JP3198555B2 - Semiconductor device mounting method - Google Patents
Semiconductor device mounting methodInfo
- Publication number
- JP3198555B2 JP3198555B2 JP26509091A JP26509091A JP3198555B2 JP 3198555 B2 JP3198555 B2 JP 3198555B2 JP 26509091 A JP26509091 A JP 26509091A JP 26509091 A JP26509091 A JP 26509091A JP 3198555 B2 JP3198555 B2 JP 3198555B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- solder
- substrate
- bonding
- connection terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/13076—Plural core members being mutually engaged together, e.g. through inserts
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置のうち、
フェイスダウンで実装されるフリップチップＩＣの実装
方法に関するものである。BACKGROUND OF THE INVENTION The present invention relates to a semiconductor device,
The present invention relates to a method for mounting a flip-chip IC mounted face-down.
【０００２】[0002]
【従来の技術】従来、半導体チップの端子接続法として
フリップチップボンディングがあり、このフリップチッ
プボンディングには、フラックスを用いたハンダリフロ
ー法が一般的である。2. Description of the Related Art Conventionally, flip chip bonding has been used as a method of connecting terminals of a semiconductor chip, and a solder reflow method using a flux is generally used for the flip chip bonding.
【０００３】[0003]
【発明が解決しようとする課題】ところが、ハンダリフ
ロー法では、基板側にハンダダムが必要なため技術面、
コスト面で問題があり、又、フラックスの洗浄工程もコ
ストアップの要因となる。However, in the solder reflow method, a solder dam is required on the substrate side, so that the technical aspect,
There is a problem in terms of cost, and the flux washing step also causes an increase in cost.
【０００４】そこで、この発明の目的は、フラックスを
用いることなく接合強度を確保しながらフリップチップ
ボンディングできる半導体装置の実装方法を提供するに
ある。An object of the present invention is to provide a method of mounting a semiconductor device capable of performing flip-chip bonding while securing the bonding strength without using a flux.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載の発明
は、半導体チップに形成したチップ側接続端子と、基板
に形成した基板側接続端子とを電気的に接続するに際
し、前記チップ側接続端子と基板側接続端子との間に、
少なくともスズを含む低融点金属を介在させ、空気中に
おいてこの低融点金属の融点よりも低い温度で、前記半
導体チップと基板との間を加圧して低融点金属を塑性変
形させるとともに密着面以外の低融点金属を酸化皮膜で
覆いつつ密着面の外側への濡れ拡がりを抑制しながら接
合し、該接合に続き、前記半導体チップと基板との間を
加圧することなく、空気中において前記低融点金属の融
点以上の温度で加熱するようにした半導体装置の実装方
法をその要旨とするものである。According to a first aspect of the present invention, a method for electrically connecting a chip-side connection terminal formed on a semiconductor chip to a substrate-side connection terminal formed on a substrate is provided. Between the terminal and the board side connection terminal.
At least a low-melting-point metal containing tin is interposed, and in the air, at a temperature lower than the melting point of the low-melting-point metal, the low-melting-point metal is plastically deformed by applying pressure between the semiconductor chip and the substrate, and the other than the contact surface. The low-melting point metal is covered with an oxide film and joined while suppressing the spread of wet to the outside of the contact surface. Following the joining , the semiconductor chip and the substrate are joined.
Melting of the low melting point metal in air without pressurization
The gist of the present invention is a method for mounting a semiconductor device which is heated at a temperature not lower than a point .
【０００６】[0006]
【作用】請求項１に記載の発明によれば、チップ側接続
端子と基板側接続端子との間に、少なくともスズを含む
低融点金属が介在され、空気中においてこの低融点金属
の融点よりも低い温度で、半導体チップと基板との間を
加圧して低融点金属が塑性変形される。そして、その塑
性変形に際し、密着面以外の低融点金属が酸化皮膜で覆
われて、密着面の外側への濡れ拡がりが抑制されながら
接合が行われる。続いて、半導体チップと基板との間を
加圧することなく、空気中において前記低融点金属の融
点以上の温度で加熱する。 According to the first aspect of the present invention, a low-melting metal containing at least tin is interposed between the chip-side connection terminal and the substrate-side connection terminal. The low melting point metal is plastically deformed by applying pressure between the semiconductor chip and the substrate at a low temperature. Then, at the time of the plastic deformation, the low-melting-point metal other than the contact surface is covered with the oxide film, and the joining is performed while suppressing the spread of wet to the outside of the contact surface. Then, between the semiconductor chip and the substrate
Melting of the low melting point metal in air without pressurization
Heat at a temperature above the point.
【０００７】[0007]
【実施例】以下、この発明を具体化した一実施例を図面
に従って説明する。本実施例では、ガラス基板（液晶表
示装置）上に半導体チップを直載するＣＯＧ（Ｃhip Ｏ
n Ｇlass）製品に具体化している。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. In this embodiment, a COG (Chip O) in which a semiconductor chip is directly mounted on a glass substrate (liquid crystal display device) is used.
n Glass) products.
【０００８】図２にはガラス基板１上にＩＣチップ２が
直接ボンディングされた状態を示す。又、図１は、ボン
ディング部分（端子部分）の拡大図である。以下に、こ
のボンディング方法を説明する。FIG. 2 shows a state in which an IC chip 2 is directly bonded on a glass substrate 1. FIG. 1 is an enlarged view of a bonding portion (terminal portion). Hereinafter, this bonding method will be described.
【０００９】まず、図３にはボンディング前のＩＣチッ
プ２の端子部分を示す。ＩＣチップ２の表面（図３では
下面）にはチップ側接続端子としてアルミ電極３が形成
され、その表面はパッシベーション層４にて覆われてい
る。又、アルミ電極３の一部が露出され、この露出部分
において、アルミ電極３上にはクロムやチタンよりなる
バリアメタル５が形成されている。そのバリアメタル５
上には銅バンプ６が配置され、銅バンプ６の表面にはハ
ンダ７が配置されている。このハンダ７としては、Ｐｂ
−６３Ｓｎ（共晶ハンダ）が用いられており、このハン
ダの融点は１８３℃である。このチップ側電極は、バリ
アメタル５を蒸着後、銅及びハンダの連続メッキを行
い、さらに、不活性雰囲気炉中２５０℃にてリフローす
ることにより電極先端部を半球状としている。FIG. 3 shows a terminal portion of the IC chip 2 before bonding. An aluminum electrode 3 is formed on the surface (the lower surface in FIG. 3) of the IC chip 2 as a chip-side connection terminal, and the surface is covered with a passivation layer 4. Further, a part of the aluminum electrode 3 is exposed, and a barrier metal 5 made of chromium or titanium is formed on the aluminum electrode 3 in this exposed portion. The barrier metal 5
A copper bump 6 is arranged on the upper side, and a solder 7 is arranged on the surface of the copper bump 6. As the solder 7, Pb
-63Sn (eutectic solder) is used, and the melting point of this solder is 183 ° C. The tip-side electrode has a hemispherical tip by performing continuous plating of copper and solder after vapor deposition of the barrier metal 5 and reflowing at 250 ° C. in an inert atmosphere furnace.
【００１０】一方、ボンディング前のガラス基板１を図
５（平面図）に示すとともに、図４にはボンディング部
分（端子部分）の拡大図（縦断面図）を示す。図５に示
すように、ガラス基板１は、ソーダガラス上に液晶表示
部８と液晶駆動用ＩＣ実装部９とが形成されている。そ
して、ＩＣ実装部９にはＩＣチップ２のバンプに対応し
たランドと入出力配線がパターニングされている。つま
り、図４に示すように、チップ側接続端子としての導電
パターン１０が形成されている。導電パターン１０は三
層構造をなし、ソーダガラス上にＩＴＯ（インジウム・
スズ・オキサイド）層１１とニッケル層１２と金層１３
とが順に積層されている。この積層構造は、ＩＴＯ／Ｎ
ｉ／Ａｕを蒸着，メッキにて形成される。ここで、表面
の金層１３は、配線母材としてのＩＴＯ層１１とニッケ
ル層１２の酸化防止材となっている。On the other hand, the glass substrate 1 before bonding is shown in FIG. 5 (plan view), and FIG. 4 is an enlarged view (longitudinal sectional view) of a bonding portion (terminal portion). As shown in FIG. 5, the glass substrate 1 has a liquid crystal display section 8 and a liquid crystal drive IC mounting section 9 formed on soda glass. Lands and input / output wirings corresponding to the bumps of the IC chip 2 are patterned in the IC mounting section 9. That is, as shown in FIG. 4, the conductive pattern 10 as the chip-side connection terminal is formed. The conductive pattern 10 has a three-layer structure, and is made of ITO (indium
Tin oxide layer 11, nickel layer 12, and gold layer 13
Are sequentially stacked. This laminated structure is ITO / N
i / Au is formed by vapor deposition and plating. Here, the gold layer 13 on the surface is an antioxidant for the ITO layer 11 and the nickel layer 12 as the wiring base material.
【００１１】そして、ボンディングの際には、ガラス基
板１を所定位置に置き、吸着ヘッドによりＩＣチップ２
をガラス基板１の上方に搬送し、位置合わせを行う。そ
して、ＩＣチップ２をガラス基板１上に載置する。その
後、ダングステン（Ｗ）製の加熱ヘッドにてＩＣチップ
２の裏面（図１，２の上面）から１つのバンプ当たり１
０〜１５０ｇの荷重をかけるとともに、加熱ヘッドの温
度を１２０〜１７０℃にして５〜１０秒間保持する。つ
まり、ハンダ７の融点の１８３℃よりも低い温度で、Ｉ
Ｃチップ２とガラス基板１との間を加圧してハンダ７を
塑性変形させながら接合する。At the time of bonding, the glass substrate 1 is placed at a predetermined position and the IC chip 2 is
Is transported above the glass substrate 1 and alignment is performed. Then, the IC chip 2 is placed on the glass substrate 1. Then, one bump per bump from the back surface of IC chip 2 (the upper surface in FIGS.
While applying a load of 0 to 150 g, the temperature of the heating head is set to 120 to 170 ° C. and held for 5 to 10 seconds. That is, at a temperature lower than the melting point of 183 ° C. of the solder 7,
The C chip 2 and the glass substrate 1 are joined while being pressurized to plastically deform the solder 7.
【００１２】このとき、加熱温度がハンダ７の融点以下
なのでハンダ７は溶融していないが十分軟らかくなって
おり、接合部は変形し面接触となっている。又、この加
圧してハンダ７を塑性変形させながら接合させる時にハ
ンダ７の表面が先送りされ、新鮮なハンダが露出されて
接合界面が作られる。そして、導電パターン１０でのＡ
ｕ（金）は接合部近傍のハンダ７中にほぼ拡散してお
り、ニッケルも界面のＳｎ粒子に少量拡散していること
が確認できている。これには、ＥＤＸ分析法による断面
分析を行った。At this time, since the heating temperature is equal to or lower than the melting point of the solder 7, the solder 7 is not melted but is sufficiently soft, and the joint is deformed and comes into surface contact. In addition, when the solder 7 is joined while being plastically deformed by applying the pressure, the surface of the solder 7 is advanced, and fresh solder is exposed to form a joining interface. Then, A in the conductive pattern 10
It has been confirmed that u (gold) is almost diffused into the solder 7 near the joint, and nickel is also slightly diffused into the Sn particles at the interface. For this, a cross-sectional analysis was performed by EDX analysis.
【００１３】この接合の際に、空気中で加熱されている
ためダムが無くても密着面以外のハンダ７は酸化皮膜で
覆われて密着面の外側への濡れ拡がりが抑制される。さ
らに、端子数や端子サイズ（図１のＬで示す）に応じて
加熱ヘッドによる加圧力を調整することにより接続面
積、ハンダバンプ形状を容易に調整することができる。
よって、ノンフラックスでフリップチップの多端子接続
がバラツキなく行える。At the time of this joining, since the solder 7 is heated in the air, even if there is no dam, the solder 7 other than the contact surface is covered with the oxide film, and the spread of the wet to the outside of the contact surface is suppressed. Further, the connection area and the shape of the solder bump can be easily adjusted by adjusting the pressing force by the heating head according to the number of terminals and the terminal size (indicated by L in FIG. 1).
Therefore, flip-chip multi-terminal connection can be performed without variation without using flux.
【００１４】尚、局部加熱は、加熱ヘッドによらずに、
レーザをバンプ部分に照射することにより行ってもよ
い。ここで、前述の接合条件について説明すると、加熱
時間（５〜１０秒）は、加熱ヘッドから基板側へ熱伝導
が行われるに十分な時間であり、かつ、生産性を確保す
るための上限の時間である。又、加熱温度の下限の１２
０℃は、図６に示すように、ハンダ７が必要な軟らかさ
が得られる温度とし、加熱温度の上限の１７０℃は、図
７に示すように、必要な接合強度（２ｋｇ／チップ）を
得るための温度とした。即ち、図７において、プロット
点Ｐ４，Ｐ５に示す１８０℃では接合が弱く、プロット
点Ｐ１，Ｐ２，Ｐ３に示す１５０〜１７０℃では接合が
強い。尚、図８に示すように、２００℃以上に加熱した
のでは、ハンダ７が溶融してしまい空気中では濡れ拡が
りはなく、必要な接合強度は得られない。Incidentally, the local heating is performed without using the heating head.
The irradiation may be performed by irradiating the bump portion with a laser. Here, the above-mentioned joining conditions will be described. The heating time (5 to 10 seconds) is a time sufficient for heat conduction from the heating head to the substrate side, and an upper limit for securing productivity. Time. The lower limit of the heating temperature is 12
As shown in FIG. 6, 0 ° C. is a temperature at which the required softness is obtained by the solder 7, and 170 ° C., which is the upper limit of the heating temperature, is a value at which the necessary bonding strength (2 kg / chip) is obtained as shown in FIG. Temperature to obtain. That is, in FIG. 7, the bonding is weak at 180 ° C. shown at plot points P4 and P5, and the bonding is strong at 150 to 170 ° C. shown at plot points P1, P2 and P3. As shown in FIG. 8, if the heating is performed at 200 ° C. or higher, the solder 7 melts, does not spread in the air and does not have a necessary bonding strength.
【００１５】引き続き、本実施例では、さらに強固な接
合を得るために第２の工程として次の処理を行ってい
る。つまり、加熱ヘッドにてＩＣチップ２を１８３〜２
５０℃の温度（ハンダ７の融点以上）で、５〜３０秒間
加熱する。この時、ガラス基板１とＩＣチップ２とは加
圧せずに、ＩＣチップ２の自重のみとする。その結果、
前工程にてハンダ７と導電パターン１０（配線材料）と
が密面していた部分（つまり、接続界面）に存在したＡ
ｕ（金）はハンダ７中へ均一に拡散する。よって、Ａｕ
／Ｓｎ界面にＡｕ（金）が残っていることによる強度低
下を回避できる。又、ハンダ７中のＳｎ成分と導電パタ
ーン１０のＮｉ（ニッケル）との合金層が成長する。Subsequently, in the present embodiment, the following processing is performed as a second step in order to obtain a stronger bonding. In other words, the IC chip 2 is heated to 183 to 2
Heat at a temperature of 50 ° C. (above the melting point of solder 7) for 5 to 30 seconds. At this time, the glass substrate 1 and the IC chip 2 are not pressurized, and only the weight of the IC chip 2 is used. as a result,
The A existing in the portion where the solder 7 and the conductive pattern 10 (wiring material) were in close contact (that is, the connection interface) in the previous step.
u (gold) diffuses uniformly into the solder 7. Therefore, Au
A decrease in strength due to Au (gold) remaining at the / Sn interface can be avoided. Also, an alloy layer of the Sn component in the solder 7 and Ni (nickel) of the conductive pattern 10 grows.
【００１６】この第２工程では圧力を加えないのでハン
ダ７がつぶれることはない。又、この第２の工程におい
ても局部加熱はレーザをバンプ部分に照射することによ
り行ってもよい。図７において、プロット点Ｐ６は、プ
ロット点Ｐ１での加熱温度１５０℃，４．４ｋｇ荷重で
の処理後に第２の工程としてレーザをバンプ部分に照射
して２３０℃に加熱した場合であり、第２の工程を追加
して行うことにより引っ張り強度の向上が確認できた。
又、第１の工程後、接合部は面状に密着しているので、
第２の工程においては酸化防止のための水素リフローを
行うことなく空気中で行うことができる。In the second step, no pressure is applied, so that the solder 7 does not collapse. Also in this second step, the local heating may be performed by irradiating a laser to the bump portion. In FIG. 7, a plot point P6 is a case where, after the treatment at the plot point P1 at a heating temperature of 150 ° C. and a load of 4.4 kg, the bump portion is irradiated with a laser as a second step and heated to 230 ° C. It was confirmed that the tensile strength was improved by adding the second step.
Also, after the first step, the joint is in close contact with the surface,
The second step can be performed in air without performing hydrogen reflow for preventing oxidation.
【００１７】このように本実施例では、ＩＣチップ２
（半導体チップ）に形成したアルミ電極３（チップ側接
続端子）と、ガラス基板１に形成した導電パターン１０
（基板側接続端子）とを電気的に接続するに際し、アル
ミ電極３と導電パターン１０との間に、ハンダ７（少な
くともスズを含む低融点金属）を介在させ、このハンダ
７の融点の１８３℃よりも低い１２０〜１７０℃で、Ｉ
Ｃチップ２とガラス基板１との間を加圧してハンダ７を
塑性変形させながら接合するようにした。その結果、フ
ラックスを用いることなく（無フラックス・無洗浄工
程）、接合強度を確保しながらフリップチップボンディ
ングできることとなる。又、高温も必要としない半導体
装置の実装方法となり、ＣＯＧ（Ｃhip Ｏn Ｇlass）製
品には好ましい方法となる。As described above, in this embodiment, the IC chip 2
Aluminum electrode 3 (chip-side connection terminal) formed on (semiconductor chip) and conductive pattern 10 formed on glass substrate 1
(Electrically connected to the substrate side connection terminal), a solder 7 (a low melting point metal containing at least tin) is interposed between the aluminum electrode 3 and the conductive pattern 10, and the melting point of the solder 7 is 183 ° C. At 120-170 ° C lower than I
Pressure was applied between the C chip 2 and the glass substrate 1 to join the solder 7 while plastically deforming the solder 7. As a result, it is possible to perform flip chip bonding while securing the bonding strength without using a flux (no flux and no cleaning step). In addition, the method is a method of mounting a semiconductor device that does not require a high temperature, and is a preferable method for a COG (Chip On Glass) product.
【００１８】尚、この発明は上記実施例に限定されるも
のではなく、例えば、上記実施例では導電パターン１０
（配線材）をＡｕ／Ｎｉ／ＩＴＯとしたが、Ａｕ，Ｎ
ｉ，Ｓｎ，Ａｇ，Ａｇ−Ｐｄ，Ａｇ−Ｐｔ，Ｃｕなどハ
ンダが付くものであればよく、又、ハンダとしてＰｂ−
６３Ｓｎ以外の組成のハンダを使用してもよく、要は、
少なくともスズを含む低融点金属であればよい。The present invention is not limited to the above embodiment. For example, in the above embodiment , the conductive pattern 10
(Wiring material) was Au / Ni / ITO.
i, Sn, Ag, Ag-Pd, Ag-Pt, Cu, etc. may be used as long as they are soldered, and Pb-
A solder having a composition other than 63Sn may be used.
Any low melting point metal containing at least tin may be used.
【００１９】さらに、前記実施例では銅バンプ６（突起
電極）上にハンダ７を設けたが、特に突起電極を設ける
必要はなく、ハンダボールをチップ２と基板１との間に
供給する方法でもよい。Further, in the above embodiment, the solder 7 is provided on the copper bump 6 (projection electrode). However, it is not necessary to provide a projection electrode, and a method of supplying a solder ball between the chip 2 and the substrate 1 may be employed. Good.
【００２０】さらには、この発明はガラス基板に限るこ
となく、各種の基板を用いた場合にも適用できる。この
場合、液晶表示部を有しない基板に対しては通常のリフ
ロー炉で全体加熱が可能となる。Further, the present invention is not limited to a glass substrate, but can be applied to a case where various substrates are used. In this case, the entire substrate can be heated in a normal reflow furnace with no liquid crystal display.
【００２１】[0021]
【発明の効果】以上詳述したようにこの発明によれば、
フラックスを用いることなく接合強度を確保しながらフ
リップチップボンディングできる優れた効果を発揮す
る。As described in detail above, according to the present invention,
It provides an excellent effect of flip chip bonding while securing the bonding strength without using flux.
【図１】本実施例のボンディング部分（端子部分）の拡
大図である。FIG. 1 is an enlarged view of a bonding portion (terminal portion) of the present embodiment.
【図２】ボンディング後の状態を示す図である。FIG. 2 is a diagram showing a state after bonding.
【図３】ボンディング前のＩＣチップの端子部分を示す
図である。FIG. 3 is a diagram showing a terminal portion of an IC chip before bonding.
【図４】ボンディング前のガラス基板の端子部分を示す
図である。FIG. 4 is a diagram showing a terminal portion of a glass substrate before bonding.
【図５】ボンディング前のガラス基板の平面図である。FIG. 5 is a plan view of the glass substrate before bonding.
【図６】ハンダの温度とヤング率との関係を示す図であ
る。FIG. 6 is a diagram showing a relationship between solder temperature and Young's modulus.
【図７】各種条件での垂直引っ張り強度の測定結果を示
す図である。FIG. 7 is a diagram showing measurement results of vertical tensile strength under various conditions.
【図８】温度に対する垂直引っ張り強度の測定結果を示
す図である。FIG. 8 is a diagram showing a measurement result of a vertical tensile strength with respect to a temperature.
１ ガラス基板 ２ 半導体チップとしてのＩＣチップ ３ チップ側接続端子としてのアルミ電極 ７ ハンダ １０ 基板側接続端子としての導電パターン DESCRIPTION OF SYMBOLS 1 Glass substrate 2 IC chip as a semiconductor chip 3 Aluminum electrode as a chip side connection terminal 7 Solder 10 Conductive pattern as a board side connection terminal
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 311 H01L 21/60 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/60 311 H01L 21/60
Claims (1)
子と、基板に形成した基板側接続端子とを電気的に接続
するに際し、前記チップ側接続端子と基板側接続端子と
の間に、少なくともスズを含む低融点金属を介在させ、
空気中においてこの低融点金属の融点よりも低い温度
で、前記半導体チップと基板との間を加圧して低融点金
属を塑性変形させるとともに密着面以外の低融点金属を
酸化皮膜で覆いつつ密着面の外側への濡れ拡がりを抑制
しながら接合し、該接合に続き、前記半導体チップと基
板との間を加圧することなく、空気中において前記低融
点金属の融点以上の温度で加熱するようにしたことを特
徴とする半導体装置の実装方法。When electrically connecting a chip-side connection terminal formed on a semiconductor chip and a substrate-side connection terminal formed on a substrate, at least tin is provided between the chip-side connection terminal and the substrate-side connection terminal. Intervening a low melting point metal containing
At a temperature lower than the melting point of the low-melting metal in air, the pressure between the semiconductor chip and the substrate is pressed to plastically deform the low-melting metal, and the low-melting metal other than the adhesion surface is covered with an oxide film while being covered with an oxide film. Bonding while suppressing the spread of wet to the outside of the semiconductor chip.
