JP3113478B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3113478B2 JP3113478B2 JP05324819A JP32481993A JP3113478B2 JP 3113478 B2 JP3113478 B2 JP 3113478B2 JP 05324819 A JP05324819 A JP 05324819A JP 32481993 A JP32481993 A JP 32481993A JP 3113478 B2 JP3113478 B2 JP 3113478B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- reaction chamber
- board
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置に係り、
特に均一な薄膜を形成するための気相成長装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
In particular, the present invention relates to a vapor phase growth apparatus for forming a uniform thin film.
【０００２】[0002]
【従来の技術】従来から用いられている気相成長装置に
は、ウェハを載置するサセプタを高周波コイルを用いて
加熱し、これによりウェハを間接的に加熱しつつ、反応
性ガスを導入することによりウェハ表面に薄膜を形成す
る縦型炉方式のもの、ウェハを載置する筒型のサセプタ
にウェハを載置し、チャンバーの外側に配設した赤外線
ランプを用いて加熱するシリンダー炉形式のもの、角型
の石英管からなるチャンバー内に設置された平板状のサ
セプタにウェハを載置し、チャンバーの外側に設けられ
た赤外線ランプを用いて加熱するようにし、ウェハを１
枚づつ処理する枚葉式炉とがある。2. Description of the Related Art In a conventional vapor phase epitaxy apparatus, a susceptor on which a wafer is mounted is heated using a high-frequency coil, thereby introducing a reactive gas while indirectly heating the wafer. A vertical furnace type in which a thin film is formed on the surface of a wafer, and a cylindrical furnace type in which a wafer is placed on a cylindrical susceptor on which the wafer is placed and heated using an infrared lamp arranged outside the chamber. The wafer is placed on a flat susceptor placed in a chamber made of a quartz tube having a rectangular shape, and heated using an infrared lamp provided outside the chamber.
There is a single-wafer type furnace for processing one by one.
【０００３】なかでも、近年シリコンウェハの大口径化
に伴い、ウェハ中での膜厚の不均一性が顕在化し、ウェ
ハを１枚づつ処理する枚葉式炉が再び注目されてきてい
る。気相成長装置は、適切な温度に維持された基板近傍
に原料となる反応性ガスを流し、熱分解反応や水素還元
反応などにより該基板上に薄膜を堆積せしめるものであ
る。気相成長によって基板上に均一な膜厚の薄膜を形成
するためには原料ガスの濃度が基板表面近傍の全面にわ
たり一様であることが望ましい。In particular, with the recent increase in the diameter of silicon wafers, non-uniformity of the film thickness in the wafer has become apparent, and a single-wafer furnace for processing wafers one by one has attracted attention again. The vapor phase growth apparatus flows a reactive gas serving as a raw material near a substrate maintained at an appropriate temperature, and deposits a thin film on the substrate by a thermal decomposition reaction, a hydrogen reduction reaction, or the like. In order to form a thin film having a uniform thickness on a substrate by vapor phase growth, it is desirable that the concentration of the source gas be uniform over the entire surface near the substrate surface.
【０００４】しかしながら横型の気相成長装置では原料
ガスがほぼ水平方向から導入される構造であるため、 １）原料ガスが上流側から下流側に進むにしたがって消
費され、その濃度が徐々に薄くなる。However, since the horizontal type vapor phase growth apparatus has a structure in which the source gas is introduced from a substantially horizontal direction, 1) the source gas is consumed from the upstream side to the downstream side, and its concentration gradually decreases. .
【０００５】２）濃度境界層が上流側から下流側に進む
に従って発達し、その厚さが厚くなるため、原料ガス濃
度は流れ方向に分布をもち、基板上に堆積する膜厚が指
数関数的に減少し、均一にならない。[0005] 2) Since the concentration boundary layer develops from the upstream side to the downstream side and its thickness increases, the source gas concentration has a distribution in the flow direction, and the film thickness deposited on the substrate is exponential. And not uniform.
【０００６】などという問題があった。[0006] There was such a problem.
【０００７】そこで従来から基板を回転させ基板の円周
方向における成長速度を平均化することにより、基板上
に堆積する膜厚の均一化をはかる手段も試みられている
（特開昭５３−１３０９７号公報）。In view of the above, conventionally, means for rotating the substrate and averaging the growth rate in the circumferential direction of the substrate to uniform the film thickness deposited on the substrate has been attempted (Japanese Patent Application Laid-Open No. 53-13097). No.).
【０００８】しかしながら基板の大口径化に伴い、基板
の回転だけでは膜厚の均一性を十分に得ることができな
くなってきている。However, with the increase in the diameter of the substrate, it has become impossible to obtain sufficient uniformity of the film thickness only by rotating the substrate.
【０００９】そこでこの問題を解決すべく、図６に示す
ように石英製の本体１０２の内部に複数個のウェハ１０
３が装着されると共に炭化ケイ素被覆された炭素からな
る、回転可能なサセプタ１０４と、該サセプタ１０４の
上流側に装着される平板１０５と、該平板１０５および
サセプタ１０４を所望の温度に加熱するヒータ部１０６
と、先端にガスノズル部１０７が設けられ原料ガスを装
置本体１０２内に供給する注入配管１０８とを主要部と
して構成されている。そして装置本体１０２は断面矩形
状の反応管１０９と注入配管１０８が接続される側壁部
１１０と、未反応の原料ガスを矢印Ｂ方向に排気する排
気部１１１とから構成されている。平板１０５はサセプ
タ１０４と同一高さとなるように、支持部材１１５を介
してサセプタ１０４の近接位置に固着されている。さら
に、前記平板１０５の平面部１１６には、直線部１１７
が装置本体１０２の幅方向（矢印Ｙで示す）に平行とな
るように上流側に形成されると共に、湾曲部１１８がサ
セプタ１０４の周縁に沿うように下流側に形成されてい
る。In order to solve this problem, as shown in FIG.
3, a rotatable susceptor 104 made of carbon coated with silicon carbide, a flat plate 105 mounted on the upstream side of the susceptor 104, and a heater for heating the flat plate 105 and the susceptor 104 to a desired temperature Part 106
A gas nozzle 107 is provided at the tip, and an injection pipe 108 that supplies a raw material gas into the apparatus main body 102 is configured as a main part. The apparatus main body 102 includes a side wall portion 110 to which a reaction tube 109 having a rectangular cross section and an injection tube 108 are connected, and an exhaust portion 111 for exhausting unreacted raw material gas in the direction of arrow B. The flat plate 105 is fixed at a position close to the susceptor 104 via a support member 115 so that the flat plate 105 is at the same height as the susceptor 104. Further, the flat portion 116 of the flat plate 105 has a straight portion 117.
Are formed on the upstream side so as to be parallel to the width direction of the apparatus main body 102 (indicated by the arrow Y), and the curved portion 118 is formed on the downstream side along the periphery of the susceptor 104.
【００１０】図７にこの例におけるＡ１−Ａ２位置での
被膜の成長速度を示す。この図からあきらかなように、
この例では、平板１０５において成長速度の低下を進行
させ、サセプタ１０４に原料ガスが到達したときの成長
速度を安定化させることで、サセプタ１０４に載置され
たウェハ１０３の表面への被膜の成長速度を均一化して
いる。FIG. 7 shows the growth rate of the film at the positions A1-A2 in this example. As is clear from this figure,
In this example, the growth rate of the film on the surface of the wafer 103 placed on the susceptor 104 is increased by decreasing the growth rate of the flat plate 105 and stabilizing the growth rate when the source gas reaches the susceptor 104. Speed is made uniform.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、この気
相成長装置では、その構成上、基板表面での被膜の成長
速度が大きく減少し、生産性が大幅に低下する。また流
れ方向の成長速度が指数関数的に減少するため、大口径
のウェハ上では成長速度の均一化が十分にできないなど
の問題があった。However, in this vapor phase growth apparatus, the growth rate of the film on the substrate surface is greatly reduced due to its configuration, and the productivity is greatly reduced. Further, since the growth rate in the flow direction decreases exponentially, there has been a problem that the growth rate cannot be sufficiently uniformized on a large-diameter wafer.
【００１２】本発明は、前記実情に鑑みてなされたもの
で、横型あるいは枚葉式の気相成長装置において簡単な
構成で成長速度の低下を伴うことなく、基板表面での成
長速度を事実上均一にすることの可能な半導体製造装置
を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and has a simple configuration in a horizontal or single-wafer type vapor phase growth apparatus. It is an object of the present invention to provide a semiconductor manufacturing apparatus that can be made uniform.
【００１３】[0013]
【課題を解決するための手段】そこで本発明では、被処
理基板の上流側に配設され、前記被処理基板上に到達す
るガスの濃度分布を制御すべく、前記反応室の中心から
端の方に向かって前記反応室の上流側に突出した形状を
有するとともに前記基板とほぼ同一高さの位置に設けら
れたプレデポボードを具備したことを特徴とする。Therefore, according to the present invention, in order to control the concentration distribution of gas reaching the substrate to be processed, which is disposed on the upstream side of the substrate to be processed, the center of the reaction chamber from the end thereof is controlled. A predeposition board having a shape protruding toward the upstream side of the reaction chamber toward the side and provided at a position substantially at the same height as the substrate.
【００１４】望ましくは、このプレデポボードは前記加
熱手段とは独立に制御可能なように構成された第２の加
熱手段を具備する。[0014] Preferably, the predepot board includes a second heating means configured to be controllable independently of the heating means.
【００１５】また本発明の第２では、被処理基板の上流
側に配設され、前記被処理基板上に到達するガスの濃度
分布を制御すべく、前記基板面とほぼ同一平面上に設け
られたプレデポボードを具備し、このプレデポボード
は、前記ガス導入部から導入されるガスの濃度分布を測
定し、その濃度分布のばらつきを補償するように上流端
の形状が決定されていることを特徴とする。According to a second aspect of the present invention, in order to control the concentration distribution of gas reaching the substrate to be processed, the substrate is provided on the upstream side of the substrate to be processed, and is provided on substantially the same plane as the substrate surface. A pre-depot board, wherein the pre-depot board measures the concentration distribution of the gas introduced from the gas introduction unit, and the shape of the upstream end is determined so as to compensate for variations in the concentration distribution. .
【００１６】本発明の第３では、反応室の中心から端の
方に向かうほど反応性ガスの濃度が薄くなるように、プ
レデポボードの温度を所望の温度に加熱する。In the third aspect of the present invention, the temperature of the predeposition board is heated to a desired temperature such that the concentration of the reactive gas decreases from the center to the end of the reaction chamber.
【００１７】[0017]
【作用】上記構成によれば、ガス導入部より流入した反
応性ガスは、反応炉幅方向にほぼ一様な流れとなってプ
レデポボードに到達する。According to the above configuration, the reactive gas flowing from the gas inlet reaches the predeposition board as a substantially uniform flow in the width direction of the reactor.
【００１８】該プレデポボードの上流端は、下流に向か
いほぼ凸状の曲線をなしており、この曲線の頂点でサセ
プタに接するように構成される。前記プレデポボードに
到達した反応性ガスは、前記プレデポボードの前記上流
端形状に沿った形で前記反応室幅方向に濃度分布をも
つ。さらに、濃度分布をもった前記反応性ガスは基板上
に到達し、基板上に所望の膜厚分布をもった被膜の成長
を行うことが可能となる。 ここで前記プレデポボード
の前記上流端形状の決定方法を図面を参照しつつ説明す
る。図５は図４にＸ1 ，Ｘ2 およびＹ1 ，Ｙ2 で示すサ
セプタ上の位置と膜の成長速度との関係を示す図であ
る。すなわちサセプタ上において、上流側であるＸ1 付
近では原料ガスの濃度が高く、また濃度境界層（成膜時
のガス成分の消費によるガス組成変化領域）厚さも薄い
ため、膜の成長速度も高いが、該原料ガスが下流側（Ｘ
2 ）に進むにつれて、その濃度が低下し、濃度境界層も
発達して厚くなるため、膜の成長速度も指数関数的に低
下する。The upstream end of the predepot board has a substantially convex curve toward the downstream, and is configured to contact the susceptor at the apex of the curve. The reactive gas that has reached the predeposition board has a concentration distribution in the width direction of the reaction chamber along the shape of the upstream end of the predeposition board. Further, the reactive gas having a concentration distribution reaches the substrate, and a film having a desired film thickness distribution can be grown on the substrate. Here, a method of determining the upstream end shape of the predepot board will be described with reference to the drawings. FIG. 5 is a diagram showing the relationship between the position on the susceptor indicated by X1, X2 and Y1, Y2 in FIG. 4 and the growth rate of the film. That is, on the susceptor, near X1, which is on the upstream side, the concentration of the source gas is high, and the thickness of the concentration boundary layer (the gas composition change region due to consumption of gas components during film formation) is thin, so that the film growth rate is high. , The source gas flows downstream (X
As the process proceeds to 2), the concentration decreases, and the concentration boundary layer also develops and becomes thicker, so that the growth rate of the film also decreases exponentially.
【００１９】従ってサセプタを回転させて成長を行い、
サセプタ円周方向の成長速度を平均化しても、前記指数
関数的な成長速度低下のため、サセプタの回転中心から
離れていくに従い成長速度が早くなってしまう。これを
相殺するためには反応炉の中心とその端で、成長速度に
差をつける必要がある。このため、炉の中心から端の方
に向かい原料ガスの濃度を薄くする。すなわちプレデポ
ボードの上流端形状を炉の中心から端の方にむかって突
出した形状にすることにより、炉の中心から端の方に向
かって原料ガスの濃度を薄くするように構成した。さら
にサセプタ上での平均成長速度をなるべく低下させない
ようにするため、プレデポボードの上流端形状は、その
曲線の頂点でサセプタと接するように構成した。Therefore, the growth is performed by rotating the susceptor.
Even if the growth rate in the circumferential direction of the susceptor is averaged, the growth rate increases as the distance from the rotation center of the susceptor increases due to the exponential decrease in the growth rate. In order to offset this, it is necessary to make a difference in the growth rate between the center and the end of the reactor. For this reason, the concentration of the source gas is reduced from the center of the furnace toward the end. That is, the upstream end shape of the predeposition board is formed to protrude from the center of the furnace toward the end, so that the concentration of the raw material gas decreases from the center of the furnace toward the end. In order to further reduce the average growth rate on the susceptor as much as possible, the shape of the upstream end of the predepot board was configured to contact the susceptor at the vertex of the curve.
【００２０】望ましくは微調整を第２の加熱手段により
プレデポボードの温度調整により行うようにすれば、よ
り高精度の膜厚および膜質コントロールが可能となる。If the fine adjustment is desirably performed by adjusting the temperature of the predeposition board by the second heating means, it is possible to control the film thickness and film quality with higher accuracy.
【００２１】また本発明の第２によれば、他のいろいろ
な原因により、ガスの濃度分布に大きなばらつきがある
場合にも、このばらつきを補償するような、上流端の形
状をもつプレデポボードを用いることにより均一な薄膜
成長を行うことができ、プレデポボードの形状を選択し
装着するのみでよいため、設定が極めて容易である。上
流端の形状はガスの濃度分布が炉の端で大きくなってい
るような場合には、炉芯に垂直な直線あるいは炉の端か
ら中心にむかって突出した形状とするなど、適宜変更可
能である。またプレデポボードは、上流端の形状の異な
るもの何種類か用意しておくようにし、取り替えるよう
にしてもよいし、また相対位置を変更可能な分割形状と
し、上流端の形状が連続的に変化できるような構造をと
るようにすれば、微調整を容易に行うことができる。According to the second aspect of the present invention, even when there is a large variation in the gas concentration distribution due to various other causes, a predepot board having an upstream end shape is used to compensate for this variation. Thereby, uniform thin film growth can be performed, and it is only necessary to select and mount the shape of the predepot board, so that the setting is extremely easy. In the case where the gas concentration distribution is large at the end of the furnace, the shape of the upstream end can be changed as appropriate such as a straight line perpendicular to the furnace core or a shape protruding from the end of the furnace toward the center. is there. In addition, the predepot board may be prepared with several types having different shapes at the upstream end, may be replaced, or may be a divided shape whose relative position can be changed, and the shape of the upstream end can be continuously changed With such a structure, fine adjustment can be easily performed.
【００２２】さらに本発明の第３によれば、プレデポボ
ードの形状ではなく、反応室の中心から端の方に向かう
ほど反応性ガスの濃度が薄くなるように制御しているた
め、成長条件が変化した場合にもプレデポボードを取り
替えることなくより簡単に成長薄膜の均一化をはかるこ
とができる。Further, according to the third aspect of the present invention, the growth condition is changed because the concentration of the reactive gas is controlled so as to decrease from the center of the reaction chamber toward the end, instead of the shape of the predepot board. In this case, the grown thin film can be more easily made uniform without replacing the predepot board.
【００２３】[0023]
【実施例】以下、本発明の実施例について、図面を参照
しつつ詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００２４】図１(a) および(b) は、本発明実施例のＣ
ＶＤ装置の平面断面図および正面断面図である。FIGS. 1 (a) and 1 (b) show the C of the embodiment of the present invention.
It is the plane sectional view and front sectional view of a VD device.
【００２５】このＣＶＤ装置は、サセプタ３の上流側
に、上流端形状が反応炉１の中心から端の方にむかって
突出した形状を有するプレデポボード８（図１(c) 参
照）を配設したことを特徴とする。In this CVD apparatus, a predeposition board 8 (see FIG. 1 (c)) having an upstream end shape protruding from the center of the reaction furnace 1 toward the end is disposed upstream of the susceptor 3. It is characterized by the following.
【００２６】すなわち、この装置は、透明石英、ＳＵＳ
などからなる反応炉１とこの反応炉１のガス導入部９の
内部に配設されウェハ２を載置する円形のサセプタ３
と、このサセプタ３を回転すべくモータ（図示せず）に
軸支された回転軸４と、このガス導入部７に支持具９を
介してとりつけられウェハと同一面をなすとともに、サ
セプタ３の上流側に上流端形状が反応炉１の中心から端
の方にむかって突出した形状を有するプレデポボード８
を具備している。このプレデポボード８の上流端の形状
１２は図１(c) に示すように頂点を通る接線をｚ＝０と
なるようにし ｚ＝ａｘ5 ＋ｂｘ4 ＋ｃｘ3 ＋ｄｘ2 ＋ｅｘ＋ｆ を満たすようにした。That is, this apparatus uses transparent quartz, SUS
And a circular susceptor 3 disposed inside a gas inlet 9 of the reactor 1 for mounting the wafer 2 thereon.
A rotating shaft 4 pivotally supported by a motor (not shown) to rotate the susceptor 3, and mounted on the gas introducing portion 7 via a support 9 so as to be flush with the wafer. On the upstream side, a predeposition board 8 having an upstream end shape protruding from the center of the reactor 1 toward the end.
Is provided. This shape 12 of the upstream end of Puredepobodo 8 was formed to meet the line tangential to the apex as the z = 0 z = ax 5 + bx 4 + cx 3 + dx 2 + ex + f as shown in Figure 1 (c).
【００２７】ここでａ：-24839.743590 ｂ： 5000.728438 ｃ： -384.855769 ｄ： 10.234193 ｅ： -0.121318 ｆ： -0.207992 また下流端形状１３はサセプタ３の周縁に沿うように形
成されている。Here, a: -24839.743590 b: 5000.728438 c: -384.855769 d: 10.234193 e: -0.121318 f: -0.207992 The downstream end shape 13 is formed along the periphery of the susceptor 3.
【００２８】さらに反応炉１の外部にはウェハ２および
サセプタ３およびプレデポボード８を加熱するための赤
外線ランプ５が配設され、さらにこの上方には反射板が
設けられ、赤外線ランプからの熱の熱効率を高めるよう
になっている。Further, an infrared lamp 5 for heating the wafer 2, the susceptor 3 and the predeposition board 8 is disposed outside the reaction furnace 1, and a reflection plate is further provided above the infrared lamp 5, and a thermal efficiency of heat from the infrared lamp is provided. Is to increase.
【００２９】また反応炉１の一端にはガス導入部７が設
けられ、反応ガスまたは反応ガスとキャリアガスとの混
合ガスが、反応炉１の幅方向にほぼ一様な状態で供給さ
れる。また、他端にはガス排出口１１が設けられ、排気
ダクト（図示せず）を介して外部に排出されるようにな
っている。さらに反応炉の側壁には温度をモニターする
ための熱電対を挿入する熱電対挿入口が設置されてい
る。A gas introducing section 7 is provided at one end of the reaction furnace 1, and a reaction gas or a mixed gas of the reaction gas and the carrier gas is supplied in a substantially uniform state in the width direction of the reaction furnace 1. Further, a gas discharge port 11 is provided at the other end, and is discharged outside through an exhaust duct (not shown). Further, a thermocouple insertion port for inserting a thermocouple for monitoring temperature is provided on a side wall of the reactor.
【００３０】例えばこのガス導入口はシュラウドによっ
て層流をなしてチャンバー内を流れるように構成され、
バッファタンクとシュラウドとの間にはメッシュ状の金
属または石英製のフィルタがプレートを介して取り付け
られており、各層内のガス流速を一様にしている。For example, the gas inlet is configured to flow through the chamber in a laminar flow by the shroud.
A mesh metal or quartz filter is mounted between the buffer tank and the shroud via a plate to make the gas flow rate in each layer uniform.
【００３１】この装置を用いて、シリコンウェハ２をサ
セプタ３に載置し、ガス導入口７から、シリコンウェハ
２に向けて反応性ガスを導入し、側壁の熱電対挿入口か
ら挿通された熱電対でサセプタ裏面の温度を検出すると
ともに、光ファイバーによってウェハ裏面の温度を検出
し、この検出値にもとづいて、赤外線ランプ５の光量を
制御しウェハ温度を高精度に調整するようになってい
る。Using this apparatus, the silicon wafer 2 is placed on the susceptor 3, a reactive gas is introduced from the gas inlet 7 toward the silicon wafer 2, and the thermoelectric gas inserted through the thermocouple insertion port on the side wall is used. The temperature of the back surface of the susceptor is detected as a pair, and the temperature of the back surface of the wafer is detected by an optical fiber. Based on the detected value, the light amount of the infrared lamp 5 is controlled to adjust the wafer temperature with high accuracy.
【００３２】ここでウェハ温度は８５０〜１２００℃に
設定される。Here, the wafer temperature is set at 850 to 1200 ° C.
【００３３】次に、このエピタキシャル成長装置を用い
たエピタキシャル成長方法について説明する。Next, an epitaxial growth method using this epitaxial growth apparatus will be described.
【００３４】まず、シリコンウェハ２をサセプタ３に載
置し、回転手段により回転軸４を介してサセプタ３を回
転する。First, the silicon wafer 2 is placed on the susceptor 3, and the susceptor 3 is rotated by the rotating means via the rotating shaft 4.
【００３５】この後ガス導入口７から窒素ガスを供給し
て反応炉１内をＮ2 でパージする。続いてガス導入口７
から水素Ｈ2 ガスを供給して反応炉１内をＨ2 でパージ
し、Ｈ2 雰囲気中で赤外線ランプ５によりウェハをエピ
タキシャル成長温度（９００〜１０５０℃）まで加熱す
る。Thereafter, nitrogen gas is supplied from the gas inlet 7 to purge the inside of the reactor 1 with N 2 . Then gas inlet 7
Then, the inside of the reaction furnace 1 is purged with H 2 by supplying hydrogen H 2 gas from above, and the wafer is heated to the epitaxial growth temperature (900 to 1050 ° C.) by the infrared lamp 5 in the H 2 atmosphere.
【００３６】そして成長温度に到達すると、サセプタお
よびウェハ同様プレデポボード８もほぼ同一温度に加熱
され、ガス導入口７からはＨ2 で希釈されたＳｉＨ4 が
供給される。そしてこのガスは、プレデポボード８を介
してウェハ２表面に沿って流れ、ウェハ表面にシリコン
エピタキシャル成長膜を形成する。When the growth temperature is reached, the predeposition board 8 is heated to substantially the same temperature as the susceptor and the wafer, and SiH 4 diluted with H 2 is supplied from the gas inlet 7. Then, this gas flows along the surface of the wafer 2 through the predeposition board 8, and forms a silicon epitaxial growth film on the wafer surface.
【００３７】このようにして得られたエピタキシャル成
長膜は均一で極めて結晶性の良好な膜となっている。す
なわち、サセプタおよびウェハ同様プレデポボード８も
ほぼ同一温度に加熱されており、プレデポボード８の上
流端の形状が最適形状となっているため、ガスがウェハ
表面に所望の濃度分布で到達し、ウェハ２を回転させる
と、ウェハ２の表面全体にわたり均一な成長速度を得る
ことができる。The epitaxially grown film thus obtained is a film having a uniform and extremely good crystallinity. That is, the predeposition board 8 is heated to almost the same temperature as the susceptor and the wafer, and the upstream end of the predeposition board 8 has an optimal shape. When rotated, a uniform growth rate can be obtained over the entire surface of the wafer 2.
【００３８】このときのウェハ２表面での平均成長速度
とその平均成長速度を中心とする速度分布とを測定した
結果を次の表に示す。従来例としては円形サセプタを用
いたものおよび図６に示したプレデポボードを用いたも
のとの２つを比較のために示した。The results of measuring the average growth rate on the surface of the wafer 2 and the velocity distribution centered on the average growth rate are shown in the following table. Two conventional examples, one using a circular susceptor and one using a predepot board shown in FIG. 6, are shown for comparison.
【００３９】 この表の結果からも、本発明の装置によればより速くよ
り均一な膜を得ることができる。[0039] From the results shown in this table, it is possible to obtain a faster and more uniform film according to the apparatus of the present invention.
【００４０】また図２はサセプタ中心からの距離と膜の
成長速度との関係を測定した結果を示す比較図である。
この図からも同様に本発明の装置によればより速くより
均一な膜を得ることができることがわかる。FIG. 2 is a comparison diagram showing the results of measuring the relationship between the distance from the susceptor center and the growth rate of the film.
It can also be seen from this figure that a more uniform film can be obtained faster with the apparatus of the present invention.
【００４１】なお前記実施例では、上流端が図１(c) に
示した形状のプレデポボードを用いたが、これに限定さ
れることなく、適宜変形可能であり、また導入されるガ
スが分布を持つような場合に、これを補償するような形
状にし、均一な膜成長を行うようにすることも可能であ
る。In the above embodiment, the predepot board whose upstream end has the shape shown in FIG. 1 (c) is used. However, the present invention is not limited to this. In such a case, it is also possible to make the shape to compensate for this and perform uniform film growth.
【００４２】次に本発明の第２の実施例について説明す
る。Next, a second embodiment of the present invention will be described.
【００４３】前記実施例ではプレデポボード８とウェハ
２およびサセプタ３は同一の赤外線ランプ５によって加
熱したが、この例では図３(a) および(b) に示すよう
に、プレデポボード８は独立して制御される第２の赤外
線ランプ１４によって加熱されるようになっており、こ
のプレデポボード８の上流端形状は直線となっている。
他の部分については前記第１の実施例とまったく同様に
形成されている。In the above embodiment, the predeposition board 8, the wafer 2 and the susceptor 3 are heated by the same infrared lamp 5, but in this example, as shown in FIGS. 3 (a) and 3 (b), the predeposition board 8 is controlled independently. The pre-deposition board 8 is heated by a second infrared lamp 14, and the upstream end of the pre-deposition board 8 is straight.
The other parts are formed in exactly the same manner as in the first embodiment.
【００４４】この装置によっても、均一で信頼性の高い
薄膜形成を行うことが可能となる。なお、前記実施例で
は、枚葉式のエピタキシャル成長炉について説明した
が、ウェハを多数枚搭載するいわゆるバッチ式の炉につ
いても同様の効果を得ることができることはいうまでも
ない。特により均一な膜成長が求められる横型の半導体
装置全般にわたり、同様の効果を得ることができる。With this apparatus, it is also possible to form a uniform and highly reliable thin film. In the above embodiment, a single-wafer type epitaxial growth furnace has been described. However, it is needless to say that the same effect can be obtained with a so-called batch type furnace in which a large number of wafers are mounted. In particular, the same effect can be obtained over all the lateral semiconductor devices requiring more uniform film growth.
【００４５】[0045]
【発明の効果】以上説明してきたように、本発明によれ
ば、ウェハの上流側に周辺部に向かって突出した上流端
形状をなすプレデポボードを配設することにより、より
速くより均一な膜を成長せしめることが可能となる。As described above, according to the present invention, a predepot board having an upstream end shape protruding toward the peripheral portion is disposed on the upstream side of the wafer, whereby a faster and more uniform film can be formed. It is possible to grow.
【図１】本発明実施例の気相成長装置および同装置で用
いられるプレデポボードの上流端形状を示す図。FIG. 1 is a diagram showing a vapor phase growth apparatus according to an embodiment of the present invention and an upstream end shape of a predeposition board used in the apparatus.
【図２】サセプタ中心からの距離と膜の成長速度との関
係を示す比較図。FIG. 2 is a comparison diagram showing a relationship between a distance from a susceptor center and a growth rate of a film.
【図３】本発明の第２の実施例の気相成長装置を示す
図。FIG. 3 is a diagram showing a vapor phase growth apparatus according to a second embodiment of the present invention.
【図４】サセプタ上の位置を示す説明図。FIG. 4 is an explanatory diagram showing a position on a susceptor.
【図５】成長速度とサセプタ上の位置との関係を示す説
明図。FIG. 5 is an explanatory diagram showing a relationship between a growth rate and a position on a susceptor.
【図６】従来例の気相成長装置を示す図。FIG. 6 is a diagram showing a conventional vapor phase growth apparatus.
【図７】図６の例におけるＡ１−Ａ２位置での被膜の成
長速度を示す図FIG. 7 is a view showing a growth rate of a coating film at an A1-A2 position in the example of FIG. 6;
１ 反応炉 ２ ウェハ ３ サセプタ ４ 回転軸 ５ 赤外線ランプ ６ 反射板 ７ ガス導入口 ８ プレデポボード ９ 支持部 DESCRIPTION OF SYMBOLS 1 Reaction furnace 2 Wafer 3 Susceptor 4 Rotation axis 5 Infrared lamp 6 Reflector 7 Gas inlet 8 Predepot board 9 Support part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 丸谷 新治 神奈川県平塚市山下726−５−401 (72)発明者 山田 強 神奈川県平塚市南豊田197−17−105 (56)参考文献 特開 昭60−211913（ＪＰ，Ａ) 実開 平２−136064（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Shinji Marutani 726-5-401 Yamashita, Hiratsuka-shi, Kanagawa (72) Inventor Tsuyoshi Yamada 197-17-105, Minami-Toyoda, Hiratsuka-shi, Kanagawa (56) References JP 60-211913 (JP, A) Japanese Utility Model 2-136064 (JP, U) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/205
Claims (4)
するガス導入部と、 前記反応室内に、被処理基板を支持する基板支持機構
と、 前記被処理基板を加熱する加熱手段と、 前記被処理基板の上流側に配設され、前記被処理基板上
に到達するガスの濃度分布を制御すべく、前記反応室の
中心から端の方に向かって前記反応室の上流側に突出し
た形状を有するとともに前記被処理基板面とほぼ同一平
面上に設けられたプレデポボードと、 を具備し、 気相成長法により前記被処理基板表面に薄膜を成長せし
めるようにしたことを特徴とする半導体製造装置。1. A reaction chamber, a gas introduction unit for introducing a reactive gas into the reaction chamber, a substrate support mechanism for supporting a substrate to be processed in the reaction chamber, and a heating unit for heating the substrate to be processed. Arranged upstream of the substrate to be processed, and protruded from the center of the reaction chamber toward the end toward the end of the reaction chamber to control the concentration distribution of the gas reaching the substrate to be processed. A predeposition board having a shape and provided substantially on the same plane as the surface of the substrate to be processed, wherein a thin film is grown on the surface of the substrate to be processed by a vapor phase growth method. apparatus.
独立に制御可能なように構成された第２の加熱手段を具
備するものであることを特徴とする請求項１に記載の半
導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein said pre-deposition board includes a second heating means configured to be controllable independently of said heating means.
するガス導入部と、 前記反応室内に、被処理基板を支持する基板支持機構
と、 前記被処理基板を加熱する加熱手段と、 前記被処理基板の上流側に着脱自在に配設され、前記被
処理基板上に到達するガスの濃度分布を制御すべく、前
記被処理基板面とほぼ同一平面上に設けられるプレデポ
ボードとを具備し、 前記プレデポボードは、前記ガス導入部から導入される
ガスの濃度分布を測定し、その濃度分布のばらつきを補
償するように上流端の形状を変更可能なように構成さ
れ、気相成長法により前記被処理基板表面に薄膜を成長
せしめるようにしたことを特徴とする半導体製造装置。3. A reaction chamber, a gas introduction unit for introducing a reactive gas into the reaction chamber, a substrate support mechanism for supporting a substrate to be processed in the reaction chamber, and a heating unit for heating the substrate to be processed. A predeposition board, which is detachably provided on the upstream side of the substrate to be processed and is provided on a substantially same plane as the surface of the substrate to be processed, in order to control a concentration distribution of gas reaching the substrate to be processed. The predepot board is configured to measure the concentration distribution of the gas introduced from the gas introduction unit, and to be able to change the shape of the upstream end so as to compensate for the variation in the concentration distribution, and the vapor deposition method is used. A semiconductor manufacturing apparatus wherein a thin film is grown on a surface of a substrate to be processed.
と、 前記被処理基板を加熱する第１の加熱手段と、 前記被処理基板の上流側で、前記被処理基板面とほぼ同
一平面上に設けられたプレデポボードと、 前記反応室の中心から端の方に向かうほど前記反応性ガ
スの濃度が薄くなるように、前記プレデポボードの温度
を所望の温度に加熱する第２の加熱手段とを具備し、 気相成長法により前記被処理基板表面に薄膜を成長させ
ることを特徴とする半導体製造装置。4. A reaction chamber, a gas introduction unit for introducing a reactive gas into the reaction chamber, a substrate support mechanism for supporting a substrate to be processed in the reaction chamber, and a first unit for heating the substrate to be processed. Heating means, a predeposition board provided on the same plane as the surface of the substrate to be processed, on the upstream side of the substrate to be processed, and the concentration of the reactive gas decreases toward the end from the center of the reaction chamber. A second heating means for heating the temperature of the predeposition board to a desired temperature, wherein a thin film is grown on the surface of the substrate by a vapor phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05324819A JP3113478B2 (en) | 1993-12-22 | 1993-12-22 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05324819A JP3113478B2 (en) | 1993-12-22 | 1993-12-22 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07183220A JPH07183220A (en) | 1995-07-21 |
| JP3113478B2 true JP3113478B2 (en) | 2000-11-27 |
Family
ID=18170031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05324819A Expired - Fee Related JP3113478B2 (en) | 1993-12-22 | 1993-12-22 | Semiconductor manufacturing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3113478B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4719541B2 (en) * | 2005-09-16 | 2011-07-06 | 大陽日酸株式会社 | Semiconductor thin film growth equipment |
| JP2007095889A (en) * | 2005-09-28 | 2007-04-12 | Ushio Inc | Light irradiation heating method |
| JP5546287B2 (en) * | 2010-02-26 | 2014-07-09 | スタンレー電気株式会社 | Vapor growth equipment |
| KR101525210B1 (en) * | 2013-12-20 | 2015-06-05 | 주식회사 유진테크 | Apparatus for processing substrate |
-
1993
- 1993-12-22 JP JP05324819A patent/JP3113478B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07183220A (en) | 1995-07-21 |
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