JP3127562B2 - III-V compound semiconductor thin film selective growth forming method using mask for selective growth of III-V compound semiconductor thin film - Google Patents
III-V compound semiconductor thin film selective growth forming method using mask for selective growth of III-V compound semiconductor thin filmInfo
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- JP3127562B2 JP3127562B2 JP04097087A JP9708792A JP3127562B2 JP 3127562 B2 JP3127562 B2 JP 3127562B2 JP 04097087 A JP04097087 A JP 04097087A JP 9708792 A JP9708792 A JP 9708792A JP 3127562 B2 JP3127562 B2 JP 3127562B2
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- thin film
- compound semiconductor
- semiconductor thin
- iii
- mask
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板上に、第１
及び第２のＩＩＩ−Ｖ族化合物半導体薄膜を、第１及び
第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マ
スクを用いて、選択成長させて形成させるＩＩＩ−Ｖ族
化合物半導体薄膜選択成長形成法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention
Selective growth of a group III-V compound semiconductor thin film using a first and second group III-V compound semiconductor thin film selective growth forming mask It relates to the forming method.
【０００２】[0002]
【従来の技術】従来、半導体基板上に、第１及び第２の
ＩＩＩ−Ｖ族化合物半導体薄膜を、第１及び第２のＩＩ
Ｉ−Ｖ族化合物半導体薄膜選択成長形成用マスクを用い
て、選択成長させて形成させるＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法が、半導体装置、光半導体装置な
どを製造するのに適用されている。2. Description of the Related Art Conventionally, first and second III-V compound semiconductor thin films are formed on a semiconductor substrate by first and second II-V compound semiconductor thin films.
A group III-V compound semiconductor thin film selective growth forming method, which is selectively grown by using a group IV compound semiconductor thin film selective growth forming mask, is applied to manufacture semiconductor devices, optical semiconductor devices, and the like. I have.
【０００３】ところで、従来は、半導体基板上に、第１
及び第２のＩＩＩ−Ｖ族化合物半導体薄膜を、第１及び
第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マ
スクを用いて、選択成長させて形成させるにつき、第１
及び第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
用マスクとして、シリコン酸化膜、シリコン窒化膜など
の誘電体薄膜を用いることが実行されている。[0003] Conventionally, a first substrate is provided on a semiconductor substrate.
And the second group III-V compound semiconductor thin film is selectively grown by using the first and second group III-V compound semiconductor thin film forming masks.
In addition, a dielectric thin film such as a silicon oxide film or a silicon nitride film is used as a mask for selectively growing a second III-V compound semiconductor thin film.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、第１及
び第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクがシリコン酸化膜、シリコン窒化膜などの誘電体
薄膜でなる場合、それら誘電体薄膜でなる第１及び第２
のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスク
の半導体基板への付着力が、材質上、比較的弱いことか
ら、誘電体薄膜でなる第１及び第２のＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスクを、所要のパタ―ン
に切れ良くパタ―ニングして形成することが困難であ
り、このため、第１及び第２のＩＩＩ−Ｖ族化合物半導
体薄膜を、所要のパタ―ンに、側面荒れを有しないもの
として、パタ―ニングして形成することが困難である、
という欠点を有していた。However, when the first and second masks for selectively growing a group III-V compound semiconductor thin film are made of a dielectric thin film such as a silicon oxide film, a silicon nitride film, etc. First and second
Since the adhesive force of the mask for selective growth of the group III-V compound semiconductor thin film on the semiconductor substrate is relatively weak in material, the first and second group III-V compound semiconductor thin films formed of dielectric thin films are selected. It is difficult to form a mask for growth formation in a required pattern with a sharp pattern, so that the first and second group III-V compound semiconductor thin films can be formed in a required pattern. In addition, it is difficult to form by patterning without having side roughness.
Had the disadvantage that
【０００５】また、半導体基板上に、第１及び第２のＩ
ＩＩ−Ｖ族化合物半導体薄膜を、誘電体薄膜でなる第１
及び第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
用マスクをそれぞれ用いて選択成長させて形成させる場
合、それら誘電体薄膜でなるＩＩＩ−Ｖ族化合物半導体
薄膜選択成長形成用マスクが互に種類の異なる誘電体薄
膜でなるとしても、すなわち、第１のＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスクが例えばシリコン酸
化膜でなり、第２のＩＩＩ−Ｖ族化合物半導体薄膜選択
成長形成用マスクが例えばシリコン窒化膜でなるとして
も、そのシリコン窒化膜でなるＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクと、シリコン窒化膜でなる
ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスクと
の間に、エッチングに対する高い選択性を有していない
ことから、まず、半導体基板上に、誘電体薄膜でなる第
１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マス
クを形成し、次に、その第１のＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクを用いて、半導体基板上に
第１のＩＩＩ−Ｖ族化合物半導体薄膜を選択成長させて
形成し、次に、第１のＩＩＩ−Ｖ族化合物半導体薄膜選
択成長形成用マスクを半導体基板上から除去し、次に、
半導体基板上に、第１の誘電体薄膜と同じまたは異なる
種類の第２の誘電体薄膜でなる第２のＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスクを第２のＩＩＩ−Ｖ
族化合物半導体薄膜選択成長形成用マスクとして形成
し、次に、その第２のＩＩＩ−Ｖ族化合物半導体薄膜選
択成長形成用マスクを用いて、半導体基板上に第２のＩ
ＩＩ−Ｖ族化合物半導体薄膜を選択成長させて形成する
のを予儀なくされていた。Further, the first and second I / Os are provided on a semiconductor substrate.
A II-V compound semiconductor thin film is formed of a first dielectric film.
When the selective growth is performed using the mask for selective growth of the group III-V compound semiconductor thin film and the second mask for selective growth of the group III-V compound semiconductor, respectively, the mask for selective growth of the group III-V compound semiconductor thin film made of the dielectric thin film is mutually different. In other words, the first III-V compound semiconductor thin film selective growth forming mask is, for example, a silicon oxide film, and the second III-V compound semiconductor thin film selective growth forming mask For example, even if the mask is made of a silicon nitride film, the mask between the III-V compound semiconductor thin film selective growth formation mask made of the silicon nitride film and the III-V compound semiconductor thin film selective growth formation mask made of the silicon nitride film First, since it does not have high selectivity to etching, first, a first III-V group formed of a dielectric thin film is formed on a semiconductor substrate. Forming a compound semiconductor thin film selective growth formation mask, and then using the first III-V compound semiconductor thin film selective growth formation mask, forming a first III-V compound semiconductor thin film on a semiconductor substrate; Is formed by selective growth, and then the first group III-V compound semiconductor thin film selective growth forming mask is removed from the semiconductor substrate.
A second III-V compound semiconductor thin film selective growth forming mask made of a second dielectric thin film of the same or different type from the first dielectric thin film is formed on a semiconductor substrate.
A second group III-V compound semiconductor thin film selective growth forming mask is formed as a second group I-V compound semiconductor thin film selective growth forming mask.
It has been expected that a group II-V compound semiconductor thin film is selectively grown and formed.
【０００６】このため、すなわち、第１及び第２のＩＩ
Ｉ−Ｖ族化合物半導体薄膜選択成長形成用マスクを形成
する工程を、第１のＩＩＩ−Ｖ族化合物半導体薄膜を形
成する工程の前と後とでそれぞれ有せしめるのを予儀な
くされていたため、半導体基板上に、第１及び第２のＩ
ＩＩ−Ｖ族化合物半導体薄膜を、第１及び第２のＩＩＩ
−Ｖ族化合物半導体薄膜選択成長形成用マスクを用い
て、選択成長させて形成させるにつき、工程が複雑にな
る、などの欠点を有していた。For this reason, the first and second II
Since it has been necessary to provide a step of forming a mask for selectively growing a group IV-V compound semiconductor thin film before and after the step of forming a first group III-V compound semiconductor thin film, On a semiconductor substrate, first and second I
Group II-V compound semiconductor thin films are formed by first and second III
The method has a drawback that the process is complicated when selectively grown by using a mask for selectively growing a group V compound semiconductor thin film.
【０００７】よって、本発明は上述した欠点を有効に回
避し得る、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
用マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成
長形成法を提案せんとするものである。Accordingly, the present invention proposes a method for selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group III-V compound semiconductor thin film, which can effectively avoid the above-mentioned disadvantages. It is.
【０００８】[0008]
【課題を解決するための手段】本発明による、ＩＩＩ−
Ｖ族化合物半導体薄膜選択成長形成用マスクを用いたＩ
ＩＩ−Ｖ族化合物半導体薄膜選択成長形成法は、半導体
基板上に、第１及び第２のＩＩＩ−Ｖ族化合物半導体薄
膜を、第１及び第２のＩＩＩ−Ｖ族化合物半導体薄膜選
択成長形成用マスクを用いて、選択成長させて形成させ
るにつき、上記半導体基板上に、表面に自然酸化膜が形
成されているＡｌを含むＩＩＩ−Ｖ族化合物半導体薄膜
でなるマスクを、上記第１のＩＩＩ−Ｖ族化合物半導体
薄膜選択成長形成用マスクとして形成し、次に、上記半
導体基板上に、上記第１のＩＩＩ−Ｖ族化合物半導体薄
膜選択成長形成用マスクを覆って延長している誘電体薄
膜でなるマスクを、上記第２のＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクとして形成し、次に、上記
半導体基板上に、上記第１のＩＩＩ−Ｖ族化合物半導体
薄膜を、上記第１及び第２のＩＩＩ−Ｖ族化合物半導体
薄膜選択成長形成用マスクを用いて選択成長させて形成
させ、次に、上記第２のＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを除去し、次に、上記半導体基板
上に、上記第２のＩＩＩ−Ｖ族化合物半導体薄膜を、上
記第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いて選択成長させて形成させる。According to the present invention, III-
I using mask for selective growth formation of group V compound semiconductor thin film
The method for selectively growing a group II-V compound semiconductor thin film is a method for selectively growing a first and second group III-V compound semiconductor thin film on a semiconductor substrate. In order to form the semiconductor substrate by selective growth using a mask, a mask made of a III-V compound semiconductor thin film containing Al having a natural oxide film formed on the surface thereof is formed on the semiconductor substrate by the first III- A mask for selective growth formation of a group V compound semiconductor thin film is formed on the semiconductor substrate, and then a dielectric thin film extending over the first mask for selective growth of a group III-V compound semiconductor thin film is formed on the semiconductor substrate. Is formed as a mask for selectively growing the second III-V compound semiconductor thin film, and then the first III-V compound semiconductor thin film is formed on the semiconductor substrate by the first III-V compound semiconductor thin film. And selective growth using a second III-V compound semiconductor thin film selective growth forming mask, and then removing the second III-V compound semiconductor thin film selective growth forming mask. Then, the second III-V compound semiconductor thin film is formed on the semiconductor substrate by selective growth using the first III-V compound semiconductor thin film selective growth forming mask.
【０００９】[0009]
【作用・効果】本発明による、ＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成法によれば、半導体基板上
に、第１及び第２のＩＩＩ−Ｖ族化合物半導体薄膜を、
第１及び第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成用マスクを用いて、選択成長させて形成させるにつ
き、第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
用マスクが、表面に自然酸化膜が形成されているＡｌを
含むＩＩＩ−Ｖ族化合物半導体薄膜でなるので、その第
１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マス
クの半導体基板への付着力が、材質上、格段的に強いこ
とから、第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成用マスクを、所要のパタ―ンに、切れ良くパタ―ニ
ングして形成することができ、このため、第１及び第２
のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスク
を用いて形成される第１のＩＩＩ−Ｖ族化合物半導体薄
膜及び第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形
成用マスクを用いて形成される第２のＩＩＩ−Ｖ族化合
物半導体薄膜を、所要のパタ―ンに、側面荒れのほとん
ど有しないものとして、パタ―ニングして容易に形成す
ることができる。According to the method for selectively growing a group III-V compound semiconductor thin film using the mask for selectively growing a group III-V compound semiconductor thin film according to the present invention, the first and the second layers are formed on the semiconductor substrate. III-V compound semiconductor thin film,
When the first and second III-V compound semiconductor thin films are selectively grown using the first and second III-V compound semiconductor thin film formation masks, the first III-V compound semiconductor thin film selective growth formation masks are naturally formed on the surface. Since the thin film is made of an Al-containing III-V compound semiconductor thin film on which an oxide film is formed, the adhesive force of the first III-V compound semiconductor thin film selective growth forming mask to the semiconductor substrate is extremely low in material. Therefore, the first group III-V compound semiconductor thin film selective growth forming mask can be formed in a required pattern by sharply patterning. 2
The first III-V compound semiconductor thin film formed using the mask for selective growth formation of a III-V compound semiconductor thin film and the first III-V compound semiconductor thin film formed using the mask for selective growth formation The second group III-V compound semiconductor thin film can be easily formed by patterning in a required pattern with almost no side roughness.
【００１０】また、第１及び第２のＩＩＩ−Ｖ族化合物
半導体薄膜選択成長形成用マスクを、ともに、第１及び
第２の多重量子井戸型導波路を形成する前の工程におい
て形成するため、第１の多重量子井戸型導波路を形成す
る工程後、第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成
長形成用マスクを除去する工程を有するとしても、第１
及び第２のＩＩＩ−Ｖ族化合物半導体薄膜を、第１及び
第２のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マ
スクを用いて、選択成長させて形成させるにつき、工程
が簡易である。In addition, the first and second masks for selectively growing a group III-V compound semiconductor thin film are formed in a step before forming the first and second multiple quantum well waveguides. After the step of forming the first multiple quantum well type waveguide, the method further comprises the step of removing the second III-V compound semiconductor thin film selective growth forming mask.
The process is simple because the second and third III-V compound semiconductor thin films are selectively grown by using the first and second III-V compound semiconductor thin film selective growth forming masks.
【００１１】[0011]
【実施例１】次に、図１〜図６を伴って、本発明によ
る、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マス
クを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
法を、多重量子井戸型導波路構体の製法に適用した場合
の実施例で述べよう。Embodiment 1 Next, referring to FIGS. 1 to 6, a method for selectively growing a group III-V compound semiconductor thin film using a mask for forming a group III-V compound semiconductor thin film according to the present invention will be described. An example in which the present invention is applied to a method for manufacturing a quantum well waveguide structure will be described.
【００１２】図１〜図６に示す、本発明による、ＩＩＩ
−Ｖ族化合物半導体薄膜選択成長形成用マスクを用いた
ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成法の適用さ
れた導波路構体の製法は、次に述べる順次の工程をとっ
て、多重量子井戸型導波路構体を製造する。According to the present invention, shown in FIGS.
A method of manufacturing a waveguide structure to which a group III-V compound semiconductor thin film selective growth forming method is applied using a mask for selective growth formation of a group-V compound semiconductor thin film is performed by using a multiple quantum well type A waveguide structure is manufactured.
【００１３】すなわち、予め用意された、ＩｎＰでなる
半導体基板５１上に、半導体基板５１と格子整合したＩ
ｎＡｌＡｓ系膜を、Ａｌを含むＩＩＩ−Ｖ族化合物半導
体薄膜として、それ自体は公知のＭＯＶＰＥ法によって
形成し、次で、それに対する、マスクを用いたそれ自体
は公知のエッチング処理によって、Ａｌを含むＩＩＩ−
Ｖ族化合物半導体薄膜から、ストライプ状パタ―ンの窓
５２を有する、Ａｌを含むＩＩＩ−Ｖ族化合物半導体薄
膜でなるマスク５３を形成する（図１）。That is, an IP lattice-matched with the semiconductor substrate 51 is placed on a semiconductor substrate 51 made of InP prepared in advance.
The nAlAs-based film is formed as a group III-V compound semiconductor thin film containing Al by a well-known MOVPE method, and then contains Al by a well-known etching process using a mask. III-
A mask 53 made of a group III-V compound semiconductor thin film containing Al and having a window 52 of a stripe pattern is formed from the group V compound semiconductor thin film (FIG. 1).
【００１４】この場合、マスク５３は、ＩＩＩ−Ｖ族化
合物半導体薄膜を形成して後、そのＩＩＩ−Ｖ族化合物
半導体薄膜からマスク５３を形成されるまでの間おい
て、ＩＩＩ−Ｖ族化合物半導体薄膜の表面に自然酸化膜
が形成され、また、ＩＩＩ−Ｖ族化合物半導体薄膜から
マスク５３を形成して後、マスク５３の新たな側面に自
然酸化膜が形成されるので、表面に自然酸化膜５４が、
形成され且つストライプ状パタ―ンの窓５２を有するＡ
ｌを含むＩＩＩ−Ｖ族化合物半導体薄膜でなる第１のＩ
ＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスク５５
として形成される。In this case, the mask 53 is formed by forming a group III-V compound semiconductor thin film and then forming a group III-V compound semiconductor thin film until the mask 53 is formed from the group III-V compound semiconductor thin film. Since a native oxide film is formed on the surface of the thin film, and a mask 53 is formed from the III-V compound semiconductor thin film, a native oxide film is formed on a new side surface of the mask 53. 54 is
A having a window 52 formed and having a stripe pattern
I comprising a III-V compound semiconductor thin film containing
Mask 55 for selectively growing II-V compound semiconductor thin film
Is formed as
【００１５】次に、半導体基板１上に、Ａｌを含むＩＩ
Ｉ−Ｖ族化合物半導体薄膜でなる第１のＩＩＩ−Ｖ族化
合物半導体薄膜選択成長形成用マスク５５を覆って延長
している例えばシリコン酸化膜による誘電体薄膜を、そ
れ自体は公知の例えばマグネトロンスパッタリング法に
よって形成し、次で、それに対する、マスクを用いたそ
れ自体は公知のエッチング処理によって、誘電体薄膜か
ら、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マス
ク５５を外部に臨ませている第２のＩＩＩ−Ｖ族化合物
半導体薄膜選択成長形成用マスク６１を形成する（図
２）。Next, on the semiconductor substrate 1, II containing Al
A dielectric thin film made of, for example, a silicon oxide film extending over the first group III-V compound semiconductor thin film selective growth forming mask 55 made of an IV compound semiconductor thin film is formed by a known method such as magnetron sputtering. Then, a mask 55 for selectively growing a group III-V compound semiconductor thin film from a dielectric thin film is exposed to the outside by a known etching process using a mask. Then, a mask 61 for selectively growing a group III-V compound semiconductor thin film 2 is formed (FIG. 2).
【００１６】次に、半導体基板５１上に、ＩｎＰでなる
クラッド層としてのＩＩＩ−Ｖ族化合物半導体薄膜７１
と、ＩｎＧａＡｓ系膜及びＩｎＡｌＡｓ膜とが交互順次
に積層されている多重量子井戸構造を有するコア層とし
てのＩＩＩ−Ｖ族化合物半導体薄膜７２と、ＩｎＰでな
るクラッド層としてのＩＩＩ−Ｖ族化合物半導体薄膜７
３とがそれらの順に積層されている構成を有するＩＩＩ
−Ｖ族化合物半導体積層体７４を、それ自体は公知のＭ
ＯＶＰＥ法によって、第１及び第２のＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスク５５及び６１を用い
て選択成長させて、そのＩＩＩ−Ｖ族化合物半導体積層
体７４の、第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成
長形成用マスク５５の窓５２に臨む領域を、第１の多重
量子井戸型導波路７５として、形成する（図３）。Next, a III-V compound semiconductor thin film 71 as a cladding layer made of InP is formed on a semiconductor substrate 51.
And a III-V compound semiconductor thin film 72 as a core layer having a multiple quantum well structure in which an InGaAs-based film and an InAlAs film are alternately stacked, and a III-V compound semiconductor as a cladding layer made of InP. Thin film 7
3 having a configuration in which these are stacked in that order.
-V group compound semiconductor laminate 74 is formed by a known M
The first and second III-V compound semiconductor thin films are selectively grown by the OVPE method using the first and second III-V compound semiconductor thin film formation masks 55 and 61, and the first III-V A region facing the window 52 of the group V compound semiconductor thin film selective growth forming mask 55 is formed as a first multiple quantum well waveguide 75 (FIG. 3).
【００１７】次に、半導体基板５１上から、第２のＩＩ
Ｉ−Ｖ族化合物半導体薄膜選択成長形成用マスク６１
を、弗酸を用いて除去する（図４）。Next, from above the semiconductor substrate 51, a second II
Mask 61 for selective growth of group IV compound semiconductor thin film
Is removed using hydrofluoric acid (FIG. 4).
【００１８】次に、半導体基板１上に、ＩｎＧａＡｓで
なるエッチングストッパ層としてのＩＩＩ−Ｖ族化合物
半導体薄膜８１と、ＩｎＰでなるクラッド層としてのＩ
ＩＩ−Ｖ族化合物半導体薄膜８２と、ＩｎＧａＡｓ系膜
及びＩｎＡｌＡｓ膜とが交互順次に積層されている多重
量子井戸構造を有するコア層としてのＩＩＩ−Ｖ族化合
物半導体薄膜８３と、ＩｎＰでなるクラッド層としての
ＩＩＩ−Ｖ族化合物半導体薄膜８４とがそれらの順に積
層されている構成を有するＩＩＩ−Ｖ族化合物半導体積
層体８５を、それ自体は公知のＭＯＶＰＥ法によって、
第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マ
スク５５を用いて選択成長させて形成する（図５）。Next, on the semiconductor substrate 1, a group III-V compound semiconductor thin film 81 as an etching stopper layer made of InGaAs and an I-type clad layer made of InP are formed.
III-V compound semiconductor thin film 83 as a core layer having a multiple quantum well structure in which an II-V compound semiconductor thin film 82, an InGaAs-based film and an InAlAs film are alternately stacked, and a cladding layer made of InP A group III-V compound semiconductor thin film 84 having a structure in which a group III-V compound semiconductor thin film 84 is laminated in that order is formed by a known MOVPE method.
It is formed by selective growth using a first group III-V compound semiconductor thin film selective growth forming mask 55 (FIG. 5).
【００１９】次に、半導体積層体８５に対する、マスク
を用いたそれ自体は公知のエッチング処理によって、Ｉ
ＩＩ−Ｖ族化合物半導体積層体８５から、一端部がＩＩ
Ｉ−Ｖ族化合物半導体積層体７４の一端部上に局部的に
延長しているＩＩＩ−Ｖ族化合物半導体積層体８６を、
その第１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成
用マスク５５の窓５２上の領域を、第１の多重量子井戸
型導波路７５と連結している第２の多重量子井戸型導波
路８７として形成する（図６）。Next, the semiconductor laminated body 85 is subjected to a known etching process using a mask to form the semiconductor laminate 85.
From the II-V compound semiconductor laminate 85, one end is II
A III-V compound semiconductor stack 86 locally extending on one end of the IV compound semiconductor stack 74,
A second multiple quantum well waveguide 87 that connects the region on the window 52 of the first group III-V compound semiconductor thin film selective growth forming mask 55 to a first multiple quantum well waveguide 75. (FIG. 6).
【００２０】以上が、本発明による、ＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスクを用いたＩＩＩ−Ｖ
族化合物半導体薄膜選択成長形成法の適用された、多重
量子井戸型導波路構体の製法の実施例である。The above is the description of the III-V using the mask for selectively growing a group III-V compound semiconductor thin film according to the present invention.
1 is an embodiment of a method for manufacturing a multiple quantum well waveguide structure to which a method of selectively growing a group III compound semiconductor thin film is applied.
【００２１】このような本発明による、ＩＩＩ−Ｖ族化
合物半導体薄膜選択成長形成用マスクを用いたＩＩＩ−
Ｖ族化合物半導体薄膜選択成長形成法の適用された、導
波路構体の製法の実施例によって製造された多重量子井
戸型導波路構体は、半導体基板１上に第１及び第２の導
波路７５及び８７が連続延長している、それ自体は公知
の導波路構体にみられる構成を有するので、詳細説明は
省略するが、それ自体は公知の導波路構体としての機能
を得ることができる。According to the present invention, a III-V compound semiconductor thin film using a mask for selective growth and formation of a III-V compound semiconductor is formed.
The multiple quantum well waveguide structure manufactured by the embodiment of the manufacturing method of the waveguide structure to which the group V compound semiconductor thin film selective growth forming method is applied includes the first and second waveguides 75 and 75 on the semiconductor substrate 1. 87 has a continuous extension, and has a configuration seen in a known waveguide structure itself. Therefore, detailed description is omitted, but the function itself can be obtained as a known waveguide structure.
【００２２】図１〜図６に示す、本発明による、ＩＩＩ
−Ｖ族化合物半導体薄膜選択成長形成用マスクを用いた
ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成法の適用さ
れた、多重量子井戸型導波路構体の製法によれば、半導
体基板５１上に、第１の多重量子井戸型導波路７５（Ｉ
ＩＩ−Ｖ族化合物半導体積層体７４（ＩＩＩ−Ｖ族化合
物半導体薄膜７１、７２及び７３））、及び第２の多重
量子井戸型導波路８７（ＩＩＩ−Ｖ族化合物半導体積層
体８６（ＩＩＩ−Ｖ族化合物半導体薄膜８１、８２、８
３及び８４））を、表面に自然酸化膜５４が形成されて
いるＡｌを含むＩＩＩ−Ｖ族化合物半導体薄膜でなる第
１のＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マス
ク５５及び誘電体薄膜でなる第２のＩＩＩ−Ｖ族化合物
半導体薄膜選択成長形成用マスク６１、及び表面に自然
酸化膜５４が形成されているＡｌを含むＩＩＩ−Ｖ族化
合物半導体薄膜でなる第１のＩＩＩ−Ｖ族化合物半導体
薄膜選択成長形成用マスク５５をそれぞれ用いて、選択
成長させて形成する、という工程をとって、多重量子井
戸型導波路構体を製造している。According to the present invention, shown in FIGS.
According to the method of manufacturing a multiple quantum well type waveguide structure to which the method of selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group-V compound semiconductor thin film is applied, One multiple quantum well waveguide 75 (I
II-V compound semiconductor laminate 74 (III-V compound semiconductor thin films 71, 72 and 73)) and second multiple quantum well waveguide 87 (III-V compound semiconductor laminate 86 (III-V Group compound semiconductor thin films 81, 82, 8
3 and 84), a first mask 55 for selectively growing a group III-V compound semiconductor thin film made of a group III-V compound semiconductor thin film containing Al and having a natural oxide film 54 formed on the surface thereof, and a dielectric thin film A second III-V compound semiconductor thin film selective growth forming mask 61 composed of: and a first III-V group composed of an Al-containing III-V compound semiconductor thin film having a natural oxide film 54 formed on its surface. The multi-quantum well waveguide structure is manufactured by performing a process of selective growth by using the compound semiconductor thin film selective growth forming masks 55, respectively.
【００２３】そして、この場合、第１のＩＩＩ−Ｖ族化
合物半導体薄膜選択成長形成用マスク５５が表面に自然
酸化膜が形成されているＡｌを含むＩＩＩ−Ｖ族化合物
半導体薄膜でなるので、その第１のＩＩＩ−Ｖ族化合物
半導体薄膜選択成長形成用マスク５５の半導体基板５１
への付着力が、材質上、前述した従来の誘電体薄膜でな
るＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスク
に比し格段的に強いことから、第１のＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成用マスク５５を、所要のパタ
―ンに、前述した従来の誘電体薄膜でなるＩＩＩ−Ｖ族
化合物半導体薄膜選択成長形成用マスクの場合に比し切
れ良くパタ―ニングして形成することができ、このた
め、第１及び第２のＩＩＩ−Ｖ族化合物半導体薄膜選択
成長形成用マスク５５及び６１を用いて形成される第１
の多重量子井戸型導波路７５及び第１のＩＩＩ−Ｖ族化
合物半導体薄膜選択成長形成用マスク５５を用いて形成
される第２の多重量子井戸型導波路７７を、所要のパタ
―ンに、側面荒れのほとんど有しないものとして、パタ
―ニングして容易に形成することができ、よって、多重
量子井戸型導波路構体を、優れた特性を有するものとし
て、容易に製造することができる。In this case, since the first mask 55 for selectively growing a group III-V compound semiconductor thin film is made of a group III-V compound semiconductor thin film containing Al having a natural oxide film formed on the surface thereof, Semiconductor substrate 51 of mask 55 for first III-V compound semiconductor thin film selective growth formation
The first III-V compound semiconductor thin film has a significantly higher adhesive force to the material than the conventional III-V compound semiconductor thin film mask for selective growth formation made of a dielectric thin film. The selective growth forming mask 55 is formed in a required pattern by patterning it more sharply than in the case of the above-mentioned conventional III-V group compound semiconductor thin film selective growth forming mask made of a dielectric thin film. Therefore, the first and second III-V compound semiconductor thin film selective growth forming masks 55 and 61 can be used to form the first and second III-V compound semiconductor thin films.
The second multiple quantum well waveguide 77 formed by using the multiple quantum well waveguide 75 and the first group III-V compound semiconductor thin film selective growth forming mask 55 in a required pattern, It can be easily formed by patterning as having almost no side surface roughness, so that the multiple quantum well waveguide structure can be easily manufactured as having excellent characteristics.
【００２４】また、第１及び第２のＩＩＩ−Ｖ族化合物
半導体薄膜選択成長形成用マスク５５及び６１を、とも
に、第１及び第２の多重量子井戸型導波路７５及び８７
を形成する前の工程において形成するため、第１の多重
量子井戸型導波路７５を形成する工程後、第２のＩＩＩ
−Ｖ族化合物半導体薄膜選択成長形成用マスク６１を除
去する工程を有するとしても、第１及び第２の多重量子
井戸型導波路７５及び８７を、第１及び第２のＩＩＩ−
Ｖ族化合物半導体薄膜選択成長形成用マスクを用いて、
選択成長させて形成させるにつき、工程が簡易である。Also, the first and second III-V compound semiconductor thin film selective growth forming masks 55 and 61 are provided together with the first and second multiple quantum well waveguides 75 and 87, respectively.
After the step of forming the first multiple quantum well waveguide 75, the second III
Even if the method includes the step of removing the group 61 compound semiconductor thin film selective growth forming mask 61, the first and second multiple quantum well waveguides 75 and 87 are connected to the first and second III-
Using a mask for selectively growing a group V compound semiconductor thin film,
The process is simple in forming by selective growth.
【００２５】なお、上述においては、本発明による、Ｉ
ＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスクを用
いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成法を、
多重量子井戸型導波路構体の製法に適用した場合の実施
例で述べたが、本発明による、ＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合
物半導体薄膜選択成長形成法は、多重量子井戸型導波路
構体の製法以外の種々の光半導体装置、半導体装置の製
法に適用することもでき、その他、本発明の精神を脱す
ることなしに、種々の変型、変更をなし得るであろう。In the above description, I according to the present invention
A method for selectively growing a group III-V compound semiconductor thin film using a mask for forming a group II-V compound semiconductor thin film,
As described in the embodiment in the case where the present invention is applied to a method of manufacturing a multiple quantum well type waveguide structure, a III-V compound semiconductor thin film selective growth formation using a III-V compound semiconductor thin film selective growth formation mask according to the present invention. The method can be applied to various optical semiconductor devices other than the method of manufacturing the multiple quantum well type waveguide structure and the method of manufacturing the semiconductor device, and various modifications and changes can be made without departing from the spirit of the present invention. Could do it.
【図１】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、順次の工程における略線的平面図（図１Ａ）
及びそのＢ−Ｂ線上の断面図（図１Ｂ）である。FIG. 1 is a view for explaining an embodiment of a method for selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group III-V compound semiconductor thin film according to the present invention; FIG. 5 is a schematic plan view showing sequential steps of an embodiment of a method for manufacturing a multiple quantum well type waveguide structure to which a group III-V compound semiconductor thin film selective growth forming method using a compound semiconductor thin film selective growth forming mask is applied; (FIG. 1A)
FIG. 1B is a sectional view (FIG. 1B) of FIG.
【図２】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、図１に示す順次の工程に続く順次の工程にお
ける略線的平面図（図２Ａ）及びそのＢ−Ｂ線上の断面
図（図２Ｂ）である。FIG. 2 is a view for explaining an embodiment of a method for selectively growing a group III-V compound semiconductor thin film using a mask for forming a group III-V compound semiconductor thin film according to the present invention; In the embodiment of the method of manufacturing a multiple quantum well type waveguide structure to which the method of selectively growing a group III-V compound semiconductor thin film using a mask for forming a selective growth of a compound semiconductor thin film has been applied, the steps following the sequential steps shown in FIG. FIG. 2A is a schematic plan view (FIG. 2A) and a cross-sectional view taken along the line BB (FIG. 2B) in the step of FIG.
【図３】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、図２に示す順次の工程に続く順次の工程にお
ける略線的平面図（図３Ａ）及びそのＢ−Ｂ線上の断面
図（図３Ｂ）である。FIG. 3 is a view for explaining an example of a method for selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group III-V compound semiconductor thin film according to the present invention. In the embodiment of the method of manufacturing a multiple quantum well type waveguide structure to which the method of selectively growing a group III-V compound semiconductor thin film using a mask for forming a selective growth of a compound semiconductor thin film is applied, the sequence following the sequential steps shown in FIG. 3B is a schematic plan view (FIG. 3A) and a cross-sectional view taken along the line BB (FIG. 3B) in the step of FIG.
【図４】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、図３に示す順次の工程に続く順次の工程にお
ける略線的平面図（図４Ａ）及びそのＢ−Ｂ線上の断面
図（図４Ｂ）である。FIG. 4 is a view for explaining an example of a method for selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group III-V compound semiconductor thin film according to the present invention. FIG. 3 is a sequence diagram illustrating an example of a method for manufacturing a multiple quantum well waveguide structure to which a group III-V compound semiconductor thin film selective growth forming method using a compound semiconductor thin film selective growth forming mask is applied. FIG. 4 is a schematic plan view (FIG. 4A) and a cross-sectional view taken along the line BB (FIG. 4B) in the step of FIG.
【図５】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、図４に示す順次の工程に続く順次の工程にお
ける略線的平面図（図５Ａ）及びそのＢ−Ｂ線上の断面
図（図５Ｂ）である。FIG. 5 is a view for explaining an example of a method for selectively growing a group III-V compound semiconductor thin film using a mask for selectively growing a group III-V compound semiconductor thin film according to the present invention; In the embodiment of the method of manufacturing a multiple quantum well type waveguide structure to which the method of selectively growing a group III-V compound semiconductor thin film using a mask for forming a selective growth of a compound semiconductor thin film is applied, the order following the sequential steps shown in FIG. FIG. 5A is a schematic plan view (FIG. 5A) and a cross-sectional view taken along the line BB (FIG. 5B) in the step of FIG.
【図６】本発明による、ＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスクを用いたＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成法の実施例の説明に供する、本発明
による、ＩＩＩ−Ｖ族化合物半導体薄膜選択成長形成用
マスクを用いたＩＩＩ−Ｖ族化合物半導体薄膜選択成長
形成法の適用された多重量子井戸型導波路構体の製法の
実施例の、図５に示す順次の工程に続く順次の工程にお
ける略線的平面図（図６Ａ）及びそのＢ−Ｂ線上の断面
図（図６Ｂ）である。FIG. 6 is a graph illustrating a method for selectively forming a group III-V compound semiconductor thin film using a mask for forming a group III-V compound semiconductor thin film according to an embodiment of the present invention. 5A to 5C of an embodiment of a method for manufacturing a multiple quantum well type waveguide structure to which a group III-V compound semiconductor thin film selective growth forming method using a compound semiconductor thin film selective growth forming mask is applied. FIG. 6 is a schematic plan view (FIG. 6A) and a cross-sectional view taken along the line BB (FIG. 6B) in the step of FIG.
５１ 半導体基板 ５２ 窓 ５３ マスク ５４ 自然酸化膜 ５５ 第１のＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスク ６１ 第２のＩＩＩ−Ｖ族化合物半導体薄膜
選択成長形成用マスク ７１ クラッド層としてのＩＩＩ−Ｖ族化合
物半導体薄膜 ７２ コア層としてのＩＩＩ−Ｖ族化合物半
導体薄膜 ７３ クラッド層としてのＩＩＩ−Ｖ族化合
物半導体薄膜 ７４ ＩＩＩ−Ｖ族化合物半導体積層体 ７５ 第１の多重量子井戸型導波路 ８１ エッチングストッパ層としてのＩＩＩ
−Ｖ族化合物半導体薄膜 ８２ クラッド層としてのＩＩＩ−Ｖ族化合
物半導体薄膜 ８３ コア層としてのＩＩＩ−Ｖ族化合物半
導体薄膜 ８４ クラッド層としてのＩＩＩ−Ｖ族化合
物半導体薄膜 ８５ ＩＩＩ−Ｖ族化合物半導体積層体 ８６ 半導体積層体 ８７ 第２の多重量子井戸型導波路Reference Signs List 51 semiconductor substrate 52 window 53 mask 54 natural oxide film 55 first III-V compound semiconductor thin film selective growth forming mask 61 second III-V compound semiconductor thin film selective growth forming mask 71 III- as cladding layer Group V compound semiconductor thin film 72 III-V compound semiconductor thin film as core layer 73 III-V compound semiconductor thin film as cladding layer 74 III-V compound semiconductor laminate 75 First multiple quantum well waveguide 81 Etching III as stopper layer
-Group V compound semiconductor thin film 82 Group III-V compound semiconductor thin film as cladding layer 83 Group III-V compound semiconductor thin film as core layer 84 Group III-V compound semiconductor thin film as cladding layer 85 Group III-V compound semiconductor lamination Body 86 semiconductor laminate 87 second multiple quantum well waveguide
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭49−87278（ＪＰ，Ａ) 特開 平２−67722（ＪＰ，Ａ) 特開 平２−5513（ＪＰ，Ａ) 特開 平４−115590（ＪＰ，Ａ) 特開 平４−119680（ＪＰ，Ａ) 特開 平１−239984（ＪＰ，Ａ) 特表 昭61−502509（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/31 H01S 5/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-49-87278 (JP, A) JP-A-2-67722 (JP, A) JP-A-2-5513 (JP, A) JP-A-4-87 115590 (JP, A) JP-A-4-119680 (JP, A) JP-A 1-239984 (JP, A) JP-T-61-502509 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/205 H01L 21/31 H01S 5/00
Claims (1)
−Ｖ族化合物半導体薄膜を、第１及び第２のＩＩＩ−Ｖ
族化合物半導体薄膜選択成長形成用マスクを用いて、選
択成長させて形成させるにつき、上記半導体基板上に、
表面に自然酸化膜が形成されているＡｌを含むＩＩＩ−
Ｖ族化合物半導体薄膜でなるマスクを、上記第１のＩＩ
Ｉ−Ｖ族化合物半導体薄膜選択成長形成用マスクとして
形成し、次に、上記半導体基板上に、上記第１のＩＩＩ
−Ｖ族化合物半導体薄膜選択成長形成用マスクを覆って
延長している誘電体薄膜でなるマスクを、上記第２のＩ
ＩＩ−Ｖ族化合物半導体薄膜選択成長形成用マスクとし
て形成し、次に、上記半導体基板上に、上記第１のＩＩ
Ｉ−Ｖ族化合物半導体薄膜を、上記第１及び第２のＩＩ
Ｉ−Ｖ族化合物半導体薄膜選択成長形成用マスクを用い
て選択成長させて形成させ、次に、上記第２のＩＩＩ−
Ｖ族化合物半導体薄膜選択成長形成用マスクを除去し、
次に、上記半導体基板上に、上記第２のＩＩＩ−Ｖ族化
合物半導体薄膜を、上記第１のＩＩＩ−Ｖ族化合物半導
体薄膜選択成長形成用マスクを用いて選択成長させて形
成させることを特徴とするＩＩＩ−Ｖ族化合物半導体薄
膜選択成長形成法。1. A semiconductor device comprising a first substrate and a second substrate.
The first and second III-V compound semiconductor thin films;
Using the group compound semiconductor thin film selective growth forming mask, the selective growth is performed.
III- containing Al having a native oxide film formed on the surface
The mask made of the group V compound semiconductor thin film is used for the first II
It is formed as a mask for selectively growing a group IV compound semiconductor thin film, and then the first III film is formed on the semiconductor substrate.
A mask formed of a dielectric thin film extending over the mask for selective growth formation of the group V compound semiconductor thin film,
Forming a mask for selectively growing a group II-V compound semiconductor thin film, and then forming the first II on the semiconductor substrate;
The group IV-compound semiconductor thin film is formed by the first and second II
It is formed by selective growth using an IV group compound semiconductor thin film selective growth forming mask, and then the second III-
Removing the mask for selective growth formation of the group V compound semiconductor thin film;
Next, the second III-V compound semiconductor thin film is selectively grown on the semiconductor substrate using the first III-V compound semiconductor thin film selective growth forming mask. III-V compound semiconductor thin film selective growth forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04097087A JP3127562B2 (en) | 1992-03-24 | 1992-03-24 | III-V compound semiconductor thin film selective growth forming method using mask for selective growth of III-V compound semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04097087A JP3127562B2 (en) | 1992-03-24 | 1992-03-24 | III-V compound semiconductor thin film selective growth forming method using mask for selective growth of III-V compound semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05275356A JPH05275356A (en) | 1993-10-22 |
| JP3127562B2 true JP3127562B2 (en) | 2001-01-29 |
Family
ID=14182862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04097087A Expired - Fee Related JP3127562B2 (en) | 1992-03-24 | 1992-03-24 | III-V compound semiconductor thin film selective growth forming method using mask for selective growth of III-V compound semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3127562B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3474917B2 (en) * | 1994-04-08 | 2003-12-08 | 日本オプネクスト株式会社 | Method for manufacturing semiconductor device |
| US5877071A (en) * | 1996-09-12 | 1999-03-02 | Motorola, Inc. | Masking methods during semiconductor device fabrication |
-
1992
- 1992-03-24 JP JP04097087A patent/JP3127562B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05275356A (en) | 1993-10-22 |
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