JP2953111B2 - Electrode forming method and mounting method for semiconductor device - Google Patents
Electrode forming method and mounting method for semiconductor deviceInfo
- Publication number
- JP2953111B2 JP2953111B2 JP3145868A JP14586891A JP2953111B2 JP 2953111 B2 JP2953111 B2 JP 2953111B2 JP 3145868 A JP3145868 A JP 3145868A JP 14586891 A JP14586891 A JP 14586891A JP 2953111 B2 JP2953111 B2 JP 2953111B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- point alloy
- melting point
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
- H01L2224/11849—Reflowing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置を回路基板
に実装する際の半導体装置の電極形成方法とその実装方
法に関するものであり、特にフェースダウンで実装して
なる半導体装置の電極形成方法とその実装方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electrode of a semiconductor device when the semiconductor device is mounted on a circuit board and a method for mounting the same, and more particularly, to a method for forming an electrode of a semiconductor device mounted face-down. And how to implement it.
【０００２】[0002]
【従来の技術】従来、半導体装置の回路基板上への実装
には半田付けがよく利用されていたが、近年、半導体装
置のパッケージの小型化と接続端子数の増加により、接
続端子間隔が狭くなり、従来の半田付け技術で対処する
ことが次第に困難になってきた。2. Description of the Related Art Conventionally, soldering has often been used for mounting a semiconductor device on a circuit board. However, in recent years, the spacing between connection terminals has been reduced due to the miniaturization of the package of the semiconductor device and the increase in the number of connection terminals. It has become increasingly difficult to deal with the conventional soldering technology.
【０００３】そこで、最近では裸の半導体装置を回路基
板上に直付けして実装面積の小型化と効率的使用を図ろ
うとする方法が考案されてきた。Therefore, recently, a method has been devised in which a bare semiconductor device is directly mounted on a circuit board in order to reduce the mounting area and use the device efficiently.
【０００４】なかでも、半導体装置を回路基板に接続す
るに際し、あらかじめ半導体装置のアルミ電極パッド上
に密着金属や拡散防止金属の蒸着膜とこの上にメッキに
より形成した半田層とからなる電極構造を有する半導体
装置を下向き（フェースダウン）にして、高温に加熱し
て半田を回路基板の端子電極に融着する実装構造が、接
続後の機械的強度が強く、接続が一括にできることなど
から有効な方法であるとされている。（例えば、工業調
査会、１９８０年１月１５日発行、日本マイクロエレク
トロニクス協会編、『ＩＣ化実装技術』）以下図面を参
照しながら、上述した従来の半導体装置の電極形成方法
と実装方法の一例について説明する。In particular, when connecting a semiconductor device to a circuit board, an electrode structure composed of a deposited film of an adhesion metal or a diffusion preventing metal on an aluminum electrode pad of the semiconductor device in advance and a solder layer formed thereon by plating is used. A mounting structure in which the semiconductor device is turned down (face down) and heated to a high temperature to fuse the solder to the terminal electrodes of the circuit board is effective because the mechanical strength after connection is strong and the connection can be made at once. It is said to be the way. (For example, Industrial Research Council, published on January 15, 1980, edited by the Japan Microelectronics Association, "IC mounting technology") An example of the above-described electrode forming method and mounting method of the conventional semiconductor device with reference to the drawings. Will be described.
【０００５】（図５）は従来の半田バンプ電極を有する
半導体装置の電極形成方法の概略説明図であり、（図
６）は上記半田バンプ電極の電極構造の概略説明図であ
り、（図７）は上記半導体装置の実装構造の概略説明図
である。FIG. 5 is a schematic explanatory view of a conventional method for forming an electrode of a semiconductor device having solder bump electrodes, and FIG. 6 is a schematic explanatory view of the electrode structure of the solder bump electrode. () Is a schematic explanatory view of a mounting structure of the semiconductor device.
【０００６】（図５）において、１９は半導体装置のＩ
Ｃ基板であり、２０はアルミ電極パッドである。２１は
密着金属膜であり、２２は拡散防止金属膜である。２３
はパッシベーション膜であり、２４はフォトレジスト膜
である。２５はメッキ後の半田バンプであり、２６はリ
フロー後の半田バンプである。（図７）において、２７
は回路基板であり、２８は端子電極である。In FIG. 5, reference numeral 19 denotes the I of the semiconductor device.
