JP3101190B2 - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JP3101190B2 JP3101190B2 JP07248102A JP24810295A JP3101190B2 JP 3101190 B2 JP3101190 B2 JP 3101190B2 JP 07248102 A JP07248102 A JP 07248102A JP 24810295 A JP24810295 A JP 24810295A JP 3101190 B2 JP3101190 B2 JP 3101190B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- thermopile
- portions
- infrared
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、サーモパイルを用
いた赤外線検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector using a thermopile.
【０００２】[0002]
【従来の技術】従来より、図６に示すような構造の、サ
ーモパイルを用いた赤外線検出装置が知られている。こ
のような赤外線検出装置は、半導体基板７と、半導体基
板７の上面に形成された薄膜８と、半導体基板７を貫通
して設けられた凹部９と、薄膜８上に形成されたゼーベ
ック効果を有する第１及び第２の金属１，２と、凹部９
の外側の薄膜８の上面に設けられた温度補償用のダイオ
ード１５とから構成されている。2. Description of the Related Art An infrared detector using a thermopile having a structure as shown in FIG. 6 is conventionally known. Such an infrared detecting device includes a semiconductor substrate 7, a thin film 8 formed on the upper surface of the semiconductor substrate 7, a concave portion 9 provided through the semiconductor substrate 7, and a Seebeck effect formed on the thin film 8. Having first and second metals 1 and 2 and recess 9
And a temperature-compensating diode 15 provided on the upper surface of the thin film 8 on the outside.
【０００３】ここで、第１の金属１の一端は、凹部９上
方の薄膜８上に形成された温接点３で、第１の金属１と
平行に形成された第２の金属２に接続され、その他端
は、凹部９の外側の薄膜８上に形成された冷接点４で、
同じく第１の金属１と平行に形成された別の第２の金属
２に接続されている。而して、複数個の第１及び第２の
金属１，２は、Ｓ字状に蛇行するように、互い違いに直
列に接続され、サーモパイルが形成されている。また、
直列に接続された複数個の第１及び第２の金属１，２の
両端は、配線５を介して端子６に接続されている。Here, one end of the first metal 1 is connected to a second metal 2 formed in parallel with the first metal 1 by a hot junction 3 formed on the thin film 8 above the concave portion 9. And the other end is a cold junction 4 formed on the thin film 8 outside the recess 9,
It is also connected to another second metal 2 which is also formed in parallel with the first metal 1. Thus, the plurality of first and second metals 1 and 2 are alternately connected in series so as to meander in an S-shape to form a thermopile. Also,
Both ends of the plurality of first and second metals 1 and 2 connected in series are connected to a terminal 6 via a wiring 5.
【０００４】この時、薄膜８が被測定物から赤外線を受
光すると、受光した赤外線量に比例して凹部９上方の薄
膜８上に形成された温接点３の温度が上昇する。一方、
熱的に安定な凹部９以外の薄膜８上に形成された冷接点
４の温度は変動しないので、温接点３と冷接点４との間
に温度差が発生し、複数個の第１及び第２の金属１，２
間に、この温度差に比例した熱起電力が発生する。而し
て、この熱起電力の総和がサーモパイルの出力電圧とし
て出力される。At this time, when the thin film 8 receives infrared light from the object to be measured, the temperature of the hot junction 3 formed on the thin film 8 above the concave portion 9 increases in proportion to the amount of received infrared light. on the other hand,
Since the temperature of the cold junction 4 formed on the thin film 8 other than the thermally stable concave portion 9 does not fluctuate, a temperature difference occurs between the hot junction 3 and the cold junction 4, and a plurality of first and second cold junctions are formed. Metal 2
During that time, a thermoelectromotive force proportional to this temperature difference is generated. Thus, the sum of the thermoelectromotive forces is output as the output voltage of the thermopile.
【０００５】ところで、薄膜８が被測定物から受光した
赤外線量は、被測定物の絶対温度と薄膜８の絶対温度と
の４乗の差に比例するので、被測定物の赤外線放射量を
検出するためには、基準温度となる凹部９以外の薄膜８
の温度を検出する必要がある。従って、サーモパイルの
出力電圧と、ダイオード１５の順方向電圧の温度特性か
ら検出した凹部９以外の薄膜８の温度とから、被測定物
の赤外線放射量を計測していた。Since the amount of infrared light received by the thin film 8 from the object to be measured is proportional to the fourth power of the absolute temperature of the object to be measured and the absolute temperature of the thin film 8, the amount of infrared radiation from the object to be measured is detected. To do so, the thin film 8 other than the concave portion 9 at which the reference temperature is reached
Temperature needs to be detected. Therefore, the infrared radiation amount of the object to be measured is measured from the output voltage of the thermopile and the temperature of the thin film 8 other than the concave portion 9 detected from the temperature characteristics of the forward voltage of the diode 15.
【０００６】[0006]
【発明が解決しようとする課題】上記構成の赤外線検出
装置では、薄膜上に形成された複数個の第１及び第２の
金属からなるサーモパイルが、被測定物から赤外線を受
光していない場合でも、被測定物以外から受光する赤外
線によって、凹部上方の薄膜の温度が上昇し、凹部上方
の薄膜と凹部以外の薄膜との間に僅かな温度差が発生
し、この温度差によってサーモパイルにオフセット電圧
が発生するという問題点があった。In the infrared detecting device having the above-mentioned structure, even when the thermopile formed of a plurality of first and second metals formed on the thin film does not receive infrared light from the object to be measured. The temperature of the thin film above the concave portion rises due to infrared light received from other than the object to be measured, and a slight temperature difference is generated between the thin film above the concave portion and the thin film other than the concave portion. There is a problem that occurs.
【０００７】本発明は上記問題点に鑑みて為されたもの
であり、サーモパイルのオフセット電圧を低減させた赤
外線検出装置を提供することを目的とするものである。The present invention has been made in view of the above problems, and has as its object to provide an infrared detecting device in which the offset voltage of a thermopile is reduced.
【０００８】[0008]
【課題を解決するための手段】本発明では、上記目的を
達成するために、請求項１の発明は、半導体基板の上面
に形成された薄膜と、半導体基板の異なる部位を夫々貫
通して設けられた第１及び第２の凹部と、薄膜の一部を
構成し夫々第１及び第２の凹部の天井部をなし互いに熱
的に絶縁された第１及び第２の薄膜部と、薄膜上に熱電
対がアレイ状に直列に形成されたサーモパイルと、第１
の薄膜部上に形成されたサーモパイルの温接点と、第２
の薄膜部上に形成されたサーモパイルの冷接点とを備え
ており、サーモパイルの温接点と冷接点が共に熱容量の
等しい薄膜部上に形成されているので、被測定物から赤
外線を受光していない場合、温接点と冷接点の温度は同
じ温度になり、熱起電力が発生せず、オフセット電圧が
出力されない。According to the present invention, in order to achieve the above object, the present invention is directed to a thin film formed on an upper surface of a semiconductor substrate and a thin film formed on different portions of the semiconductor substrate.
The first and second concave portions provided through the first and second concave portions constitute a part of the thin film and form the ceiling portions of the first and second concave portions and are thermally insulated from each other. A thermopile in which thermocouples are formed in series in an array on a thin film;
A thermopile hot junction formed on the thin film portion of
The thermopile cold junction is formed on the thin film part of the thermopile, and the hot junction and the cold junction of the thermopile are both formed on the thin film part having the same heat capacity, so that no infrared light is received from the object to be measured. In this case, the temperature of the hot junction and the temperature of the cold junction are the same, no thermoelectromotive force is generated, and no offset voltage is output.
【０００９】請求項２の発明は、半導体基板の上面に形
成された薄膜と、半導体基板の異なる部位を夫々貫通し
て設けられた第１及び第２の凹部と、薄膜の一部を構成
し夫々第１及び第２の凹部の天井部をなし互いに熱的に
絶縁された第１及び第２の薄膜部と、薄膜上に夫々熱電
対がアレイ状に直列に形成され互いに逆極性に接続され
た第１及び第２のサーモパイルと、第１の薄膜部上に形
成された第１のサーモパイルの冷接点と、第２の薄膜部
上に形成された第２のサーモパイルの温接点と、第１及
び第２の薄膜部以外の薄膜上に形成された第１のサーモ
パイルの温接点及び第２のサーモパイルの冷接点とを備
えており、薄膜部が被測定物から赤外線を受光していな
い場合、第１及び第２のサーモパイルが逆極性で接続さ
れているので、第１及び第２のサーモパイルに発生する
熱起電力は相殺され、オフセット電圧が出力されない。According to a second aspect of the present invention, a thin film formed on an upper surface of a semiconductor substrate and a thin film formed on a different portion of the semiconductor substrate are respectively penetrated.
First and second recessed portions provided, and first and second thin film portions which constitute a part of the thin film, form ceiling portions of the first and second recessed portions, and are thermally insulated from each other, First and second thermopiles in which thermocouples are respectively formed in series in an array on the thin film and connected in opposite polarities; a cold junction of the first thermopile formed on the first thin film portion; A second thermopile hot junction formed on the second thin film portion, a first thermopile hot junction and a second thermopile cold junction formed on the thin film other than the first and second thin film portions. When the thin film portion does not receive infrared rays from the object to be measured, the first and second thermopiles are connected with opposite polarities, so that the thermoelectromotive force generated in the first and second thermopiles is provided. Are offset, and no offset voltage is output.
【００１０】請求項３の発明は、請求項１又は２の発明
に於いて、第１及び第２の薄膜部が被測定物から受光す
る赤外線を交互に周期的に遮断する遮光手段を備えてい
るので、サーモパイルの出力信号は交流信号となり、フ
ィルタ等を用いて、サーモパイルの出力信号に含まれる
ノイズ成分やオフセット電圧を容易に除去できる。請求
項４の発明は、請求項１又は２の発明において、第１及
び第２の薄膜部が夫々異なる第１及び第２の被測定物か
ら赤外線を受光するための光学系レンズ等の集光手段を
備えているので、サーモパイルの出力信号から第１及び
第２の被測定物の赤外線量の差を非接触で検出できる。
ここで、集光手段が第１及び第２の薄膜部に夫々異なる
第１及び第２の被測定物から赤外線を受光させるとは、
集光手段が第１の被測定物からの赤外線を第１の薄膜部
にのみ受光させ、第２の被測定物からの赤外線を第２の
薄膜部にのみ受光させている状態をいう。According to a third aspect of the present invention, in the first or second aspect, the first and second thin film portions are provided with light blocking means for alternately and periodically blocking infrared rays received from the object to be measured. Therefore, the output signal of the thermopile is an AC signal, and a noise component and an offset voltage included in the output signal of the thermopile can be easily removed using a filter or the like. According to a fourth aspect of the present invention, in the first or second aspect of the present invention, the first and second thin film portions collect light such as an optical system lens for receiving infrared rays from the first and second objects to be measured, which are different from each other. Since the means is provided, the difference between the infrared ray amounts of the first and second objects can be detected in a non-contact manner from the output signal of the thermopile.
