JP3041990B2 - Single crystal growing method and apparatus - Google Patents
Single crystal growing method and apparatusInfo
- Publication number
- JP3041990B2 JP3041990B2 JP3045288A JP4528891A JP3041990B2 JP 3041990 B2 JP3041990 B2 JP 3041990B2 JP 3045288 A JP3045288 A JP 3045288A JP 4528891 A JP4528891 A JP 4528891A JP 3041990 B2 JP3041990 B2 JP 3041990B2
- Authority
- JP
- Japan
- Prior art keywords
- oxygen concentration
- single crystal
- crucible
- reaction vessel
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本願発明は、単結晶中の酸素濃度
を均一化させる単結晶育成方法及び該単結晶育成方法の
実施に適した単結晶育成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a single crystal for making the concentration of oxygen in a single crystal uniform, and a single crystal growing apparatus suitable for carrying out the method for growing a single crystal.
【０００２】[0002]
【従来の技術】図３は、従来のＣＺ法単結晶製造装置の
概念図であって、１は反応容器、２は石英製のルツボ、
３はヒータを示す。ＣＺ法では、上記ルツボ２内に適当
な大きさの多結晶シリコン（以下、シリコンをＳｉと略
記する。）が投入され、上記ヒータ３からの熱を受けて
固型の多結晶Ｓｉが溶融しＳｉ融液４となされる。上述
のルツボ２は、上下移動用モータ５によって上下移動可
能に、また回転用モータ６はよって水平面内に回転可能
に支持されている。７は保温材を示す。2. Description of the Related Art FIG. 3 is a conceptual diagram of a conventional CZ method single crystal manufacturing apparatus, wherein 1 is a reaction vessel, 2 is a quartz crucible,
Reference numeral 3 denotes a heater. In the CZ method, polycrystalline silicon of an appropriate size (hereinafter, silicon is abbreviated as Si) is charged into the crucible 2 and solid polycrystalline Si is melted by receiving heat from the heater 3. The Si melt 4 is formed. The above-mentioned crucible 2 is supported so as to be able to move up and down by a motor 5 for moving up and down, and the motor 6 for rotation is rotatably supported in a horizontal plane. Reference numeral 7 denotes a heat insulating material.
【０００３】８は引き上げ手段（ワイヤロープを図示す
る）であって、該引き上げ手段８の最下端に種結晶９が
取付けられ、他方、上端部に引き上げ用モータ１０と回
転用モータ１１とが取付けられている。そして、上記種
結晶９をＳｉ融液４の表面に接触させて上記回転用モー
タ１１をルツボ２の回転用モータ６と逆方向に回転させ
ながら、引き上げ用モータ１０を駆動し、種結晶９を１
〜２ｍｍ／ｍｉｎの速度で引き上げていく。かくして種
結晶９の下端面にＳｉが整列して固まり、更に育成され
たＳｉ単結晶１２の下端面に次々とＳｉが整列して固っ
ていき、円柱状のＳｉ単結晶１２が得られる。Reference numeral 8 denotes a pulling means (illustrated by a wire rope). A seed crystal 9 is attached to the lowermost end of the pulling means 8, and a pulling motor 10 and a rotating motor 11 are mounted to the upper end. Have been. Then, while bringing the seed crystal 9 into contact with the surface of the Si melt 4 and rotating the rotation motor 11 in the opposite direction to the rotation motor 6 of the crucible 2, the pulling motor 10 is driven to remove the seed crystal 9. 1
It is pulled up at a speed of about 2 mm / min. Thus, the Si is aligned and solidified on the lower end face of the seed crystal 9, and the Si is successively aligned and hardened on the lower end face of the grown Si single crystal 12, thereby obtaining the columnar Si single crystal 12.
【０００４】ところでＣＺ法に依るＳｉ単結晶製造にお
いては、石英製のルツボ２からＯ2がＳｉ融液４に溶け
込み、酸素が〔Ｏｉ〕としてＳｉ単結晶１２に導入され
る。そしてこの酸素の導入については、歩留りの向上を
図るために、Ｓｉ単結晶１２の軸方向の酸素濃度分布が
一定化されるように留意されている。導入される酸素量
は、Ｓｉ単結晶１２の育成面と酸素との接触頻度に依っ
て定ってくる。従って育成面における酸素濃度及び育成
面と酸素との接触回数が、導入される酸素量を決定する
ファクターとなる。具体的には、酸素濃度が大きくなる
につれ、またルツボ２の回転数が増大するにつれ導入さ
れる酸素量は増える。そして、実操業では、Ｓｉ単結晶
１２が引き上げられるにつれてＳｉ融液４が減少し、系
全体の熱バランスが変化して、Ｓｉ単結晶１２に導入さ
れる酸素量が変化する。In the production of a Si single crystal by the CZ method, O2 is dissolved into a Si melt 4 from a quartz crucible 2 and oxygen is introduced into the Si single crystal 12 as [Oi]. Regarding the introduction of oxygen, care is taken to stabilize the oxygen concentration distribution in the axial direction of the Si single crystal 12 in order to improve the yield. The amount of oxygen introduced depends on the frequency of contact between the growth surface of the Si single crystal 12 and oxygen. Therefore, the oxygen concentration on the growth surface and the number of times of contact between the growth surface and oxygen are factors that determine the amount of oxygen to be introduced. Specifically, the amount of oxygen introduced increases as the oxygen concentration increases and as the number of rotations of the crucible 2 increases. In actual operation, as the Si single crystal 12 is pulled up, the amount of the Si melt 4 decreases, the heat balance of the entire system changes, and the amount of oxygen introduced into the Si single crystal 12 changes.
【０００５】そこで従来は、製造された円柱状のＳｉ単
結晶１２を図４に示すように輪切りにし、この輪切り片
１３の酸素濃度を調べ（酸素濃度サンプリング）、その
結果に基いてルツボ２の回転数に関する経験的な学習曲
線を作成し、該学習曲線に従って、ルツボ２の回転用モ
ータ６の回転数制御を行い、以て導入される酸素量が常
時一定となるように行っていた。Therefore, conventionally, the manufactured columnar Si single crystal 12 is sliced as shown in FIG. 4 and the oxygen concentration of the slice 13 is examined (oxygen concentration sampling). An empirical learning curve related to the number of revolutions is created, and the number of revolutions of the rotation motor 6 of the crucible 2 is controlled according to the learning curve, so that the amount of oxygen introduced is always constant.
【０００６】[0006]
【発明が解決しようとする課題】したがって上記従来法
は、Ｓｉ単結晶１２の育成完了後、Ｓｉ単結晶１２を薄
く輪切りにして試料たる輪切り片１３を得、該輪切り片
１３の酸素濃度を測定し、Ｓｉ単結晶１２の軸方向の濃
度分布を調べているため、実操業中の酸素濃度分布の制
御が測定できない。また、経験的な学習曲線のみに依る
制御（回転用モータ６の回転数制御）は、操業中の急激
な熱バランス変化に対応できないという問題もある。Therefore, in the conventional method, after the growth of the Si single crystal 12 is completed, the Si single crystal 12 is thinly sliced to obtain a slice 13 serving as a sample, and the oxygen concentration of the slice 13 is measured. However, since the axial concentration distribution of the Si single crystal 12 is examined, the control of the oxygen concentration distribution during actual operation cannot be measured. Further, there is a problem that control based on only an empirical learning curve (control of the number of rotations of the rotation motor 6) cannot cope with a rapid change in heat balance during operation.
【０００７】本願第１の発明は、上記問題点を解決した
単結晶育成方法を提案することを目的とし、第２の発明
は上記第１の発明の実施に適した装置を提することを目
的としてなされた。[0007] The first invention of the present application aims to propose a method for growing a single crystal which solves the above problems, and the second invention aims to provide an apparatus suitable for carrying out the first invention. It was made as.
【０００８】[0008]
【課題を解決するための手段】すなわち本願第１の発明
は、ＣＺ法に依るＳｉ単結晶の育成操業中に、ルツボ内
のＳｉ融液中の酸素濃度を検出し、該検出酸素濃度を設
定酸素濃度と対比せしめて、前記検出酸素濃度と設定酸
素濃度との差が所定の許容範囲内にある場合と、その範
囲外の場合とでルツボ回転数に差異を設けるものであ
り、本願第２の発明は、反応容器中のルツボが上下移動
用モータ及び回転用モータを備えている単結晶育成装置
であって、前記反応容器に、Ｓｉ融液中の酸素濃度を検
出するサンプル具が気密調整室を介して取付けられ、前
記サンプル具からの検出信号を受けて前記回転用モータ
を回転制御する制御装置を備えて構成される。In other words, the first invention of the present application is to detect the oxygen concentration in the Si melt in the crucible during the growth operation of the Si single crystal by the CZ method and to set the detected oxygen concentration. In contrast to the oxygen concentration, a difference is set in the crucible rotation speed between a case where the difference between the detected oxygen concentration and the set oxygen concentration is within a predetermined allowable range and a case where the difference is outside the range. The invention of the present invention is a single crystal growing apparatus in which a crucible in a reaction vessel is provided with a motor for moving up and down and a motor for rotation. A control device is provided via a chamber and receives the detection signal from the sample tool and controls the rotation of the rotation motor.
【０００９】[0009]
【作用】上記本願第１の発明に依れば、従来の学習曲線
が問題視される濃度変化があった場合に、回転用モータ
の回転数が変り、この結果、単結晶育成面におけるＯ2
の接触機会が変化し、導入される酸素濃度が常時一定範
囲に均一化される。According to the first aspect of the present invention, when there is a density change that causes a problem with the conventional learning curve, the number of rotations of the rotating motor changes, and as a result, the O2 on the single crystal growing surface changes.
Changes the contact opportunity, and the concentration of oxygen introduced is always uniformed within a certain range.
【００１０】また本願第２の発明に依れば、回転用モー
タが自動的に制御される。According to the second aspect of the present invention, the rotation motor is automatically controlled.
【００１１】[0011]
【実施例】本願第１の発明は、図１において、大略、ル
ツボ２内の検出酸素濃度ｔが、学習曲線に依る設定酸素
濃度ｔｏから許容できる酸素濃度の差ｔａ以上に離れて
いる場合に、ルツボ２の回転数を増減変化させること
を、内容としている。勿論、上記両酸素濃度ｔ、ｔｏの
差が許容できる酸素濃度の差ｔａを越えていない場合に
は、従来通り学習曲線に基いてルツボ２回転用モータ６
を回転制御する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The first invention of the present application will be described with reference to FIG. 1 when the detected oxygen concentration t in the crucible 2 is separated from the set oxygen concentration to based on the learning curve by at least the allowable oxygen concentration difference ta. The content of the method is to increase or decrease the rotation speed of the crucible 2. Of course, if the difference between the two oxygen concentrations t and to does not exceed the allowable oxygen concentration difference ta, the crucible two-rotation motor 6
To control the rotation.
【００１２】すなわち、ルツボ２の高さ位置を検出して
学習曲線により一の設定酸素濃度ｔｏが定まり、後述す
るサンプル具１５によりＳｉ融液４中の検出酸素濃度ｔ
が求められる。そして上記検出酸素濃度ｔが設定酸素濃
度ｔｏよりも小さい場合にはルツボ２の回転用モータ６
の回転数を上げるべきであり、逆に検出酸素濃度ｔが設
定酸素濃度ｔｏよりも大きい場合には回転用モータ６の
回転数を下げるべきである。That is, the height position of the crucible 2 is detected, a set oxygen concentration to is determined by a learning curve, and the detected oxygen concentration t in the Si melt 4 is determined by a sample tool 15 described later.
Is required. When the detected oxygen concentration t is smaller than the set oxygen concentration to, the rotation motor 6 of the crucible 2
Should be increased, and conversely, if the detected oxygen concentration t is higher than the set oxygen concentration to, the rotation speed of the rotation motor 6 should be decreased.
【００１３】しかし実操業においては、ｔ≠ｔｏの場合
に必ずしも回転数を変更させる必要はなく、両酸素濃度
ｔ、ｔｏの差が許容値ｔａを越えている場合にのみ回転
用モータ６の回転数制御を行えばよい。However, in the actual operation, it is not always necessary to change the rotation speed when t ≠ to, and only when the difference between the two oxygen concentrations t and to exceeds the allowable value ta, the rotation of the rotation motor 6 is performed. Numerical control may be performed.
【００１４】具体的には、図２のチャートに示すよう
に、ステップＳ1で設定酸素濃度をｔｏとし、ステップ
Ｓ2でＳｉ融液中の酸素濃度ｔを測定する。ステップＳ3
でｔｏ≧ｔか否かを判定し、ＹＥＳの場合は、ステップ
Ｓ4で、（ｔｏ−ｔ）≧ｔａか否かを判定する。ステッ
プＳ4においてＹＥＳのときは、回転数が増加し、その
増加した後の回転数Ｕupは、Ｕ・（ｔｏ−ｔ）／ｔａと
なる（ステップＳ5）。ここで、Ｕは、経験的な学習に
よって得られた回転数で、予め設定されているものであ
る。ステップＳ4においてＮＯのときは、ＵupはＵとな
る（ステップＳ6）。他方、ステップＳ3において、ｔｏ
≧ｔかの判定がＮＯのときは、ステップＳ7において、
（ｔ−ｔｏ）≧ｔａか否かが判定される。このステップ
Ｓ7においてＹＥＳのときは、回転数が減速し、その減
速した後の回転数Ｕdownは、Ｕ・（ｔ−ｔｏ）／ｔａと
なる（ステップＳ8）。ステップＳ7でＮＯのときは、Ｕ
downはＵとなる（ステップＳ9）。このように補正する
ことにより、Ｓｉ単結晶１２の成育面に導入される酸素
量が均一化される。[0014] Specifically, as shown in the chart of FIG. 2, the set oxygen concentration and to Step S 1, measuring the oxygen concentration t in the Si melt in step S 2. Step S 3
In determining whether-to ≧ t, if YES, the Step S 4, it determines whether the (to-t) ≧ ta. If YES in step S 4, the rotational speed increases, the rotation speed U Stay up-after the increase, the U · (to-t) / ta ( step S 5). Here, U is the number of revolutions obtained by empirical learning and is set in advance. If NO in step S 4, U up becomes U (Step S 6). On the other hand, in step S 3, to
≧ t When Kano determination is NO, at step S 7,
It is determined whether (t-to) ≧ ta. If YES in step S 7, the rotational speed is decelerated, the rotation speed U down after the deceleration, the U · (t-to) / ta ( step S 8). If NO in step S 7, U
down becomes U (step S 9 ). By performing such correction, the amount of oxygen introduced into the growth surface of Si single crystal 12 is made uniform.
【００１５】次に図１に基いて第２の発明について説明
する。図１において図３に使用した符号と同一の符号
は、同一物若しくは該当物を示す。Next, the second invention will be described with reference to FIG. In FIG. 1, the same reference numerals as those used in FIG. 3 indicate the same or corresponding items.
【００１６】本願発明装置は、反応容器１の肩部に気圧
調整室１４を有し、Ｓｉ融液の酸素濃度ｔを検出するた
めのサンプル具１５が、上記気圧調整室１４を介して取
付けられる構成となっている。すなわち操業中の反応容
器１内の気圧は、大気圧よりも低く設定されており、こ
の条件を損わないようにするためサンプル具１５が気圧
調整室１４を介して取り付けられる構成としてある。そ
して同様の趣旨からサンプル具１４の上端も外気から遮
断された構造とされている。The apparatus of the present invention has a pressure adjusting chamber 14 at the shoulder of the reaction vessel 1, and a sample tool 15 for detecting the oxygen concentration t of the Si melt is mounted via the pressure adjusting chamber 14. It has a configuration. That is, the pressure inside the reaction vessel 1 during operation is set lower than the atmospheric pressure, and the sample device 15 is mounted via the pressure adjusting chamber 14 so as not to impair this condition. For the same purpose, the upper end of the sample device 14 is also configured to be shielded from the outside air.
【００１７】これを詳述すると、サンプル具１５を気圧
調整室１４に入れる前は、該室１４の蔽閉ドア１４ａが
閉っており、室１４の気圧は大気圧と等しい。そして室
１４にサンプル具１５を挿入した際、サンプル具と室１
４との係合部１４ｂの気密保持が図られている。この状
態下、室１４の気圧を減圧ポンプ（図示を省略）で低下
し、反応容器１内の気圧と等しく設ける。その後、ドア
１４ａを開け、サンプル具１５を下方へ移動させ、その
先端をＳｉ融液に挿入させるものである。More specifically, before the sample device 15 is placed in the pressure adjusting chamber 14, the closing door 14a of the chamber 14 is closed, and the pressure in the chamber 14 is equal to the atmospheric pressure. When the sample tool 15 is inserted into the chamber 14, the sample tool and the chamber 1
4, the airtightness of the engaging portion 14b is achieved. Under this condition, the pressure in the chamber 14 is reduced by a pressure-reducing pump (not shown), and is set equal to the pressure in the reaction vessel 1. Thereafter, the door 14a is opened, the sample tool 15 is moved downward, and the tip is inserted into the Si melt.
【００１８】１６は制御用コンピュータであって、上述
の回転数制御を自動的に行うべく配設されている。具体
的には、設定酸素濃度ｔｏを確定して該設定酸素濃度ｔ
ｏとサンプル具１５から得た検出酸素濃度ｔとを対比判
断し、ルツボ２の回転用モータ６の回転数Ｕを制御する
役割を担っている。従って、上記第１の発明の処理プロ
グラムを入力しておくことにより、回転数Ｕが自動制御
できる。A control computer 16 is provided for automatically performing the above-described rotation speed control. Specifically, the set oxygen concentration to is determined and the set oxygen concentration t is determined.
o and the detected oxygen concentration t obtained from the sample device 15 are compared to determine the rotation speed U of the rotation motor 6 of the crucible 2. Therefore, the rotation speed U can be automatically controlled by inputting the processing program of the first invention.
【００１９】[0019]
【発明の効果】以上説明したように本願第１の発明に依
ればＳｉ単結晶の育成面に導入される酸素量が一定化さ
れ、Ｓｉウエーハの歩留りが向上すると共に急激な熱バ
ランスの変化にも対応でき、本願第２の発明を用いるこ
とにより、第１の発明を自動的に実施できる。As described above, according to the first aspect of the present invention, the amount of oxygen introduced to the growth surface of the Si single crystal is made constant, the yield of Si wafer is improved, and the thermal balance changes rapidly. The first invention can be automatically implemented by using the second invention of the present application.
【図１】本願第１の発明のフローチャートFIG. 1 is a flowchart of the first invention of the present application.
【図２】本願第２の発明の概念図FIG. 2 is a conceptual diagram of the second invention of the present application.
【図３】従来装置の概念図FIG. 3 is a conceptual diagram of a conventional device.
【図４】学習曲線作成法の説明図FIG. 4 is an explanatory diagram of a learning curve creation method.
１ 反応容器 ２ ルツボ ４ Ｓｉ融液 ６ 回転用モータ １２ Ｓｉ単結晶 ｔ 検出酸素濃度 ｔｏ 設定酸素濃度 Reference Signs List 1 reaction vessel 2 crucible 4 Si melt 6 rotation motor 12 Si single crystal t detected oxygen concentration to set oxygen concentration
フロントページの続き (56)参考文献 特開 平５−32480（ＪＰ，Ａ) 特開 昭61−151088（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 Continuation of front page (56) References JP-A-5-32480 (JP, A) JP-A-61-151088 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C30B 1 / 00-35/00
Claims (2)
を行いつつシリコン融液から単結晶を育成する方法にお
いて、ルツボ内のシリコン融液中の酸素濃度を検出し、
該検出酸素濃度を設定酸素濃度と対比せしめて、前記検
出酸素濃度と設定酸素濃度との差が所定の許容範囲内に
ある場合と、当該許容範囲外の場合とで、ルツボ回転数
に差異を設けたことを特徴とする単結晶育成方法。1. A method for growing a single crystal from a silicon melt while controlling a predetermined crucible rotation speed, comprising detecting an oxygen concentration in the silicon melt in the crucible,
The detected oxygen concentration is compared with the set oxygen concentration, and the difference between the detected oxygen concentration and the set oxygen concentration is within a predetermined allowable range, and the difference between the detected oxygen concentration and the set oxygen concentration is out of the allowable range. A method for growing a single crystal, comprising:
び上下移動用モータによって回転且つ上下移動可能に設
けられている単結晶育成装置において、反応容器の上部
に設けられ、該反応容器に挿入される器具の存在によっ
て生じる反応容器内の気圧変化を防止する気密調整室
と、前記気密調整室を介して取付けられ、シリコン融液
中の酸素濃度を検出するサンプル具と、前記サンプル具
からの検出信号に基づいてルツボの回転制御を行う制御
装置と、を備えたことを特徴とする単結晶育成装置。2. A single crystal growing apparatus in which a crucible in a reaction vessel is rotatably and vertically movable by a rotation motor and a vertical movement motor, provided at an upper portion of the reaction vessel and inserted into the reaction vessel. An airtight adjustment chamber for preventing a change in air pressure in the reaction vessel caused by the presence of a tool to be performed; a sample tool attached via the airtight adjustment chamber to detect the oxygen concentration in the silicon melt; A control device for controlling the rotation of the crucible based on the detection signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3045288A JP3041990B2 (en) | 1991-03-12 | 1991-03-12 | Single crystal growing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3045288A JP3041990B2 (en) | 1991-03-12 | 1991-03-12 | Single crystal growing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06211594A JPH06211594A (en) | 1994-08-02 |
| JP3041990B2 true JP3041990B2 (en) | 2000-05-15 |
Family
ID=12715128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3045288A Expired - Lifetime JP3041990B2 (en) | 1991-03-12 | 1991-03-12 | Single crystal growing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3041990B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101721646B1 (en) * | 2015-01-29 | 2017-04-10 | 전자부품연구원 | Ski jump simulator |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08259380A (en) * | 1995-03-23 | 1996-10-08 | Nec Corp | Growing method for silicon crystal |
-
1991
- 1991-03-12 JP JP3045288A patent/JP3041990B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101721646B1 (en) * | 2015-01-29 | 2017-04-10 | 전자부품연구원 | Ski jump simulator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06211594A (en) | 1994-08-02 |
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