JP3174351B2 - Gasification vessel for superconducting MOCVD - Google Patents
Gasification vessel for superconducting MOCVDInfo
- Publication number
- JP3174351B2 JP3174351B2 JP08148591A JP8148591A JP3174351B2 JP 3174351 B2 JP3174351 B2 JP 3174351B2 JP 08148591 A JP08148591 A JP 08148591A JP 8148591 A JP8148591 A JP 8148591A JP 3174351 B2 JP3174351 B2 JP 3174351B2
- Authority
- JP
- Japan
- Prior art keywords
- carrier gas
- gasification
- mocvd
- oxide superconducting
- superconducting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化物超電導膜形成用
の固体原料をガス化するための容器に関し、ガス化速度
の一定性に優れるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for gasifying a solid raw material for forming an oxide superconducting film, and has an excellent gasification rate.
【０００２】[0002]
【従来の技術】Ｙ、Ｂa、Ｃuの如き酸化物超電導膜の形
成元素をβ−ジケトンキレート化合物化するなどして蒸
発しやすくした固体原料をガス化し、それを支持基材上
に供給して酸化物超電導膜を形成するＭＯＣＶＤ法が提
案されている。2. Description of the Related Art A solid raw material which is easily vaporized by converting an element forming an oxide superconducting film such as Y, Ba, or Cu into a β-diketone chelate compound or the like is gasified and supplied to a supporting base material. An MOCVD method for forming an oxide superconducting film has been proposed.
【０００３】従来、前記ＭＯＣＶＤ法に用いるガス化容
器としては、粉末化した固体原料を単に投入保持するよ
うにした、キャリアガスの入出口付の容器が知られてい
た。しかしながら、固体原料のガス化速度の変動が大き
く、ガス化速度を一定化させるための制御操作も困難
で、形成される酸化物超電導膜の品質、ないし超電導特
性のバラツキが大きい問題点があった。Heretofore, as a gasification container used in the MOCVD method, a container having a carrier gas inlet / outlet, which is designed to simply charge and hold a powdered solid material, has been known. However, the gasification rate of the solid raw material fluctuates greatly, it is difficult to control the gasification rate to be constant, and the quality of the formed oxide superconducting film or the superconducting characteristics vary greatly. .
【０００４】[0004]
【発明が解決しようとする課題】本発明は、固体原料の
ガス化効率に優れ、ガス化速度を容易に制御できてその
一定化が容易なＭＯＣＶＤ法に用いるガス化容器の開発
を課題とする。SUMMARY OF THE INVENTION The object of the present invention is to develop a gasification vessel which is excellent in the gasification efficiency of a solid raw material, can easily control the gasification rate and can easily stabilize the gasification rate, and is used for MOCVD. .
【０００５】[0005]
【課題を解決するための手段】本発明は、酸化物超電導
膜形成用の固体原料をガス化するための容器であり、キ
ャリアガスの入口と出口を有する容器本体の内部に、キ
ャリアガスの通気孔を複数有する固体原料保持棚を配置
し、その固体原料保持棚の上部に邪魔板を配置してなる
ことを特徴とする超電導ＭＯＣＶＤ用ガス化容器を提供
するものである。SUMMARY OF THE INVENTION The present invention is a container for gasifying a solid raw material for forming an oxide superconducting film. The carrier gas is passed through a container body having an inlet and an outlet for the carrier gas. It is an object of the present invention to provide a gasification vessel for superconducting MOCVD, wherein a solid material holding shelf having a plurality of pores is arranged, and a baffle plate is arranged above the solid material holding shelf.