Here, the condensing means causes the first and second thin film portions to receive infrared rays from different first and second objects to be measured, respectively.
This refers to a state in which the light condensing means causes only the first thin film portion to receive infrared light from the first DUT, and allows only the second thin film portion to receive infrared light from the second DUT.
【００１１】[0011]
【発明の実施の形態】本発明の実施の形態を図面を参照
して説明する。 （実施形態１）本実施形態の赤外線検出装置の構造を図
１に示す。このような赤外線検出装置は、半導体基板７
と、半導体基板７上に形成された薄膜８と、半導体基板
７を貫通して設けられた第１及び第２の凹部９ａ，９ｂ
と、薄膜８の一部を構成し夫々第１及び第２の凹部９
ａ，９ｂの天井部をなす第１及び第２の薄膜部８ａ，８
ｂと、薄膜８上に形成されたゼーベック効果を有する第
１及び第２の金属１，２とから構成されている。Embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) FIG. 1 shows the structure of an infrared detecting device of the present embodiment. Such an infrared detecting device is a semiconductor substrate 7
And a thin film 8 formed on the semiconductor substrate 7, and first and second recesses 9 a and 9 b provided through the semiconductor substrate 7.
And a first and a second concave portion 9 which respectively constitute a part of the thin film 8 and
a and 9b, the first and second thin film portions 8a and 8 forming the ceiling portion
b and the first and second metals 1 and 2 having the Seebeck effect and formed on the thin film 8.
【００１２】ここで、第１の金属１の一端は、第１の薄
膜部８ａ上の温接点３で、第１の金属１と平行に形成さ
れた第２の金属２に接続され、その他端は、第２の薄膜
部８ｂ上の冷接点４で、同様に第１の金属１と平行に形
成された別の第２の金属２に接続されている。而して、
複数個の第１及び第２の金属１，２は、Ｓ字状に蛇行す
るように、互い違いに直列に接続されており、サーモパ
イル１０が形成されている。また、複数個の直列接続さ
れた第１及び第２の金属１，２の両端は、配線５を介し
て、端子６に接続されている。Here, one end of the first metal 1 is connected to the second metal 2 formed in parallel with the first metal 1 at the hot junction 3 on the first thin film portion 8a, and the other end. Is a cold junction 4 on the second thin film portion 8b, and is connected to another second metal 2 similarly formed in parallel with the first metal 1. Thus,
The plurality of first and second metals 1 and 2 are alternately connected in series so as to meander in an S shape, and a thermopile 10 is formed. Both ends of the plurality of first and second metals 1 and 2 connected in series are connected to a terminal 6 via a wiring 5.
【００１３】この時、第１及び第２の薄膜部８ａ，８ｂ
が赤外線を受光すると、第１及び第２の薄膜部８ａ，８
ｂの温度は受光した赤外線量に比例して上昇する。従っ
て、複数個の第１及び第２の金属１，２の各接合では、
ゼーベック効果により第１の薄膜部８ａと第２の薄膜部
８ｂとの温度差に比例した熱起電力が発生し、その熱起
電力の総和がサーモパイル１０の出力電圧となる。ここ
で、第１及び第２の薄膜部８ａ，８ｂの熱容量は等しい
ので、両者の温度差は受光した赤外線量の差に比例す
る。よって、サーモパイル１０の出力電圧から、第１及
び第２の薄膜部８ａ，８ｂが受光した赤外線量の差を検
出できる。At this time, the first and second thin film portions 8a, 8b
Receives infrared rays, the first and second thin film portions 8a, 8a
The temperature of b rises in proportion to the amount of infrared light received. Therefore, in each joining of the plurality of first and second metals 1 and 2,
Due to the Seebeck effect, a thermoelectromotive force proportional to the temperature difference between the first thin film portion 8a and the second thin film portion 8b is generated, and the sum of the thermoelectromotive forces becomes the output voltage of the thermopile 10. Here, since the heat capacity of the first and second thin film portions 8a and 8b is equal, the temperature difference between them is proportional to the difference in the amount of received infrared light. Therefore, from the output voltage of the thermopile 10, the difference between the amounts of infrared rays received by the first and second thin film portions 8a and 8b can be detected.
【００１４】一方、第１の薄膜部８ａと第２の薄膜部８
ｂが被測定物から赤外線を受光していない場合、第１及
び第２の薄膜部８ａ，８ｂの熱容量は等しいので、第１
及び第２の薄膜部８ａ，８ｂの温度は等しくなる。従っ
て、第１の薄膜部８ａ上に設けられた温接点３と第２の
薄膜部８ｂ上に設けられた冷接点４の温度差が発生しな
いので、第１及び第２の金属１，２の各接合では熱起電
力が発生せず、サーモパイル１０のオフセット電圧は発
生しない。On the other hand, the first thin film portion 8a and the second thin film portion 8
When b does not receive infrared light from the object to be measured, the first and second thin film portions 8a and 8b have the same heat capacity.
And the temperatures of the second thin film portions 8a and 8b become equal. Therefore, there is no temperature difference between the hot junction 3 provided on the first thin film portion 8a and the cold junction 4 provided on the second thin film portion 8b. No thermoelectromotive force is generated at each junction, and no offset voltage of the thermopile 10 is generated.
【００１５】尚、本実施形態では、薄膜８上にゼーベッ
ク効果を有する２種の金属の接合を形成しているが、複
数個のＰＮ接合を直列に形成してもよい。 （実施形態２）本実施形態の赤外線検出装置の構成を図
２に示す。この赤外線検出装置は、半導体基板７と、半
導体基板７上に形成された薄膜８と、半導体基板７を貫
通して設けられた第１及び第２の凹部９ａ，９ｂと、薄
膜８の一部を構成して夫々第１及び第２の凹部９ａ，９
ｂの天井部をなす第１及び第２の薄膜部８ａ，８ｂと、
第１及び第２の薄膜部８ａ，８ｂ上に夫々形成されたゼ
ーベック効果を有する第１及び第２の金属１，２からな
る第１及び第２のサーモパイル１０ａ，１０ｂとから構
成されている。In this embodiment, a junction between two metals having a Seebeck effect is formed on the thin film 8, but a plurality of PN junctions may be formed in series. (Embodiment 2) FIG. 2 shows the configuration of an infrared detection device of this embodiment. This infrared detecting device includes a semiconductor substrate 7, a thin film 8 formed on the semiconductor substrate 7, first and second concave portions 9a and 9b provided through the semiconductor substrate 7, and a part of the thin film 8. And the first and second concave portions 9a, 9a respectively.
b, the first and second thin film portions 8a and 8b forming the ceiling portion of b.
The first and second thermopiles 10a and 10b made of the first and second metals 1 and 2 having the Seebeck effect are formed on the first and second thin film portions 8a and 8b, respectively.
【００１６】ここで、第１の薄膜部８ａ上に形成された
第１の金属１の一端は、第１の薄膜部８ａ上に形成され
た第１の温接点３ａで第２の金属２に接続されており、
その他端は、第１及び第２の薄膜部８ａ，８ｂ以外の薄
膜８上に形成された第１の冷接点４ａで別の第２の金属
２に接続されている。而して、ｎ個の第１及び第２の金
属１，２が、Ｓ字状に蛇行するように、互い違いに直列
に接続され、第１のサーモパイル１０ａが形成されてい
る。同様にして、第２の薄膜部８ｂ上に形成された第１
の金属１の一端は、第１及び第２の薄膜部８ａ，８ｂ以
外の薄膜８上に形成された第２の温接点３ｂで第２の金
属２に接続されており、その他端は、第２の薄膜部８ｂ
上に形成された第２の冷接点４ｂで別の第２の金属２と
接続されている。而して、ｎ個の第１及び第２の金属
１，２が、Ｓ字状に蛇行するように、互い違いに直列に
接続されており、第２のサーモパイル１０ｂが形成され
ている。Here, one end of the first metal 1 formed on the first thin film portion 8a is connected to the second metal 2 by the first hot junction 3a formed on the first thin film portion 8a. Connected
The other end is connected to another second metal 2 by a first cold junction 4a formed on the thin film 8 other than the first and second thin film portions 8a and 8b. Thus, the n first and second metals 1 and 2 are alternately connected in series so as to meander in an S-shape to form the first thermopile 10a. Similarly, the first thin film portion 8b formed on the second thin film portion 8b
One end of the metal 1 is connected to the second metal 2 by a second hot junction 3b formed on the thin film 8 other than the first and second thin film portions 8a and 8b, and the other end is 2 thin film part 8b
It is connected to another second metal 2 by a second cold junction 4b formed above. Thus, the n first and second metals 1 and 2 are alternately connected in series so as to meander in an S-shape, and the second thermopile 10b is formed.
【００１７】この時、第１及び第２のサーモパイル１０
ａ，１０ｂは、それぞれ、ｎ個の第１及び第２の金属
１，２から形成されており、第１のサーモパイル１０ａ
の一端に位置する第１の金属１と、第２のサーモパイル
１０ｂの一端に位置する第２の金属２とが接続されてい
る。而して、第１及び第２のサーモパイル１０ａ，１０
ｂは互いに極性が逆となるように接続されている。At this time, the first and second thermopiles 10
a and 10b are formed of n first and second metals 1 and 2, respectively, and the first thermopile 10a
Is connected to the first metal 1 located at one end of the second thermopile 10b and the second metal 2 located at one end of the second thermopile 10b. Thus, the first and second thermopiles 10a, 10a
b are connected so that their polarities are opposite to each other.
【００１８】さて、第１及び第２の薄膜部８ａ，８ｂが
受光する赤外線の赤外線量に差がある場合、第１及び第
２のサーモパイル１０ａ，１０ｂは、それぞれ、第１及
び第２の薄膜部８ａ，８ｂが受光した赤外線量に比例し
た熱起電力を発生する。ここで、第１のサーモパイル１
０ａと第２のサーモパイル１０ｂは極性が逆になるよう
に接続されているので、本実施形態の赤外線検出装置
は、第１の薄膜部８ａと第２の薄膜部８ｂが夫々受光し
た赤外線量の差に比例した信号を出力する。If there is a difference in the amount of infrared light received by the first and second thin film portions 8a and 8b, the first and second thermopiles 10a and 10b are connected to the first and second thin films, respectively. The portions 8a and 8b generate a thermoelectromotive force proportional to the amount of infrared light received. Here, the first thermopile 1
0a and the second thermopile 10b are connected so that the polarities are opposite, so that the infrared detecting device of the present embodiment has the amount of infrared light received by the first thin film portion 8a and the second thin film portion 8b, respectively. Outputs a signal proportional to the difference.
【００１９】一方、第１及び第２の薄膜部８ａ，８ｂが
被測定物からの赤外線を受光していない場合、第１及び
第２の薄膜部８ａ，８ｂが受光する赤外線量は等しくな
る。ここで、第１及び第２の薄膜部８ａ，８ｂの熱容量
は等しいので、両者の温度は等しくなり、第１のサーモ
パイル１０ａと第２のサーモパイル１０ｂに発生する熱
起電力は、大きさが等しく、極性が逆となる。従って、
第１及び第２のサーモパイル１０ａ，１０ｂに発生した
熱起電力が相殺されて、オフセット電圧が発生しない。On the other hand, when the first and second thin film portions 8a and 8b do not receive infrared light from the object to be measured, the amount of infrared light received by the first and second thin film portions 8a and 8b becomes equal. Here, since the heat capacities of the first and second thin film portions 8a and 8b are equal, the temperatures of both are equal, and the thermoelectromotive forces generated in the first thermopile 10a and the second thermopile 10b are equal in magnitude. , The polarity is reversed. Therefore,
The thermoelectromotive force generated in the first and second thermopiles 10a and 10b is canceled, and no offset voltage is generated.
【００２０】また、第１の薄膜部８ａ上に第１のサーモ
パイル１０ａの温接点３ａを形成し、第２の薄膜部８ｂ
上に第２のサーモパイル１０ｂの冷接点４ｂを形成する
とともに、第１及び第２の薄膜部８ａ，８ｂ以外の薄膜
８上に第１のサーモパイル１０ａの冷接点４ａと第２の
サーモパイル１０ｂの温接点３ｂとを形成することによ
り、第１及び第２の薄膜部８ａ，８ｂが夫々受光した赤
外線量の差を、熱的に安定な第１及び第２の薄膜部８
ａ，８ｂ以外の薄膜８の温度を基準として検出している
ので、赤外線検出装置の出力信号の安定性を高め、精度
を向上させることができる。Further, the hot junction 3a of the first thermopile 10a is formed on the first thin film portion 8a, and the second thin film portion 8b
The cold junction 4b of the second thermopile 10b is formed thereon, and the cold junction 4a of the first thermopile 10a and the temperature of the second thermopile 10b are formed on the thin film 8 other than the first and second thin film portions 8a and 8b. By forming the contact 3b, the difference between the amounts of infrared rays received by the first and second thin film portions 8a and 8b, respectively, can be reduced by using the thermally stable first and second thin film portions 8a and 8b.
Since the detection is performed with reference to the temperature of the thin film 8 other than a and 8b, the stability of the output signal of the infrared detection device can be improved and the accuracy can be improved.
【００２１】尚、本実施形態では、薄膜８上にゼーベッ
ク効果を有する２種の金属をアレイ状に直列に形成して
いるが、複数個のＰＮ接合を直列に形成してもよい。 （実施形態３）本実施形態の赤外線検出装置の構造を図
３に示す。実施形態１又は２の赤外線検出装置におい
て、図３に示すように、第１及び第２の薄膜部８ａ，８
ｂが受光する赤外線の内、一方が受光する赤外線を完全
に遮断するとともに、他方が受光する赤外線をそのまま
入射させるような半円形のチョッパー１１を設けてお
り、チョッパー１１を第１及び第２の薄膜部８ａ，８ｂ
の上方で回転軸１２を中心として一定の周期で回転させ
ることにより、第１及び第２の薄膜部８ａ，８ｂは交互
に周期的に赤外線を受光している。In this embodiment, two kinds of metals having the Seebeck effect are formed in series on the thin film 8 in an array, but a plurality of PN junctions may be formed in series. (Embodiment 3) FIG. 3 shows the structure of an infrared detection device of this embodiment. In the infrared detecting device according to the first or second embodiment, as shown in FIG. 3, the first and second thin film portions 8a, 8
Among the infrared rays received by b, a semi-circular chopper 11 is provided so as to completely block the infrared rays received by one side and to directly enter the infrared rays received by the other side. Thin film parts 8a, 8b
, The first and second thin film portions 8a and 8b alternately and periodically receive infrared rays.
【００２２】ここで、第１の薄膜部８ａ上にはサーモパ
イルの温接点が設けられ、第２の薄膜部８ｂ上にはサー
モパイルの冷接点が設けられている。従って、温接点が
形成されている第１の薄膜部８ａが赤外線を受光してい
る場合、サーモパイルの出力信号は正となり、冷接点が
形成されている第２の薄膜部８ｂが赤外線を受光してい
る場合、サーモパイルの出力信号は負となる。A thermopile hot junction is provided on the first thin film portion 8a, and a thermopile cold contact is provided on the second thin film portion 8b. Therefore, when the first thin film portion 8a on which the hot junction is formed receives infrared light, the output signal of the thermopile becomes positive, and the second thin film portion 8b on which the cold junction is formed receives infrared light. The thermopile output signal is negative.
【００２３】ところで、第１及び第２の薄膜部８ａ，８
ｂがそれぞれ受光する赤外線の赤外線量が等しい場合、
第１及び第２の薄膜部８ａ，８ｂの熱容量は等しいの
で、両者の温度は等しくなる。従って、第１及び第２の
薄膜部８ａ，８ｂが夫々赤外線を受光している時、第１
の薄膜部８ａ上に設けられた温接点の温度と第２の薄膜
部８ｂ上に設けられた冷接点の温度とは等しくなり、サ
ーモパイルの出力信号は、大きさが等しく、極性が逆と
なる。The first and second thin film portions 8a, 8a
If b is equal in the amount of infrared light received,
Since the heat capacity of the first and second thin film portions 8a and 8b is equal, the temperatures of both are equal. Therefore, when the first and second thin film portions 8a and 8b receive infrared light, respectively,
And the temperature of the cold junction provided on the second thin film portion 8b is equal to the temperature of the hot junction provided on the thin film portion 8a, and the output signals of the thermopile are equal in magnitude and opposite in polarity. .
【００２４】従って、チョッパー１１の回転周期が第１
及び第２の薄膜部８ａ，８ｂ上に設けられたサーモパイ
ルの時定数に比べて十分長い場合、図４に示すように、
サーモパイルの出力信号は正弦波出力（図４のａ）とな
る。よって、本実施形態のサーモパイルの出力信号は交
流信号となるので、フィルタ等を用いて、出力信号に含
まれるノイズ成分やオフセット電圧を除去することがで
き、ノイズやオフセット電圧の影響が少ないサーモパイ
ルの出力信号を得ることができる。Therefore, the rotation cycle of the chopper 11
If the time constant is sufficiently longer than the time constant of the thermopile provided on the second thin film portions 8a and 8b, as shown in FIG.
The output signal of the thermopile is a sine wave output (a in FIG. 4). Therefore, since the output signal of the thermopile of the present embodiment is an AC signal, a noise component and an offset voltage included in the output signal can be removed using a filter or the like, and the effect of the noise and the offset voltage on the thermopile is small. An output signal can be obtained.
【００２５】尚、本実施形態のサーモパイルの構造は、
実施形態１又は２と同様であるので、その説明は省略す
る。 （実施形態４）本実施形態の赤外線検出装置の構造を図
５に示す。実施形態１又は２の赤外線検出装置におい
て、第１の薄膜部８ａに第１の被測定物１４ａからの赤
外線を受光させるための第１の光学系レンズ１３ａと、
第２の薄膜部８ｂに第２の被測定物１４ｂからの赤外線
を受光させるための第２の光学系レンズ１３ｂとが設け
られており、第１の薄膜部８ａと第２の薄膜部８ｂは、
それぞれ異なる第１及び第２の被測定物１４ａ，１４ｂ
から赤外線を受光している。The structure of the thermopile of this embodiment is as follows.
Since it is the same as the first or second embodiment, the description is omitted. (Embodiment 4) FIG. 5 shows the structure of an infrared detection device according to this embodiment. In the infrared detection device according to the first or second embodiment, a first optical system lens 13a for causing the first thin film portion 8a to receive infrared light from the first DUT 14a,
The second thin film portion 8b is provided with a second optical system lens 13b for receiving infrared rays from the second DUT 14b, and the first thin film portion 8a and the second thin film portion 8b are provided. ,
First and second DUTs 14a and 14b different from each other
Receiving infrared rays from
【００２６】ここで、第１及び第２の薄膜部８ａ，８ｂ
が、それぞれ第１及び第２の被側定物１４ａ，１４ｂか
ら赤外線を受光する場合、両者の温度は受光した赤外線
の赤外線量に比例してそれぞれ変化する。ところで、第
１及び第２の薄膜部８ａ，８ｂの熱容量は等しいので、
第１及び第２の薄膜部８ａ，８ｂの温度差は、両者が受
光した赤外線量の差に比例している。Here, the first and second thin film portions 8a, 8b
However, when infrared rays are received from the first and second fixed objects 14a and 14b, respectively, the temperatures of the both change in proportion to the amount of infrared rays received. By the way, since the first and second thin film portions 8a and 8b have the same heat capacity,
The temperature difference between the first and second thin film portions 8a and 8b is proportional to the difference in the amount of infrared light received by both.
【００２７】この時、第１の薄膜部８ａ上にはサーモパ
イルの温接点が設けられ、第２の薄膜部８ｂ上にはサー
モパイルの冷接点が設けられているので、温接点と冷接
点との温度差に比例してサーモパイルの出力信号が発生
する。従って、サーモパイルの出力信号は、第１及び第
２の薄膜部８ａ，８ｂが夫々受光した赤外線量の差に比
例するので、本実施形態のサーモパイルの出力信号か
ら、第１及び第２の被測定物１４ａ，１４ｂから受光し
た赤外線量の差を検出することができる。At this time, a thermopile hot junction is provided on the first thin film portion 8a, and a thermopile cold contact is provided on the second thin film portion 8b. An output signal of the thermopile is generated in proportion to the temperature difference. Accordingly, the output signal of the thermopile is proportional to the difference between the amounts of infrared rays received by the first and second thin film portions 8a and 8b, respectively. Therefore, the first and second measured signals are obtained from the output signal of the thermopile of the present embodiment. The difference between the amounts of infrared rays received from the objects 14a and 14b can be detected.
【００２８】尚、本実施形態のサーモパイルの構造は、
実施形態１又は２と同様であるので、その説明は省略す
る。The structure of the thermopile of this embodiment is as follows.
Since it is the same as the first or second embodiment, the description is omitted.
【００２９】[0029]
【発明の効果】請求項１の発明は、上述のように、半導
体基板の上面に形成された薄膜と、半導体基板の異なる
部位を夫々貫通して設けられた第１及び第２の凹部と、
薄膜の一部を構成し夫々第１及び第２の凹部の天井部を
なし互いに熱的に絶縁された第１及び第２の薄膜部と、
薄膜上に熱電対がアレイ状に直列に形成されたサーモパ
イルと、第１の薄膜部上に形成されたサーモパイルの温
接点と、第２の薄膜部上に形成されたサーモパイルの冷
接点とを備えているので、第１及び第２の薄膜部が赤外
線を受光していない場合、第１及び第２の薄膜部の温度
は等しくなり、温接点と冷接点の温度差が発生しないの
で、オフセット電圧が発生しないという効果がある。According to the first aspect of the present invention, the thin film formed on the upper surface of the semiconductor substrate is different from the thin film formed on the upper surface of the semiconductor substrate.
First and second concave portions provided through the respective portions,
The ceiling portions of the first and second concave portions which constitute a part of the thin film are respectively
A first and a second thin film part thermally insulated from each other;
A thermopile in which thermocouples are formed in series in an array on a thin film, a hot junction of a thermopile formed on a first thin film portion, and a cold junction of a thermopile formed on a second thin film portion Therefore, when the first and second thin film portions do not receive infrared rays, the temperatures of the first and second thin film portions become equal, and no temperature difference occurs between the hot junction and the cold junction, so that the offset voltage This has the effect that no occurrence occurs.
【００３０】請求項２の発明は、半導体基板の上面に形
成された薄膜と、半導体基板の異なる部位を夫々貫通し
て設けられた第１及び第２の凹部と、薄膜の一部を構成
し夫々第１及び第２の凹部の天井部をなし互いに熱的に
絶縁された第１及び第２の薄膜部と、薄膜上に夫々熱電
対がアレイ状に直列に形成され互いに逆極性に接続され
た第１及び第２のサーモパイルと、第１の薄膜部上に形
成された第１のサーモパイルの冷接点と、第２の薄膜部
上に形成された第２のサーモパイルの温接点と、第１及
び第２の薄膜部以外の薄膜上に形成された第１のサーモ
パイルの温接点及び第２のサーモパイルの冷接点とを備
えており、第１及び第２の薄膜部が赤外線を受光してい
ない場合、第１及び第２の薄膜部の熱容量が等しいの
で、両者の温度は等しくなり、逆極性に接続された第１
及び第２のサーモパイルに発生する熱起電力が互いに相
殺され、オフセット電圧が発生しないという効果があ
る。また、第１及び第２のサーモパイルの基準温度を熱
的に安定した第１及び第２の薄膜部以外の薄膜の温度と
しているので、基準温度の変動が少なく、赤外線検出装
置の出力信号が安定し、精度が向上するという効果もあ
る。According to a second aspect of the present invention, a thin film formed on an upper surface of a semiconductor substrate and a thin film formed on a different portion of the semiconductor substrate are respectively penetrated.
First and second recessed portions provided, and first and second thin film portions that constitute a part of the thin film and form a ceiling portion of the first and second recessed portions and are thermally insulated from each other, First and second thermopiles in which thermocouples are respectively formed in series in an array on the thin film and connected in opposite polarities; a cold junction of the first thermopile formed on the first thin film portion; A second thermopile hot junction formed on the second thin film portion, a first thermopile hot junction and a second thermopile cold junction formed on the thin film other than the first and second thin film portions. When the first and second thin film portions do not receive infrared light, the first and second thin film portions have the same heat capacity, so that the temperatures of the first and second thin film portions are equal, and the first and second thin film portions are connected in opposite polarities. 1
The thermoelectromotive force generated in the second thermopile and the thermoelectric power generated in the second thermopile are offset each other, and there is an effect that no offset voltage is generated. Further, since the reference temperatures of the first and second thermopiles are set to the temperatures of the thin films other than the thermally stable first and second thin film portions, the reference temperature fluctuates little and the output signal of the infrared detecting device is stable. In addition, there is an effect that accuracy is improved.
【００３１】請求項３の発明は、第１及び第２の薄膜部
が被測定物から受光する赤外線を交互に周期的に遮断す
る遮光手段を備えており、サーモパイルの出力信号が交
流信号となるので、信号処理が容易に行え、フィルタ等
を用いてノイズやオフセット電圧を除去することが出来
るという効果がある。請求項４の発明は、第１及び第２
の薄膜部が夫々異なる第１及び第２の被測定物から赤外
線を受光するための光学系レンズ等の集光手段を備えて
いるので、サーモパイルの出力信号から第１及び第２の
被測定物の赤外線量の差を検出することにより、異なる
２つの被測定物の赤外線量の差を非接触で検出できると
いう効果がある。According to a third aspect of the present invention, the first and second thin film portions are provided with light shielding means for alternately and periodically blocking infrared rays received from the object to be measured, and the output signal of the thermopile becomes an AC signal. Therefore, there is an effect that signal processing can be easily performed, and noise and offset voltage can be removed using a filter or the like. The invention of claim 4 is characterized in that the first and second
Is provided with a light condensing means such as an optical lens for receiving infrared rays from different first and second DUTs, so that the first and second DUTs can be obtained from the output signal of the thermopile. By detecting the difference in the amount of infrared light, there is an effect that the difference in the amount of infrared light between two different DUTs can be detected in a non-contact manner.
【図１】（ａ）実施形態１の赤外線検出装置を示す平面
図である。 （ｂ）同上の断面図である。FIG. 1A is a plan view illustrating an infrared detection device according to a first embodiment. (B) It is sectional drawing same as the above.
【図２】（ａ）実施形態２の赤外線検出装置を示す平面
図である。 （ｂ）同上の断面図である。FIG. 2A is a plan view illustrating an infrared detection device according to a second embodiment. (B) It is sectional drawing same as the above.
【図３】実施形態３の赤外線検出装置を示す外観斜視図
である。FIG. 3 is an external perspective view illustrating an infrared detection device according to a third embodiment.
【図４】同上の動作状態を示す波形図である。FIG. 4 is a waveform chart showing an operation state of the above.
【図５】実施形態４の赤外線検出装置を示す外観斜視図
である。FIG. 5 is an external perspective view illustrating an infrared detection device according to a fourth embodiment.
【図６】（ａ）従来例の赤外線検出装置を示す平面図で
ある。 （ｂ）同上の断面図である。FIG. 6A is a plan view showing a conventional infrared detection device. (B) It is sectional drawing same as the above.
