JP3096943B2 - Laser polishing method and apparatus for diamond and diamond product using the same - Google Patents
Laser polishing method and apparatus for diamond and diamond product using the sameInfo
- Publication number
- JP3096943B2 JP3096943B2 JP04351759A JP35175992A JP3096943B2 JP 3096943 B2 JP3096943 B2 JP 3096943B2 JP 04351759 A JP04351759 A JP 04351759A JP 35175992 A JP35175992 A JP 35175992A JP 3096943 B2 JP3096943 B2 JP 3096943B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- laser
- polishing
- focal point
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、切削工具、メス、ヒー
トシンク基板材料などに用いられるダイヤモンド薄膜の
レーザ研磨方法、その方法を実施するための装置および
その方法を利用したダイヤモンド製品に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for laser-polishing a diamond thin film used as a material for a cutting tool, a scalpel, a heat sink substrate, etc., an apparatus for carrying out the method, and a diamond product using the method.
【０００２】[0002]
【従来の技術】近時、気相合成法で形成したダイヤモン
ド薄膜を基材に固着した切削工具が提案されている。こ
の気相合成法で形成したダイヤモンド薄膜は表面の凹凸
が大きいため、たとえばダイヤモンド粒子を用いて表面
を研磨する必要がある。しかしこの方法は研磨速度が遅
いので、小さなダイヤモンドでも研磨加工が長時間にな
る。そこで、研磨時間短縮のため、エネルギ密度の高い
レーザビームを用いて析出ダイヤモンドの表面を平滑に
加工する研磨方法が提案されている（特開平３−２６４
１８１号公報、特開平３−２７２８１０号公報参照）。
この研磨方法では、図９に示すように、まず析出ダイヤ
モンド１０１の端部近辺に凸レンズ１０２で円錐状に集
束させたレーザビーム１０３の側面１０４を平行に配置
する。そして凸部１０１ａを熱で除去しながらレーザー
ビームを設計研磨面に沿って相対的に移動させる（矢印
Ｘ）。さらに端部の帯状の領域Ｒ１の研磨が完了する
と、テーブル１０５を矢印Ｙ方向に移動して、つぎの帯
状の領域Ｒ２を同じように研磨していくのである。2. Description of the Related Art Recently, cutting tools have been proposed in which a diamond thin film formed by a vapor phase synthesis method is fixed to a substrate. Since the diamond thin film formed by this vapor phase synthesis method has large irregularities on the surface, it is necessary to polish the surface using, for example, diamond particles. However, this method has a low polishing rate, so that the polishing process takes a long time even with a small diamond. Therefore, in order to shorten the polishing time, a polishing method has been proposed in which the surface of the precipitated diamond is processed smoothly using a laser beam having a high energy density (Japanese Patent Laid-Open No. 3-264).
181 and JP-A-3-272810).
In this polishing method, as shown in FIG. 9, first, a side surface 104 of a laser beam 103 focused conically by a convex lens 102 near an end of a precipitated diamond 101 is arranged in parallel. Then, the laser beam is relatively moved along the designed polishing surface while removing the convex portion 101a by heat (arrow X). Further, when the polishing of the band-shaped region R1 at the end is completed, the table 105 is moved in the direction of the arrow Y, and the next band-shaped region R2 is polished in the same manner.
【０００３】[0003]
【発明が解決しようとする課題】前記従来の研磨方法は
１度に研磨できる領域の幅Ｗを３００μｍ程度と比較的
大きくとれる利点がある反面、エネルギ密度の低いレー
ザビーム側面で研磨するので、研磨効率が低いという欠
点がある。そのためレーザビームの移動速度を速くする
ことができず、たとえば平均出力８Ｗ、パルス周波数１
ｋＨｚで、面積７ｍｍ×３ｍｍの析出ダイヤモンド薄膜
の表面粗度を、Ｒｍａｘ＝３μｍにまで平滑にするには
約２０分かかる。The above-mentioned conventional polishing method has an advantage that the width W of a region that can be polished at once can be relatively large, about 300 μm, but it is polished on the side of a laser beam having a low energy density. There is a disadvantage of low efficiency. Therefore, the moving speed of the laser beam cannot be increased. For example, the average output is 8 W and the pulse frequency is 1
It takes about 20 minutes to smooth the surface roughness of a deposited diamond thin film having an area of 7 mm × 3 mm at KHz to Rmax = 3 μm.
【０００４】本発明は前記従来のレーザーによるダイヤ
モンドの研磨方法を改良し、研磨効率を向上させて加工
速度を速くすること、およびその方法を実施する装置を
提供することを課題としている。[0004] It is an object of the present invention to improve the above-mentioned conventional diamond polishing method using a laser, to increase the processing speed by improving the polishing efficiency, and to provide an apparatus for performing the method.
【０００５】[0005]
【課題を解決するための手段】請求項１のダイヤモンド
のレーザ研磨方法は、ダイヤモンドの表面に対し、その
表面近辺に焦点を結ぶようにレーザを斜め方向から照射
し、レーザの焦点をダイヤモンドの表面上を走査すると
共にダイヤモンドをずらせるようにして両者に相対的に
運動を与えるようにして、レーザの焦点でダイヤモンド
表面に形成された凸部を除去するようにしたことを特徴
とする。請求項２の方法は、請求項１の方法において、
ダイヤモンドを直角に回転させることによって、２方向
の研磨をするようにしたことを特徴とする。請求項３の
方法は、請求項１の方法において、ダイヤモンドを回転
させることによって、うず巻状の研磨をするようにした
ことを特徴とする。請求項４のレーザ研磨装置は、請求
項１〜３のいずれかの方法を実施するための装置であっ
て、ダイヤモンドを備えた加工対象物を載置するテーブ
ルと、該テーブルに対し、斜め方向からレーザを照射す
るように、かつ加工対象物の表面に焦点を結ぶように配
置したレーザ照射源と、前記テーブルにテーブルの表面
に平行の一次元の運動を生じさせるテーブル駆動装置
と、前記レーザの照射方向を揺動させることにより焦点
を走査し、その焦点でダイヤモンド表面に形成された凸
部を除去するようにしたレーザ照射源駆動装置とを備え
たことを特徴とする。請求項５の装置は、テーブル駆動
装置が、テーブルを往復運動をさせるものであることを
特徴とする。請求項６の装置は、テーブル駆動装置がテ
ーブルをその表面に対して垂直な軸まわりに回転駆動さ
せるものであり、前記レーザ照射源駆動装置がレーザの
焦点を半径方向に走査するものであることを特徴とす
る。請求項７のダイヤモンド製品は、基板と、該基板上
に気相合成法で形成されたダイヤモンド薄膜とからな
り、該ダイヤモンド薄膜の外側の折出面が請求項１、２
または３記載の方法で平滑に研磨されてなるものである
ことを特徴とする。請求項８の切削工具は、請求項７記
載のダイヤモンド製品を、研磨面が外側になるように取
り付けたものであることを特徴とする。According to a first aspect of the present invention, there is provided a method of polishing a diamond by irradiating a laser to a surface of the diamond obliquely so as to focus on the vicinity of the surface of the diamond. The method is characterized in that the diamond is moved upward so that the diamond is displaced so that the two are relatively moved to remove the projections formed on the diamond surface at the focal point of the laser. The method of claim 2 is a method according to claim 1,
The diamond is polished in two directions by rotating the diamond at right angles. According to a third aspect of the present invention, in the method of the first aspect, the diamond is rotated to perform the spiral polishing. A laser polishing apparatus according to a fourth aspect is an apparatus for performing the method according to any one of the first to third aspects, and a table on which an object to be processed having diamond is placed, and an oblique direction with respect to the table. A laser irradiation source arranged so as to irradiate a laser beam from the laser beam and to focus on the surface of the object to be processed; a table driving device for causing the table to generate a one-dimensional movement parallel to the surface of the table; And a laser irradiation source driving device that scans the focal point by oscillating the irradiation direction, and removes the convex portion formed on the diamond surface at the focal point. The device according to claim 5 is characterized in that the table driving device reciprocates the table. 7. The apparatus according to claim 6, wherein the table driving device drives the table to rotate around an axis perpendicular to the surface thereof, and the laser irradiation source driving device scans the focal point of the laser in a radial direction. It is characterized by. The diamond product according to claim 7 comprises a substrate and a diamond thin film formed on the substrate by a vapor phase synthesis method, wherein the outer bent surface of the diamond thin film is claimed.
Alternatively, it is characterized by being polished smoothly by the method described in 3. The cutting tool according to claim 8 is characterized in that the diamond product according to claim 7 is attached so that the polished surface is on the outside.
【０００６】[0006]
【作用】本発明の方法においては、析出ダイヤモンドの
表面に対し、その表面近辺に焦点を結ぶようにレーザを
照射するので、最もエネルギ密度の高い焦点で加工する
ことができる。そのため研磨速度を従来の方法に比して
はるかに速くすることができる。また斜め方向、好まし
くは４５度以下の方向から照射するので、表面に部分的
に穴（欠陥）をあけてしまうといった問題が回避され、
析出ダイヤモンド表面の凸部のみを効率的に除去し得
る。請求項２の方法はレーザビームを振ることにより走
査するので、加工速度を一層速くすることができる。請
求項３の方法においては、レーザをパルス状に照射する
と共に、レーザとダイヤモンドとの相対移動速度に応じ
てパルス幅を制御するので、表面に対して均一なピッチ
でパルス照射を行うことができる。したがって相対移動
速度が変化するような走査方法も自由に採用しうる。請
求項４の本発明の装置は、テーブルに一次元の運動を行
わせると共に、レーザ照射の方向一軸まわりに揺動させ
るので、両者の相対運動によりレーザの焦点が加工対象
の表面に沿って二次元の走査を行う。そのため簡単な走
査機構で高速の平面ないし曲面研磨を行うことができ
る。請求項５の装置はテーブルが回転し、レーザの焦点
をテーブルの半径方向に走査させるので、焦点は、全体
として「うず巻状」の軌跡を描きながら研磨を行う。こ
の場合、テーブルの回転速度を徐々に変化させてもよ
く、レーザのパルス幅を変化させてもよい。本発明のダ
イヤモンド製品は、硬度が高く緻密なダイヤモンド析出
面を外側にしているので、製品耐久性が高い利点があ
る。本発明の切削工具は、前記方法で研磨したダイヤモ
ンド製品を、平滑な研磨面が外側になるように取り付け
ているので切れ味がよく、耐久性が高い。In the method of the present invention, the surface of the precipitated diamond is irradiated with laser so as to focus on the vicinity of the surface, so that the processing can be performed with the focal point having the highest energy density. Therefore, the polishing rate can be made much faster than the conventional method. In addition, since irradiation is performed in an oblique direction, preferably in a direction of 45 degrees or less, a problem that a hole (defect) is partially formed in the surface is avoided.
Only the protrusions on the surface of the precipitated diamond can be efficiently removed. In the method according to the second aspect, since the scanning is performed by shaking the laser beam, the processing speed can be further increased. In the method according to the third aspect, the laser is irradiated in a pulse shape, and the pulse width is controlled in accordance with the relative moving speed between the laser and the diamond, so that the surface can be irradiated with the pulse at a uniform pitch. . Therefore, a scanning method in which the relative moving speed changes can be freely adopted. In the apparatus according to the fourth aspect of the present invention, the table is caused to perform one-dimensional movement, and at the same time, is swung about one axis in the direction of laser irradiation. Perform a dimensional scan. Therefore, high-speed flat or curved surface polishing can be performed with a simple scanning mechanism. In the apparatus according to the fifth aspect, since the table is rotated and the focal point of the laser is scanned in the radial direction of the table, the focal point is polished while drawing a "spiral-shaped" locus as a whole. In this case, the rotation speed of the table may be gradually changed, or the pulse width of the laser may be changed. The diamond product of the present invention has an advantage of high product durability because the diamond has a high hardness and a dense diamond deposition surface on the outside. The cutting tool of the present invention has good sharpness and high durability because the diamond product polished by the above method is attached so that the smooth polished surface is on the outside.
【０００７】[0007]
【実施例】つぎに図面を参照しながら本発明の方法およ
び装置を説明する。図１は本発明の方法の一実施例を示
す工程説明図、図２は図１のａ工程の拡大図、図３は本
発明の装置の一実施例を示す全体配置図、図４は本発明
の装置にかかわるテーブルの一実施例を示す斜視図、図
５ａおよび図５ｂはそれぞれ本発明のダイヤモンド製品
の一実施例を示す加工前および加工後の断面図、図６ａ
および図６ｂはそれぞれ本発明の方法で研磨する前およ
び研磨後のダイヤモンド薄膜の表面状態を示す拡大断面
図、図７は本発明の方法で研磨したダイヤモンド薄膜の
拡大斜視図、図８は本発明の切削工具の一実施例を示す
斜視図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method and apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a process explanatory view showing one embodiment of the method of the present invention, FIG. 2 is an enlarged view of step a in FIG. 1, FIG. 3 is an overall layout view showing one embodiment of the apparatus of the present invention, and FIG. FIG. 5A is a perspective view showing an embodiment of a table relating to the apparatus of the present invention, and FIGS. 5A and 5B are cross-sectional views before and after processing showing an embodiment of the diamond product of the present invention, respectively.
6 and 6b are enlarged sectional views showing the surface states of the diamond thin film before and after polishing by the method of the present invention, respectively, FIG. 7 is an enlarged perspective view of the diamond thin film polished by the method of the present invention, and FIG. 1 is a perspective view showing an embodiment of the cutting tool of FIG.
【０００８】まず図１ａ〜１ｃを参照して本発明の方法
を説明する。図１の１はシリコン基板２上に気相合成法
により形成したダイヤモンド薄膜（以下、薄膜という）
である。その自由表面３、すなわち析出面は不純物や空
隙が少ないので硬度は高いが、多数の凸部４が突出して
いる。図１の場合は、このような薄膜１の表面３に凸レ
ンズ５で集束したレーザビーム６の焦点７を当てること
により前記凸部４を除去する。図１ａの実施例ではさら
にレーザビーム６の光軸８が表面３に対してある角度
（照射角度）θで傾斜しており、そのため凸部４に対し
ては斜め側方から照射している。なおこの照射角度はも
っと大きくてもよい。ただし９０度になると凸部４を除
去するにとどまらず、表面３に穴があき表面欠陥となる
ので９０度未満とする。すなわち請求の範囲にいう「斜
め方向から照射する」とは、図１ａのθが０度＜θ＜９
０度の範囲にあることを意味する。なお図１ａの符号９
はレーザビームを薄膜１の表面に沿って走査するための
ガルバノミラーを模式的に表したものである。First, the method of the present invention will be described with reference to FIGS. 1 is a diamond thin film (hereinafter, referred to as a thin film) formed on a silicon substrate 2 by a vapor phase synthesis method.
It is. The free surface 3, that is, the deposition surface has high hardness because of few impurities and voids, but has many convex portions 4 protruding. In the case of FIG. 1, the convex portion 4 is removed by focusing the laser beam 6 focused by the convex lens 5 on the surface 3 of the thin film 1. In the embodiment of FIG. 1 a, the optical axis 8 of the laser beam 6 is further inclined at an angle (irradiation angle) θ with respect to the surface 3, so that the projection 4 is irradiated from an oblique side. This irradiation angle may be larger. However, when the angle is 90 degrees, not only the protrusions 4 are removed but also a hole is formed in the surface 3 and a surface defect is caused. That is, “irradiation from an oblique direction” in the claims means that θ in FIG. 1A is 0 degree <θ <9.
It is within the range of 0 degrees. Note that reference numeral 9 in FIG.
1 schematically shows a galvano mirror for scanning a laser beam along the surface of the thin film 1.
【０００９】図１の実施例では図１ａに示す基本的な研
磨の形態を維持しながら、焦点７を薄膜１の表面に２次
的に走査し、全体を研磨する。走査の方法はたとえば図
１ａのガルバノミラー９を軸１０まわりに振り、図１ｂ
に示すようにレーザビーム６を縦方向、すなわちレーザ
ビーム６を含み、かつ薄膜１に垂直な平面Ｐと薄膜表面
との交線Ｌに沿う方向（矢印Ｓ）に振ることにより焦点
７を薄膜１表面に沿って走査する。さらにこのように交
線に沿った研磨が完了すると、図１ｃに示すように薄膜
１を有する素材を矢印Ｎ方向にずらせ、つぎの隣接する
直線Ｌ２に沿って研磨していく。そしてさらに同様に次
々とＬ３、Ｌ４、……の順に研磨をすすめていく。図１
ｃの１方向の研磨後、さらに対象物を９０度回転させ、
全体として２方向の研磨をしてもよい（図１ｄ）。なお
前記ガルバノミラー９の軸１０と直角方向に軸を形成さ
せたガルバノミラーをもう１台設置し、前記矢印Ｎ方向
に素材をずらせるかわりに、レーザビームを２次元的に
走査することも可能である。前記図１ｂのようにレーザ
ビームを振る場合、厳密には、図２の焦点距離Ｆｒをこ
れに応じて変えなければ、焦点７が表面に当たらない。
しかし焦点距離Ｆｒが大きい場合、たとえば２００ｍｍ
以上の場合は、薄膜の大きさ（たとえば１辺１６ｍｍの
正方形）に比してほとんど問題にならない。しかも焦点
７部分のレーザビーム径が０．０６〜０．１ｍｍ程度の
場合、図２の焦点７の前後１〜５ｍｍの領域Ｒであれば
充分に研磨できる。そのためレーザビーム６は平行移動
させずに単にガルバノミラー９などで振ることにより走
査すれば充分である。なお図１ｂ、図１ｃでレーザ研磨
部分を薄膜１の表面に不連続な領域Ｒとして示している
のは、レーザビームをパルス状に照射することを表して
いる。このようにパルス状に不連続に照射すると、尖頭
値出力は連続発振時の約１０００倍に達し、ダイヤモン
ド表面を研磨加工するのに十分のパワー密度を得ること
ができるという効果がある。また後述するように、二次
元相対運動の駆動方法により焦点の移動速度が変化する
場合でも、パルス幅を制御することにより容易に均一な
研磨を行うことができる利点がある。In the embodiment shown in FIG. 1, the focal point 7 is secondarily scanned on the surface of the thin film 1 while the basic polishing mode shown in FIG. The scanning method is, for example, to swing the galvanomirror 9 of FIG.
As shown in FIG. 5, the focal point 7 is moved in the vertical direction, that is, in the direction (arrow S) along the intersection L between the plane P containing the laser beam 6 and perpendicular to the thin film 1 and the surface of the thin film 1 to move the focal point 7 to the thin film 1. Scan along the surface. Further, when the polishing along the intersection line is completed, the material having the thin film 1 is shifted in the direction of arrow N as shown in FIG. 1C, and is polished along the next adjacent straight line L2. Then, the polishing is sequentially performed in the order of L3, L4, and so on. FIG.
After polishing in one direction of c, the object is further rotated by 90 degrees,
Polishing may be performed in two directions as a whole (FIG. 1d). It is also possible to install another galvanometer mirror having an axis perpendicular to the axis 10 of the galvanometer mirror 9 and scan the laser beam two-dimensionally instead of shifting the material in the direction of the arrow N. It is. When the laser beam is oscillated as shown in FIG. 1B, strictly speaking, the focal point 7 does not hit the surface unless the focal length Fr in FIG. 2 is changed accordingly.
However, when the focal length Fr is large, for example, 200 mm
In the above case, there is almost no problem compared to the size of the thin film (for example, a square having a side of 16 mm). In addition, when the laser beam diameter at the focal point 7 is about 0.06 to 0.1 mm, sufficient polishing can be performed in the region R of 1 to 5 mm before and after the focal point 7 in FIG. Therefore, it is sufficient to scan the laser beam 6 by simply shaking it with the galvanomirror 9 or the like without moving it in parallel. In FIGS. 1B and 1C, the laser-polished portion is indicated as a discontinuous region R on the surface of the thin film 1, which means that the laser beam is irradiated in a pulse shape. When the pulse is discontinuously irradiated in this manner, the peak value output reaches about 1000 times that of the continuous oscillation, and there is an effect that a power density sufficient for polishing the diamond surface can be obtained. Further, as described later, even when the moving speed of the focal point is changed by the driving method of the two-dimensional relative motion, there is an advantage that uniform polishing can be easily performed by controlling the pulse width.
【００１０】つぎに図３〜４を参照して前記研磨方法を
実施するための装置の好ましい実施例を説明する。図３
の１１は光学系およびＱスイッチを含むレーザ発生源で
あり、このものはガルバノミラーで走査するガルバノメ
ータ型オプテカスルキャナ方式を採用している。焦点近
傍のレーザのビーム径は、たとえば０．０６〜０．１ｍ
ｍである。なおＱスイッチとはパルス幅制御のためのも
のである。このようなレーザ発生源（レーザ照射装置）
１１に対しては、Ｑスイッチドライバを含む電源ボック
ス１２からレーザ発振用の電力およびＱスイッチを制御
する信号が送られるようにしている。さらに前記レーザ
発生源１１および電源ボックス１２はパーソナルコンピ
ュータを含む制御装置１３により制御される。またレー
ザ発生源１１のビーム照射口１１ａに対向して研磨対象
物を載置するテーブル１４が配置されている。Next, referring to FIGS. 3 and 4, a preferred embodiment of an apparatus for carrying out the polishing method will be described. FIG.
Reference numeral 11 denotes a laser generation source including an optical system and a Q switch, which employs a galvanometer-type opt-castle canna system that scans with a galvanometer mirror. The beam diameter of the laser near the focal point is, for example, 0.06 to 0.1 m.
m. The Q switch is for controlling the pulse width. Such a laser source (laser irradiation device)
For 11, power for laser oscillation and a signal for controlling the Q switch are sent from a power supply box 12 including a Q switch driver. Further, the laser source 11 and the power supply box 12 are controlled by a control device 13 including a personal computer. Further, a table 14 on which an object to be polished is placed is arranged opposite to the beam irradiation port 11a of the laser source 11.
【００１１】図４は研磨対象物（表面にダイヤモンド薄
膜を備えたシリコン基板２）を載せるためのテーブルの
一実施例を示しており、この実施例では軸１５まわりに
回転するターンテーブル１６を採用している。本実施例
の場合は、レーザビーム６の照射角度をＳ方向に振って
半径方向に走査する。したがって走査速度を大きくしう
る。ターンテーブル１６を矢印Ａ方向に回転させながら
レーザビームを矢印Ｓ方向に振ると、焦点７はうず巻き
状または同心円状の軌跡１７を描きながら薄膜１の表面
を研磨していく。ターンテーブル１６の回転速度および
パルスの周波数は一定でもよいが、変化させてもよい。
すなわち焦点が半径内側に近づくにつれてターンテーブ
ル１６の１回転当たりのうず巻線の長さが短くなるが、
たとえばターンテーブル１６の回転数を次第に増加する
ことにより、焦点７の相対移動速度を均一にし、レーザ
ビームの線長さ当たりの照射量を均一化するようにして
もよい。また前記Ｑスイッチの制御を通じ、パルス幅を
次第に大きくすることにより、レーザビームの線長さ当
たりの照射量を均一化するようにしてもよい。FIG. 4 shows an embodiment of a table for placing an object to be polished (silicon substrate 2 having a diamond thin film on the surface). In this embodiment, a turntable 16 which rotates around an axis 15 is employed. doing. In the case of the present embodiment, scanning is performed in the radial direction by changing the irradiation angle of the laser beam 6 in the S direction. Therefore, the scanning speed can be increased. When the laser beam is swung in the direction of arrow S while rotating the turntable 16 in the direction of arrow A, the focal point 7 polishes the surface of the thin film 1 while drawing a spiral or concentric trajectory 17. The rotation speed of the turntable 16 and the frequency of the pulse may be constant or may be changed.
That is, as the focal point approaches the inside of the radius, the length of the spiral winding per rotation of the turntable 16 decreases,
For example, by gradually increasing the rotation speed of the turntable 16, the relative movement speed of the focal point 7 may be made uniform, and the irradiation amount per line length of the laser beam may be made uniform. Further, the irradiation amount per line length of the laser beam may be made uniform by gradually increasing the pulse width through the control of the Q switch.
【００１２】前記レーザビームによる研磨加工を行うこ
とにより、図５Ａに示すダイヤモンド薄膜は、図５Ｂに
示すように平滑化される。本発明の方法は、シリコン基
板上に気相合成法によりダイヤモンド薄膜を形成する場
合のように、表面の凹凸が大きい場合に用いられるが、
他の製法により形成したダイヤモンド薄膜あるいはダイ
ヤモンド小片の表面の平滑化に用いることができる。ま
たシリコン以外の基板も使用しうる。By performing the polishing process using the laser beam, the diamond thin film shown in FIG. 5A is smoothed as shown in FIG. 5B. The method of the present invention is used when surface irregularities are large, such as when a diamond thin film is formed on a silicon substrate by a vapor phase synthesis method,
It can be used for smoothing the surface of a diamond thin film or diamond piece formed by another manufacturing method. Substrates other than silicon can also be used.
【００１３】ダイヤモンドの気相合成法としては、熱電
子放射材法、直流アーク放電法、直流グロー放電法、マ
イクロ波放電法、あるいは高同波放電法など、任意の方
法を用いることができる。またレーザ発生源としてはレ
ーザ加工に通常用いられるＹＡＧレーザ（イットリウム
アルゴンガーネットレーザ）が好ましいが、他の種類の
レーザであってもよい。つぎに具体的な実施例をあげて
本発明の方法を説明する。As the diamond vapor phase synthesis method, any method such as a thermionic emission method, a DC arc discharge method, a DC glow discharge method, a microwave discharge method or a high-frequency discharge method can be used. The laser source is preferably a YAG laser (yttrium argon garnet laser) usually used for laser processing, but may be another type of laser. Next, the method of the present invention will be described with reference to specific examples.
【００１４】（実施例１）シリコン基板として８ｍｍ角
で厚さ０．３ｍｍの（１００）面を用い、マイクロ波放
電法によりシリコン基板に厚さ３００μｍのダイヤモン
ド薄膜を形成した。このときのマイクロ波放電法の条件
としては、水素流量が８５ｍｌ／ｍｉｎ、メタン流量が
１５ｍｌ／ｍｉｎ、作動圧力が１２０ｔｏｒｒであり、
基板は強制水冷し、そして放電電力が１０００Ｗで１０
０時間ダイヤモンドを形成した。得られたダイヤモンド
薄膜の表面の凹凸状態を図６Ａに示す。なお縦軸は横軸
の４０倍に拡大している。析出したままのダイヤモンド
薄膜の表面の粗度はＲａ（平均粗度）＝５．８μｍ、Ｒ
ｍａｘ（最大粗度）＝４５．０μｍで、このものに対
し、以下の条件でレーザ研磨を行った。使用したレーザ
は、レーザ平均出力０〜９Ｗ、Ｑスイッチ周波数０．１
〜５０ｋＨｚのＹＡＧレーザである。Example 1 A (100) plane having a thickness of 8 mm square and a thickness of 0.3 mm was used as a silicon substrate, and a 300 μm-thick diamond thin film was formed on the silicon substrate by a microwave discharge method. At this time, the conditions of the microwave discharge method are as follows: hydrogen flow rate is 85 ml / min, methane flow rate is 15 ml / min, operating pressure is 120 torr,
The substrate was forced water cooled, and the discharge power was 1000 W for 10
Diamond was formed for 0 hours. FIG. 6A shows an uneven state of the surface of the obtained diamond thin film. The vertical axis is enlarged to 40 times the horizontal axis. The surface roughness of the as-deposited diamond thin film is Ra (average roughness) = 5.8 μm, R
Max (maximum roughness) = 45.0 μm, and this was subjected to laser polishing under the following conditions. The laser used was laser average output 0-9W, Q switch frequency 0.1
-50 kHz YAG laser.
【００１５】まず前記対象物をＸ−Ｙテーブル上に載
せ、レーザの光軸とテーブル表面との角度θを１度、１
０度、２０度、４５度、８０度のいずれかに維持し、８
ｍｍ×８ｍｍの薄膜の中心に焦点を合わせたうえで、ミ
ラーの振りに基づくマーキング速度（研磨面上の焦点移
動速度）ｖ＝１０ｍｍ／秒で加工した。このときパルス
間隔λを３．３μｍに条件設定したので、ｖ＝λ・ｆ
（ｖ：ｍｍ／秒、λ：μｍ、ｆ：ｋＨｚ）より、Ｑスイ
ッチ周波数ｆは３ｋＨｚとなる。また加工時の平均出力
＝６．４Ｗ、尖頭値出力＝２３．７ｋｗであった。さら
に広角レンズを使用して、レーザビームの焦点距離は２
４４ｍｍとした。なお隣接する加工線同士の間隔、すな
わちハッチング間隔は、５μｍとした。これにより全体
の加工線の総長さは８×８（シリコン基板の面積）／
０．００５（ハッチング間隔）＝１２８００ｍｍであ
る。前記加工条件で、レーザビームの照射角θを変えて
１方向研磨（図１ｃ参照）および２方向研磨（図１ｄ参
照）の方法で加工した。First, the object is placed on an XY table, and the angle θ between the optical axis of the laser and the table surface is set to 1 degree, 1 degree.
Maintain at 0 degree, 20 degree, 45 degree, 80 degree, 8
After focusing on the center of the thin film of 8 mm × 8 mm, the film was processed at a marking speed (focal moving speed on the polished surface) v = 10 mm / sec based on the swing of the mirror. At this time, since the pulse interval λ was set to 3.3 μm, v = λ · f
(V: mm / sec, λ: μm, f: kHz), the Q switch frequency f is 3 kHz. The average output during processing was 6.4 W and the peak output was 23.7 kW. Using a wide-angle lens, the focal length of the laser beam is 2
44 mm. The interval between the adjacent processing lines, that is, the hatching interval was 5 μm. Thus, the total length of the entire processing line is 8 × 8 (the area of the silicon substrate) /
0.005 (hatching interval) = 12800 mm. Under the above processing conditions, processing was performed by one-way polishing (see FIG. 1C) and two-way polishing (see FIG. 1D) while changing the irradiation angle θ of the laser beam.
【００１６】つぎに比較例として、短焦点レンズを用い
てレーザビームの焦点距離を５０ｍｍ（拡がり角度約３
０度）とし、図９に示すような従来法で、レーザビーム
の側面を薄膜表面に当てた状態で、テーブルをレーザビ
ームと直角に移動しながら加工した。他の条件は実施例
の場合と同じにした。前記実施例の方法で加工した後、
表面粗度計により表面粗度を測定した。その結果を表１
に示す。Next, as a comparative example, using a short focus lens, the focal length of the laser beam was set to 50 mm (the spread angle was about 3 mm).
0 °), and the table was moved by a conventional method as shown in FIG. 9 while moving the table at right angles to the laser beam while the side surface of the laser beam was in contact with the thin film surface. Other conditions were the same as in the example. After processing by the method of the above embodiment,
The surface roughness was measured with a surface roughness meter. Table 1 shows the results.
Shown in
【００１７】[0017]
【表１】 [Table 1]
【００１８】なお実施例の照射角を１０度にして、４回
研磨の条件で研磨した場合の顕微鏡写真に基づく表面粗
度曲線を図６Ｂに示し、その表面の顕微鏡写真に基づく
模式的斜視図を図７に示す。上記の結果から、実施例の
方法では１方向研磨でも表面粗度がもとのＲａ＝５．
８、Ｒｍａｘ＝４５．０から、Ｒａ＝２．３〜５．０、
Ｒｍａｘ＝１５．５〜４０．１と顕著な平滑化がなされ
たことがわかる。また照射角度θは小さいほうが好まし
く、４５度以下、とくに１〜２０度程度が好ましいこと
がわかる。さらに１方向研磨よりも２方向研磨の方が表
面粗度をほぼ半減させ、一層の平滑化が達成されること
がわかる。FIG. 6B shows a surface roughness curve based on a micrograph when polishing was performed under the conditions of four times polishing at an irradiation angle of 10 degrees in the example, and a schematic perspective view based on the micrograph of the surface is shown. Is shown in FIG. From the above results, in the method of the embodiment, the surface roughness was Ra = 5.
8, from Rmax = 45.0, Ra = 2.3 to 5.0,
Rmax = 15.5 to 40.1, which indicates that remarkable smoothing was performed. It is also understood that the smaller the irradiation angle θ is, the smaller the angle is, preferably 45 degrees or less, and particularly preferably about 1 to 20 degrees. Further, it can be seen that the surface roughness is almost halved in the two-way polishing compared to the one-way polishing, and further smoothing is achieved.
【００１９】ちなみに従来例の方法では、同等の研磨粗
度を得るためには、加工時間は本発明の約４倍を要し
た。Incidentally, in the method of the prior art, the processing time required about four times as long as that of the present invention to obtain the same polishing roughness.
【００２０】以上の結果より、本発明のレーザビームの
焦点を加工対象面上を走査させる方法は、従来のレーザ
ビームの側面を当てる方法に比してはるかに効率的に研
磨加工ができることがわかる。From the above results, it can be understood that the method of scanning the focal point of the laser beam on the surface to be processed according to the present invention can perform polishing much more efficiently than the conventional method in which the side of the laser beam is focused. .
【００２１】前記本発明の方法で研磨したダイヤモンド
製品は、たとえば一辺３ｍｍの正三角形に切断して図８
に示す切削バイト２０用のスローアウェーチップ２１な
ど、種々の切削工具に好適に使用しうる。このものは硬
度が高い析出面を切削面として用いることができるの
で、切れ味および耐久性が高い利点がある。The diamond product polished by the method of the present invention is cut into a regular triangle having a side of 3 mm, for example, as shown in FIG.
It can be suitably used for various cutting tools such as the throw-away tip 21 for the cutting tool 20 shown in FIG. This has the advantage that the sharpness and durability are high because the precipitation surface having high hardness can be used as the cutting surface.
【００２２】[0022]
【発明の効果】本発明の方法はエネルギ密度の高い焦点
を研磨対象物の表面に沿って走査するので、加工効率を
従来の４倍程度にすることができる。本発明の装置は前
記方法を効率的に実施することができる。本発明のダイ
ヤモンド製品および切削工具は、気相合成法によるダイ
ヤモンド薄膜のうち硬度が高い析出面を外表面に用いる
ので、耐久性や切れ味が高い利点がある。According to the method of the present invention, since the focal point having a high energy density is scanned along the surface of the object to be polished, the processing efficiency can be made about four times that of the conventional method. The device of the present invention can efficiently perform the above method. ADVANTAGE OF THE INVENTION Since the diamond product and cutting tool of this invention use the precipitation surface with high hardness among the diamond thin films by a vapor phase synthesis method for an outer surface, there exists an advantage with high durability and sharpness.
【図１】本発明の方法の一実施例を示す工程説明図であ
る。FIG. 1 is a process explanatory view showing one embodiment of the method of the present invention.
【図２】図１のａ工程の拡大図である。FIG. 2 is an enlarged view of a step a in FIG. 1;
【図３】本発明の装置の一実施例を示す全体配置図であ
る。FIG. 3 is an overall layout view showing one embodiment of the apparatus of the present invention.
【図４】本発明の装置にかかわるテーブルの一実施例を
示す斜視図である。FIG. 4 is a perspective view showing one embodiment of a table relating to the apparatus of the present invention.
【図５】図５ａは本発明のダイヤモンド製品の一実施例
を示す加工前の断面図、図５ｂはその加工後の断面図で
ある。FIG. 5A is a cross-sectional view showing an embodiment of the diamond product of the present invention before processing, and FIG. 5B is a cross-sectional view after the processing.
【図６】図６Ａおよび図６Ｂはそれぞれ本発明の方法で
研磨する前および研磨後のダイヤモンド薄膜の表面状態
を示す拡大断面図である。6A and 6B are enlarged cross-sectional views showing the surface state of a diamond thin film before and after polishing by the method of the present invention, respectively.
【図７】本発明の方法で研磨したダイヤモンド薄膜表面
の模式的斜視図である。FIG. 7 is a schematic perspective view of a diamond thin film surface polished by the method of the present invention.
【図８】本発明の切削工具の一実施例を示す斜視図であ
る。FIG. 8 is a perspective view showing an embodiment of the cutting tool of the present invention.
【図９】従来の研磨方法を示す概略図である。FIG. 9 is a schematic view showing a conventional polishing method.
１・・・ダイヤモンド ２・・・シリコン基板 ３・・・表面 ６・・・レーザビーム ７・・・焦点 ９・・・ガルバノミラー １１・・・レーザ発生源 １２・・・電源ボックス １３・・・制御装置 １４・・・テーブル １６・・・ターンテーブル DESCRIPTION OF SYMBOLS 1 ... Diamond 2 ... Silicon substrate 3 ... Surface 6 ... Laser beam 7 ... Focus 9 ... Galvano mirror 11 ... Laser generation source 12 ... Power supply box 13 ... Controller 14 ・ ・ ・ Table 16 ・ ・ ・ Turntable
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｂ２８Ｄ 5/00 Ｂ２８Ｄ 5/00 Ｚ Ｃ３０Ｂ 29/04 Ｃ３０Ｂ 29/04 Ｖ 33/00 33/00 (56)参考文献 特開 平３−272810（ＪＰ，Ａ) 特開 平４−331800（ＪＰ，Ａ) 特開 平６−40797（ＪＰ，Ａ) 特開 平２−15625（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) B23K 26/00 - 26/38 B24B 9/16 B28D 5/00 C30B 29/04 C30B 33/00 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI B28D 5/00 B28D 5/00 Z C30B 29/04 C30B 29/04 V 33/00 33/00 (56) References JP 3-272810 (JP, A) JP-A-4-331800 (JP, A) JP-A-6-40797 (JP, A) JP-A-2-15625 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) B23K 26/00-26/38 B24B 9/16 B28D 5/00 C30B 29/04 C30B 33/00
Claims (8)
辺に焦点を結ぶようにレーザを斜め方向から照射し、レ
ーザの焦点をダイヤモンドの表面上を走査すると共にダ
イヤモンドをずらせるようにして両者に相対的に運動を
与えるようにして、レーザの焦点でダイヤモンド表面に
形成された凸部を除去するようにしたダイヤモンドのレ
ーザ研磨方法。1. A laser is applied obliquely to the surface of a diamond so as to focus on the vicinity of the surface, and the laser is scanned on the surface of the diamond and the diamond is shifted so that the diamond is shifted relative to both surfaces. A laser polishing method for diamond in which a convex portion formed on a diamond surface is removed at a focal point of a laser so as to give a dynamic movement.
よって、２方向の研磨をする請求項１記載の方法。2. The method of claim 1, wherein the polishing is performed in two directions by rotating the diamond at right angles.
て、うず巻状の研磨をする請求項１記載の方法。3. The method according to claim 1, wherein the spiral polishing is performed by rotating the diamond.
るための装置であって、ダイヤモンドを備えた加工対象
物を載置するテーブルと、該テーブルに対し、斜め方向
からレーザを照射するように、かつ加工対象物の表面に
焦点を結ぶように配置したレーザ照射源と、前記テーブ
ルにテーブルの表面に平行の一次元の運動を生じさせる
テーブル駆動装置と、前記レーザの照射方向を揺動させ
ることにより焦点を走査し、その焦点でダイヤモンド表
面に形成された凸部を除去するようにしたレーザ照射源
駆動装置とを備えたレーザ研磨装置。4. An apparatus for carrying out the method according to claim 1, wherein a table on which a workpiece having diamond is placed is irradiated with a laser from an oblique direction. Laser irradiation source arranged so as to focus on the surface of the object to be processed, a table driving device that causes the table to generate a one-dimensional movement parallel to the surface of the table, and the irradiation direction of the laser. A laser polishing apparatus comprising: a laser irradiation source driving device configured to scan a focal point by swinging the laser beam and remove a convex portion formed on the diamond surface at the focal point.
復運動をさせるものである請求項４記載の装置。5. The apparatus according to claim 4, wherein the table driving device reciprocates the table.
表面に対して垂直な軸まわりに回転駆動させるものであ
り、前記レーザ照射源駆動装置がレーザの焦点を半径方
向に走査するものである請求項４記載の装置。6. The table driving device for driving the table to rotate about an axis perpendicular to the surface thereof, and the laser irradiation source driving device scans a focal point of the laser in a radial direction. An apparatus according to claim 4.
れたダイヤモンド薄膜とからなり、該ダイヤモンド薄膜
の外側の折出面が請求項１、２または３記載の方法で平
滑に研磨されてなるダイヤモンド製品。7. A method according to claim 1, comprising a substrate and a diamond thin film formed on the substrate by a vapor phase synthesis method, wherein the bent out surface of the diamond thin film is polished smoothly by the method according to claim 1, 2 or 3. Diamond products.
磨面が外側になるように取り付けた切削工具。8. A cutting tool to which the diamond product according to claim 7 is attached so that a polished surface is outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04351759A JP3096943B2 (en) | 1992-12-07 | 1992-12-07 | Laser polishing method and apparatus for diamond and diamond product using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04351759A JP3096943B2 (en) | 1992-12-07 | 1992-12-07 | Laser polishing method and apparatus for diamond and diamond product using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06170571A JPH06170571A (en) | 1994-06-21 |
| JP3096943B2 true JP3096943B2 (en) | 2000-10-10 |
Family
ID=18419418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04351759A Expired - Fee Related JP3096943B2 (en) | 1992-12-07 | 1992-12-07 | Laser polishing method and apparatus for diamond and diamond product using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3096943B2 (en) |
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| JP2012148398A (en) * | 2010-12-26 | 2012-08-09 | Mitsubishi Materials Corp | Carbon film-coated end mill and manufacturing method therefor |
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| WO2023091054A1 (en) * | 2021-11-17 | 2023-05-25 | Общество С Ограниченной Ответственностью "Вандер Технолоджис" | Method for multi-beam laser polishing of a diamond surface |
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| Publication number | Publication date |
|---|---|
| JPH06170571A (en) | 1994-06-21 |
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