JP3131814B2 - LCD panel manufacturing method - Google Patents

LCD panel manufacturing method

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Publication number
JP3131814B2
JP3131814B2 JP11840293A JP11840293A JP3131814B2 JP 3131814 B2 JP3131814 B2 JP 3131814B2 JP 11840293 A JP11840293 A JP 11840293A JP 11840293 A JP11840293 A JP 11840293A JP 3131814 B2 JP3131814 B2 JP 3131814B2
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JP
Japan
Prior art keywords
liquid crystal
polymer film
film
solution
crystal panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11840293A
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Japanese (ja)
Other versions
JPH06331991A (en
Inventor
尚英 脇田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP11840293A priority Critical patent/JP3131814B2/en
Publication of JPH06331991A publication Critical patent/JPH06331991A/en
Application granted granted Critical
Publication of JP3131814B2 publication Critical patent/JP3131814B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、表示素子やシャッター
に用いる液晶パネルの製造法に関する。
The present invention relates to a process for producing a liquid crystal panel used for a display element or shutter.

【0002】[0002]

【従来の技術】図1は通常の液晶パネルの構成を示す断
面図であり、これはガラス基板1,2上に酸化インジウ
ム錫からなる透明電極3,4をスパッタ法や蒸着法によ
り成膜し、その上にポリイミドの前駆体溶液を印刷し、
摂氏200〜300度で焼成してポリイミド配向膜5を形成す
る。ポリイミド配向膜5と透明電極3,4の間に二酸化
珪素を主成分とする絶縁膜を設ける場合も多い。
2. Description of the Related Art FIG. 1 is a cross-sectional view showing the structure of a conventional liquid crystal panel. Transparent electrodes 3 and 4 made of indium tin oxide are formed on glass substrates 1 and 2 by sputtering or vapor deposition. , On which a polyimide precursor solution is printed,
The polyimide alignment film 5 is formed by firing at 200 to 300 degrees Celsius. In many cases, an insulating film containing silicon dioxide as a main component is provided between the polyimide alignment film 5 and the transparent electrodes 3 and 4.

【0003】そして、ポリイミド配向膜5をレーヨン等
の布で擦るラビング処理を施してから、2枚のガラス基
板1,2を貼り合わせ、その間に液晶6を注入する。ポ
リイミド配向膜5はラビングにより延伸され、液晶分子
はラビング方向に配向する。
Then, a rubbing process of rubbing the polyimide alignment film 5 with a cloth such as rayon is performed, and then the two glass substrates 1 and 2 are bonded to each other, and a liquid crystal 6 is injected between them. The polyimide alignment film 5 is stretched by rubbing, and the liquid crystal molecules are aligned in the rubbing direction.

【0004】一方、通常、ガラスが用いられる液晶パネ
ルの基板をプラスチックフィルムとすることにより薄型
化が図られている(例えば、特開昭56−155920号公報,
特開昭64−33524号公報)。ポリエーテルサルフォン,ポ
リカーボネート,ポリエチレンテレフタレート等の透明
なプラスチック樹脂フィルム上に酸化インジウム錫等の
透明電極を設け、その上に配向膜を塗布し、ラビング処
理を施すことにより液晶を配向させることができる。
[0004] On the other hand, a liquid crystal panel using glass is usually made thin by using a plastic film as a substrate (for example, Japanese Patent Application Laid-Open No. 56-155920,
JP-A-64-33524). A transparent electrode such as indium tin oxide is provided on a transparent plastic resin film such as polyethersulfone, polycarbonate, polyethylene terephthalate and the like, and an alignment film is coated thereon and subjected to a rubbing treatment to align the liquid crystal. .

【0005】また、パネル中の液晶材料としては、TN
液晶で広く用いられているネマチック液晶と、高速でメ
モリー性のある強誘電性液晶等があるが、基本的なパネ
ル構成や製造法は同じである。
The liquid crystal material in the panel is TN
There are a nematic liquid crystal, which is widely used as a liquid crystal, and a ferroelectric liquid crystal having a high-speed and memory property.

【0006】[0006]

【発明が解決しようとする課題】ところで、上記ポリイ
ミドに代表される有機高分子の配向膜は、抵抗値が極め
て高く、誘電率も小さいので容量によるインピーダンス
も大きい。このため、印加電圧が配向膜の存在により減
衰して伝わり、閾値電圧の上昇や表示むらを誘発する。
The orientation film of an organic polymer represented by polyimide has an extremely high resistance value and a small dielectric constant, and therefore has a large impedance due to capacitance. For this reason, the applied voltage is attenuated and transmitted by the presence of the alignment film, which causes an increase in threshold voltage and display unevenness.

【0007】特に、液晶が強誘電性液晶の場合には、液
晶分子がスイッチングするときに自発分極の向きが反転
し、反転電流が流れなければならない。実効値応答する
ネマチック液晶と異なり、スイッチングは数十マイクロ
秒のパルスで完了しなければならないので、配向膜の抵
抗値が高いと反転電流が電極から供給されず、メモリー
状態が切り換わらず、表示ができない。
In particular, when the liquid crystal is a ferroelectric liquid crystal, the direction of spontaneous polarization is inverted when the liquid crystal molecules are switched, and an inversion current must flow. Unlike a nematic liquid crystal that responds to an effective value, switching must be completed with a pulse of several tens of microseconds.If the resistance of the alignment film is high, the reversal current is not supplied from the electrode, the memory state does not switch, and the display does not occur. Can not.

【0008】また、液晶パネルの部材のうち、透明電極
3,4は真空中の成膜が必要なためコストが高いという
課題がある。さらに、液晶パネルはパネル間の距離が数
ミクロンのため無塵室で製造されるが、ラビング処理は
布で擦るという、ほこりの出る工程であり、歩留まりを
下げる要因となっている。
Further, among the members of the liquid crystal panel, the transparent electrodes 3 and 4 need to be formed in a vacuum, so that the cost is high. Further, the liquid crystal panel is manufactured in a dust-free room because the distance between the panels is several microns, but the rubbing process is a process of rubbing with a cloth, which is a dusty process, and causes a reduction in yield.

【0009】本発明は上記のような従来の問題点を解決
し、配向膜の抵抗値を下げ、液晶パネルの特性向上を図
ることを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve the conventional problems as described above, reduce the resistance value of an alignment film, and improve the characteristics of a liquid crystal panel.

【0010】[0010]

【課題を解決するための手段】本発明は上記の課題を解
決し、目的を達成するため、高分子前駆体の溶液に塩化
亜鉛あるいは塩化第1錫を含む金属塩を溶かし、前記溶
液を平板上に塗布してから焼成して高分子膜を形成し、
前記高分子膜表面上に液晶を配向させて、膜抵抗を下げ
ている。さらに、ポリイミドの前駆体とコロイド状の金
属酸化物を溶かした溶液を透明電極上に塗布した膜を焼
成して配向膜とし、ラビングして液晶を配向させたこと
を特徴とする。
The present invention SUMMARY OF THE INVENTION solves the above problems and achieve an object, chloride in a solution of polymer precursor
Dissolving a metal salt containing zinc or stannous chloride , applying the solution on a flat plate, and then baking to form a polymer film;
The liquid crystal is aligned on the surface of the polymer film to reduce the film resistance. Further, a film obtained by applying a solution in which a polyimide precursor and a colloidal metal oxide are dissolved on a transparent electrode is baked to form an alignment film, and rubbing is performed to align the liquid crystal.

【0011】また、高分子前駆体の溶液に金属塩を溶か
し、前記溶液を平板上に塗布してから焼成して高分子膜
を形成した後、前記高分子膜を平板から延伸しながら剥
がした高分子膜を基板とし、2枚の前記高分子膜の平板
から剥がした面の間に液晶を挟んで配向させることによ
り、低コスト化が図れる。
Further, a metal salt is dissolved in a solution of a polymer precursor, the solution is applied on a flat plate, and then baked to form a polymer film. Then, the polymer film is peeled off while being stretched from the flat plate. By using a polymer film as a substrate and aligning the liquid crystal between the surfaces of the two polymer films separated from the flat plate, cost reduction can be achieved.

【0012】[0012]

【作用】本発明によれば、ポリイミドの膜抵抗は1015Ω
・cm前後と極めて高いが、金属酸化物の抵抗値は1010Ω
・cm程度の半導体的なものが多く、あるいは酸化錫や酸
化亜鉛のように金属に近い良導体のものもある。金属塩
化物や金属硝酸塩は水分の存在下で加熱すると、金属酸
化物になるものがある。
According to the present invention, the film resistance of polyimide is 10 15 Ω.
・ It is extremely high, around cm, but the resistance value of the metal oxide is 10 10 Ω
・ There are many semiconductor-like materials with a size of about cm, and there are also those with good conductors close to metals such as tin oxide and zinc oxide. Some metal chlorides and metal nitrates become metal oxides when heated in the presence of moisture.

【0013】また、これらの塩は有機溶媒に溶けるもの
が多く、例えば、塩化第1錫をポリイミドの前駆体のN
−メチル−ピロリドン(NMP)溶液に溶かし高温で焼成
すれば、ポリイミド中に酸化錫が分布した膜ができる。
ただし、分布が偏って、ポリイミドの層と分かれてしま
うと抵抗値は下がらないばかりでなく、表面にポリイミ
ドが分布していないと配向が悪くなる。なるべく、均一
にポリイミド中に金属酸化物の微粒子が分散しているこ
とが望ましい。
Many of these salts are soluble in organic solvents. For example, stannous chloride is converted to N
Dissolving in -methyl-pyrrolidone (NMP) solution and firing at a high temperature results in a film in which tin oxide is distributed in polyimide.
However, when the distribution is biased and the polyimide layer is separated from the polyimide layer, not only does the resistance value not decrease, but also when the polyimide is not distributed on the surface, the orientation becomes poor. It is desirable that the metal oxide fine particles are dispersed in the polyimide as uniformly as possible.

【0014】金属塩を酸化する以外に、超微粒子のコロ
イド状の金属酸化物または金属水酸化物の溶液をポリイ
ミド前駆体溶液に混ぜて、高温焼成すると均一に金属酸
化物が均一に分散した高分子膜ができる。
In addition to oxidizing the metal salt, a solution of ultrafine colloidal metal oxide or metal hydroxide is mixed with the polyimide precursor solution and fired at a high temperature to obtain a highly dispersed metal oxide. A molecular film is formed.

【0015】[0015]

【実施例】【Example】

(実施例1)図1の構成の液晶パネルで、ポリイミドとし
て日立化成(株)製のF−100の5重量%NMP溶液に、
以下の金属塩を5重量%溶かし、酸化インジウム錫の透
明電極上にスピンナーで塗布し、遠赤外線ホットプレー
トで摂氏250度で10分焼成した。そして、焼成が終わっ
た膜の抵抗値(膜厚方向)を、膜上に乗せたコロナ放電電
荷の減衰時間を見る方法により測定した。
Example 1 A liquid crystal panel having the structure shown in FIG. 1 was used as a polyimide in a 5% by weight NMP solution of F-100 manufactured by Hitachi Chemical Co., Ltd.
The following metal salts were dissolved in 5% by weight, applied on a transparent electrode of indium tin oxide with a spinner, and baked on a far-infrared hot plate at 250 degrees Celsius for 10 minutes. Then, the resistance value (thickness direction) of the fired film was measured by a method of observing the decay time of the corona discharge charge placed on the film.

【0016】(表1)が各種金属塩化物(SnCl2,InCl
3,ZnCl2)を溶かした場合の抵抗値であって、塩化イ
ンジウム以外の3種の金属塩でポリイミド単独の場合よ
り抵抗値が下がった。それぞれの膜をオージェ電子分光
分析で組成分析したところ、塩化インジウムはほとんど
昇華して残っておらず、錫は金属が最も多く配向膜中に
分散しており、亜鉛は量的にやや少なく、かつ亜鉛は膜
表面側に多く分布していた。また、塩化錫添加膜では塩
素は殆ど残っていないが、塩化亜鉛添加では多量の塩素
が残っていた。
Table 1 shows various metal chlorides (SnCl 2 , InCl).
3 , ZnCl 2 ) was dissolved, and the resistance was lower than that of polyimide alone with three metal salts other than indium chloride. When the composition of each film was analyzed by Auger electron spectroscopy, indium chloride was hardly sublimed and remained, tin had the largest amount of metal dispersed in the orientation film, zinc was slightly less in quantity, and Zinc was largely distributed on the film surface side. In addition, almost no chlorine remained in the tin chloride added film, but a large amount of chlorine remained in the zinc chloride added film.

【0017】これらの配向膜を平行方向にラビングして
セルを組立て、ピリミジン系の強誘電性を挟んで、その
配向とメモリー状態のスイッチング特性を観察した結果
を (表1)に示す。添加物の残っていない膜ではユニフ
ォーム配向を示すが、全くスイッチングしない。(表1)
の△印で示すように、塩化亜鉛では配向はやや乱れてい
るが、部分的にスイッチングした。また(表1)の○印で
示すように、塩化錫では配向,スイッチングとも良好で
あった。
Table 1 shows the results of observing the orientation and the switching characteristics of the memory state of the cell by assembling the cell by rubbing these alignment films in the parallel direction and sandwiching the pyrimidine ferroelectricity. The film without the additive shows uniform orientation, but does not switch at all. (Table 1)
As shown by the symbol △, the orientation was slightly disordered in zinc chloride, but partial switching was performed. As shown by the circles in Table 1, the orientation and switching were good for tin chloride.

【0018】組成分析の結果から、塩化亜鉛での配向乱
れは、膜中の塩素の溶け出しが問題と思われたので、膜
を焼成前または後に摂氏60度の温純水で洗浄し、摂氏15
0度で1時間乾燥した。膜抵抗は2×1012Ω・cmに上昇
したが、配向乱れはなくなった。
From the results of the composition analysis, it was considered that the disorder of the orientation in zinc chloride was caused by the dissolution of chlorine in the film. Therefore, the film was washed with hot pure water at 60 degrees Celsius before or after calcination,
Dried for 1 hour at 0 degrees. The film resistance increased to 2 × 10 12 Ω · cm, but the alignment disorder disappeared.

【0019】[0019]

【表1】 [Table 1]

【0020】(実施例2)ポリイミド溶液F−100の6重
量%NMP溶液に、触媒化成(株)製のコロイド状超微粒
子金属酸化物RTZ−6(酸化チタン,酸化珪素含有)を
NMP溶媒に溶媒置換した6%溶液を混合し、実施例1
と同様に透明電極上にスピンコートして摂氏270度で焼
成し、抵抗値測定をし、セルを組んで強誘電性液晶およ
びネマチック液晶を注入した。高分子膜の厚み方向の抵
抗値は、2×1013Ω・cmとポリイミド単体のときより下
がり、強誘電性液晶もネマチック液晶も配向の均一性は
ポリイミド単体のときと遜色なく、プレチルトもやや下
がる程度であった。強誘電性液晶では、スイッチングが
可能となり高いコントラストが得られた。なお、高分子
膜の厚み方向の抵抗値は、1014Ω・cm以下でも上記と同
様な性能が得られた。
(Example 2) In a 6% by weight NMP solution of polyimide solution F-100, a colloidal ultrafine metal oxide RTZ-6 (containing titanium oxide and silicon oxide) manufactured by Catalyst Chemicals Co., Ltd. was used as an NMP solvent. Example 1 was prepared by mixing the solvent-exchanged 6% solutions.
In the same manner as in the above, spin coating was performed on the transparent electrode and baked at 270 ° C., the resistance was measured, and a cell was assembled to inject a ferroelectric liquid crystal and a nematic liquid crystal. The resistance value of the polymer film in the thickness direction is 2 × 10 13 Ωcm, which is lower than that of polyimide alone. It was about to fall. In the ferroelectric liquid crystal, switching was enabled and high contrast was obtained. The same performance as above was obtained even when the resistance value in the thickness direction of the polymer film was 10 14 Ω · cm or less.

【0021】RTZ−6以外にもキレート状態のチタン
水酸化物をポリイミドに加えても同様の効果があった。
Similar effects were obtained by adding chelated titanium hydroxide to polyimide in addition to RTZ-6.

【0022】(実施例3)ポリイミド溶液F−100の6重
量%NMP溶液にSnCl2を6%混合し、研磨した平板
ガラス上にロールコーターで厚さ50ミクロンに印刷し
た。これを、遠赤外線ホットプレートで摂氏250度で10
分焼成した。このときの膜表面のシート抵抗は50kΩ/
□であった。これを紫外線硬化炉中でオゾンに5分間触
れさせると、シート抵抗は100Ω/□となった。表面の
錫の酸化が進行したためと思われる。このとき、膜厚方
向の抵抗値は5×1012Ω・cmであり、膜厚方向にも金属
原子は分布しているためと考えられる。
Example 3 6% by weight of SnCl 2 was mixed with a 6% by weight NMP solution of a polyimide solution F-100 and printed on a polished flat glass plate to a thickness of 50 μm by a roll coater. This is 10 degrees at 250 degrees Celsius with far infrared hot plate.
Calcined for minutes. At this time, the sheet resistance of the film surface is 50 kΩ /
It was □. When this was exposed to ozone for 5 minutes in an ultraviolet curing furnace, the sheet resistance was 100Ω / □. This is probably due to the progress of oxidation of tin on the surface. At this time, the resistance value in the film thickness direction was 5 × 10 12 Ω · cm, and it is considered that metal atoms were distributed also in the film thickness direction.

【0023】この高分子膜を基板から斜め45度方向へ引
っ張りながら平板から剥がし、延伸方向を直交させて2
枚の膜の剥離面にネマチック液晶を挟むと、90度捻れた
TN配向が実現できた。ねじれの向きが1方向に揃って
いることから、プレチルトが生じていることは確かであ
り、ラビングなしで配向させることができた。
The polymer film was peeled off from the flat plate while being pulled obliquely at an angle of 45 degrees from the substrate.
When the nematic liquid crystal was sandwiched between the peeled surfaces of the films, a TN orientation twisted by 90 degrees could be realized. Since the direction of twist was aligned in one direction, it was certain that pretilt had occurred, and the orientation could be achieved without rubbing.

【0024】また、このセルを直交偏光板に挟んで、2
枚の膜の表面から電圧をかけると液晶分子のスイッチン
グが起こった。この結果、スパッター法等による酸化イ
ンジウム錫の形成プロセスを省いても、ポリイミドの焼
成だけで電極が形成できた。
Further, this cell is sandwiched between orthogonal polarizing plates,
When a voltage was applied from the surface of one film, switching of liquid crystal molecules occurred. As a result, even if the process of forming indium tin oxide by a sputtering method or the like was omitted, an electrode could be formed only by firing polyimide.

【0025】高分子膜は必ずしもポリイミドでなくと
も、ポリエチレンテレフタレート等の高分子でも液晶は
配向する。
The liquid crystal aligns even if the polymer film is not necessarily a polyimide but a polymer such as polyethylene terephthalate.

【0026】[0026]

【発明の効果】以上説明したように、本発明の液晶パネ
ルの製造法は、高分子前駆体の溶液に塩化亜鉛あるいは
塩化第1錫を含む金属塩を溶かし、前記溶液を平板上に
塗布してから焼成して高分子膜を形成することにより、
膜の抵抗値を下げることができ、液晶パネルの特性を向
上できる。また、平板にキャストした前記膜を延伸しな
がら剥がすことにより、ラビングなしに液晶を配向させ
ることができ、低コスト化を図ることができる
As described above, the liquid crystal panel according to the present invention is used.
The method of manufacturing the polymer is to add zinc chloride or
Dissolve the metal salt containing stannous chloride and place the solution on a plate
By applying and firing to form a polymer film ,
The resistance of the film can be reduced, and the characteristics of the liquid crystal panel can be improved. Further, by peeling the film cast on a flat plate while stretching it, the liquid crystal can be aligned without rubbing , and the cost can be reduced .

【図面の簡単な説明】[Brief description of the drawings]

【図1】強誘電性液晶パネルの構成を示す断面図であ
る。
FIG. 1 is a sectional view showing a configuration of a ferroelectric liquid crystal panel.

【符号の説明】[Explanation of symbols]

1,2…ガラス基板、 3,4透明電極、 5…ポリイ
ミド配向膜、 6…液晶。
1, 2, glass substrate, 3, 4 transparent electrode, 5 polyimide alignment film, 6 liquid crystal.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−12325(JP,A) 特開 昭57−168225(JP,A) 特開 平4−172320(JP,A) 特開 昭60−66232(JP,A) 特開 昭63−100426(JP,A) 特開 平3−192330(JP,A) 特開 平5−45653(JP,A) (58)調査した分野(Int.Cl.7,DB名) G02F 1/1337 G02F 1/13 101 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-123225 (JP, A) JP-A-57-168225 (JP, A) JP-A-4-172320 (JP, A) JP-A-60-1985 66232 (JP, A) JP-A-63-100426 (JP, A) JP-A-3-192330 (JP, A) JP-A-5-45653 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G02F 1/1337 G02F 1/13 101

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 高分子前駆体の溶液に塩化亜鉛を含む
属塩を溶かし、前記溶液を平板上に塗布してから焼成し
て高分子膜を形成し、前記高分子膜表面上に液晶を配向
させたことを特徴とする液晶パネルの製造法。
1. A polymer film is formed by dissolving a metal salt containing zinc chloride in a solution of a polymer precursor, coating the solution on a flat plate, and baking to form a polymer film. A method for manufacturing a liquid crystal panel, characterized in that liquid crystals are aligned on a surface.
【請求項2】 高分子前駆体の溶液に塩化第1錫を含む
金属塩を溶かし、前記溶液を平板上に塗布してから焼成
して高分子膜を形成し、前記高分子膜表面上に液晶を配
向させたことを特徴とする液晶パネルの製造法。
2. A solution of a polymer precursor containing stannous chloride.
Dissolve the metal salt, apply the solution on a flat plate, and bake
To form a polymer film, and arrange a liquid crystal on the polymer film surface.
Preparation of a liquid crystal panel you characterized in that is countercurrent.
【請求項3】 前記高分子膜を焼成前または後に純水で
洗浄することを特徴とする請求項1または2記載の液晶
パネルの製造法。
3. A method for producing a liquid crystal panel according to claim 1 or 2, wherein the washing with pure water after or before calcination of the polymer film.
【請求項4】 前記平板が透明電極膜を形成した基板で
あり、高分子膜がポリイミドからなり、高分子膜を焼成
後、ラビング処理を施してから強誘電性液晶を配向させ
ることを特徴とする請求項1,2または3記載の液晶パ
ネルの製造法。
4. The method according to claim 1, wherein the flat plate is a substrate on which a transparent electrode film is formed, the polymer film is made of polyimide, and the polymer film is baked, rubbed, and then the ferroelectric liquid crystal is aligned. The method for manufacturing a liquid crystal panel according to claim 1, 2, or 3.
【請求項5】 高分子前駆体の溶液に金属塩を溶かし、
前記溶液を平板上に塗布してから焼成して高分子膜を形
成した後、前記高分子膜を平板から延伸しながら剥がし
た高分子膜を基板とし、2枚の前記高分子膜の平板から
剥がした面の間に液晶を挟んで配向させたことを特徴と
する液晶パネルの製造法。
5. A method for dissolving a metal salt in a solution of a polymer precursor,
After applying the solution on a flat plate and baking to form a polymer film, the polymer film is peeled off while stretching the polymer film from the flat plate, and the polymer film is used as a substrate. A method for manufacturing a liquid crystal panel, characterized in that a liquid crystal is aligned between peeled surfaces.
【請求項6】 前記高分子膜を平板から剥がす前にオゾ
ン雰囲気にさらすことを特徴とする請求項5記載の液晶
パネルの製造法。
6. The method for manufacturing a liquid crystal panel according to claim 5, wherein the polymer film is exposed to an ozone atmosphere before being peeled from the flat plate.
JP11840293A 1993-05-20 1993-05-20 LCD panel manufacturing method Expired - Fee Related JP3131814B2 (en)

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Application Number Priority Date Filing Date Title
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JPH06331991A JPH06331991A (en) 1994-12-02
JP3131814B2 true JP3131814B2 (en) 2001-02-05

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933843B4 (en) * 1999-07-20 2005-02-17 Robert Bosch Gmbh A layer containing electrically conductive, transparent material, a method of making such a layer and their use
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