JP2950971B2 - Light sensor - Google Patents
Light sensorInfo
- Publication number
- JP2950971B2 JP2950971B2 JP2326609A JP32660990A JP2950971B2 JP 2950971 B2 JP2950971 B2 JP 2950971B2 JP 2326609 A JP2326609 A JP 2326609A JP 32660990 A JP32660990 A JP 32660990A JP 2950971 B2 JP2950971 B2 JP 2950971B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical sensor
- electrode layer
- back electrode
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は可視光センサなどに用いられる光センサに関
する。The present invention relates to an optical sensor used for a visible light sensor or the like.
（ロ）従来の技術 アモルファスシリコンの如きアモルファス半導体等の
薄膜状光半導体層を光活性層とする光センサが実用化さ
れるに至ってきた。アモルファス半導体を用いた光セン
サは波長感度が可視光領域に高い感度をもっており、結
晶系半導体を用いたものより短波長領域に高感度である
という特長を有する。(B) Conventional technology An optical sensor using a thin-film optical semiconductor layer of an amorphous semiconductor such as amorphous silicon or the like as a photoactive layer has been put to practical use. An optical sensor using an amorphous semiconductor has a feature that the wavelength sensitivity is high in a visible light region and is higher in a short wavelength region than that using a crystalline semiconductor.
第３図に従い従来の光センサについて説明する。第３
図は従来の光センサを示す断面図である。A conventional optical sensor will be described with reference to FIG. Third
FIG. 1 is a sectional view showing a conventional optical sensor.
第３図において、１は例えばガラス・石英等から成る
透光性の支持基板、２は該支持基板１の一方の主面に設
けられた感光領域で、該感光領域２は支持基板１側から
透明電極層３、薄膜状半導体層４及び裏面電極層５が順
次積層された構造を持つ。上記透明電極層３は酸化スズ
（SnO2）・酸化インジウムスズ（ITO）等の透光性導電
性材料から成り、上記半導体層４はｐ型層、ｉ型層、ｎ
型層を重畳せしめたpin接合を有する膜厚サブミクロン
ないしミクロンオーダのアモルファスシリコンにて形成
される。更に上記裏面電極層５は該ｎ型アモルファスシ
リコンとオーミック接触するアルミニウム（Al）層51お
よびアルミニウムを保護するためこのアルミニウム層上
に設けられたチタン（Ti）からなる保護層52から成って
いる。In FIG. 3, reference numeral 1 denotes a light-transmitting support substrate made of, for example, glass or quartz, and reference numeral 2 denotes a photosensitive region provided on one main surface of the support substrate 1; It has a structure in which a transparent electrode layer 3, a thin film semiconductor layer 4, and a back electrode layer 5 are sequentially laminated. The transparent electrode layer 3 is made of a transparent conductive material such as tin oxide (SnO 2 ) and indium tin oxide (ITO), and the semiconductor layer 4 is a p-type layer, an i-type layer, and an n-type layer.
It is formed of submicron to micron order amorphous silicon having a pin junction with a mold layer superimposed. Further, the back electrode layer 5 includes an aluminum (Al) layer 51 in ohmic contact with the n-type amorphous silicon and a protective layer 52 made of titanium (Ti) provided on the aluminum layer to protect the aluminum.
そして、上記支持基板１並びに透明電極層３を透過し
て光が薄膜半導体層４に照射せしめられると、上記両電
極３、５間に光起電力が生起せしめられる。When light passes through the support substrate 1 and the transparent electrode layer 3 and irradiates the thin film semiconductor layer 4, a photovoltaic force is generated between the electrodes 3 and 5.
上述した従来の光センサにおいては、ITO等の透光性
材料からなる透明電極層３を経て、薄膜半導体層４に入
射され、この薄膜半導体層４で吸収されない光は、裏面
電極層５で反射され、再び半導体層４に入射される。In the above-described conventional optical sensor, light that is incident on the thin film semiconductor layer 4 via the transparent electrode layer 3 made of a translucent material such as ITO and is not absorbed by the thin film semiconductor layer 4 is reflected by the back electrode layer 5. Then, the light is incident on the semiconductor layer 4 again.
（ハ）発明が解決しようとする課題 前述した裏面電極５で反射され、再び半導体層４に入
射される反射光は、長波長側の光が大部分であり、この
反射光により生じる光起電力のため、従来の光センサは
人間の視感度より長波長側の感度が高いという特性を有
する。そのため、従来は人間の視感度に合わせるため
に、光センサの前面に赤外線吸収フィルタを設ける必要
があった。(C) Problems to be Solved by the Invention Most of the reflected light reflected by the back electrode 5 and incident on the semiconductor layer 4 is light on the long wavelength side, and the photovoltaic power generated by the reflected light is large. Therefore, the conventional optical sensor has a characteristic that the sensitivity on the long wavelength side is higher than the human visual sensitivity. Therefore, conventionally, it was necessary to provide an infrared absorption filter in front of the optical sensor in order to match human visibility.
本発明は上述した従来の問題点に鑑みてなされたもの
にして、赤外線吸収フィルタを組み合わせることなく精
度の高い可視光測定用の光センサを提供することをその
課題とする。It is an object of the present invention to provide an optical sensor for measuring visible light with high accuracy without combining an infrared absorption filter, in view of the above-mentioned conventional problems.
（ニ）課題を解決するための手段 本発明は、光入射側となる透光性基板の一主面に、透
明電極層、薄膜状半導体層及び、アルミニウム層と該ア
ルミニウム層を保護する保護層とからなる裏面電極層が
この順で積層された光センサであって、前記薄膜半導体
層側に位置する裏面電極層に、前記アルミニウム層より
も反射率の低いチタンからなる低反射率金属を用いたこ
とを特徴とする。(D) Means for Solving the Problems According to the present invention, a transparent electrode layer, a thin-film semiconductor layer, an aluminum layer and a protective layer for protecting the aluminum layer are provided on one main surface of the light-transmitting substrate on the light incident side. And a back-electrode layer composed of titanium having a lower reflectance than the aluminum layer is used for the back-electrode layer located on the thin-film semiconductor layer side. It is characterized by having been.
（ホ）作用 本発明は、前記薄膜半導体層側に位置する裏面電極層
に、前記アルミニウム層よりも反射率の低いチタンから
なる低反射率金属層を用いているので、裏面電極層から
の反射が抑制され、光センサの長波長側の感度が低くな
り、人間の視感度に近似した分光感度を持つ。(E) Function In the present invention, since a low-reflectance metal layer made of titanium having a lower reflectance than the aluminum layer is used for the back electrode layer located on the thin film semiconductor layer side, reflection from the back electrode layer is performed. Is suppressed, the sensitivity of the optical sensor on the long wavelength side decreases, and the optical sensor has a spectral sensitivity close to human visibility.
（ヘ）実施例 以下、本発明の実施例につき第１図に従い説明する。
尚、従来例と同一部分には同一符合を付し説明を省略す
る。(F) Embodiment An embodiment of the present invention will be described below with reference to FIG.
Note that the same parts as those in the conventional example are denoted by the same reference numerals, and description thereof is omitted.
第１図は本発明の一実施例を示した断面図である。 FIG. 1 is a sectional view showing an embodiment of the present invention.
第１図において、本発明の特徴は裏面電極層50にあ
る。本発明の裏面電極層50は、薄膜半導体層４側に位置
する、即ちｎ型アモルファスシリコンとオーミック接触
する部分に反射率の低い低反射率金属層53が設けられ
る。この実施例においては、膜厚100Å以上のチタンか
らなる低反射率金属層53が、蒸着またはスパッタリング
により設けられている。そしてこの低反射率金属層53の
上にアルミニウム層51およびアルミニウムを保護するチ
タンからなる保護層52を設けて裏面電極50を構成してい
る。In FIG. 1, the feature of the present invention resides in the back electrode layer 50. In the back electrode layer 50 of the present invention, a low reflectance metal layer 53 having a low reflectance is provided on a portion located on the thin film semiconductor layer 4 side, that is, in a portion in ohmic contact with the n-type amorphous silicon. In this embodiment, a low-reflectance metal layer 53 made of titanium having a thickness of 100 mm or more is provided by vapor deposition or sputtering. On the low-reflectance metal layer 53, an aluminum layer 51 and a protective layer 52 made of titanium for protecting aluminum are provided to form the back electrode 50.
このように、裏面電極層50の薄膜半導体層４側に位置
する部分に、アルミニウム層51よりも反射率の低いチタ
ンからなる低反射率金属層５を設けることで、入射光の
裏面電極50側からの反射が抑えられ、光センサの長波長
側の感度が低くなり、人間の視感度に近似した分光特性
が得られる。As described above, by providing the low-reflectance metal layer 5 made of titanium having a lower reflectance than the aluminum layer 51 on the portion of the back electrode layer 50 located on the side of the thin film semiconductor layer 4, incident light can be provided on the back electrode 50 side. , The sensitivity on the long wavelength side of the optical sensor is reduced, and spectral characteristics similar to human visibility are obtained.
第２図は上述した第１図に示す本発明の実施例に係る
光センサ（Ａ）と第３図に示した従来の光センサ（Ｂ）
の分光特性を示す。この図より明らかなように、この発
明に係る光センサ（Ａ）は従来の光センサ（Ｂ）より、
長波長側の感度が低くなり、人間の視感度（Ｃ）に近似
した分光特性が得られる。従って、赤外線吸収フィルタ
と組み合わせることなく、人間の視感度に類似した精度
の高い可視光測定用の光センサを作成することができ
る。FIG. 2 shows the optical sensor (A) according to the embodiment of the present invention shown in FIG. 1 and the conventional optical sensor (B) shown in FIG.
Shows the spectral characteristics of. As is clear from this figure, the optical sensor (A) according to the present invention is more different than the conventional optical sensor (B).
The sensitivity on the long wavelength side is reduced, and spectral characteristics close to human visibility (C) can be obtained. Therefore, an optical sensor for measuring visible light with high accuracy similar to human visibility can be created without combining with an infrared absorption filter.
（ト）発明の効果 以上説明したように、本発明は、薄膜半導体層側に位
置する裏面電極層に反射率の低い金属を用いているの
で、裏面電極層からの反射が抑制され、光センサの長波
長側の感度が低くなり、人間の視感度に近似した分光感
度を持ち、赤外線吸収フィルタと組み合わせることな
く、構造簡単にして精度の高い可視光測定用の光センサ
を作成することができる。(G) Effect of the Invention As described above, in the present invention, since a metal having low reflectance is used for the back electrode layer located on the thin film semiconductor layer side, reflection from the back electrode layer is suppressed, and the optical sensor The sensitivity on the long wavelength side is low, the spectral sensitivity is close to human visibility, and it is possible to create a highly accurate optical sensor for visible light measurement with a simple structure without combining with an infrared absorption filter. .
第１図は本発明の一実施例を示す断面図である。 第２図は本発明の実施例に係る光センサ（Ａ）と従来の
光センサ（Ｂ）の分光特性を示す特性図である。 第３図は従来装置を示す断面図である。 １……基板、３……透明電極、４……半導体層、 ５、50……裏面電極、51……アルミニウム層、 52……保護層、53……低反射金属層。FIG. 1 is a sectional view showing an embodiment of the present invention. FIG. 2 is a characteristic diagram showing spectral characteristics of the optical sensor (A) according to the embodiment of the present invention and the conventional optical sensor (B). FIG. 3 is a sectional view showing a conventional apparatus. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 3 ... transparent electrode, 4 ... semiconductor layer, 5, 50 ... back electrode, 51 ... aluminum layer, 52 ... protective layer, 53 ... low-reflection metal layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中島 三郎 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (72)発明者 岸 靖雄 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 平２−284476（ＪＰ，Ａ) 特開 昭51−11586（ＪＰ，Ａ) 特開 平３−42879（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/10 H01L 31/02 H01L 31/04 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Saburo Nakajima 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Yasuo Kishi 2-18-18 Keihanhondori, Moriguchi-shi, Osaka (56) References JP-A-2-284476 (JP, A) JP-A-51-11586 (JP, A) JP-A-3-42879 (JP, A) (58) Fields investigated ( Int.Cl. 6 , DB name) H01L 31/10 H01L 31/02 H01L 31/04
Claims (1)
明電極層、薄膜状半導体層及び、アルミニウム層と該ア
ルミニウム層を保護する保護層とからなる裏面電極層が
この順で積層された光センサであって、 前記薄膜半導体層側に位置する裏面電極層に、前記アル
ミニウム層よりも反射率の低いチタンからなる低反射率
金属層を用いたことを特徴とする光センサ。1. A transparent electrode layer, a thin-film semiconductor layer, and a back electrode layer comprising an aluminum layer and a protective layer for protecting the aluminum layer are arranged in this order on one main surface of the light-transmitting substrate on the light incident side. An optical sensor, wherein a low-reflectance metal layer made of titanium having a lower reflectance than the aluminum layer is used for a back electrode layer located on the thin film semiconductor layer side. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2326609A JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2326609A JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196491A JPH04196491A (en) | 1992-07-16 |
| JP2950971B2 true JP2950971B2 (en) | 1999-09-20 |
Family
ID=18189720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2326609A Expired - Lifetime JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2950971B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003211809A1 (en) | 2002-03-01 | 2003-09-16 | Sharp Kabushiki Kaisha | Light emitting device and display unit using the light emitting device and reading device |
-
1990
- 1990-11-28 JP JP2326609A patent/JP2950971B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04196491A (en) | 1992-07-16 |
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