The low melting point in air without pressurizing
A method of mounting a semiconductor device, wherein the semiconductor device is heated at a temperature equal to or higher than a melting point of a point metal .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26509091A JP3198555B2 (en) | 1991-10-14 | 1991-10-14 | Semiconductor device mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26509091A JP3198555B2 (en) | 1991-10-14 | 1991-10-14 | Semiconductor device mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05109820A JPH05109820A (en) | 1993-04-30 |
| JP3198555B2 true JP3198555B2 (en) | 2001-08-13 |
Family
ID=17412461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26509091A Expired - Fee Related JP3198555B2 (en) | 1991-10-14 | 1991-10-14 | Semiconductor device mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3198555B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3265814B2 (en) * | 1994-04-07 | 2002-03-18 | 株式会社デンソー | Circuit board having bump electrodes |
| US7969015B2 (en) | 2005-06-14 | 2011-06-28 | Cufer Asset Ltd. L.L.C. | Inverse chip connector |
| TWI445147B (en) | 2009-10-14 | 2014-07-11 | Advanced Semiconductor Eng | Semiconductor device |
| TW201113962A (en) | 2009-10-14 | 2011-04-16 | Advanced Semiconductor Eng | Chip having metal pillar structure |
| TWI478303B (en) | 2010-09-27 | 2015-03-21 | Advanced Semiconductor Eng | Chip having metal pillar and package having the same |
| US8884443B2 (en) | 2012-07-05 | 2014-11-11 | Advanced Semiconductor Engineering, Inc. | Substrate for semiconductor package and process for manufacturing |
| US8686568B2 (en) | 2012-09-27 | 2014-04-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor package substrates having layered circuit segments, and related methods |
-
1991
- 1991-10-14 JP JP26509091A patent/JP3198555B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05109820A (en) | 1993-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3329276B2 (en) | Interconnect structure with conductive adhesive | |
| JP3800977B2 (en) | Products using Zn-Al solder | |
| US6495397B2 (en) | Fluxless flip chip interconnection | |
| JP3829325B2 (en) | Semiconductor element, manufacturing method thereof, and manufacturing method of semiconductor device | |
| EP1374297B1 (en) | Flip chip interconnection using no-clean flux | |
| US5470787A (en) | Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same | |
| US8101866B2 (en) | Packaging substrate with conductive structure | |
| US5233504A (en) | Noncollapsing multisolder interconnection | |
| JPH06103703B2 (en) | Soldering method | |
| TWI284973B (en) | Flip-chip joint structure, and fabricating process thereof | |
| JPH09134934A (en) | Semiconductor package and semiconductor device | |
| US5985692A (en) | Process for flip-chip bonding a semiconductor die having gold bump electrodes | |
| US8779300B2 (en) | Packaging substrate with conductive structure | |
| JP3198555B2 (en) | Semiconductor device mounting method | |
| JP2000150574A (en) | Semiconductor device and bonding method using solder | |
| JP2001044606A (en) | Mounting structure body of semiconductor package, its mounting method and rework method | |
| JP2813409B2 (en) | Connection method of semiconductor chip | |
| JP3308060B2 (en) | Semiconductor device mounting method | |
| JPH02278743A (en) | Junction structure of indium solder | |
| JPH05136216A (en) | Semiconductor mounting device | |
| JP2881088B2 (en) | Method for manufacturing semiconductor device | |
| JP3284034B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3351091B2 (en) | Semiconductor device mounting method | |
| JP2000151086A (en) | Printed circuit unit and its manufacture | |
| JPH07122591A (en) | Mounting method for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |