JP3134437B2 - Low-temperature sintered ceramic composition for multilayer substrate - Google Patents
Low-temperature sintered ceramic composition for multilayer substrateInfo
- Publication number
- JP3134437B2 JP3134437B2 JP03349048A JP34904891A JP3134437B2 JP 3134437 B2 JP3134437 B2 JP 3134437B2 JP 03349048 A JP03349048 A JP 03349048A JP 34904891 A JP34904891 A JP 34904891A JP 3134437 B2 JP3134437 B2 JP 3134437B2
- Authority
- JP
- Japan
- Prior art keywords
- low
- temperature
- multilayer substrate
- weight
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Compositions Of Oxide Ceramics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は多層基板用低温焼結磁
器組成物に関し、特にたとえば、複数の磁器層が積層化
され、磁器間に回路が形成されてなる多層磁器基板に適
した多層基板用低温焼結磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature sintered ceramic composition for a multilayer substrate, and more particularly, for example, to a multilayer substrate suitable for a multilayer ceramic substrate in which a plurality of ceramic layers are laminated and a circuit is formed between the ceramics. The present invention relates to a low-temperature sintered porcelain composition for use.
【０００２】[0002]
【従来の技術】一般に電子機器の小型化に伴い、電子回
路を構成する各種電子部品を実装するのに、磁器基板が
汎用されている。そして、最近では、実装密度をさらに
高めるために、表面に導電材料のペーストで回路パター
ンを形成した未完成の磁器シートを複数枚積層し、これ
を焼成して一体化した多層基板が開発されている。従
来、このような多層基板の材料としては、アルミナが用
いられていた。2. Description of the Related Art In general, with the miniaturization of electronic equipment, a porcelain board has been widely used for mounting various electronic components constituting an electronic circuit. Recently, in order to further increase the mounting density, a multilayer board has been developed in which a plurality of unfinished porcelain sheets each having a circuit pattern formed on the surface with a paste of a conductive material are laminated, fired and integrated. I have. Conventionally, alumina has been used as a material for such a multilayer substrate.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、アルミ
ナはその焼結温度が１５００〜１６００℃と高温である
ため、焼結に要する多量のエネルギが必要となり、コス
ト高となる。さらに、多層基板内部に形成される内部回
路の導電材料としては、高温の焼成温度に耐え得るＷや
Ｍｏなどの高融点金属に限定されるため、回路パターン
そのものの抵抗値が高くなるという欠点があった。ま
た、アルミナの熱膨張係数が、アルミナ基板の上に搭載
される半導体を構成するシリコンチップよりも大きいた
め、シリコンチップにサーマルストレスが加わり、シリ
コンチップにクラックを発生させる原因となる。さら
に、アルミナそのものの誘電率が高いため、回路の内部
を伝播する信号の遅延時間が大きくなるなどの問題点が
あった。However, since alumina has a high sintering temperature of 1500 to 1600 ° C., a large amount of energy required for sintering is required, resulting in high cost. Furthermore, since the conductive material of the internal circuit formed inside the multilayer substrate is limited to a high melting point metal such as W or Mo that can withstand a high firing temperature, there is a disadvantage that the resistance value of the circuit pattern itself increases. there were. Further, since the thermal expansion coefficient of alumina is larger than that of a silicon chip constituting a semiconductor mounted on an alumina substrate, thermal stress is applied to the silicon chip, which causes cracks in the silicon chip. Further, since the dielectric constant of alumina itself is high, there is a problem that a delay time of a signal propagating inside the circuit is increased.
【０００４】これらの問題点を解決するために、特開平
１−２３０４６２号に開示されるように、コージェライ
ト−Ｂ2 Ｏ3 −ＳｉＯ2 系材料において、熱膨張係数が
小さく、誘電率が小さく、比抵抗の高い多層基板用低温
磁器組成物が提供された。To solve these problems, as disclosed in Japanese Patent Application Laid-Open No. Hei 1-230462, a cordierite-B 2 O 3 —SiO 2 material has a small coefficient of thermal expansion and a small dielectric constant. Accordingly, a low-temperature ceramic composition for a multilayer substrate having a high specific resistance has been provided.
【０００５】一方、数Ｍ〜数十ＭＨｚ帯を使用したＬＣ
Ｒ回路内蔵型のＬＳＩ搭載用多層基板の必要性が強まっ
ている。この基板の特性として、前記特性に加えて、特
に容量の温度変化率が低く、たとえば±３０ｐｐｍ以下
であることが必要となる。On the other hand, an LC using a band of several M to several tens MHz
The necessity of a multilayer substrate for mounting an LSI with a built-in R circuit is increasing. As a characteristic of this substrate, in addition to the above-mentioned characteristics, it is necessary that the temperature change rate of the capacitance is particularly low, for example, ± 30 ppm or less.
【０００６】しかし、上記コージェライト−Ｂ2 Ｏ3 −
ＳｉＯ2 系材料は、容量の温度変化率が９０ｐｐｍ／℃
以上と大きく、上記基板材料を高周波対応の２ＣＲ内蔵
基板に応用するには、制限があった。However, the above cordierite-B 2 O 3-
SiO 2 material has a temperature change rate of capacity of 90 ppm / ° C.
As described above, there is a limitation in applying the above-mentioned substrate material to a high-frequency compatible 2CR built-in substrate.
【０００７】それゆえに、この発明の主たる目的は、比
較的低温で焼結可能で、熱膨張係数が小さく、誘電率が
小さく、容量の温度変化率がきわめて低い多層基板用低
温磁器組成物を提供することである。SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a low-temperature ceramic composition for a multilayer substrate which can be sintered at a relatively low temperature, has a small coefficient of thermal expansion, a small dielectric constant, and a very low rate of temperature change of capacitance. It is to be.
【０００８】[0008]
【課題を解決するための手段】この発明は、コージェラ
イトが４０〜８５重量％と、Ｂ2 Ｏ3 が１０〜４０重量
％と、ＳｉＯ2 が５〜５０重量％とからなる主成分１０
０重量部に、副成分としてＴｉＯ2 を１５〜２０重量部
添加した、多層基板用低温焼結磁器組成物である。SUMMARY OF THE INVENTION The present invention, main component 10 made of cordierite 40 to 85 wt%, B and 2 O 3 is 10 to 40 wt%, SiO 2 is 5-50 wt%
0 parts by weight, as a sub-component and the TiO 2 was 15-20 weight parts <br/> addition, a low temperature sintering ceramic composition for multilayer substrate.
【０００９】[0009]
【作用】ＴｉＯ2 は負の温度係数をもつ材料であり、コ
ージェライト−Ｂ2 Ｏ3 −ＳｉＯ2 系材料に添加混焼す
ることによって、温度係数の絶対値が小さくなる。[Action] TiO 2 is a material having a negative temperature coefficient, by co-firing added to cordierite -B 2 O 3 -SiO 2 based materials, the absolute value of the temperature coefficient becomes smaller.
【００１０】[0010]
【発明の効果】この発明によれば、比較的低温で焼結可
能で、熱膨張係数が小さく、誘電率が小さく、より広い
周波数帯域において容量の温度変化率がきわめて低い多
層基板用低温磁器組成物が得られる。According to the present invention, a multilayer which can be sintered at a relatively low temperature, has a small coefficient of thermal expansion, a small dielectric constant, and has a very low rate of temperature change of capacitance in a wider frequency band. A low-temperature porcelain composition for a substrate is obtained.
【００１１】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
【００１２】[0012]
【実施例】まず、コージェライトの原料であるＳｉ
Ｏ2 ，ＭｇＯまたはＭｇＣＯ3 ，Ａｌ2 Ｏ3 を秤量混合
し、混合物を得た。この混合物を１３５０〜１４００℃
で仮焼し、図１に示す組成のコージェライト仮焼物を得
た。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, Si, which is a raw material of cordierite, is used.
O 2 , MgO or MgCO 3 , Al 2 O 3 were weighed and mixed to obtain a mixture. This mixture is 1350-1400 ° C
To obtain a cordierite calcined product having the composition shown in FIG.
【００１３】次に、このコージェライト原料と、他の主
成分構成材料であるＢ2 Ｏ3 ，ＢＮまたはＢ4 Ｃおよび
ＳｉＯ2 と、添加物構成材料であるＴｉＯ2 とを準備
し、表１に示す組成の磁器が得られるように秤量混合
し、混合物を得た。Next, this cordierite raw material, B 2 O 3 , BN or B 4 C and SiO 2 which are other main constituent materials, and TiO 2 which is an additive constituent material were prepared. Were weighed and mixed so as to obtain a porcelain having the composition shown in Table 1 to obtain a mixture.
【００１４】[0014]
【表１】 [Table 1]
【００１５】そして、この混合物を８００〜９００℃の
温度で仮焼し、粉砕し、粉末を得た。この粉末に有機バ
インダを加えて混練し、スラリを得た。得られたスラリ
をドクターブレード法にて厚さ１ｍｍのシート状に成形
し、セラミックグリーンシートを得た。このセラミック
グリーンシートを縦３０ｍｍ，横１０ｍｍの大きさにカ
ットし、水蒸気中に通過させた窒素をキャリヤガスとす
る窒素−水蒸気の還元性もしくは非酸化性雰囲気中にお
いて、９００℃の温度でバインダ成分を燃焼させ、表１
に示す各温度で１時間焼成して、磁器を得た。また、前
記セラミックグリーンシートを縦３ｍｍ，横４０ｍｍの
角板状にカットし、これを積層して、２００ｋｇ／ｃｍ
2 で加圧して、約４ｍｍ×３ｍｍ×４０ｍｍの角柱状に
した。そして、これを上記の方法で焼成し、熱膨張係
数，抗折強度などを測定する測定用試料とした。The mixture was calcined at a temperature of 800 to 900 ° C. and pulverized to obtain a powder. An organic binder was added to this powder and kneaded to obtain a slurry. The obtained slurry was formed into a sheet having a thickness of 1 mm by a doctor blade method to obtain a ceramic green sheet. This ceramic green sheet is cut into a size of 30 mm in length and 10 mm in width, and a binder component is formed at a temperature of 900 ° C. in a reducing or non-oxidizing atmosphere of nitrogen-steam using nitrogen passed through steam as a carrier gas. Table 1
Was fired at each of the temperatures shown for 1 hour to obtain porcelain. Further, the ceramic green sheet was cut into a square plate having a length of 3 mm and a width of 40 mm, and the sheets were laminated to form a 200 kg / cm
It was pressurized by 2 to form a prism of about 4 mm × 3 mm × 40 mm. Then, this was fired by the above method to obtain a measurement sample for measuring the coefficient of thermal expansion, bending strength, and the like.
【００１６】このようにして得られた各試料についての
各特性の測定結果を表１に示す。なお、表１中の添加物
の量は、主成分であるコージェライト−ＳｉＯ2 −Ｂ2
Ｏ3 系に対する外添加量であり、より具体的には、コー
ジェライト中への固溶量とＳｉＯ2 −Ｂ2 Ｏ3 中への添
加量とを合わせたものである。Table 1 shows the measurement results of each characteristic of each sample thus obtained. The amounts of additives in Table 1 are based on cordierite-SiO 2 -B 2
It is the external addition amount to the O 3 system, and more specifically, it is the sum of the solid solution amount in cordierite and the addition amount in SiO 2 —B 2 O 3 .
【００１７】比誘電率は周波数１ＭＨｚで測定した値で
あり、比抵抗は試料に直流１００Ｖを印加したときの値
である。また、線熱膨張係数αは、 α ＝ ｛ΔＬ／Ｌ（Ｔ2 −Ｔ1 ）｝＋αＳｉＯ2 の式によって算出した値である。ここで、ΔＬは加熱に
よる試料の見掛けの伸び（ｍｍ）、Ｌは室温での試料の
長さ（ｍｍ）、Ｔ1 は室温、Ｔ2は５００℃、αＳｉＯ
2 は石英ガラスの熱膨張係数である。抗折強度は、ＪＩ
Ｓ規格（Ｒ１６０１）の３点曲げ法に従って測定した値
である。また、気孔率はアルキメデス法で測定した密度
より算出した値である。The relative permittivity is a value measured at a frequency of 1 MHz, and the specific resistance is a value when a direct current of 100 V is applied to the sample. The coefficient of linear thermal expansion α is a value calculated by the equation α = {ΔL / L (T 2 −T 1 )} + αSiO 2 . Here, ΔL is the apparent elongation of the sample due to heating (mm), L is the length of the sample at room temperature (mm), T 1 is room temperature, T 2 is 500 ° C., αSiO
2 is the thermal expansion coefficient of quartz glass. Flexural strength is JI
It is a value measured according to the three-point bending method of the S standard (R1601). The porosity is a value calculated from the density measured by the Archimedes method.
【００１８】表１に示すように、ＴｉＯ2 の添加量を変
化させることによって、容量の温度変化率を容易に制御
でき、温度係数を±３０ｐｐｍ以下にすることもでき
る。また、この発明の組成物は比較的低温で焼結可能
で、熱膨張係数が小さく、誘電率が小さいなど従来の特
性も満たす。As shown in Table 1, by changing the amount of TiO 2 added, the rate of temperature change of the capacity can be easily controlled, and the temperature coefficient can be reduced to ± 30 ppm or less. Further, the composition of the present invention can be sintered at a relatively low temperature, has a small coefficient of thermal expansion, and satisfies conventional characteristics such as a small dielectric constant.
【００１９】なお、コージェライトとは２ＭｇＯ・２Ａ
ｌ2 Ｏ3・５ＳｉＯ2 の他、アメリカンセラミックソサ
イアティ（ＴｈｅＡｍｅｒｉｃａｎ Ｃｅｒａｍｉｃ
Ｓｏｃｉｅｔｙ），コロンブス（Ｃｏｌｕｍｂｕｓ），
１９６４のイーエヌレビンら（Ｅ．Ｎ．Ｌｅｖｉｎ ｅ
ｔ ａｌ．）によるセラミックのフェーズダイアグラム
（Ｐｈａｓｅ Ｄｉａｇｒａｍｓ ｆｏｒ Ｃｅｒａｍ
ｉｃ）のＰ２４６，図７１２に開示されている組成範囲
から構成されるものであり、より具体的には、図１にお
ける領域Ａのものである。図２はこの発明の組成物の主
成分組成比を示す主成分組成図であり、領域Ｂがこの発
明の組成物の主成分の範囲である。It should be noted that cordierite is 2MgO.2A
In addition to l 2 O 3 .5SiO 2 , the American Ceramic Society (The American Ceramic Society)
Society), Columbus,
1964, EN Levin et al.
t al. ), The phase diagram of the ceramic (Phase Diagrams for Ceram)
ic) P246, and the composition range disclosed in FIG. 712, and more specifically, the region A in FIG. FIG. 2 is a main component composition diagram showing the main component composition ratio of the composition of the present invention, and region B is the range of the main component of the composition of the present invention.
【００２０】上記のように組成範囲を限定した理由は次
の通りである。The reasons for limiting the composition range as described above are as follows.
【００２１】すなわち、コージェライトが４０重量％未
満では、機械的強度が低く、一方８５重量％を超える
と、焼結温度が高くなる。また、Ｂ2 Ｏ3 が１０重量％
未満では、焼結温度が高くなり、一方４０重量％を超え
ると、多孔質になり機械的強度が低くなる。That is, if the cordierite content is less than 40% by weight, the mechanical strength is low, while if it exceeds 85% by weight, the sintering temperature becomes high. B 2 O 3 is 10% by weight.
If it is less than 40%, the sintering temperature will be high, while if it exceeds 40% by weight, it will be porous and the mechanical strength will be low.
【００２２】添加物であるＴｉＯ2 が、１００重量部の
主成分に対して２０重量部を超えると、主成分がコージ
ェライトリッチ系では、焼結温度が高くなり、Ｂ2 Ｏ3
−ＳｉＯ2 リッチ系では、機械的強度が低くなり、いず
れの場合も、比抵抗が小さくなり、誘電率が高くなる。If TiO 2 as an additive exceeds 20 parts by weight with respect to 100 parts by weight of the main component, if the main component is cordierite-rich, the sintering temperature will increase, and B 2 O 3
In -SiO 2 rich systems, the mechanical strength is lowered, in any case, the specific resistance is reduced, the dielectric constant is high.
【図１】コージェライトの組成比を示す組成図である。FIG. 1 is a composition diagram showing a composition ratio of cordierite.
【図２】この発明の組成物の主成分組成比を示す主成分
組成図である。FIG. 2 is a main component composition diagram showing the main component composition ratio of the composition of the present invention.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−64059（ＪＰ，Ａ) 特開 昭63−182887（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 35/195 H05K 1/03,3/46 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-64059 (JP, A) JP-A-63-182887 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C04B 35/195 H05K 1 / 03,3 / 46
Claims (1)
０重量％からなる主成分１００重量部に、 副成分としてＴｉＯ2 を１５〜２０重量部添加した、多
層基板用低温焼結磁器組成物。1. A cordierite of 40 to 85% by weight, a B 2 O 3 of 10 to 40% by weight, and a SiO 2 of 5 to 5% by weight.
A low-temperature sintered porcelain composition for a multilayer substrate, comprising 15 to 20 parts by weight of TiO 2 as a sub-component added to 100 parts by weight of a main component consisting of 0% by weight .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03349048A JP3134437B2 (en) | 1991-12-05 | 1991-12-05 | Low-temperature sintered ceramic composition for multilayer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03349048A JP3134437B2 (en) | 1991-12-05 | 1991-12-05 | Low-temperature sintered ceramic composition for multilayer substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05155656A JPH05155656A (en) | 1993-06-22 |
| JP3134437B2 true JP3134437B2 (en) | 2001-02-13 |
Family
ID=18401141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03349048A Expired - Fee Related JP3134437B2 (en) | 1991-12-05 | 1991-12-05 | Low-temperature sintered ceramic composition for multilayer substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3134437B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3900986B2 (en) * | 2002-03-27 | 2007-04-04 | 株式会社日立製作所 | How to convert an existing pump to a pump turbine |
-
1991
- 1991-12-05 JP JP03349048A patent/JP3134437B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05155656A (en) | 1993-06-22 |
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