Reference numeral 20 denotes an aluminum electrode pad. 21 is an adhesion metal film, and 22 is a diffusion prevention metal film. 23
Is a passivation film, and 24 is a photoresist film. Reference numeral 25 denotes a solder bump after plating, and reference numeral 26 denotes a solder bump after reflow. In FIG.
Is a circuit board, and 28 is a terminal electrode.
【０００７】以上のように構成された従来の半田バンプ
電極を有する半導体装置の電極形成方法と実装方法につ
いて、以下その概略を説明する。[0007] An outline of an electrode forming method and a mounting method of a conventional semiconductor device having a solder bump electrode configured as described above will be described below.
【０００８】まず、（図５）の（ａ）に示すように半導
体装置のＩＣ基板１９のアルミ電極パッド２０上にＣｕ
などの密着金属膜２１およびＣｒなどの拡散防止金属膜
２２を蒸着により形成する。その後、（図５）の（ｂ）
に示すように電極部以外をフォトレジスト２４で覆い、
メッキ法により半田を拡散防止金属膜２２上に析出させ
て（図５）の（ｃ）に示すキノコ状の半田バンプ２５を
得る。最後に、半田リフローを行うことにより、（図
５）の（ｄ）に示すように半田バンプ２６を形成して
（図６）の電極構造の半田バンプ電極を得る。First, as shown in FIG. 5A, a Cu is placed on an aluminum electrode pad 20 of an IC substrate 19 of a semiconductor device.
And a diffusion preventing metal film 22 such as Cr are formed by vapor deposition. Then, (b) of FIG.
As shown in FIG. 7, the portions other than the electrode portion are covered with a photoresist 24,
Solder is deposited on the diffusion preventing metal film 22 by a plating method to obtain a mushroom-shaped solder bump 25 shown in FIG. Finally, by performing solder reflow, the solder bumps 26 are formed as shown in FIG. 5D to obtain solder bump electrodes having the electrode structure shown in FIG.
【０００９】さらに、以上のようにして得た半田バンプ
電極を有する半導体装置を、回路基板２７の所定の位置
に位置合わせを行ってフェースダウンで積載した後、２
００〜３００℃の高温に加熱して半田バンプ２６を溶融
し、端子電極２８に融着することで（図７）の実装構造
で半導体装置の実装を行うものである。Further, the semiconductor device having the solder bump electrodes obtained as described above is aligned face-to-face at a predetermined position on the circuit board 27 and loaded face-down.
The semiconductor device is mounted with the mounting structure shown in FIG. 7 by heating the solder bumps 26 to a high temperature of 00 to 300 ° C. and fusing the solder bumps 26 to the terminal electrodes 28.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら上記のよ
うな半導体装置の電極形成方法や実装方法においては、 １．メッキ法により半田バンプを形成するために、メッ
キ液からの半導体装置の汚染を洗浄により防ぐ必要があ
り、電極形成方法が複雑となり汎用性に欠ける。 ２．高温に加熱して半田を溶融して端子電極と接続する
際に、ＩＣ基板と回路基板とのギャップを維持すること
が出来ないため、半田が広がって隣接とショートする危
険がある。などといった課題を有していた。However, in the above-described method for forming an electrode and mounting method of a semiconductor device, the following are required. In order to form the solder bumps by the plating method, it is necessary to prevent the contamination of the semiconductor device from the plating solution by washing, and the electrode forming method becomes complicated and lacks versatility. 2. When heating to a high temperature to melt the solder and connect it to the terminal electrodes, it is not possible to maintain the gap between the IC substrate and the circuit board. And so on.
【００１１】本発明は上記の課題に鑑みてなされたもの
であり、その目的とするところは、半導体装置と回路基
板とを容易に信頼性良く、かつ、微細ピッチで接続する
ことを可能とする半導体装置の電極形成方法と実装方法
を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to make it possible to easily and reliably connect a semiconductor device and a circuit board at a fine pitch. An object of the present invention is to provide a method of forming electrodes and a method of mounting a semiconductor device.
【００１２】[0012]
【課題を解決するための手段】本発明は上記の課題を解
決するため、フェースダウンで回路基板に実装する半導
体装置において、半導体装置のアルミ電極パッド部上に
突起状のバンプ電極を備え、加熱装置を具備した吸着装
置で半導体装置の裏面を吸着した後、半導体装置の表面
のバンプ電極を低融点合金箔に接触させ、加熱装置によ
り半導体装置を加熱してバンプ電極と合金箔の接触部分
の低融点合金をバンプ電極上に転写した後、回路基板の
端子電極に位置合わせして積載して、再び加熱装置によ
り半導体装置を加熱してバンプ電極上の低融点合金と端
子電極を接合して半導体装置の実装を行うことを特徴と
して、信頼性の高い半導体装置の回路基板への実装を実
現しようとするものである。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a semiconductor device mounted face-down on a circuit board, comprising a bump electrode having a protruding shape on an aluminum electrode pad portion of the semiconductor device. After the back surface of the semiconductor device is suctioned by the suction device equipped with the device, the bump electrode on the front surface of the semiconductor device is brought into contact with the low melting point alloy foil, and the semiconductor device is heated by the heating device to form a contact portion between the bump electrode and the alloy foil. After transferring the low melting point alloy onto the bump electrode, the semiconductor device is positioned and mounted on the terminal electrode of the circuit board, and the semiconductor device is heated again by the heating device to join the low melting point alloy on the bump electrode and the terminal electrode. It is an object of the present invention to mount a semiconductor device on a circuit board with high reliability.
【００１３】[0013]
【作用】本発明は、半導体装置のアルミ電極パッド部上
に形成した突起形状のバンプ電極上に低融点合金箔を溶
融させて低融点合金の接合層を形成することにより、半
導体装置を汚染することなく電極形成でき、半導体装置
を回路基板の端子電極に接合する際に接合層が隣接とシ
ョートすることなく微細ピッチでの接合が可能となり、
かつ、信頼性の高い半導体装置の実装構造が実現でき
る。The present invention contaminates a semiconductor device by melting a low-melting-point alloy foil on a bump-shaped bump electrode formed on an aluminum electrode pad portion of a semiconductor device to form a low-melting-point alloy bonding layer. Electrodes can be formed without joining, and when joining a semiconductor device to a terminal electrode of a circuit board, joining at a fine pitch becomes possible without short-circuiting of a joining layer to an adjacent layer.
In addition, a highly reliable semiconductor device mounting structure can be realized.
【００１４】[0014]
【実施例】以下、本発明の一実施例の半導体装置の電極
形成方法と実装方法について、図面を参照しながら説明
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming electrodes and a mounting method for a semiconductor device according to one embodiment of the present invention will be described below with reference to the drawings.
【００１５】（図１）は、本発明の一実施例における半
導体装置の電極形成方法の概略説明図であり、（図２）
は、上記実施例の電極形成方法による半導体装置の電極
構造の概略説明図であり、（図３）は、本発明の一実施
例における半導体装置の実装方法の概略説明図であり、
（図４）は上記実施例により実装された半導体装置の実
装構造の概略説明図である。FIG. 1 is a schematic explanatory view of a method for forming an electrode of a semiconductor device according to one embodiment of the present invention, and FIG.
FIG. 3 is a schematic explanatory view of an electrode structure of a semiconductor device according to the electrode forming method of the above embodiment, and FIG. 3 is a schematic explanatory view of a semiconductor device mounting method in one embodiment of the present invention;
FIG. 4 is a schematic explanatory view of a mounting structure of the semiconductor device mounted according to the above embodiment.
【００１６】（図１）において、１は半導体装置のＩＣ
基板であり、２はアルミ電極パッドである。３は突起状
のバンプ電極であり、４はパッシベーション膜である。
５は低融点合金箔であり、６は吸着装置である。７は加
熱装置であり、８は低融点合金の接合層である。（図
３）において、９は本実施例の電極が形成された半導体
装置である。１０は吸着装置であり、１１は加熱装置で
ある。１２はロール状の低融点合金箔の供給リールであ
り、１３は巻き取りリールである。１４は水平に張られ
た低融点合金箔であり、１５は転写ステージである。１
６は半導体装置と回路基板の位置合わせ用のステージで
ある。１７は回路基板であり、１８は端子電極である。In FIG. 1, reference numeral 1 denotes an IC of a semiconductor device.
A substrate 2 is an aluminum electrode pad. Reference numeral 3 denotes a bump electrode having a projection shape, and reference numeral 4 denotes a passivation film.
5 is a low melting point alloy foil, and 6 is an adsorption device. 7 is a heating device, and 8 is a bonding layer of a low melting point alloy. In FIG. 3, reference numeral 9 denotes a semiconductor device on which the electrodes of the present embodiment are formed. Reference numeral 10 denotes an adsorption device, and 11 denotes a heating device. Numeral 12 is a supply reel for roll-shaped low melting point alloy foil, and numeral 13 is a take-up reel. Reference numeral 14 denotes a low-melting alloy foil stretched horizontally, and 15 denotes a transfer stage. 1
Reference numeral 6 denotes a stage for positioning the semiconductor device and the circuit board. 17 is a circuit board, and 18 is a terminal electrode.
【００１７】以上のように構成された半導体装置の電極
形成方法と実装方法について、以下図面を用いて説明す
る。An electrode forming method and a mounting method of the semiconductor device configured as described above will be described below with reference to the drawings.
【００１８】まず、（図１）の（ａ）に示すように公知
の方法により半導体装置のＩＣ基板１のアルミ電極パッ
ド２上に突起状のバンプ電極３を形成する。First, as shown in FIG. 1A, a bump-shaped bump electrode 3 is formed on an aluminum electrode pad 2 of an IC substrate 1 of a semiconductor device by a known method.
【００１９】次に、（図１）の（ｂ）に示すように突起
状のバンプ電極３の頂上部を半田からなる低融点合金箔
５に接触させた後、（図１）の（ｃ）に示すように半導
体装置のＩＣ基板１を加熱装置７により２００〜３００
℃に加熱してバンプ電極３と低融点合金箔５の接触部分
の低融点合金を溶融させて、バンプ電極３上に低融点合
金の接合層８を転写する。Next, as shown in FIG. 1B, the top of the bump-shaped bump electrode 3 is brought into contact with a low-melting-point alloy foil 5 made of solder, and then, as shown in FIG. As shown in the figure, the IC substrate 1 of the semiconductor device is
Then, the bonding layer 8 of the low-melting-point alloy is transferred onto the bump electrode 3 by heating to a temperature of 0 ° C. to melt the low-melting-point alloy at the contact portion between the bump electrode 3 and the low-melting-point alloy foil 5.
【００２０】上記の方法により、（図２）に示すような
半導体装置のアルミ電極パッド２上に突起状のバンプ電
極３と低融点合金の接合層８からなる電極構造が容易に
形成できる。By the above-described method, an electrode structure composed of the bump electrodes 3 having a projection shape and the bonding layer 8 of a low melting point alloy can be easily formed on the aluminum electrode pad 2 of the semiconductor device as shown in FIG.
【００２１】また、本実施例の半導体装置の実装方法
は、（図３）の（ａ）に示すようにパルスヒータなどの
加熱装置１１を具備した吸着装置１０で半導体装置９の
裏面を吸着した後、（図３）の（ｂ）に示すようにロー
ル状の低融点合金箔の供給リール１２から供給されて転
写ステージ１５上で水平に張られた半田からなる低融点
合金箔１４に半導体装置９の表面に形成した突起状のバ
ンプ電極を接触させる。In the method of mounting a semiconductor device according to the present embodiment, as shown in FIG. 3A, the back surface of the semiconductor device 9 is suctioned by a suction device 10 having a heating device 11 such as a pulse heater. Thereafter, as shown in (b) of FIG. 3B, the semiconductor device is supplied to the low melting point alloy foil 14 made of solder which is supplied from the supply reel 12 of the rolled low melting point alloy foil and stretched horizontally on the transfer stage 15. The protrusion-shaped bump electrodes formed on the surface of No. 9 are brought into contact with each other.
【００２２】この状態で加熱装置１１により半導体装置
９を２００〜３００℃に加熱して低融点合金をバンプ電
極上に転写する。In this state, the semiconductor device 9 is heated to 200 to 300 ° C. by the heating device 11 to transfer the low melting point alloy onto the bump electrodes.
【００２３】この後、転写済みの低融点合金箔は巻き取
りリール１３によって巻き取られる。Thereafter, the transferred low-melting alloy foil is taken up by a take-up reel 13.
【００２４】さらに、以上のようにして低融点合金の接
合層を転写した半導体装置９を、（図３）の（ｃ）に示
すように回路基板１７の所定の位置に位置合わせ用のス
テージ１６により位置合わせを行ってフェースダウンで
積載した後、再度吸着治具１０の加熱装置１１によって
２００〜３００℃に加熱して低融点合金の接合層を溶融
し、端子電極１８に接合することによって半導体装置の
実装を行う。Further, the semiconductor device 9 to which the bonding layer of the low melting point alloy has been transferred as described above is placed on a circuit board 17 at a predetermined position as shown in FIG. And the semiconductor device is heated to 200 to 300 ° C. again by the heating device 11 of the suction jig 10 to melt the bonding layer of the low melting point alloy, and bonded to the terminal electrode 18. Mount the device.
【００２５】上記の方法により、（図４）に示すように
低融点合金の接合層を端子電極１８と接合する際に、Ｉ
Ｃ基板１と回路基板１７とのギャップを突起状のバンプ
電極３により維持することができ、かつ、頂上部にのみ
低融点合金の接合層８を形成しているため、接合層の広
がりを規制することが可能となって隣接とショートする
危険がなく、微細ピッチでの接続が可能な半導体装置の
実装構造が得られる。According to the above method, when the bonding layer of the low melting point alloy is bonded to the terminal electrode 18 as shown in FIG.
The gap between the C-substrate 1 and the circuit board 17 can be maintained by the bump-shaped bump electrodes 3 and the low-melting-point alloy bonding layer 8 is formed only on the top, thus restricting the spread of the bonding layer. This makes it possible to obtain a mounting structure of a semiconductor device which can be connected at a fine pitch without danger of short-circuiting with an adjacent one.
【００２６】本発明の半導体装置の実装構造は、上記し
た方法により、従来の半田バンプ電極による実装構造で
は不可能であった半田の広がりの規制が突起状のバンプ
電極により可能となり、極めて安定で信頼性良く、か
つ、高密度に半導体装置を実装できる。According to the mounting structure of the semiconductor device of the present invention, the spread of solder, which was impossible with the conventional mounting structure using solder bump electrodes, can be controlled by the bump-shaped bump electrodes. A semiconductor device can be mounted with high reliability and high density.
【００２７】なお、本実施例においてバンプ電極の形状
を２段突起形状とすればその効果がより顕著に発揮でき
る。In this embodiment, if the shape of the bump electrode is a two-step projection, the effect can be more remarkably exhibited.
【００２８】また、本実施例においては突起状のバンプ
電極をメッキ法を用いて形成するとしたが、その形状が
突起状であればワイヤボンディングなど他の方法で形成
しても良い。Further, in the present embodiment, the bump electrodes in the form of protrusions are formed by plating, but if the shape is in the form of protrusions, they may be formed by other methods such as wire bonding.
【００２９】さらに、半導体装置をパルスヒータにより
必要時のみ加熱するとしたが、通常のヒータにより常時
加熱しても良い。Further, although the semiconductor device is heated by the pulse heater only when necessary, it may be constantly heated by a normal heater.
【００３０】また、低融点合金箔を半田からなるとした
が、その材質は半田に限られる物でなく、低融点合金か
らなるものであれば他の金属から形成しても良い。Although the low melting point alloy foil is made of solder, the material is not limited to solder, and may be made of another metal as long as it is made of a low melting point alloy.
【００３１】[0031]
【発明の効果】以上に説明したように、本発明の半導体
装置の電極形成方法と実装方法によれば、半導体装置の
アルミ電極パッド部上に形成した突起状のバンプ電極上
に低融点合金箔を溶融させて低融点合金の接合層を形成
することにより、メッキ液などにより半導体装置を汚染
することなく半導体装置にバンプ電極と接合層からなる
電極を形成することができるため、極めて汎用性が高
い。As described above, according to the electrode forming method and the mounting method of the semiconductor device of the present invention, the low melting point alloy foil is formed on the bump-shaped bump electrode formed on the aluminum electrode pad portion of the semiconductor device. Is melted to form a bonding layer of a low-melting-point alloy, so that an electrode composed of a bump electrode and a bonding layer can be formed on a semiconductor device without contaminating the semiconductor device with a plating solution or the like. high.
【００３２】さらに、突起状のバンプ電極の頂上部にの
み低融点合金の接合層を形成した電極構造を有すること
により、半導体装置を回路基板の端子電極に接合する際
に接合層の広がりの規制が可能となり、接合層が隣接と
ショートすることなく微細ピッチでの接合が可能とな
り、極めて安定で信頼性良く、かつ、高密度に半導体装
置を実装できる。Further, by having an electrode structure in which a bonding layer of a low-melting-point alloy is formed only on the top of the bump-shaped bump electrode, the spread of the bonding layer when the semiconductor device is bonded to the terminal electrode of the circuit board is restricted. This makes it possible to perform bonding at a fine pitch without short-circuiting the bonding layer to the adjacent layer, and it is possible to mount a semiconductor device with high stability, high reliability, and high density.
【図１】本発明の一実施例における半導体装置の電極形
成方法の概略説明図である。FIG. 1 is a schematic diagram illustrating a method for forming an electrode of a semiconductor device according to an embodiment of the present invention.
【図２】本発明の電極形成方法による半導体装置の電極
構造の概略説明図である。FIG. 2 is a schematic explanatory view of an electrode structure of a semiconductor device according to the electrode forming method of the present invention.
【図３】本発明の一実施例における半導体装置の実装方
法の概略説明図である。FIG. 3 is a schematic explanatory view of a method for mounting a semiconductor device according to an embodiment of the present invention.
【図４】本発明の実施例により実装された半導体装置の
実装構造の実装構造の概略説明図である。FIG. 4 is a schematic explanatory diagram of a mounting structure of a mounting structure of a semiconductor device mounted according to an embodiment of the present invention.
【図５】従来の半田バンプ電極を有する半導体装置の電
極形成方法の概略説明図である。FIG. 5 is a schematic explanatory view of a conventional electrode forming method of a semiconductor device having solder bump electrodes.
【図６】従来の半田バンプ電極の電極構造の概略説明図
である。FIG. 6 is a schematic explanatory view of an electrode structure of a conventional solder bump electrode.
【図７】従来の半田バンプ電極により実装された半導体
装置の実装構造の概略説明図である。FIG. 7 is a schematic explanatory view of a mounting structure of a semiconductor device mounted by a conventional solder bump electrode.
１ 半導体装置のＩＣ基板 ２ アルミ電極パッド ３ 突起状のバンプ電極 ４ パッシベーション膜 ５ 低融点合金箔 ６ 吸着装置 ７ 加熱装置 ８ 低融点合金の接合層 ９ 半導体装置 １０ 吸着装置 １１ 加熱装置 １２ 供給リール １３ 巻き取りリール １４ 低融点合金箔 １５ 転写ステージ １６ 位置合わせ用のステージ １７ 回路基板 １８ 端子電極 １９ ＩＣ基板 ２０ アルミ電極パッド ２１ 密着金属膜 ２２ 拡散防止金属膜 ２３ パッシベーション膜 ２４ フォトレジスト膜 ２５ メッキ後の半田バンプ ２６ リフロー後の半田バンプ ２７ 回路基板 ２８ 端子電極 REFERENCE SIGNS LIST 1 IC substrate of semiconductor device 2 Aluminum electrode pad 3 Protruding bump electrode 4 Passivation film 5 Low melting point alloy foil 6 Suction device 7 Heating device 8 Low melting point alloy bonding layer 9 Semiconductor device 10 Suction device 11 Heating device 12 Supply reel 13 Take-up reel 14 Low melting point alloy foil 15 Transfer stage 16 Positioning stage 17 Circuit board 18 Terminal electrode 19 IC board 20 Aluminum electrode pad 21 Adhesive metal film 22 Diffusion prevention metal film 23 Passivation film 24 Photoresist film 25 After plating Solder bump 26 Solder bump after reflow 27 Circuit board 28 Terminal electrode
Claims (9)
導体装置の電極形成方法において、半導体装置のアルミ
電極パッド部上に突起状のバンプ電極を備え、上記バン
プ電極を低融点合金箔に接触させた後、半導体装置を加
熱してバンプ電極と合金箔の接触部分を溶融させて低融
点合金をバンプ電極上に転写して接合層を形成すること
を特徴とする半導体装置の電極形成方法。In a method for forming an electrode of a semiconductor device to be mounted face down on a circuit board, a bump electrode having a protruding shape is provided on an aluminum electrode pad portion of the semiconductor device, and the bump electrode is brought into contact with a low melting point alloy foil. A method of forming an electrode for a semiconductor device, comprising: heating the semiconductor device to melt a contact portion between the bump electrode and the alloy foil; and transferring the low melting point alloy onto the bump electrode to form a bonding layer.
ることを特徴とする請求項１記載の半導体装置の電極形
成方法。2. The method for forming an electrode of a semiconductor device according to claim 1, wherein the projecting bump electrode has a two-step projecting shape.
ることを特徴とする請求項１記載の半導体装置の電極形
成方法。3. The method for forming an electrode of a semiconductor device according to claim 1, wherein said bump-shaped bump electrode is made of Au.
を特徴とする請求項１記載の半導体装置の電極形成方
法。4. The method according to claim 1, wherein the material of the low melting point alloy foil is made of solder.
の箔からなることを特徴とする請求項１記載の半導体装
置の電極形成方法。5. The method for forming an electrode of a semiconductor device according to claim 1, wherein the low melting point alloy foil is made of a foil having a thickness of 20 to 100 μm.
て低融点合金を転写することを特徴とする請求項１記載
の半導体装置の電極形成方法。6. The method according to claim 1, wherein the low melting point alloy is transferred by heating the semiconductor device with a pulse heater.
導体装置の実装方法において、加熱装置を具備した吸着
装置で半導体装置の裏面を吸着した後、半導体装置の表
面に形成したバンプ電極を低融点合金箔に接触させ、加
熱装置により半導体装置を加熱して低融点合金をバンプ
電極上に転写した後、回路基板の端子電極に位置合わせ
して積載して、再び加熱装置により半導体装置を加熱し
てバンプ電極上の低融点合金と端子電極を接合して半導
体装置の実装を行うことを特徴とする半導体装置の実装
方法。7. A method of mounting a semiconductor device face-down on a circuit board, wherein the back surface of the semiconductor device is suctioned by a suction device having a heating device, and then the bump electrode formed on the front surface of the semiconductor device is made of a low melting point alloy. After contacting the foil and heating the semiconductor device with a heating device to transfer the low melting point alloy onto the bump electrodes, the semiconductor device is positioned and loaded on the terminal electrodes of the circuit board, and the semiconductor device is heated again by the heating device. A method for mounting a semiconductor device, comprising: mounting a semiconductor device by bonding a low melting point alloy on a bump electrode and a terminal electrode.
と巻き取り部により連続的に低融点合金箔を供給するこ
とを特徴とする請求項７記載の半導体装置の実装方法。8. The semiconductor device mounting method according to claim 7, wherein the low melting point alloy foil is in a roll shape, and the low melting point alloy foil is continuously supplied by a supply section and a winding section.
する請求項７記載の半導体装置の実装方法。9. The method according to claim 7, wherein the low-melting-point alloy is made of solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3145868A JP2953111B2 (en) | 1991-06-18 | 1991-06-18 | Electrode forming method and mounting method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3145868A JP2953111B2 (en) | 1991-06-18 | 1991-06-18 | Electrode forming method and mounting method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04369227A JPH04369227A (en) | 1992-12-22 |
| JP2953111B2 true JP2953111B2 (en) | 1999-09-27 |
Family
ID=15394916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3145868A Expired - Fee Related JP2953111B2 (en) | 1991-06-18 | 1991-06-18 | Electrode forming method and mounting method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2953111B2 (en) |
-
1991
- 1991-06-18 JP JP3145868A patent/JP2953111B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04369227A (en) | 1992-12-22 |
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