【０００６】[0006]
【実施例】本発明の超電導ＭＯＣＶＤ用ガス化容器を図
１に例示した。１がキャリアガスの入口１３と出口１４
を有する容器本体、２が複数の通気孔２１を有する固体
原料保持棚、３が邪魔板である。図例のガス化容器は、
外部加熱方式（図示せず）により加熱して、酸化物超電
導膜形成用の粉末化した固体原料Ｓをガス化するように
したものである。本発明では、ガス化容器の内部又は外
周に加熱装置を配備することもできる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a gasification vessel for superconducting MOCVD according to the present invention. 1 is a carrier gas inlet 13 and an outlet 14
, A solid material holding shelf 2 having a plurality of ventilation holes 21, and 3 a baffle plate. The gasification vessel in the figure is
Heating is performed by an external heating method (not shown) to gasify the powdered solid raw material S for forming the oxide superconducting film. In the present invention, a heating device may be provided inside or on the outer periphery of the gasification vessel.
【０００７】容器本体１は、底板１１と蓋部１２よりな
り、開閉可能となっている。底板１１にはキャリアガス
の入口１３が設けられており、蓋部１２にはキャリアガ
スの出口１４が設けられている。なお本発明において
は、容器本体を始めとする各部品は、加熱温度に耐える
金属やセラミックなどの耐熱性材料で形成される。[0007] The container body 1 comprises a bottom plate 11 and a lid portion 12 and can be opened and closed. The bottom plate 11 is provided with a carrier gas inlet 13, and the lid 12 is provided with a carrier gas outlet 14. In the present invention, each component such as the container body is formed of a heat-resistant material such as metal or ceramic that can withstand the heating temperature.
【０００８】固体原料保持棚２は、支持足２３を介して
容器本体の底板１１の上に支持されている。固体原料保
持棚２に設けた各通気孔２１に対しては、案内筒２２が
取り付けられている。案内筒２２は、通気孔２１を通過
したキャリアガスを固体原料Ｓからなる層の上部に誘導
するためのものである。The solid material holding shelf 2 is supported on the bottom plate 11 of the container body via support legs 23. A guide tube 22 is attached to each ventilation hole 21 provided in the solid material holding shelf 2. The guide tube 22 is for guiding the carrier gas that has passed through the vent hole 21 to the upper portion of the layer made of the solid raw material S.
【０００９】邪魔板３は、キャリアガスの誘導路となる
間隙を設けて固体原料保持棚２の上部に配置されてい
る。邪魔板３の支持は、容器本体の蓋部１２や、固体原
料保持棚２などを利用して適宜に行ってよい。The baffle plate 3 is arranged above the solid material holding shelf 2 with a gap serving as a carrier gas guide path. The baffle plate 3 may be appropriately supported by using the lid 12 of the container body, the solid material holding shelf 2, and the like.
【００１０】[0010]
【作用】上記実施例のガス化容器においては、キャリア
ガスが矢印の如く容器本体１の入口１３から供給され
る。供給されたキャリアガスは、固体原料保持棚２に設
けた複数の通気孔２１と案内筒２２を介して、固体原料
保持棚２と固体原料層（Ｓ）を通過し、邪魔板３に突き
当たる。突き当たったキャリアガスは方向転換し、邪魔
板３の下面に沿って流動し、固体原料層の上を通過す
る。ついでキャリアガスは、邪魔板３と容器本体１の蓋
部内壁との間隙をぬって邪魔板３の上部に至り、矢印の
如く容器本体１の出口１４を介して流出する。なお、容
器本体１の出口１４より流出したキャリアガスは、酸化
物超電導膜を付設すべき支持基材上に供給される。In the gasification vessel of the above embodiment, the carrier gas is supplied from the inlet 13 of the vessel body 1 as shown by the arrow. The supplied carrier gas passes through the solid raw material holding shelf 2 and the solid raw material layer (S) through the plurality of ventilation holes 21 and the guide tube 22 provided in the solid raw material holding shelf 2 and hits the baffle plate 3. The impinged carrier gas changes direction, flows along the lower surface of the baffle plate 3, and passes over the solid raw material layer. Next, the carrier gas passes through the gap between the baffle plate 3 and the inner wall of the lid of the container body 1, reaches the upper portion of the baffle plate 3, and flows out through the outlet 14 of the container body 1 as indicated by an arrow. The carrier gas flowing out from the outlet 14 of the container body 1 is supplied onto a support substrate on which the oxide superconducting film is to be provided.
【００１１】前記において、酸化物超電導膜を形成する
ための固体原料を加熱して発生させたガスは、キャリア
ガスを介して容器本体１の出口１４に誘導される。その
場合、キャリアガスが邪魔板３の下面に沿って固体原料
層の上を流動するため、発生ガスが効率よく移送され、
ガス化効率が向上する。また、キャリアガスの流速を制
御することによりガス化速度を調節することができ、キ
ャリアガスの定速化でガス化速度を一定化できて、変動
を抑制することができる。In the above, the gas generated by heating the solid material for forming the oxide superconducting film is guided to the outlet 14 of the container body 1 via the carrier gas. In that case, since the carrier gas flows on the solid raw material layer along the lower surface of the baffle plate 3, the generated gas is efficiently transferred,
Gasification efficiency is improved. Further, the gasification rate can be adjusted by controlling the flow rate of the carrier gas, and the gasification rate can be made constant by making the carrier gas constant, thereby suppressing fluctuation.
【００１２】なお上記において、容器本体１の出口１４
より流出したキャリアガスは、酸化物超電導膜を形成す
べき目的域に供給される。その目的域は通例、支持基材
等を配置した反応室等として形成されており、その支持
基材上で原料ガスを熱分解させる方式などにより、目的
とする酸化物超電導膜が形成される。In the above description, the outlet 14 of the container body 1
The carrier gas that has flowed out is supplied to a target area where an oxide superconducting film is to be formed. The target area is usually formed as a reaction chamber or the like in which a support substrate or the like is disposed, and a target oxide superconducting film is formed on the support substrate by a method of thermally decomposing a source gas.
【００１３】発生ガスを移送するためのキャリアガスと
しては、アルゴンガス、窒素ガス、ヘリウムガスの如き
不活性ガスが一般に用いられる。ガス化容器内に配置す
る固体原料としては、目的とする酸化物超電導膜に応
じ、その形成元素を例えばキレート化物やハロゲン化物
などとした、就中高蒸気圧化合物とした適宜なものを用
いてよい。本発明においては種々の酸化物超電導膜を形
成することができ、その種類については特に限定はな
い。なお固体原料は通例、粉末の状態で用いられる。As a carrier gas for transferring the generated gas, an inert gas such as an argon gas, a nitrogen gas and a helium gas is generally used. As the solid raw material placed in the gasification vessel, an appropriate element may be used, particularly a high vapor pressure compound, such as a chelate or a halide, for example, depending on the intended oxide superconducting film, the forming element of which may be a chelate or a halide. . In the present invention, various oxide superconducting films can be formed, and the type is not particularly limited. The solid raw material is usually used in a powder state.
【００１４】ちなみに、形成しうる酸化物超電導膜を構
成する超電導体の具体例としては、ＹＢa2Ｃu3ＯyやＹ
Ｂa2Ｃu4Ｏyの如きＹ系酸化物超電導体、Ｂa1-xＫxＢi
Ｏ3の如きＢa系酸化物超電導体、Ｎd2-xＣexＣuＯyの如
きＮd系酸化物超電導体、Ｂi2Ｓr2ＣaＣu2Ｏy、Ｂi2-x
ＰbxＳr2Ｃa2Ｃu3Ｏyの如きＢi系酸化物超電導体、その
他Ｌa系酸化物超電導体、Ｔl系酸化物超電導体、Ｐb系
酸化物超電導体などがあげられる。また、前記のＹ等の
成分を他の希土類元素で置換したものや、Ｂa等の成分
を他のアルカリ土類金属で置換したものなどもあげられ
る。[0014] Incidentally, specific examples of the superconductor constituting the formed can oxide superconducting film, YBa 2 Cu 3 O y and Y
Y-based oxide superconductor such as Ba 2 Cu 4 O y , Ba 1-x K x Bi
Ba-based oxide superconductor such as O 3 , Nd - based oxide superconductor such as Nd 2-x Ce x CuO y , Bi 2 Sr 2 CaCu 2 O y , Bi 2-x
Pb x Sr 2 Ca 2 Cu 3 O y such Bi-based oxide superconductor, other La-based oxide superconductor, Tl-based oxide superconductors, such as Pb-based oxide superconductor and the like. In addition, those obtained by substituting the aforementioned component such as Y with another rare earth element, those obtained by substituting the component such as Ba with another alkaline earth metal, and the like are also included.
【００１５】[0015]
【発明の効果】本発明の超電導ＭＯＣＶＤ用ガス化容器
によれば、酸化物超電導膜形成用の固体原料からなる層
の上面に沿ってキャリアガスを通過させることができ、
ガス化効率に優れると共にガス化速度の変動を抑制して
容易に一定化することができる。その結果、品質、ない
し超電導特性に優れる酸化物超電導膜を安定して形成す
ることができる。According to the gasification vessel for superconducting MOCVD of the present invention, a carrier gas can be passed along the upper surface of a layer made of a solid material for forming an oxide superconducting film,
The gasification efficiency is excellent, and the fluctuation of the gasification rate can be suppressed to easily stabilize. As a result, an oxide superconducting film having excellent quality or superconducting properties can be stably formed.
【図１】実施例の部分断面説明図。FIG. 1 is a partial sectional explanatory view of an embodiment.
１：容器本体 １３：入口 １４：出口 ２：固体原料保持棚 ２１：通気孔 ３：邪魔板 Ｓ：酸化物超電導膜形成用の固体原料 1: container body 13: inlet 14: outlet 2: solid material holding shelf 21: vent hole 3: baffle plate S: solid material for forming oxide superconducting film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内田 英一 兵庫県尼崎市東向島西之町８番地 三菱 電線工業株式会社内 (56)参考文献 特開 平３−274274（ＪＰ，Ａ) 特開 平２−204310（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C01G 1/00 C30B 1/00 - 35/00 C23C 16/00 - 16/56 H01L 39/24 ＣＡ（ＳＴＮ) ＪＩＣＳＴファイル（ＪＯＩＳ)──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Eiichi Uchida 8 Nishinocho, Higashikojima, Amagasaki City, Hyogo Prefecture Inside Mitsubishi Cable Industries, Ltd. (56) References JP-A-3-274274 (JP, A) JP-A-Hei 2-204310 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C01G 1/00 C30B 1/00-35/00 C23C 16/00-16/56 H01L 39/24 CA ( STN) JICST file (JOIS)
Claims (1)
化するための容器であり、キャリアガスの入口と出口を
有する容器本体の内部に、キャリアガスの通気孔を複数
有する固体原料保持棚を配置し、その固体原料保持棚の
上部に邪魔板を配置してなることを特徴とする超電導Ｍ
ＯＣＶＤ用ガス化容器。1. A container for gasifying a solid material for forming an oxide superconducting film, the solid material holding shelf having a plurality of carrier gas vents inside a container body having an inlet and an outlet for a carrier gas. And a baffle plate is arranged above the solid material holding shelf.
Gasification vessel for OCVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08148591A JP3174351B2 (en) | 1991-03-19 | 1991-03-19 | Gasification vessel for superconducting MOCVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08148591A JP3174351B2 (en) | 1991-03-19 | 1991-03-19 | Gasification vessel for superconducting MOCVD |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04292406A JPH04292406A (en) | 1992-10-16 |
| JP3174351B2 true JP3174351B2 (en) | 2001-06-11 |
Family
ID=13747709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08148591A Expired - Fee Related JP3174351B2 (en) | 1991-03-19 | 1991-03-19 | Gasification vessel for superconducting MOCVD |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3174351B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| KR101389011B1 (en) * | 2012-03-28 | 2014-04-24 | 주식회사 유니텍스 | Source container and reactor for vapor phase deposition |
| WO2013181521A2 (en) | 2012-05-31 | 2013-12-05 | Advanced Technology Materials, Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
-
1991
- 1991-03-19 JP JP08148591A patent/JP3174351B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04292406A (en) | 1992-10-16 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |