JP3040761B1 - Method of manufacturing sputtering target for forming optical disk protective film - Google Patents
Method of manufacturing sputtering target for forming optical disk protective filmInfo
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- JP3040761B1 JP3040761B1 JP10345603A JP34560398A JP3040761B1 JP 3040761 B1 JP3040761 B1 JP 3040761B1 JP 10345603 A JP10345603 A JP 10345603A JP 34560398 A JP34560398 A JP 34560398A JP 3040761 B1 JP3040761 B1 JP 3040761B1
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Abstract
【要約】
【課題】 スパッタリングによって膜を形成する際に発
生するパーティクルを減少させ、また光ディスクの誘電
体保護膜の作成に好適なターゲットを得る。
【解決手段】 ターゲットの結晶相に高温相であるα相
が０．１〜１０％含有するＺｎＳ−ＳｉＯ2 光ディスク
保護膜形成用スパタリングターゲットであり、１０００
°Ｃ以上でホットプレス等により焼結するか、又は低温
で焼結後１０００°Ｃ以上の高温で熱処理して結晶相中
に高温相であるα相を形成する。A target suitable for reducing particles generated when a film is formed by sputtering and suitable for forming a dielectric protective film of an optical disk is provided. A is a ZnS-SiO 2 Spata ring target optical disc protective film formed α-phase is a high temperature phase in the crystal phase of the target contains 0.1% to 10%, 1000
Sintering by hot pressing or the like at a temperature of not less than ° C or heat treatment at a high temperature of not less than 1000 ° C after sintering at a low temperature to form an α phase as a high temperature phase in the crystal phase.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、スパッタリングに
よって膜を形成する際に発生するパーティクルを減少さ
せ、光ディスク特に相変化型光ディスクに好適な誘電体
保護膜の形成に有用であるＺｎＳ−ＳｉＯ２光ディスク
保護膜形成用スパッタリングターゲットの製造方法に関
する。BACKGROUND OF THE INVENTION The present invention reduces the particles generated when forming a film by sputtering, ZnS-SiO 2 optical disc is useful in the formation of a suitable dielectric protective film on the optical disk, especially a phase change optical disk The present invention relates to a method for manufacturing a sputtering target for forming a protective film.
【０００２】[0002]
【従来の技術】近年、磁気ヘッドを必要とせずに記録・
再生ができる高密度記録光ディスク技術が開発され、急
速に関心が高まっている。この光ディスクは再生専用
型、追記型、書き換え型の３種類に分けられるが、特に
追記型又は書き換え型で使用されている相変化方式が注
目されている。この相変化型光ディスクを用いた記録・
再生の原理を以下に簡単に説明する。相変化光ディスク
は、基板上の記録薄膜をレーザー光の照射によって加熱
昇温させ、その記録薄膜の構造に結晶学的な相変化（ア
モルファス⇔結晶）を起こさせて情報の記録・再生を行
うものであり、より具体的にはその相間の光学定数の変
化に起因する反射率の変化を検出して情報の再生を行な
うものである。2. Description of the Related Art In recent years, recording / recording without the need for a magnetic head has been performed.
High-density recording optical disc technology capable of reproduction has been developed, and interest is rapidly increasing. This optical disk is classified into three types: a read-only type, a write-once type, and a rewritable type. In particular, a phase change method used in a write-once type or a rewritable type has attracted attention. Recording using this phase change optical disc
The principle of reproduction will be briefly described below. A phase-change optical disk records and reproduces information by heating the recording thin film on a substrate by irradiating a laser beam and raising the temperature, causing a crystallographic phase change (amorphous to crystalline) in the structure of the recording thin film. More specifically, information is reproduced by detecting a change in reflectance caused by a change in an optical constant between phases.
【０００３】上記の相変化は１〜数μｍ程度の径に絞っ
たレーザー光の照射によって行なわれる。この場合、例
えば１μｍのレーザービームが１０ｍ／ｓの線速度で通
過するとき、光ディスクのある点に光が照射される時間
は１００ｎｓであり、この時間内で上記相変化と反射率
の検出を行なう必要がある。また、上記結晶学的な相変
化すなわちアモルファスと結晶との相変化を実現する上
で、溶融と急冷が光ディスクの相変化記録層だけでなく
周辺の誘電体保護層やアルミニウム合金の反射膜にも繰
返し付与されることになる。The above-mentioned phase change is performed by irradiating a laser beam having a diameter of about 1 to several μm. In this case, for example, when a laser beam of 1 μm passes at a linear velocity of 10 m / s, the time during which light is irradiated to a certain point on the optical disk is 100 ns, and the phase change and the reflectance are detected within this time. There is a need. In order to realize the above-mentioned crystallographic phase change, that is, a phase change between amorphous and crystalline, melting and quenching are performed not only on the phase change recording layer of the optical disc but also on the surrounding dielectric protective layer and the reflective film of aluminum alloy. It will be given repeatedly.
【０００４】このようなことから相変化光ディスクは図
１に示すように、Ｇｅ−Ｓｂ−Ｔｅ系等の記録薄膜層４
の両側をＺｎＳ・ＳｉＯ2 系の高融点誘電体の保護層
３、５で挟み、さらにアルミニウム合金反射膜６を設け
た四層構造となっている。このなかで反射層６と保護層
３、５はアモルファス部と結晶部との吸収を増大させ反
射率の差を大きくすることができる光学的機能が要求さ
れるほか、記録薄膜４の耐湿性や熱による変形の防止機
能、さらには記録の際の熱的条件の制御という機能が要
求される（雑誌「光学」２６巻１号頁９〜１５参照）。
このように、高融点誘電体の保護層３、５は昇温と冷却
による熱の繰返しストレスに対して耐性をもち、さらに
これらの熱影響が反射膜や他の箇所に影響を及ぼさない
ようにし、かつそれ自体も薄く、低反射率でかつ変質し
ない強靭さが必要である。この意味において誘電体保護
層は重要な役割を有する。なお、図１において符号１は
レーザー入射方向、符号２はポリカーボネート等の基
板、符号７はオーバーコート、符号８は接着層をそれぞ
れ示す。For this reason, as shown in FIG. 1, a phase-change optical disk has a recording thin film layer 4 of Ge—Sb—Te system or the like.
Have a four-layer structure in which ZnS.SiO 2 -based high-melting point dielectric protective layers 3 and 5 are sandwiched on both sides, and an aluminum alloy reflective film 6 is further provided. Among these, the reflective layer 6 and the protective layers 3 and 5 are required to have an optical function capable of increasing the absorption between the amorphous part and the crystalline part and increasing the difference in reflectance. A function of preventing deformation due to heat and a function of controlling thermal conditions at the time of recording are required (see “Optics”, Vol. 26, No. 1, pages 9 to 15).
As described above, the protective layers 3 and 5 made of the high melting point dielectric have resistance to the repetitive heat stress caused by the temperature rise and the cooling, and furthermore, make sure that these thermal influences do not affect the reflection film and other parts. In addition, it is necessary that the material itself be thin, have low reflectivity, and be strong without deterioration. In this sense, the dielectric protective layer plays an important role. In FIG. 1, reference numeral 1 denotes a laser incident direction, reference numeral 2 denotes a substrate made of polycarbonate or the like, reference numeral 7 denotes an overcoat, and reference numeral 8 denotes an adhesive layer.
【０００５】上記誘電体保護層は、通常スパッタリング
法によって形成されている。このスパッタリング法は正
の電極と負の電極とからなるターゲットとを対向させ、
不活性ガス雰囲気下でこれらの基板とターゲットの間に
高電圧を印加して電場を発生させるものであり、この時
電離した電子と不活性ガスが衝突してプラズマが形成さ
れ、このプラズマ中の陽イオンがターゲット（負の電
極）表面に衝突してターゲット構成原子を叩きだし、こ
の飛び出した原子が対向する基板表面に付着して膜が形
成されるという原理を用いたものである。The above-mentioned dielectric protective layer is usually formed by a sputtering method. In this sputtering method, a target composed of a positive electrode and a negative electrode is opposed to each other,
A high voltage is applied between the substrate and the target in an inert gas atmosphere to generate an electric field. At this time, the ionized electrons collide with the inert gas to form plasma, and the plasma is formed. This is based on the principle that positive ions collide with the surface of a target (negative electrode) and strike out constituent atoms of the target, and the ejected atoms adhere to the opposing substrate surface to form a film.