１ 第１の金属 ２ 第２の金属 ３ 温接点 ４ 冷接点 ７ 半導体基板 ８ 薄膜 ８ａ 第１の薄膜部 ８ｂ 第２の薄膜部 ９ａ 第１の凹部 ９ｂ 第２の凹部 １０ サーモパイル DESCRIPTION OF SYMBOLS 1 1st metal 2 2nd metal 3 Hot junction 4 Cold junction 7 Semiconductor substrate 8 Thin film 8a First thin film portion 8b Second thin film portion 9a First concave portion 9b Second concave portion 10 Thermopile
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G01J 1/02 G01J 5/02 G01J 5/16 H01L 35/32 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) G01J 1/02 G01J 5/02 G01J 5/16 H01L 35/32
Claims (4)
記半導体基板の異なる部位を夫々貫通して設けられた第
１及び第２の凹部と、前記薄膜の一部を構成し夫々前記
第１及び第２の凹部の天井部をなし互いに熱的に絶縁さ
れた第１及び第２の薄膜部と、前記薄膜上に熱電対がア
レイ状に直列に形成されたサーモパイルと、前記第１の
薄膜部上に形成された前記サーモパイルの温接点と、前
記第２の薄膜部上に形成された前記サーモパイルの冷接
点とを備えて成ることを特徴とする赤外線検出装置。1. A a thin film formed on the upper surface of the semiconductor substrate, prior to
The third portion is provided through each of the different portions of the semiconductor substrate.
A first and second recess, configured respectively the part of the thin film
First and second thin film portions forming ceiling portions of first and second concave portions and thermally insulated from each other; a thermopile having thermocouples formed in series on the thin film in an array; An infrared detecting device comprising: a hot junction of the thermopile formed on the thin film portion; and a cold junction of the thermopile formed on the second thin film portion.
記半導体基板の異なる部位を夫々貫通して設けられた第
１及び第２の凹部と、前記薄膜の一部を構成し夫々前記
第１及び第２の凹部の天井部をなし互いに熱的に絶縁さ
れた第１及び第２の薄膜部と、前記薄膜上に夫々熱電対
がアレイ状に直列に形成され互いに逆極性に接続された
第１及び第２のサーモパイルと、前記第１の薄膜部上に
形成された前記第１のサーモパイルの冷接点と、前記第
２の薄膜部上に形成された前記第２のサーモパイルの温
接点と、前記第１及び第２の薄膜部以外の前記薄膜上に
形成された前記第１のサーモパイルの温接点及び前記第
２のサーモパイルの冷接点とを備えて成ることを特徴と
する赤外線検出装置。Wherein the thin film formed on the upper surface of the semiconductor substrate, prior to
The third portion is provided through each of the different portions of the semiconductor substrate.
A first and second recess, configured respectively the part of the thin film
First and second thin film portions which form ceiling portions of the first and second concave portions and are thermally insulated from each other, and thermocouples are formed on the thin film in series in an array, respectively, and connected in opposite polarities. First and second thermopiles, a cold junction of the first thermopile formed on the first thin film portion, and a hot junction of the second thermopile formed on the second thin film portion And a hot junction of the first thermopile and a cold junction of the second thermopile formed on the thin film other than the first and second thin film portions. .
受光する赤外線を交互に周期的に遮断する遮光手段を備
えて成ることを特徴とする請求項１又は２記載の赤外線
検出装置。3. The infrared detection device according to claim 1, wherein said first and second thin film portions are provided with light shielding means for alternately and periodically blocking infrared light received from an object to be measured. apparatus.
１及び第２の被測定物から赤外線を受光するための光学
系レンズ等の集光手段を備えて成ることを特徴とする請
求項１又は２記載の赤外線検出装置。4. The apparatus according to claim 1, wherein said first and second thin film portions are provided with light collecting means such as an optical lens for receiving infrared rays from different first and second objects to be measured. The infrared detection device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07248102A JP3101190B2 (en) | 1995-09-26 | 1995-09-26 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07248102A JP3101190B2 (en) | 1995-09-26 | 1995-09-26 | Infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0989655A JPH0989655A (en) | 1997-04-04 |
| JP3101190B2 true JP3101190B2 (en) | 2000-10-23 |
Family
ID=17173257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07248102A Expired - Fee Related JP3101190B2 (en) | 1995-09-26 | 1995-09-26 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3101190B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2002075262A1 (en) * | 2001-03-16 | 2004-07-08 | セイコーエプソン株式会社 | Infrared detector, method of manufacturing the same, and temperature measuring device |
| US20040187904A1 (en) * | 2003-02-05 | 2004-09-30 | General Electric Company | Apparatus for infrared radiation detection |
| DE102006062772B4 (en) * | 2006-10-31 | 2012-03-01 | Webasto Ag | Method for providing an anti-jamming protection for moving parts of a motor vehicle, in particular for realizing an anti-jamming protection in a convertible vehicle |
| JP2009105100A (en) * | 2007-10-19 | 2009-05-14 | Furukawa Electric Co Ltd:The | Temperature element and temperature detecting module, and temperature detection method, heating/cooling module, and temperature control method therefor |
| JP2010225608A (en) * | 2009-03-19 | 2010-10-07 | Mitsubishi Materials Corp | Thermoelectric conversion element |
| JP2010225609A (en) * | 2009-03-19 | 2010-10-07 | Mitsubishi Materials Corp | Thermoelectric conversion element |
| JP6467254B2 (en) * | 2015-03-16 | 2019-02-06 | ヤマハファインテック株式会社 | Infrared sensor |
-
1995
- 1995-09-26 JP JP07248102A patent/JP3101190B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0989655A (en) | 1997-04-04 |
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