JP2961480B2 - Fork for transferring semiconductor wafers - Google Patents
Fork for transferring semiconductor wafersInfo
- Publication number
- JP2961480B2 JP2961480B2 JP19552493A JP19552493A JP2961480B2 JP 2961480 B2 JP2961480 B2 JP 2961480B2 JP 19552493 A JP19552493 A JP 19552493A JP 19552493 A JP19552493 A JP 19552493A JP 2961480 B2 JP2961480 B2 JP 2961480B2
- Authority
- JP
- Japan
- Prior art keywords
- fork
- semiconductor wafer
- tib
- powder
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Powder Metallurgy (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造プロセスに
おいてシリコンや石英等の半導体ウエハの移載に用いら
れるフォークに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fork used for transferring a semiconductor wafer such as silicon or quartz in a semiconductor manufacturing process.
【０００２】[0002]
【従来の技術】半導体ウエハ移載用フォークは、半導体
製造装置における搬送ロボットの軸に取り付けて使用さ
れ、例えばウエハカセット又はウエハボートに収容され
ている半導体ウエハをその上に載せて取り出し、次工程
のウエハカセット等に収容したり、あるいは検査テーブ
ルに載せたりする。従来、この種のフォークは、固相焼
結されたＡｌ2 Ｏ3 等の絶縁性セラミックスからなり、
例えば帯板の一端部上に半導体ウエハの一部と係合可能
な凹部を設けて構成されている。2. Description of the Related Art A semiconductor wafer transfer fork is used by being attached to a shaft of a transfer robot in a semiconductor manufacturing apparatus. For example, a semiconductor wafer accommodated in a wafer cassette or a wafer boat is placed thereon and taken out, and the next step is performed. In a wafer cassette or the like, or placed on an inspection table. Conventionally, this type of fork is made of insulating ceramics such as Al 2 O 3 which is solid-phase sintered,
For example, a concave portion is provided on one end of the band plate so as to be able to engage with a part of the semiconductor wafer.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
半導体ウエハ移載用フォークは、固相焼結されたＡｌ2
Ｏ3 等の絶縁性セラミックスからなるので、パーティク
ルを生じ易いと共に、半導体ウエハの静電気発生、帯電
を引き起こし、特性変化や浮遊塵埃あるいは上記パーテ
ィクルの付着によるウエハ不良となる場合がある。そこ
で、本発明は、パーティクルの発生及び帯電を防止する
ことにより、ウエハ不良の発生解消をなし得る半導体ウ
エハ移載用フォークの提供を目的とする。[0007] However, the conventional semiconductor wafer transfer fork is, Al 2 which is a solid phase sintered
Since it is made of insulating ceramics such as O 3 , particles are likely to be generated, and static electricity and electrification of the semiconductor wafer are caused, which may cause a change in characteristics, floating dust, or a wafer defect due to adhesion of the particles. SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor wafer transfer fork capable of preventing the occurrence of wafer defects by preventing the generation and electrification of particles.
【０００４】[0004]
【課題を解決するための手段】前記課題を解決するた
め、本発明の半導体ウエハ移載用フォークは、液相焼結
されたＴｉＢ2 からなることを特徴とする。上記フォー
クの少なくとも半導体ウエハとの接触部は、ＣＶＤ−Ｔ
ｉＢ2 膜によって覆われていることが好ましい。又、少
なくとも半導体ウエハとの接触部は、アースされている
ことが好ましい。ここで、液相焼結されたＴｉＢ2 と
は、ＴｉＢ2 の粉末に０．１〜８９重量％の金属炭化物
粉末（特にＮｉ又はＣｒの炭化物が好ましい）又は１〜
１０重量％の金属粉末（特にＮｉ又はＣｒが好ましい）
及び１〜１０重量％のカーボン粉末を添加、混合し、成
形して、無加圧又は加圧下の非酸化性雰囲気において金
属炭化物粉末又は金属粉末の融点近くの温度で焼成して
製造されるものをいう。なお、ＴｉＢ2 粉末の含有量を
８０重量％以上とすれば、緻密度を増し、より一層パー
ティクルの低減をはかることができる。In order to solve the above-mentioned problems, a semiconductor wafer transfer fork according to the present invention is made of liquid phase sintered TiB 2 . At least a contact portion of the fork with the semiconductor wafer is formed by CVD-T
Preferably, it is covered with the iB 2 film. Further, it is preferable that at least a contact portion with the semiconductor wafer is grounded. Here, the liquid phase sintered TiB 2 is defined as 0.1 to 89% by weight of a metal carbide powder (particularly preferably a carbide of Ni or Cr) or 1 to 89% by weight of the TiB 2 powder.