【０００６】ＺｎＳ−ＳｉＯ2 ターゲットを用いてスパ
ッタリングし薄膜を形成していく段階で、ある一定量以
上を被覆するとパーティクルと言われるクラスター状の
粗大粒が薄膜上に付着してくるようになる。このパーテ
ィクルはスパッタチャンバ内の壁や種々の機器にスパッ
タリングによる飛沫粒子が付着堆積したもので、それが
一定量を超えると剥がれ出し、かつそれがスパッタチャ
ンバ内に浮遊し、さらに基板あるいは薄膜に再付着した
ものが主な原因である。このようなパーティクルは薄膜
の特性を著しく悪化させるので、これが基板または薄膜
上に多く析出してきた段階で、一旦スパッタリングを中
止し、スパッタチャンバを解放して、該チャンバ内の壁
や種々の機器からパーティクルの原因となる膜の堆積物
を清掃する必要があった。これは著しく生産性を低下さ
せるものである。この膜の堆積物はＺｎＳ−ＳｉＯ2 タ
ーゲットの製造工程、すなわちＳｉＯ2 粉末とＺｎＳ粉
末の混合粉の焼結の段階において因果関係があることが
予想されたが、従来それ以上の解決策を見いだすに至っ
ていなかった。[0006] In the step of forming a thin film by sputtering using a ZnS-SiO 2 target, if a certain amount or more is coated, cluster-like coarse particles called particles come to adhere to the thin film. These particles are spattered particles deposited by sputtering on the walls and various devices in the sputtering chamber, and when they exceed a certain amount, they come off and float in the sputtering chamber and re-apply to the substrate or thin film. The main cause is adhered matter. Since such particles significantly deteriorate the properties of the thin film, when a large amount of the particles are deposited on the substrate or the thin film, the sputtering is stopped once, the sputtering chamber is released, and the sputter chamber is released from walls and various devices. It was necessary to clean film deposits that caused particles. This significantly reduces productivity. The deposit of this film was expected to have a causal relationship in the manufacturing process of the ZnS-SiO 2 target, that is, in the stage of sintering the mixed powder of the SiO 2 powder and the ZnS powder, but a further solution has heretofore been found. Was not reached.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、ＺｎＳ−Ｓ
ｉＯ2 スパッタリングターゲット製造工程を基本的に見
直し、ＺｎＳ−ＳｉＯ2 ターゲットの材料であるＳｉＯ
2 粉末とＺｎＳ粉末との混合粉の焼結または製造工程の
改善を図り、これによって形成したターゲットを用いて
スパッタリングすることによりパーティクルの発生を著
しく減少させ、スパッタリングの中断または中止の回数
を減らして生産効率を上げ、誘電体保護層を得ることが
できるＺｎＳ−ＳｉＯ2 光ディスク保護膜形成用スパッ
タリングターゲット及びその製造方法を得ることを目的
とする。SUMMARY OF THE INVENTION The present invention provides a ZnS-S
The manufacturing process of the SiO 2 sputtering target was basically reviewed, and the SiO 2
(2) Improve the sintering or manufacturing process of the mixed powder of the powder and ZnS powder, and remarkably reduce the generation of particles by sputtering using the target formed thereby, and reduce the number of times of interrupting or stopping the sputtering. raising the production efficiency, and to obtain a ZnS-SiO 2 disc protective film forming sputtering target and its manufacturing method to obtain the dielectric protective layer.
【０００８】上記の課題を解決するために、本発明者ら
は鋭意研究を行った結果、従来の焼結方法に替えて、Ｈ
ＩＰ又はホットプレスによる焼結後に、高温で熱処理す
ることにより、ＺｎＳ−ＳｉＯ２スパッタリング用ター
ゲットを製造し、これにより、パーティクルの発生を著
しく減少させるとともに皮膜の均一性を向上させ、誘電
体保護層を安定した製造条件で、再現性よく得ることが
できるとの知見を得た。本発明はこの知見に基づき、 １ ＳｉＯ２粉末とＺｎＳ粉末とを混合した後、ＨＩＰ
又はホットプレスにより焼結し、さらにこの焼結体を１
０００°Ｃ以上の温度で熱処理したことを特徴とするＺ
ｎＳ−ＳｉＯ２光ディスク保護膜形成用スパッタリング
ターゲットの製造方法 ２ ターゲットの結晶相に高温相であるα相が０．１〜
１０％含まれることを特徴とする上記１記載のＺｎＳ−
ＳｉＯ２光ディスク保護膜形成用スパッタリングターゲ
ットの製造方法、を提供する。In order to solve the above-mentioned problems, the present inventors have conducted intensive studies, and as a result, H
After sintering according to IP or hot pressing, by heat treatment at a high temperature to produce a ZnS-SiO 2 sputtering target, thereby, together with significantly reducing the generation of particles to improve the uniformity of the film, the dielectric protective layer Was found to be able to be obtained with good reproducibility under stable production conditions. The present invention is based on this finding, and after mixing 1 SiO 2 powder and ZnS powder, HIP
Or, it is sintered by hot pressing, and
Z heat-treated at a temperature of 000 ° C. or more
Manufacturing method of sputtering target for forming nS-SiO 2 optical disk protective film 2 α-phase which is a high-temperature phase in the crystal phase of target is 0.1 to 0.1
10% by weight of ZnS—
A method for manufacturing a sputtering target for forming an SiO 2 optical disk protective film is provided.
【０００９】[0009]
【発明の実施の形態】本発明のＺｎＳ−ＳｉＯ２スパッ
タリングターゲットの原料となるＺｎＳとＳｉＯ２は熱
力学的に考えて、１０００°Ｃ以下では反応せず、また
ＺｎＳ自体が１１００°Ｃ以上の温度で昇華するので、
焼結によって製造されたＺｎＳ−ＳｉＯ２ターゲットは
混合物の緻密体ということができる。従来、上記のよう
に２０〜３０μｍのＳｉＯ２粉末が使用され、これを焼
結してＺｎＳ−ＳｉＯ２ターゲットとしていた。この段
階では焼結の条件が、パーティクルの発生原因となると
の予想は全くできなかった。しかし、ＳｉＯ２粉末（好
ましくは平均粒径が１０μｍ以下である）とＺｎＳ粉末
とを混合し焼結した後、さらにこの焼結体を１０００°
Ｃ以上の温度（特に１１００°Ｃ近傍の温度）で熱処理
することにより、予想外にパーティクルの発生を著しく
減少させることができた。BEST MODE FOR CARRYING OUT THE INVENTION ZnS and SiO 2, which are raw materials of a ZnS—SiO 2 sputtering target of the present invention, do not react at 1000 ° C. or lower, and ZnS itself does not react at 1100 ° C. or higher. Because it sublimates at temperature,
The ZnS—SiO 2 target manufactured by sintering can be said to be a dense body of a mixture. Conventionally, as described above, 20 to 30 μm SiO 2 powder has been used, and this has been sintered to obtain a ZnS—SiO 2 target. At this stage, it was not at all expected that the sintering conditions would cause the generation of particles. However, after mixing and sintering SiO 2 powder (preferably having an average particle size of 10 μm or less) and ZnS powder, the sintered body is further cooled by 1000 °.
By performing the heat treatment at a temperature equal to or higher than C (in particular, a temperature in the vicinity of 1100 ° C.), the generation of particles could be unexpectedly significantly reduced.
