JP3207315B2 - Piezoelectric / electrostrictive film type element - Google Patents
Piezoelectric / electrostrictive film type elementInfo
- Publication number
- JP3207315B2 JP3207315B2 JP03716094A JP3716094A JP3207315B2 JP 3207315 B2 JP3207315 B2 JP 3207315B2 JP 03716094 A JP03716094 A JP 03716094A JP 3716094 A JP3716094 A JP 3716094A JP 3207315 B2 JP3207315 B2 JP 3207315B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- film
- electrostrictive
- electrode film
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 30
- 238000002156 mixing Methods 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 239000007772 electrode material Substances 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 18
- 239000011812 mixed powder Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 144
- 239000000463 material Substances 0.000 description 42
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 239000000843 powder Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- 239000011230 binding agent Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 6
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- -1 that is Substances 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/04—Gramophone pick-ups using a stylus; Recorders using a stylus
- H04R17/08—Gramophone pick-ups using a stylus; Recorders using a stylus signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
Landscapes
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
【０００１】[0001]
【技術分野】本発明は、圧電／電歪膜型素子、中でも主
にインクジェットプリントヘッド、マイクロホン、発音
体（スピーカー等）、各種振動子や発振子、更にはセン
サー、モーター等に好適に用いられるユニモルフ型やバ
イモルフ型等の、本発明者らが特願平３−２０３８３１
号等で明らかにした、屈曲変位を発生させるタイプの圧
電／電歪膜型素子に関するものである。なお、ここで呼
称される素子とは、電気エネルギーを機械エネルギーに
変換、即ち機械的な変位または応力または振動に変換す
る素子の他、その逆の変換を行なう素子をも意味するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitably used for piezoelectric / electrostrictive film type devices, especially ink jet print heads, microphones, sound generators (such as speakers), various vibrators and oscillators, and furthermore, sensors and motors. The inventors of the present invention have disclosed a unimorph type, a bimorph type and the like, as disclosed in Japanese Patent Application No. 3-203831.
The present invention relates to a piezoelectric / electrostrictive film element of the type that generates a bending displacement, as disclosed in Japanese Patent Application Laid-Open No. H10-26095. The element referred to herein means an element that converts electrical energy into mechanical energy, that is, an element that converts mechanical energy into mechanical displacement or stress or vibration, and also an element that performs reverse conversion.
【０００２】[0002]
【背景技術】近年、光学や精密加工等の分野において、
サブミクロンのオーダーで光路長や位置を調整する変位
素子や微小変位を電気的変化として検知する検出素子が
所望されるようになってきており、これに応えるものと
して、強誘電体等の圧電／電歪材料に電界を加えた時に
起こる逆圧電効果や電歪効果に基づくところの変位或い
はその逆の現象を利用した素子である、アクチュエータ
やセンサの如き圧電／電歪素子の開発が進められてい
る。BACKGROUND ART In recent years, in fields such as optics and precision processing,
Displacement elements that adjust the optical path length and position on the order of sub-microns and detection elements that detect minute displacements as electrical changes have become desired. The development of piezoelectric / electrostrictive elements such as actuators and sensors, which are elements utilizing the reverse piezoelectric effect or the displacement based on the electrostrictive effect that occurs when an electric field is applied to an electrostrictive material, or the opposite phenomenon, has been promoted. I have.
【０００３】そして、例えばインクジェットプリントヘ
ッド等においては、そのような圧電／電歪素子構造とし
て、従来から知られているユニモルフ型やバイモルフ型
が、好適に採用されている。また、そこでは、そのよう
な素子を用いたプリンタの印字品質・印字速度等の向上
を図るべく、かかる圧電／電歪素子の小型高密度化、低
電圧作動化、高速応答化を図るための開発が進められて
おり、近年では、振動板となるセラミック基板上に、膜
形成手法により、下部電極、圧電／電歪膜及び上部電極
を順次積層して、圧電／電歪作動部を形成し、それらを
熱処理によって一体化してなる圧電／電歪膜型素子が用
いられるようになってきている。[0003] For example, in an ink jet print head or the like, a conventionally known unimorph type or bimorph type is suitably adopted as such a piezoelectric / electrostrictive element structure. In addition, in order to improve the printing quality, printing speed, etc. of a printer using such an element, the piezoelectric / electrostrictive element is required to have a small size, a high density, a low voltage operation, and a high speed response. In recent years, a lower electrode, a piezoelectric / electrostrictive film, and an upper electrode have been sequentially laminated on a ceramic substrate serving as a diaphragm by a film forming method to form a piezoelectric / electrostrictive operating portion. In addition, a piezoelectric / electrostrictive film type element obtained by integrating them by heat treatment has been used.
【０００４】ところで、そのような膜型の圧電／電歪素
子にあっては、その圧電／電歪作動部を構成する層乃至
は膜の熱処理時等に、セラミック基板上に形成された各
層（膜）の界面において、特に電極膜と圧電／電歪膜の
相互の間で、それらに含まれる成分同士が反応する場合
があり、その結果、圧電／電歪膜の組成変動が生じて、
素子の特性が変化してしまうことがあった。それ故、圧
電／電歪膜型素子において安定した素子特性を得るため
には、圧電／電歪材料中に含まれる鉛化合物と反応し易
いガラス成分を、圧電／電歪材料や電極材料中から取り
除き、膜間の反応を抑制することが有効である。Incidentally, in such a film type piezoelectric / electrostrictive element, each layer formed on the ceramic substrate (heat treatment of a layer or a film constituting the piezoelectric / electrostrictive operating portion) is formed. At the interface of the film), the components contained therein may react with each other, particularly between the electrode film and the piezoelectric / electrostrictive film. As a result, the composition of the piezoelectric / electrostrictive film changes,
The characteristics of the device sometimes changed. Therefore, in order to obtain stable device characteristics in the piezoelectric / electrostrictive film type device, a glass component which easily reacts with a lead compound contained in the piezoelectric / electrostrictive material is removed from the piezoelectric / electrostrictive material or the electrode material. It is effective to remove and suppress the reaction between the films.
【０００５】しかしながら、圧電／電歪材料や電極材料
からガラス成分を取り除いた場合にあっては、圧電／電
歪膜の組成変動が抑制されるものの、電極膜と圧電／電
歪膜、特に下部電極膜と圧電／電歪膜との間の接合性が
低下して、十分な接合性を確保し難くなる問題があっ
た。そして、そのために、それらの膜間で剥離が生じ
て、素子の寿命が低下したり、特性不良等が惹起され
て、素子の信頼性が低下する問題があった。[0005] However, when the glass component is removed from the piezoelectric / electrostrictive material or the electrode material, the composition fluctuation of the piezoelectric / electrostrictive film is suppressed, but the electrode film and the piezoelectric / electrostrictive film, particularly, the lower portion, are removed. There has been a problem that the bondability between the electrode film and the piezoelectric / electrostrictive film is reduced, and it is difficult to secure sufficient bondability. For this reason, there is a problem in that separation occurs between the films, and the life of the element is shortened, or the characteristics are deteriorated, thereby deteriorating the reliability of the element.
