JP3207773B2 - Compound semiconductor light emitting device and method of manufacturing the same - Google Patents
Compound semiconductor light emitting device and method of manufacturing the sameInfo
- Publication number
- JP3207773B2 JP3207773B2 JP32855896A JP32855896A JP3207773B2 JP 3207773 B2 JP3207773 B2 JP 3207773B2 JP 32855896 A JP32855896 A JP 32855896A JP 32855896 A JP32855896 A JP 32855896A JP 3207773 B2 JP3207773 B2 JP 3207773B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- electrode
- forming
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、化合物半導体層か
ら光を取り出す化合物半導体発光素子に関し、特に透明
電極を利用した化合物半導体発光素子及びその製造方法
に関する。The present invention relates to a compound semiconductor light emitting device for extracting light from a compound semiconductor layer, and more particularly to a compound semiconductor light emitting device using a transparent electrode and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】以前より、半導体発光素子の開発が盛ん
に行われているが、青色や緑色などの発光強度の高い色
を発光させるのがなかなか困難であった。そこで最近、
ＧａＮ、ＩｎＧａＮ、ＧａＡｌＮ等のＧａＮ系化合物半
導体材料を用いた発光素子が、青色発光ダイオード（Ｌ
ＥＤ）やレーザダイオード（ＬＤ）として注目されてき
た。2. Description of the Related Art Semiconductor light emitting devices have been actively developed for some time, but it has been very difficult to emit light having a high light emission intensity such as blue or green. So recently,
A light-emitting element using a GaN-based compound semiconductor material such as GaN, InGaN, and GaAlN is a blue light-emitting diode (L
ED) and laser diodes (LD).
【０００３】このＧａＮ系化合物半導体発光素子は、サ
ファイア基板上に化合物半導体層を成長させる。サファ
イア基板は絶縁性基板であるため、ＧａＡｓ等を用いた
発光素子のように基板側に電極を設けることができな
い。そこで、化合物半導体成長層側にＰ側電極、Ｎ側電
極を共に形成する必要がある。さらに、サファイア基板
が発光波長に対して透光性があるため、サファイア基板
を上、電極側を下にしてマウントし、サファイア基板側
から光を取り出すことが多い。In this GaN-based compound semiconductor light emitting device, a compound semiconductor layer is grown on a sapphire substrate. Since the sapphire substrate is an insulating substrate, an electrode cannot be provided on the substrate side unlike a light emitting element using GaAs or the like. Therefore, it is necessary to form both the P-side electrode and the N-side electrode on the compound semiconductor growth layer side. Furthermore, since the sapphire substrate has a light-transmitting property with respect to the emission wavelength, the sapphire substrate is often mounted with the electrode side down and light is extracted from the sapphire substrate side.
【０００４】図１２は、従来のＧａＮ系化合物半導体発
光素子の断面構造図である。サファイア基板１の上に、
電極９，１７が下に向けられている。サファイア基板１
の下にはＧａＮバッファ層３、ｎ型ＧａＮ層５、ｐ型Ｇ
ａＮ層７が結晶成長している。ｐ型ＧａＮ層７の一部が
エッチング除去されて露出したｎ型ＧａＮ層５にＮ側電
極９が、ｐ型ＧａＮ層７にＰ側電極１７が形成されてい
る。これらＰ側電極１７とＮ側電極９が、リードフレー
ム５３の上に銀ペースト等の導電性接着剤料５５でマウ
ントされている。FIG. 12 is a sectional structural view of a conventional GaN-based compound semiconductor light emitting device. On the sapphire substrate 1,
The electrodes 9, 17 are facing down. Sapphire substrate 1
Below the GaN buffer layer 3, the n-type GaN layer 5, the p-type G
The aN layer 7 has grown. An N-side electrode 9 is formed on the n-type GaN layer 5, which is exposed by partially removing the p-type GaN layer 7, and a P-side electrode 17 is formed on the p-type GaN layer 7. The P-side electrode 17 and the N-side electrode 9 are mounted on a lead frame 53 with a conductive adhesive material 55 such as a silver paste.
【０００５】このような構造のＧａＮ系化合物半導体発
光素子では、図のようにｎ型ＧａＮ層５を介してｐ型Ｇ
ａＮ層７からＮ側電極９へ向けて電流が流れ、ｎ型Ｇａ
Ｎ層５とｐ型ＧａＮ層７との接合面で発光した光が、サ
ファイア基板１を通して取り出される。In a GaN-based compound semiconductor light-emitting device having such a structure, as shown in FIG.
A current flows from the aN layer 7 to the N-side electrode 9 and the n-type Ga
Light emitted at the junction between the N layer 5 and the p-type GaN layer 7 is extracted through the sapphire substrate 1.
【０００６】一方、ＧａＡｓ、ＡｌＧａＡｓ、ＡｌＧａ
ＩｎＰ等のＧａＡｓ系化合物半導体材料を用いた発光素
子も、赤色や緑色系の発光ダイオードとして多用されて
いる。このＧａＡｓ系化合物半導体発光素子は、ＧａＡ
ｓ基板上に複数層のＡｌＧａＩｎＰ層を積層させ、Ｐ側
電極あるいはＮ側電極の一方をＡｌＧａＩｎＰ層側に、
他方をＧａＡｓ基板裏面に形成する。On the other hand, GaAs, AlGaAs, AlGa
Light emitting devices using a GaAs compound semiconductor material such as InP are also widely used as red or green light emitting diodes. This GaAs-based compound semiconductor light emitting device is composed of GaAs
A plurality of AlGaInP layers are stacked on an s substrate, and one of a P-side electrode and an N-side electrode is placed on the AlGaInP layer side.
The other is formed on the back surface of the GaAs substrate.
【０００７】活性層で発光した光を、電極で遮られるこ
となくＡｌＧａＩｎＰ層側から取り出すために、電流を
拡散して活性層へ注入するための電流拡散層が設けられ
ている。In order to extract light emitted from the active layer from the AlGaInP layer side without being blocked by the electrodes, a current diffusion layer for diffusing current and injecting the current into the active layer is provided.
【０００８】図１３は、従来のＧａＡｓ系化合物半導体
発光素子の断面構造図である。ｎ型ＧａＡｓ基板３１の
上にｎ型ＧａＡｓバッファ層３３、ｎ型ＡｌＧａＩｎＰ
クラッド層３５、ＡｌＧａＩｎＰ活性層３７、ｐ型Ａｌ
ＧａＩｎＰクラッド層３９、ｐ型ＡｌＧａＡｓ電流拡散
層５７、ｐ型ＧａＡｓコンタクト層４３が成長してい
る。ｐ型ＧａＡｓコンタクト層４３の上にＰ側電極４９
が、ｎ型ＧａＡｓ基板３１の裏面にＮ側電極５１が形成
されている。FIG. 13 is a sectional view of a conventional GaAs compound semiconductor light emitting device. On an n-type GaAs substrate 31, an n-type GaAs buffer layer 33 and an n-type AlGaInP
Clad layer 35, AlGaInP active layer 37, p-type Al
A GaInP cladding layer 39, a p-type AlGaAs current diffusion layer 57, and a p-type GaAs contact layer 43 are grown. A p-side electrode 49 is formed on the p-type GaAs contact layer 43.
However, an N-side electrode 51 is formed on the back surface of the n-type GaAs substrate 31.
【０００９】このような構造のＧａＡｓ系化合物半導体
発光素子では、Ｐ側電極４９から流れる電流が、ｐ型Ａ
ｌＧａＡｓ電流拡散層５７で拡散されてＡｌＧａＩｎＰ
活性層３７に注入され、ＡｌＧａＩｎＰ活性層３７とｐ
型ＡｌＧａＩｎＰクラッド層３９との接合面で発光した
光が、Ｐ側電極４９の側から取り出される。In the GaAs compound semiconductor light emitting device having such a structure, the current flowing from the P-side electrode 49 is p-type A type.
AlGaInP diffused by the lGaAs current diffusion layer 57
The AlGaInP active layer 37 is injected into the active
Light emitted at the junction surface with the AlGaInP cladding layer 39 is extracted from the P-side electrode 49 side.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、図１２
で示した従来のＧａＮ系化合物半導体発光素子では、導
電性接着剤料５５がリードフレーム５３の間やｐｎ接合
５９にまで広がり易く、電極間ショートあるいは接合間
ショートによる不良が生じていた。これを避けるために
素子サイズを大きくしてリードフレーム５３の間隔を広
くすることが考えられるが、１枚のウエハから取れる素
子数が低下し、生産コストが高くなるという欠点があ
る。また、リードフレーム５３と素子とのマウント位置
精度が高精度を要するため、量産性に欠けるという問題
もあった。However, FIG.
In the conventional GaN-based compound semiconductor light-emitting device shown in (1), the conductive adhesive material 55 easily spreads between the lead frames 53 and the pn junction 59, and a failure due to a short between electrodes or a short between junctions has occurred. In order to avoid this, it is conceivable to increase the element size and widen the interval between the lead frames 53. However, there is a disadvantage that the number of elements that can be obtained from one wafer decreases and the production cost increases. In addition, there is a problem that mass mounting is lacking because the mounting position accuracy between the lead frame 53 and the element requires high accuracy.
【００１１】一方、図１３で示した従来のＧａＡｓ系化
合物半導体発光素子では、ｐ型ＡｌＧａＡｓ電流拡散層
５７の厚さが不十分であると電流が十分に拡散されず、
Ｐ側電極４９の直下のＡｌＧａＩｎＰ活性層３７のみに
電流が注入され、発光した光がＰ側電極４９に遮られて
十分に取り出せなくなる。電流拡散が不十分であると、
均一な発光が得られず、外部量子効率が著しく低下し、
十分な発光パワーが得られないという欠点があった。こ
れを防ぐにはｐ型ＡｌＧａＡｓ電流拡散層５７を厚くす
る必要があるため、生産性コストが高くなるという問題
があった。On the other hand, in the conventional GaAs compound semiconductor light emitting device shown in FIG. 13, if the thickness of the p-type AlGaAs current diffusion layer 57 is insufficient, the current is not sufficiently diffused.
Current is injected only into the AlGaInP active layer 37 immediately below the P-side electrode 49, and the emitted light is blocked by the P-side electrode 49 and cannot be sufficiently extracted. If current spreading is insufficient,
Uniform light emission is not obtained, external quantum efficiency is significantly reduced,
There is a drawback that sufficient light emission power cannot be obtained. In order to prevent this, the thickness of the p-type AlGaAs current diffusion layer 57 needs to be increased, so that there is a problem that the productivity cost is increased.
【００１２】さらに、従来例として特開平７−１３１０
７０のように、オーミック接合特性を示す金属の透明導
電膜と、光の波長近傍に最大透過率を持つ透明導電膜と
の組み合わせも提案されているが、メサエッチングが必
要であり、ｐｎ接合保護が不十分で信頼性に欠ける。Further, as a conventional example, Japanese Patent Application Laid-Open No. 7-1310
Although a combination of a metal transparent conductive film exhibiting ohmic junction characteristics and a transparent conductive film having a maximum transmittance in the vicinity of the light wavelength as in the case of 70 has also been proposed, it requires mesa etching and protects the pn junction protection. Is insufficient and unreliable.
【００１３】本発明は以上のような問題に鑑みて成され
たものであり、その目的は、生産コストが低く、量産性
に適し、かつ十分な発光パワーが得られる化合物半導体
発光素子及びその製造方法を提供することである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a compound semiconductor light emitting device which has a low production cost, is suitable for mass production, and has sufficient light emission power, and its production. Is to provide a way.
【００１４】[0014]
【課題を解決するための手段】上述した目的を達成する
ため、本発明の第１の発明の特徴は、ＧａＮ系化合物半
導体層から光を取り出す化合物半導体発光素子であっ
て、サファイア基板と、該サファイア基板上に成長した
第１導電型ＧａＮ層と、該第１導電型ＧａＮ層上に成長
した第２導電型ＧａＮ層と、該第２導電型ＧａＮ層と絶
縁され、前記第１導電型ＧａＮ層上に形成された第１電
極と、前記第２導電型ＧａＮ層上の一部領域に形成され
た絶縁膜と、前記第２導電型ＧａＮ層上の前記絶縁膜形
成領域以外の領域に形成された、前記第２導電型ＧａＮ
層と同一導電型ドーパントを含む金属薄膜電極と、該金
属薄膜電極上に形成された透明電極と、前記絶縁膜上に
形成され、少なくとも前記透明電極の一部と接する第２
電極とを具備したことにある。Means for Solving the Problems To achieve the above object, a first aspect of the present invention is a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising a sapphire substrate, A first conductivity type GaN layer grown on a sapphire substrate, a second conductivity type GaN layer grown on the first conductivity type GaN layer, and insulated from the second conductivity type GaN layer; A first electrode formed on the second conductive type GaN layer, an insulating film formed in a partial region on the second conductive type GaN layer, and a first electrode formed on a region other than the insulating film forming region on the second conductive type GaN layer The second conductivity type GaN
A metal thin film electrode containing a dopant of the same conductivity type as the layer, a transparent electrode formed on the metal thin film electrode, and a second electrode formed on the insulating film and in contact with at least a part of the transparent electrode.
And an electrode.
【００１５】第２の発明の特徴は、ＧａＮ系化合物半導
体層から光を取り出す化合物半導体発光素子の製造方法
であって、サファイア基板上に第１導電型ＧａＮ層を成
長させる工程と、該第１導電型ＧａＮ層上に第２導電型
ＧａＮ層を成長させる工程と、前記第１導電型ＧａＮ層
上に前記第２導電型ＧａＮ層と絶縁する第１電極を形成
する工程と、前記第２導電型ＧａＮ層上の一部領域に絶
縁膜を形成する工程と、前記第２導電型ＧａＮ層上の前
記絶縁膜形成領域以外の領域に、前記第２導電型ＧａＮ
層と同一導電型ドーパントを含む金属薄膜電極を形成す
る工程と、該金属薄膜電極上に透明電極を形成する工程
と、前記絶縁膜上に、少なくとも前記透明電極の一部と
接する第２電極を形成する工程とを具備したことにあ
る。A second aspect of the present invention is a method of manufacturing a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising the steps of: growing a first conductivity type GaN layer on a sapphire substrate; Growing a second conductivity type GaN layer on the conductivity type GaN layer, forming a first electrode insulated from the second conductivity type GaN layer on the first conductivity type GaN layer, Forming an insulating film in a partial region on the second conductivity type GaN layer, and forming the second conductivity type GaN on a region other than the insulating film formation region on the second conductivity type GaN layer.
Forming a metal thin film electrode containing the same conductivity type dopant as the layer, forming a transparent electrode on the metal thin film electrode, and forming a second electrode in contact with at least a part of the transparent electrode on the insulating film. Forming step.
【００１６】第１及び第２の発明によれば、サファイア
基板側から光を取り出す必要がなく、電極が形成される
ＧａＮ層側から光を取り出すことができる。第１及び第
２電極を共にＧａＮ層側に形成できるので、マウント位
置調整が容易となり、生産性が向上する。第２電極下に
絶縁膜があるので、第２電極直下で発光することがな
く、また第２電極に対するワイアボンディング時の衝撃
が緩和され、素子歩留まりが大幅に向上する。According to the first and second aspects, it is not necessary to extract light from the sapphire substrate side, and light can be extracted from the GaN layer side on which the electrodes are formed. Since both the first and second electrodes can be formed on the GaN layer side, the mounting position can be easily adjusted and the productivity can be improved. Since the insulating film is provided under the second electrode, light emission does not occur immediately below the second electrode, and an impact on the second electrode at the time of wire bonding is reduced, thereby greatly improving the element yield.
【００１７】第３の発明の特徴は、ＧａＮ系化合物半導
体層から光を取り出す化合物半導体発光素子であって、
サファイア基板と、該サファイア基板上に成長した第１
導電型ＧａＮ層と、該第１導電型ＧａＮ層上に成長し
た、半絶縁層を有する第２導電型ＧａＮ層と、該第２導
電型ＧａＮ層と絶縁され、前記第１導電型ＧａＮ層上に
形成された第１電極と、前記第２導電型ＧａＮ層の半絶
縁層以外の層上に形成された、前記第２導電型ＧａＮ層
と同一導電型ドーパントを含む金属薄膜電極と、該金属
薄膜電極上に形成された透明電極と、前記第２導電型Ｇ
ａＮ層の半絶縁層上に形成され、少なくとも前記透明電
極の一部と接する第２電極とを具備したことにある。A third feature of the present invention is a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer,
A sapphire substrate, and a first substrate grown on the sapphire substrate.
A conductive type GaN layer, a second conductive type GaN layer having a semi-insulating layer grown on the first conductive type GaN layer, and insulated from the second conductive type GaN layer, on the first conductive type GaN layer. A metal thin-film electrode formed on a layer other than the semi-insulating layer of the second conductivity type GaN layer and containing a dopant of the same conductivity type as the second conductivity type GaN layer; A transparent electrode formed on the thin-film electrode;
a second electrode formed on the semi-insulating layer of the aN layer and in contact with at least a part of the transparent electrode.
【００１８】第４の発明の特徴は、ＧａＮ系化合物半導
体層から光を取り出す化合物半導体発光素子の製造方法
であって、サファイア基板上に第１導電型ＧａＮ層を成
長させる工程と、該第１導電型ＧａＮ層上に半絶縁層を
有する第２導電型ＧａＮ層を成長させる工程と、前記第
１導電型ＧａＮ層上に前記第２導電型ＧａＮ層と絶縁す
る第１電極を形成する工程と、前記第２導電型ＧａＮ層
の半絶縁層以外の層上に、前記第２導電型ＧａＮ層と同
一導電型ドーパントを含む金属薄膜電極を形成する工程
と、該金属薄膜電極上に透明電極を形成する工程と、前
記第２導電型ＧａＮ層の半絶縁層上に、少なくとも前記
透明電極の一部と接する第２電極を形成する工程とを具
備したことにある。A feature of the fourth invention is a method of manufacturing a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, wherein a step of growing a first conductivity type GaN layer on a sapphire substrate, Growing a second conductivity type GaN layer having a semi-insulating layer on the conductivity type GaN layer, and forming a first electrode insulated from the second conductivity type GaN layer on the first conductivity type GaN layer; Forming a metal thin film electrode containing the same conductivity type dopant as the second conductivity type GaN layer on a layer other than the semi-insulating layer of the second conductivity type GaN layer; and forming a transparent electrode on the metal thin film electrode. Forming and forming a second electrode in contact with at least a part of the transparent electrode on the semi-insulating layer of the second conductivity type GaN layer.
【００１９】第３及び第４の発明によれば、第２導電型
ＧａＮ層の第２電極下領域を半絶縁層にしているので、
第２導電型ＧａＮ層上に絶縁膜を形成する必要がないた
め、生産性が向上する。第２電極下が第２導電型ＧａＮ
層の半絶縁層となっているので、電流が透明電極と金属
薄膜電極を介して第２導電型ＧａＮ層に効率良く注入さ
れ、十分な発光が可能である。According to the third and fourth inventions, the region under the second electrode of the second conductivity type GaN layer is a semi-insulating layer.
Since there is no need to form an insulating film on the second conductivity type GaN layer, productivity is improved. Below the second electrode is GaN of the second conductivity type
Since the layer is a semi-insulating layer, current is efficiently injected into the second conductivity type GaN layer via the transparent electrode and the metal thin film electrode, and sufficient light emission is possible.
【００２０】第５の発明の特徴は、ＧａＡｓ系化合物半
導体層から光を取り出す化合物半導体発光素子であっ
て、第１導電型ＧａＡｓ基板と、該第１導電型ＧａＡｓ
基板上に積層した複数層のＡｌＧａＩｎＰ層と、これら
ＡｌＧａＩｎＰ層の最上層に形成された第２導電型Ｇａ
Ａｓ層と、該第２導電型ＧａＡｓ層上の一部領域に形成
された絶縁膜と、前記第２導電型ＧａＡｓ層上の前記絶
縁膜形成領域以外の領域に形成された、前記第２導電型
ＧａＡｓ層と同一導電型ドーパントを含む金属薄膜電極
と、該金属薄膜電極上に形成された透明電極と、前記絶
縁膜上に形成され、少なくとも前記透明電極の一部と接
する第１電極と、前記第１導電型ＧａＡｓ基板裏面に形
成された第２電極とを具備したことにある。According to a fifth aspect of the present invention, there is provided a compound semiconductor light emitting device for extracting light from a GaAs-based compound semiconductor layer, comprising: a first conductivity type GaAs substrate;
A plurality of AlGaInP layers stacked on a substrate, and a second conductivity type Ga formed on the uppermost layer of these AlGaInP layers.
An As layer, an insulating film formed in a partial region on the second conductivity type GaAs layer, and the second conductive film formed in a region other than the insulating film forming region on the second conductivity type GaAs layer. A metal thin-film electrode containing the same conductivity type dopant as the type GaAs layer, a transparent electrode formed on the metal thin-film electrode, a first electrode formed on the insulating film and in contact with at least a part of the transparent electrode, A second electrode formed on the back surface of the GaAs substrate of the first conductivity type.
【００２１】第６の発明の特徴は、ＧａＡｓ系化合物半
導体層から光を取り出す化合物半導体発光素子の製造方
法であって、第１導電型ＧａＡｓ基板上に複数層のＡｌ
ＧａＩｎＰ層を積層させる工程と、これらＡｌＧａＩｎ
Ｐ層の最上層に第２導電型ＧａＡｓ層を形成する工程
と、該第２導電型ＧａＡｓ層上の一部領域に絶縁膜を形
成する工程と、前記第２導電型ＧａＡｓ層上の前記絶縁
膜形成領域以外の領域に、前記第２導電型ＧａＡｓ層と
同一導電型ドーパントを含む金属薄膜電極を形成する工
程と、該金属薄膜電極上に透明電極を形成する工程と、
前記絶縁膜上に、少なくとも前記透明電極の一部と接す
る第１電極を形成する工程と、前記第１導電型ＧａＡｓ
基板裏面に第２電極を形成する工程とを具備したことに
ある。A sixth feature of the present invention is a method of manufacturing a compound semiconductor light emitting device for extracting light from a GaAs compound semiconductor layer, wherein a plurality of layers of Al are formed on a first conductivity type GaAs substrate.
A step of stacking a GaInP layer;
Forming a second conductivity type GaAs layer on the uppermost layer of the P layer, forming an insulating film in a partial region on the second conductivity type GaAs layer, and forming the insulating film on the second conductivity type GaAs layer; Forming a metal thin-film electrode containing a dopant of the same conductivity type as the second conductivity-type GaAs layer in a region other than the film-forming region; and forming a transparent electrode on the metal thin-film electrode;
Forming a first electrode in contact with at least a part of the transparent electrode on the insulating film;
Forming a second electrode on the back surface of the substrate.
【００２２】第５及び第６の発明によれば、厚い電流拡
散層が不要になるので、生産性が向上し、コストが低く
なる。第１電極下に絶縁膜があるので、電流が第１電極
直下には流れず、透明電極と金属薄膜電極を介して第２
導電型ＧａＮ層に効率良く注入される。このため、第１
電極直下以外での高輝度な発光が可能である。According to the fifth and sixth aspects of the present invention, since a thick current spreading layer is not required, productivity is improved and cost is reduced. Since there is an insulating film under the first electrode, current does not flow directly under the first electrode, and the second film passes through the transparent electrode and the metal thin film electrode.
It is efficiently injected into the conductive GaN layer. Therefore, the first
High-luminance light emission is possible except under the electrode.
【００２３】第７の発明の特徴は、第５及び第６の発明
において、前記絶縁膜は、第１導電型ＡｌＧａＩｎＰ膜
あるいは第１導電型ＧａＡｓ膜であることにある。A feature of the seventh invention is that in the fifth and sixth inventions, the insulating film is a first conductivity type AlGaInP film or a first conductivity type GaAs film.
【００２４】第７の発明によれば、第２導電型ＧａＡｓ
層上に、これとｐｎ逆接合する第１導電型のＡｌＧａＩ
ｎＰ膜あるいはＧａＡｓ膜を形成するので、同類製造方
法によって生産性が向上する。According to the seventh aspect, GaAs of the second conductivity type is used.
On the layer, a first conductivity type AlGaI which is pn reverse junction with the layer
Since an nP film or a GaAs film is formed, productivity is improved by a similar manufacturing method.
【００２５】第８の発明の特徴は、第１乃至第７の発明
において、前記金属薄膜電極は、複数の島状に配置され
ることにある。According to an eighth aspect of the present invention, in the first to seventh aspects, the metal thin film electrodes are arranged in a plurality of islands.
【００２６】第８の発明によれば、金属薄膜電極が板状
でなく、島状に分散して配置できるので、透明電極を介
して流れてきた電流を第２導電型ＧａＡｓ層へ効率良く
分散することができる。According to the eighth aspect, since the metal thin-film electrodes can be dispersed and arranged in an island shape instead of a plate shape, the current flowing through the transparent electrode can be efficiently dispersed to the GaAs layer of the second conductivity type. can do.
【００２７】[0027]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。図１〜３は、本発明の第一実施形態
に係わるＧａＮ系化合物半導体発光素子の製造方法を示
す断面構造図である。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are sectional structural views showing a method for manufacturing a GaN-based compound semiconductor light emitting device according to the first embodiment of the present invention.
【００２８】まず、サファイア基板１の上にＧａＮバッ
ファ層３、ｎ型ＧａＮ層５、及びｐ型ドーパントである
Ｍｇを含むｐ型ＧａＮ層７を結晶成長させる（図１
（Ａ））。次に、ｐ型ＧａＮ層７にＰＥＰ法によるパタ
ーニングとエッチングを行い、ｎ型ＧａＮ層５を露出さ
せる。さらにＰＥＰ法を用いてパターニングを行い、露
出したｎ型ＧａＮ層５の上にＴｉ／Ａｕ等を蒸着し、ｐ
型ＧａＮ層７と絶縁されるＮ側電極９をリフトオフ法に
よって形成する。オーミック電極とするために７００℃
で２０分間のアニールを行う（図１（Ｂ））。First, a GaN buffer layer 3, an n-type GaN layer 5, and a p-type GaN layer 7 containing Mg as a p-type dopant are grown on a sapphire substrate 1 (FIG. 1).
(A)). Next, the p-type GaN layer 7 is patterned and etched by the PEP method to expose the n-type GaN layer 5. Further, patterning is performed using the PEP method, and Ti / Au or the like is vapor-deposited on the exposed n-type GaN layer 5,
An N-side electrode 9 insulated from the type GaN layer 7 is formed by a lift-off method. 700 ° C to make ohmic electrode
For 20 minutes (FIG. 1B).
【００２９】この後、熱ＣＶＤ法により、絶縁膜となる
ＳｉＯ2 膜１１を形成する（図２（Ａ））。ＳｉＯ2 膜
１１を、ＰＥＰ法によって一部領域を残してパターニン
グする。ｐ型ＧａＮ層７の上のＳｉＯ2 膜１１が形成さ
れていない領域に、金属薄膜電極１３となるＭｇ／Ｎｉ
＝１nm／２nmを蒸着する。次いで、ＲＦスパッタ法によ
って厚さ１００nmのＩＴＯ（Indium Tin Oxide）透明電
極１５を形成した後、リフトオフすることによってｐ型
ＧａＮ層７と同一ｐ型ドーパントであるＭｇを含む金属
薄膜電極１３が形成される。金属薄膜電極１３とｐ型Ｇ
ａＮ層７との間の密着性とオーミック性を向上させるた
め、５００℃、１０分のアニールを行う（図２
（Ｂ））。Thereafter, an SiO 2 film 11 serving as an insulating film is formed by a thermal CVD method (FIG. 2A). The SiO 2 film 11 is patterned by the PEP method, leaving a partial region. In a region on the p-type GaN layer 7 where the SiO 2 film 11 is not formed, a Mg / Ni
= 1 nm / 2 nm is deposited. Next, a 100 nm thick ITO (Indium Tin Oxide) transparent electrode 15 is formed by an RF sputtering method, and then lift-off is performed to form a metal thin film electrode 13 containing Mg which is the same p-type dopant as the p-type GaN layer 7. You. Metal thin film electrode 13 and p-type G
Annealing is performed at 500 ° C. for 10 minutes in order to improve the adhesion and ohmic properties with the aN layer 7 (FIG. 2).
(B)).
【００３０】さらに、ＰＥＰ法によるパターニングとエ
ッチングを行い、ＳｉＯ2 膜１１の上に、ＩＴＯ透明電
極１５の一部と接するボンディングパッド用Ｐ側電極１
７をＴｉ／Ａｕ等で形成する。この時、Ｎ側電極９を覆
うＳｉＯ2 膜１１も同時に除去し、Ｔｉ／Ａｕ等の金属
をオーバーコートする（図３）。Further, patterning and etching are performed by the PEP method, and a P-side electrode 1 for a bonding pad in contact with a part of the ITO transparent electrode 15 is formed on the SiO 2 film 11.
7 is formed of Ti / Au or the like. At this time, the SiO 2 film 11 covering the N-side electrode 9 is also removed at the same time, and a metal such as Ti / Au is overcoated (FIG. 3).
【００３１】このように第一実施形態では、ｐ型ドーパ
ントであるＭｇを含むｐ型ＧａＮ層７の上の一部領域
に、絶縁膜となるＳｉＯ2 膜１１が形成されている。さ
らに、ｐ型ＧａＮ層７の上のＳｉＯ2 膜１１が形成され
ていない領域に、ｐ型ＧａＮ層７と同一のｐ型ドーパン
トであるＭｇを含む金属薄膜電極１３、及びＩＴＯ透明
電極１５が形成されている。ＳｉＯ2 膜１１の上には、
ＩＴＯ透明電極１５の一部と接するボンディングパッド
用Ｐ側電極１７が形成されている。As described above, in the first embodiment, the SiO 2 film 11 serving as an insulating film is formed in a partial region on the p-type GaN layer 7 containing Mg as a p-type dopant. Further, a metal thin-film electrode 13 containing Mg, which is the same p-type dopant as the p-type GaN layer 7, and an ITO transparent electrode 15 are formed in a region on the p-type GaN layer 7 where the SiO 2 film 11 is not formed. Have been. On the SiO 2 film 11,
A bonding pad P-side electrode 17 that is in contact with a part of the ITO transparent electrode 15 is formed.
【００３２】ＩＴＯ透明電極１５は、ｎ型不純物である
Ｓｎを含むため、一般にｐ型ＧａＮ層７の上には形成で
きない。本発明では、ｐ型ＧａＮ層７と比較的オーミッ
クの取りやすいＭｇを含む金属薄膜電極１３を、発光し
た光に対して７０％の透過率を有するような厚さである
２nmの厚さで形成し、さらに金属薄膜電極１３のシート
抵抗を低減させるために厚さ１００nmのＩＴＯ透明電極
１５を形成している。Since the ITO transparent electrode 15 contains Sn which is an n-type impurity, it cannot be generally formed on the p-type GaN layer 7. In the present invention, the p-type GaN layer 7 and the metal thin-film electrode 13 containing Mg, which is relatively easy to obtain ohmic, are formed with a thickness of 2 nm, which has a transmittance of 70% for emitted light. Further, in order to further reduce the sheet resistance of the metal thin film electrode 13, an ITO transparent electrode 15 having a thickness of 100 nm is formed.
【００３３】このため、Ｍｇを含む金属薄膜電極１３の
作用でオーミック性を犠牲にすること無く、容易にＩＴ
Ｏ透明電極１５を形成できる。また、ボンディングパッ
ド用Ｐ側電極１７がＩＴＯ透明電極１５の一部と接して
形成されているので、剥がれやすいＭｇを含む金属薄膜
電極１３は、ボンディングに対して十分な強度を持つこ
とができる。Therefore, the operation of the metal thin film electrode 13 containing Mg can be easily performed without sacrificing ohmic properties.
The O transparent electrode 15 can be formed. Further, since the bonding pad P-side electrode 17 is formed in contact with a part of the ITO transparent electrode 15, the metal thin film electrode 13 containing Mg which is easily peeled can have sufficient strength for bonding.
【００３４】図３に示すように、本発明のＧａＮ系化合
物半導体発光素子によれば、図１２で示した従来のよう
に、サファイア基板１の側から光を取り出す必要がな
く、ｎ型ＧａＮ層５とｐ型ＧａＮ層７との接合面から発
光される光を、電極９，１７が形成されるＧａＮ層側か
ら取り出すことができる。As shown in FIG. 3, according to the GaN-based compound semiconductor light emitting device of the present invention, there is no need to extract light from the sapphire substrate 1 side, unlike the conventional case shown in FIG. Light emitted from the bonding surface between the p-type GaN layer 5 and the p-type GaN layer 7 can be extracted from the GaN layer side where the electrodes 9 and 17 are formed.
【００３５】これにより、図４のように、化合物半導体
発光素子をカップ型リードフレーム１９に設置してＮ側
電極９とワイアボンディングし、ボンディングパッド用
Ｐ側電極１７とＰ側電極端子２１とをワイアボンディン
グすることによって集光性を向上させることができる。As a result, as shown in FIG. 4, the compound semiconductor light emitting device is mounted on the cup-type lead frame 19 and wire-bonded to the N-side electrode 9 to connect the P-side electrode 17 for the bonding pad and the P-side electrode terminal 21 to each other. The light collecting property can be improved by wire bonding.
【００３６】また、ボンディングパッド用Ｐ側電極１７
を、ＩＴＯ透明電極１５の上に直接形成するのではな
く、絶縁膜となるＳｉＯ2 膜１１の上にＩＴＯ透明電極
１５の一部と接するように形成している。この結果、電
流がＰ側のＩＴＯ透明電極１５を介して拡散され、金属
薄膜電極１３を介してｐ型ＧａＮ層７に効率良く注入さ
れると共に、ワイアボンディング時の衝撃が緩和されて
素子歩留まりが大幅に向上する。The bonding pad P-side electrode 17
Is not formed directly on the ITO transparent electrode 15, but is formed on the SiO 2 film 11 serving as an insulating film so as to be in contact with a part of the ITO transparent electrode 15. As a result, the current is diffused through the P-side ITO transparent electrode 15 and efficiently injected into the p-type GaN layer 7 through the metal thin-film electrode 13, and the impact at the time of wire bonding is alleviated and the element yield is reduced. Significantly improved.
【００３７】ｎ型ＧａＮ層５の同一面上にＮ側電極９及
びＰ側電極１７を設けることができるため、マウント位
置調整が容易となり、生産性が向上する。さらに、ＩＴ
Ｏ透明電極１５が形成されている状態でアニールするこ
とにより、金属薄膜電極１３がアニールによって再度蒸
発して消失あるいは薄膜化してしまうという、電極プロ
セス上の金属膜厚の制御性の低下と、それに伴う発光素
子のＩ−Ｖ特性の悪化を避けることができる。Since the N-side electrode 9 and the P-side electrode 17 can be provided on the same surface of the n-type GaN layer 5, the mounting position can be easily adjusted and the productivity can be improved. Furthermore, IT
Annealing in the state where the O transparent electrode 15 is formed lowers the controllability of the metal film thickness in the electrode process, in which the metal thin film electrode 13 evaporates again and disappears or becomes thinner due to the annealing. Accordingly, deterioration of the IV characteristics of the light emitting element can be avoided.
【００３８】なお、ＳｉＯ2 膜１１、金属薄膜電極１
３、ＩＴＯ透明電極１５、及びボンディングパッド用Ｐ
側電極１７の構造は、図３で示した構造に限らず、図５
（Ａ）、（Ｂ）のように、ボンディングパッド用Ｐ側電
極１７が金属薄膜電極１３及びＩＴＯ透明電極１５の両
方に接する構造でも良く、少なくともＩＴＯ透明電極１
５の一部に接していれば良いものである。また、図５
（Ｃ）のように、ｐ型ＧａＮ層７の一部領域層を半絶縁
層２３（図中、網掛け部）にし、この半絶縁層２３の上
にボンディングパッド用Ｐ側電極１７を形成しても良い
ものである。これによれば、ＳｉＯ2 膜１１を形成する
必要がないため、生産性が向上する。The SiO 2 film 11 and the metal thin film electrode 1
3, ITO transparent electrode 15, and P for bonding pad
The structure of the side electrode 17 is not limited to the structure shown in FIG.
As shown in (A) and (B), a structure in which the bonding pad P-side electrode 17 is in contact with both the metal thin film electrode 13 and the ITO transparent electrode 15 may be used.
What is necessary is just to touch a part of No. 5. FIG.
As shown in (C), a partial region layer of the p-type GaN layer 7 is made into a semi-insulating layer 23 (shaded portion in the figure), and a bonding pad P-side electrode 17 is formed on the semi-insulating layer 23. It is a good thing. According to this, since it is not necessary to form the SiO 2 film 11, productivity is improved.
【００３９】さらに、金属薄膜電極１３の形状は必ずし
も板状でなくても良く、例えば図６のように、複数の島
状に配置しても良い。このように金属薄膜電極１３を複
数の島状に分散して配置することにより、ＩＴＯ透明電
極１５を介して流れてきた電流を、ｐ型ＧａＮ層７へ効
率良く分散することができる。Further, the shape of the metal thin film electrodes 13 does not necessarily have to be plate-like, and may be arranged in a plurality of islands, for example, as shown in FIG. By disposing the metal thin-film electrodes 13 in a plurality of islands in this manner, the current flowing through the ITO transparent electrode 15 can be efficiently dispersed to the p-type GaN layer 7.
【００４０】以下に、本発明の第二実施形態を図面に基
づいて説明する。図７〜９は、本発明の第二実施形態に
係わるＧａＡｓ系化合物半導体発光素子の製造方法を示
す断面構造図である。Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. 7 to 9 are sectional structural views showing a method for manufacturing a GaAs-based compound semiconductor light emitting device according to the second embodiment of the present invention.
【００４１】まず、ｎ型ＧａＡｓ基板３１の上にｎ型Ｇ
ａＡｓバッファ層３３、ｎ型ＡｌＧａＩｎＰクラッド層
３５、ＡｌＧａＩｎＰ活性層３７、ｐ型ＡｌＧａＩｎＰ
クラッド層３９、及びｐ型ドーバントであるＺｎを含む
ｐ型ＧａＡｓコンタクト層４１を順次積層させる（図７
（Ａ））。ｐ型ＧａＡｓコンタクト層４１の上の一部領
域に、ｎ型ＡｌＧａＩｎＰあるいはｎ型ＧａＡｓの電流
ブロック層４３を形成する（図７（Ｂ））。First, an n-type G substrate is placed on an n-type GaAs substrate 31.
aAs buffer layer 33, n-type AlGaInP cladding layer 35, AlGaInP active layer 37, p-type AlGaInP
A cladding layer 39 and a p-type GaAs contact layer 41 containing Zn which is a p-type dopant are sequentially laminated (FIG. 7).
(A)). A current block layer 43 of n-type AlGaInP or n-type GaAs is formed in a partial region on the p-type GaAs contact layer 41 (FIG. 7B).
【００４２】次に、ｐ型ＧａＡｓコンタクト層４１の上
の電流ブロック層４３が形成されていない領域に、ｐ型
ＧａＡｓコンタクト層４１と同一のｐ型ドーパントであ
るＺｎを含む金属薄膜電極４５を、ＡｕＺｎ＝５nm、４
３０℃、１５分のシンタによって形成する（図８
（Ａ））。さらに、電流ブロック層４３と金属薄膜電極
４５の上に、ＩＴＯ透明電極４７を形成する（図８
（Ｂ））。Next, a metal thin-film electrode 45 containing Zn, which is the same p-type dopant as the p-type GaAs contact layer 41, is formed in a region on the p-type GaAs contact layer 41 where the current blocking layer 43 is not formed. AuZn = 5 nm, 4
Formed by sintering at 30 ° C. for 15 minutes (FIG. 8)
(A)). Further, an ITO transparent electrode 47 is formed on the current block layer 43 and the metal thin film electrode 45 (FIG. 8).
(B)).
【００４３】最後に、電流ブロック層４３の上のＩＴＯ
透明電極４７をエッチング除去した後、ＩＴＯ透明電極
４７の一部と接するＰ側電極４９を形成すると同時に、
ｎ型ＧａＡｓ基板３１の裏面にＮ側電極５１を形成する
（図９）。Finally, the ITO on the current block layer 43
After the transparent electrode 47 is removed by etching, a P-side electrode 49 that is in contact with a part of the ITO transparent electrode 47 is formed.
An N-side electrode 51 is formed on the back surface of the n-type GaAs substrate 31 (FIG. 9).
【００４４】このように第二実施形態では、Ｐ側電極４
９の下にこれとｐｎ逆接合する、ｎ型ＡｌＧａＩｎＰあ
るいはｎ型ＧａＡｓの電流ブロック層４３を形成し、Ｐ
側電極４９の直下に電流が流れることを阻止している。
また、Ｐ側電極４９がＩＴＯ透明電極４７の一部と接し
ているため、図９のように、電流がＩＴＯ透明電極４７
を介して拡散され、ＡｌＧａＩｎＰ活性層３７に効率良
く注入される。この結果、ＡｌＧａＩｎＰ活性層３７と
ｐ型ＡｌＧａＩｎＰクラッド層３９との接合面におい
て、均一な発光が得られると共に発光した光を効率良く
取り出せる。As described above, in the second embodiment, the P-side electrode 4
9, a current blocking layer 43 of n-type AlGaInP or n-type GaAs, which is a pn reverse junction with this, is formed.
The current is prevented from flowing just below the side electrode 49.
Further, since the P-side electrode 49 is in contact with a part of the ITO transparent electrode 47, as shown in FIG.
And is efficiently injected into the AlGaInP active layer 37. As a result, uniform light emission can be obtained and the emitted light can be efficiently extracted at the joint surface between the AlGaInP active layer 37 and the p-type AlGaInP cladding layer 39.
【００４５】さらに、電流ブロック層４３をＧａＡｓ系
化合物半導体で形成しているので、同類製造方法で形成
可能であると共に、図１３で示した厚いｐ型ＡｌＧａＡ
ｓ電流拡散層５７が不要であるため、生産性が向上し、
コストが低くなる。Further, since the current block layer 43 is formed of a GaAs-based compound semiconductor, it can be formed by a similar manufacturing method and has a thick p-type AlGaAs shown in FIG.
Since the s current diffusion layer 57 is unnecessary, the productivity is improved,
Lower costs.
【００４６】なお、電流ブロック層４３、金属薄膜電極
４５、ＩＴＯ透明電極４７、及びＰ側電極４９の構造
は、図９で示した構造に限らず、図１０（Ａ）〜（Ｃ）
のように、Ｐ側電極４９が金属薄膜電極４５及びＩＴＯ
透明電極４７の両方に接する構造でも良く、少なくとも
ＩＴＯ透明電極４７の一部に接していれば良いものであ
る。The structures of the current blocking layer 43, the metal thin-film electrode 45, the ITO transparent electrode 47, and the P-side electrode 49 are not limited to the structure shown in FIG. 9, but are shown in FIGS.
As shown in FIG.
The structure may be in contact with both of the transparent electrodes 47, and it is sufficient that the structure is in contact with at least a part of the ITO transparent electrode 47.
【００４７】また、電流ブロック層４３は、ｎ型ＡｌＧ
ａＩｎＰあるいはｎ型ＧａＡｓである必要はなく、Ｓｉ
Ｏ2 等の絶縁膜で形成しても良いものである。この場合
は、図１０（Ａ）〜（Ｄ）で示すような構造にすること
が可能である。さらに、金属薄膜電極４５の形状は必ず
しも板状でなくても良く、第一実施形態でも説明したよ
うに、図６のような複数の島状に配置しても良い。The current blocking layer 43 is made of n-type AlG
It does not need to be aInP or n-type GaAs.
It may be formed of an insulating film such as O 2 . In this case, a structure as shown in FIGS. Further, the shape of the metal thin film electrodes 45 does not necessarily have to be a plate shape, and may be arranged in a plurality of island shapes as shown in FIG. 6 as described in the first embodiment.
【００４８】以上説明してきた本発明のＧａＮ系化合物
半導体発光素子と従来のそれとの、Ｉ−Ｖ特性、及び光
出力特性を比較したグラフを図１１に示す。図中、点線
が本発明と従来のＩ−Ｖ特性、実線が本発明の光出力特
性、一点鎖線が従来の光出力特性を示す。２０mAの電流
に対する順方向電圧は本発明、従来共に３．８Ｖ、従来
の光出力は約７０μWであるのに対し、本発明のそれは
１００μWという良好な特性が得られた。ウエハ面内で
のＩ−Ｖ特性や光出力のばらつきも非常に少なく、素子
歩留り９０％以上であった。FIG. 11 is a graph comparing the IV characteristics and the light output characteristics of the GaN-based compound semiconductor light emitting device of the present invention described above and the conventional one. In the figure, the dotted line indicates the present invention and the conventional IV characteristic, the solid line indicates the light output characteristic of the present invention, and the one-dot chain line indicates the conventional light output characteristic. The forward voltage with respect to a current of 20 mA is 3.8 V in the present invention and the conventional, and the conventional optical output is about 70 μW in the related art. In contrast, the present invention has a good characteristic of 100 μW. Variations in IV characteristics and optical output within the wafer surface were extremely small, and the element yield was 90% or more.
【００４９】なお、第一及び第二実施形態では、ＧａＮ
層として説明したが、これに限定されるものでなくＩｎ
ｘＧａｙＡｌｚＮ層：ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ
≦１でよい。また、金属薄膜電極１３，４５の材料とし
てＮｉやＡｕＺｎ、透明電極１５，４７の材料としてＩ
ＴＯ（Indium Tin Oxide）を用いたが、これに限るもの
ではない。例えば、金属薄膜電極１３，４５の材料とし
ては、ＡｕＢｅ、ＡｕＭｇ、ＡｕＧｅ等のｐ型ＧａＮ層
７あるいはｐ型ＧａＡｓコンタクト層４１に対するドー
パントを含む材料であれば良い。また、透明電極１５，
４７に対する密着性向上のため、金属薄膜電極１３，４
５をＮｉ、ＡｕＺｎ、Ｔｉ／ＡｕＺｎ等の多層構造とし
ても良い。In the first and second embodiments, GaN
Although described as a layer, the present invention is not limited to this.
xGayAlzN layer: x + y + z = 1, 0 ≦ x, y, z
It may be ≦ 1. Further, Ni or AuZn is used as a material of the metal thin film electrodes 13 and 45, and I or AuZn is used as a material of the transparent electrodes 15 and 47.
Although TO (Indium Tin Oxide) was used, the invention is not limited to this. For example, the metal thin-film electrodes 13 and 45 may be made of a material containing a dopant for the p-type GaN layer 7 or the p-type GaAs contact layer 41, such as AuBe, AuMg, or AuGe. In addition, the transparent electrode 15,
In order to improve the adhesion to 47, metal thin film electrodes 13 and 4
5 may have a multilayer structure of Ni, AuZn, Ti / AuZn or the like.
【００５０】さらに、金属薄膜電極１３，４５をオーミ
ック電極とするためのシンタは、金属薄膜電極１３，４
５を形成した後行っても良いし、ＩＴＯ透明電極１５，
４７を形成した後行っても良い。Further, a sinter for using the metal thin film electrodes 13 and 45 as ohmic electrodes is provided by the metal thin film electrodes 13 and 4.
5 may be formed, or the ITO transparent electrodes 15 and
47 may be performed after the formation.
【００５１】[0051]
【発明の効果】以上、本発明の化合物半導体発光素子及
びその製造方法によれば、化合物半導体層の上にこれと
同一導電型ドーパントを含む金属薄膜電極を形成し、そ
の上に形成された透明電極の少なくとも一部と接する電
極を形成したので、生産コストが低く、量産性に適した
化合物半導体発光素子を提供することができる。また、
透明電極の下に絶縁膜などを設け、透明電極直下に電流
が流れないようにしたので、発光面に効率良く電流が流
れるため、十分な発光パワーの光が取り出せる。As described above, according to the compound semiconductor light emitting device and the method of manufacturing the same of the present invention, a metal thin film electrode containing a dopant of the same conductivity type is formed on a compound semiconductor layer, and a transparent thin film formed thereon is formed. Since an electrode in contact with at least a part of the electrode is formed, a compound semiconductor light-emitting element which is low in production cost and suitable for mass productivity can be provided. Also,
An insulating film or the like is provided under the transparent electrode so that current does not flow directly under the transparent electrode, so that current can flow efficiently to the light emitting surface, so that light with sufficient emission power can be extracted.
【図１】本発明の第一実施形態に係わる製造方法を示す
断面構造図。FIG. 1 is a sectional structural view showing a manufacturing method according to a first embodiment of the present invention.
【図２】図１に続く断面構造図。FIG. 2 is a sectional structural view following FIG. 1;
【図３】図２に続くＧａＮ系化合物半導体発光素子の断
面構造図。FIG. 3 is a sectional structural view of the GaN-based compound semiconductor light emitting device following FIG. 2;
【図４】第一実施形態の発光素子をカップ型リードフレ
ーム２１に設置した断面図。FIG. 4 is a sectional view in which the light emitting device of the first embodiment is installed on a cup-type lead frame 21;
【図５】第一実施形態に係わるＰ側電極周辺の他の構造
を示す断面構造図。FIG. 5 is a sectional structural view showing another structure around a P-side electrode according to the first embodiment.
【図６】金属薄膜電極の他の形状を示す斜視図。FIG. 6 is a perspective view showing another shape of the metal thin film electrode.
【図７】本発明の第二実施形態に係わる製造方法を示す
断面構造図。FIG. 7 is a sectional structural view showing a manufacturing method according to a second embodiment of the present invention.
【図８】図７に続く断面構造図。FIG. 8 is a sectional structural view following FIG. 7;
【図９】図８に続くＧａＡｓ系化合物半導体発光素子の
断面構造図。FIG. 9 is a sectional structural view of the GaAs compound semiconductor light emitting device following FIG. 8;
【図１０】第二実施形態に係わるＰ側電極周辺の他の構
造を示す断面構造図。FIG. 10 is a sectional structural view showing another structure around a P-side electrode according to the second embodiment.
【図１１】本発明と従来のＩ−Ｖ特性及び光出力特性を
比較したグラフ。FIG. 11 is a graph comparing an IV characteristic and a light output characteristic of the present invention with a conventional one.
【図１２】従来のＧａＮ系化合物半導体発光素子の断面
構造図。FIG. 12 is a sectional structural view of a conventional GaN-based compound semiconductor light emitting device.
【図１３】従来のＧａＡｓ系化合物半導体発光素子の断
面構造図。FIG. 13 is a sectional structural view of a conventional GaAs compound semiconductor light emitting device.
１ サファイア基板 ３ ＧａＮバッファ層 ５ ｎ型ＧａＮ層 ７ ｐ型ＧａＮ層 ９ Ｎ側電極 １１ ＳｉＯ2 膜 １３ 金属薄膜電極 １５ ＩＴＯ透明電極 １７ ボンディングパッド用Ｐ側電極 １９ カップ型リードフレーム ２１ Ｐ側電極端子 ２３ 半絶縁層 ３１ ｎ型ＧａＡｓ基板 ３３ ｎ型ＧａＡｓバッファ層 ３５ ｎ型ＡｌＧａＩｎＰクラッド層 ３７ ＡｌＧａＩｎＰ活性層 ３９ ｐ型ＡｌＧａＩｎＰクラッド層 ４１ ｐ型ＧａＡｓコンタクト層 ４３ 電流ブロック層 ４５ 金属薄膜電極 ４７ ＩＴＯ透明電極 ４９ Ｐ側電極 ５１ Ｎ側電極Reference Signs List 1 sapphire substrate 3 GaN buffer layer 5 n-type GaN layer 7 p-type GaN layer 9 N-side electrode 11 SiO 2 film 13 metal thin-film electrode 15 ITO transparent electrode 17 P-side electrode for bonding pad 19 Cup-type lead frame 21 P-side electrode terminal Reference Signs List 23 semi-insulating layer 31 n-type GaAs substrate 33 n-type GaAs buffer layer 35 n-type AlGaInP clad layer 37 AlGaInP active layer 39 p-type AlGaInP clad layer 41 p-type GaAs contact layer 43 current block layer 45 metal thin film electrode 47 ITO transparent electrode 49 P-side electrode 51 N-side electrode
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−125224（ＪＰ，Ａ) 特開 平８−250768（ＪＰ，Ａ) 特開 平８−250769（ＪＰ，Ａ) 特開 平９−129933（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-8-125224 (JP, A) JP-A-8-250768 (JP, A) JP-A-8-250769 (JP, A) JP-A-9-205 129933 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00
Claims (8)
す化合物半導体発光素子であって、 サファイア基板と、 該サファイア基板上に成長した第１導電型ＩｎｘＧａｙ
ＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）
と、 該第１導電型ＧａＮ層上に成長した第２導電型ＩｎｘＧ
ａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦
１）と、 該第２導電型ＧａＮ層と絶縁され、前記第１導電型Ｉｎ
ｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ
≦１）上に形成された第１電極と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上の一部領域に形成された絶
縁膜と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上の前記絶縁膜形成領域以外
の領域に形成された、前記第２導電型ＩｎｘＧａｙＡｌ
ｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）と同一
導電型ドーパントを含む金属薄膜電極と、 該金属薄膜電極上に形成された透明電極と、 前記絶縁膜上に形成され、少なくとも前記透明電極の一
部と接する第２電極とを具備したことを特徴とする化合
物半導体発光素子。1. A compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising: a sapphire substrate; and a first conductivity type InxGay grown on the sapphire substrate.
AlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦ 1)
And a second conductivity type InxG grown on the first conductivity type GaN layer.
ayAlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦
1) and the second conductivity type GaN layer is insulated from the first conductivity type GaN layer.
xGayAlzN layer (x + y + z = 1, 0 ≦ x, y, z
≦ 1), a first electrode formed on the second conductive type InxGayAlzN layer (x + y + z =
An insulating film formed in a partial region above (1, 0 ≦ x, y, z ≦ 1); and the second conductivity type InxGayAlzN layer (x + y + z =
1,0 ≦ x, y, z ≦ 1), the second conductivity type InxGayAl formed in a region other than the insulating film formation region.
a metal thin-film electrode containing the same conductivity type dopant as the zN layer (x + y + z = 1, 0 ≦ x, y, z ≦ 1); a transparent electrode formed on the metal thin-film electrode; A compound semiconductor light-emitting device, comprising: a second electrode in contact with at least a part of the transparent electrode.
す化合物半導体発光素子の製造方法であって、 サファイア基板上に第１導電型ＩｎｘＧａｙＡｌｚＮ層
（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）を成長させる
工程と、 該第１導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上に第２導電型ＧａＮ層を成
長させる工程と、 前記第１導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上に前記第２導電型ＧａＮ層
と絶縁する第１電極を形成する工程と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上の一部領域に絶縁膜を形成
する工程と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上の前記絶縁膜形成領域以外
の領域に、前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ
＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）と同一導電型ドー
パントを含む金属薄膜電極を形成する工程と、 該金属薄膜電極上に透明電極を形成する工程と、 前記絶縁膜上に、少なくとも前記透明電極の一部と接す
る第２電極を形成する工程とを具備したことを特徴とす
る化合物半導体発光素子の製造方法。2. A method of manufacturing a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising: a first conductivity type InxGayAlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦ 1) on a sapphire substrate. Growing the first conductivity type InxGayAlzN layer (x + y + z =
Growing a second conductivity type GaN layer on (1,0 ≦ x, y, z ≦ 1); and forming the first conductivity type InxGayAlzN layer (x + y + z =
Forming a first electrode insulated from the second conductivity type GaN layer on (1,0 ≦ x, y, z ≦ 1); and forming the second conductivity type InxGayAlzN layer (x + y + z =
Forming an insulating film in a partial region on (1, 0 ≦ x, y, z ≦ 1); and forming the second conductivity type InxGayAlzN layer (x + y + z =
1,0 ≦ x, y, z ≦ 1), in a region other than the insulating film formation region, the second conductivity type InxGayAlzN layer (x
+ Y + z = 1, 0 ≦ x, y, z ≦ 1), forming a metal thin-film electrode containing the same conductivity type dopant, forming a transparent electrode on the metal thin-film electrode, Forming a second electrode that is in contact with at least a part of the transparent electrode.
す化合物半導体発光素子であって、 サファイア基板と、 該サファイア基板上に成長した第１導電型ＩｎｘＧａｙ
ＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）
と、 該第１導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上に成長した、半絶縁層を有
する第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）と、 該第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）と絶縁され、前記第１導電型
ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，
ｙ，ｚ≦１）上に形成された第１電極と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）の半絶縁層以外の層上に形成
された、前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋
ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）と同一導電型ドーパ
ントを含む金属薄膜電極と、 該金属薄膜電極上に形成された透明電極と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）の半絶縁層上に形成され、少
なくとも前記透明電極の一部と接する第２電極とを具備
したことを特徴とする化合物半導体発光素子。3. A compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising: a sapphire substrate; and a first conductivity type InxGay grown on the sapphire substrate.
AlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦ 1)
And the first conductivity type InxGayAlzN layer (x + y + z =
1,0 ≦ x, y, z ≦ 1) and a second conductivity type InxGayAlzN layer having a semi-insulating layer (x + y + z =
1,0 ≦ x, y, z ≦ 1) and the second conductivity type InxGayAlzN layer (x + y + z =
1,0 ≦ x, y, z ≦ 1), and the first conductivity type InxGayAlzN layer (x + y + z = 1,0 ≦ x,
y, z ≦ 1) and a second conductivity type InxGayAlzN layer (x + y + z =
The second conductivity type InxGayAlzN layer (x +) formed on a layer other than the semi-insulating layer of 1,0 ≦ x, y, z ≦ 1)
y + z = 1, 0 ≦ x, y, z ≦ 1), a metal thin film electrode containing the same conductivity type dopant, a transparent electrode formed on the metal thin film electrode, and the second conductivity type InxGayAlzN layer (x + y + z =
A compound semiconductor light emitting device comprising: a second electrode formed on a semi-insulating layer (1, 0 ≦ x, y, z ≦ 1) and in contact with at least a part of the transparent electrode.
す化合物半導体発光素子の製造方法であって、 サファイア基板上に第１導電型ＩｎｘＧａｙＡｌｚＮ層
（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦１）を成長させる
工程と、 該第１導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上に半絶縁層を有する第２導
電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦
ｘ，ｙ，ｚ≦１）を成長させる工程と、 前記第１導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）上に前記第２導電型ＩｎｘＧ
ａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝１，０≦ｘ，ｙ，ｚ≦
１）と絶縁する第１電極を形成する工程と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）の半絶縁層以外の層上に、前
記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）と同一導電型ドーパントを含
む金属薄膜電極を形成する工程と、 該金属薄膜電極上に透明電極を形成する工程と、 前記第２導電型ＩｎｘＧａｙＡｌｚＮ層（ｘ＋ｙ＋ｚ＝
１，０≦ｘ，ｙ，ｚ≦１）の半絶縁層上に、少なくとも
前記透明電極の一部と接する第２電極を形成する工程と
を具備したことを特徴とする化合物半導体発光素子の製
造方法。4. A method of manufacturing a compound semiconductor light emitting device for extracting light from a GaN-based compound semiconductor layer, comprising: a first conductivity type InxGayAlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦ 1) on a sapphire substrate. Growing the first conductivity type InxGayAlzN layer (x + y + z =
A second conductivity type InxGayAlzN layer having a semi-insulating layer on (1,0 ≦ x, y, z ≦ 1) (x + y + z = 1,0 ≦
(x, y, z ≦ 1); and the first conductivity type InxGayAlzN layer (x + y + z = 1).
1,0 ≦ x, y, z ≦ 1) on the second conductivity type InxG
ayAlzN layer (x + y + z = 1, 0 ≦ x, y, z ≦
1) forming a first electrode that is insulated from the second conductivity type InxGayAlzN layer (x + y + z =
On the layers other than the semi-insulating layer of (1,0 ≦ x, y, z ≦ 1), the second conductivity type InxGayAlzN layer (x + y + z =
1,0 ≦ x, y, z ≦ 1) forming a metal thin film electrode containing a dopant of the same conductivity type as above, forming a transparent electrode on the metal thin film electrode, and forming the second conductivity type InxGayAlzN layer ( x + y + z =
Forming a second electrode in contact with at least a part of the transparent electrode on a semi-insulating layer (1, 0 ≦ x, y, z ≦ 1). Method.
出す化合物半導体発光素子であって、 第１導電型ＧａＡｓ基板と、 該第１導電型ＧａＡｓ基板上に積層した複数層のＡｌＧ
ａＩｎＰ層と、 これらＡｌＧａＩｎＰ層の最上層に形成された第２導電
型ＧａＡｓ層と、 該第２導電型ＧａＡｓ層上の一部領域に形成された絶縁
膜と、 前記第２導電型ＧａＡｓ層上の前記絶縁膜形成領域以外
の領域に形成された、前記第２導電型ＧａＡｓ層と同一
導電型ドーパントを含む金属薄膜電極と、 該金属薄膜電極上に形成された透明電極と、 前記絶縁膜上に形成され、少なくとも前記透明電極の一
部と接する第１電極と、 前記第１導電型ＧａＡｓ基板裏面に形成された第２電極
とを具備したことを特徴とする化合物半導体発光素子。5. A compound semiconductor light emitting device for extracting light from a GaAs-based compound semiconductor layer, comprising: a first conductivity type GaAs substrate; and a plurality of layers of AlG laminated on the first conductivity type GaAs substrate.
an aInP layer; a second conductivity type GaAs layer formed on the uppermost layer of the AlGaInP layer; an insulating film formed in a partial region on the second conductivity type GaAs layer; A metal thin-film electrode including a dopant of the same conductivity type as that of the GaAs layer of the second conductivity type formed in a region other than the insulating film forming region; a transparent electrode formed on the metal thin-film electrode; And a second electrode formed on the back surface of the GaAs substrate of the first conductivity type, wherein the first electrode is in contact with at least a part of the transparent electrode.
出す化合物半導体発光素子の製造方法であって、 第１導電型ＧａＡｓ基板上に複数層のＡｌＧａＩｎＰ層
を積層させる工程と、 これらＡｌＧａＩｎＰ層の最上層に第２導電型ＧａＡｓ
層を形成する工程と、 該第２導電型ＧａＡｓ層上の一部領域に絶縁膜を形成す
る工程と、 前記第２導電型ＧａＡｓ層上の前記絶縁膜形成領域以外
の領域に、前記第２導電型ＧａＡｓ層と同一導電型ドー
パントを含む金属薄膜電極を形成する工程と、 該金属薄膜電極上に透明電極を形成する工程と、 前記絶縁膜上に、少なくとも前記透明電極の一部と接す
る第１電極を形成する工程と、 前記第１導電型ＧａＡｓ基板裏面に第２電極を形成する
工程とを具備したことを特徴とする化合物半導体発光素
子の製造方法。6. A method for manufacturing a compound semiconductor light emitting device for extracting light from a GaAs-based compound semiconductor layer, comprising: stacking a plurality of AlGaInP layers on a GaAs substrate of a first conductivity type; GaAs of the second conductivity type
Forming a layer; forming an insulating film in a partial region on the second conductivity type GaAs layer; forming the second conductive type GaAs layer in a region other than the insulating film forming region on the second conductivity type GaAs layer. A step of forming a metal thin-film electrode containing the same conductivity type dopant as the conductive GaAs layer; a step of forming a transparent electrode on the metal thin-film electrode; and a step of contacting at least a part of the transparent electrode on the insulating film. A method for manufacturing a compound semiconductor light emitting device, comprising: forming one electrode; and forming a second electrode on the back surface of the GaAs substrate of the first conductivity type.
Ｐ膜あるいは第１導電型ＧａＡｓ膜であることを特徴と
する請求項５及び６記載の化合物半導体発光素子及びそ
の製造方法。7. The method according to claim 1, wherein the insulating film is formed of a first conductivity type AlGaIn.
7. The compound semiconductor light-emitting device according to claim 5, wherein the film is a P film or a GaAs film of the first conductivity type.
されることを特徴とする請求項１乃至７記載の化合物半
導体発光素子及びその製造方法。8. The compound semiconductor light emitting device according to claim 1, wherein said metal thin film electrodes are arranged in a plurality of islands.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32855896A JP3207773B2 (en) | 1996-12-09 | 1996-12-09 | Compound semiconductor light emitting device and method of manufacturing the same |
| US08/871,401 US5977566A (en) | 1996-06-05 | 1997-06-05 | Compound semiconductor light emitter |
| US09/309,598 US6316792B1 (en) | 1996-06-05 | 1999-05-11 | Compound semiconductor light emitter and a method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32855896A JP3207773B2 (en) | 1996-12-09 | 1996-12-09 | Compound semiconductor light emitting device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10173224A JPH10173224A (en) | 1998-06-26 |
| JP3207773B2 true JP3207773B2 (en) | 2001-09-10 |
Family
ID=18211625
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32855896A Expired - Lifetime JP3207773B2 (en) | 1996-06-05 | 1996-12-09 | Compound semiconductor light emitting device and method of manufacturing the same |
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| Country | Link |
|---|---|
| JP (1) | JP3207773B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7683379B2 (en) | 2004-07-30 | 2010-03-23 | Fujikura Ltd. | Light emitting element and manufacturing method thereof |
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- 1996-12-09 JP JP32855896A patent/JP3207773B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7683379B2 (en) | 2004-07-30 | 2010-03-23 | Fujikura Ltd. | Light emitting element and manufacturing method thereof |
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|---|---|
| JPH10173224A (en) | 1998-06-26 |
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