JP3204035B2 - Electroless palladium plating solution and plating method - Google Patents
Electroless palladium plating solution and plating methodInfo
- Publication number
- JP3204035B2 JP3204035B2 JP09777995A JP9777995A JP3204035B2 JP 3204035 B2 JP3204035 B2 JP 3204035B2 JP 09777995 A JP09777995 A JP 09777995A JP 9777995 A JP9777995 A JP 9777995A JP 3204035 B2 JP3204035 B2 JP 3204035B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating solution
- electroless palladium
- electroless
- palladium
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品等へのボンデ
ィング用めっきなどとして好適に用いられる無電解パラ
ジウムめっき液及びめっき方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless palladium plating solution and a plating method which are suitably used as plating for bonding electronic parts and the like.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来、
電子機器の接合技術としては、無電解ニッケルめっき／
無電解金めっきプロセスが主流であるが、最近において
は電子部品等をコストダウンさせることが要望され、こ
のためコストの高い無電解金めっきに代えて無電解パラ
ジウムめっきが注目されるようになってきた。2. Description of the Related Art
The joining technology for electronic devices is electroless nickel plating /
Although the electroless gold plating process is the mainstream, it has recently been demanded to reduce the cost of electronic components and the like, and, for this reason, electroless palladium plating has attracted attention in place of expensive electroless gold plating. Was.
【０００３】このため、種々の無電解パラジウムめっき
液が提案されている（特開昭６２−１２４２８０号、特
開平１−２６８８７７号、特開平５−２１４５５１号公
報）。For this reason, various electroless palladium plating solutions have been proposed (JP-A-62-124280, JP-A-1-268877, JP-A-5-214551).
【０００４】しかし、従来の無電解パラジウムめっき皮
膜はクラックが発生し易く、このため半田濡れ性及びボ
ンディング性が金めっき皮膜に比べて劣るという問題が
あった。また、従来の無電解パラジウムめっき液は浴の
安定性に劣り、更に析出速度も遅いという問題もあっ
た。[0004] However, the conventional electroless palladium plating film has a problem that cracks are liable to occur, and therefore the solder wettability and the bonding property are inferior to those of the gold plating film. Further, the conventional electroless palladium plating solution has a problem that the stability of the bath is inferior and the deposition rate is slow.
【０００５】本発明は上記事情に鑑みなされたもので、
浴安定性に優れ、析出速度も大きい上、クラックの発生
し難いめっき皮膜を与える無電解パラジウムめっき液及
びめっき方法を提供することを目的とする。[0005] The present invention has been made in view of the above circumstances,
An object of the present invention is to provide an electroless palladium plating solution and a plating method which provide a plating film which is excellent in bath stability, has a high deposition rate, and hardly causes cracks.
【０００６】[0006]
【課題を解決するための手段及び作用】本発明者は、上
記目的を達成するため鋭意検討を行った結果、パラジウ
ム化合物と、次亜リン酸及びその塩、亜リン酸及びその
塩並びに水素化ホウ素化物及びアミンボラン類から選ば
れる還元剤と、アンモニア及びアミン類から選ばれる錯
化剤とを含有する無電解パラジウムめっき液に、チオ硫
酸塩、ポリチオン酸塩、亜二チオン酸塩、亜硫酸塩及び
二チオン酸塩から選ばれる無機硫黄化合物を添加するこ
とにより、無電解パラジウムめっき液の安定性が顕著に
向上する上、析出速度も向上し、また得られた無電解パ
ラジウムめっき皮膜にクラックが生じ難く、このため半
田濡れ性、ボンディング性に優れためっき皮膜を形成し
得ることを見い出し、本発明をなすに至ったものであ
る。The present inventors have conducted intensive studies to achieve the above object, and as a result, have found that palladium compounds, hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, and hydrogenation In an electroless palladium plating solution containing a reducing agent selected from borides and amine borane and a complexing agent selected from ammonia and amines, thiosulfate, polythionate, dithionite, sulfite and By adding an inorganic sulfur compound selected from dithionates, the stability of the electroless palladium plating solution is remarkably improved, the deposition rate is also improved, and cracks occur in the obtained electroless palladium plating film. It has been found that it is difficult to form a plating film having excellent solder wettability and bonding property, and the present invention has been accomplished.
【０００７】以下、本発明につき更に詳しく説明する
と、本発明の無電解パラジウムめっき液は、パラジウム
化合物と、次亜リン酸及びその塩、亜リン酸及びその塩
並びに水素化ホウ素化物及びアミンボラン類から選ばれ
る還元剤と、アンモニア及びアミン類から選ばれる錯化
剤とを含有する無電解パラジウムめっき液に対し、無機
硫黄化合物を添加してなるものである。Hereinafter, the present invention will be described in more detail. The electroless palladium plating solution of the present invention comprises a palladium compound, hypophosphorous acid and a salt thereof, phosphorous acid and a salt thereof, and a borohydride and an amine borane. An inorganic sulfur compound is added to an electroless palladium plating solution containing a selected reducing agent and a complexing agent selected from ammonia and amines.
【０００８】ここで、パラジウム化合物としては、水溶
性のものであればいずれのものでもよく、例えば塩化パ
ラジウム、硫酸パラジウム、酢酸パラジウムなどを用い
ることができる。その使用量は、０．００１〜０．５ｍ
ｏｌ／ｌ、特に０．０１〜０．１ｍｏｌ／ｌとすること
が好ましい。少なすぎるとめっき速度が低下し、多すぎ
ると皮膜物性が低下するおそれがある。Here, any palladium compound may be used as long as it is water-soluble, and for example, palladium chloride, palladium sulfate, palladium acetate and the like can be used. The usage amount is 0.001-0.5m
ol / l, particularly preferably 0.01 to 0.1 mol / l. If the amount is too small, the plating rate will decrease, and if it is too large, the film properties may decrease.
【０００９】また、還元剤としては、上述したように、
次亜リン酸、次亜リン酸ナトリウム等の次亜リン酸塩、
亜リン酸、亜リン酸ナトリウム等の亜リン酸塩、水素化
ホウ素ナトリウム等の水素化ホウ素化物、ジメチルアミ
ンボラン、ジエチルアミンボラン等のアミンボラン類の
いずれかを使用する。その使用量は０．００１〜５ｍｏ
ｌ／ｌ、特に０．２〜２ｍｏｌ／ｌとすることが好まし
い。少なすぎると析出速度が低下し、多すぎると浴が不
安定化するおそれがある。Further, as described above, the reducing agent
Hypophosphorous acid, hypophosphites such as sodium hypophosphite,
Any of phosphites such as phosphorous acid and sodium phosphite, borohydrides such as sodium borohydride, and amine boranes such as dimethylamine borane and diethylamine borane are used. The usage amount is 0.001-5mo
1 / l, particularly preferably 0.2 to 2 mol / l. If the amount is too small, the deposition rate decreases, and if it is too large, the bath may be unstable.
【００１０】更に、錯化剤としてアンモニアやアミン類
を使用する。アミン類としては、メチルアミン、ジメチ
ルアミン、トリメチルアミン、ベンジルアミン、メチレ
ンジアミン、エチレンジアミン、テトラメチレンジアミ
ン、ジエチレントリアミン、ＥＤＴＡ、ＥＤＴＡナトリ
ウム、Ｎ−ヒドロキシエチレンジアミン三酢酸及びその
塩、グリシン、Ｎ−メチルグリシン、ビタントイン酸、
イミダゾリン、２−メチル−２−イミダゾリンなどが挙
げられ、これらの１種を単独で又は２種以上を併用して
使用することができる。これらの中では、特にジメチル
アミン、エチレンジアミン、Ｎ−ヒドロキシエチレンジ
アミン三酢酸が好ましい。その使用量は０．００１〜１
０ｍｏｌ／ｌ、特に０．１〜２ｍｏｌ／ｌとすることが
好ましい。少なすぎると浴の安定性が低下し、多すぎる
とめっき速度が低下する。Further, ammonia and amines are used as complexing agents. Examples of amines include methylamine, dimethylamine, trimethylamine, benzylamine, methylenediamine, ethylenediamine, tetramethylenediamine, diethylenetriamine, EDTA, sodium EDTA, N-hydroxyethylenediaminetriacetic acid and salts thereof, glycine, N-methylglycine, and bitantoin. acid,
Examples thereof include imidazoline and 2-methyl-2-imidazoline, and one of these can be used alone or two or more can be used in combination. Of these, dimethylamine, ethylenediamine, and N-hydroxyethylenediaminetriacetic acid are particularly preferred. The usage amount is 0.001-1
It is preferably 0 mol / l, particularly preferably 0.1 to 2 mol / l. If the amount is too small, the stability of the bath decreases, and if the amount is too large, the plating rate decreases.
【００１１】本発明の無電解パラジウムめっき液には、
上記成分に加えてチオ硫酸塩（２価の無機硫黄化合
物）、ポリチオン酸塩（例えばＯ3Ｓ−Ｓｎ−ＳＯ3にお
いて、ｎ＝１〜４の無機硫黄化合物）、亜二チオン酸塩
（３価の無機硫黄化合物）、亜硫酸塩（４価の無機硫黄
化合物）、二チオン酸塩（５価の無機硫黄化合物）から
選ばれる無機硫黄化合物の１種又は２種以上を添加する
もので、これによりめっき液の安定性、析出速度、めっ
き皮膜特性が顕著に向上するものである。なお、上記塩
としてはナトリウム塩等の水溶性塩が使用される。[0011] The electroless palladium plating solution of the present invention includes:
In addition to the above components, a thiosulfate (a divalent inorganic sulfur compound), a polythionate (for example, an inorganic sulfur compound of n = 1 to 4 in O 3 S—Sn—SO 3 ), and a dithionate (3 One or two or more inorganic sulfur compounds selected from divalent inorganic sulfur compounds), sulfites (tetravalent inorganic sulfur compounds), and dithionates (pentavalent inorganic sulfur compounds). Thereby, the stability, deposition rate and plating film characteristics of the plating solution are remarkably improved. As the salt, a water-soluble salt such as a sodium salt is used.
【００１２】上記無機硫黄化合物の添加量は０．０１〜
１０ｍｍｏｌ（ミリモル）／ｌ、特に０．１〜５ｍｍｏ
ｌ／ｌであり、この量が少なすぎると、上述した効果が
十分に達成されず、また多すぎるとめっき速度が低下す
る傾向にある。The amount of the inorganic sulfur compound to be added is 0.01 to
10 mmol (mmol) / l, especially 0.1 to 5 mmol
l / l, and if the amount is too small, the above-mentioned effects are not sufficiently achieved, and if it is too large, the plating rate tends to decrease.
【００１３】本発明のめっき液には、更にめっき皮膜の
均一性向上を目的として非イオン性、カチオン性、アニ
オン性、両性の各種界面活性剤を添加することができ
る。この場合、その添加量は０．０１〜１０ｇ／ｌとす
ることができる。To the plating solution of the present invention, various surfactants such as nonionic, cationic, anionic and amphoteric can be added for the purpose of improving the uniformity of the plating film. In this case, the addition amount can be 0.01 to 10 g / l.
【００１４】本発明のめっき液はｐＨ４〜１０、特に６
〜８であることが好ましく、ｐＨが低すぎると浴の安定
性が低下し、ｐＨが高すぎるとめっき皮膜にクラックが
生じやすくなる。The plating solution of the present invention has a pH of 4 to 10, especially 6
When the pH is too low, the stability of the bath is lowered, and when the pH is too high, cracks are easily generated in the plating film.
【００１５】上述した無電解パラジウムめっき液は電子
部品のボンディング用めっきなどとして好適に使用され
るが、これを用いてめっきを行う場合は、このめっき液
中に被めっき物を浸漬すればよい。被めっき液の材質と
しては、鉄、コバルト、ニッケル、銅、錫、銀、金、白
金、パラジウムなどやこれらの合金といった無電解パラ
ジウムめっき皮膜の還元析出に触媒性のある金属を挙げ
ることができる。また、触媒性のない金属であれば、い
わゆるガルバニックイニシエーションを行う（被めっき
物に対し還元析出が生じるまで電気を与える）か、又は
上記触媒活性のある金属のめっき皮膜を形成してからめ
っきを行えばよく、またガラス、セラミックス、プラス
チック等、或いは上記触媒活性のない金属などに対して
は常法に従ってパラジウム核などの金属触媒核を付着さ
せた後にめっきを行うことができる。The above-mentioned electroless palladium plating solution is suitably used as a plating for bonding electronic parts. When plating is performed using the electroless palladium plating solution, an object to be plated may be immersed in the plating solution. Examples of the material of the plating solution include metals having a catalytic property for reductive deposition of an electroless palladium plating film such as iron, cobalt, nickel, copper, tin, silver, gold, platinum, palladium and alloys thereof. . In the case of a metal having no catalytic property, a so-called galvanic initiation is performed (electricity is applied to the object to be plated until reductive precipitation occurs), or plating is performed after forming a plating film of the metal having catalytic activity. The plating can be performed after attaching a metal catalyst nucleus such as a palladium nucleus to a glass, ceramics, plastic, or the like or a metal having no catalytic activity according to a conventional method.
【００１６】なお、めっき温度は３０〜８０℃、特に５
０〜７０℃とすることが好ましい。また、必要によりめ
っき液を撹拌することができる。The plating temperature is 30 to 80 ° C., particularly 5
The temperature is preferably set to 0 to 70 ° C. Further, the plating solution can be agitated if necessary.
【００１７】[0017]
【発明の効果】本発明の無電解パラジウムめっき液は、
浴の安定性が高く、このため高温でめっき作業を支障な
く行うことができ、また析出速度が大きいと共に、皮膜
物性に優れ、クラック発生がなく、半田濡れ性、ボンデ
ィング性に優れためっき皮膜を与えるものである。The electroless palladium plating solution of the present invention comprises:
The stability of the bath is high, so plating work can be carried out at high temperature without any trouble.In addition, the deposition rate is high, the coating properties are excellent, there is no crack, and the plating film has excellent solder wettability and bonding property. Is to give.
【００１８】[0018]
【実施例】以下、実施例と比較例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。EXAMPLES The present invention will be described below in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples.
【００１９】〔比較例１〕 ＰｄＣｌ2 ５ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 1 PdCl 2 5 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L pH 8 Bath temperature 50 ° C.
【００２０】〔比較例２〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ チオジグリコール酸 ２０ｍｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Thiodiglycolic acid 20 mg / L pH 8 Bath temperature 50 ° C.
【００２１】〔比較例３〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ チオジグリコール酸 ２０ｍｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 3 PdCl 2 3 g / L Ethylenediamine 25 g / L Thiodiglycolic acid 20 mg / L Dimethylamine borane 10 g / L pH 8 Bath temperature 50 ° C.
【００２２】〔実施例１〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ チオ硫酸ソーダ ５０ｍｇ／Ｌ ｐＨ ８ 浴温 ５０℃Example 1 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Sodium thiosulfate 50 mg / L pH 8 Bath temperature 50 ° C.
【００２３】〔実施例２〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ 二チオン酸ソーダ ４０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Sodium dithionate 40 mg / L pH 8 Bath temperature 70 ° C.
【００２４】〔実施例３〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ 亜硫酸ソーダ ４０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 3 PdCl 2 3 g / L Ethylenediamine 25 g / L Dimethylamine borane 10 g / L Sodium sulfite 40 mg / L pH 8 Bath temperature 70 ° C.
【００２５】〔実施例４〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ 亜二チオン酸ソーダ ５０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 4 PdCl 2 3 g / L Ethylenediamine 25 g / L Dimethylamine borane 10 g / L Sodium dithionite 50 mg / L pH 8 Bath temperature 70 ° C.
【００２６】上記成分を水に溶解し、各例のめっき液を
調製した後、その安定性を下記方法で調べた。９０℃加熱試験 ：９０℃高温槽でめっき液１００ｍｌを
ビーカー中に密閉保存。室温放置試験 ：室温状態でめっき液１リットルをポリエ
チレン容器中に密閉保存。次に、表面にニッケル−ホウ
素系無電解ニッケルめっきを施した（Ｎｉ４μｍ）鉄板
を上記各めっき液中に浸漬し、各例中に記載した浴温で
１時間めっきを行い、その析出速度を評価した。また、
同様の条件で無電解パラジウムめっき皮膜を０．５μｍ
施し、ＳＥＭ観察でクラックの有無を調べた。After the above components were dissolved in water to prepare plating solutions of the respective examples, the stability was examined by the following method. 90 ° C heating test : 100 ml of plating solution is sealed and stored in a beaker in a 90 ° C high-temperature bath. Room temperature storage test : One liter of plating solution was sealed and stored in a polyethylene container at room temperature. Next, an iron plate having a nickel-boron electroless nickel plated surface (Ni 4 μm) was immersed in each of the above plating solutions, plated for 1 hour at the bath temperature described in each example, and evaluated for the deposition rate. did. Also,
Under the same conditions, electroless palladium plating film
Then, the presence or absence of cracks was examined by SEM observation.
【００２７】更に、下記方法により、半田濡れ性、ボン
ディング性を評価した。 半田濡れ性 ：１０×５０ｍｍの４２アロイメニスコグラ
フ用試片に同上下地ニッケルめっきを施し、次いで無電
解パラジウムめっき皮膜を０．５μｍ施した後、メニス
コグラフで評価した。この場合、ニッケル／金プロセス
の半田濡れを基準に評価した。ボンディング性 ：評価用ピースにめっきし（めっき条件
は同上）、金線によるボンディングを行って強度を評価
した。この場合、ニッケル／金プロセスを基準に評価し
た。以上の結果を表１に示す。Furthermore, the solder wettability and the bond
Was evaluated. Solder wettability : 10 × 50 mm 42 alloy menis kogura
Apply nickel plating to the base
After applying 0.5 μm of palladium decomposed plating film,
Evaluated by cograph. In this case, nickel / gold process
Was evaluated on the basis of solder wetting.Bonding properties ： Plating the evaluation piece (plating conditions
Is the same as above), strength is evaluated by bonding with gold wire
did. In this case, the evaluation is based on the nickel / gold process.
Was. Table 1 shows the above results.
【００２８】[0028]
【表１】 [Table 1]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 正本 宏和 大阪府枚方市出口１丁目５番１号 上村 工業株式会社 中央研究所内 (56)参考文献 特開 平５−214551（ＪＰ，Ａ) 特開 平１−268877（ＪＰ，Ａ) 特開 昭62−124280（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 18/00 - 18/54 H01L 21/321 H05K 3/24 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Hirokazu Masamoto 1-5-1, Hirakata-shi, Osaka Uemura Industry Co., Ltd. Central Research Laboratory (56) References JP-A-5-214551 (JP, A) JP Hei 1-268877 (JP, A) JP-A-62-124280 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 18/00-18/54 H01L 21/321 H05K 3 /twenty four
Claims (4)
の塩、亜リン酸及びその塩並びに水素化ホウ素化物及び
アミンボラン類から選ばれる還元剤と、アンモニア及び
アミン類から選ばれる錯化剤とを含有する無電解パラジ
ウムめっき液に、チオ硫酸塩、ポリチオン酸塩、亜二チ
オン酸塩、亜硫酸塩及び二チオン酸塩から選ばれる無機
硫黄化合物を添加してなることを特徴とする無電解パラ
ジウムめっき液。1. A palladium compound, a reducing agent selected from hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, borohydrides and amine borane, and a complexing agent selected from ammonia and amines Electroless palladium plating characterized by adding an inorganic sulfur compound selected from thiosulfate, polythionate, dithionite, sulfite and dithionate to a contained electroless palladium plating solution liquid.
０ｍｍｏｌ／ｌである請求項１記載のめっき液。2. The amount of the inorganic sulfur compound added is 0.01 to 1
The plating solution according to claim 1, wherein the amount is 0 mmol / l.
載のめっき液。3. The plating solution according to claim 1, wherein the plating solution has a pH of 4 to 10.
めっき液中に被めっき物を浸漬して該被めっき物上に無
電解パラジウムめっき皮膜を形成することを特徴とする
無電解パラジウムめっき方法。4. An electroless palladium plating film formed by dipping an object to be plated in the plating solution according to claim 1 to form an electroless palladium plating film on the object to be plated. Palladium plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09777995A JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09777995A JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08269727A JPH08269727A (en) | 1996-10-15 |
| JP3204035B2 true JP3204035B2 (en) | 2001-09-04 |
Family
ID=14201325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09777995A Expired - Lifetime JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3204035B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7704307B2 (en) | 2005-07-20 | 2010-04-27 | Nippon Mining & Metals Co., Ltd. | Electroless palladium plating liquid |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020002128A1 (en) | 2000-03-01 | 2002-01-03 | Gernon Michael D. | Aqueous solutions containing dithionic acid and/or metal dithionate |
| DE10016132A1 (en) | 2000-03-31 | 2001-10-18 | Infineon Technologies Ag | Electronic component for electronic devices comprises electronic switch and conducting paths on surface of the component to electrically connect the switch with metal-coated protrusions made from rubber-elastic insulating material |
| CN1679154A (en) * | 2002-05-16 | 2005-10-05 | 新加坡国立大学 | Wafer level electroless copper metallization and bumping process, and plating solutions for semiconductor wafer and microchip |
| JP4674120B2 (en) * | 2005-06-06 | 2011-04-20 | 京セラＳｌｃテクノロジー株式会社 | Wiring board and manufacturing method thereof |
| JP4844716B2 (en) | 2005-09-27 | 2011-12-28 | 上村工業株式会社 | Electroless palladium plating bath |
| CN101448973B (en) | 2007-02-28 | 2014-06-25 | 小岛化学药品株式会社 | Electroless pure-palladium plating solution |
| US9603258B2 (en) * | 2015-08-05 | 2017-03-21 | Uyemura International Corporation | Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom |
| JP7149061B2 (en) * | 2017-10-06 | 2022-10-06 | 上村工業株式会社 | Electroless palladium plating solution |
| JP7407644B2 (en) * | 2020-04-03 | 2024-01-04 | 上村工業株式会社 | Palladium plating solution and plating method |
-
1995
- 1995-03-30 JP JP09777995A patent/JP3204035B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7704307B2 (en) | 2005-07-20 | 2010-04-27 | Nippon Mining & Metals Co., Ltd. | Electroless palladium plating liquid |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08269727A (en) | 1996-10-15 |
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