JP3200996B2 - Optical waveguide device - Google Patents
Optical waveguide deviceInfo
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- JP3200996B2 JP3200996B2 JP22754092A JP22754092A JP3200996B2 JP 3200996 B2 JP3200996 B2 JP 3200996B2 JP 22754092 A JP22754092 A JP 22754092A JP 22754092 A JP22754092 A JP 22754092A JP 3200996 B2 JP3200996 B2 JP 3200996B2
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- optical waveguide
- face
- light
- substrate
- waveguide device
- Prior art date
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- Optical Integrated Circuits (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は光導波路装置に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical waveguide device.
【０００２】[0002]
【従来の技術】半導体レーザから射出されたレーザ光を
基板上に形成された光導波路を介して伝搬し、移動体や
振動体等の被測定対象にレーザ光を導く光導波路装置と
して、例えば図５に示すように、ニオブ酸リチウム（Ｌ
ｉＮｂＯ3 、ＬＮ）等より成る基板１の上にＴｉ拡散等
によって高屈折率の光導波路２が基板１の一方の端面１
Ａから、他方の端面１Ｂに向かって帯状に形成された光
導波路装置１０が用いられている。2. Description of the Related Art As an optical waveguide device which propagates a laser beam emitted from a semiconductor laser through an optical waveguide formed on a substrate and guides the laser beam to an object to be measured such as a moving body or a vibrating body, for example, FIG. As shown in FIG. 5, lithium niobate (L
An optical waveguide 2 having a high refractive index is formed on one end face 1 of the substrate 1 by Ti diffusion or the like on a substrate 1 made of iNbO 3 , LN) or the like.
An optical waveguide device 10 formed in a band shape from A to the other end surface 1B is used.
【０００３】このような構成において、Ｈｅ−Ｎｅ等の
レーザ４からのレーザ光Ｌi0をレンズ等より成る集光系
５を介して光導波路２の入射側の端面２Ａに矢印Ｌi1で
示すように入射すると、光は光導波路２を介して射出側
の端面２Ｂに伝搬される。射出側の端面２Ｂから射出さ
れたレーザ光はレンズ等の集光系６を介して矢印ＬOで
示すように射出され、図示しないが例えば移動体や振動
体等の被測定対象に照射される。In such a configuration, a laser beam Li 0 from a laser 4 such as He—Ne is passed through a condensing system 5 composed of a lens or the like to an end face 2 A on the incident side of the optical waveguide 2 as shown by an arrow Li 1. , Light is propagated through the optical waveguide 2 to the end face 2B on the emission side. The laser light emitted from the end face 2B on the emission side is emitted through a light condensing system 6 such as a lens as shown by an arrow L O , and irradiates an object to be measured such as a moving body or a vibrating body (not shown). .
【０００４】この場合、光導波路２は空気と比較して屈
折率が非常に高く、光源からの光はこの屈折率の違いに
よって基板端面１Ａ即ち光導波路２の端面２Ａにおいて
一部が反射される。この反射光はレンズ等の集光系５を
介して光源即ちレーザ４に戻ることになる。この戻り光
は、例えば光源が半導体レーザの場合には発振の安定性
を損ねてモードホップ等引き起こし、ノイズの増大化を
招来するため取り除く必要がある。In this case, the refractive index of the optical waveguide 2 is much higher than that of air, and the light from the light source is partially reflected at the substrate end face 1A, that is, the end face 2A of the optical waveguide 2 due to the difference in the refractive index. . This reflected light returns to the light source, that is, the laser 4 via the light condensing system 5 such as a lens. When the light source is a semiconductor laser, for example, the return light impairs the stability of oscillation and causes a mode hop or the like, which leads to an increase in noise.
【０００５】このため光源と光導波路２との光学的結合
部即ち集光系５においては、このような不要な戻り光を
防ぐため、光アイソレータが用いられている。この光ア
イソレータを用いずに不要反射光の光源への戻りを低減
化する方法としては、例えば図６に示すように基板１の
光入射側端面１Ａに全面的に無反射コート層３を被着す
るとか、又は図７に示すように、端面１Ａを斜め研磨等
により傾斜させて且つ無反射コート層３を被着する等の
方法が採られており、特に光ファイバーと光源とのレン
ズ結合に広く用いられている。For this reason, an optical isolator is used in the optical coupling portion between the light source and the optical waveguide 2, that is, in the light condensing system 5, in order to prevent such unnecessary return light. As a method for reducing the return of the unnecessary reflected light to the light source without using the optical isolator, for example, as shown in FIG. 6, a non-reflective coating layer 3 is entirely coated on the light incident side end face 1A of the substrate 1. Alternatively, as shown in FIG. 7, a method is employed in which the end face 1A is inclined by oblique polishing or the like and the anti-reflection coating layer 3 is applied. Used.
【０００６】しかしながら上述の図６に示す無反射コー
ト層３を設けるのみでは不要反射光の低減化が十分でな
く、図７に示す斜め研磨と無反射コート層３の被着とを
併用する場合は、研磨角度の適値の選定やその制御、ま
た光学的結合の際の光軸との位置合わせが難しく、また
この場合光源への不要反射光を大幅に低減することがで
きるが、更にこれを低減化して戻り光をより低減化する
ことが望まれている。However, merely providing the non-reflective coating layer 3 shown in FIG. 6 does not sufficiently reduce the unnecessary reflected light, and the diagonal polishing and the deposition of the non-reflective coating layer 3 shown in FIG. It is difficult to select and control the appropriate value of the polishing angle, and to align with the optical axis at the time of optical coupling.In this case, unnecessary reflected light to the light source can be greatly reduced. Therefore, it is desired to further reduce the return light.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、基板端面か
らの不要反射光の光源への戻り光量を確実に低減化する
ことができ、且つその製造が簡易な構成の光導波路装置
を提供する。SUMMARY OF THE INVENTION The present invention provides an optical waveguide device capable of reliably reducing the amount of unnecessary reflected light returning from an end face of a substrate to a light source and having a simple construction. .
【０００８】本発明光導波路装置は、基板の一主面上に
この基板に対して高屈折率の光導波路が形成されて成
り、基板の材料としてニオブ酸リチウム、タンタル酸リ
チウム、ガラス及びチタン酸リン酸カリウムのうち一種
が用いられて成り、光導波路の光入射側の端面を基板の
光入射側の端面に対して内側に設けるとともに、外部レ
ーザ光を集光素子により光導波路の光入射側の端面に集
光して構成する。[0008] The present invention optical waveguide device, for this board on one main surface of a substrate made are optical waveguides of high refractive index is formed, lithium niobate as a material of the substrate, a tantalum Sanli
One of the following: Titanium, glass and potassium phosphate titanate
It made by is used, against the end face of the light incident side of the optical waveguide path to the end face of the <br/> light incident side of the base plate provided inside Rutotomoni, external les
Laser light is collected on the light-incident side end face of the optical waveguide by a light-condensing element.
And light to configure.
【０００９】また本発明は、上述の光導波路装置におい
て、光導波路２の光入射側の端面２Ａと基板１の光入射
側の端面１Ａとの間隔を５０μｍ以上５００μｍ以下と
して構成する。Further, in the above-mentioned optical waveguide device, the distance between the light incident side end face 2A of the optical waveguide 2 and the light incident side end face 1A of the substrate 1 is set to be not less than 50 μm and not more than 500 μm.
【００１０】更にまた本発明は、上述の光導波路装置に
おいて、図２にその略線的斜視図を示すように、基板１
の光入射側の端面１Ａに無反射コート層３を被着して構
成する。Further, according to the present invention, in the above-mentioned optical waveguide device, as shown in a schematic perspective view of FIG.
And a non-reflective coating layer 3 is applied to the end face 1A on the light incident side of the light emitting element.
【００１１】また本発明は、上述の光導波路装置におい
て、基板１の光入射側の端面１Ａを斜め研磨して構成す
る。The present invention also provides the above-described optical waveguide device in which the end face 1A on the light incident side of the substrate 1 is obliquely polished.
【００１２】また更に本発明は、上述の光導波路装置に
おいて、光導波路２の光出射側の端面２Ｂをも基板１の
光出射側の端面１Ｂに対して内側に設けて構成する。Further, the present invention provides the above-described optical waveguide device, wherein the end surface 2B on the light emitting side of the optical waveguide 2 is also provided inside the end surface 1B on the light emitting side of the substrate 1.
【００１３】[0013]
【作用】上述したように本発明においては、光導波路２
の光入射側の端面２Ａを基板１の端面１Ａより内側に形
成することによって、戻り光を格段に低減化することが
できる。即ちこのような構成において、レーザ等の光源
からの光を光導波路に結合させる場合、図３に示すよう
に、レンズ１６の焦点Ｐを基板１の端面１Ａではなく光
導波路２の端面２Ａに位置させ、光源１７からの光Ｌi
を光導波路２の端面２Ａに集束させる。従って、基板端
面１Ａからの反射光Ｌo はこの端面１Ａに関して焦点Ｐ
と対称な位置Ｐ1 で集束した後レンズ１６により光源１
７へ戻されることがなく発散してしまい、光源１７への
戻り光量を格段に低減化することができることとなる。As described above, in the present invention, the optical waveguide 2
By forming the end face 2A on the light incidence side inside the end face 1A of the substrate 1, return light can be significantly reduced. That is, in such a configuration, when light from a light source such as a laser is coupled to the optical waveguide, the focal point P of the lens 16 is not located at the end face 1A of the substrate 1 but at the end face 2A of the optical waveguide 2 as shown in FIG. The light L i from the light source 17
Is focused on the end face 2A of the optical waveguide 2. Therefore, focal point P is reflected light L o from the substrate end face 1A on this end face 1A
After focusing at a position P 1 symmetrical to
The light is diverged without being returned to the light source 7, and the amount of light returning to the light source 17 can be significantly reduced.
【００１４】またこの場合、光導波路２と基板１との屈
折率の差は１０-2〜１０-3％程度と光導波路２と外部
（空気）の屈折率差に比し極めて小さいことから、この
導波路２と基板１との界面である端面２Ａにおける反射
光量は殆ど無視できる。またこのような構成は、光導波
路２を通常の形成方法、例えばＴｉ拡散法、プロトン交
換法、イオン交換法等により形成する際に、フォトリソ
グラフィ等の適用によって簡単に形成し得るものであ
り、工程数の増加を招くことなく、確実に戻り光の低減
化をはかることができる。In this case, the difference between the refractive indexes of the optical waveguide 2 and the substrate 1 is about 10 -2 to 10 -3 %, which is extremely small as compared with the refractive index difference between the optical waveguide 2 and the outside (air). The amount of reflected light at the end face 2A, which is the interface between the waveguide 2 and the substrate 1, can be almost ignored. Moreover, such a configuration can be easily formed by applying photolithography or the like when forming the optical waveguide 2 by a normal forming method, for example, a Ti diffusion method, a proton exchange method, an ion exchange method, or the like. Return light can be reliably reduced without increasing the number of steps.
【００１５】これに対し従来の光導波路装置において
は、図８に示すように光導波路２の端面２Ａにおける屈
折率差が比較的大きく、その反射光量は格段に高く、ま
たこの端面２Ａが焦点位置Ｐであるため、レンズ１６を
介して直接的に光源１７に戻されることとなり、その戻
り光量は極めて大となることがわかる。On the other hand, in the conventional optical waveguide device, as shown in FIG. 8, the refractive index difference at the end face 2A of the optical waveguide 2 is relatively large, the amount of reflected light is remarkably high, and the end face 2A is located at the focal position. Since it is P, the light is directly returned to the light source 17 via the lens 16, and it is understood that the amount of the returned light is extremely large.
【００１６】また本発明は、上述の構成において光導波
路２の端面２Ａと基板１の端面１Ａとの間隔を５０〜５
００μｍとすることによって、確実に戻り光の低減化を
はかると共に、入射光が光導波路２へ到達するまでの光
量の低下を抑制して十分な出射光量を保持することがで
きる。Further, according to the present invention, the distance between the end face 2A of the optical waveguide 2 and the end face 1A of the substrate 1 is set to 50 to 5 in the above configuration.
By setting the thickness to 00 μm, return light can be reliably reduced, and a decrease in the amount of incident light until it reaches the optical waveguide 2 can be suppressed to maintain a sufficient amount of emitted light.
【００１７】更にまた本発明は、上述の構成において基
板１の光入射側の端面１Ａに無反射コート層３を形成す
ることによって、より戻り光を低減化できる。Further, according to the present invention, the return light can be further reduced by forming the non-reflection coating layer 3 on the light incident side end face 1A of the substrate 1 in the above-described configuration.
【００１８】また、基板１の光入射側の端面１Ａを斜め
研磨して構成することによって、戻り光量を更に低減化
することができる。Further, by forming the end face 1A of the substrate 1 on the light incident side by oblique polishing, the amount of returning light can be further reduced.
【００１９】また更に本発明は、上述の光導波路装置に
おいて、光導波路２の光出射側の端面２Ｂをも基板１の
光出射側の端面１Ｂに対して内側に設けて構成すること
により、この出射側の光導波路端面２Ｂにおける反射を
も抑制することができて、光源への戻り光量を更に低減
化することができる。Further, the present invention provides the above-described optical waveguide device in which the light emitting side end face 2B of the optical waveguide 2 is also provided inside the light emitting side end face 1B of the substrate 1 so as to achieve this. It is also possible to suppress the reflection at the optical waveguide end face 2B on the emission side, and it is possible to further reduce the amount of light returning to the light source.
【００２０】[0020]
【実施例】以下本発明実施例を詳細に説明する。この例
においては、ＬｉＮｂＯ3 （ＬＮ）より成る基板１を用
いて、この上にＴｉ拡散法によってその主面１Ｓ上に光
導波路２を形成した場合を示す。Embodiments of the present invention will be described below in detail. In this example, a case is shown in which a substrate 1 made of LiNbO 3 (LN) is used and an optical waveguide 2 is formed on a main surface 1S thereof by a Ti diffusion method.
【００２１】先ず図１に示すように、光導波路２の光入
射側の端面２Ａを基板１の光入射側の端面１Ａに対し間
隔ｄを５０〜５００μｍ、例えば１００μｍとして内側
に形成して光導波路装置を構成した。また基板１の端面
１Ａには無反射コート層３いわゆるＡＲコートを被着し
て、よりこの基板１の端面１Ａにおける反射光を低減化
して、戻り光を更に抑制するようにした。First, as shown in FIG. 1, an end face 2A on the light incident side of the optical waveguide 2 is formed on the inside with a distance d of 50 to 500 μm, for example 100 μm, with respect to the end face 1A on the light incident side of the substrate 1. The device was configured. The end face 1A of the substrate 1 is coated with a non-reflection coating layer 3 so-called AR coat, so that the reflected light on the end face 1A of the substrate 1 is further reduced, and the return light is further suppressed.
【００２２】このような光導波路２の形成方法として
は、例えばＬＮ基板１の主面１Ｓ上に全面的にＴｉをス
パッタリング等により被着し、更にフォトレジストを塗
布した後パターン露光を行って現像し、このレジストパ
ターンをマスクとしてＴｉ層に対しＲＩＥ（反応性イオ
ンエッチング）等の異方性エッチングを行ってパターニ
ング形成する。そしてこの後加熱処理によりＴｉを基板
１内に拡散して、光導波路２を形成することができる。As a method for forming such an optical waveguide 2, for example, Ti is applied entirely on the main surface 1S of the LN substrate 1 by sputtering or the like, a photoresist is applied, and pattern exposure is performed, followed by development. Then, using the resist pattern as a mask, the Ti layer is patterned and formed by performing anisotropic etching such as RIE (reactive ion etching). Then, the optical waveguide 2 can be formed by diffusing Ti into the substrate 1 by the heat treatment.
【００２３】次に、図２に示すように、光導波路２の端
面２Ａを基板１の端面１Ａに対し内側に形成すると共
に、この入射側の基板端面１Ａを斜め研磨等によって主
面１Ｓに対し傾けて形成し、更にこの端面１Ａに無反射
コート層３を被着形成した。また更に光射出側の端面１
Ｂにおいて、光導波路２の光射出側端面２Ｂを内側に形
成して光導波路装置を構成した。この場合、光入射側に
おける各端面１Ａ、２Ａの間隔ｄ1 を例えば１００μ
ｍ、光射出側における各端面１Ｂ、２Ｂの間隔ｄ2を例
えば３００μｍとして形成した。Next, as shown in FIG. 2, the end surface 2A of the optical waveguide 2 is formed inside the end surface 1A of the substrate 1, and the substrate end surface 1A on the incident side is formed on the main surface 1S by oblique polishing or the like. An anti-reflection coating layer 3 was formed on the end face 1A. Further, the end surface 1 on the light emission side
In B, the light exit side end face 2B of the optical waveguide 2 was formed inside to constitute an optical waveguide device. In this case, the respective end faces 1A of the light incident side, a distance d 1 of 2A for example 100μ
m, was formed the end surface 1B of the light emitting side, a distance d 2 of 2B, for example, as a 300 [mu] m.
【００２４】このようにして作製した光導波路装置を、
図５において説明した構成をもって光源のレーザ４とし
て波長７９０ｎｍの半導体レーザを用いて、その波長ス
ペクトルを測定して戻り光の影響を確認した。この結果
を図４に示す。一方、図５に示すように光導波路２の端
面２Ａ、２Ｂが共に基板１の端面１Ａ、１Ｂと同一面と
された場合の波長スペクトルを測定した結果を図９に示
す。The optical waveguide device thus manufactured is
Using a semiconductor laser having a wavelength of 790 nm as the laser 4 of the light source having the configuration described in FIG. 5, the wavelength spectrum was measured to confirm the effect of the return light. The result is shown in FIG. On the other hand, FIG. 9 shows the result of measurement of the wavelength spectrum when the end faces 2A and 2B of the optical waveguide 2 are the same as the end faces 1A and 1B of the substrate 1 as shown in FIG.
【００２５】図４からわかるように、本発明光導波路装
置においては、矢印ｐ0 で示す０．７９０μｍ即ち７９
０ｎｍの波長の光の強度は極めて大となり、矢印ｐ 1 で
示すように隣接するサイドバンドの強度は極めて小とな
った。これに対し、図９に示す従来例においては、矢印
ｐ0 及びｐ2 で示すように、基本波と隣接するサイドバ
ンドの強度の差は殆どない。[0025] As can be seen from FIG. 4, in the present invention optical waveguide device, 0.790Myuemu i.e. 79 indicated by the arrow p 0
The intensity of the light having the wavelength of 0nm is extremely large, and the intensity of the sidebands adjacent as indicated by the arrows p 1 became extremely small. On the other hand, in the conventional example shown in FIG. 9, as shown by arrows p 0 and p 2 , the sidebar adjacent to the fundamental wave
There is almost no difference in the strength of the hands .
【００２６】即ちこの結果から、本発明構成によれば、
半導体レーザへの戻り光を格段に低減化できて、半導体
レーザの発振の安定化をはかり、モードホッピング等を
抑制してノイズの低減化、波長の単一化をはかることが
できる。That is, from this result, according to the configuration of the present invention,
Return light to the semiconductor laser can be significantly reduced, oscillation of the semiconductor laser can be stabilized, mode hopping or the like can be suppressed, noise can be reduced, and the wavelength can be unified.
【００２７】尚、上述の例においてはＬＮ基板を用いて
Ｔｉ拡散法により埋込み型の導波路を形成した場合であ
るが、この他、タンタル酸リチウム（ＬｉＴａＯ3 ）、
ガラス、チタン酸リン酸カリウム（ＫＴｉＯＰＯ4 ）等
の各種基板を用いることができ、光導波路の形成方法と
しても、Ｔｉ拡散法の他プロトン拡散法、イオン交換法
等の各種方法を用いることができることはいうまでもな
い。In the above example, a buried waveguide is formed by a Ti diffusion method using an LN substrate. In addition, lithium tantalate (LiTaO 3 ),
Various substrates such as glass and potassium titanate phosphate (KTiOPO 4 ) can be used, and various methods such as a proton diffusion method and an ion exchange method can be used as an optical waveguide forming method in addition to the Ti diffusion method. Needless to say.
【００２８】また、図１又は図２において説明したよう
な埋込み型の光導波路２を形成した後、その両側をエッ
チング等により除去して、光導波路２を基板１の表面か
らリッジ状に突出させるいわゆるリッジ型の光導波路装
置を形成することもできる。この場合においても、光導
波路の入射側又は射出側の端面２Ａを基板１の端面１Ａ
に対し内側に設け、例えば更に無反射コート層３を被着
すると共に斜め研磨を施し、また更に光射出側において
も同様に光導波路の端面２Ｂを基板端面に対し内側に設
けることによって、上述の各例と同様に端面２Ａでの反
射光を格段に低減化することができてレーザ等の光源へ
の戻り光を格段に抑制することができる。After the embedded optical waveguide 2 described with reference to FIG. 1 or FIG. 2 is formed, both sides thereof are removed by etching or the like, and the optical waveguide 2 is projected from the surface of the substrate 1 in a ridge shape. A so-called ridge-type optical waveguide device can also be formed. Also in this case, the end face 2A on the incident side or the emission side of the optical waveguide is connected to the end face 1A of the substrate 1.
For example, the antireflection coating layer 3 is further applied and oblique polishing is performed, and the end face 2B of the optical waveguide is similarly provided on the light exit side inside the end face of the substrate. As in each example, the reflected light at the end face 2A can be significantly reduced, and the return light to a light source such as a laser can be significantly suppressed.
【００２９】更に、光導波路を基板上に全面的に形成し
た後、ＳｉＯ2 等の誘電体層を導波領域上に設けると
か、Ａｌ等の金属層を導波領域以外にパターニング形成
して導波路装置を構成するいわゆる装荷型構成の光導波
路装置を形成する場合においても同様に本発明を適用す
ることができ、この場合においても光源への戻り光を格
段に抑制することができる。Further, after the optical waveguide is formed on the entire surface of the substrate, a dielectric layer such as SiO 2 is provided on the waveguide region, or a metal layer such as Al is formed by patterning other than the waveguide region to be guided. The present invention can be similarly applied to the case where a so-called loaded optical waveguide device constituting a waveguide device is formed, and even in this case, return light to the light source can be significantly suppressed.
【００３０】[0030]
【発明の効果】上述したように本発明によれば、光源か
らの入射光の光導波路端面２Ａにおける反射を格段に抑
制することができて、半導体レーザ等の光源への戻り光
を格段に低減化することができ、これによりレーザの発
振の安定化をはかってノイズの低減化をはかることがで
きる。As described above, according to the present invention, the reflection of the incident light from the light source on the end face 2A of the optical waveguide can be remarkably suppressed, and the return light to the light source such as a semiconductor laser can be remarkably reduced. This makes it possible to stabilize laser oscillation and reduce noise.
【００３１】またこの端面２Ａと基板１の端面１Ａとの
間隔を５０μｍ〜５００μｍとすることによって、入射
光量の極端な低減化を招くことなく、十分ここにおける
反射光を低減化することができる。By setting the distance between the end face 2A and the end face 1A of the substrate 1 to 50 μm to 500 μm, the reflected light can be sufficiently reduced here without causing an extreme reduction in the amount of incident light.
【００３２】更にまた光入射端面に無反射コート層を形
成する場合、或いは端面１Ａを斜め研磨することによっ
て、更に戻り光の低減化をはかってレーザ光源の安定化
をはかることができる。Further, when a non-reflection coating layer is formed on the light incident end face, or when the end face 1A is polished obliquely, the return light can be further reduced and the laser light source can be stabilized.
【００３３】また、光導波路２の光出射側の端面２Ｂを
も基板１の光出射側の端面１Ｂに対して内側に設けて構
成することにより、この出射側の光導波路端面２Ｂにお
ける反射を抑制することができて、光源への戻り光量を
更に低減化することができる。Further, the end face 2B on the light emitting side of the optical waveguide 2 is also provided inside the end face 1B on the light emitting side of the substrate 1, so that the reflection on the end face 2B of the light guide on the emitting side is suppressed. And the amount of light returning to the light source can be further reduced.
【図１】本発明光導波路装置の一例の略線的斜視図であ
る。FIG. 1 is a schematic perspective view of an example of the optical waveguide device of the present invention.
【図２】本発明光導波路装置の他の例の略線的斜視図で
ある。FIG. 2 is a schematic perspective view of another example of the optical waveguide device of the present invention.
【図３】本発明光導波路装置の説明図である。FIG. 3 is an explanatory diagram of the optical waveguide device of the present invention.
【図４】本発明光導波路装置の特性を示す図である。FIG. 4 is a diagram showing characteristics of the optical waveguide device of the present invention.
【図５】従来の光導波路装置の構成図である。FIG. 5 is a configuration diagram of a conventional optical waveguide device.
【図６】従来の光導波路装置の一例の略線的斜視図であ
る。FIG. 6 is a schematic perspective view of an example of a conventional optical waveguide device.
【図７】従来の光導波路装置の他の例の略線的斜視図で
ある。FIG. 7 is a schematic perspective view of another example of the conventional optical waveguide device.
【図８】従来の光導波路装置の説明図である。FIG. 8 is an explanatory diagram of a conventional optical waveguide device.
【図９】従来の光導波路装置の特性を示す図である。FIG. 9 is a diagram showing characteristics of a conventional optical waveguide device.
１ 基板 １Ａ 端面 １Ｂ 端面 ２ 光導波路 ２Ａ 端面 ２Ｂ 端面 ３ 無反射コート層 ４ レーザ ５ 集光系 ６ 集光系 DESCRIPTION OF SYMBOLS 1 Substrate 1A End surface 1B End surface 2 Optical waveguide 2A End surface 2B End surface 3 Non-reflection coat layer 4 Laser 5 Light collection system 6 Light collection system
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小松 康俊 東京都品川区北品川６丁目７番35号 ソ ニー株式会社内 (56)参考文献 特開 平４−301625（ＪＰ，Ａ) 特開 平４−110905（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G02B 6/12 - 6/14 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Yasutoshi Komatsu 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (56) References JP-A-4-301625 (JP, A) JP-A Heisei 4-110905 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) G02B 6/12-6/14
Claims (5)
屈折率の光導波路が形成されて成る光導波路装置であっ
て、 上記基板の材料としてニオブ酸リチウム、タンタル酸リ
チウム、ガラス及びチタン酸リン酸カリウムのうち一種
が用いられて成り、 上記光導波路の光入射側の端面が上記基板の光入射側の
端面に対して内側に設けられて成るとともに、外部レー
ザ光が集光素子により上記光導波路の光入射側の端面に
集光されて成ることを特徴とする光導波路装置。To 1. A on one main surface of the substrate, there in the optical waveguide of higher refractive index is formed formed Ruhikarishirube waveguide device relative to the substrate
Te, lithium niobate as a material of the substrate, a tantalum Sanli
One of the following: Titanium, glass and potassium phosphate titanate
Made by is used, together with the end face of the light incident side of the optical waveguide is made provided inside the end face of the light incident side of the substrate, the external laser
The light is condensed on the light incident side end face of the optical waveguide by the light condensing element.
An optical waveguide device characterized by being condensed .
板の光入射側の端面との間隔が５０μｍ以上５００μｍ
以下とされて成ることを特徴とする上記請求項１に記載
の光導波路装置。2. A distance between an end face on the light incident side of the optical waveguide and an end face on the light incident side of the substrate is 50 μm or more and 500 μm.
2. The optical waveguide device according to claim 1, wherein:
ト層が被着されて成ることを特徴とする上記請求項１に
記載の光導波路装置。3. The optical waveguide device according to claim 1, wherein a non-reflection coating layer is applied to an end face of the substrate on a light incident side.
れて成ることを特徴とする上記請求項１に記載の光導波
路装置。4. The optical waveguide device according to claim 1, wherein an end face of the substrate on a light incident side is obliquely polished.
板の光出射側の端面に対して内側に設けられて成ること
を特徴とする上記請求項１に記載の光導波路装置。5. The optical waveguide device according to claim 1, wherein an end face on the light emission side of the optical waveguide is provided inside the end face on the light emission side of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22754092A JP3200996B2 (en) | 1992-08-26 | 1992-08-26 | Optical waveguide device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22754092A JP3200996B2 (en) | 1992-08-26 | 1992-08-26 | Optical waveguide device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0675130A JPH0675130A (en) | 1994-03-18 |
| JP3200996B2 true JP3200996B2 (en) | 2001-08-20 |
Family
ID=16862506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22754092A Expired - Fee Related JP3200996B2 (en) | 1992-08-26 | 1992-08-26 | Optical waveguide device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3200996B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6033481B1 (en) * | 2016-03-03 | 2016-11-30 | 康夫 鉄羅 | Earth top |
| US9849393B2 (en) | 2016-01-19 | 2017-12-26 | Tomy Company, Ltd. | Toy top |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4706403B2 (en) * | 2005-04-27 | 2011-06-22 | 三菱電機株式会社 | Optical wavelength conversion element and optical wavelength converter |
| JP4710046B2 (en) * | 2005-09-16 | 2011-06-29 | リコープリンティングシステムズ株式会社 | Optical recording device |
| JP4560479B2 (en) * | 2005-12-06 | 2010-10-13 | Ｏｋｉセミコンダクタ株式会社 | Manufacturing method of multimode optical interference device |
| JP2009210609A (en) * | 2008-02-29 | 2009-09-17 | Sumitomo Electric Ind Ltd | Optical waveguide body |
| JP5374106B2 (en) | 2008-09-26 | 2013-12-25 | ネオフォトニクス・セミコンダクタ合同会社 | Semiconductor optical functional device |
| JP7191720B2 (en) * | 2019-02-25 | 2022-12-19 | 京セラ株式会社 | Isolators, light sources, optical transmitters, optical switches, optical amplifiers, and data centers |
-
1992
- 1992-08-26 JP JP22754092A patent/JP3200996B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9849393B2 (en) | 2016-01-19 | 2017-12-26 | Tomy Company, Ltd. | Toy top |
| JP6033481B1 (en) * | 2016-03-03 | 2016-11-30 | 康夫 鉄羅 | Earth top |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0675130A (en) | 1994-03-18 |
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