【００１０】このようにして得たＺｎＳ−ＳｉＯ2 スパ
ッタリング用ターゲットは、該ターゲットの結晶相に高
温相であるα相が０．１〜１０％含まれることが確認さ
れた。この結晶相に高温相であるα相が０．１〜１０％
含まれるターゲットを製造することにより、パーティク
ルの発生を効果的に抑制することができる。このような
焼結条件または製造条件が、パーティクルの発生抑制す
る理由は必ずしも明確ではないが、スパッタリング中の
高温のプラズマに対し高温相で安定であるα相が物性的
に耐性が高くなる結果と考えられる。以上のようにし
て、パーティクルの発生を極力減少せしめることによ
り、スパッタリングの中断または中止の回数が減り、煩
雑なスパッタチャンバ内の清掃の頻度が減少するので、
生産効率を従来に比べて飛躍的に上げることができると
いう効果を有する。また、本発明のＺｎＳ−ＳｉＯ2 タ
ーゲットにより形成された膜はアモルファス部と結晶部
との吸収を増大させかつ反射率変化の差を大きくする光
学的機能、記録薄膜の耐湿性や熱による変形の防止機
能、さらには記録の際の熱的条件の制御という機能に対
し、満足できる良好かつ安定した膜が再現性良く得るこ
とができることが分かった。In the ZnS-SiO 2 sputtering target thus obtained, it was confirmed that the crystal phase of the target contained 0.1 to 10% of the α phase which was a high-temperature phase. The α phase, which is a high-temperature phase, is 0.1 to 10% in this crystal phase.
By producing the included target, generation of particles can be effectively suppressed. Although the reason why such sintering conditions or manufacturing conditions suppress the generation of particles is not always clear, the result is that the α phase, which is stable in the high-temperature phase with respect to the high-temperature plasma during sputtering, has high physical resistance. Conceivable. As described above, by reducing the generation of particles as much as possible, the number of times of interrupting or stopping sputtering is reduced, and the frequency of complicated sputtering chamber cleaning is reduced.
This has the effect that the production efficiency can be dramatically increased as compared with the conventional case. Further, the film formed by the ZnS—SiO 2 target of the present invention has an optical function of increasing the absorption between the amorphous part and the crystalline part and increasing the difference in the change in reflectance, the moisture resistance of the recording thin film and the deformation of the recording thin film due to heat. It has been found that a satisfactory and stable film with satisfactory reproducibility can be obtained with respect to the prevention function and the function of controlling thermal conditions during recording.
【００１１】[0011]
【実施例および比較例】以下、実施例および比較例に基
づいて説明する。なお、本実施例はあくまで一例であ
り、この例によって何ら制限されるものではない。すな
わち、本発明は特許請求の範囲によってのみ制限される
ものであり、本発明に含まれる実施例以外の種々の変形
を包含するものである。 （実施例１）平均粒径２０μｍのＳｉＯ2 と平均粒径５
μｍのＺｎＳ粉末とを２０：８０（モル比）に秤量し
て、雰囲気Ａｒの条件下で、温度１０００°Ｃ、圧力１
５０Ｋｇｆ／ｃｍ2 でホットプレスを行なった。得られ
たターゲットの密度は３．４ｇ／ｃｍ3 であった。この
ようにして得たＺｎＳ−ＳｉＯ2 ターゲット焼結体をさ
らに、不活性ガス（Ａｒ）雰囲気で１０５０°Ｃ、４時
間の熱処理を行なってターゲットとした。このようにし
て得たターゲットの結晶相に高温相であるα相が５％含
まれていた。この場合のＸ線回折による結晶構造の調査
結果を図２に示す。比較のために、上記熱処理をしてい
ない場合のターゲットの結晶構造の調査結果を図３に示
す。Examples and comparative examples are described below based on examples and comparative examples. This embodiment is merely an example, and the present invention is not limited to this example. That is, the present invention is limited only by the claims, and includes various modifications other than the examples included in the present invention. (Example 1) SiO 2 having an average particle size of 20 μm and an average particle size of 5
μm ZnS powder was weighed at a ratio of 20:80 (molar ratio), and the temperature was 1000 ° C. and the pressure was 1 under the condition of atmosphere Ar.
Hot pressing was performed at 50 kgf / cm 2 . The density of the obtained target was 3.4 g / cm 3 . The ZnS—SiO 2 target sintered body thus obtained was further subjected to a heat treatment at 1050 ° C. for 4 hours in an inert gas (Ar) atmosphere to obtain a target. The thus obtained target crystal phase contained 5% of the α phase which was a high temperature phase. FIG. 2 shows the result of the investigation of the crystal structure by X-ray diffraction in this case. For comparison, FIG. 3 shows the result of investigation of the crystal structure of the target when the above heat treatment was not performed.
【００１２】図２ではβ相のピークの両側にα相のピー
クがあり、高温相であるα相が存在しているのが確認で
きる。他方、図３ではα相の存在が全く認められない。
このターゲットを使用してスパッタリングを実施し、パ
ーティクルの発生情況を調べた。パーティクルの発生が
多くなり、汚染による不良品発生防止のためにスパッタ
チャンバ内の内壁や機器のクリーニングが必要となるに
至るまでの基板への成膜（製造）枚数をカウントしたと
ころ、本実施例で得られたターゲットを用いた場合には
３５００枚となるに至った。この枚数は後述する比較例
１の２５００枚と比較して、４０％の増加となった。タ
ーゲットの製造条件とスパッタチャンバ内のクリーニン
グ至るまでの生産枚数の比較一覧表を比較例と共に表１
に示す。本発明の著しい効果は表１から明らかである。In FIG. 2, there are peaks of the α phase on both sides of the peak of the β phase, and it can be confirmed that the α phase which is a high temperature phase is present. On the other hand, in FIG. 3, the existence of the α phase is not recognized at all.
Sputtering was performed using this target, and the state of generation of particles was examined. In this example, the number of films formed (manufactured) on the substrate was counted until the generation of particles increased and cleaning of the inner walls and equipment in the sputtering chamber was required to prevent the generation of defective products due to contamination. In the case where the target obtained in the above was used, the number reached 3,500. This number increased by 40% as compared with 2500 sheets of Comparative Example 1 described later. Table 1 shows a comparison table of target manufacturing conditions and the number of sheets produced up to cleaning in the sputtering chamber together with comparative examples.
Shown in The remarkable effects of the present invention are apparent from Table 1.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【００１５】（比較例１）次に、実施例１と同等の平均
粒径２０μｍのＳｉＯ2 と平均粒径５μｍのＺｎＳ粉末
とを等量の秤量して、雰囲気Ａｒの条件下で、温度１０
００°Ｃ、圧力１５０Ｋｇｆ／ｃｍ2 でホットプレスを
行なった。得られたターゲットの密度は３．４ｇ／ｃｍ
3 であった。このようにして得たＺｎＳ−ＳｉＯ2 ター
ゲットを使用してスパッタリングし、パーティクルが発
生してスパッタチャンバの内壁や機器をクリーニングし
なければならない時に至るまでの基板への被覆すなわち
生産枚数を調べたところ、２５００枚であった。これは
実施例の３５００枚に比べると著しい生産率の減少とな
った。(Comparative Example 1) Next, equal amounts of SiO 2 having an average particle diameter of 20 μm and ZnS powder having an average particle diameter of 5 μm, which are equivalent to those in Example 1, were weighed at a temperature of 10 ° C. under an atmosphere of Ar.
Hot pressing was performed at 00 ° C. and a pressure of 150 kgf / cm 2 . The density of the obtained target is 3.4 g / cm.
Was 3 . Sputtering was performed using the ZnS-SiO 2 target obtained in this way, and the number of particles generated and the coating on the substrate until the inner wall of the sputtering chamber and equipment had to be cleaned, that is, the number of sheets produced, was examined. 2,500 sheets. This resulted in a remarkable decrease in the production rate as compared with 3500 sheets of the example.
【００１６】[0016]
【発明の効果】ＳｉＯ２粉末とＺｎＳ粉末との混合粉を
通常（１０００°Ｃ以下の温度で）焼結後に、さらに１
０００°Ｃ以上の温度で熱処理することにより得たＺｎ
Ｓ−ＳｉＯ２光ディスク保護膜形成用スパッタリングタ
ーゲットは、これを用いてスパッタリングした場合、パ
ーティクルの発生を著しく減少させるとともに皮膜の均
一性を向上させ、また誘電体保護層を安定した製造条件
で、再現性よく得ることができるという優れた特徴を有
している。The mixed powder of the SiO 2 powder and the ZnS powder is usually sintered (at a temperature of 1000 ° C. or lower) and then further sintered.
Zn obtained by heat treatment at a temperature of 000 ° C. or more
The sputtering target for forming an S-SiO 2 optical disk protective film, when sputtered using this, significantly reduces the generation of particles, improves the uniformity of the film, and reproduces the dielectric protective layer under stable manufacturing conditions. It has an excellent feature that it can be obtained easily.
【図１】記録薄膜層構造の断面説明図である。FIG. 1 is an explanatory sectional view of a recording thin film layer structure.
【図２】ＺｎＳ−ＳｉＯ2 ターゲット焼結体をさらに高
温で熱処理した場合のＸ線回折による結晶構造の調査結
果であり、α相が存在する場合を示している。FIG. 2 is a result of investigating a crystal structure by X-ray diffraction when a ZnS—SiO 2 target sintered body is further heat-treated at a high temperature, and shows a case where an α phase is present.
【図３】通常の焼結を行なったＺｎＳ−ＳｉＯ2 ターゲ
ットのＸ線回折による結晶構造の調査結果であり、α相
がない場合を示している。FIG. 3 is a result of investigation of a crystal structure by X-ray diffraction of a ZnS—SiO 2 target subjected to normal sintering, and shows a case where there is no α phase.
１ レーザー入射方向 ２ ポリカーボネート等の基板 ３ ＺｎＳ・ＳｉＯ2 等の誘電体保護層 ４ Ｓｅ・Ｓｂ・Ｔｅ等の相変化記録層 ５ ＺｎＳ・ＳｉＯ2 等の誘電体保護層 ６ Ａｌ合金反射層 ７ オーバーコート ８ 接着層Substrate 3 ZnS · SiO 2 or the like of the dielectric protective layer 4 Se · Sb phase change such as recording layer 5 ZnS · SiO 2 of · Te such dielectric protective layer 6 Al alloy reflective layer 7 over such 1 laser incident direction 2 Polycarbonate Coat 8 Adhesive layer
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平10−81960（ＪＰ，Ａ) 特開 平10−46328（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 B22F 3/15 C04B 35/14 C04B 35/547 G11B 7/26 531 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-10-81960 (JP, A) JP-A-10-46328 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 14/00-14/58 B22F 3/15 C04B 35/14 C04B 35/547 G11B 7/26 531
Claims (2)
後、ＨＩＰ又はホットプレスにより焼結し、さらにこの
焼結体を１０００°Ｃ以上の温度で熱処理したことを特
徴とするＺｎＳ−ＳｉＯ２光ディスク保護膜形成用スパ
ッタリングターゲットの製造方法。1. A were mixed and SiO 2 powder and ZnS powder, HIP or sintered by hot pressing, ZnS-SiO 2, characterized in that further the sintered body was heat-treated at 1000 ° C or higher temperature A method for manufacturing a sputtering target for forming an optical disk protective film.
が０．１〜１０％含まれることを特徴とする請求項１記
載のＺｎＳ−ＳｉＯ２光ディスク保護膜形成用スパッタ
リングターゲットの製造方法。2. The method for producing a sputtering target for forming a ZnS—SiO 2 optical disk protective film according to claim 1, wherein the crystalline phase of the target contains an α phase that is a high temperature phase in an amount of 0.1 to 10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10345603A JP3040761B1 (en) | 1998-12-04 | 1998-12-04 | Method of manufacturing sputtering target for forming optical disk protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10345603A JP3040761B1 (en) | 1998-12-04 | 1998-12-04 | Method of manufacturing sputtering target for forming optical disk protective film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP3040761B1 true JP3040761B1 (en) | 2000-05-15 |
| JP2000169958A JP2000169958A (en) | 2000-06-20 |
Family
ID=18377717
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10345603A Expired - Lifetime JP3040761B1 (en) | 1998-12-04 | 1998-12-04 | Method of manufacturing sputtering target for forming optical disk protective film |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002105630A (en) * | 2000-09-27 | 2002-04-10 | Mitsui Mining & Smelting Co Ltd | Target of zinc sulfide-silicon dioxide sintered compact, and its manufacturing method |
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1998
- 1998-12-04 JP JP10345603A patent/JP3040761B1/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP2000169958A (en) | 2000-06-20 |
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