JP3045236B1 - Wafer polishing apparatus with polishing cloth conditioner - Google Patents
Wafer polishing apparatus with polishing cloth conditionerInfo
- Publication number
- JP3045236B1 JP3045236B1 JP873999A JP873999A JP3045236B1 JP 3045236 B1 JP3045236 B1 JP 3045236B1 JP 873999 A JP873999 A JP 873999A JP 873999 A JP873999 A JP 873999A JP 3045236 B1 JP3045236 B1 JP 3045236B1
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- conditioner
- polishing cloth
- wafer
- cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【要約】
【課題】 コンディショニング処理されたウェハの研磨
布の表面の調整状態を常に同じに定量的に管理すること
ができる。
【解決手段】 本発明の研磨布コンディショナを備えた
ウェハ研磨装置は、研磨布コンディショナ５が研磨布４
の表面を調整する際に、該コンディショナに加わる摩擦
力を検出する検出装置を備えている。これは、研磨布と
ヘッド部９の作用面との摩擦力によってコンディショナ
は横方向の力を受けて平衡バネ７が撓み、この撓みをコ
ア１２の相対位置の変化で検出し、摩擦力を検出してい
る。この摩擦力が一定値以内になるようにして、研磨布
の表面状態を管理する。The condition of the conditioning of the surface of the polishing pad of a conditioned wafer can be constantly and quantitatively managed. SOLUTION: In the wafer polishing apparatus provided with the polishing cloth conditioner of the present invention, the polishing cloth conditioner 5 has a polishing cloth 4
And a detecting device for detecting a frictional force applied to the conditioner when adjusting the surface of the conditioner. This is because the conditioner receives lateral force due to the frictional force between the polishing cloth and the working surface of the head portion 9 and the equilibrium spring 7 bends. This bending is detected by a change in the relative position of the core 12, and the frictional force is detected. Detected. The surface condition of the polishing pad is controlled so that the frictional force falls within a certain value.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＳＩの多層化さ
れた金属配線構造の形状に必要となる層間絶縁膜の平坦
化、金属プラグ形成および埋め込み金属配線の形成に用
いられる化学的機械的研磨（ケミカルメカニカルポリシ
ング、以下ＣＭＰと称する）法によってウェハを研磨す
る研磨布コンディショナを備えたウェハ研磨装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to chemical mechanical polishing used for flattening an interlayer insulating film, forming a metal plug and forming a buried metal wiring required for the shape of a multilayer metal wiring structure of an LSI. The present invention relates to a wafer polishing apparatus provided with a polishing cloth conditioner for polishing a wafer by a chemical mechanical polishing (hereinafter, referred to as CMP) method.
【０００２】[0002]
【従来の技術】近年、ＬＳＩの高集積化、高性能化のた
めに様々な微細加工技術が開発・研究されており、その
一つとしてＣＭＰが注目されている。ＣＭＰは、研磨剤
（スラリー）と被研磨体との間の化学的作用と、研磨剤
中の研磨粒子の機械作用とを複合した研磨技術であり、
被研磨面に形成される変質層が小さく、研磨速度が速い
という特徴を有することから、半導体の製造工程、特に
多層配線形成工程における層間絶縁膜の平坦化、金属プ
ラグ形成、埋め込み金属配線形成において、重要な技術
となっている。2. Description of the Related Art In recent years, various microfabrication techniques have been developed and studied for high integration and high performance of LSIs, and CMP has received attention as one of them. CMP is a polishing technique that combines a chemical action between an abrasive (slurry) and an object to be polished and a mechanical action of abrasive particles in the abrasive.
Since the deteriorated layer formed on the surface to be polished is characterized by a small size and a high polishing rate, it is used in the semiconductor manufacturing process, particularly in the flattening of the interlayer insulating film, the formation of metal plugs, and the formation of buried metal wires in the multilayer wiring formation process. , Has become an important technology.
【０００３】ＣＭＰ法によるウェハ研磨装置は、表面に
研磨布（研磨パッド）が貼布された円盤状の研磨定盤
（プラテン）と、研磨するウェハの一面を保持して研磨
布にウェハの他面を当接させる複数のウェハ保持ヘッド
と、これらのウェハ保持ヘッドを研磨定盤に対し相対回
転させるヘッド駆動機構とを備え、研磨布とウェハの間
に研磨粒子を含む研磨剤を供給することにより、ウェハ
の研磨を行うことが、従来より広く行われている。A wafer polishing apparatus based on the CMP method includes a disc-shaped polishing platen (platen) having a polishing pad (polishing pad) adhered to a surface thereof, and a polishing pad holding one surface of a wafer to be polished and a polishing pad having another surface. A plurality of wafer holding heads for bringing the surfaces into contact with each other, and a head drive mechanism for rotating these wafer holding heads relative to the polishing platen, and supplying an abrasive containing abrasive particles between the polishing cloth and the wafer; Therefore, polishing of a wafer has been widely performed.
【０００４】この研磨布は、一般に弾性のあるポリウレ
タン等で作られ、研磨作業に伴って、この研磨布の表面
も摩耗又は目詰り等が起きて劣化、平滑化し、研磨効率
が悪化する。そこで従来より、研磨布の交換作業を容易
にしたものとして、特公平２−３０８２７号公報に記載
された装置が知られている。この装置は、磨きプラテン
（定盤回転台）に設けられたピンを磨きパッド（研磨
布）が接着されたキャリアプラテン（研磨定盤）の孔に
挿入することによって、キャリアプラテンを保持して磨
きパッドの劣化に伴う交換作業を容易にしている。The polishing cloth is generally made of elastic polyurethane or the like, and the surface of the polishing cloth is worn or clogged with the polishing operation, so that the polishing cloth is deteriorated and smoothed, and the polishing efficiency is deteriorated. Therefore, a device described in Japanese Patent Publication No. 2-30827 has been conventionally known as one which facilitates the work of replacing the polishing cloth. This apparatus holds and polish a carrier platen by inserting pins provided on a polishing platen (platen turntable) into holes of a carrier platen (polishing platen) to which a polishing pad (polishing cloth) is adhered. The replacement work accompanying the deterioration of the pad is facilitated.
【０００５】しかしながら新しい研磨布に交換した場
合、研磨布の表面が研磨剤に馴染んでおらず、新しい研
磨布とある程度研磨を行った研磨布では研磨状態が異な
り、研磨後のウェハの状態に差が生じる。このような状
態を回避するため、新しい研磨布に交換した場合には、
ある程度の時間ダミーウェハを研磨して研磨布の表面を
調整する初期化処理を行っている。However, when the polishing pad is replaced with a new polishing pad, the surface of the polishing pad is not adapted to the polishing agent, and the polishing state is different between the new polishing pad and the polishing pad which has been polished to a certain extent. Occurs. To avoid such a situation, when replacing with a new polishing cloth,
An initialization process is performed to adjust the surface of the polishing pad by polishing the dummy wafer for a certain period of time.
【０００６】また従来より、研磨作業による研磨布表面
の摩耗や研磨屑の付着又は研磨剤による目詰り等の対策
として、特許第２８１５３４９号公報に記載された装置
等の研磨布表面を調整する研磨布調整処理を行ってい
る。この公報に記載の装置は、パッドコンディショナを
備えていて、コンディショニング時に該パッドコンディ
ショナのコンディショニング工具を高周波振動又は超音
波振動させてパッド（研磨布）を接触させることによ
り、パッドの目詰りを除去するものである。このような
初期化処理や研磨布調整処理を一般に研磨布のコンディ
ショニング処理と呼んでおり、このコンディショニング
処理のために回転する研磨布の表面に接触する装置をコ
ンディショナと呼んでいる。Conventionally, as a countermeasure against abrasion of the polishing cloth surface due to a polishing operation, adhesion of polishing debris, or clogging by an abrasive, polishing of a polishing cloth surface such as an apparatus described in Japanese Patent No. 2815349 is performed. A cloth adjustment process is being performed. The device described in this publication is provided with a pad conditioner. At the time of conditioning, a pad (polishing cloth) is brought into contact with a conditioning tool of the pad conditioner by high-frequency vibration or ultrasonic vibration to reduce clogging of the pad. It is to be removed. Such initialization processing and polishing cloth adjustment processing are generally called conditioning processing of the polishing cloth, and a device that comes into contact with the surface of the polishing cloth that rotates for the conditioning processing is called a conditioner.
【０００７】[0007]
【発明が解決しようとする課題】上記のように、ＣＭＰ
による研磨装置ではコンディショナによる研磨布のコン
ディショニング処理を行う必要があるが、このコンディ
ショニング処理された研磨布の表面の調整状態（ドレス
状態）は、コンディショニング処理の時間（ドレス時
間）と実際にウェハを加工したときのウェハ表面の加工
状況で管理していた。しかしながら、この方法は、経験
からこのドレス時間、例えば２分間又は５分間等を出し
ていたため、常に同じに研磨布の表面を保つのが困難で
あった。またドレス状態が一定でないと研磨率が一定せ
ず、ウェハの表面の加工状況が均一にならない等の問題
があった。SUMMARY OF THE INVENTION As described above, CMP
It is necessary to carry out conditioning processing of the polishing cloth by a conditioner in the polishing apparatus according to the present invention. However, the condition (dressing state) of the surface of the conditioned polishing cloth depends on the conditioning processing time (dressing time) and the actual wafer. It was managed based on the processing status of the wafer surface at the time of processing. However, according to this method, the dressing time, for example, 2 minutes or 5 minutes, is given from experience, so that it is difficult to keep the surface of the polishing cloth always the same. In addition, if the dress state is not constant, there is a problem that the polishing rate is not constant and the processing state of the wafer surface is not uniform.
【０００８】本発明は、上記の問題に鑑みてなされたも
のであり、従来の定性的な管理に代えて、コンディショ
ニング処理された研磨布の表面の調整状態を常に同じに
定量的に管理することができることを目的とする。更に
本発明は、研磨布コンディショナ及び研磨布の劣化を管
理することを目的とする。[0008] The present invention has been made in view of the above problems, and instead of the conventional qualitative management, the condition of the conditioning of the conditioned polishing pad is always quantitatively managed in the same manner. The purpose is to be able to. Still another object of the present invention is to control the deterioration of the polishing cloth conditioner and the polishing cloth.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記課題を解
決するための手段として特許請求の範囲の各請求項に記
載された研磨布コンディショナを備えたウェハ研磨装置
を提供する。請求項１に記載の研磨布コンディショナを
備えたウェハ研磨装置は、研磨布のコンディショニング
中に研磨布コンディショナに加わる摩擦力を検出する検
出装置を研磨布コンディショナに設けたものであり、こ
れにより研磨布の表面の調整状態を定量的に監視でき、
管理を容易にしている。According to the present invention, there is provided a wafer polishing apparatus provided with a polishing cloth conditioner described in each claim as means for solving the above-mentioned problems. A wafer polishing apparatus provided with the polishing cloth conditioner according to claim 1, wherein a detection device for detecting a frictional force applied to the polishing cloth conditioner during conditioning of the polishing cloth is provided in the polishing cloth conditioner. By this, the adjustment state of the polishing cloth surface can be monitored quantitatively,
Makes management easier.
【００１０】請求項２に記載の該装置は、検出装置とし
て差動トランスを使用したものであり、請求項１の該装
置と同様の効果を奏する。請求項３に記載の該装置は、
検出装置からの検出値を一定値以内に収めるようにし
て、コンディショニング後の研磨布の表面の状態を常に
同じ状態に管理できるようにしたものである。According to a second aspect of the present invention, a differential transformer is used as a detecting device, and the same effect as that of the first aspect is obtained. The device according to claim 3,
The state of the surface of the polishing pad after the conditioning can be always maintained in the same state by keeping the detection value from the detecting device within a certain value.
【００１１】請求項４に記載の該装置は、研磨布コンデ
ィショナの使用時間と検出装置の検出値が一定になるま
でのコンディショニング時間とを管理することによっ
て、研磨布コンディショナの劣化をも定量的に監視する
ことができるようにしている。請求項５に記載の該装置
は、研磨布の使用時間と検出装置の検出値が一定になる
までのコンディショニング時間とを管理することによっ
て、研磨布の劣化をも定量的に監視することができるよ
うにしている。According to the present invention, the deterioration of the polishing pad conditioner can be quantified by managing the use time of the polishing pad conditioner and the conditioning time until the detection value of the detecting device becomes constant. So that they can be monitored. The apparatus according to claim 5 can quantitatively monitor the deterioration of the polishing cloth by managing the use time of the polishing cloth and the conditioning time until the detection value of the detection apparatus becomes constant. Like that.
【００１２】請求項６に記載の該装置は、請求項３〜５
記載の研磨布の表面状態、研磨布及び研磨布コンディシ
ョナの劣化状態の三者を定量的に監視できるようにした
ものである。The device according to claim 6 is the device according to claims 3 to 5.
The surface condition of the polishing cloth and the deterioration state of the polishing cloth and the polishing cloth conditioner described above can be quantitatively monitored.
【００１３】[0013]
【発明の実施の形態】以下本発明の実施の形態の研磨布
コンディショナを備えたウェハ研磨装置を説明する。図
１は、コンディショニング中における研磨布コンディシ
ョナの縦断面図である。モータ１により回転する定盤回
転台２の上には研磨定盤３が着脱自在に取り付けられ、
定盤回転台２と一緒に回転する。研磨定盤３の上面に
は、弾性のあるポリウレタン等で作られた研磨布４が貼
り付けられている。ウェハの研磨作業においては、回転
する研磨定盤３の研磨布４の上に、図示していないノズ
ルから研磨剤（スラリー）が供給されると共に、同じく
図示していないウェハ保持ヘッドが、研磨するウェハを
保持して研磨布４に所定の圧力で押し付けながら回転し
て、ウェハの表面を研磨する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A wafer polishing apparatus provided with a polishing cloth conditioner according to an embodiment of the present invention will be described below. FIG. 1 is a vertical cross-sectional view of the polishing pad conditioner during conditioning. A polishing platen 3 is detachably mounted on a platen turntable 2 rotated by a motor 1,
It rotates together with the turntable 2. A polishing cloth 4 made of elastic polyurethane or the like is attached to the upper surface of the polishing platen 3. In a wafer polishing operation, an abrasive (slurry) is supplied from a nozzle (not shown) onto a polishing cloth 4 of a rotating polishing table 3, and a wafer holding head (not shown) also performs polishing. The wafer is held and rotated while being pressed against the polishing pad 4 with a predetermined pressure to polish the surface of the wafer.
【００１４】このウェハの研磨作業により、研磨布４の
表面が摩耗したり、目詰り等を起こして劣化したとき
に、ウェハ保持ヘッドが退去して研磨作業が停止し、次
いで研磨布コンディショナ５が研磨布４の上面に移動し
てきて、研磨布のコンディショニング作業が行われる。
この状態が図１に示されている。該コンディショナ５
は、回転軸６と平衡バネ７を介して接続され、モータ８
の回転に伴い回転する。また該コンディショナ５は、ヘ
ッド部９と本体部１０の２つの部分からなり、これらは
互いにフック状に係合され、ヘッド部９の自重で本体部
１０に従動して回転するようになっている。When the surface of the polishing pad 4 is worn or clogged and deteriorated by the polishing operation of the wafer, the wafer holding head retreats to stop the polishing operation, and then the polishing pad conditioner 5 Moves to the upper surface of the polishing cloth 4, and the conditioning operation of the polishing cloth is performed.
This state is shown in FIG. The conditioner 5
Is connected to a rotating shaft 6 via a balance spring 7 and a motor 8
It rotates with the rotation of. The conditioner 5 is composed of two parts, a head part 9 and a main body part 10, which are engaged with each other in a hook shape and rotate following the main body part 10 by the weight of the head part 9. I have.
【００１５】ヘッド部９のコンディショニング作用面に
は、ダイヤモンドが電着されている。本体部１０には、
コア１２を保持するためのホルダー１１が、その上面に
設けられている。一方、平衡バネ７の中心部が開口され
ており、ここにボビン１３が設けられ、ホルダー１１に
保持されたコア１２とで差動トランスを構成し、コンデ
ィショニング作業において、研磨布４とヘッド部９の作
用面との摩擦力によってコンディショナ５は横方向の力
を受けて平衡バネ７が撓み、この撓みをコア１２の相対
位置の変化で検出し、摩擦力を検出できるようになって
いる。そして、この摩擦力がある一定値、例えば５％以
内に入るまで、コンディショニング作業を行う。これに
より均一な研磨布の表面状態が得られる。Diamond is electrodeposited on the conditioning action surface of the head 9. The main body 10 includes
A holder 11 for holding the core 12 is provided on an upper surface thereof. On the other hand, a center portion of the balance spring 7 is opened, a bobbin 13 is provided here, and a differential transformer is constituted by the core 12 held by the holder 11. In the conditioning operation, the polishing cloth 4 and the head portion 9 are formed. The conditioner 5 receives a lateral force due to a frictional force with the action surface of the first member, and the equilibrium spring 7 bends. The bending is detected by a change in the relative position of the core 12, so that the frictional force can be detected. Then, the conditioning operation is performed until the friction force falls within a certain value, for example, within 5%. As a result, a uniform surface state of the polishing pad can be obtained.
【００１６】更にまた、例えばモータ１及び８の積算回
転数や時間管理等により、研磨布コンディショナ５及び
研磨布４の使用時間や、一定の摩擦力になるまでのコン
ディショニング作業時間をコンピュータに入力して、該
コンディショナ５及び研磨布の劣化を割り出し管理する
ことも可能である。Furthermore, the operating time of the polishing pad conditioner 5 and the polishing pad 4 and the conditioning operation time until a constant frictional force is input to the computer by, for example, managing the accumulated number of revolutions of the motors 1 and 8 and time management. Thus, the deterioration of the conditioner 5 and the polishing pad can be determined and managed.
【００１７】なお上記した本発明の実施の形態の研磨布
コンディショナ５では、摩擦力の検出機構として、差動
トランスを用いているが、他に圧電素子、ロードセル、
容量センサ等の検出機構を採用することも可能であり、
要は変位検出器であればよい。In the polishing cloth conditioner 5 according to the embodiment of the present invention, a differential transformer is used as a frictional force detecting mechanism.
It is also possible to adopt a detection mechanism such as a capacitance sensor,
In short, any displacement detector may be used.
【００１８】以上説明したように、本発明の研磨布コン
ディショナを備えたウェハ研磨装置は、従来、定性的に
経験上から研磨布のコンディショニング作業時間を決め
ていたものを、研磨布表面の摩擦力を検出することによ
り、研磨布の表面の調整状態を定量的に知ることがで
き、コンディショニング後の研磨布の表面の状態を常に
同じ状態に加工できる。更にまた、研磨布コンディショ
ナや研磨布の劣化を正確に知ることができ、これらの交
換の管理が容易である。As described above, the wafer polishing apparatus provided with the polishing cloth conditioner of the present invention is a qualitatively empirically-determined polishing cloth conditioning work time. By detecting the force, the adjustment state of the surface of the polishing pad can be quantitatively known, and the state of the surface of the polishing pad after conditioning can always be processed to the same state. Furthermore, the deterioration of the polishing cloth conditioner and the polishing cloth can be accurately known, and the replacement of these can be easily managed.
【図１】本発明の実施の形態の研磨布コンディショナの
縦断面図である。FIG. 1 is a longitudinal sectional view of a polishing cloth conditioner according to an embodiment of the present invention.
１，８…モータ ３…研磨定盤 ４…研磨布 ５…研磨布コンディショナ ６…回転軸 ７…平衡バネ ９…ヘッド部 １０…本体部 １１…ホルダー １２…コア １３…ボビン 1,8 ... motor 3 ... polishing platen 4 ... polishing cloth 5 ... polishing cloth conditioner 6 ... rotary shaft 7 ... balance spring 9 ... head part 10 ... body part 11 ... holder 12 ... core 13 ... bobbin
Claims (6)
ウェハの研磨を行うウェハ研磨装置の研磨定盤の表面に
設けられた研磨布の状態を調整する研磨布コンディショ
ナを備えたウェハ研磨装置において、 前記研磨布コンディショナが、研磨布の表面を調整する
際に、前記研磨布コンディショナに加わる摩擦力を検出
する検出装置を備えていることを特徴とする研磨布コン
ディショナを備えたウェハ研磨装置。1. A wafer polishing apparatus having a polishing cloth conditioner for adjusting a state of a polishing cloth provided on a surface of a polishing platen of a wafer polishing apparatus for polishing a wafer by a chemical mechanical polishing (CMP) method. In the above, a wafer provided with a polishing cloth conditioner, wherein the polishing cloth conditioner includes a detection device for detecting a frictional force applied to the polishing cloth conditioner when adjusting a surface of the polishing cloth. Polishing equipment.
とを特徴とする請求項１に記載の研磨布コンディショナ
を備えたウェハ研磨装置。2. The wafer polishing apparatus according to claim 1, wherein the detection device comprises a differential transformer.
定の一定値内に収まるようにして研磨布表面の状態を管
理する手段を設けたことを特徴とする請求項１又は２に
記載の研磨布コンディショナを備えたウェハ研磨装置。3. The apparatus according to claim 1, further comprising means for managing the state of the surface of the polishing pad so that the numerical value detected by the detecting device falls within a predetermined constant value. Wafer polishing apparatus equipped with a polishing cloth conditioner.
と、前記検出装置から検出された数値が所定の一定値に
なるまでのコンディショニングの時間とによって、前記
研磨布コンディショナの劣化を割り出し管理する手段を
設けたことを特徴とする請求項１〜３のいずれか１項に
記載の研磨布コンディショナを備えたウェハ研磨装置。4. A means for determining and managing deterioration of the polishing pad conditioner based on a use time of the polishing pad conditioner and a conditioning time until a numerical value detected by the detection device becomes a predetermined constant value. A wafer polishing apparatus provided with the polishing pad conditioner according to claim 1.
から検出された数値が所定の一定値になるまでのコンデ
ィショニングの時間とによって、前記研磨布の劣化を割
り出し管理する手段を設けたことを特徴とする請求項１
〜４のいずれか１項に記載の研磨布コンディショナを備
えたウェハ研磨装置。5. A means for determining and managing deterioration of the polishing cloth based on a use time of the polishing cloth and a conditioning time until a numerical value detected by the detection device becomes a predetermined constant value. Claim 1 characterized by the following:
A wafer polishing apparatus provided with the polishing cloth conditioner according to any one of claims 4 to 4.
の一定値内に収まるようにして研磨布表面の状態を管理
する手段と、前記研磨布コンディショナの使用時間と、
前記研磨布の使用時間及び前記検出装置から検出された
数値が所定の一定値になるまでのコンディショニングの
時間とによって、前記研磨布コンディショナ及び研磨布
の劣化を割り出し管理手段を設けたことを特徴とする請
求項１又は２に記載の研磨布コンディショナを備えたウ
ェハ研磨装置。6. A means for managing a state of a polishing cloth surface so that a numerical value detected by the detecting device falls within a predetermined constant value, a use time of the polishing cloth conditioner,
A management means for determining deterioration of the polishing pad conditioner and the polishing pad based on a usage time of the polishing pad and a conditioning time until a numerical value detected by the detection device becomes a predetermined constant value is provided. A wafer polishing apparatus comprising the polishing cloth conditioner according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873999A JP3045236B1 (en) | 1999-01-18 | 1999-01-18 | Wafer polishing apparatus with polishing cloth conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873999A JP3045236B1 (en) | 1999-01-18 | 1999-01-18 | Wafer polishing apparatus with polishing cloth conditioner |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP3045236B1 true JP3045236B1 (en) | 2000-05-29 |
| JP2000202758A JP2000202758A (en) | 2000-07-25 |
Family
ID=11701327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP873999A Expired - Fee Related JP3045236B1 (en) | 1999-01-18 | 1999-01-18 | Wafer polishing apparatus with polishing cloth conditioner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3045236B1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
| JP4072810B2 (en) * | 2001-01-19 | 2008-04-09 | 株式会社荏原製作所 | Dressing apparatus and polishing apparatus provided with the dressing apparatus |
| DE60121292T2 (en) * | 2001-04-02 | 2007-07-05 | Infineon Technologies Ag | Method of conditioning the surface of a polishing pad |
| JP2004142083A (en) | 2002-10-28 | 2004-05-20 | Elpida Memory Inc | Wafer polishing device and wafer polishing method |
| KR100840203B1 (en) * | 2006-12-19 | 2008-06-23 | 김동순 | The evaporato for beekeep |
| JP2016004903A (en) | 2014-06-17 | 2016-01-12 | 株式会社東芝 | Polishing apparatus, polishing method and semiconductor device manufacturing method |
| US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
-
1999
- 1999-01-18 JP JP873999A patent/JP3045236B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000202758A (en) | 2000-07-25 |
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