JP3161177B2 - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JP3161177B2 JP3161177B2 JP22267893A JP22267893A JP3161177B2 JP 3161177 B2 JP3161177 B2 JP 3161177B2 JP 22267893 A JP22267893 A JP 22267893A JP 22267893 A JP22267893 A JP 22267893A JP 3161177 B2 JP3161177 B2 JP 3161177B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode body
- metal plate
- semiconductor substrate
- curved portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Thyristors (AREA)
- Die Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、サイリスタのように半
導体基板の一面上に主電極と制御電極を有し、主電極へ
の接続が加圧接触で行われる半導体素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, such as a thyristor, having a main electrode and a control electrode on one surface of a semiconductor substrate, and being connected to the main electrode by pressure contact.
【０００２】[0002]
【従来の技術】サイリスタのような半導体基板の一面上
に主電極と制御電極を有する半導体素子の大容量のもの
では、大面積の主電極への電気的接続の信頼性向上のた
めに主電極のみ電極体を加圧接触させる構造が採用され
る。その場合、特に制御電極の形状が非円形であると、
電極体と制御電極との短絡を防ぐため、電極体と主電極
の間に、制御電極に接触しない形状をもつ金属板を挿入
することが行われる。図３はそのような組立構造をもつ
サイリスタ素子の断面を示し、支持板２の上に固着され
たサイリスタエレメント１は、セラミック側壁３とそれ
に可とう性のフランジ41、42を介して結合されているカ
ソード電極体51、アノード電極体52とからなる容器中に
収容されるが、カソード電極体51とエレメントの間に
は、例えばMoからなる厚さ0.１mmの金属板６が挿入され
ている。図５はサイリスタエレメント１の平面図で、中
央にゲート電極11、その周りに放射状の張り出し部をも
つアンプゲート電極12が設けられ、カソード電極13はそ
の周囲をとり囲んでいる。エレメントの外周部はシリコ
ーンゴムなどの接合被覆樹脂７で覆われている。金属板
６は図６に示すように、このような非円形のアンプゲー
ト電極12に電極体51が接触しないように、アンプゲート
電極12と相似形の開口部61を中心に有する。このような
金属板６の開口部61は、アンプゲート電極12に対してず
れないように位置決めする必要があり、その方法とし
て、エレメント１のカソード電極13の面の上に金属板６
を置き、カソード電極13と金属板６の間に隙間がなくな
るまで加圧した状態で、図４に拡大して示すように、金
属板６の外周部とエレメント１の外周部とを接着剤８で
接着する。接着剤８には熱硬化型のシリコーン樹脂を用
いるのが一般的で、硬化するまで加圧状態を維持する。
エレメント１および支持板２とカソード電極体51の間の
位置決めは、ふっ素樹脂などで作られ、支持板２および
電極体51の外側面に接する位置決め部品９で行われる。2. Description of the Related Art In a semiconductor device having a large capacity such as a thyristor having a main electrode and a control electrode on one surface of a semiconductor substrate, a main electrode is provided to improve reliability of electrical connection to a large area main electrode. Only the structure in which the electrode body is brought into pressure contact is adopted. In that case, especially when the shape of the control electrode is non-circular,
In order to prevent a short circuit between the electrode body and the control electrode, a metal plate having a shape that does not contact the control electrode is inserted between the electrode body and the main electrode. FIG. 3 shows a cross section of a thyristor element having such an assembled structure, in which a thyristor element 1 fixed on a support plate 2 is connected to a ceramic side wall 3 via flexible flanges 41 and 42. Is accommodated in a container comprising a cathode electrode body 51 and an anode electrode body 52, and between the cathode electrode body 51 and the element, a 0.1 mm thick metal plate 6 made of, for example, Mo is inserted. . FIG. 5 is a plan view of the thyristor element 1, in which a gate electrode 11 is provided at the center, an amplifier gate electrode 12 having a radially extending portion is provided around the gate electrode 11, and a cathode electrode 13 surrounds the periphery. The outer periphery of the element is covered with a joint coating resin 7 such as silicone rubber. As shown in FIG. 6, the metal plate 6 has an opening 61 similar to the amplifier gate electrode 12 at the center so that the electrode body 51 does not contact the non-circular amplifier gate electrode 12. The opening 61 of the metal plate 6 needs to be positioned so as not to be shifted with respect to the amplifier gate electrode 12. As a method, the metal plate 6 is placed on the surface of the cathode electrode 13 of the element 1.
4 and pressurized until there is no gap between the cathode electrode 13 and the metal plate 6, and as shown in an enlarged view in FIG. Glue with Generally, a thermosetting silicone resin is used for the adhesive 8, and a pressurized state is maintained until the adhesive 8 is cured.
Positioning between the element 1 and the support plate 2 and the cathode electrode body 51 is performed by a positioning component 9 made of fluororesin or the like and in contact with the outer surfaces of the support plate 2 and the electrode body 51.
【０００３】[0003]
【発明が解決しようとする課題】ところが、このような
組立構造では、図４に示すように接着剤８が金属板６と
エレメント１の外周部の間に入りこみ、金属板６とエレ
メント１の間にすき間が生じ、外部からカソード電極体
51をアノード電極体52に対して加圧しても、エレメント
１の外周部ではこのすき間は解消せず、接触面積が減少
するという問題がある。However, in such an assembly structure, the adhesive 8 enters between the metal plate 6 and the outer peripheral portion of the element 1 as shown in FIG. A gap is created in the cathode electrode body from outside.
Even when the anode 51 is pressed against the anode electrode body 52, there is a problem that the gap is not eliminated at the outer peripheral portion of the element 1 and the contact area is reduced.
【０００４】本発明の目的はこの問題を解決し、金属板
とエレメント主電極面との間に加圧接触時にすき間の生
じない半導体素子を提供することにある。An object of the present invention is to solve this problem and to provide a semiconductor element in which no gap is generated when a metal plate and an element main electrode surface are brought into contact with each other under pressure.
【０００５】[0005]
【課題を解決するための手段】上述の目的を達成するた
めに、本発明は、一面上に主電極と制御電極とを有する
半導体基板が絶縁性側壁とそれに可とう的に結合された
両電極体とからなる容器に収容され、外周部が半導体基
板の外周部に接着される金属板を介して主電極 と電極体
が外部からの加圧により電気的に接続される半導体素子
において、金属板が半導体基板の外周部との接着部と電
極体に対向する部分との間に湾曲部を有し、該湾曲部に
よって空間が形成されているものとする。湾曲部が半導
体基板側に開くＵ字状断面を有すること、さらにその場
合、湾曲部のＵ字状断面の一端が電極体の外側面に近接
していることが有効である。In order to achieve the above-mentioned object, the present invention provides a semiconductor device having a main electrode and a control electrode on one surface, both electrodes having an insulative side wall and a flexible electrode connected thereto. And a semiconductor substrate
Main electrode and electrode body via metal plate adhered to the outer periphery of the plate
In the semiconductor device but which are electrically connected by pressure from the outside, it has a curved portion between the portion facing the bonding portion and the electrode body and the outer peripheral portion of the metal plate is a semiconductor substrate, in the curved portion
Therefore, it is assumed that a space is formed . It is effective that the curved portion has a U-shaped cross section that opens to the semiconductor substrate side, and in that case, one end of the U-shaped cross section of the curved portion is close to the outer surface of the electrode body.
【０００６】[0006]
【作用】金属板の半導体基板の外周部との接着部と電極
体に対向する部分との間に設けられた湾曲部の空間に接
着剤が入り込むことにより、電極体に対向する部分の金
属板と半導体基板との間まで接着剤が達することがな
く、基板の主電極面と電極体を介して加圧される金属板
との接触面に接着剤によるすき間が生ずることがない。
さらにその湾曲部の内側が電極体の外側面に近接してい
れば、電極体は金属板に対して、ひいては金属板と接着
された半導体基板に対し位置決めされることになり、従
来の位置決め部品は不要になる。[Action] By adhesive in the space of the curved portion provided between the adhesive portion and the electrode body portion facing to the outer peripheral portion of the semiconductor substrate of the metal plate enters, gold portion facing the electrostatic electrode body
The adhesive does not reach the space between the metal plate and the semiconductor substrate, and no gap is generated by the adhesive on the contact surface between the main electrode surface of the substrate and the metal plate pressed through the electrode body.
Furthermore, if the inside of the curved portion is close to the outer surface of the electrode body, the electrode body will be positioned with respect to the metal plate, and eventually with respect to the semiconductor substrate bonded to the metal plate, and the conventional positioning component Becomes unnecessary.
【０００７】[0007]
【実施例】以下、図３、図４と共通の部分に同一の符号
を付した図を引用して本発明の実施例について説明す
る。図１は本発明の一実施例のサイリスタエレメント付
近のみを示し、金属板６の外周部に断面Ｕ字状の高さ１
mmの湾曲部10が形成されている。エレメント１の外周部
を被覆しているＪＣＲ７と金属板６とを接着する接着剤
８は、過剰な場合にも湾曲部10内の空間に溜り、エレメ
ント１のカソード電極13の面上に入り込むことはない。
図２に容器を含めて断面で示す別の実施例のサイリスタ
素子では、金属板１の湾曲部10の内側面がカソード電極
体51の外側面に接しており、これによりエレメント１に
対しカソード電極体51が位置決めされるので、図３の位
置決め部品９が不要となる。金属板６には、厚さ0.５mm
のMo板が用いられるので、湾曲部10はプレス加工により
容易に形成できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings in which the same reference numerals are given to parts common to FIGS. FIG. 1 shows only the vicinity of a thyristor element according to an embodiment of the present invention.
A mm curved portion 10 is formed. The adhesive 8 for bonding the JCR 7 covering the outer peripheral portion of the element 1 and the metal plate 6 is accumulated in the space in the curved portion 10 even in an excessive case, and enters the surface of the cathode electrode 13 of the element 1. There is no.
In the thyristor element of another embodiment shown in cross section including the container in FIG. 2, the inner surface of the curved portion 10 of the metal plate 1 is in contact with the outer surface of the cathode electrode body 51. Since the body 51 is positioned, the positioning component 9 of FIG. 3 is not required. The metal plate 6 has a thickness of 0.5 mm
Since the Mo plate is used, the curved portion 10 can be easily formed by press working.
【０００８】[0008]
【発明の効果】本発明によれば、加圧接触により接続す
べき半導体基板と電極体の間に挿入される金属板の端に
プレス加工で容易に形成できる湾曲部が設けられるため
に、半導体基板の外周部と金属板を接着剤で接着して
も、接着剤が過剰でも湾曲部内の空間に溜り半導体基板
の主電極面上に入り込む事がなくなり、加圧時に金属板
が主電極全面に接触するため、素子の良品率を向上する
ことができる。また金属板の湾曲部の位置を電極体の外
周に合わせる事で、電極体の半導体基板に対する位置決
めができ、位置決め部品を廃止する事ができる。According to the present invention, since a curved portion which can be easily formed by press working is provided at an end of a metal plate inserted between a semiconductor substrate to be connected by pressure contact and an electrode body, a semiconductor is provided. Even if the outer peripheral portion of the substrate and the metal plate are bonded with an adhesive, even if the adhesive is excessive , the metal plate does not accumulate in the space in the curved portion and enter the main electrode surface of the semiconductor substrate. Because of the contact, the non-defective rate of the element can be improved. Also By aligning the outer circumference of the position of the electrode body of the curved portion of the metal plate, it is positioned with respect to the semiconductor substrate of the electrode body, it can be abolished positioning unit products.
【図１】本発明の一実施例のサイリスタ素子のエレメン
ト付近の断面図FIG. 1 is a sectional view showing the vicinity of an element of a thyristor element according to an embodiment of the present invention.
【図２】本発明の別の実施例のサイリスタ素子の断面図FIG. 2 is a sectional view of a thyristor element according to another embodiment of the present invention.
【図３】従来のサイリスタ素子の断面図FIG. 3 is a sectional view of a conventional thyristor element.
【図４】図３の素子のエレメント付近の拡大断面図FIG. 4 is an enlarged cross-sectional view of the element of FIG. 3 in the vicinity of the element;
【図５】サイリスタエレメントの平面図FIG. 5 is a plan view of a thyristor element.
【図６】従来の金属板の平面図FIG. 6 is a plan view of a conventional metal plate.
１ サイリスタエレメント １３ カソード電極 ２ 支持板 ３ セラミック側壁 ４１、４２ フランジ ５１ カソード電極体 ５２ アノード電極体 ６ 金属板 ７ ＪＣＲ ８ 接着剤 １０ 金属板湾曲部 DESCRIPTION OF SYMBOLS 1 Thyristor element 13 Cathode electrode 2 Support plate 3 Ceramic side wall 41, 42 Flange 51 Cathode electrode body 52 Anode electrode body 6 Metal plate 7 JCR 8 Adhesive 10 Metal plate curved part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 29/74 H01L 21/52 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 29/74 H01L 21/52
Claims (3)
体基板が絶縁性側壁とそれに可とう的に結合される両電
極体とからなる容器に収容され、外周部が半導体基板の
外周部に接着される金属板を介して主電極と電極体が外
部からの加圧により電気的に接続されるものにおいて、
金属板が半導体基板の外周部との接着部と電極体に対向
する部分との間に湾曲部を有し、該湾曲部によって空間
が形成されていることを特徴とする半導体素子。A semiconductor substrate having a main electrode and a control electrode on one surface is housed in a container comprising an insulating side wall and both electrode bodies flexibly coupled thereto, and an outer peripheral portion of the semiconductor substrate is provided.
The main electrode and the electrode body are separated via a metal plate adhered to the outer periphery.
In those electrically connected by pressurization from the part ,
Metal plates have a curved portion between the portion facing the bonding portion and the electrode body and the outer peripheral portion of the semiconductor substrate, the space by the curved portion
Semiconductor element characterized that you have but formed.
有する請求項１記載の半導体素子。2. The semiconductor device according to claim 1, wherein the curved portion has a U-shaped cross section that opens toward the semiconductor substrate.
面に近接している請求項２記載の半導体素子。3. The semiconductor device according to claim 2, wherein one end of the U-shaped cross section of the curved portion is close to the outer surface of the electrode body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22267893A JP3161177B2 (en) | 1993-09-08 | 1993-09-08 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22267893A JP3161177B2 (en) | 1993-09-08 | 1993-09-08 | Semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0778966A JPH0778966A (en) | 1995-03-20 |
| JP3161177B2 true JP3161177B2 (en) | 2001-04-25 |
Family
ID=16786214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22267893A Expired - Fee Related JP3161177B2 (en) | 1993-09-08 | 1993-09-08 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3161177B2 (en) |
-
1993
- 1993-09-08 JP JP22267893A patent/JP3161177B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0778966A (en) | 1995-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |