JP3198627U - アレイ基板構造、および、接触構造 - Google Patents
アレイ基板構造、および、接触構造 Download PDFInfo
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- JP3198627U JP3198627U JP2015000225U JP2015000225U JP3198627U JP 3198627 U JP3198627 U JP 3198627U JP 2015000225 U JP2015000225 U JP 2015000225U JP 2015000225 U JP2015000225 U JP 2015000225U JP 3198627 U JP3198627 U JP 3198627U
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- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 239000010410 layer Substances 0.000 claims abstract description 460
- 239000011229 interlayer Substances 0.000 claims abstract description 111
- 239000000463 material Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 28
- 239000010409 thin film Substances 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 230000002596 correlated effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- DNAUJKZXPLKYLD-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo].[Mo] DNAUJKZXPLKYLD-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Thin Film Transistor (AREA)
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Abstract
Description
102 バッファ層
104 アクティブ層
104A ソース/ドレイン領域
104B チャネル領域
106 絶縁層
108 第一導電層
110 層間誘電層
112 接触開口
114 第二導電層
200、300 基板
202、302 バッファ層
204、308 アクティブ層
204A、308A ソース/ドレイン領域
204B、308B チャネル領域
206、306 絶縁層
208、304 導電層
210、310、312 層間誘電層
212、314 開口
212’、314’ 開口
214、316 エッチングプロセス
216、318 凹部
217、330 凹部
218、218’、320、320’ 接触開口
220、322 導電層
A、B、C、D、E アレイ基板構造
X1、X3 第一距離
X2、X4 第二距離
Claims (20)
- 接触構造であって、
基板と、
該基板上に位置するアクティブ層と、
該アクティブ層上に位置する絶縁層と、
該絶縁層上に位置する層間誘電層と、
該層間誘電層と前記絶縁層の一部を貫通し、前記アクティブ層の一部を露出させ、第一凹口部を有し、前記第一凹口部は、前記層間誘電層の底面、前記絶縁層の一側壁、及び前記アクティブ層の頂面により定められる接触開口と、
前記接触開口を充填すると共に、前記アクティブ層と電気的に接続する導電層と、を有することを特徴とする、
接触構造。 - 更に、前記基板と前記アクティブ層の間に位置するバッファ層を有し、前記接触開口は、更に、前記アクティブ層と前記バッファ層の一部を貫通して、前記アクティブ層、前記バッファ層と前記基板の一部を露出させ、前記接触開口は、更に、第二凹口部を有し、前記第二凹口部は、前記アクティブ層の底面、前記バッファ層の一側壁、及び前記基板の頂面により定められ、前記導電層は、前記接触開口が露出する前記バッファ層と前記基板の上に設置されることを特徴とする、請求項1に記載の接触構造。
- 前記絶縁層の前記側壁から、前記接触開口が露出する前記アクティブ層の一側壁は第一距離で、前記バッファ層の前記側壁から前記接触開口が露出する前記アクティブ層の前記側壁は第二距離で、前記第一距離は、前記第二距離より大きいことを特徴とする、請求項2に記載の接触構造。
- 前記第一距離は0.05〜0.5マイクロメートルであり、前記第二距離は0.01〜0.5マイクロメートルであることを特徴とする、請求項3に記載の接触構造。
- 前記アクティブ層は半導体材料を含むことを特徴とする、請求項1に記載の接触構造。
- 接触構造であって、
基板と、
該基板上に位置する絶縁層と、
該絶縁層の一部上に位置するアクティブ層と、
該アクティブ層上に位置する第一層間誘電層と、
該第一層間誘電層と前記絶縁層上間に位置する第二層間誘電層と、
該第二層間誘電層と前記第一層間誘電層の一部を貫通すると共に、前記アクティブ層の一部を露出させ、第一凹口部を有し、前記第一凹口が、前記第二層間誘電層の底面、前記第一層間誘電層の一側壁、及び前記アクティブ層の頂面により定義されてなる接触開口と、
前記接触開口を充填すると共に、前記アクティブ層と電気的に接続する導電層と、を有することを特徴とする、
接触構造。 - 更に、前記基板と前記絶縁層の間に位置するバッファ層を有し、前記接触開口は、更に、前記アクティブ層、前記絶縁層と前記バッファ層の一部を貫通すると共に、前記アクティブ層、前記絶縁層、前記バッファ層と前記基板の一部を露出させ、前記接触開口は、更に、第二凹口部を有し、前記第二凹口部は、前記アクティブ層の底面、前記絶縁層の一側壁、及び前記バッファ層の頂面により定められることを特徴とする、請求項6に記載の接触構造。
- 前記第一層間誘電層の前記側壁から、前記接触開口が露出する前記アクティブ層の一側壁までは第一距離であり、前記絶縁層の前記側壁から、前記接触開口が露出する前記アクティブ層の前記側壁までは第二距離であり、前記第一距離は前記第二距離より大きいことを特徴とする、請求項7に記載の接触構造。
- 前記第一距離は0.05〜0.5マイクロメートルであり、前記第二距離は0.01〜0.5マイクロメートルであることを特徴とする、請求項8に記載の接触構造。
- 記アクティブ層は半導体材料を含むことを特徴とする、請求項6に記載の接触構造。
- アレイ基板構造であって、
基板と、
該基板の一部上に位置するアクティブ層と、
該アクティブ層と前記バッファ層上に位置する絶縁層と、
該絶縁層の上及び前記アクティブ層の一部の上に位置する第一導電層と、
該第一導電層と前記絶縁層上に設置される層間誘電層と、
該層間誘電層と前記絶縁層の一部を貫通すると共に、前記アクティブ層の一部を露出させ、第一凹口部を有し、前記第一凹口部は、前記層間誘電層の底面、前記絶縁層の一側壁、及び前記アクティブ層の頂面により定められる接触開口と、
前記接触開口を充填すると共に、前記アクティブ層と電気的に接続する第二導電層と、を有することを特徴とする、
アレイ基板構造。 - 更に、前記基板と前記アクティブ層の間に位置するバッファ層を有し、前記接触開口は、更に、前記アクティブ層と前記バッファ層の一部を貫通して、前記アクティブ層、前記バッファ層と前記基板の一部を露出させ、前記接触開口は、更に、第二凹口部を有し、前記第二凹口部は、前記アクティブ層の底面、前記バッファ層の一側壁、及び前記基板の頂面により定められ、前記導電層は、さらに、前記接触開口が露出する前記バッファ層と前記基板の上に設置されることを特徴とする、請求項11に記載のアレイ基板構造。
- 前記絶縁層の前記側壁から、前記接触開口が露出する前記アクティブ層の一側壁までは第一距離、前記バッファ層の前記側壁から、前記接触開口が露出する前記アクティブ層の前記側壁までは第二距離であり、前記第一距離は、前記第二距離より大きいことを特徴とする、請求項12に記載のアレイ基板構造。
- 前記第一距離は0.05〜0.5マイクロメートルであり、前記第二距離は0.01〜0.5マイクロメートルであることを特徴とする、請求項13に記載のアレイ基板構造。
- 前記アクティブ層は半導体材料を含むことを特徴とする、請求項11に記載のアレイ基板構造。
- アレイ基板構造であって、
基板と、
該基板の一部上に位置する第一導電層と、
該第一導電層上に位置する絶縁層と、
該絶縁層の一部上、ならびに、前記第一導電層の上に位置するアクティブ層と、
該アクティブ層上に設置される第一層間誘電層と、
該第一層間誘電層と前記絶縁層上に設置される第二層間誘電層と、
該第二層間誘電層と前記第一層間誘電層の一部を貫通すると共に、前記アクティブ層の一部を露出させ、主体部と第一凹口部を有し、前記第一凹口部が、前記第二層間誘電層の底面、前記第一層間誘電層の一側壁、及び前記アクティブ層の頂面により定められる接触開口と、
前記接触開口を充填すると共に、前記アクティブ層と電気的に接続する第二導電層と、を有することを特徴とする、
アレイ基板構造。 - 更に、前記基板と前記絶縁層の間に位置するバッファ層を有し、前記接触開口は、更に、前記アクティブ層、前記絶縁層と前記バッファ層の一部を貫通して、前記アクティブ層、前記絶縁層、前記バッファ層と前記基板の一部を露出させ、前記接触開口は、更に、第二凹口部を有し、前記第二凹口部は、前記アクティブ層の底面、前記絶縁層の一側壁、及び前記バッファ層の頂面により定められることを特徴とする、請求項16に記載のアレイ基板構造。
- 前記第一層間誘電層の前記側壁から、前記接触開口が露出する前記アクティブ層の一側壁までは第一距離、前記絶縁層の前記側壁から、前記接触開口が露出する前記アクティブ層の前記側壁までは第二距離であり、前記第一距離は前記第二距離より大きいことを特徴とする、請求項17に記載のアレイ基板構造。
- 前記第一距離は0.05〜0.5マイクロメートルであり、前記第二距離は0.01〜0.5マイクロメートルであることを特徴とする、請求項18に記載のアレイ基板構造。
- 前記アクティブ層は半導体材料を含むことを特徴とする、請求項16に記載のアレイ基板構造。
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