JP3105063B2 - Thin film evaluation method - Google Patents
Thin film evaluation methodInfo
- Publication number
- JP3105063B2 JP3105063B2 JP04071439A JP7143992A JP3105063B2 JP 3105063 B2 JP3105063 B2 JP 3105063B2 JP 04071439 A JP04071439 A JP 04071439A JP 7143992 A JP7143992 A JP 7143992A JP 3105063 B2 JP3105063 B2 JP 3105063B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- growth chamber
- substrate
- gas
- film growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超ＬＳＩ等の半導体デ
バイス等を製造する際に、基板の表面に形成された薄膜
を評価する薄膜評価方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film evaluation method for evaluating a thin film formed on a surface of a substrate when manufacturing a semiconductor device such as an VLSI.
【０００２】[0002]
【従来の技術】例えば半導体ウェハの表面に薄膜を成長
させる薄膜成長技術は、半導体デバイスの高性能化のた
めのキー・テクノロジーの一つであり、特にＣＶＤ（化
学的気相成長）法による薄膜成長は、半導体製造工程に
おいて広く用いられている。2. Description of the Related Art A thin film growth technique for growing a thin film on a surface of a semiconductor wafer, for example, is one of the key technologies for improving the performance of a semiconductor device, and in particular, a thin film by a CVD (Chemical Vapor Deposition) method. Growth is widely used in semiconductor manufacturing processes.
【０００３】ＣＶＤ法による薄膜成長の代表的なもの
は、高周波加熱あるいは赤外線ランプ加熱等により、基
板を加熱し、薄膜成長室内に原料ガス等の供給ガスを導
入して、所望の薄膜を成長させるものである。A typical example of thin film growth by the CVD method is to heat a substrate by high frequency heating or infrared lamp heating, and to introduce a supply gas such as a raw material gas into a thin film growth chamber to grow a desired thin film. Things.
【０００４】ここに、半導体ウェハの表面に形成された
薄膜が所定の品質を有しているか否かを評価する必要が
ある。従来、この評価は、バッチ処理、即ち多数枚の半
導体ウェハを薄膜成長室内に収容して同時に多数枚の半
導体ウェハの薄膜成長を行うものにあっては、薄膜成長
室内にテストピースを入れ、薄膜成長後にテストピース
に形成された薄膜を分析することによって一般に行われ
ていた。Here, it is necessary to evaluate whether or not a thin film formed on the surface of a semiconductor wafer has a predetermined quality. Conventionally, this evaluation has been carried out in batch processing, that is, in a case where a large number of semiconductor wafers are accommodated in a thin film growth chamber and a large number of semiconductor wafers are simultaneously grown, a test piece is placed in the thin film growth chamber, and It is commonly done by analyzing the thin film formed on the test piece after growth.
【０００５】一方、近年、超ＬＳＩ等の半導体デバイス
の高集積化が目覚ましく、それに伴い基板の大型化が進
んでいる。その結果、上記多数枚同時処理に対して基板
を一枚ずつ処理する枚葉式のものが、大型半導体ウェハ
への対応が比較的容易であること、一枚ずつの処理によ
り薄膜の成長の高精度化、成長膜の面内均一化が容易で
あること等の利点を有することから注目されている。On the other hand, in recent years, high integration of semiconductor devices such as VLSI has been remarkable, and accordingly, the size of substrates has been increasing. As a result, the single-wafer type, in which the substrates are processed one by one for the simultaneous processing of a large number of wafers, is relatively easy to handle large semiconductor wafers, and the processing of one by one increases the thin film growth. Attention has been paid to its advantages such as improved accuracy and easy in-plane uniformity of the grown film.
【０００６】この枚葉式処理の場合成長した薄膜を評価
するために、基板と形状の異なる小さなテストピースを
入れることがハンドリングの関係から難しく、かといっ
て基板の一部を検査のために使用することも基板の他の
部分に悪影響を与えたり、歩留りが低下したりして好ま
しくない。また、抜取り検査も成膜の品質保証を完全に
行うことが困難であるし、コストアップにつながる。そ
のため、基板に、非接触、非破壊で薄膜を分析評価する
方法の導入が必要となっている。In this single-wafer processing, it is difficult to insert a small test piece having a shape different from that of the substrate in order to evaluate the grown thin film, because of handling, and a part of the substrate is used for inspection. Also, it is not preferable because it adversely affects other portions of the substrate and lowers the yield. Further, it is difficult to completely guarantee the quality of the film formation also in the sampling inspection, which leads to an increase in cost. Therefore, it is necessary to introduce a method for analyzing and evaluating a thin film on a substrate in a non-contact and non-destructive manner.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記バ
ッチ処理における従来例のように、テストピースに形成
された薄膜を分析評価することにより、基板の表面に形
成された薄膜を評価しようとする場合、この分析評価作
業に多大の労力とコスト、時間を要する。However, when the thin film formed on the test piece is to be evaluated by analyzing and evaluating the thin film formed on the test piece as in the conventional example in the above batch processing, This analysis and evaluation work requires a great deal of labor, cost and time.
【０００８】また、枚葉式処理のように抜取検査や非破
壊検査で薄膜を分析評価しようとすると、分析のために
多大の時間を要するばかりでなく、薄膜の品質保証を確
実に行うためのコストが膨大なものとなってしまうとい
った問題点があった。そのうえ、非破壊検査では、検査
できない評価もある。[0008] Further, when a thin film is analyzed and evaluated by a sampling inspection or a nondestructive inspection like a single-wafer processing, not only a large amount of time is required for the analysis, but also a quality assurance of the thin film is required. There was a problem that the cost would be enormous. In addition, some evaluations cannot be performed by nondestructive inspection.
【０００９】本発明は上記に鑑み、基板の表面に形成し
た薄膜の評価を、膜そのものを評価することなく、しか
も安価に迅速に行えるようにしたものを提供することを
目的とする。In view of the above, it is an object of the present invention to provide a thin film formed on the surface of a substrate which can be quickly and inexpensively evaluated without evaluating the film itself.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る薄膜評価方法は、薄膜成長室内に供給
ガスを導入して該薄膜成長室内に配置した基板の表面に
形成した薄膜を評価する薄膜評価方法において、前記薄
膜成長室から排気管を介して排出される排出ガスを前記
排気管において分析し、この分析結果を予め得た標準と
する薄膜を成長させた場合におけるガス分析データと比
較し、薄膜の品質保証評価を行うようにするか、また
は、薄膜成長室内に供給ガスを導入して該薄膜成長室内
に配置した基板の表面に形成した薄膜を評価する薄膜評
価方法において、前記薄膜成長室から排気管を介して排
出される排出ガスを前記排気管において分析し、この分
析結果を予め得た標準とする薄膜を成長させた場合にお
けるガス分析データと比較するとともに、薄膜成長室内
の基板温度、成長圧力、基板回転数あるいはガス流速の
薄膜成長条件の少なくとも一つをモニタし、このモニタ
結果を予め得た標準とする薄膜を成長させた場合におけ
るモニタデータと比較し、薄膜の品質保証評価を行うよ
うにするものである。In order to achieve the above object, a thin film evaluation method according to the present invention comprises introducing a supply gas into a thin film growth chamber to remove a thin film formed on the surface of a substrate disposed in the thin film growth chamber. In the thin film evaluation method to be evaluated, exhaust gas discharged from the thin film growth chamber through an exhaust pipe is analyzed in the exhaust pipe, and gas analysis data in the case where a thin film is grown on which the analysis result is obtained in advance as a standard In comparison with the thin film quality assurance evaluation, or in the thin film evaluation method to evaluate the thin film formed on the surface of the substrate placed in the thin film growth chamber by introducing a supply gas into the thin film growth chamber, Exhaust gas exhausted from the thin film growth chamber via an exhaust pipe is analyzed in the exhaust pipe, and gas analysis data obtained when a thin film as a standard obtained in advance is obtained. And monitor at least one of the thin film growth conditions of the substrate temperature, the growth pressure, the substrate rotation speed or the gas flow rate in the thin film growth chamber, and monitor the result when the thin film is grown using the monitoring result as a standard. The quality assurance of the thin film is compared with the data.
【００１１】[0011]
【作用】薄膜の成長においては、成長条件が同じ場合に
は装置としての再現性の範囲内で同じ薄膜が得られるは
ずであるが、実際の薄膜成長では、薄膜成長室内の種々
の条件や、供給するガスの条件が、各薄膜成長ごとに少
しずつ異なっていくために薄膜の品質にばらつきが生じ
る。本発明によれば、薄膜成長室から排出される排出ガ
スを分析するか、または前記薄膜成長室内に導入される
供給ガスまたは薄膜成長室から排出される排出ガスの少
なくとも一方の分析結果と、薄膜成長室内の半導体ウェ
ハの基板温度、成長圧力、基板回転数、ガス流量等の薄
膜成長条件の少なくとも一つのモニタ結果により、薄膜
成長室内で生じていることが一定の条件の範囲内である
か否かを確認し、これらの情報を総合的に判断して薄膜
の品質保証を行うことができる。特に基板回転数が大き
い場合（例えば５００ｒｐｍ以上）は、薄膜成長室内の
ガス流れが、基板回転により誘起され、成腺結果が、薄
膜成長室内における基板位置のズレ等の影響を受け難く
なり、成腺結果の再現性が著しく向上するため、この方
法が有効となる。In the growth of a thin film, if the growth conditions are the same, the same thin film should be obtained within the reproducibility of the apparatus. However, in actual thin film growth, various conditions in the thin film growth chamber, Since the conditions of the gas to be supplied are slightly different for each thin film growth, the quality of the thin film varies. According to the present invention, the analysis of the exhaust gas discharged from the thin film growth chamber, or the analysis result of at least one of the supply gas introduced into the thin film growth chamber or the exhaust gas discharged from the thin film growth chamber, According to at least one monitoring result of the thin film growth conditions such as the substrate temperature, the growth pressure, the substrate rotation speed, and the gas flow rate of the semiconductor wafer in the growth chamber, whether or not the occurrence in the thin film growth chamber is within a certain range of conditions. The quality of the thin film can be assured by comprehensively judging such information. In particular, when the substrate rotation speed is high (for example, 500 rpm or more), the gas flow in the thin film growth chamber is induced by the rotation of the substrate, and the results of the glands are less affected by the displacement of the substrate position in the thin film growth chamber. This method is effective because the reproducibility of gland results is significantly improved.
【００１２】[0012]
【実施例】以下、本発明の実施例を図面を参照して説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】図１は、本発明の実施に付する薄膜成長装
置の概要を示す概要図で、この薄膜成長装置には、気密
状態に保持された薄膜成長室１が備えられ、この薄膜成
長室１の内部には、基板２を載置する基板ホルダー３が
回転自在な回転軸４の上端に保持されて収納されてい
る。更に、前記基板ホルダー３の下方に位置して、基板
２及び基板ホルダー３を加熱するためのヒータ５が配置
されている。FIG. 1 is a schematic view showing an outline of a thin film growth apparatus for carrying out the present invention. This thin film growth apparatus is provided with a thin film growth chamber 1 held in an airtight state. Inside 1, a substrate holder 3 on which a substrate 2 is placed is held and held at an upper end of a rotatable rotating shaft 4. Further, a heater 5 for heating the substrate 2 and the substrate holder 3 is disposed below the substrate holder 3.
【００１４】一方、前記薄膜成長室１の上部とガス供給
装置６との間は、供給管７によって接続され、また薄膜
成長室１の下部と排気装置８との間は、排気管９によっ
て接続されている。On the other hand, an upper portion of the thin film growth chamber 1 and the gas supply device 6 are connected by a supply pipe 7, and a lower portion of the thin film growth chamber 1 and an exhaust device 8 are connected by an exhaust pipe 9. Have been.
【００１５】これにより、基板ホルダー３の上面に基板
２を載置するとともに、この基板２をヒータ５により所
定温度（数百℃〜千数百℃）まで昇温させ、ガス供給装
置６により薄膜成長室１内に原料ガス（例えばＡｓＨ3
，ＳｉＨ4 ，ＳｉＨ2 等）をキャリアガス（例えばＨ2
等）とともに導入して、基板２の上に薄膜を成長させ
る。シリコン膜を成長させる場合には原料ガスとして、
ＳｉＨ2 Ｃｌ2 ，ＳｉＨ4 ，Ｓｉ2 Ｈ6 等のガスを用い
る。キャリアガスとしてはＨ2 等を用いるが、キャリア
ガスは使用しなくともよい。ドンピングする場合はＰＨ
3 ，Ｂ2 Ｈ6 等のガスを用いる。薄膜は、シリコン膜に
限らず、他の半導体膜、絶縁膜、金属膜、電体膜等他の
膜でもよい。この時、回転軸４を回転（例えば５００ｒ
ｐｍ以上）させることにより基板ホルダー３、ひいては
基板２を回転させるとともに、排気装置８により装置な
いの圧力が一定になるように（例えば数〜数百Ｔｏ
ｎ．）排気する。Thus, the substrate 2 is placed on the upper surface of the substrate holder 3, the temperature of the substrate 2 is raised to a predetermined temperature (several hundred degrees C. to several hundreds degrees C.) by the heater 5, and the thin film is A source gas (for example, AsH3
, SiH4, SiH2, etc.) into a carrier gas (eg, H2
) To grow a thin film on the substrate 2. When growing a silicon film,
Gases such as SiH2 Cl2, SiH4 and Si2 H6 are used. Although H2 or the like is used as the carrier gas, the carrier gas need not be used. PH for donping
3, a gas such as B2H6 is used. The thin film is not limited to the silicon film, and may be another film such as another semiconductor film, an insulating film, a metal film, an electric conductor film, or the like. At this time, the rotation shaft 4 is rotated (for example, 500 r
pm or more) to rotate the substrate holder 3 and thus the substrate 2, and to make the pressure of the device constant by the exhaust device 8 (for example, several to several hundred To
n. ) Exhaust.
【００１６】更に、前記供給管７の途中には、供給ガス
分析装置１０が、排気管９の途中には排気ガス分析装置
１１が夫々介装されているとともに、薄膜成長室１内の
圧力をモニタする圧力計１２、半導体ウェハ２の基板温
度をモニタする放射温度計１３及び回転軸４の回転数を
モニタする回転計１４が夫々備えられ、これらの各機器
１０〜１４は、記録・分析・判断手段１５に接続されて
いる。Further, a supply gas analyzer 10 is provided in the middle of the supply pipe 7, and an exhaust gas analyzer 11 is provided in the middle of the exhaust pipe 9. A pressure gauge 12 for monitoring, a radiation thermometer 13 for monitoring the substrate temperature of the semiconductor wafer 2, and a tachometer 14 for monitoring the number of rotations of the rotating shaft 4 are respectively provided. It is connected to the judgment means 15.
【００１７】前記供給ガス分析装置１０は、ガス供給装
置６から供給される供給ガスを分析するため、供給管７
から供給ガスをサンプリングして、例えはＦＴＩＲ（フ
ーリエ変換赤外分光法）によりガス分析を行うものであ
る。このガス分析は、ガスクロマトグラフィーやＱＭＳ
（四重極マススペクトル）等の他の分析手段を用いるこ
ともできる。また、分析は、ガスをサンプリングせず、
配管に流れているものをその場分析してもよい。The supply gas analyzer 10 analyzes a supply gas supplied from the gas supply device 6 to supply a gas to the supply pipe 7.
FTIR (Fourier Transform Infrared Spectroscopy), for example, to sample the supplied gas from the sampler. This gas analysis is performed by gas chromatography or QMS
Other analysis means such as (quadrupole mass spectrum) can also be used. Also, the analysis does not sample gas,
What is flowing in the pipe may be analyzed in situ.
【００１８】また、排気ガス分析装置１１は、排気装置
８に排気される排気ガスを分析するため、排気管９から
の排気ガスをサンプリングして、例えはＦＴＩＲ（フー
リエ変換赤外分光法）によりガス分析を行うものであ
る。このガス分析として、他の手段を用いることもでき
ることは、上記の通りである。The exhaust gas analyzer 11 samples the exhaust gas from the exhaust pipe 9 in order to analyze the exhaust gas exhausted to the exhaust device 8, for example, by FTIR (Fourier transform infrared spectroscopy). It performs gas analysis. As described above, other means can be used for this gas analysis.
【００１９】前記記録・分析・判断手段１５には、基板
２の基板温度、薄膜成長室１内の成長圧力、回転軸４の
回転数、及びガス流量等の各設定値等が情報として与え
られているとともに、標準とする薄膜を成長した際に予
め分析して得られたガス分析結果が標準情報として与え
られている。The recording / analysis / judgment means 15 is provided with information such as the substrate temperature of the substrate 2, the growth pressure in the thin film growth chamber 1, the number of rotations of the rotating shaft 4, the gas flow rate, etc., as information. In addition, a gas analysis result obtained by preliminarily analyzing a thin film as a standard when the thin film is grown is provided as standard information.
【００２０】そして、この記録・分析・判断装置１５に
は、上記各機器１０〜１４からの各情報が入力され、予
め与えられている各対応した情報と比較することによっ
て、基板２の表面に形成された薄膜の評価が行われる。The recording / analysis / judgment device 15 receives the information from the devices 10 to 14 and compares the information with the corresponding information provided in advance. Evaluation of the formed thin film is performed.
【００２１】即ち、薄膜の成長においては、成長条件が
同じ場合には装置としての再現性の範囲内で同じ薄膜が
得られるはずである。成長条件は薄膜成長前に設定され
ており、通常は設定された通りの薄膜成長が行われる。
しかし、実際の薄膜成長では、薄膜成長室１内の条件が
各薄膜成長ごとに少しずつ異なっていくために薄膜の品
質にばらつきが生じる。That is, in the growth of a thin film, when the growth conditions are the same, the same thin film should be obtained within the reproducibility of the apparatus. The growth conditions are set before the thin film is grown, and the thin film is normally grown as set.
However, in actual thin film growth, the quality of the thin film varies because the conditions in the thin film growth chamber 1 are slightly different for each thin film growth.
【００２２】そこで、薄膜成長において膜の品質に大き
な影響を与える供給ガス組成、基板温度、成長圧力、基
板の回転数、ガス流量をモニタし、かつ薄膜成長室１か
ら排気される排気ガス組成をモニタすることにより、薄
膜成長室１内で生じていることが一定の条件の範囲内に
あるか否かを確認し、これらの情報を総合的に判断する
ことにより薄膜の品質保証を行うようなされている。Therefore, the composition of the supply gas, the substrate temperature, the growth pressure, the number of rotations of the substrate and the gas flow rate, which greatly affect the quality of the film in the thin film growth, are monitored, and the composition of the exhaust gas exhausted from the thin film growth chamber 1 is monitored. By monitoring, it is confirmed whether or not the occurrence in the thin film growth chamber 1 is within a certain range of conditions, and the quality of the thin film is assured by comprehensively judging such information. ing.
【００２３】具体的には、成長した膜が規格の中に入っ
ているかどうかは、第１に成長時の基板温度、成長圧力
及び基板の回転数のモニタ結果が許容される設定値から
の偏差内に入っているかで判断される。次いで、ガス分
析の結果が標準値とと比較される。この比較は、先ず薄
膜成長室１内に導入される原料ガスの濃度、供給時間が
許容値内であるかどうかが判断され、その後、排気ガス
中の原料ガスの減少量、生成ガス量が標準値内に入って
いるかどうかが判断される。これらの分析結果により、
生成した膜の品質保証が可能となる。More specifically, whether the grown film is within the standard is determined by first determining a deviation from a set value at which the monitoring result of the substrate temperature, the growth pressure and the number of rotations of the substrate during the growth is allowed. It is judged by whether you are inside. The results of the gas analysis are then compared with a standard value. In this comparison, it is first determined whether the concentration of the source gas introduced into the thin film growth chamber 1 and whether the supply time is within an allowable value, and thereafter, the reduction amount of the source gas in the exhaust gas and the generated gas amount are standard. It is determined whether it is within the value. From these analysis results,
The quality of the formed film can be guaranteed.
【００２４】なお、これらのモニタ、ガス分析のうち、
膜成長条件によって品質保証に必要とされないものは測
定しなくても良い。Incidentally, of these monitors and gas analysis,
Those not required for quality assurance depending on film growth conditions need not be measured.
【００２５】例えば、供給ガス組成、基板の基板温度、
成長圧力及び基板の回転数、ガス流量は通常標準値とそ
れ程の差がないので、排気ガスのみを分析することによ
って、薄膜の評価の簡略化を図ることができる。また、
薄膜成長装置の中には、基板を回転させないものもある
ので、このようなタイプにあっては、基板の回転数をモ
ニタする必要はない。For example, supply gas composition, substrate temperature of the substrate,
Since the growth pressure, the number of rotations of the substrate, and the gas flow rate do not usually differ from the standard values, the evaluation of the thin film can be simplified by analyzing only the exhaust gas. Also,
Since some thin film growth apparatuses do not rotate the substrate, it is not necessary to monitor the number of rotations of the substrate in such a type.
【００２６】更に、薄膜の合否の判断は、各測定結果の
記録を人間が見て行うようにすることもできる。Further, the judgment of the pass / fail of the thin film can be made by a person watching the recording of each measurement result.
【００２７】[0027]
【発明の効果】以上説明したように本発明によれば、基
板の表面に形成した薄膜の評価を、膜そのものを評価す
ることなく簡便にかつ基板に接触することなく迅速に、
しかも安価に行うことができるといった効果がある。As described above, according to the present invention, a thin film formed on the surface of a substrate can be easily and quickly evaluated without evaluating the film itself and without contacting the substrate.
In addition, there is an effect that it can be performed at low cost.
【図１】本発明の実施に付する薄膜成長装置の一例を示
す概要図。FIG. 1 is a schematic diagram showing an example of a thin film growth apparatus according to an embodiment of the present invention.
１ 薄膜成長装置 ２ 基板 ３ 基板ホルダー １０ 供給ガス分析装置 １１ 排気ガス分析装置 １２ 圧力計 １３ 放射温度計 １４ 回転計 １５ 記録・分析・判断装置 DESCRIPTION OF SYMBOLS 1 Thin film growth apparatus 2 Substrate 3 Substrate holder 10 Supply gas analyzer 11 Exhaust gas analyzer 12 Pressure gauge 13 Radiation thermometer 14 Tachometer 15 Recording / analysis / judgment apparatus
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 ──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. 7 , DB name) H01L 21/205
Claims (2)
成長室内に配置した基板の表面に形成した薄膜を評価す
る薄膜評価方法において、前記薄膜成長室から排気管を
介して排出される排出ガスを前記排気管において分析
し、この分析結果を予め得た標準とする薄膜を成長させ
た場合におけるガス分析データと比較し、薄膜の品質保
証評価を行うことを特徴とする薄膜評価方法。1. A thin film evaluation method for evaluating a thin film formed on a surface of a substrate disposed in the thin film growth chamber by introducing the feed gas into the thin film growth chamber, an exhaust pipe from the thin film growth chamber
The exhaust gas discharged through the exhaust pipe is analyzed in the exhaust pipe, and the analysis result is used to grow a thin film as a standard obtained in advance.
The quality of the thin film by comparing
A thin film evaluation method characterized by performing a test evaluation.
成長室内に配置した基板の表面に形成した薄膜を評価す
る薄膜評価方法において、前記薄膜成長室から排気管を
介して排出される排出ガスを前記排気管において分析
し、この分析結果を予め得た標準とする薄膜を成長させ
た場合におけるガス分析データと比較するとともに、薄
膜成長室内の基板温度、成長圧力、基板回転数あるいは
ガス流速の薄膜成長条件の少なくとも一つをモニタし、
このモニタ結果を予め得た標準とする薄膜を成長させた
場合におけるモニタデータと比較し、薄膜の品質保証評
価を行う半導体ウェハの薄膜評価方法。2. A thin film evaluation method for evaluating a thin film formed on a surface of a substrate disposed in the thin film growth chamber by introducing the feed gas into the thin film growth chamber, an exhaust pipe from the thin film growth chamber
Analysis of the exhaust gas discharged through the exhaust pipe
Then, a thin film was grown by using this analysis result as a standard.
In addition to comparing with the gas analysis data in the case of, the substrate temperature in the thin film growth chamber, the growth pressure, monitor at least one of the thin film growth conditions of the substrate rotation speed or the gas flow rate ,
A thin film was grown with this monitoring result as a standard obtained in advance.
A thin-film evaluation method for a semiconductor wafer, which performs a quality assurance evaluation of a thin film in comparison with monitor data in a case .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04071439A JP3105063B2 (en) | 1992-03-27 | 1992-03-27 | Thin film evaluation method |
| US08/036,894 US5766360A (en) | 1992-03-27 | 1993-03-25 | Substrate processing apparatus and substrate processing method |
| GB9306341A GB2265634B (en) | 1992-03-27 | 1993-03-26 | Substrate processing apparatus and substrate processing method |
| US09/055,996 US5897710A (en) | 1992-03-27 | 1998-04-07 | Substrate processing apparatus and substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04071439A JP3105063B2 (en) | 1992-03-27 | 1992-03-27 | Thin film evaluation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05275352A JPH05275352A (en) | 1993-10-22 |
| JP3105063B2 true JP3105063B2 (en) | 2000-10-30 |
Family
ID=13460579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04071439A Expired - Fee Related JP3105063B2 (en) | 1992-03-27 | 1992-03-27 | Thin film evaluation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3105063B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4387573B2 (en) | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | Process exhaust gas monitoring apparatus and method, semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus management system and method |
| FR2808098B1 (en) * | 2000-04-20 | 2002-07-19 | Cit Alcatel | METHOD AND DEVICE FOR CONDITIONING THE ATMOSPHERE IN A PROCESS CHAMBER |
-
1992
- 1992-03-27 JP JP04071439A patent/JP3105063B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05275352A (en) | 1993-10-22 |
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