10% by weight of metal powder (Ni or Cr is particularly preferred)
Manufactured by adding, mixing and shaping 1 to 10% by weight of carbon powder and firing at a temperature close to the melting point of the metal carbide powder or metal powder in a non-oxidizing atmosphere under no pressure or under pressure. Say. If the content of the TiB 2 powder is 80% by weight or more, the density can be increased and the number of particles can be further reduced.
【０００５】[0005]
【作用】上記手段においては、フォークが耐摩耗性に優
れ、かつ導電性で高弾性率のＴｉＢ2 によって形成され
ると共に、ＴｉＢ2 粒子がＣｒＢとＴｉＣの粒界相に取
り囲まれる。フォークの少なくとも半導体ウエハとの接
触部がＣＶＤ−ＴｉＢ2 膜によって覆われていることに
より、接触部の純度が高くなると共に、緻密で面粗さが
密となり、かつ膜とフォーク本体の接合強度が大とな
る。又、少なくとも半導体ウエハとの接触部がアースさ
れていることにより、半導体ウエハの帯電を完全に防止
することができる。In the above means, the fork is formed of TiB 2 having excellent wear resistance and conductivity and high elasticity, and the TiB 2 particles are surrounded by the grain boundary phase of CrB and TiC. By contacting portion of at least the semiconductor wafer fork is covered by a CVD-TiB 2 layer, with the purity of the contact portion is increased, dense and surface roughness becomes dense, and the bonding strength of the film and the fork bodies It will be great. Further, since at least the contact portion with the semiconductor wafer is grounded, the charging of the semiconductor wafer can be completely prevented.
【０００６】[0006]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。図１、図２は本発明の半導体ウエハ移載用
フォークの一実施例を示す平面図、側面図である。この
フォーク１は、液相焼結されたＴｉＢ2 からなる帯板状
のフォーク本体１ａ（７０×３００×２ｍｍ）の一端部
上に半導体ウエハＷの一部と係合可能な凹部１ｂを設
け、かつ他端部上に搬送ロボットの軸２に取り付けるた
めの取付け段部１ｂを設けると共に、その全表面を厚さ
１０μｍ、表面粗さＲａ０．８μｍのＣＶＤ−ＴｉＢ2
膜（図示せず）によって覆われて構成され、かつ上記軸
２を介してアースされている。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are a plan view and a side view showing an embodiment of a semiconductor wafer transfer fork according to the present invention. In this fork 1, a concave portion 1b capable of engaging with a part of the semiconductor wafer W is provided on one end of a band-shaped fork main body 1a (70 × 300 × 2 mm) made of liquid phase sintered TiB 2 . and provided with a mounting portion 1b for attachment to the shaft 2 of the transfer robot onto the other end portion, the thickness of 10μm the entire surface, surface roughness Ra0.8μm of CVD-TiB 2
It is covered by a membrane (not shown) and is grounded via the shaft 2.
【０００７】上記半導体ウエハ移載用フォークは、９５
重量％のＴｉＢ2 粉末に５重量％のＣｒ3 Ｃ2 粉末を添
加してセラミックス原料とし、このセラミックス原料に
少量のバインダーを加えて混合し、所定形状に成形した
後、成形用バインダーを加熱除去し、真空中あるいは不
活性ガス中等の非酸化性雰囲気において１９００℃の温
度で１〜５時間無加圧焼成し、しかる後に全表面を厚さ
１０μｍ、表面粗さＲａ０．８μｍのＣＶＤ−ＴｉＢ2
膜により覆って製造した。ＴｉＢ2 膜を形成するＣＶＤ
条件は、次の通りである。 原料ガス：ＴｉＣｌ4 ，ＢＣｌ3 温度：１４００℃ 雰囲気圧：７６０ｍｍＨｇ 得られたフォークの特性は、Ａｌ2 Ｏ3 からなる従来の
フォークのそれを併記する表１に示すようになった。The semiconductor wafer transfer fork is 95
5% by weight of Cr 3 C 2 powder is added to a 1% by weight of TiB 2 powder to prepare a ceramic raw material, and a small amount of a binder is added to the ceramic raw material, mixed and formed into a predetermined shape, and the forming binder is removed by heating. Then, in a non-oxidizing atmosphere such as a vacuum or an inert gas or the like, pressureless calcination is performed at a temperature of 1900 ° C. for 1 to 5 hours, and thereafter, the entire surface is 10 μm thick and the surface roughness Ra is 0.8 μm CVD-TiB 2.
Manufactured covered with a membrane. CVD for forming TiB 2 film
The conditions are as follows. Source gas: TiCl 4 , BCl 3 Temperature: 1400 ° C. Atmospheric pressure: 760 mmHg The characteristics of the obtained fork are as shown in Table 1 together with those of a conventional fork made of Al 2 O 3 .
【０００８】[0008]
【表１】 [Table 1]
【０００９】又、得られたフォークを用いてウエハボー
トに収容したシリコンウエハをその凹部に載せて取り出
し、次工程のウエハカセットに収容するまでの作業中
に、シリコンウエハの表面に付着したパーティクル数を
測定したところ、従来のフォークを用いたその結果を併
記する表２に示すようになった。Further, using the obtained fork, the silicon wafer accommodated in the wafer boat is placed on the concave portion and taken out, and the number of particles adhering to the surface of the silicon wafer during the operation until it is accommodated in the wafer cassette in the next step. Table 2 shows the results of the measurement using a conventional fork.
【００１０】[0010]
【表２】 [Table 2]
【００１１】従って、本発明に係るフォークは、導電性
を有すると共に、従来のものに比して極めて高い硬度と
優れた耐摩耗性を有し、パーティクルの付着するおそれ
が少ないことがわかる。Therefore, it can be seen that the fork according to the present invention has conductivity, has extremely high hardness and excellent wear resistance as compared with the conventional one, and has a low possibility of particle adhesion.
【００１２】なお、上記実施例においては、フォークを
帯板状とし、その一端部上に半導体ウエハを係合可能と
する凹部を設けた場合について述べたが、フォークの形
状はこれに限定されるものではなく、例えば三角形や円
形の板状としたり、あるいは半導体ウエハの周縁部を支
持する複数の支持体を設けるようにしてもよい。又、Ｔ
ｉＢ2 粉末に焼結助剤として添加されるものは、Ｃｒ2
Ｃ3 粉末に限らず、ＮｉＣ粉末その他の金属炭化物粉末
としてもよく、あるいはＣｒ，Ｎｉその他の金属粉末及
びカーボン粉末としてもよい。In the above-described embodiment, the case where the fork is formed in a strip shape and a concave portion on which the semiconductor wafer can be engaged is provided on one end thereof is described. However, the shape of the fork is not limited to this. Instead, for example, a triangular or circular plate may be used, or a plurality of supports for supporting the peripheral edge of the semiconductor wafer may be provided. Also, T
What is added to the iB 2 powder as a sintering aid is Cr 2
Not limited to C 3 powder, it may be a NiC powder other metal carbide powders, or Cr, Ni may be other metal powder and carbon powder.
【００１３】[0013]
【発明の効果】以上説明したように、本発明の半導体ウ
エハ移載用フォークによれば、フォークが耐摩耗性に優
れ、かつ導電性で高弾性率のＴｉＢ2 によって形成され
ていると共に、ＴｉＢ2 粒子がＣｒＢとＴｉＣの粒界相
に取り囲まれているので、従来のように静電気の発生や
帯電することがなく、半導体ウエハの特性変化や浮遊塵
埃の付着によるウエハ不良が発生することがない。又、
ＴｉＢ2 成分の摩粉の発生もなく、長時間安定して使用
することができる。一方、フォークの少なくとも半導体
ウエハとの接触部がＣＶＤ−ＴｉＢ2 膜によって覆われ
ていることにより、接触部の純度が高くなると共に、緻
密で面粗さが密となり、かつ膜とフォーク本体の接合強
度が大となるので、半導体ウエハの汚染、損傷を防止で
きると共に、耐用性を向上させることができる。又、少
なくとも半導体ウエハとの接触部がアースされているこ
とにより、半導体ウエハの帯電を完全に防止することが
できる。As described above, according to the fork for transferring a semiconductor wafer of the present invention, the fork is formed of TiB 2 having excellent abrasion resistance and conductivity and high elasticity. Since the two particles are surrounded by the grain boundary phase of CrB and TiC, static electricity is not generated or charged as in the prior art, and there is no occurrence of a wafer defect due to a change in the characteristics of the semiconductor wafer or adhesion of floating dust. . or,
There is no generation of powder of TiB 2 component, and it can be used stably for a long time. On the other hand, since at least the contact portion of the fork with the semiconductor wafer is covered with the CVD-TiB 2 film, the purity of the contact portion is increased, and the surface is dense and the surface roughness is high. Since the strength is increased, contamination and damage of the semiconductor wafer can be prevented, and the durability can be improved. Further, since at least the contact portion with the semiconductor wafer is grounded, the charging of the semiconductor wafer can be completely prevented.
【図１】本発明の半導体ウエハ移載用フォークの一実施
例を示す平面図である。FIG. 1 is a plan view showing one embodiment of a semiconductor wafer transfer fork of the present invention.
【図２】図１に示すフォークの側面図である。FIG. 2 is a side view of the fork shown in FIG.
１ 半導体ウエハ移載用フォーク １ａ フォーク本体 １ｂ 凹部 １ｃ 取付け部 Ｗ 半導体ウエハ DESCRIPTION OF SYMBOLS 1 Fork for semiconductor wafer transfer 1a Fork main body 1b Depression 1c Mounting part W Semiconductor wafer
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−133644（ＪＰ，Ａ) 特開 平５−21584（ＪＰ，Ａ) 特開 平５−13550（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/68 B22F 3/10 B65G 49/07 ────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-63-133644 (JP, A) JP-A-5-21584 (JP, A) JP-A-5-13550 (JP, A) (58) Field (Int.Cl. 6 , DB name) H01L 21/68 B22F 3/10 B65G 49/07
Claims (3)
特徴とする半導体ウエハ移載用フォーク。1. A fork for transferring a semiconductor wafer, comprising a liquid phase sintered TiB 2 .
ＶＤ−ＴｉＢ2 膜によって覆われていることを特徴とす
る請求項１記載の半導体ウエハ移載用フォーク。2. A method according to claim 1, wherein at least a contact portion with the semiconductor wafer is C
2. The fork for transferring a semiconductor wafer according to claim 1, wherein the fork is covered with a VD-TiB2 film.
ースされていることを特徴とする請求項１又は２記載の
半導体ウエハ移載用フォーク。3. The fork for transferring a semiconductor wafer according to claim 1, wherein at least a contact portion with the semiconductor wafer is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19552493A JP2961480B2 (en) | 1993-07-13 | 1993-07-13 | Fork for transferring semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19552493A JP2961480B2 (en) | 1993-07-13 | 1993-07-13 | Fork for transferring semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0729961A JPH0729961A (en) | 1995-01-31 |
| JP2961480B2 true JP2961480B2 (en) | 1999-10-12 |
Family
ID=16342531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19552493A Expired - Fee Related JP2961480B2 (en) | 1993-07-13 | 1993-07-13 | Fork for transferring semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2961480B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07147311A (en) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | Transfer arm |
| TW543079B (en) * | 1999-06-03 | 2003-07-21 | Applied Materials Inc | Robot blade for semiconductor processing equipment |
| KR100482009B1 (en) | 2002-10-22 | 2005-04-14 | 삼성전자주식회사 | Semiconductor Wafer Transfer Apparatus |
| JP4516089B2 (en) * | 2007-03-30 | 2010-08-04 | アプライド マテリアルズ インコーポレイテッド | Wafer transfer blade |
| JP2012160491A (en) * | 2011-01-28 | 2012-08-23 | Sharp Corp | Substrate transfer apparatus and substrate processing apparatus |
-
1993
- 1993-07-13 JP JP19552493A patent/JP2961480B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0729961A (en) | 1995-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |