JP3210933B2 - Magnetic sensing element and method of manufacturing the same - Google Patents
Magnetic sensing element and method of manufacturing the sameInfo
- Publication number
- JP3210933B2 JP3210933B2 JP24486096A JP24486096A JP3210933B2 JP 3210933 B2 JP3210933 B2 JP 3210933B2 JP 24486096 A JP24486096 A JP 24486096A JP 24486096 A JP24486096 A JP 24486096A JP 3210933 B2 JP3210933 B2 JP 3210933B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- sensing element
- layer
- film
- magnetic sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は外部磁気に応じたイ
ンピーダンスを呈する磁気検出素子に関するもので，特
に各種磁気ヘッド，磁気センサ一として有用な磁気検出
素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensing element exhibiting impedance according to external magnetism, and more particularly to a magnetic sensing element useful as various magnetic heads and magnetic sensors.
【０００２】[0002]
【従来の技術】近年，電予機器の小型・高性能化が急速
に進み，特にコンピューター関連機器ではハードディス
クの小型・大容量化に伴って従来の磁束密度の変化を用
いたヘッドに代わり，磁気抵抗効果を利用したヘッド
（ＭＲヘッド）が読みとりに使用されつつある。しか
し，さらなる記録密度の増大にはこのＭＲヘッドでも十
分ではなく，外部磁界の変化に対してさらに電気特性の
変化の大きいヘッド用の素子が望まれている。2. Description of the Related Art In recent years, miniaturization and high performance of electronic propulsion devices have been rapidly progressing. A head utilizing the resistance effect (MR head) is being used for reading. However, this MR head is not enough to further increase the recording density, and there is a demand for an element for a head in which the electrical characteristics change more greatly with the change in the external magnetic field.
【０００３】また，地磁気の測定，脳内磁界の測定等，
微小磁界の測定・検出を行なう場合にもＭＲヘッドでは
十分ではない。[0003] In addition, measurement of geomagnetism, measurement of magnetic field in the brain, etc.
Even when measuring and detecting a minute magnetic field, an MR head is not sufficient.
【０００４】このような点に鑑みて，軟磁性線に高周波
電流を通電し，外部磁界の変動に応じた軟磁性線の抵
抗，及びインダクタンスの変化，すなわちインピーダン
スの変化として捕らえる磁気検出素子（「磁気インピー
ダンス素子」ともいわれる。）が提案されている（特開
平６−１７６９３０，特開平７−２４８３６５，電気学
会論文誌Ｅ１１６巻１号ｐ７（１９９６）など）。この
ような磁気検出素子は，外部磁界の変化に伴うインピー
ダンスの変化が大きく，センサー，ヘッドとして優れた
特徴を持つているが，磁界変化に伴うインピーダンスの
変化率（すなわち磁界感度）は１０％／Ｏｅの程度にと
どまるという欠点がある。In view of such a point, a high-frequency current is applied to the soft magnetic wire, and the resistance and inductance of the soft magnetic wire corresponding to the change of the external magnetic field are changed. (Also referred to as "magnetic impedance element") (JP-A-6-176930, JP-A-7-248365, Transactions of the Institute of Electrical Engineers of Japan, E116, Vol. 1, p7 (1996), etc.). Such a magnetic sensing element has a great change in impedance due to a change in an external magnetic field and has excellent characteristics as a sensor and a head. However, the rate of change in impedance (magnetic field sensitivity) due to a change in a magnetic field is 10% / There is a drawback that it is only Oe.
【０００５】このような欠点を改善するために，トラン
ジスタと軟磁性線を組み合わせて発振回路を構成し，Ｌ
Ｃ共振を利用することによって検出感度を向上させよう
とすることが提案されている（日本応用磁気学会誌，第
１９巻，４６９（１９９５）など）。しかし，この提案
による磁気検出素子は，能動部品を必要とするばかりで
なく，いくつかの抵抗器，コンデンサー，ダイオードな
どを必要とする。したがって，素子自体のコストアップ
は避けられないという欠点がある。In order to improve such a defect, an oscillation circuit is formed by combining a transistor and a soft magnetic wire.
It has been proposed to improve detection sensitivity by utilizing C resonance (Journal of the Japan Society of Applied Magnetics, Vol. 19, 469 (1995), etc.). However, the magnetic sensing element according to this proposal requires not only active components but also several resistors, capacitors, diodes, and the like. Therefore, there is a disadvantage that the cost of the element itself cannot be avoided.
【０００６】他方で，アモルファス金属磁性単層膜を磁
気検出素子として用いることが検討されている（内山
ほか，電気学会論文誌，１１５−Ａ，９４９（１９９
５））。このような磁気検出素子では，磁性膜に直接通
電を行うことにより外部磁界によりインピーダンスが変
化する小型の磁気センサを実現できる。しかしながらア
モルファス金属磁性膜はＣｕ，Ａｌ，Ａｇなど，導体線
路として−般に用いられる金属に比べ，電気抵抗が大き
いため，励磁が効率よく行えず，かつインピーダンス変
化率が小さくなるという欠点を有する。On the other hand, it has been studied to use an amorphous metal magnetic single-layer film as a magnetic sensing element (Uchiyama).
In addition, IEICE Transactions, 115-A, 949 (199)
5)). In such a magnetic detection element, a small-sized magnetic sensor whose impedance changes due to an external magnetic field can be realized by directly applying a current to the magnetic film. However, since the amorphous metal magnetic film has a higher electric resistance than metals generally used as a conductor line, such as Cu, Al, and Ag, it has a drawback that excitation cannot be performed efficiently and an impedance change rate is small.
【０００７】また，Ｃｕ膜を内包したストライプ状のパ
ーマロイスパッタ膜を磁気インピーダンス素子として用
いることが提案されている（千田他，電気学会マグネテ
ィックス研究会資料，ＭＡＧ−９５−１２６，９１（１
９９５）。さらに，−軸異方性を付与されたＣｏＳｉＢ
膜の間にＣｕ導電体層を挟んだ構造の磁気検出素子も提
案されている（森川他，日本応用磁気学会誌，２０，５
５３（１９９６））。これらの磁気検出素子では，その
インピーダンスの変化率が−５０〜＋１２０％程度を呈
するようなす外部印加磁界の変化範囲があるが，磁界感
度は−５〜＋１０％／Ｏｅ程度に留まり，また，磁気異
方性を制御しにくいという欠点がある。It has also been proposed to use a striped permalloy sputtered film containing a Cu film as a magnetic impedance element (Senda et al., Materials of the Institute of Magnetics, MAG-95-126, 91 (1)
995). Furthermore, CoSiB with -axis anisotropy
A magnetic sensing element having a structure in which a Cu conductor layer is sandwiched between films has also been proposed (Morikawa et al., Journal of the Japan Society of Applied Magnetics, 20, 5).
53 (1996)). In these magnetic sensing elements, there is a change range of the externally applied magnetic field such that the rate of change of the impedance exhibits about -50 to + 120%, but the magnetic field sensitivity remains at about -5 to + 10% / Oe. There is a disadvantage that it is difficult to control the anisotropy.
【０００８】[0008]
【発明が解決しようとする課題】上に述べた磁気検出素
子の等価回路は図１のような２端子回路となり，もっぱ
ら磁界の変化分をＺ＝Ｒ＋ｊωＬ（ωは素子に流す交流
電流の角周波数）の形のインピーダンスの変化として検
出している。このような磁気検出素子では数ＭＨｚ程度
の周波数帯域においては比透磁率がほとんど１に近いた
め，外部磁界に対するインダクタンス分Ｌの変化は小さ
い。しかし，外部磁界が異方性磁界の大きさと同じにな
るとき比透磁率が最大をとるという性質を利用して，外
部磁界の変化に対するインピーダンス変化分を大きくで
きる。ところが，数１０〜数１００ＭＨｚ程度の周波数
帯域では表皮効果の影響，及び渦電流損失の増大のため
に，素子自体のインピーダンスが増大し，相対的に外部
磁界の変化に対するインピーダンス変化分が小さくなる
という欠点がある。The equivalent circuit of the magnetic detecting element described above is a two-terminal circuit as shown in FIG. 1, and the change of the magnetic field is determined by Z = R + jωL (ω is the angular frequency of the alternating current flowing through the element). ) Is detected as a change in impedance. In such a magnetic detecting element, the relative permeability is almost close to 1 in a frequency band of about several MHz, so that the change of the inductance L with respect to the external magnetic field is small. However, by utilizing the property that the relative magnetic permeability becomes maximum when the external magnetic field becomes the same as the magnitude of the anisotropic magnetic field, the amount of impedance change with respect to the change of the external magnetic field can be increased. However, in the frequency band of about several tens to several hundreds MHz, the impedance of the element itself increases due to the effect of the skin effect and the increase of eddy current loss, and the impedance change relative to the change of the external magnetic field is relatively small. There are drawbacks.
【０００９】さらに，従来提案されてきた上記の軟磁性
線，または軟磁性薄膜を用いた磁気検出素子では接地導
体を持たないため，素子周辺に存在する他の回路要素や
配線等との間に種々の浮遊容量が発生するために動作が
不安定になりがちてあるという欠点がある。Furthermore, the magnetic sensing element using the above-described soft magnetic wire or soft magnetic thin film, which has been conventionally proposed, does not have a ground conductor, so that it is connected to other circuit elements, wiring, etc. existing around the element. There is a disadvantage that the operation tends to be unstable due to generation of various stray capacitances.
【００１０】さらには通電電流により発生される電界が
素子外部に存在する導体，あるいは誘電体のために乱さ
れやすく，動作が不安定になりがちであるという欠点が
ある。Further, there is a disadvantage that the electric field generated by the current flow is easily disturbed by the conductor or the dielectric existing outside the element, and the operation tends to be unstable.
【００１１】そこで，本発明の第１の技術的課題は，磁
性金属層，または磁性金属線に導体金属の役割を兼用さ
せるような構造の検出素子に比べ，直流電気抵抗を低減
させることができるため，より高感度の検出素子を実現
できる磁気検出素子及びその製造方法を提供することに
ある。Therefore, a first technical object of the present invention is to reduce the DC electric resistance as compared with a detection element having a structure in which a magnetic metal layer or a magnetic metal wire also serves as a conductor metal. Therefore, an object of the present invention is to provide a magnetic detection element capable of realizing a detection element with higher sensitivity and a method for manufacturing the same.
【００１２】また，本発明の第２の技術的課題は，渦電
流損失が低減でき，高周波帯域での磁気特性が改善され
る磁気検出素子及びその製造方法を提供することにあ
る。A second technical object of the present invention is to provide a magnetic sensing element capable of reducing eddy current loss and improving magnetic characteristics in a high frequency band, and a method of manufacturing the same.
【００１３】更に，本発明の第３の技術的課題は，大き
なインピ一ダンス変化率を有する磁気検出素子及びその
製造方法を提供することにある。Still another object of the present invention is to provide a magnetic sensing element having a large impedance change rate and a method of manufacturing the same.
【００１４】[0014]
【課題を解決するための手段】本発明者らは，ガラスセ
ラミック絶縁層を介しつつ，導電体層を内包し，かつＣ
ｏＮｂＺｒ膜，及びガラスセラミックス層と積層構造を
持たせたＣｏＮｂＺｒは磁気異方性を制御しやすく，か
つ磁歪が零近傍の膜を容易に得られることから，この種
の磁気検出素子として用いた場合，上記問題点の解決が
図れることを見出した。この磁気異方性の制御について
は，回転磁界中熱処理，あるいは静磁界中熱処理を施す
ことによって膜面内で等方的な異方性をもたせたり，あ
るいは一軸異方性をもたせることが容易にできる。Means for Solving the Problems The inventors of the present invention have included a conductor layer through a glass ceramic insulating layer,
An oNbZr film and CoNbZr having a laminated structure with a glass ceramic layer can easily control the magnetic anisotropy and easily obtain a film having a magnetostriction near zero. It was found that the above problems could be solved. Regarding the control of the magnetic anisotropy, it is easy to provide anisotropic or uniaxial anisotropy in the film surface by performing heat treatment in a rotating magnetic field or heat treatment in a static magnetic field. it can.
【００１５】また、本発明によれば、磁性層とこれに隣
接した導電層とを備え、磁気インピーダンス効果を利用
した磁気検出素子において，前記磁性層は，８０−８７
ａｔ％Ｃｏ−１０〜１７ａｔ％Ｎｂ−１〜６ａｔ％Ｚｒ
のＣｏ−Ｎｂ−Ｚｒ薄膜を含むことを特徴とする磁気検
出素子が得られる。According to the present invention, a magnetic layer and a conductive layer adjacent to the magnetic layer are provided , and the magnetic impedance effect is utilized.
In the magnetic sensing element described above, the magnetic layer is 80-87.
at% Co-10 to 17 at% Nb-1 to 6 at% Zr
A magnetic sensing element characterized by including the Co—Nb—Zr thin film of the present invention.
【００１６】また，本発明によれば，前記磁気検出素子
において導体層を含み，前記導体層は，Ｃｕ，Ａｇ，Ａ
ｌ，Ａｕの内の少なくとも一種から実質的になり，前記
Ｃｏ−Ｎｂ−Ｚｒ薄膜と，前記導体層とは，絶縁層を介
して互いに絶縁されていることを特徴とする磁気検出素
子が得られる。Further, according to the present invention, the magnetic sensing element includes a conductor layer, and the conductor layer includes Cu, Ag, A
a magnetic sensing element substantially consisting of at least one of l and Au, wherein the Co-Nb-Zr thin film and the conductor layer are insulated from each other via an insulating layer. .
【００１７】また，本発明によれば，前記いずれかの磁
気検出素子において，前記磁性層は，前記Ｃｏ−Ｎｂ−
Ｚｒ薄膜を複数絶縁膜を介して積層したものであること
を特徴とする磁気検出素子が得られる。According to the invention, in any one of the magnetic sensing elements, the magnetic layer may include the Co—Nb—
A magnetic sensing element characterized by stacking a plurality of Zr thin films via a plurality of insulating films is obtained.
【００１８】また，本発明によれば，前記いずれかの磁
気検出素子において，前記磁性層に，前記絶縁層を積層
してなり，前記絶縁層及び前記絶縁膜は，ＳｉＯ2 ，Ｓ
ｉ3Ｎ4 ，Ａｌ2 Ｏ3 ，ＡｌＮのうち少なくとも一種か
らなることを特徴とする磁気検出素子が得られる。Further, according to the present invention, in any one of the above magnetic sensing elements, the insulating layer is laminated on the magnetic layer, and the insulating layer and the insulating film are made of SiO 2 , S
A magnetic sensing element characterized by comprising at least one of i 3 N 4 , Al 2 O 3 and AlN is obtained.
【００１９】また、本発明によれば、導体層の周囲を絶
縁層を介して磁性層にて覆った磁気インピーダンス効果
を利用した磁気検出素子であって，前記磁性層は，８０
−８７ａｔ％Ｃｏ−１０〜１７ａｔ％Ｎｂ−１〜６ａｔ
％ＺｒのＣｏ−Ｎｂ−Ｚｒ薄膜を含むことを特徴とする
磁気検出素子が得られる。Further, according to the present invention, the magneto-impedance effect in which the periphery of the conductor layer is covered with the magnetic layer via the insulating layer is provided.
A magnetic detection element using the magnetic layer 80
-87 at% Co-10 to 17 at% Nb-1 to 6 at
A magnetic sensing element characterized by including a Co—Nb—Zr thin film of% Zr is obtained.
【００２０】また，本発明によれば，前記磁気検出素子
において，前記磁性層は，前記Ｃｏ−Ｎｂ−Ｚｒ薄膜を
複数絶縁膜を介して積層したものであることを特徴とす
る磁気検出素子が得られる。According to the present invention, in the magnetic sensing element, the magnetic layer is formed by laminating the Co—Nb—Zr thin films via a plurality of insulating films. can get.
【００２１】また，本発明によれば，前記いずれかの磁
気検出素子において，前記導体層は，Ｃｕ，Ａｇ，Ａ
ｌ，Ａｕの内の少なくとも一種から実質的になり，前記
絶縁層及び絶縁膜は，ＳｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ2 Ｏ
3 ，ＡｌＮのうち少なくとも一種から実質的になること
を特徴とする磁気検出素子が得られる。Further, according to the present invention, in any of the above magnetic sensing elements, the conductor layer may include Cu, Ag, A
l, essentially made from at least one of Au, said insulating layer and the insulating film, SiO 2, Si 3 N 4 , Al 2 O
3. A magnetic sensing element characterized by being substantially composed of at least one of AlN is obtained.
【００２２】また、本発明によれば、磁気インピーダン
ス効果を利用した磁気検出素子を製造する方法であっ
て、第１の磁性膜上に第１の絶縁膜を形成し，前記絶縁
膜上に導体層を形成し，前記導体層を両端部を残して覆
うように，第２の絶縁膜で覆い，前記第２の絶縁膜を前
記第１の磁性膜と閉磁路を構成するように，第２の磁性
膜で覆うことを含み，前記第１及び第２の磁性膜は，８
０−８７ａｔ％Ｃｏ−１０〜１７ａｔ％Ｎｂ−１〜６ａ
ｔ％ＺｒのＣｏ−Ｎｂ−Ｚｒ薄膜を含むことを特徴とす
る磁気検出素子の製造方法が得られる。Further, according to the present invention, the magnetic impedance
A method for manufacturing a magnetic sensing element utilizing the
Te, a first insulating film formed on the first magnetic layer, said conductive layer is formed on the insulating film, so as to cover, leaving both ends of said conductor layer is covered with the second insulating film, Covering the second insulating film with a second magnetic film so as to form a closed magnetic circuit with the first magnetic film, wherein the first and second magnetic films are
0-87 at% Co-10 to 17 at% Nb-1 to 6a
A method for manufacturing a magnetic sensing element, which includes a Co-Nb-Zr thin film of t% Zr, is obtained.
【００２３】また，本発明によれば，前記磁気検出素子
の製造方法において，前記磁性層は，前記Ｃｏ−Ｎｂ−
Ｚｒ薄膜を複数の第３の絶縁膜を介して積層したもので
あることを特徴とする磁気検出素子の製造方法が得られ
る。According to the invention, in the method of manufacturing the magnetic sensing element, the magnetic layer may be formed of the Co-Nb-
A method for manufacturing a magnetic sensing element, wherein a Zr thin film is laminated with a plurality of third insulating films interposed therebetween, is obtained.
【００２４】さらに，本発明によれば，前記磁気検出素
子の製造方法において，前記第１乃至第３の絶縁膜は，
夫々ＳｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ2 Ｏ3 ，ＡｌＮのうち
少なくとも一種からなり，前記導体層はＣｕ，Ａｇ，Ａ
ｌの内の少なくとも一種から実質的になることを特徴と
する磁気検出素子の製造方法が得られる。Further, according to the present invention, in the method for manufacturing a magnetic sensing element, the first to third insulating films may include:
The conductor layer is made of at least one of SiO 2 , Si 3 N 4 , Al 2 O 3 , and AlN.
and a method for manufacturing a magnetic sensing element characterized in that the method substantially consists of at least one of the above.
【００２５】ここで，本発明の組成の限定理由について
述べる。Ｃｏ−Ｎｂ−Ｚｒ薄膜の組成について，Ｃｏは
８７ａｔ％を越えると飽和磁化が大きくなる反面，磁歪
が大きくなり，軟磁気特性が劣化することから外部磁界
の変動に伴うインピーダンス変化率が小さくなり，さら
には非晶質の膜が得られにくくなるという弊害がある。
８０ａｔ％を下回ると飽和磁化が小さくなり，外部磁界
の変動に伴うインピーダンス変化率が小さくなる。Ｚｒ
はＣｏ−Ｎｂ−Ｚｒ膜を非晶質化する効果があり，概ね
１ａｔ％以上であることが必要である。しかし，６ａｔ
％を越えると磁歪が大きくなり，軟磁気特性の劣化を招
くので好ましくない。Ｎｂ量については１０〜１６ａｔ
％のときに零磁歪となるので最も好ましく，１０ａｔ％
を下回ると正の磁歪が大きくなり，軟磁気特性の劣化，
すなわちインピーダンス変化率劣化を招き，１６ａｔ％
を越えると飽和磁化の低下を招くので好ましくない。Here, the reasons for limiting the composition of the present invention will be described. Concerning the composition of the Co—Nb—Zr thin film, when Co exceeds 87 at%, the saturation magnetization increases, but the magnetostriction increases, and the soft magnetic characteristics deteriorate, so that the impedance change rate due to the fluctuation of the external magnetic field decreases. Further, there is a problem that it is difficult to obtain an amorphous film.
If it is less than 80 at%, the saturation magnetization becomes small, and the impedance change rate accompanying the fluctuation of the external magnetic field becomes small. Zr
Has the effect of making the Co—Nb—Zr film amorphous, and it is necessary that the content be approximately 1 at% or more. However, 6at
%, The magnetostriction is increased and the soft magnetic characteristics are deteriorated, which is not preferable. About 10-16at for Nb amount
% Is most preferable because zero magnetostriction occurs, and 10 at%
Below which the positive magnetostriction increases, the soft magnetic properties deteriorate,
That is, the impedance change rate is deteriorated, and
Exceeding the limit results in a decrease in the saturation magnetization, which is not preferable.
【００２６】このように，本発明においては，薄膜技術
を用いているため，微細加工が容易にできる点において
は，他の薄膜磁気検出素子と同様，線材を用いた磁気検
出素子よりも優れている。As described above, in the present invention, the thin-film technology is used, and therefore, it is superior to a magnetic sensing element using a wire, like other thin-film magnetic sensing elements, in that fine processing can be easily performed. I have.
【００２７】さらには，本発明においては，導電体層と
磁性体層とが電気的に絶縁されているため，渦電流損失
を低減することができるため，高周波帯域での特性に優
れる。Further, according to the present invention, since the conductor layer and the magnetic layer are electrically insulated, eddy current loss can be reduced, and the characteristics in a high frequency band are excellent.
【００２８】[0028]
【発明の実施の形態】以下，本発明の実施の形態につい
て説明する。Embodiments of the present invention will be described below.
【００２９】図１は本発明の実施の形態による磁気検出
素子を示す斜視図である。また，図２は図１の磁気検出
素子の横断面図，図３は図１の磁気検出素子の縦断面図
である。図１乃至図３を参照すると，磁気検出素子１
は，ガラス基板２上に形成された外郭をなす厚さ１μｍ
のＣｏ−Ｎｂ−Ｚｒ膜からなる磁性層１０と，中心部に
設けられた厚さ１μｍのＣｕ膜からなる導体層２０と，
磁性層１０及び導体層２０との間に介在する厚さ０．５
μｍのＳｉＯ2 膜からなる絶縁層３０とから構成されて
いる。磁性層１０は，ガラス基板２上の第１の磁性膜１
１と，上方に形成された第２の磁性膜からなる。絶縁層
３０は導体層２０と第１の磁性膜１１との間に介在する
第１の絶縁層３１と，導体層２０と第２の磁性膜１２と
の間に介在する第２の絶縁膜３２とからなり，第１の絶
縁膜３１と第２の絶縁膜３２とは，両側部分において，
密着している。FIG. 1 is a perspective view showing a magnetic sensing element according to an embodiment of the present invention. FIG. 2 is a transverse sectional view of the magnetic sensing element of FIG. 1, and FIG. 3 is a longitudinal sectional view of the magnetic sensing element of FIG. Referring to FIG. 1 to FIG.
Is a 1 μm-thick outer shell formed on the glass substrate 2
A magnetic layer 10 made of a Co—Nb—Zr film and a conductor layer 20 made of a Cu film having a thickness of 1 μm and provided at the center.
Thickness 0.5 between magnetic layer 10 and conductor layer 20
and an insulating layer 30 made of a μm SiO 2 film. The magnetic layer 10 is formed on the first magnetic film 1 on the glass substrate 2.
1 and a second magnetic film formed above. The insulating layer 30 includes a first insulating layer 31 interposed between the conductor layer 20 and the first magnetic film 11, and a second insulating film 32 interposed between the conductor layer 20 and the second magnetic film 12. The first insulating film 31 and the second insulating film 32 are
Closely adhered.
【００３０】次に本発明の実施の形態による磁気検出素
子の製造の具体例について説明する。Next, a specific example of manufacturing the magnetic sensing element according to the embodiment of the present invention will be described.
【００３１】（本発明試料１〜１０，及び比較試料１〜
５）図４は本発明の実施の形態による磁気検出素子の製
造工程を順に示す図である。図４を参照して，高周波マ
グネトロンスパッタリング等により図１乃至図３に示す
構造の磁気検出素子を厚さ１ｍｍのガラス基板上に作製
した。作製手順は次の通りである。なお，Ｃｏ−Ｎｂ−
Ｚｒ膜の製膜にあたっては種々の組成のＣｏ−Ｎｂ−Ｚ
ｒ薄膜を得るために数種類の組成のＣｏ−Ｎｂ−Ｚｒ合
金ターゲット，ならびにＮｂペレット，Ｚｒペレットを
用いた。Ｃｏ−Ｎｂ−Ｚｒ膜の組成はすべてＥＰＭＡで
分析した。(Samples 1 to 10 of the present invention and Comparative samples 1 to
5) FIG. 4 is a view sequentially showing the steps of manufacturing the magnetic sensing element according to the embodiment of the present invention. Referring to FIG. 4, a magnetic sensing element having the structure shown in FIGS. 1 to 3 was fabricated on a glass substrate having a thickness of 1 mm by high-frequency magnetron sputtering or the like. The fabrication procedure is as follows. Note that Co-Nb-
In forming the Zr film, various compositions of Co-Nb-Z
In order to obtain an r thin film, several types of Co—Nb—Zr alloy targets, Nb pellets, and Zr pellets were used. All compositions of the Co—Nb—Zr film were analyzed by EPMA.
【００３２】まず，図４（ａ）に示すような，縦横が１
０ｍｍ×２０ｍｍのガラス基板２上に，マスクを施し，
図４（ｂ）に示すように，幅４ｍｍ，長さ１４ｍｍ，厚
さ１μｍＣｏ−Ｎｂ−Ｚｒ膜の第１の磁性膜１１をスパ
ッタにより製膜した。First, as shown in FIG.
A mask is applied on a glass substrate 2 of 0 mm × 20 mm,
As shown in FIG. 4B, a first magnetic film 11 of a Co-Nb-Zr film having a width of 4 mm, a length of 14 mm, and a thickness of 1 μm was formed by sputtering.
【００３３】次に，図４（ｃ）に示すように，マスクを
用いて，幅３ｍｍ，長さ１６ｍｍ，厚さ０．５μｍのＳ
ｉＯ2 膜の第１の絶縁膜３１をＲＦマグネトロンスパッ
タリングにより製膜した。更に，図４（ｄ）に示すよう
に，第１の絶縁膜３１上に，第１の絶縁膜３１の両端よ
りもさらに長さ方向に延在して，幅２ｍｍ，長さ２０ｍ
ｍで，厚さ１μｍのＣｕ膜からなる導体層２０を製膜し
た。次に，図４（ｅ）に示すように，導体層２０の中央
部を覆い，第１の絶縁膜３１と重なるように，幅３ｍ
ｍ，長さ１６ｍｍ，厚さ０．５μｍのＳｉＯ2 膜からな
る第２の絶縁膜３２を製膜した。続いて，図４（ｆ）に
示すように，第２の絶縁膜を覆うように，幅４ｍｍ，長
さ１４ｍｍ，厚さ１μｍのＣｏ−Ｎｂ−Ｚｒ膜からなる
第２の磁性膜１２を製膜し，磁気検出素子を得た。試作
した磁気検出素子１の大きさはＣｏ−Ｎｂ−Ｚｒ膜の長
手方向で１４ｍｍ，幅が４ｍｍ，電極Ｃｕの長手方向で
２０ｍｍ，幅で２ｍｍである。この素子を５．０×10-6
Ｔｏｒｒ以下，Ｈex＝５００Ｏｅの真空・回転磁界中で
４００℃，２時間熱処理し，製膜中に導入された異方性
を緩和した後，同条件の真空・静磁界中で熱処理し，素
子の幅方向一軸磁気異方性を導入した。Next, as shown in FIG. 4C, a mask having a width of 3 mm, a length of 16 mm, and a thickness of 0.5 μm is formed using a mask.
A first insulating film 31 of an iO 2 film was formed by RF magnetron sputtering. Further, as shown in FIG. 4D, the first insulating film 31 extends further in the length direction than both ends of the first insulating film 31 to have a width of 2 mm and a length of 20 m.
m, a conductive layer 20 made of a Cu film having a thickness of 1 μm was formed. Next, as shown in FIG. 4 (e), the central part of the conductor layer 20 is covered with a width of 3 m so as to overlap the first insulating film 31.
A second insulating film 32 made of a SiO 2 film having a thickness of m, 16 mm in length, and 0.5 μm in thickness was formed. Subsequently, as shown in FIG. 4F, a second magnetic film 12 made of a Co—Nb—Zr film having a width of 4 mm, a length of 14 mm, and a thickness of 1 μm is formed so as to cover the second insulating film. The film was obtained to obtain a magnetic sensing element. The size of the magnetic sensing element 1 manufactured as a prototype is 14 mm in the longitudinal direction of the Co—Nb—Zr film, 4 mm in width, 20 mm in the longitudinal direction of the electrode Cu, and 2 mm in width. This element is 5.0 × 10 -6
Heat treatment at 400 ° C. for 2 hours in a vacuum and rotating magnetic field of Hex = 500 Oe at Torr or less to relax the anisotropy introduced during the film formation, and then heat treatment in a vacuum and static magnetic field under the same conditions. Uniaxial magnetic anisotropy in the width direction was introduced.
【００３４】次いで，この素子の導体層２０の両端部を
端子として，１０ＭＨｚの通電電流を流したときのイン
ピーダンスのバイアス磁界依存性を測定した。また，イ
ンダクタンス変化率，ならびにＥＰＭＡによる組成分析
の結果を下記表１に示す。下記表１の試料１の場合のバ
イアス磁界依存性のグラフを一例として図５に示す。下
記表１でＮｏ．１〜１０の試料は本発明の請求範囲内の
組成である。また，Ｎｏ．１１〜１５の試料は本発明の
範囲外の組成で比較例である。Next, the dependence of the impedance on the bias magnetic field when a current of 10 MHz was passed was measured using both ends of the conductor layer 20 of the device as terminals. Table 1 below shows the inductance change rate and the results of composition analysis by EPMA. FIG. 5 shows, as an example, a graph of the bias magnetic field dependence in the case of Sample 1 in Table 1 below. In Table 1 below, No. Samples 1 to 10 have compositions within the scope of the present invention. No. Samples 11 to 15 are comparative examples with compositions outside the scope of the present invention.
【００３５】（比較試料６）比較試料６として，厚さ１
ｍｍのガラス基板上に膜厚２μｍ，長手方向１４ｍｍ，
幅４ｍｍのＣｏ−Ｎｂ−Ｚｒ膜のみを製膜した。さらに
本発明試料１〜１０と同様の方法で磁場中熱処理を施
し，磁気検出素子とした。この素子に１０ＭＨｚの電流
を直接流したときのインピーダンスのバイアス磁界依存
性を測定したところ，インピーダンス変化率は３０％／
７Ｏｅ，磁界感度は４．３％／Ｏｅであった。また，膜
組成は８３．８ａｔ％Ｃｏ−１３．３ａｔ％Ｎｂ−２．
９ａｔ％Ｚｒであった。この場合と，本発明試料２とを
比較すれば，図１の構造のように磁性層とは別に導体層
を持つ磁気検出素子の優位性は明らかである。(Comparative Sample 6) As Comparative Sample 6, a thickness of 1
on a 2 mm glass substrate, 14 mm in the longitudinal direction,
Only a Co-Nb-Zr film having a width of 4 mm was formed. Further, a heat treatment in a magnetic field was performed in the same manner as in Samples 1 to 10 of the present invention to obtain a magnetic detection element. When the bias magnetic field dependency of the impedance when a current of 10 MHz was directly passed through this element was measured, the impedance change rate was 30% /
7 Oe, the magnetic field sensitivity was 4.3% / Oe. The film composition was 83.8 at% Co-13.3 at% Nb-2.
9 at% Zr. When this case is compared with the sample 2 of the present invention, the superiority of the magnetic sensing element having a conductor layer separately from the magnetic layer as in the structure of FIG. 1 is apparent.
【００３６】（比較試料７）比較試料７として図１乃至
図３に示した構造の磁気検出素子のＳｉＯ2 膜からなる
絶縁層３０を除き，ガラス基板上にＣｕの導体層２０，
Ｃｏ−Ｎｂ−Ｚｒ膜からなる磁性層１０のみを製膜した
磁気検出素子を得た。さらに，本発明試料１〜１０と同
様の方法で磁場中熱処理を施した。この試料に本発明試
料１〜１０と同様に，１０ＭＨｚの通電電流を流したと
きのインピーダンスの磁界依存性を調べたところ，イン
ピーダンス変化率は，５０％／９Ｏｅ，磁界感度は約６
％／Ｏｅであった。また，膜組成は８３．３ａｔ％Ｃｏ
−１３．８ａｔ％Ｎｂ−２．９ａｔ％Ｚｒであった。こ
の場合と本発明試料３とを比較すれば，図１乃至図３の
構造のように磁性層と導体層との間に絶縁体層を持つ磁
気検出素子の優位性は明らかである。(Comparative Sample 7) As Comparative Sample 7, a Cu conductor layer 20 and a Cu conductive layer 20 were formed on a glass substrate, except for the insulating layer 30 made of the SiO 2 film of the magnetic sensor having the structure shown in FIGS.
A magnetic sensing element in which only the magnetic layer 10 made of a Co-Nb-Zr film was formed was obtained. Further, a heat treatment in a magnetic field was performed in the same manner as the samples 1 to 10 of the present invention. The magnetic field dependence of the impedance when a current of 10 MHz was applied to this sample was examined in the same manner as in Samples 1 to 10 of the present invention. The impedance change rate was 50% / 9 Oe, and the magnetic field sensitivity was about 6%.
% / Oe. The film composition was 83.3 at% Co.
-13.8 at% Nb-2.9 at% Zr. When this case is compared with the sample 3 of the present invention, the superiority of the magnetic sensing element having an insulator layer between the magnetic layer and the conductor layer as in the structure of FIGS. 1 to 3 is apparent.
【００３７】（比較試料８）比較試料８として，図１乃
至図３に示した構造の磁気検出素子のＣｏ−Ｎｂ−Ｚｒ
からなる磁性層に代え，磁性層としてパーマロイを製膜
したものの磁気インピーダンス特性を調べた。本発明試
料１〜１０と同様，10ＭＨｚの通電電流を流したときの
インピーダンスの磁界依存性を測定したところ，インピ
ーダンス変化率は４５％／９０ｅ，磁界感度は５％／Ｏ
ｅであった。(Comparative Sample 8) As Comparative Sample 8, the Co-Nb-Zr of the magnetic sensing element having the structure shown in FIGS.
The magnetic impedance characteristics of a permalloy film formed as a magnetic layer instead of the magnetic layer consisting of As in the case of Samples 1 to 10 of the present invention, when the magnetic field dependence of the impedance when a current of 10 MHz was applied was measured, the impedance change rate was 45% / 90e, and the magnetic field sensitivity was 5% / O.
e.
【００３８】（本発明試料１１）第２の実施の形態とし
て，図１乃至図３に示す構造を有する磁気検出素子で，
本発明試料１のＣｏ−Ｎｂ−Ｚｒ単層膜である第１の磁
性膜１１及び第２の磁性膜１２に代え，図６に示すよう
に，厚さ０．１μｍのＳｉＯ2 からなる第３の絶縁膜３
３を間に挟みながら厚さ０．２５μｍのＣｏ−Ｎｂ−Ｚ
ｒ膜からなる第３の磁性膜１３を４層積層した第１の磁
性膜１４及び第２の磁性膜からなる磁性層を備えた磁気
インピーダンス素子を得た。さらに，本発明試料１〜１
０と同様の方法で磁場中熱処理を施した。この導体層２
０に４０ＭＨｚの通電電流を流したときのインピーダン
ス，インダクタンス，抵抗の磁界依存性を測定したとこ
ろ，図６に示すようなインピーダンス，インダクタン
ス，抵抗の変化が見られた。このときのインビーダンス
変化率は１２％／８Ｏｅ，磁界感度は１５％／Ｏｅ，膜
組成は８４ａｔ％Ｃｏ−１２．８ｓｔ％Ｎｂ−３．２ａ
ｔ％Ｚｒであった。後に述する比較試料９と比べると高
周波域での特性に優れていることがわかる。(Sample 11 of the Present Invention) As a second embodiment, a magnetic sensing element having the structure shown in FIGS.
As shown in FIG. 6, instead of the first magnetic film 11 and the second magnetic film 12 which are the Co—Nb—Zr single-layer films of the sample 1 of the present invention, a third magnetic film made of SiO 2 having a thickness of 0.1 μm was used. Insulation film 3
0.25 μm Co-Nb-Z with 3 in between
A magnetic impedance element including a first magnetic film 14 in which four third magnetic films 13 made of an r film were stacked and a magnetic layer made of a second magnetic film was obtained. Furthermore, the present invention samples 1 to 1
A heat treatment in a magnetic field was performed in the same manner as in Example 1. This conductor layer 2
Measurement of the magnetic field dependence of the impedance, inductance and resistance when a current of 40 MHz was applied to 0 showed changes in the impedance, inductance and resistance as shown in FIG. At this time, the impedance change rate was 12% / 8 Oe, the magnetic field sensitivity was 15% / Oe, and the film composition was 84 at% Co-12.8 st% Nb-3.2a.
t% Zr. It can be seen that the characteristics in the high frequency range are superior to the comparative sample 9 described later.
【００３９】（比較試料９）本発明試料１に記載の磁気
検出素子に，本発明試料１１と同様，４０ＭＨｚの通電
電流を流したときのインピーダンス磁界依存性を測定し
たところ，インピーダンス変化率は８０％／８Ｏｅ，磁
界感度は１０％／Ｏｅであった。(Comparative Sample 9) As in the case of Sample 11 of the present invention, when the impedance magnetic field dependency was measured when a current of 40 MHz was applied to the magnetic sensing element described in Sample 1 of the present invention, the impedance change rate was 80%. % / 8 Oe, and the magnetic field sensitivity was 10% / Oe.
【００４０】（本発明試料１２）図１に示す構造の磁気
検出素子で，ＳｉＯ2 絶縁層に代え，Ｓｉ3 Ｎ4 を絶縁
層として同様の素子を得た。さらに，本発明試料１〜１
０と同様の方法で磁場中熱処理を施し，１０ＭＨｚの通
電電流を流したときのインピーダンス変化率を調べたと
ころ，１１０％／６．５Ｏｅ，磁界感度は１６．９／Ｏ
ｅであった。(Sample 12 of the Present Invention) A similar magnetic sensing element having the structure shown in FIG. 1 was obtained by using Si 3 N 4 as the insulating layer instead of the SiO 2 insulating layer. Furthermore, the present invention samples 1 to 1
A heat treatment in a magnetic field was performed in the same manner as in Example 0, and the impedance change rate when a current of 10 MHz was applied was examined. The result was 110% / 6.5 Oe, and the magnetic field sensitivity was 16.9 / O.
e.
【００４１】（本発明試料１３）図１に示す構造の磁気
検出素子で，ＳｉＯ2 絶縁層に代え，Ａｌ2 Ｏ3 膜を絶
縁層として同様の素子を得た。さらに，本発明試料１〜
１０と同様の方法で磁場中熱処理を施し，１０ＭＨｚの
通電電流を流したときのインピーダンス変化率を調べた
ところ，１１３％／６．７Ｏｅ，磁界感度は１６．９％
／Ｏｅであった。(Sample 13 of the Present Invention) A similar magnetic sensing element having the structure shown in FIG. 1 was obtained by using an Al 2 O 3 film as the insulating layer instead of the SiO 2 insulating layer. Furthermore, the present invention samples 1 to
Heat treatment in a magnetic field was performed in the same manner as in Example 10, and the rate of change in impedance when a 10-MHz current was passed was examined. The result was 113% / 6.7 Oe, and the magnetic field sensitivity was 16.9%.
/ Oe.
【００４２】（本発明試料１４）図１に示す構造の磁気
検出素子で，ＳｉＯ2 の絶縁層３０に代え，ＡｌＮ膜を
絶縁層として用いて同様の構造の素子を得た。さらに，
本発明試料１〜１０と同様の方法で磁場中熱処理を施
し，10ＭＨｚの通電電流を流したときのインピーダンス
変化率を調べたところ，１０３％／６．３Ｏｅ，磁界感
度は１６．３％／Ｏｅであった。(Sample 14 of the Present Invention) A magnetic sensor having the same structure as that shown in FIG. 1 was obtained by using an AlN film as an insulating layer instead of the insulating layer 30 of SiO 2 . further,
Heat treatment in a magnetic field was performed in the same manner as in Samples 1 to 10 of the present invention, and the rate of change in impedance when a current of 10 MHz was applied was examined. The result was 103% / 6.3 Oe and the magnetic field sensitivity was 16.3% / Oe. Met.
【００４３】[0043]
【表１】 [Table 1]
【００４４】[0044]
【発明の効果】以上，説明したように，本発明において
は，導体金属層を内包したＣｏ−Ｎｂ−Ｚｒアモルファ
ス金属磁性薄膜を磁気検出素子として，用いることによ
り，従来見られたような磁性金属層，または磁性金属線
に導体金属の役割を兼用させるような構造の検出素子に
比べ，直流電気抵抗を低減させることができるため，よ
り高感度の検出素子を実現できる。As described above, according to the present invention, by using a Co—Nb—Zr amorphous metal magnetic thin film including a conductor metal layer as a magnetic sensing element, a magnetic metal as conventionally seen can be obtained. Compared with a detection element having a structure in which a layer or a magnetic metal wire also serves as a conductor metal, the DC electric resistance can be reduced, so that a detection element with higher sensitivity can be realized.
【００４５】また，本発明においては，導体金属層とＣ
ｏ−Ｎｂ−Ｚｒアモルファス金属磁性薄膜との間にガラ
スセラミック絶縁層を持たせることにより，アモルフア
ス金属磁性薄膜にはバイアス磁界印加のための直流は流
れないので，渦電流損失が低減でき，絶縁層を持たない
場合よりも高周波帯域での磁気特性が改善される。In the present invention, the conductive metal layer and the C
By providing a glass-ceramic insulating layer between the o-Nb-Zr amorphous metal magnetic thin film, a direct current for applying a bias magnetic field does not flow through the amorphous metal magnetic thin film, so that eddy current loss can be reduced and the insulating layer can be reduced. The magnetic characteristics in the high frequency band are improved as compared with the case without the above.
【００４６】また，本発明においては，Ｃｏ−Ｎｂ−Ｚ
ｒ層を単層膜ではなく，ガラスセラミック層を介した積
層構造にすることにより，なお一層の高周波帯域化が可
能である。Further, in the present invention, Co-Nb-Z
If the r-layer is not a single-layer film but has a laminated structure via a glass ceramic layer, it is possible to further increase the high-frequency band.
【００４７】さらには，本発明においては，アモルファ
スＣｏ−Ｎｂ−Ｚｒ磁性金属層の組成を適切にすること
により，従来用いられてきたパーマロイ薄膜，Ｃｏ−Ｓ
ｉ−Ｂ薄膜などを用いた場合よりも大きなインピ一ダン
ス変化率を有する磁気検出素子を得ることができる。Further, in the present invention, by appropriately setting the composition of the amorphous Co—Nb—Zr magnetic metal layer, a permalloy thin film conventionally used, Co—S
It is possible to obtain a magnetic sensing element having a larger impedance change rate than when an i-B thin film or the like is used.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の実施の形態による磁気検出素子を示す
斜視図である。FIG. 1 is a perspective view showing a magnetic sensing element according to an embodiment of the present invention.
【図２】図１の磁気検出素子の横断面図である。FIG. 2 is a cross-sectional view of the magnetic sensing element of FIG.
【図３】図１の磁気検出素子の縦断面図である。FIG. 3 is a longitudinal sectional view of the magnetic sensor of FIG. 1;
【図４】（ａ）〜（ｆ）は図１の磁気検出素子の製造工
程を示す平面図である。4 (a) to 4 (f) are plan views showing manufacturing steps of the magnetic sensing element in FIG.
【図５】図１の磁気検出素子のインピーダンスの磁界依
存性を示す図である。FIG. 5 is a diagram showing the magnetic field dependence of the impedance of the magnetic detection element of FIG. 1;
【図６】本発明の他の実施の形態による磁気検出素子を
示す断面図である。FIG. 6 is a sectional view showing a magnetic sensing element according to another embodiment of the present invention.
【図７】図６の磁気検出素子（本発明試料１１）のＺ，
Ｌ，Ｒのバイアス磁場依存性を示す図である。FIG. 7 shows Z, Z of the magnetic detection element (sample 11 of the present invention) in FIG.
FIG. 6 is a diagram illustrating the bias magnetic field dependence of L and R.
１ 磁気検出素子 ２ ガラス基板 １０ 磁性層 １１，１４ 第１の磁性膜 １２ 第２の磁性膜 １３ 第３の磁性膜 ２０ 導体層 ３０ 絶縁層 ３１ 第１の絶縁膜 ３２ 第２の絶縁膜 ３３ 第３の絶縁膜 DESCRIPTION OF SYMBOLS 1 Magnetic detection element 2 Glass substrate 10 Magnetic layer 11, 14 First magnetic film 12 Second magnetic film 13 Third magnetic film 20 Conductive layer 30 Insulating layer 31 First insulating film 32 Second insulating film 33 First 3 insulating film
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−270321（ＪＰ，Ａ) 特開 平８−8473（ＪＰ，Ａ) 特開 平６−163257（ＪＰ，Ａ) 特開 平６−334237（ＪＰ，Ａ) 特開 平８−78757（ＪＰ，Ａ) 特開 平８−213238（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01R 33/00 - 33/18 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-9-270321 (JP, A) JP-A-8-8473 (JP, A) JP-A-6-163257 (JP, A) JP-A-6-163257 334237 (JP, A) JP-A-8-78757 (JP, A) JP-A-8-213238 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G01R 33/00-33 / 18
Claims (10)
え、磁気インピーダンス効果を利用した磁気検出素子に
おいて，前記磁性層は，８０−８７ａｔ％Ｃｏ−１０〜
１７ａｔ％Ｎｂ−１〜６ａｔ％ＺｒのＣｏ−Ｎｂ−Ｚｒ
薄膜を含むことを特徴とする磁気検出素子。1. A includes a magnetic layer and a conductive layer adjacent thereto, the magnetic sensing element using a magnetic impedance effect, said magnetic layer, 80-87at% Co-10~
17 at% Nb-1 to 6 at% Zr Co-Nb-Zr
A magnetic sensing element comprising a thin film.
体層を含み，前記導体層は，Ｃｕ，Ａｇ，Ａｌ，Ａｕの
内の少なくとも一種から実質的になり，前記Ｃｏ−Ｎｂ
−Ｚｒ薄膜と，前記導体層とは，絶縁層を介して互いに
絶縁されていることを特徴とする磁気検出素子。2. The magnetic sensing element according to claim 1, further comprising a conductor layer, wherein said conductor layer is substantially made of at least one of Cu, Ag, Al, and Au, and said Co-Nb
-A magnetic sensing element, wherein the Zr thin film and the conductor layer are insulated from each other via an insulating layer.
いて，前記磁性層は，前記Ｃｏ−Ｎｂ−Ｚｒ薄膜を複数
絶縁膜を介して積層したものであることを特徴とする磁
気検出素子。3. The magnetic sensing element according to claim 1, wherein the magnetic layer is formed by laminating the Co—Nb—Zr thin films via a plurality of insulating films.
いて，前記磁性層に，前記絶縁層を積層してなり，前記
絶縁層及び前記絶縁膜は，ＳｉＯ2 ，Ｓｉ3Ｎ4 ，Ａｌ
2 Ｏ3 ，ＡｌＮのうち少なくとも一種からなることを特
徴とする磁気検出素子。4. The magnetic sensing element according to claim 2, wherein the insulating layer is laminated on the magnetic layer, and the insulating layer and the insulating film are made of SiO 2 , Si 3 N 4 , Al.
A magnetic sensing element comprising at least one of 2 O 3 and AlN.
て覆った磁気インピーダンス効果を利用した磁気検出素
子であって，前記磁性層は，８０−８７ａｔ％Ｃｏ−１
０〜１７ａｔ％Ｎｂ−１〜６ａｔ％ＺｒのＣｏ−Ｎｂ−
Ｚｒ薄膜を含むことを特徴とする磁気検出素子。5. A magnetic sensing element utilizing a magnetic impedance effect in which the periphery of a conductor layer is covered with a magnetic layer via an insulating layer, wherein the magnetic layer is 80-87 at% Co-1.
0 to 17 at% Nb-1 to 6 at% Zr Co-Nb-
A magnetic sensing element comprising a Zr thin film.
前記磁性層は，前記Ｃｏ−Ｎｂ−Ｚｒ薄膜を複数絶縁膜
を介して積層したものであることを特徴とする磁気検出
素子。6. The magnetic sensing element according to claim 5, wherein
The magnetic sensing element according to claim 1, wherein the magnetic layer is formed by laminating the Co-Nb-Zr thin films via a plurality of insulating films.
いて，前記導体層は，Ｃｕ，Ａｇ，Ａｌの内の少なくと
も一種から実質的になり，前記絶縁層及び絶縁膜は，Ｓ
ｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ2 Ｏ3 ，ＡｌＮのうち少なく
とも一種から実質的になることを特徴とする磁気検出素
子。7. The magnetic sensing element according to claim 5, wherein the conductor layer is substantially made of at least one of Cu, Ag, and Al, and the insulating layer and the insulating film are
iO 2, Si 3 N 4, Al 2 O 3, the magnetic detecting device characterized by consisting essentially of at least one of AlN.
検出素子を製造する方法であって、第１の磁性膜上に第
１の絶縁膜を形成し，前記絶縁膜上に導体層を形成し，
前記導体層を両端部を残して覆うように，第２の絶縁膜
で覆い，前記第２の絶縁膜を前記第１の磁性膜と閉磁路
を構成するように，第２の磁性膜で覆うことを含み，前
記第１及び第２の磁性膜は，８０−８７ａｔ％Ｃｏ−１
０〜１７ａｔ％Ｎｂ−１〜６ａｔ％ＺｒのＣｏ−Ｎｂ−
Ｚｒ薄膜を含むことを特徴とする磁気検出素子の製造方
法。8. A magnet utilizing the magneto-impedance effect.
A method for manufacturing a detection element , comprising: forming a first insulating film on a first magnetic film; forming a conductor layer on the insulating film;
The conductive layer is covered with a second insulating film so as to cover both ends, and the second insulating film is covered with a second magnetic film so as to form a closed magnetic circuit with the first magnetic film. Wherein the first and second magnetic films are 80-87 at% Co-1
0 to 17 at% Nb-1 to 6 at% Zr Co-Nb-
A method for manufacturing a magnetic sensing element, comprising a Zr thin film.
において，前記磁性層は，前記Ｃｏ−Ｎｂ−Ｚｒ薄膜を
複数の第３の絶縁膜を介して積層したものであることを
特徴とする磁気検出素子の製造方法。9. The method for manufacturing a magnetic sensing element according to claim 8, wherein the magnetic layer is formed by laminating the Co—Nb—Zr thin film via a plurality of third insulating films. Of manufacturing a magnetic sensing element.
製造方法において，前記第１乃至第３の絶縁膜は，夫々
ＳｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ2 Ｏ3 ，ＡｌＮのうち少な
くとも一種からなり，前記導体層はＣｕ，Ａｇ，Ａｌ，
Ａｕの内の少なくとも一種から実質的になることを特徴
とする磁気検出素子の製造方法。10. The method for manufacturing a magnetic sensing element according to claim 8, wherein the first to third insulating films are each formed of at least one of SiO 2 , Si 3 N 4 , Al 2 O 3 , and AlN. And the conductor layer is made of Cu, Ag, Al,
A method for manufacturing a magnetic sensing element, comprising substantially at least one of Au.
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24486096A JP3210933B2 (en) | 1996-09-17 | 1996-09-17 | Magnetic sensing element and method of manufacturing the same |
| US08/929,558 US6069475A (en) | 1996-09-17 | 1997-09-15 | Magnetic sensor utilizing impedance variation of a soft magnetic element in dependence upon a magnetic field strength and a method of manufacturing the same |
| CN97121378A CN1110794C (en) | 1996-09-17 | 1997-09-16 | Magnetic sensor utilizing impedance variation of soft magnetic element in dependence upon magnetic field strength and method of manufacturing the same |
| TW086113435A TW344799B (en) | 1996-09-17 | 1997-09-17 | Magnetic sensor utilizing impedance variation of a soft magnetic element in dependence upon a magnetic field strength and a method of manufacturing the same |
| DE69705095T DE69705095T2 (en) | 1996-09-17 | 1997-09-17 | Magneto-impedance sensor |
| SG9703445A SG82576A1 (en) | 1996-09-17 | 1997-09-17 | Magnetic sensor utilizing impedance variation of a soft magnetic element in dependence upon a magnetic field strength and a method of manufacturing the same |
| EP97116192A EP0831335B1 (en) | 1996-09-17 | 1997-09-17 | Magneto-Impedance Sensor |
| SG9906444A SG89311A1 (en) | 1996-09-17 | 1997-09-17 | Magnetic sensor utilizing impedance variation of a soft magnetic element in dependence upon a magnetic field strength and a method of manufacturing the same |
| EP99115496A EP0965851B1 (en) | 1996-09-17 | 1997-09-17 | Magneto-Impedance sensor |
| DE69714613T DE69714613T2 (en) | 1996-09-17 | 1997-09-17 | Magneto-impedance sensor |
| MYPI97004323A MY130911A (en) | 1996-09-17 | 1997-09-17 | Magneto-impedance sensor |
| HK98104084A HK1004822A1 (en) | 1996-09-17 | 1998-05-12 | Magneto-impedance sensor |
| US09/484,315 US6255813B1 (en) | 1996-09-17 | 2000-01-18 | Magnetic sensor comprising a soft magnetic thin film element |
| CN02132192A CN1432998A (en) | 1996-09-17 | 2002-08-26 | Magnetic sensor based on the impedance of soft magnetic element varying with field strength and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24486096A JP3210933B2 (en) | 1996-09-17 | 1996-09-17 | Magnetic sensing element and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1090380A JPH1090380A (en) | 1998-04-10 |
| JP3210933B2 true JP3210933B2 (en) | 2001-09-25 |
Family
ID=17125074
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24486096A Expired - Lifetime JP3210933B2 (en) | 1996-09-17 | 1996-09-17 | Magnetic sensing element and method of manufacturing the same |
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| Country | Link |
|---|---|
| JP (1) | JP3210933B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008088021A1 (en) | 2007-01-17 | 2008-07-24 | Fujikura Ltd. | Magnetic sensor element and method for manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270919A (en) * | 2001-03-12 | 2002-09-20 | Toyota Central Res & Dev Lab Inc | Laminated magnetic field sensor |
| JP7203490B2 (en) * | 2017-09-29 | 2023-01-13 | 昭和電工株式会社 | Magnetic sensor assembly and magnetic sensor assembly manufacturing method |
-
1996
- 1996-09-17 JP JP24486096A patent/JP3210933B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008088021A1 (en) | 2007-01-17 | 2008-07-24 | Fujikura Ltd. | Magnetic sensor element and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1090380A (en) | 1998-04-10 |
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