【０００６】また、従来の圧電／電歪膜型素子にあって
は、セラミック基板上に形成された平坦な下部電極膜上
に積層して、圧電／電歪膜が形成されていたため、圧電
／電歪膜の熱処理時に、圧電／電歪膜に応力が掛かり易
く、その残留応力によって素子の特性が低下する問題が
あった。更には、圧電／電歪膜に非常に大きな応力が掛
かった場合には、クラックが入る等して欠陥が生じ、歩
留りが低下する問題もあった。In the conventional piezoelectric / electrostrictive film type element, a piezoelectric / electrostrictive film is formed by laminating on a flat lower electrode film formed on a ceramic substrate. During the heat treatment of the electrostrictive film, stress tends to be applied to the piezoelectric / electrostrictive film, and there is a problem that the characteristics of the element are deteriorated due to the residual stress. Furthermore, when a very large stress is applied to the piezoelectric / electrostrictive film, there is a problem that cracks are generated and defects occur, thereby lowering the yield.
【０００７】[0007]
【解決課題】ここにおいて、本発明は、かかる事情を背
景として為されたものであって、その解決課題とすると
ころは、圧電／電歪膜型素子における圧電／電歪作動部
の電極膜と圧電／電歪膜との間の接合性を高めて、素子
の信頼性や寿命を改善することにある。また、熱処理時
に圧電／電歪膜に掛かる応力を低減して、素子の特性を
向上させ、更には、クラック等の欠陥の発生を防止する
ことにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electrode film of a piezoelectric / electrostrictive operating portion in a piezoelectric / electrostrictive film element. An object of the present invention is to improve the bonding property between the piezoelectric / electrostrictive film and improve the reliability and life of the element. Another object of the present invention is to reduce the stress applied to the piezoelectric / electrostrictive film during the heat treatment, improve the characteristics of the element, and prevent the generation of defects such as cracks.
【０００８】[0008]
【解決手段】そして、上記の課題を解決するために、本
発明にあっては、薄肉のセラミック基板と、該セラミッ
ク基板上に膜形成手法により順次積層されて設けられた
下部電極膜、圧電／電歪膜および上部電極膜からなる圧
電／電歪作動部とを備え、少なくともそれら下部電極
膜、圧電／電歪膜が熱処理されて一体的に形成されてな
る圧電／電歪膜型素子にして、前記電極膜のうちの少な
くとも前記下部電極膜の表面が、Ｒmax で表わされる表
面粗さで３μｍ〜１４μｍの範囲となり且つＲａで表わ
される表面粗さにおいて２μｍ以下となるように、形成
されていることを特徴とする圧電／電歪膜型素子を、そ
の要旨とするものである。According to the present invention, there is provided a thin ceramic substrate, a lower electrode film sequentially provided on the ceramic substrate by a film forming method, A piezoelectric / electrostrictive operating portion comprising an electrostrictive film and an upper electrode film, and a piezoelectric / electrostrictive film type element in which at least the lower electrode film and the piezoelectric / electrostrictive film are heat-treated to be integrally formed. The surface of at least the lower electrode film of the electrode films is formed to have a surface roughness represented by Rmax in the range of 3 μm to 14 μm and a surface roughness represented by Ra of 2 μm or less. A gist is a piezoelectric / electrostrictive film element characterized by the above.
【０００９】また、かかる本発明に従う圧電／電歪膜型
素子において、有利には、前記下部電極膜は、異なる平
均粒子径を有する２種以上の固体粒子を混合した混合粉
末を電極材料とした導電体ペーストを用いて形成される
こととなる。In the piezoelectric / electrostrictive film type device according to the present invention, the lower electrode film is preferably made of a mixed powder obtained by mixing two or more types of solid particles having different average particle diameters. It will be formed using a conductor paste.
【００１０】さらに、本発明において、有利には、下部
電極膜は、表面に開口する開気孔を有するポーラスな電
極膜とされることとなる。Further, in the present invention, advantageously, the lower electrode film is a porous electrode film having open pores opened on the surface.
【００１１】[0011]
【作用・効果】要するに、本発明に係る圧電／電歪膜型
素子にあっては、圧電／電歪作動部を構成する電極膜の
うちの少なくとも下部電極膜の表面が、Ｒmax で表わさ
れる表面粗さで３μｍ〜１４μｍの範囲となり且つＲａ
で表わされる表面粗さにおいて２μｍ以下となる範囲
で、平坦性の良い表面をベースとして、部分的に微小な
凸状若しくは凹状の箇所が存在するように、形成され
る。それ故、その上に圧電／電歪膜を膜形成する際に
は、その一部が、かかる凹凸に入り込むこととなり、以
て圧電／電歪膜の組成に影響を与えることなく、電極膜
と圧電／電歪膜との接触面積が大きく取れ、また良好な
アンカー効果が発揮され得て、電極膜と圧電／電歪膜と
の接合性が十分に確保され得る。従って、信頼性の高い
素子を構成することが可能となり、また圧電／電歪作動
部の膜間の剥離等を防止して、素子寿命を効果的に改善
することができる。In short, in the piezoelectric / electrostrictive film type element according to the present invention, at least the surface of the lower electrode film among the electrode films constituting the piezoelectric / electrostrictive operating portion has a surface represented by Rmax. The roughness ranges from 3 μm to 14 μm and Ra
In the range where the surface roughness represented by the following formula is 2 μm or less, the surface is formed such that there are partially minute convex or concave portions based on the surface having good flatness. Therefore, when a piezoelectric / electrostrictive film is formed thereon, a part of the film enters into such irregularities, and thus, does not affect the composition of the piezoelectric / electrostrictive film. A large contact area with the piezoelectric / electrostrictive film can be obtained, a good anchoring effect can be exhibited, and the bondability between the electrode film and the piezoelectric / electrostrictive film can be sufficiently ensured. Therefore, a highly reliable element can be formed, and separation between films of the piezoelectric / electrostrictive operation section can be prevented, and the element life can be effectively improved.
【００１２】さらに、電極膜の表面が、平坦性の良い表
面をベースとして、部分的に凸状若しくは凹状の箇所が
存在するように、形成されるところから、かかる部分的
な凹凸の存在によって、熱処理時に圧電／電歪膜に掛か
る応力が有効に緩和される。それ故、残留応力の影響を
低減でき、素子の性能（例えば変位）を向上させること
が可能となる。また、クラック等の欠陥が生じ難くな
り、歩留りが良くなるという特徴を有している。Further, since the surface of the electrode film is formed so as to have a partially convex or concave portion based on the surface having good flatness, the presence of such partial unevenness The stress applied to the piezoelectric / electrostrictive film during the heat treatment is effectively reduced. Therefore, the influence of the residual stress can be reduced, and the performance (for example, displacement) of the element can be improved. Further, it is characterized in that defects such as cracks hardly occur and the yield is improved.
【００１３】また、電極膜を、異なる平均粒子径を有す
る２種以上の固体粒子状の電極材料を混合した混合粉末
をペースト化した導電体ペーストを用いて形成すること
により、該電極膜の表面粗さを有利に調整することがで
きる。Further, the electrode film is formed by using a conductive paste obtained by forming a mixed powder obtained by mixing two or more kinds of solid particulate electrode materials having different average particle diameters into a paste. The roughness can be adjusted advantageously.
【００１４】[0014]
【具体的構成】そして、本発明においては、圧電／電歪
膜型素子の圧電／電歪作動部を構成する電極膜のうちの
少なくとも下部電極膜の表面が、Ｒmax で表わされる表
面粗さで３〜１４μｍの範囲となり且つＲａで表わされ
る表面粗さにおいて２μｍ以下となるように、形成され
るが、より好ましくは、Ｒmax は５〜１０μｍ、Ｒａは
１μｍ以下とされる。また、それらＲmax 、Ｒａが上記
範囲より大きくなると、電極膜上に形成された圧電／電
歪膜の膜厚のばらつきが大きくなることから、圧電／電
歪膜に掛かる電界にばらつきが生じ、特性の低下が惹起
されると共に、電界が部分的に集中するようになって絶
縁破壊が起こり易くなり、電気絶縁的な信頼性が低下す
ることとなる。更に、電極膜と圧電／電歪膜の間に気孔
ができ易くなり、かえって接合強度が低下するようにな
る。なお、Ｒmax は工業製品の表面粗さを表わす最大高
さであり、Ｒａは工業製品の表面粗さを表わす中心線平
均粗さである。Specifically, in the present invention, at least the surface of the lower electrode film among the electrode films constituting the piezoelectric / electrostrictive operating portion of the piezoelectric / electrostrictive film type element has a surface roughness represented by Rmax. It is formed so as to have a range of 3 to 14 μm and a surface roughness represented by Ra of 2 μm or less. More preferably, Rmax is 5 to 10 μm and Ra is 1 μm or less. If Rmax and Ra are larger than the above ranges, the variation in the thickness of the piezoelectric / electrostrictive film formed on the electrode film becomes large, so that the electric field applied to the piezoelectric / electrostrictive film varies, resulting in a characteristic change. Is caused, and the electric field is partially concentrated, so that the dielectric breakdown is easily caused, and the reliability of the electrical insulation is reduced. Further, pores are easily formed between the electrode film and the piezoelectric / electrostrictive film, and the bonding strength is rather lowered. Here, Rmax is the maximum height representing the surface roughness of the industrial product, and Ra is the center line average roughness representing the surface roughness of the industrial product.
【００１５】ところで、このような電極膜を形成する電
極材料は、高温酸化雰囲気に耐えられる導体であれば、
特に規制されるものではなく、例えば金属単体であって
も、合金であっても良く、また絶縁性セラミックス（例
えば、ＴｉＯ2 、Ａｌ2 Ｏ3、ＺｒＯ2 等）と金属や合
金との混合物であっても、更には導電性セラミックスで
あっても、何ら差し支えない。尤も、より好ましくは、
白金、パラジウム、ロジウム等の高融点貴金属類、或い
は銀−パラジウム、銀−白金、白金−パラジウム等の合
金を主成分とする電極材料、或いは白金とセラミック基
板材料や圧電／電歪材料とのサーメット材料が、好適に
用いられる。その中でも、更に好ましくは、白金のみ、
若しくは白金系の合金を主成分とする材料が望ましい。
また、セラミック基板とのぬれ性を向上させる目的で、
酸化ビスマス等を電極材料に加えることも、有効であ
る。なお、電極材料中に添加せしめるセラミック基板材
料の割合は５〜３０体積％程度が好ましく、また圧電／
電歪材料の割合は５〜２０体積％程度であることが好ま
しい。但し、ガラスを添加することは、熱処理中に電極
膜と圧電／電歪膜が反応し易くなり、素子特性を低下さ
せる原因ともなり易いため、避けることが望ましい。By the way, if the electrode material for forming such an electrode film is a conductor that can withstand a high-temperature oxidizing atmosphere,
It is not particularly limited, and may be, for example, a simple metal or an alloy, or a mixture of an insulating ceramic (eg, TiO 2 , Al 2 O 3 , ZrO 2 ) and a metal or alloy. There is no problem even if it is a conductive ceramic. However, more preferably,
Electrode material mainly composed of high melting point noble metals such as platinum, palladium and rhodium, or alloys such as silver-palladium, silver-platinum and platinum-palladium, or cermet of platinum and ceramic substrate material or piezoelectric / electrostrictive material Materials are preferably used. Among them, more preferably, only platinum,
Alternatively, a material mainly containing a platinum-based alloy is desirable.
Also, for the purpose of improving the wettability with the ceramic substrate,
It is also effective to add bismuth oxide or the like to the electrode material. The ratio of the ceramic substrate material added to the electrode material is preferably about 5 to 30% by volume.
The ratio of the electrostrictive material is preferably about 5 to 20% by volume. However, it is desirable to avoid adding glass, because the electrode film and the piezoelectric / electrostrictive film tend to react during the heat treatment, which tends to cause deterioration of device characteristics.
【００１６】そして、通常、それら電極材料は、固体粒
子として、所定の有機バインダーと共に有機溶剤に添加
され、導電体ペーストとして調合されて、使用されるこ
ととなる。特に、本発明においては、電極膜の表面粗さ
を前記範囲とするために、導電体ペースト中に、一般的
な平均粒子径を有する固体粒子と共に、それより平均粒
子径の大きな固体粒子若しくは複数の固体粒子が凝集し
て生成した凝集粒子が存在するようにするのである。Usually, these electrode materials are added to an organic solvent together with a predetermined organic binder as solid particles, and are prepared and used as a conductor paste. In particular, in the present invention, in order to keep the surface roughness of the electrode film in the above range, the solid particles having a general average particle size and the solid particles having a larger average particle size in the conductive paste are used together with the solid particles having a general average particle size. Thus, the aggregated particles formed by aggregating the solid particles are made to exist.
【００１７】具体的に、そのような導電体ペーストを調
合する方法としては、（Ａ）異なる平均粒子径を有する
２種以上の固体粒子を混合した混合粉末をペースト化す
る方法、（Ｂ）所定の平均粒子径を有する一種の固体粒
子の分散状態を変えて、２種以上のペーストを調合し、
それらを混合して、上記（Ａ）方法と同性状の導電体ペ
ーストを得る方法がある。Specifically, such a method of preparing such a conductive paste includes (A) a method of forming a paste of a mixed powder obtained by mixing two or more kinds of solid particles having different average particle diameters, and (B) a method of forming a paste. By changing the dispersion state of one kind of solid particles having an average particle diameter of, and mixing two or more pastes,
There is a method of obtaining a conductive paste having the same properties as the above method (A) by mixing them.
【００１８】その中で、（Ａ）の方法を実施する場合に
は、混合する固体粒子は、それぞれ０．１μｍ〜８μｍ
の範囲の間に平均粒子径を有するものを使用することが
望ましいが、ベースとなる固体粒子としては、平均粒子
径０．２μｍ〜２μｍ、好ましくは０．５μｍ〜１．５
μｍの粒子を用いることが望ましい。また、かかるベー
ス粒子に混合される混合用粒子、即ちベース粒子より平
均粒子径の大きな固体粒子としては、２μｍ〜８μｍ、
好ましくは２．５μｍ〜５μｍ程度の平均粒子径を有す
る粒子を用いることが望ましい。そして、それらベース
粒子と混合用粒子を所定の割合で混合して得た混合粉末
を用いて、通常の方法に従ってペースト化するのであ
る。Among them, when the method (A) is carried out, the solid particles to be mixed are each 0.1 μm to 8 μm.
It is desirable to use those having an average particle diameter in the range of, but the solid particles serving as bases have an average particle diameter of 0.2 μm to 2 μm, preferably 0.5 μm to 1.5 μm.
It is desirable to use particles of μm. Further, as mixing particles to be mixed with such base particles, that is, solid particles having a larger average particle diameter than the base particles, 2 μm to 8 μm,
Preferably, particles having an average particle diameter of about 2.5 μm to 5 μm are used. Then, using the mixed powder obtained by mixing the base particles and the mixing particles at a predetermined ratio, the mixture is pasted according to a usual method.
【００１９】また、前記（Ｂ）の方法では、例えば０．
２〜２μｍの平均粒子径を有する一種類の固体粒子を用
いて、該粒子を均一に分散させたベースペーストを調合
する一方、該粒子の分散性が不十分な混合用ペーストを
調合し、それらを所定の割合で混合することにより、目
的とする導電体ペーストを得る。そして、混合用ペース
ト中に多数形成される凝集粒子を、上記（Ａ）の方法に
おける粒子径の大きな粒子として用いるのである。な
お、固体粒子の分散性の調整は、一般に、電極材料（固
体粒子）と有機バインダと溶剤を混合してペーストを調
合する際の調合時間、温度等を調節して、行なわれるこ
ととなる。また、そのようなペーストにおける固体粒子
の分散度合は、一般に、グラインドゲージ等を用いて評
価されることとなる。Further, in the method (B), for example,
Using one type of solid particles having an average particle diameter of 2 to 2 μm, a base paste in which the particles are uniformly dispersed is prepared, while a dispersing agent having insufficient dispersibility of the particles is prepared, and a mixture paste is prepared. Are mixed at a predetermined ratio to obtain a target conductive paste. Then, a large number of aggregated particles formed in the mixing paste are used as particles having a large particle diameter in the method (A). The dispersibility of the solid particles is generally adjusted by adjusting the mixing time, temperature, and the like when mixing the electrode material (solid particles), the organic binder, and the solvent to prepare the paste. In addition, the degree of dispersion of solid particles in such a paste is generally evaluated using a grind gauge or the like.
【００２０】そして、上記２種類の方法（Ａ），（Ｂ）
において、ベース粒子若しくはベースペーストと混合用
粒子若しくは混合用ペーストとの混合割合は、電極膜の
表面粗さを前記範囲とするうえで、重量比で５０〜９０
％：５０〜１０％とすることが好ましい。The above two methods (A) and (B)
In the above, the mixing ratio of the base particles or the base paste to the mixing particles or the mixing paste is 50 to 90 in weight ratio in order to keep the surface roughness of the electrode film in the above range.
%: Preferably 50 to 10%.
【００２１】さらに、電極膜の表面粗さを前記範囲にす
るうえで、上記２種類の方法（Ａ），（Ｂ）に併用し
て、電極膜にその表面に開口する開気孔を形成し、ポー
ラスな電極膜とすることも、効果的である。なお、開気
孔率としては、好ましくは体積比で２５％以下、更に好
ましくは２〜１５％となるように形成することが効果的
である。何故なら、開気孔率が大き過ぎると、電極膜の
面積への影響が大きくなる他、電極膜の電気伝導度の点
にも影響が出るからである。Further, in order to keep the surface roughness of the electrode film within the above range, open pores are formed on the surface of the electrode film by using the two methods (A) and (B) in combination. It is also effective to form a porous electrode film. In addition, it is effective to form the porosity so that it is preferably 25% or less by volume, more preferably 2 to 15%. The reason for this is that if the open porosity is too large, the effect on the area of the electrode film becomes large and also on the electrical conductivity of the electrode film.
【００２２】なお、ポーラスな電極膜を形成するには、
（ａ）電極材料（固体粒子）と有機バインダと溶剤を混
合してペーストを調合する際に、電極材料の配合割合を
小さくする、（ｂ）電極材料と有機バインダと溶剤を混
合物してペーストを調合する際に、調合時間、温度等を
調節し、分散性を故意に悪くさせる、（ｃ）電極膜の熱
処理時間、温度を調節し、電極材料を凝集させる等の方
法がある。In order to form a porous electrode film,
(A) When preparing a paste by mixing an electrode material (solid particles), an organic binder, and a solvent, reduce the mixing ratio of the electrode material. (B) Mixing the electrode material, the organic binder, and the solvent to form a paste. At the time of dispensing, there are methods such as adjusting dispensing time, temperature and the like to intentionally deteriorate dispersibility, and (c) adjusting the heat treatment time and temperature of the electrode film to aggregate the electrode material.
【００２３】かくして調合された導電体ペーストを用い
て、圧電／電歪作動部を構成する電極膜のうち少なくと
も下部電極膜を形成することにより、該電極膜の表面粗
さをＲmax ：３〜１４μｍ且つＲａ：２μｍ以下とする
ことができるのである。そして、下部電極膜以外の上部
電極膜、またそれら電極膜のリード部や実装部、配線部
等の導電膜を形成する場合には、上述した下部電極膜と
同様の電極材料を用いても良く、またそれとは異なる通
常の金や銀、銀−パラジウム等を主成分とする導電材料
を用いても良い。By forming at least the lower electrode film among the electrode films constituting the piezoelectric / electrostrictive operating portion using the conductive paste thus prepared, the surface roughness of the electrode film is reduced to Rmax: 3 to 14 μm. And Ra: 2 μm or less can be achieved. Then, in the case of forming an upper electrode film other than the lower electrode film and a conductive film such as a lead portion, a mounting portion, and a wiring portion of the electrode film, the same electrode material as the above-described lower electrode film may be used. Alternatively, a different conductive material mainly composed of gold, silver, silver-palladium, or the like may be used.
【００２４】なお、ここでいう下部電極膜とは、例えば
図１に示される如き圧電／電歪膜型素子において、セラ
ミック基板１０の薄肉部位１０ａの上に形成される下部
電極膜１２、圧電／電歪膜１４、上部電極膜１６より成
る三層構造の圧電／電歪作動部１８における下部電極膜
１２を意味する。換言すれば、下部電極膜１２より一体
的に延び出した形態で形成されたリード部２０等の、そ
の表面上に圧電／電歪膜１４が形成されない導電膜は、
本発明でいうところの下部電極膜に含まれるものではな
い。The lower electrode film referred to here is, for example, a lower electrode film 12 formed on a thin portion 10a of a ceramic substrate 10 in a piezoelectric / electrostrictive film type element as shown in FIG. The lower electrode film 12 in the piezoelectric / electrostrictive operation section 18 having a three-layer structure including the electrostrictive film 14 and the upper electrode film 16. In other words, a conductive film in which the piezoelectric / electrostrictive film 14 is not formed on the surface thereof, such as the lead portion 20 formed in a form integrally extending from the lower electrode film 12,
It is not included in the lower electrode film in the present invention.
【００２５】そして、電極膜１２，１６は、通常の膜形
成手法に従って、具体的には前述した如き導電体ペース
トを用いて従来から公知の厚膜手法により、或いは前述
の電極材料を用いた従来から公知の薄膜手法に従って、
形成されるが、中でも、下部電極膜１２の形成に関して
は、スクリーン印刷、スプレー、ディッピング、塗布等
の厚膜手法が好ましく採用され、一般に１〜３０μｍ、
望ましくは１〜２０μｍの厚さにおいて形成されること
となる。また、上部電極膜１６にあっても、同様な厚膜
手法の他、スパッタリング、イオンビーム、真空蒸着、
イオンプレーディング、ＣＶＤ、メッキ等の薄膜手法も
好適に採用され、それは、一般に２０μｍ以下、好まし
くは５μｍ以下の厚さにおいて形成されることとなる。The electrode films 12 and 16 are formed by a conventional film forming method, specifically, by a conventionally known thick film method using a conductor paste as described above, or by a conventional method using the above-described electrode material. According to a known thin film method,
Among them, among them, regarding the formation of the lower electrode film 12, a thick film technique such as screen printing, spraying, dipping, coating or the like is preferably adopted, and generally 1 to 30 μm,
Desirably, it is formed in a thickness of 1 to 20 μm. Also, for the upper electrode film 16, in addition to the same thick film method, sputtering, ion beam, vacuum deposition,
Thin-film techniques such as ion plating, CVD, plating, etc., are also suitably employed, and are generally formed in a thickness of 20 μm or less, preferably 5 μm or less.
【００２６】また、圧電／電歪膜１４も、従来と同様な
圧電／電歪材料を用いて、通常の膜形成手法によって形
成されることとなるが、有利には、上記電極膜の形成の
場合と同様な厚膜手法が好適に採用される。そして、こ
の圧電／電歪膜１４の厚さとしては、低作動電圧で大き
な変位等を得るために、好ましくは５０μｍ以下、更に
好ましくは３〜４０μｍとされる。The piezoelectric / electrostrictive film 14 is also formed by the usual film forming method using the same piezoelectric / electrostrictive material as in the prior art. The same thick film technique as in the case is suitably adopted. The thickness of the piezoelectric / electrostrictive film 14 is preferably 50 μm or less, more preferably 3 to 40 μm, in order to obtain a large displacement or the like at a low operating voltage.
【００２７】ところで、かかる圧電／電歪膜１４を与え
る圧電／電歪材料としては、好ましくは、ジルコン酸チ
タン酸鉛（ＰＺＴ系）を主成分とする材料、マグネシウ
ムニオブ酸鉛（ＰＭＮ系）を主成分とする材料、ニッケ
ルニオブ酸鉛（ＰＮＮ系）を主成分とする材料、マンガ
ンニオブ酸鉛を主成分とする材料、アンチモンスズ酸鉛
を主成分とする材料、亜鉛ニオブ酸鉛を主成分とする材
料、チタン酸鉛を主成分とする材料、ジルコン酸鉛を主
成分とする材料、更にはこれらの複合材料等が用いられ
る。また、このような圧電／電歪材料（複合材料も含
む）に、ランタン、バリウム、ニオブ、亜鉛、セリウ
ム、カドミウム、クロム、コバルト、アンチモン、鉄、
イットリウム、タンタル、タングステン、ニッケル、マ
ンガン、リチウム、ストロンチウム、カルシウム、ビス
マス等の酸化物やそれらの他の化合物を添加物として含
有せしめた材料、例えば、ＰＬＺＴ系となるように、前
記ＰＺＴ系を主成分とする材料に上記の如き所定の添加
物を適宜に加えたものも、好適に使用される。なお、ガ
ラス材料の添加は避けるべきである。何故ならば、ＰＺ
Ｔ系等の鉛系圧電／電歪材料はガラスと反応し易いため
に、所望の圧電／電歪膜組成への制御が困難となり、作
動特性のバラツキ並びに低下を惹起するからである。As the piezoelectric / electrostrictive material for providing the piezoelectric / electrostrictive film 14, preferably, a material mainly composed of lead zirconate titanate (PZT) or lead magnesium niobate (PMN) is used. Main component material, Lead nickel niobate (PNN) -based material, Lead manganese niobate-based material, Lead antimony stannate-based material, Lead zinc niobate-based material , A material containing lead titanate as a main component, a material containing lead zirconate as a main component, and a composite material thereof. Such piezoelectric / electrostrictive materials (including composite materials) include lanthanum, barium, niobium, zinc, cerium, cadmium, chromium, cobalt, antimony, iron,
Materials containing oxides such as yttrium, tantalum, tungsten, nickel, manganese, lithium, strontium, calcium, bismuth and other compounds as additives, for example, the PZT-based material so as to be a PLZT-based material A material obtained by appropriately adding a predetermined additive as described above to a material as a component is also preferably used. Note that the addition of a glass material should be avoided. Because PZ
This is because a lead-based piezoelectric / electrostrictive material such as a T-based material easily reacts with glass, making it difficult to control the composition of a desired piezoelectric / electrostrictive film, causing variations and deterioration in operating characteristics.
【００２８】そして、これらの圧電／電歪材料の中で
も、マグネシウムニオブ酸鉛とジルコン酸鉛とチタン酸
鉛とからなる成分を主成分とする材料、若しくはニッケ
ルニオブ酸鉛とマグネシウムニオブ酸鉛とジルコン酸鉛
とチタン酸鉛とからなる成分を主成分とする材料が好ま
しい。更に、その中でも特にマグネシウムニオブ酸鉛と
ジルコン酸鉛とチタン酸鉛とからなる成分を主成分とす
る材料が、その熱処理中における基板材料との反応が特
に少ないことから、成分の偏析が起き難く、組成を保つ
ための処理が好適に行なわれ得、目的とする組成及び結
晶構造が得られ易い上、高い圧電定数を有することか
ら、有利に用いられ、スクリーン印刷、スプレー、ディ
ッピング、塗布等の厚膜形成手法で圧電／電歪膜を形成
する場合の材料として推奨される。なお、多成分系圧電
／電歪材料の場合においては、成分の組成によって圧電
特性が変化するが、本発明で好適に採用されるマグネシ
ウムニオブ酸鉛−ジルコン酸鉛−チタン酸鉛の３成分系
材料では、擬立方晶−正方晶−菱面体晶の相境界付近の
組成が好ましく、特にマグネシウムニオブ酸鉛：１５モ
ル％〜５０モル％、ジルコン酸鉛：１０モル％〜４５モ
ル％、チタン酸鉛：３０モル％〜４５モル％の組成が、
高い圧電定数と電気機械結合係数を有することから、有
利に採用される。Among these piezoelectric / electrostrictive materials, a material mainly composed of components of lead magnesium niobate, lead zirconate and lead titanate, or lead nickel niobate, lead magnesium niobate and zirconate A material mainly containing a component composed of lead oxide and lead titanate is preferable. Further, among them, particularly, a material mainly containing a component composed of lead magnesium niobate, lead zirconate, and lead titanate has a particularly small reaction with the substrate material during the heat treatment, so that segregation of the component hardly occurs. A treatment for maintaining the composition can be suitably performed, a desired composition and a crystal structure can be easily obtained, and a high piezoelectric constant is used. Therefore, it is advantageously used for screen printing, spraying, dipping, coating, and the like. It is recommended as a material for forming a piezoelectric / electrostrictive film by a thick film forming technique. In the case of a multi-component piezoelectric / electrostrictive material, although the piezoelectric characteristics change depending on the composition of the components, the three-component system of lead magnesium niobate-lead zirconate-lead titanate preferably employed in the present invention. The material preferably has a composition near the phase boundary of pseudo-cubic-tetragonal-rhombohedral, particularly lead magnesium niobate: 15 mol% to 50 mol%, lead zirconate: 10 mol% to 45 mol%, titanic acid Lead: a composition of 30 mol% to 45 mol%
It is advantageously employed because it has a high piezoelectric constant and an electromechanical coupling coefficient.
【００２９】さらに、セラミック基板１０としては、公
知の各種のものが用いられ得るが、特に、本願発明者ら
が特願平３−２０３８３１号や特願平４−９４７４２号
等において明らかにした如き、酸化イットリウム、酸化
イッテルビウム、酸化セリウム、酸化カルシウム及び酸
化マグネシウムからなる群より選ばれた少なくとも一つ
の化合物の含有によって、その結晶相が安定化乃至は部
分安定化された酸化ジルコニウムを主成分とする材料
が、好ましく使用される。何故なら、かかるセラミック
基板は、薄い板厚においても、機械的強度が大きく、高
靭性であるからであり、また圧電／電歪材料との間で惹
起される熱処理時の応力が小さく、更には圧電／電歪材
料との化学的な反応性が小さい等の特徴を有しているか
らである。なお、かかるセラミック基板１０の前記圧電
／電歪作動部１８が設けられる薄肉部位１０ａの厚さと
しては、素子の高速応答性と大きな変位を得るために、
一般に５０μｍ以下、好ましくは３０μｍ以下、更に好
ましくは１０μｍ以下とされることとなる。As the ceramic substrate 10, various known substrates can be used. In particular, the inventors of the present invention disclosed in Japanese Patent Application Nos. 3-203831 and 4-94742. By containing at least one compound selected from the group consisting of yttrium oxide, ytterbium oxide, cerium oxide, calcium oxide and magnesium oxide, the crystal phase of which is stabilized or partially stabilized, containing zirconium oxide as a main component. Materials are preferably used. This is because such a ceramic substrate has high mechanical strength and high toughness even at a small plate thickness, and has a small stress at the time of heat treatment induced between the ceramic substrate and the piezoelectric / electrostrictive material. This is because they have characteristics such as low chemical reactivity with the piezoelectric / electrostrictive material. The thickness of the thin portion 10a of the ceramic substrate 10 where the piezoelectric / electrostrictive operation section 18 is provided is selected in order to obtain high-speed response and large displacement of the element.
Generally, the thickness is 50 μm or less, preferably 30 μm or less, and more preferably 10 μm or less.
【００３０】そして、かくしてセラミック基板１０とそ
の上に形成された電極膜１２，１６及び圧電／電歪膜１
４とを一体化するべく、熱処理操作（焼成）が行なわれ
る。その際、電極膜の表面形状を本発明の構造とするた
めには、熱処理（焼成）温度は９００℃〜１４００℃の
範囲が好ましく、より好ましくは１０００℃〜１４００
℃の範囲の温度が望ましい。このような熱処理操作は、
所定の膜形成手法に従って形成される下部電極膜１２、
圧電／電歪膜１４、上部電極膜１６の形成の都度、換言
すれば膜毎に実施される他、下部電極膜１２及び圧電／
電歪膜１４を形成した後、或いは更に上部電極膜１６を
形成した後、それら２種或いは３種の膜の熱処理を同時
に行なうことも可能である。また、上部電極膜１６を薄
膜手法にて形成した場合にあっては、その熱処理を必要
としないことがある。Then, the ceramic substrate 10 and the electrode films 12, 16 and the piezoelectric / electrostrictive film 1 formed thereon are thus formed.
A heat treatment operation (firing) is performed so as to integrate 4 with the heat treatment. At that time, in order to make the surface shape of the electrode film the structure of the present invention, the heat treatment (sintering) temperature is preferably in the range of 900C to 1400C, more preferably 1000C to 1400C.
Temperatures in the range of ° C. are desirable. Such a heat treatment operation
A lower electrode film 12 formed according to a predetermined film forming technique;
Each time the piezoelectric / electrostrictive film 14 and the upper electrode film 16 are formed, in other words, for each film, the process is carried out.
After the electrostrictive film 14 is formed or the upper electrode film 16 is further formed, it is possible to simultaneously perform the heat treatment of these two or three kinds of films. Further, when the upper electrode film 16 is formed by the thin film method, the heat treatment may not be required.
【００３１】[0031]
【実施例】以下に、本発明の代表的な実施例を示し、本
発明を更に具体的に明らかにすることとするが、本発明
が、そのような実施例の記載によって、何等の制約をも
受けるものでないことは、言うまでもないところであ
る。また、本発明には、以下の実施例の他にも、更には
上記の具体的記述以外にも、本発明の趣旨を逸脱しない
限りにおいて、当業者の知識に基づいて種々なる変更、
修正、改良等を加え得るものであることが、理解される
べきである。Hereinafter, typical examples of the present invention will be described to clarify the present invention more specifically. However, the present invention imposes no restrictions on the description of such examples. It goes without saying that you don't receive anything. In addition, the present invention, in addition to the following examples, and in addition to the above-described specific description, various modifications based on the knowledge of those skilled in the art, unless departing from the spirit of the present invention,
It should be understood that modifications, improvements and the like can be made.
【００３２】先ず、各種平均粒子径のＰｔ粉末を用い
て、下記調合手法に従って、５種の導電体ペーストを調
合した。なお、それらペーストの調合に際して、バイン
ダとしてはアクリル系バインダが、また有機溶剤として
はテルピネオールが、何れも用いられた。 実施例１：平均粒子径が０．８μｍのＰｔ粉末と３μｍ
のＰｔ粉末とを、重量比で４：１の割合で混合せしめ、
そしてその混合粉末に前記バインダ及び有機溶剤を添加
して、１時間混合せしめることにより、目的とする導電
体ペーストを得た。 実施例２：平均粒子径が１．５μｍのＰｔ粉末に上記の
バインダ及び溶剤を加え、１時間の混合時間にて得られ
たペーストと、１０分間の混合時間で得られたペースト
とを、２：１の割合（重量基準）で混合して、目的とす
る導電体ペーストを得た。 実施例３：平均粒子径が０．９μｍのＰｔ粉末に上記の
バインダ及び溶剤を加え、１時間の混合時間にて得られ
たペーストと、１０分間の混合時間で得られたペースト
とを、３：１の割合（重量基準）で混合して、目的とす
る導電体ペーストを得た。 比較例１：平均粒子径が６μｍのＰｔ粉末に上記バイン
ダと溶剤とを加えて、１時間混合せしめることにより、
目的とする導電体ペーストを得た。 比較例２：平均粒子径が０．５μｍのＰｔ粉末に上記バ
インダと溶剤とを加えて、１時間混合せしめることによ
り、目的とする導電体ペーストを得た。First, five types of conductive pastes were prepared using Pt powders having various average particle sizes according to the following preparation method. In preparing these pastes, an acrylic binder was used as a binder, and terpineol was used as an organic solvent. Example 1: Pt powder having an average particle size of 0.8 μm and 3 μm
And Pt powder at a weight ratio of 4: 1.
Then, the binder and the organic solvent were added to the mixed powder and mixed for 1 hour to obtain a target conductor paste. Example 2: The above-mentioned binder and solvent were added to Pt powder having an average particle size of 1.5 μm, and the paste obtained by mixing for 1 hour and the paste obtained by mixing for 10 minutes were mixed with each other. : 1 (weight basis) to obtain the desired conductive paste. Example 3: The above-mentioned binder and solvent were added to Pt powder having an average particle diameter of 0.9 μm, and the paste obtained in a mixing time of 1 hour and the paste obtained in a mixing time of 10 minutes were mixed with each other. : 1 (weight basis) to obtain the desired conductive paste. Comparative Example 1: By adding the binder and the solvent to Pt powder having an average particle diameter of 6 μm and mixing them for 1 hour,
The desired conductor paste was obtained. Comparative Example 2: The target binder paste was obtained by adding the binder and the solvent to Pt powder having an average particle size of 0.5 μm and mixing for 1 hour.
【００３３】そして、上記の各種導電体ペーストを用い
て、図１に示される如き構造の圧電／電歪膜型素子を、
それぞれ作製した。即ち、薄肉部１０ａの厚さが１０μ
ｍのセラミック基板１０を、イットリアにて部分安定化
せしめたジルコニア材料を用いて形成し、次いでその薄
肉部１０ａ上に、０．４ｍｍ×２ｍｍの大きさの圧電／
電歪作動部１８を形成した。なお、この圧電／電歪作動
部１８の形成には、先ず、上記の各種導電体ペーストを
用いて、セラミック基板１０の薄肉部１０ａ上に下部電
極層を形成し、１３００℃の温度で焼成（熱処理）する
ことにより、下記表１に示される膜厚を有する下部電極
膜１２を形成した後、その上に、更に、マグネシウムニ
オブ酸鉛とジルコン酸鉛とチタン酸鉛からなる圧電／電
歪材料を用いて、圧電／電歪層を形成し、次いで１２５
０℃の焼成（熱処理）を行なうことにより、膜厚が３０
μｍの圧電／電歪膜１４を形成し、その後、かかる圧電
／電歪層１４上に、Ａｕをスパッタリングして、膜厚
０．２μｍの上部電極膜１６を形成する手法を採用し
た。Then, a piezoelectric / electrostrictive film element having a structure as shown in FIG.
Each was produced. That is, the thickness of the thin portion 10a is 10 μm.
The ceramic substrate 10 is formed using a zirconia material partially stabilized by yttria, and a 0.4 mm × 2 mm piezoelectric /
The electrostriction operation part 18 was formed. To form the piezoelectric / electrostrictive operating portion 18, first, a lower electrode layer is formed on the thin portion 10a of the ceramic substrate 10 using the above-described various conductive pastes and fired at a temperature of 1300 ° C. Heat treatment) to form a lower electrode film 12 having a film thickness shown in Table 1 below, and further thereon a piezoelectric / electrostrictive material comprising lead magnesium niobate, lead zirconate and lead titanate To form a piezoelectric / electrostrictive layer,
By baking (heat treatment) at 0 ° C., the film thickness becomes 30
A method of forming a piezoelectric / electrostrictive film 14 having a thickness of μm and then sputtering Au on the piezoelectric / electrostrictive layer 14 to form an upper electrode film 16 having a thickness of 0.2 μm was employed.
【００３４】かくして得られた各種素子について、下部
電極膜１２と同じペーストで形成されたリード部２０の
表面粗さ（Ｒmax ，Ｒａ）を測定し、その測定値を下部
電極膜１２の表面粗さとすると共に、各素子に３０Ｖの
電圧を印加した時の変位量を測定し、それらの結果を、
下記表１に示した。また、各素子における圧電／電歪膜
１４のクラック発生の有無についても調べ、１０００個
の素子におけるクラック発生素子の割合を、クラック発
生率として、下記表１に併せ示した。With respect to the various devices thus obtained, the surface roughness (Rmax, Ra) of the lead portion 20 formed with the same paste as the lower electrode film 12 was measured, and the measured value was compared with the surface roughness of the lower electrode film 12. And at the same time, measure the amount of displacement when a voltage of 30 V is applied to each element, and calculate the results,
The results are shown in Table 1 below. The presence / absence of cracks in the piezoelectric / electrostrictive film 14 in each element was also examined, and the ratio of crack-occurring elements in 1,000 elements was also shown in Table 1 below as the crack occurrence rate.
【００３５】[0035]
【表１】 ＊粉末粒子径はペースト調合時に使用した電極材料（Ｐ
ｔ粉末）の平均粒子径を表わす。 ＊圧電／電歪膜のクラック発生率は、１０００個の素子
におけるクラック発生素子の割合で示されている。[Table 1] * Powder particle size depends on the electrode material (P
t powder). * The crack generation rate of the piezoelectric / electrostrictive film is indicated by the ratio of crack generation elements in 1000 elements.
【００３６】また、上記と同様にして、それぞれ異なる
平均粒子径を有するＰｔ粉末を使用して調合された４種
類の導電体ペーストを用いて、下記表２に示される如き
下部電極膜１２を備えた各種の圧電／電歪膜型素子を作
製した。In the same manner as described above, the lower electrode film 12 as shown in Table 2 below is provided using four types of conductive pastes prepared using Pt powders having different average particle diameters. Various types of piezoelectric / electrostrictive film type devices were produced.
【００３７】なお、実施例４のペーストは、平均粒子径
が約０．６μｍのＰｔ粉末と約３μｍのＰｔ粉末とを
３：２の割合で混合した混合粉末を使用して、これに有
機バインダと有機溶剤とを加え、１時間混合したもので
ある。また、実施例５のペーストは、平均粒子径が約１
μｍのＰｔ粉末に有機バインダと有機溶剤とを加え、混
合時間を１時間としたペーストと混合時間を１０分間と
したペーストをそれぞれ調合し、それら粉末分散性が異
なるペーストを３：１の割合で混合したものである。更
に、比較例３では、従来と同様の導電体ペーストとし
て、０．６μｍのＰｔ粉末に有機バインダと有機溶剤を
加えて調合したペーストを用い、比較例４では、７μｍ
のＰｔ粉末に有機バインダと有機溶剤を加えて調合した
ペーストを用いた。The paste of Example 4 uses a mixed powder obtained by mixing a Pt powder having an average particle diameter of about 0.6 μm and a Pt powder having an average particle diameter of about 3 μm in a ratio of 3: 2. And an organic solvent were added and mixed for 1 hour. The paste of Example 5 had an average particle size of about 1
An organic binder and an organic solvent are added to Pm powder of μm, and a paste having a mixing time of 1 hour and a paste having a mixing time of 10 minutes are prepared respectively. The pastes having different powder dispersibility are mixed at a ratio of 3: 1. It is a mixture. Further, in Comparative Example 3, a paste prepared by adding an organic binder and an organic solvent to 0.6 μm Pt powder was used as a conductive paste similar to the conventional one, and in Comparative Example 4, 7 μm
A paste prepared by adding an organic binder and an organic solvent to the above Pt powder was used.
【００３８】また、各圧電／電歪膜型素子は、何れも、
上記と同様な条件及び手順にて作製されたが、そのよう
な素子における圧電／電歪作動部１８の大きさのみ、
０．８ｍｍ×３ｍｍとした。Each piezoelectric / electrostrictive film type element
It was manufactured under the same conditions and procedure as above, but only the size of the piezoelectric / electrostrictive operating portion 18 in such an element was
0.8 mm × 3 mm.
【００３９】かくして得られた各素子について、上記と
同様にして、下部電極膜１２の表面粗さ（Ｒmax 、Ｒ
ａ）や各素子における圧電／電歪膜１４のクラック発生
率について求めると共に、各素子に３０Ｖの電圧を印加
した時の変位量を測定し、それらの結果を、下記表２に
示した。With respect to each element thus obtained, the surface roughness (Rmax, Rmax,
a) and the rate of occurrence of cracks in the piezoelectric / electrostrictive film 14 in each element, and the amount of displacement when a voltage of 30 V was applied to each element was measured. The results are shown in Table 2 below.
【００４０】[0040]
【表２】 ＊粉末粒子径はペースト調合時に使用した電極材料（Ｐ
ｔ粉末）の平均粒子径を表わす。 ＊圧電／電歪膜のクラック発生率は、１０００個の素子
におけるクラック発生素子の割合で示されている。[Table 2] * Powder particle size depends on the electrode material (P
t powder). * The crack generation rate of the piezoelectric / electrostrictive film is indicated by the ratio of crack generation elements in 1000 elements.
【００４１】かかる表１及び表２の結果より明らかなよ
うに、下部電極膜１２の表面粗さが本発明で規定するＲ
max 、Ｒａの範囲内にある素子は、圧電／電歪膜焼成後
に発生するクラックの発生率が低く押さえられているこ
と、加えて変位特性においても効果的に向上しているこ
とが判る。また、表中には明記されていないが、本発明
で規定される表面粗さの範囲外で、平坦性の良いもので
は圧電／電歪膜に一部剥がれが生じるもの、また平坦性
が悪いものでは、素子特性評価時の電圧印加によって、
圧電／電歪膜が絶縁破壊するものがあった。As is evident from the results of Tables 1 and 2, the surface roughness of the lower electrode film 12 is defined by R
It can be seen that the elements in the ranges of max and Ra have a low crack generation rate after firing the piezoelectric / electrostrictive film, and also have effectively improved displacement characteristics. Further, although not specified in the table, the piezoelectric / electrostrictive film is partially peeled if the flatness is good, and the flatness is poor if the flatness is out of the range of the surface roughness specified in the present invention. In the device, by applying a voltage at the time of evaluating the device characteristics,
Some piezoelectric / electrostrictive films caused dielectric breakdown.
【図１】圧電／電歪膜型素子の一例について、その構造
を示す斜視説明図である。FIG. 1 is an explanatory perspective view showing the structure of an example of a piezoelectric / electrostrictive film element.
１０ セラミック基板 １０ａ 薄肉部 １２
下部電極膜 １４ 圧電／電歪膜 １６ 上部電極膜 １８
圧電／電歪作動部 ２０ リード部Reference Signs List 10 ceramic substrate 10a thin part 12
Lower electrode film 14 Piezoelectric / electrostrictive film 16 Upper electrode film 18
Piezoelectric / electrostrictive actuator 20 Lead
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 41/08 H04R 17/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 41/08 H04R 17/00
Claims (3)
基板上に膜形成手法により順次積層されて設けられた下
部電極膜、圧電／電歪膜および上部電極膜からなる圧電
／電歪作動部とを備え、少なくともそれら下部電極膜、
圧電／電歪膜が熱処理されて一体的に形成されてなる圧
電／電歪膜型素子にして、 前記電極膜のうちの少なくとも前記下部電極膜の表面
が、Ｒmax で表わされる表面粗さで３μｍ〜１４μｍの
範囲となり且つＲａで表わされる表面粗さにおいて２μ
ｍ以下となるように、形成されていることを特徴とする
圧電／電歪膜型素子。1. A thin ceramic substrate, and a piezoelectric / electrostrictive operating portion composed of a lower electrode film, a piezoelectric / electrostrictive film, and an upper electrode film which are sequentially laminated on the ceramic substrate by a film forming technique. Comprising at least those lower electrode films,
A piezoelectric / electrostrictive film element in which a piezoelectric / electrostrictive film is heat-treated to be integrally formed, wherein at least a surface of the lower electrode film among the electrode films has a surface roughness represented by Rmax of 3 μm. １４14 μm and a surface roughness represented by Ra of 2 μm.
m. The piezoelectric / electrostrictive film element is formed so as to be not more than m.
有する２種以上の固体粒子を混合した混合粉末を電極材
料とした導電体ペーストを用いて形成されていることを
特徴とする請求項１記載の圧電／電歪膜型素子。2. The method according to claim 1, wherein the lower electrode film is formed by using a conductive paste using, as an electrode material, a mixed powder obtained by mixing two or more types of solid particles having different average particle diameters. 2. The piezoelectric / electrostrictive film element according to 1.
孔を有するポーラスな電極膜である請求項１または２に
記載の圧電／電歪膜型素子。3. The piezoelectric / electrostrictive film element according to claim 1, wherein the lower electrode film is a porous electrode film having open pores opened on the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03716094A JP3207315B2 (en) | 1993-03-12 | 1994-03-08 | Piezoelectric / electrostrictive film type element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-78804 | 1993-03-12 | ||
| JP7880493 | 1993-03-12 | ||
| JP03716094A JP3207315B2 (en) | 1993-03-12 | 1994-03-08 | Piezoelectric / electrostrictive film type element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06318745A JPH06318745A (en) | 1994-11-15 |
| JP3207315B2 true JP3207315B2 (en) | 2001-09-10 |
Family
ID=26376247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03716094A Expired - Lifetime JP3207315B2 (en) | 1993-03-12 | 1994-03-08 | Piezoelectric / electrostrictive film type element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3207315B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5370332B2 (en) * | 1995-09-19 | 2013-12-18 | セイコーエプソン株式会社 | Piezoelectric element and ink jet recording head |
| JP3890634B2 (en) * | 1995-09-19 | 2007-03-07 | セイコーエプソン株式会社 | Piezoelectric thin film element and ink jet recording head |
| JP4746732B2 (en) * | 2000-05-31 | 2011-08-10 | キヤノン株式会社 | Manufacturing method of image display device |
| JP5827866B2 (en) * | 2011-10-20 | 2015-12-02 | 日本碍子株式会社 | Film-type piezoelectric / electrostrictive element and manufacturing method thereof |
| JP2013254966A (en) * | 2013-07-17 | 2013-12-19 | Seiko Epson Corp | Liquid ejection head, liquid ejection device and piezoelectric element |
-
1994
- 1994-03-08 JP JP03716094A patent/JP3207315B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06318745A (en) | 1994-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5504388A (en) | Piezoelectric/electrostrictive element having electrode film(s) with specified surface roughness | |
| JP3151644B2 (en) | Piezoelectric / electrostrictive film type element | |
| JP3120260B2 (en) | Piezoelectric / electrostrictive film type element | |
| JP3344888B2 (en) | Piezoelectric / electrostrictive film element and method of manufacturing the same | |
| JP3320596B2 (en) | Piezoelectric / electrostrictive film element and method of manufacturing the same | |
| US7348711B2 (en) | Piezoelectric/electrostrictive element, method of manufacturing piezoelectric/electrostrictive element, piezoelectric/electrostrictive device, and method of manufacturing piezoelectric/electrostrictive device | |
| JPH0412678A (en) | Piezoelectric/electrostriction actuator | |
| US6246156B1 (en) | Piezoelectric/electrostrictive element | |
| US20030067250A1 (en) | Ceramic stack, method of manufacturing ceramic stack, piezoelectric/electrostrictive device, method of manufacturing piezoelectric/electrostrictive device, and ceramic sintered body | |
| JPH0549270A (en) | Piezoelectric/electrostrictive actuator | |
| JP3397753B2 (en) | Multilayer piezoelectric element and manufacturing method thereof | |
| US20060113876A1 (en) | Piezoelectric/electrostrictive device | |
| EP2677558A1 (en) | Piezoelectric element | |
| JP4015820B2 (en) | Wiring board and manufacturing method thereof | |
| JP2002217465A (en) | Piezoelectric element and method of manufacturing the same | |
| JP3207315B2 (en) | Piezoelectric / electrostrictive film type element | |
| JP3999473B2 (en) | Integral piezoelectric / electrostrictive membrane element having excellent durability and method for manufacturing the same | |
| JP3894112B2 (en) | Piezoelectric / electrostrictive membrane element | |
| JP2007273799A (en) | Lamination structure and method of manufacturing same | |
| JPH05270912A (en) | Piezoelectric/electrostrictive film type element | |
| JP3283386B2 (en) | Piezoelectric film type element, its processing method and its driving method | |
| JP4485140B2 (en) | Piezoelectric actuator and manufacturing method thereof | |
| JP2001250994A (en) | Laminated piezoelectric element | |
| JP4067491B2 (en) | Method for manufacturing piezoelectric / electrostrictive device | |
| JPH11191645A (en) | Piezoelectric-electrostrictive film actuator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080706 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090706 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100706 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100706 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110706 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120706 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120706 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130706 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |