ含有導電ペーストの塗布・焼付けにより行った。External electrodes 5 and 6 were formed on the end faces of the thermistor element thus obtained, and a thermistor element 21 shown in FIG. 4A was obtained. The external electrodes 5 and 6 are formed by A
The g-containing conductive paste was applied and baked.
【００４０】上記サーミスタ素子２１における厚み方向
に隣接する対向内部電極対間には、上述したように無地
のセラミックグリーンシートが挿入されていない。従っ
て、隣接する対向内部電極対間のサーミスタ素体層に挿
入される無地のセラミックグリーンシートの数を基準と
して、６層の対向内部電極対間の５層のサーミスタ素体
層の構成を上方から下方の順に表すと、「０００００」
となる。As described above, a plain ceramic green sheet is not inserted between a pair of opposing internal electrodes adjacent to each other in the thickness direction of the thermistor element 21. Therefore, based on the number of plain ceramic green sheets inserted into the thermistor element layer between adjacent opposing internal electrode pairs, the configuration of the five thermistor element layers between the six opposing internal electrode pairs is changed from above. When expressed in the lower order, "00000"
Becomes
【００４１】次に、上記サーミスタ素子２１の製造方法
において、対向内部電極対が印刷されたセラミックグリ
ーンシートを６枚積層するに当たり、各セラミックグリ
ーンシート間に、無地のセラミックグリーンシートを１
枚挿入したことを除いては、上記と同様にして図４
（ｂ）に示すサーミスタ素子３１を得た。このサーミス
タ素子３１においては、厚み方向に隣接する対向内部電
極対間のサーミスタ素体層を構成するために、それぞ
れ、１枚の無地のセラミックグリーンシートが挿入され
ている。従って、上述した表現で５層のサーミスタ素体
層を表すと、「１１１１１」となる。Next, in the method of manufacturing the thermistor element 21, when stacking six ceramic green sheets on which the opposed internal electrode pairs are printed, one plain ceramic green sheet is interposed between the ceramic green sheets.
4 in the same manner as described above, except that
The thermistor element 31 shown in (b) was obtained. In the thermistor element 31, one plain ceramic green sheet is inserted into each of the thermistor element layers between the opposing internal electrode pairs adjacent in the thickness direction. Therefore, when the five thermistor element layers are represented in the above expression, the result is “11111”.
【００４２】同様に、サーミスタ素子２１の製造方法に
おいて、隣接する対向内部電極対間のサーミスタ層を構
成するのに２枚の無地のセラミックグリーンシートを挿
入したことを除いては、上記と同様にして、図４（ｃ）
に示すサーミスタ素子４１を得た。このサーミスタ素子
４１における５層のサーミスタ素体層の構成を上記と同
様に表現すると、「２２２２２」となる。Similarly, in the method of manufacturing the thermistor element 21, except that two plain ceramic green sheets were inserted to form a thermistor layer between adjacent pairs of opposing internal electrodes, the same as above. And FIG. 4 (c)
Was obtained. If the configuration of the five thermistor element layers in the thermistor element 41 is expressed in the same manner as described above, it becomes “22222”.
【００４３】また、上記厚み方向に隣接する対向内部電
極対間のサーミスタ素体層を構成するのに用いた無地の
セラミックグリーンシートの数を異ならせたことを除い
ては、上記と同様にして図１（ａ）に示すサーミスタ素
子１、図１（ｂ）に示したサーミスタ素子１１、図５
（ａ）及び（ｂ）に示したサーミスタ素子５１，６１及
び図６に示したサーミスタ素子７１をそれぞれ得た。Further, except that the number of solid ceramic green sheets used for forming the thermistor body layer between the pair of opposing internal electrodes adjacent in the thickness direction was changed, the same as above was performed. Thermistor element 1 shown in FIG. 1A, thermistor element 11 shown in FIG.
The thermistor elements 51 and 61 shown in (a) and (b) and the thermistor element 71 shown in FIG. 6 were obtained.
【００４４】図１（ａ）に示したサーミスタ素子１で
は、厚み方向に隣接する対向内部電極対間にそれぞれ配
置された５層のサーミスタ層は、「００００１」で表さ
れ、サーミスタ素子１１では、「０１１１１」で表され
る。図５に示したサーミスタ素子５１では、５層のサー
ミスタ素体層の構成は「２１１１１」で表され、サーミ
スタ素子６１では、「２２２２１」で表される。また、
図６に示したサーミスタ素子７１では、「４１１１１」
で表される。In the thermistor element 1 shown in FIG. 1A, the five thermistor layers respectively arranged between the pair of opposing internal electrodes adjacent in the thickness direction are represented by “00001”. It is represented by “01111”. In the thermistor element 51 shown in FIG. 5, the configuration of the five thermistor element layers is represented by "21111", and in the thermistor element 61, it is represented by "22221". Also,
In the thermistor element 71 shown in FIG.
It is represented by
【００４５】上記のようにして得た、各サーミスタ素子
の抵抗値Ｒ25（２５℃における抵抗値）を測定したとこ
ろ、下記の表１に示す結果が得られた。また、サーミス
タ素子７１の最上部に位置する厚み方向に隣接する対向
内部電極対間のサーミスタ素体層２ｅを構成するための
セラミックグリーンシートの数を４枚から０〜３枚に変
更し、他は同様にしてサーミスタ素子７１Ａ〜７１Ｄを
作製した。このようにして得られた各サーミスタ素子の
抵抗値Ｒ25を下記の表１に示す。なお、サーミスタ素子
７１Ｂ，７１Ｃ，７１Ｄはそれぞれサーミスタ素子５
１，３１，１１に相当する。When the resistance R 25 (resistance at 25 ° C.) of each thermistor element obtained as described above was measured, the results shown in Table 1 below were obtained. Further, the number of ceramic green sheets for forming the thermistor body layer 2e between the pair of opposing internal electrodes adjacent to each other in the thickness direction located at the uppermost part of the thermistor element 71 was changed from 4 sheets to 0 to 3 sheets. Manufactured thermistor elements 71A to 71D in the same manner. Table 1 below shows the resistance R 25 of each thermistor element thus obtained. The thermistor elements 71B, 71C and 71D are respectively connected to the thermistor elements 5B.
1, 31 and 11.
【００４６】[0046]
【表１】 [Table 1]
【００４７】表１から明らかなように、「１１１１１」
で表されるサーミスタ素子３１を基準とすると、隣接す
る対向内部電極対間のサーミスタ層の厚みがより薄いサ
ーミスタ素子２１では、抵抗値が高くなり、逆に隣接す
る対向内部電極対間のサーミスタ層の厚みが厚くされた
サーミスタ素子４１では抵抗値が低くなることがわか
る。As is clear from Table 1, "11111"
With respect to the thermistor element 31 represented by the following formula, the resistance of the thermistor element 21 having a smaller thickness between the adjacent opposing internal electrode pairs is increased, and conversely, the thermistor layer between the adjacent opposing internal electrode pairs is increased. It can be seen that the resistance value of the thermistor element 41 having a larger thickness becomes lower.
【００４８】従って、サーミスタ素子２１，１１，５１
〜７１のように、少なくとも１つの隣接する対向内部電
極対間のサーミスタ素体層の厚みを、残りの厚み方向に
隣接する対向内部電極対間のサーミスタ素体層の厚みと
異ならせるように構成することにより、種々の抵抗値を
実現し得ることがわかる。Therefore, the thermistor elements 21, 11, 51
As described above, the thickness of the thermistor element layer between at least one adjacent pair of opposing internal electrodes is made different from the thickness of the thermistor element layer between adjacent pairs of opposing internal electrodes in the remaining thickness direction. It can be seen that various resistance values can be realized by doing this.
【００４９】例えば、サーミスタ素子３１を量産するに
あたり、第１，第２の内部電極からなる対向内部電極対
をセラミックグリーンシート上に印刷し、上記のように
してサーミスタ素子３１を作製し、その抵抗値を測定し
たところ、抵抗値の分布ばらつきの中心が目標とする抵
抗値よりも大きかったとする。その場合には目的とする
抵抗値に近づけるように、すなわち隣接する対向内部電
極対間のサーミスタ素体層の厚みを、サーミスタ素子５
１，６１のように、少なくとも１つの厚み方向に隣接す
る対向内部電極対間のサーミスタ素体層の厚みを、残り
の厚み方向に隣接する対向内部電極対間のサーミスタ素
体層の厚みより厚くするように構成すれば、得られるサ
ーミスタ素子の抵抗値分布の中心を目標とする抵抗値に
近づけることができる。For example, in mass-producing the thermistor element 31, a pair of opposing internal electrodes composed of first and second internal electrodes are printed on a ceramic green sheet, and the thermistor element 31 is manufactured as described above. When the value is measured, it is assumed that the center of the resistance value distribution variation is larger than the target resistance value. In that case, the thickness of the thermistor element layer between adjacent opposing internal electrode pairs should be adjusted so as to approach the target resistance value.
As in 1,61, the thickness of the thermistor element layer between at least one pair of opposing internal electrodes adjacent in the thickness direction is greater than the thickness of the thermistor element layer between the opposing internal electrode pairs adjacent in the remaining thickness direction. With this configuration, the center of the obtained resistance value distribution of the thermistor element can be made closer to the target resistance value.
【００５０】例えば、第１，第２の内部電極３ａ，４ａ
からなる対向内部電極対と、第１，第２の内部電極３
ｂ，４ｂからなる対向内部電極対との間に、２枚の無地
のセラミックグリーンシートを挿入し、サーミスタ素子
５１を製造すれば、その抵抗値をサーミスタ素子３１の
抵抗値よりも低めることができる。同様に、サーミスタ
素子６１のように、内部電極３ｅ，４ｅからなる対向内
部電極対と、内部電極３ｆ，４ｆからなる対向内部電極
対との間のサーミスタ素体層の厚みに比べて、残りの隣
接する対向内部電極対間のサーミスタ素体層の厚みを厚
くするように、すなわち残りの厚み方向に隣接する対向
内部電極対間では無地のセラミックグリーンシートを２
枚用いることにより、抵抗値を低めることができる。For example, the first and second internal electrodes 3a, 4a
A pair of opposing internal electrodes, and first and second internal electrodes 3
By inserting two plain ceramic green sheets between the pair of opposed internal electrodes b and 4b and manufacturing the thermistor element 51, the resistance value can be made lower than the resistance value of the thermistor element 31. . Similarly, as in the thermistor element 61, the thickness of the thermistor element layer between the opposed internal electrode pair including the internal electrodes 3e and 4e and the opposed internal electrode pair including the internal electrodes 3f and 4f is smaller than the thickness of the remaining thermistor element layer. In order to increase the thickness of the thermistor body layer between adjacent pairs of opposing internal electrodes, that is, to form two plain ceramic green sheets between adjacent pairs of opposing internal electrodes in the remaining thickness direction
By using a single sheet, the resistance value can be reduced.
【００５１】逆に、製造したサーミスタ素子３１の抵抗
値分布の中心が目標とする抵抗値よりも低かった場合に
は、図１（ａ）及び（ｂ）に示したサーミスタ素子１，
１１のように、少なくとも１つの厚み方向に隣接する対
向内部電極対間のサーミスタ素体層２ｄの厚みを残りの
対向内部電極対間のサーミスタ素体層２ｃの厚みよりも
薄くすればよい。すなわち、サーミスタ素子１では、内
部電極３ｅ，４ｅからなる対向内部電極対と、内部電極
３ｆ，４ｆからなる対向内部電極対との間では１枚の無
地のセラミックグリーンシートを挿入してサーミスタ素
体層が構成されているが、残りのサーミスタ素体層２ｄ
では、無地のセラミックグリーンシートが用いられてお
らず、従って、抵抗値を高めることができる。Conversely, when the center of the resistance value distribution of the manufactured thermistor element 31 is lower than the target resistance value, the thermistor element 1 shown in FIGS.
As in 11, the thickness of the thermistor element layer 2d between at least one opposing internal electrode pair adjacent in the thickness direction may be smaller than the thickness of the thermistor element layer 2c between the remaining opposing internal electrode pairs. That is, in the thermistor element 1, one plain ceramic green sheet is inserted between the pair of opposed internal electrodes composed of the internal electrodes 3e and 4e and the pair of opposed internal electrodes composed of the internal electrodes 3f and 4f. Layer is formed, but the remaining thermistor body layer 2d
Does not use a plain ceramic green sheet, so that the resistance value can be increased.
【００５２】このように、本発明においては、複数の対
向内部電極対を形成するにあたり、少なくとも１つの厚
み方向に隣接する対向内部電極対間のサーミスタ素体層
の厚みを、他の対向内部電極対間のサーミスタ素体層の
厚みと異ならせることにより、抵抗値を容易に調整する
ことができる。従って、サーミスタ素子７１，７１Ａ〜
７１Ｄの抵抗値から明らかなように、最上部に位置する
内部電極３ａ，４ａからなる対向内部電極対と、上から
２番目に位置する内部電極３ｂ，４ｂからなる対向内部
電極対との間のサーミスタ層２ｅの厚みを、無地のセラ
ミックグリーンシートの使用枚数を変化させることによ
り、抵抗値を容易に調整し得ることがわかる。As described above, according to the present invention, when forming a plurality of opposing internal electrode pairs, the thickness of the thermistor element layer between at least one pair of opposing internal electrodes adjacent in the thickness direction is changed to the other opposing internal electrode pairs. By making the thickness of the thermistor body layer between the pair different, the resistance value can be easily adjusted. Therefore, the thermistor elements 71, 71A-
As is clear from the resistance value of 71D, the distance between the opposing internal electrode pair including the uppermost internal electrodes 3a and 4a and the opposing internal electrode pair including the internal electrodes 3b and 4b positioned second from the top is determined. It can be seen that the resistance value can be easily adjusted by changing the thickness of the thermistor layer 2e by changing the number of plain ceramic green sheets used.
【００５３】すなわち、本発明に従えば、複数の対向内
部電極対の積層数及び第１，第２の内部電極間の対向ギ
ャップを調整するだけでなく、厚み方向に隣接する対向
内部電極間のサーミスタ素体層の厚みを部分的に異なら
せることにより、内部電極をセラミックグリーンシート
上に印刷した後であっても、抵抗値の調整を正確にかつ
容易に行うことができる。That is, according to the present invention, it is possible to not only adjust the number of layers of a plurality of opposed internal electrode pairs and the opposed gap between the first and second internal electrodes, but also to adjust the distance between the opposed internal electrodes adjacent in the thickness direction. By partially varying the thickness of the thermistor element layer, the resistance value can be adjusted accurately and easily even after the internal electrodes are printed on the ceramic green sheet.
【００５４】なお、上述した実施例では、ＮＴＣ素子に
ついて適用した例を示したが、本発明は、正の抵抗温度
特性を示すＰＴＣ（正特性サーミスタ）素子、バリス
タ、通常の固定抵抗素子などにも広く適用することがで
きる。In the above-described embodiment, an example in which the present invention is applied to an NTC element has been described. However, the present invention is applicable to a PTC (positive temperature thermistor) element, a varistor, a normal fixed resistance element, and the like exhibiting positive resistance temperature characteristics. Can also be widely applied.
【００５５】[0055]
【発明の効果】請求項１に記載の発明によれば、目的と
する抵抗値に応じて、厚み方向に隣接する対向内部電極
対間の抵抗素体層の厚みを調整することにより、量産に
際しての抵抗値の分布の中心を、目的とする抵抗値に近
づけることができ、生産に際しての良品率を高めること
が可能となる。特に、上記抵抗値の調整は、セラミック
積層一体技術により抵抗素体を得るにあたり、第１，第
２の内部電極を印刷した後においても行ない得るため、
従来法では得られなかった抵抗値の分布ばらつきの極め
て小さい抵抗素子を提供することが可能となる。According to the first aspect of the present invention, the thickness of the resistive element layer between the pair of opposing internal electrodes adjacent in the thickness direction is adjusted according to the target resistance value, so that mass production is possible. The center of the resistance value distribution can be made closer to the target resistance value, and the non-defective rate in production can be increased. In particular, the above-described adjustment of the resistance value can be performed even after printing the first and second internal electrodes when obtaining the resistor element by the ceramic lamination integrated technology.
It is possible to provide a resistance element having extremely small variation in resistance value distribution, which cannot be obtained by the conventional method.
【００５６】請求項２に記載の発明では、少なくとも１
つの対向内部電極対間の抵抗素体層の厚みを、他の隣接
する対向内部電極対間の抵抗素体層の厚みと異ならせる
ことにより行われ、従って、抵抗値の分布ばらつきを極
めて小さくすることができると共に、従来法に比べてよ
り一層様々な抵抗値の抵抗体を容易に提供することがで
きる。According to the second aspect of the present invention, at least one
This is performed by making the thickness of the resistive element layer between one pair of opposing internal electrodes different from the thickness of the resistive element layer between the other adjacent opposing internal electrode pairs. In addition to this, it is possible to easily provide resistors having various resistance values as compared with the conventional method.
【００５７】請求項３に記載の発明では、１つの厚み方
向に隣接する対向内部電極対間の抵抗素体層を、残りの
対向内部電極対間の抵抗素体層に比べて異ならせるだけ
でよいため、容易に抵抗値の調整を図り得る。According to the third aspect of the present invention, the resistance element layer between the pair of opposing internal electrodes adjacent to each other in one thickness direction is merely different from the resistance element layer between the remaining pairs of opposing internal electrodes. Therefore, the resistance value can be easily adjusted.
【００５８】請求項４に記載の発明では、積層体を得る
にあたり、目的とする抵抗値に応じて、厚み方向に隣接
する対向内部電極対間に配置される無地のセラミックグ
リーンシートの数を調整するため、得られる抵抗値の分
布の中心を、目的とする抵抗値に容易に近づけることが
でき、抵抗値の分布ばらつきの極めて小さい抵抗素子を
提供することができる。According to the fourth aspect of the present invention, in obtaining a laminate, the number of plain ceramic green sheets disposed between the pair of opposing internal electrodes adjacent in the thickness direction is adjusted in accordance with the desired resistance value. Therefore, the center of the obtained resistance value distribution can be easily brought close to the target resistance value, and a resistance element with extremely small variation in resistance value distribution can be provided.
【００５９】請求項５に記載の発明では、少なくとも１
つの厚み方向に隣接する対向内部電極対間に配置される
セラミックグリーンシートの数を、他の厚み方向に隣接
する対向内部電極対間に配置されるセラミックグリーン
シートと異ならせればよいため、セラミック積層一体焼
成技術により容易に抵抗値の調整を図ることができる。According to the fifth aspect of the present invention, at least one
The number of ceramic green sheets disposed between two pairs of opposing internal electrodes adjacent in the thickness direction may be different from the number of ceramic green sheets disposed between adjacent pairs of internal electrodes adjacent in the other thickness direction. The resistance value can be easily adjusted by the integral firing technique.
【００６０】請求項６に記載の発明では、１つの対向内
部電極対間の抵抗素体層の厚みを、残りの隣接する対向
内部電極対間の抵抗素体層の厚みと異ならせるだけでよ
いため、容易に抵抗値の分布ばらつきの少ない抵抗素子
を提供することができる。According to the sixth aspect of the present invention, the thickness of the resistive element layer between one pair of opposing internal electrodes only needs to be different from the thickness of the resistive element layer between the remaining adjacent pairs of opposing internal electrodes. Therefore, it is possible to easily provide a resistance element with less variation in resistance value distribution.
【００６１】請求項８に記載の発明に係る抵抗素子で
は、厚み方向に隣接する対向内部電極対間の抵抗素体層
の厚みが、他の厚み方向に隣接する対向内部電極対間の
抵抗素体層の厚みと異ならせれているので、従来の対向
内部電極対を複数有する抵抗素子に比べて、様々な抵抗
値を容易に実現することができると共に、抵抗値を容易
に調整することができ、抵抗値の分布ばらつきを小さく
することができる。In the resistance element according to the present invention, the thickness of the resistive element layer between the pair of opposing internal electrodes adjacent in the thickness direction is such that the resistance between the pair of opposing internal electrodes adjacent in another thickness direction is different. Since the thickness is different from the thickness of the body layer, various resistance values can be easily realized and the resistance value can be easily adjusted as compared with a conventional resistance element having a plurality of opposed internal electrode pairs. In addition, variation in resistance value distribution can be reduced.
【００６２】請求項９に記載の発明では、１つの厚み方
向に隣接する対向内部電極対間の抵抗素体層の厚みが、
残りの隣接する対向内部電極対間の抵抗素体層の厚みと
異ならされているだけであるため、容易に抵抗値の調整
を図ることができる。According to the ninth aspect of the present invention, the thickness of the resistor element layer between the pair of opposing internal electrodes adjacent in one thickness direction is:
Since the thickness of the resistive element layer is only different from that of the remaining adjacent pair of opposing internal electrodes, the resistance value can be easily adjusted.
【図１】（ａ）及び（ｂ）は、それぞれ、本発明の第
１，第２の実施例に係るサーミスタ素子を示す縦断面
図。FIGS. 1A and 1B are longitudinal sectional views showing thermistor elements according to first and second embodiments of the present invention, respectively.
【図２】本発明の一実施例に係るサーミスタ素子の外観
を示す斜視図。FIG. 2 is a perspective view showing the appearance of a thermistor element according to one embodiment of the present invention.
【図３】図１（ａ）に示した平面断面図。FIG. 3 is a plan cross-sectional view shown in FIG.
【図４】（ａ）〜（ｃ）は、それぞれ、サーミスタ素子
において対向内部電極対間のサーミスタ素体層の厚みを
異ならせた例を示す各縦断面図。FIGS. 4A to 4C are longitudinal sectional views showing examples in which the thickness of the thermistor element layer between the opposed internal electrode pairs in the thermistor element is varied.
【図５】（ａ）及び（ｂ）は、それぞれ、本発明の実施
例に従って得られたサーミスタ素子の縦断面図。FIGS. 5A and 5B are longitudinal sectional views of a thermistor element obtained according to an embodiment of the present invention, respectively.
【図６】本発明の他の実施例におけるサーミスタ素子に
用いられるサーミスタ素体を示す縦断面図。FIG. 6 is a longitudinal sectional view showing a thermistor element used in a thermistor element according to another embodiment of the present invention.
【図７】従来のサーミスタ素子の一例を示す縦断面図。FIG. 7 is a longitudinal sectional view showing an example of a conventional thermistor element.
１…サーミスタ素子 ２…サーミスタ素体 ２ａ，２ｂ…第１，第２の端面 ２ｃ，２ｄ，２ｅ…サーミスタ素体層 ３ａ〜３ｆ…第１の内部電極 ４ａ〜４ｆ…第２の内部電極 ５，６…第１，第２の外部電極 １１…サーミスタ素子 ５１…サーミスタ素子 ６１…サーミスタ素子 ７１…サーミスタ素子 DESCRIPTION OF SYMBOLS 1 ... Thermistor element 2 ... Thermistor body 2a, 2b ... 1st, 2nd end surface 2c, 2d, 2e ... Thermistor body layer 3a-3f ... 1st internal electrode 4a-4f ... 2nd internal electrode 5, 6 First and second external electrodes 11 Thermistor element 51 Thermistor element 61 Thermistor element 71 Thermistor element
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01C 7/00 H01C 17/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) H01C 7/00 H01C 17/00
Claims (9)
に第１，第２の外部電極が形成されており、第１，第２
の外部電極にそれぞれ接続されており、かつ互いの先端
が対向するように第１，第２の内部電極が抵抗素体内の
同一高さ位置に形成されており、第１，第２の内部電極
で構成される対向内部電極対が抵抗素体層を介して隔て
られて厚み方向に複数形成されている抵抗素子の製造方
法において、 目的とする抵抗値に応じて、厚み方向に隣接する対向内
部電極対間の抵抗素体層の厚みを調整することを特徴と
する、抵抗素子の製造方法。1. A first and a second external electrode are formed on opposing first and second end faces of a resistor element, and a first and a second external electrodes are formed.
, And the first and second internal electrodes are formed at the same height position in the resistor body so that the tips of the first and second internal electrodes are opposed to each other. In a method for manufacturing a resistance element, a plurality of opposing internal electrode pairs composed of a plurality of opposing internal electrode pairs formed in a thickness direction separated by a resistance element layer are provided. A method for manufacturing a resistance element, comprising adjusting the thickness of a resistance element layer between electrode pairs.
向内部電極対間の抵抗素体層の厚みを、他の厚み方向に
隣接する対向内部電極対間の抵抗素体層の厚みと異なら
せることを特徴とする、請求項１に記載の抵抗素子の製
造方法。2. The thickness of a resistive element layer between at least one pair of opposing internal electrodes adjacent in the thickness direction is made different from the thickness of the resistive element layer between opposing internal electrode pairs adjacent in another thickness direction. The method for manufacturing a resistance element according to claim 1, wherein:
素体層の厚みを、残りの厚み方向に隣接する対向内部電
極対間の抵抗素体層の厚みと異ならせることを特徴とす
る、請求項２に記載の抵抗素子の製造方法。3. The method according to claim 1, wherein the thickness of the resistive element layer between one adjacent pair of opposing internal electrodes is different from the thickness of the resistive element layer between adjacent pairs of opposing internal electrodes in the remaining thickness direction. A method for manufacturing a resistance element according to claim 2.
た第１，第２の内部電極からなる複数の対向内部電極対
をセラミックグリーンシートを介して積層し、積層体を
得る工程と、 前記積層体を焼成して抵抗素体を得る工程と、 前記抵抗素体の対向し合う第１，第２の端面に第１，第
２の外部電極をそれぞれ形成する工程とを備え、 前記積層体を得る工程において、目的とする抵抗値に応
じて、厚み方向に隣接する対向内部電極対間に配置する
セラミックグリーンシートの数を調整することを特徴と
する、抵抗素子の製造方法。4. A step of laminating a plurality of opposed internal electrode pairs each including a first and a second internal electrode disposed so that their tips face each other via a ceramic green sheet to obtain a laminated body; Baking the laminate to obtain a resistor element; and forming first and second external electrodes on opposed first and second end faces of the resistor element, respectively. In the step of obtaining a body, a method of manufacturing a resistance element, wherein the number of ceramic green sheets arranged between pairs of opposed internal electrodes adjacent in the thickness direction is adjusted according to a target resistance value.
向内部電極対間に配置されるセラミックグリーンシート
の数を、他の厚み方向に隣接する対向内部電極対間に配
置されるセラミックグリーンシートの数と異ならせるこ
とを特徴とする、請求項４に記載の抵抗素子の製造方
法。5. The number of ceramic green sheets disposed between at least one pair of opposing internal electrodes adjacent in the thickness direction is reduced by the number of ceramic green sheets disposed between adjacent pairs of internal electrodes in another thickness direction. The method for manufacturing a resistance element according to claim 4, wherein the method is different from the method.
対に配置されるセラミックグリーンシートの数を、残り
の厚み方向に隣接する対向内部電極対間に配置されるセ
ラミックグリーンシートの数と異ならせることを特徴と
する、請求項５に記載の抵抗素子の製造方法。6. If the number of ceramic green sheets disposed on one pair of opposing internal electrodes adjacent in the thickness direction is different from the number of ceramic green sheets disposed between adjacent pairs of opposing internal electrodes in the remaining thickness direction. The method for manufacturing a resistance element according to claim 5, wherein:
極対が一方面に形成されたセラミックグリーンシートを
複数枚用意し、該対向内部電極対が形成された複数枚の
セラミックグリーンシートを、少なくとも一部において
間に無地のセラミックグリーンシートを介在させて積層
することを特徴とする、請求項４〜６のいずれかに記載
の抵抗素子の製造方法。7. In obtaining the laminate, a plurality of ceramic green sheets having opposing internal electrode pairs formed on one surface are prepared, and at least the plurality of ceramic green sheets having the opposing internal electrode pairs are formed. The method for manufacturing a resistance element according to any one of claims 4 to 6, wherein the lamination is performed by partially interposing a plain ceramic green sheet therebetween.
抗素体と、 第１，第２の端面にそれぞれ引き出されており、かつ互
いの先端が対向するように抵抗素体内の同一高さ位置に
配置された第１，第２の内部電極と、 前記第１，第２の内部電極にそれぞれ接続されており、
かつ抵抗素体の第１，第２の端面に形成された第１，第
２の外部電極とを備え、 第１，第２の内部電極からなる対向内部電極対が抵抗素
体内において厚み方向に複数形成されており、かつ少な
くとも１つの厚み方向に隣接する対向内部電極対間の抵
抗素体層の厚みが、他の厚み方向に隣接する対向内部電
極対間の抵抗素体層の厚みと異ならされていることを特
徴とする、抵抗素子。8. A resistor element having first and second end faces opposed to each other, and the same element in the resistor element being drawn out from the first and second end faces, respectively, such that tips thereof are opposed to each other. A first and a second internal electrode arranged at a height position, and connected to the first and the second internal electrodes, respectively;
And a first and a second external electrode formed on the first and second end surfaces of the resistor element, and a pair of opposing internal electrodes composed of the first and second internal electrodes are formed in the resistor element in a thickness direction. If the thickness of the resistive element layer between a plurality of opposing internal electrode pairs adjacent to each other in at least one thickness direction is different from the thickness of the resistive element layer between the opposing internal electrode pairs adjacent in another thickness direction. A resistance element, characterized in that:
対間に配置される抵抗素体層の厚みが、残りの厚み方向
に隣接する対向内部電極対間の抵抗素体層の厚みと異な
らされている、請求項８に記載の抵抗素子。9. If the thickness of the resistor element layer arranged between one pair of opposing internal electrodes adjacent in one thickness direction is different from the thickness of the resistor element layer between the pair of opposing internal electrodes adjacent in the remaining thickness direction. The resistance element according to claim 8, wherein the resistance element is formed.
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09179198A JP3214440B2 (en) | 1998-04-03 | 1998-04-03 | Method of manufacturing resistance element and resistance element |
| TW088101426A TW412755B (en) | 1998-02-10 | 1999-01-28 | Resistor elements and methods of producing same |
| DE19904727A DE19904727B4 (en) | 1998-02-10 | 1999-02-05 | Resistance elements and methods of making same |
| DE19964532A DE19964532B4 (en) | 1998-02-10 | 1999-02-05 | Resistance elements and methods of making same |
| CNB991006011A CN1149589C (en) | 1998-02-10 | 1999-02-08 | Resistor elements and methods of producing same |
| KR1019990004243A KR100307804B1 (en) | 1998-02-10 | 1999-02-08 | Resistor elements and methods of producing same |
| US09/248,366 US6078250A (en) | 1998-02-10 | 1999-02-08 | Resistor elements and methods of producing same |
| US09/521,584 US6498068B1 (en) | 1998-02-10 | 2000-03-09 | Methods of producing resistor elements |
| US10/232,437 US6605856B2 (en) | 1998-02-10 | 2002-08-29 | Thermister chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09179198A JP3214440B2 (en) | 1998-04-03 | 1998-04-03 | Method of manufacturing resistance element and resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11288806A JPH11288806A (en) | 1999-10-19 |
| JP3214440B2 true JP3214440B2 (en) | 2001-10-02 |
Family
ID=14036441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09179198A Expired - Lifetime JP3214440B2 (en) | 1998-02-10 | 1998-04-03 | Method of manufacturing resistance element and resistance element |
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| Country | Link |
|---|---|
| JP (1) | JP3214440B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6497396B2 (en) * | 2014-12-15 | 2019-04-10 | 株式会社村田製作所 | Manufacturing method of electronic parts |
-
1998
- 1998-04-03 JP JP09179198A patent/JP3214440B2/en not_active Expired - Lifetime
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