JP3140595U - 発光半導体素子 - Google Patents
発光半導体素子 Download PDFInfo
- Publication number
- JP3140595U JP3140595U JP2008000240U JP2008000240U JP3140595U JP 3140595 U JP3140595 U JP 3140595U JP 2008000240 U JP2008000240 U JP 2008000240U JP 2008000240 U JP2008000240 U JP 2008000240U JP 3140595 U JP3140595 U JP 3140595U
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting semiconductor
- sealing substrate
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000007789 sealing Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 238000007499 fusion processing Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】
封止基板と、前記封止基板上に実装されるとともに、電気的に接続されている複数のフリップチップと、前記封止基板を載置するための突起部を有している熱伝導性基板と、
前記突起部を中に嵌着するための開口部を有し、しかも前記封止基板を電気的に接続するための複数のコンタクトを有している絶縁性板材と、を備えたことを特徴とする発光半導体素子。
【選択図】図1A
Description
101 … … 封止基板
102 … … 発光ダイオードチップ
103 … … 熱伝導性基板
104 … … 絶縁性板材
105 … … 突起部
106 … … 開口部
107 … … コンタクト
108 … … リード線
109 … … ボンディングパッド
110 … … 内部接続線
111 … … ボンディングパッド
112 … … 外部の電子素子
113 … … 混色カップ
114 … … 反射鏡
115 … … バンプ
200 … … 発光ダイオード素子
215 … … 発光ダイオードチップ
216 … … ボンディングワイヤ
B … … 青色発光ダイオードチップ
G … … 緑色発光ダイオードチップ
R … … 赤色発光ダイオードチップ
Claims (10)
- 封止基板と、
前記封止基板上に実装されるとともに、電気的に接続されている複数のフリップチップと、
前記封止基板を載置するための突起部を有している熱伝導性基板と、
前記突起部を中に嵌着するための開口部を有し、しかも前記封止基板を電気的に接続するための複数のコンタクトを有している絶縁性板材と、
を備えたことを特徴とする発光半導体素子。 - 前記フリップチップが、発光ダイオードチップ、高効率の発光ダイオードチップ、レーザダイオードチップおよび前記任意の組み合わせからなる群から選ばれるものであることを特徴とする請求項1に記載の発光半導体素子。
- 前記熱伝導性基板が、電気めっき処理が施されているアルミニウム基板、または共晶の融合(Eutectic)工程により前記アルミニウム基板に結合されている、ことを特徴とする請求項1に記載の発光半導体素子。
- 前記封止基板がシリコン基板である、ことを特徴とする請求項1に記載の発光半導体素子。
- 前記封止基板が、
複数のバンプにより、前記複数のフリップチップを前記封止基板上に固着するとともに電気的に接続する複数のボンディングパッドと、
各々の一端が前記複数のボンディングパッドのいずれかに接続され、他端が前記複数のコンタクトのいずれかに接続されている複数本のリード線と、
を備えた、ことを特徴とする請求項1に記載の発光半導体素子。 - 前記複数のフリップチップが、対称配列の方式で、前記封止基板の上に実装されるとともに電気的に接続されている、ことを特徴とする請求項1に記載の発光半導体素子。
- 前記封止基板上に実装されるとともに、前記複数のフリップチップの外周に隣接しており、複数本のボンディングワイヤにより前記コンタクトにそれぞれ電気的に接続されている少なくとも一つの表面実装チップを更に備えた、ことを特徴とする請求項5に記載の発光半導体素子。
- 前記複数のコンタクトが、前記絶縁性板材中における複数本の内部接続線により、外部の電子素子にそれぞれ電気的に接続されている、ことを特徴とする請求項7に記載の発光半導体素子。
- 前記外部の電子素子が、発光半導体素子を駆動するに必要な電力を提供するためのパワーサプライである、ことを特徴とする請求項8に記載の発光半導体素子。
- 内側内壁が複数の反射鏡を有し、前記封止基板を囲んでいる混色カップを更に備えた、ことを特徴とする請求項1に記載の発光半導体素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096213508U TWM327548U (en) | 2007-08-15 | 2007-08-15 | Light emitting semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3140595U true JP3140595U (ja) | 2008-04-03 |
Family
ID=40362264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008000240U Expired - Lifetime JP3140595U (ja) | 2007-08-15 | 2008-01-21 | 発光半導体素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7816694B2 (ja) |
JP (1) | JP3140595U (ja) |
TW (1) | TWM327548U (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101124816B1 (ko) * | 2010-09-24 | 2012-03-26 | 서울옵토디바이스주식회사 | 발광다이오드 패키지 및 그 제조방법 |
TWI451605B (zh) * | 2011-03-08 | 2014-09-01 | Lextar Electronics Corp | 具有金屬反射面與散熱塊之發光二極體結構 |
US9246024B2 (en) | 2011-07-14 | 2016-01-26 | International Business Machines Corporation | Photovoltaic device with aluminum plated back surface field and method of forming same |
TW201324736A (zh) * | 2011-12-08 | 2013-06-16 | Genesis Photonics Inc | 發光裝置 |
ITTO20111212A1 (it) * | 2011-12-23 | 2013-06-24 | Gs Plastics S A S Di Giovanni Gerv Asio & C | Led di potenza |
TWI706107B (zh) * | 2014-04-07 | 2020-10-01 | 晶元光電股份有限公司 | 一種發光裝置之色溫調整方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005073621A1 (ja) * | 2004-01-29 | 2005-08-11 | Matsushita Electric Industrial Co., Ltd. | Led照明光源 |
US7687823B2 (en) * | 2006-12-26 | 2010-03-30 | Nichia Corporation | Light-emitting apparatus and method of producing the same |
-
2007
- 2007-08-15 TW TW096213508U patent/TWM327548U/zh not_active IP Right Cessation
-
2008
- 2008-01-21 JP JP2008000240U patent/JP3140595U/ja not_active Expired - Lifetime
- 2008-03-28 US US12/057,382 patent/US7816694B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090045417A1 (en) | 2009-02-19 |
US7816694B2 (en) | 2010-10-19 |
TWM327548U (en) | 2008-02-21 |
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