JP2939906B1 - Ion beam processing equipment - Google Patents
Ion beam processing equipmentInfo
- Publication number
- JP2939906B1 JP2939906B1 JP15771898A JP15771898A JP2939906B1 JP 2939906 B1 JP2939906 B1 JP 2939906B1 JP 15771898 A JP15771898 A JP 15771898A JP 15771898 A JP15771898 A JP 15771898A JP 2939906 B1 JP2939906 B1 JP 2939906B1
- Authority
- JP
- Japan
- Prior art keywords
- sample
- ion beam
- gas
- shield plate
- gas gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 19
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 8
- 238000011109 contamination Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000011163 secondary particle Substances 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 45
- 239000010408 film Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
【要約】
【課題】 ガス銃の加熱により発生する温度勾配による
試料のドリフトの発生やガス銃の摺動部から発生する発
塵を低減する。被加工物に雰囲気中の残留ガスが混入す
るのを防ぐ。
【解決手段】 試料と原料ガスリザーバの間にガス銃先
端のみが通るようなシールド板を設けて、ガス銃の熱を
シールド板で吸収して試料に伝わらないようにすること
でドリフトを低減する。同時にシールド板が物理的な障
害となるため、ガス銃摺動部から発生した発塵が試料に
直接落下するのも防止する。上記シールド板を冷却する
ことにより、雰囲気中の残留ガスがトラップされ、加工
中に残留ガスが混入するのを防止する。An object of the present invention is to reduce drift of a sample due to a temperature gradient generated by heating a gas gun and dust generated from a sliding portion of the gas gun. Prevent the residual gas in the atmosphere from being mixed into the workpiece. SOLUTION: A shield plate is provided between a sample and a source gas reservoir so that only the tip of a gas gun passes therethrough, and the heat of the gas gun is absorbed by the shield plate so as not to be transmitted to the sample, thereby reducing drift. At the same time, since the shield plate acts as a physical obstacle, dust generated from the sliding portion of the gas gun is also prevented from directly falling on the sample. By cooling the shield plate, the residual gas in the atmosphere is trapped, and the mixing of the residual gas during processing is prevented.
Description
【０００１】[0001]
【産業上の利用分野】本発明は集積回路製造などにおけ
る、集束イオンビームを用いた加工装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus using a focused ion beam in the manufacture of integrated circuits.
【０００２】[0002]
【従来の技術】集束イオンビームを用いた加工装置は、
ミリング機能やガス雰囲気中での薄膜堆積機能の微細加
工能力と高い位置決め精度を利用して、集積回路の故障
診断や修正、フォトマスクの欠陥修正、半導体デバイス
断面等の透過型電子顕微鏡(TEM)用の試料作成や磁気抵
抗(MR)効果を利用した磁気ヘッドの加工等に用いられて
いる。2. Description of the Related Art A processing apparatus using a focused ion beam includes:
Utilizing the fine processing capability and high positioning accuracy of the milling function and the thin film deposition function in a gas atmosphere, transmission electron microscope (TEM) for fault diagnosis and correction of integrated circuits, defect correction of photomasks, cross section of semiconductor devices, etc. It is used for the preparation of samples for use and the processing of magnetic heads utilizing the magnetoresistance (MR) effect.
【０００３】上記のイオンビーム加工装置では、イオン
ビームアシストエッチングやイオンビームデポジション
に様々な物質が利用されている。例えば、イオンビーム
アシストエッチングにはXeF2等のハロゲン含有ガスが使
用されている。フォトマスク修正時の遮光膜用カーボン
薄膜を堆積するときには原料としてピレン、スチレン等
が用いられ、集積回路の配線修正用のタングステン薄膜
を堆積するときにはW(CO)6等が用いられている。In the above-described ion beam processing apparatus, various substances are used for ion beam assisted etching and ion beam deposition. For example, a halogen-containing gas such as XeF 2 is used for ion beam assisted etching. When depositing a carbon thin film for a light-shielding film at the time of photomask repair, pyrene, styrene, or the like is used as a raw material, and when depositing a tungsten thin film for wiring repair of an integrated circuit, W (CO) 6 or the like is used.
【０００４】上記のフォトマスク修正時の遮光膜用カー
ボン薄膜原料の例からわかるように、使用される物質は
ガスとは限らず、常温で固体または液体のものも使用さ
れる。原料がガスの場合には、減圧下で試料近傍の設置
されたノズル状のガス銃からそのまま供給される。原料
が常温で固体または液体の場合、原料を保持しているリ
ザーバを加熱して気化させてから、試料の近傍に設けら
れたガス銃のノズル先端まで導いて試料上に供給するこ
とが行われている。このとき、ガス銃内の流路も途中で
ミリングを加速するガスや薄膜の堆積に使用されるガス
が結露または凝固しないように加熱され、供給ガスの流
量はマスフローコントローラで一定になるように制御さ
れている。As can be seen from the above examples of the raw material of the carbon thin film for the light-shielding film at the time of repairing the photomask, the substance to be used is not limited to gas, but may be solid or liquid at room temperature. When the raw material is a gas, the raw material is supplied as it is from a nozzle-shaped gas gun provided near the sample under reduced pressure. When the raw material is solid or liquid at room temperature, the reservoir holding the raw material is heated and vaporized, and then guided to the tip of a gas gun nozzle provided near the sample and supplied onto the sample. ing. At this time, the flow path in the gas gun is heated so that the gas that accelerates milling and the gas used for depositing the thin film on the way do not condense or solidify, and the flow rate of the supplied gas is controlled by the mass flow controller so that it is constant. Have been.
【０００５】[0005]
【発明が解決しようとする課題】上記のように、原料と
して固体または液体を用いる場合、室温の試料の近傍に
加熱されたガス銃が存在することになるため、その温度
勾配により試料は熱平衡状態に達するまで膨張を続けド
リフトが発生する。試料のドリフトのため加工の位置精
度が低下してしまうという問題があった。また、熱平衡
に達する温度が高くなる時には、室温から熱平衡状態に
達するまで試料の温度が上昇する。薄膜の堆積速度は温
度に依存するため、熱平衡状態に達するまで膜厚が経時
変化してしまって膜厚を精度良く制御できないという問
題があった。As described above, when a solid or liquid is used as a raw material, a heated gas gun is present near a sample at room temperature, and the sample is in a thermal equilibrium state due to the temperature gradient. And continue to inflate until drift is reached. There is a problem that the positional accuracy of processing is reduced due to the drift of the sample. When the temperature at which the thermal equilibrium is reached increases, the temperature of the sample increases from room temperature until the temperature reaches the thermal equilibrium state. Since the deposition rate of the thin film depends on the temperature, there is a problem that the film thickness changes with time until the thermal equilibrium state is reached, and the film thickness cannot be accurately controlled.
【０００６】また、従来の装置では複数のガスを使用す
るときには、ガス切替え時にそれぞれのガス銃のノズル
のアップ・ダウンさせて使用している。そのため摺動部
からの発塵により試料が汚染される可能性があるが、発
塵防止の具体的な対策はなされていなかった。上記に加
え、二種類以上のガスを使用する時には、作業チャンバ
中を高真空にしていてもどうしても雰囲気中には前に使
ったガス成分が長時間残留する。In the conventional apparatus, when a plurality of gases are used, the nozzles of the respective gas guns are used up and down when switching the gas. Therefore, the sample may be contaminated by dust from the sliding portion, but no specific measures have been taken to prevent dust. In addition to the above, when two or more types of gases are used, the previously used gas components remain in the atmosphere for a long time even if the working chamber is at a high vacuum.
【０００７】特に排気速度が低いものを用いた後では雰
囲気中に大量のコンタミネーションが残っており、被加
工物にコンタミネーションとして取り込まれてしまう。[0007] In particular, a large amount of contamination remains in the atmosphere after using a material having a low pumping speed, and is taken into the workpiece as contamination.
【０００８】[0008]
【課題を解決するための手段】試料とガス供給系の間に
ガス銃のノズル先端だけが通るようなシールド板を設け
る。更にこのシールド板を冷却できるようにする。熱源
であるリザーバやガス流路の大半がシールド板で遮ら
れ、熱が直接試料に伝わりにくくなるので、加工精度に
悪影響を及ぼす温度勾配による試料のドリフトの発生や
堆積する薄膜の膜厚の変動は低減される。また、試料と
ガス供給系の間の物理的な障害物を設けることになるの
で、ガス銃摺動部からの発塵も試料に直接落下すること
が妨げられる。更にシールド板の冷却すると、雰囲気中
のコンタミネーションがトラップされ試料を清浄な雰囲
気に保つことができる。Means for Solving the Problems A shield plate is provided between the sample and the gas supply system so that only the tip of the nozzle of the gas gun passes therethrough. Further, the shield plate can be cooled. Most of the heat source reservoir and gas flow path are shielded by the shield plate, making it difficult for heat to be directly transmitted to the sample. Is reduced. In addition, since a physical obstacle is provided between the sample and the gas supply system, dust from the sliding portion of the gas gun is also prevented from directly falling on the sample. Further, when the shield plate is cooled, contamination in the atmosphere is trapped, and the sample can be kept in a clean atmosphere.
【０００９】[0009]
【発明の実施の形態】以下に、イオンビーム加工装置と
してフォトマスクリペア装置を例にとり本発明の一実施
例について説明する。図1に本発明を取り入れたフォト
マスクリペア装置を示す。従来装置に試料とガス供給系
の間にガス銃のノズル先端だけが通るようなシールド板
が追加されて構成になっている。液体金属イオン源1よ
り引き出されたイオンビーム2を20kV程度まで加速した
のちコンデンサレンズ3aや対物レンズ3bにより集束し、
偏向電極4によりフォトマスクまたはレチクル5上を走査
する。フォトマスクまたはレチクル5は絶縁物であるガ
ラス基板の上にCr等の金属膜を蒸着したものなので、チ
ャージアップが生じないように、チャージニュートライ
ザー11の数100Vの電子ビーム12を照射して電荷中和を行
っている。0.2μm以下に集束されたイオンビーム2の照
射によって発生した二次イオン7は、トランスファー光
学系8の電界により集められ、集束された後に、セクタ
ー磁場9で質量分離されそれぞれ二次イオン検出器10に
導かれる。各検出器の信号強度をCRT上の1ピクセルの色
合いに対応させ、偏向電極4の走査と同期させて表示す
ることにより二次イオン像を形成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below using a photomask repair apparatus as an example of an ion beam processing apparatus. FIG. 1 shows a photomask repair apparatus incorporating the present invention. The conventional apparatus has a configuration in which a shield plate is added between the sample and the gas supply system so that only the nozzle tip of the gas gun passes therethrough. After accelerating the ion beam 2 extracted from the liquid metal ion source 1 to about 20 kV, it is focused by the condenser lens 3a and the objective lens 3b,
The deflection electrode 4 scans the photomask or reticle 5. Since the photomask or reticle 5 is formed by depositing a metal film such as Cr on a glass substrate which is an insulator, the charge neutralizer 11 irradiates an electron beam 12 of several hundred volts with a charge nutrizer 11 so that charge-up does not occur. Neutralizing. Secondary ions 7 generated by the irradiation of the ion beam 2 focused to 0.2 μm or less are collected by the electric field of the transfer optical system 8, and after being focused, are mass-separated by the sector magnetic field 9 and are each separated by the secondary ion detector 10. It is led to. The secondary ion image is formed by making the signal intensity of each detector correspond to the color of one pixel on the CRT and displaying it in synchronization with the scanning of the deflection electrode 4.
【００１０】欠陥の形状、種類、位置の確認時には、図
2に示すようにエッチング用のガス銃13aも遮光膜堆積用
のガス銃13bも電磁弁24が閉じられたまま熱シールド板1
5の上方に引き上げられた状態で使用する。エッチング
や遮光膜の堆積に使用されるガスは、常温で固体または
液体であるため、リザーバは温度コントローラ14で気化
するような温度に保たれ、リザーバ20とガス銃先端22を
結ぶ流路23も結露または凝固しないような温度に温度コ
ントローラ14で設定されている。このとき、熱源となる
ものは全て熱シールド板15上にあるため、熱源の熱が直
接フォトマスクまたはレチクル5の近傍の熱膨張率の大
きい部分6に伝わらないようになるので、温度勾配によ
るフォトマスクまたはレチクル5のドリフトの発生を大
幅に低減することができる。When checking the shape, type, and position of a defect,
As shown in FIG. 2, both the gas gun 13a for etching and the gas gun 13b for depositing a light-shielding film have the heat shield plate 1 with the electromagnetic valve 24 closed.
Use it in a state where it is pulled up above 5. Since the gas used for etching and deposition of the light-shielding film is a solid or liquid at room temperature, the reservoir is kept at a temperature at which it is vaporized by the temperature controller 14, and the flow path 23 connecting the reservoir 20 and the gas gun tip 22 is also formed. The temperature is set by the temperature controller 14 so as not to cause condensation or solidification. At this time, since all of the heat source is on the heat shield plate 15, the heat of the heat source is not transmitted directly to the portion 6 having a large thermal expansion coefficient near the photomask or the reticle 5, so that the photo- Occurrence of drift of the mask or reticle 5 can be greatly reduced.
【００１１】上記二次イオン像から修正すべき欠陥箇所
を特定し、黒欠陥修正時にはエッチングガス用のガス銃
13a先端を、白欠陥修正時には堆積用のガス銃13b先端
を、図3に示すように熱シールド板15の穴を通してフォ
トマスクまたはレチクル5まで約100μmぐらいの距離ま
で近づけ、電磁弁24を開けてガスを供給する。吹き付け
るガス流量はマスフローコントローラ16で所望の流量に
なるように制御されている。このとき、熱源の大部分は
熱シールド板15で遮蔽されており、熱発生源は小面積の
ガス銃先端22のみなので、フォトマスクまたはレチクル
5の近傍の熱膨張率の大きい部分6の温度勾配によるドリ
フトの発生を従来よりも低減することができる。黒欠陥
を修正するときにはイオンビーム2照射下でのガス支援
エッチング効果を利用して余分な遮光膜を取り除く。終
点検出は質量分離された二次イオンの強度をモニターす
ることで行う。A defect to be corrected is specified from the secondary ion image, and a gas gun for etching gas is used at the time of correcting a black defect.
3a, the tip of the deposition gas gun 13b at the time of correcting the white defect is brought close to the photomask or reticle 5 through the hole of the heat shield plate 15 to a distance of about 100 μm as shown in FIG. 3, and the electromagnetic valve 24 is opened. Supply gas. The gas flow rate to be blown is controlled by the mass flow controller 16 so as to be a desired flow rate. At this time, most of the heat source is shielded by the heat shield plate 15 and the heat source is only the tip 22 of the gas gun 22 having a small area.
Occurrence of drift due to a temperature gradient in the portion 6 having a large coefficient of thermal expansion near 5 can be reduced as compared with the related art. When correcting a black defect, an unnecessary light-shielding film is removed by utilizing a gas assisted etching effect under irradiation of the ion beam 2. The end point detection is performed by monitoring the intensity of the secondary ions separated by mass.
【００１２】白欠陥を修正するときにはカーボン等の遮
光性の物質を含んだ原料ガスをイオンビーム2のエネル
ギーにより分解・堆積し、透過光を遮るのに充分な厚さ
まで堆積して修正を行う。リザーバ20やガス流路23から
発生される熱は熱シールド板15に吸収されてしまうた
め、フォトマスクまたはレチクル5の温度上昇は小さ
く、白欠陥修正時に堆積する遮光膜の膜厚の変動は起こ
らない。When correcting a white defect, a source gas containing a light-shielding substance such as carbon is decomposed and deposited by the energy of the ion beam 2, and is deposited to a thickness sufficient to block transmitted light to perform the correction. Since the heat generated from the reservoir 20 and the gas passage 23 is absorbed by the heat shield plate 15, the temperature rise of the photomask or the reticle 5 is small, and the thickness of the light-shielding film deposited at the time of correcting the white defect varies. Absent.
【００１３】もちろん、上記の熱シールド板15は、フォ
トマスクまたはレチクル5の熱ドリフトを低減するばか
りでなく、ガス銃13a、13bのアップ・ダウンに伴って摺
動部から発生する発塵に対して物理的な障害物となるた
め、試料への発塵物の落下を防止する効果も持ち合わせ
ている。本発明の他の実施例として、図4に上記熱シー
ルド板15を液体窒素溜または冷凍機17に接続した例を示
す。熱シールド板15を冷却することにより、雰囲気中の
炭素含有物をトラップし、チャージニュートライザー11
の電子ビーム12により発生する炭素含有コンタミネーシ
ョンのフォトマスクまたはレチクル5上への付着を低減
することができる。Of course, the above-mentioned heat shield plate 15 not only reduces the thermal drift of the photomask or the reticle 5, but also prevents dust generated from the sliding portion due to the up and down movement of the gas guns 13a and 13b. In addition, since it is a physical obstacle, it also has the effect of preventing dust from falling onto the sample. As another embodiment of the present invention, FIG. 4 shows an example in which the heat shield plate 15 is connected to a liquid nitrogen reservoir or a refrigerator 17. By cooling the heat shield plate 15, the carbon content in the atmosphere is trapped, and the charge nutrizer 11 is trapped.
Of the carbon-containing contamination generated by the electron beam 12 on the photomask or the reticle 5 can be reduced.
【００１４】[0014]
【発明の効果】以上説明したように、この発明によれ
ば、ガス銃の加熱により発生する熱ドリフトや試料の温
度上昇を低減できるので、高い位置精度で均質な膜厚の
微細加工が可能となる。また、発塵防止効果と雰囲気中
のコンタミネーショントラップ効果により加工領域のコ
ンタミネーションの低減が図れる。もちろん、本発明は
フォトマスクリペア装置だけではなく、他のイオンビー
ム加工装置にも適用できる。As described above, according to the present invention, it is possible to reduce the thermal drift and the temperature rise of the sample caused by the heating of the gas gun. Become. In addition, contamination in the processing region can be reduced by the effect of preventing dust generation and the effect of trapping contamination in the atmosphere. Of course, the present invention can be applied not only to a photomask repair apparatus but also to other ion beam processing apparatuses.
【図１】図１は、本発明の一実施例の説明図である。FIG. 1 is an explanatory diagram of one embodiment of the present invention.
【図２】図２は、本発明の一実施例においてガス銃をア
ップした時の説明図である。FIG. 2 is an explanatory view when a gas gun is raised in one embodiment of the present invention.
【図３】図３は、本発明の一実施例においてガス銃をダ
ウンした時の説明図である。FIG. 3 is an explanatory view when the gas gun is down in one embodiment of the present invention.
【図４】図４は、本発明の他の実施例の説明図である。FIG. 4 is an explanatory diagram of another embodiment of the present invention.
１ イオン源 ２ イオンビーム ３ａ コンデンサレンズ ３ｂ 対物レンズ ４ 偏向電極 ５ フォトマスクまたはレチクル ６ フォトマスクまたはレチクル近傍の熱膨張率の大
きい部分 ７ 二次イオン ８ トランスファー光学系 ９ セクター磁石 １０ 二次イオン検出器 １１ チャージニュートライザー １２ 電子ビーム １３ａ エッチング用のガス銃 １３ｂ 遮光膜堆積用のガス銃 １４ 温度コントローラ １５ 熱シールド板 １６ マスフローコントローラ １７ 液体窒素溜または冷凍機 ２０ ガス銃のリザーバ ２１ ヒーター ２２ ガス銃先端のノズル ２３ ガスの流路 ２４ 電磁弁DESCRIPTION OF SYMBOLS 1 Ion source 2 Ion beam 3a Condenser lens 3b Objective lens 4 Deflection electrode 5 Photomask or reticle 6 Part with large thermal expansion coefficient near photomask or reticle 7 Secondary ion 8 Transfer optical system 9 Sector magnet 10 Secondary ion detector DESCRIPTION OF SYMBOLS 11 Charge nutrizer 12 Electron beam 13a Etching gas gun 13b Gas gun for light-shielding film deposition 14 Temperature controller 15 Heat shield plate 16 Mass flow controller 17 Liquid nitrogen reservoir or refrigerator 20 Gas gun reservoir 21 Heater 22 Gas gun tip Nozzle 23 Gas flow path 24 Solenoid valve
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平10−149788（ＪＰ，Ａ) 特開 平９−115907（ＪＰ，Ａ) 特開 平２−1849（ＪＰ，Ａ) 特開 平６−310078（ＪＰ，Ａ) 実開 昭60−42256（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01J 37/30 - 37/317 H01L 21/027 H01L 21/3065 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-10-149788 (JP, A) JP-A-9-115907 (JP, A) JP-A-2-1849 (JP, A) JP-A-6-14849 310078 (JP, A) Japanese Utility Model Showa 60-42256 (JP, U) (58) Fields investigated (Int. Cl. 6 , DB name) H01J 37/30-37/317 H01L 21/027 H01L 21/3065
Claims (3)
ンを集束するためのイオン光学系と、前記集束イオンビ
ームを試料上の所望の位置に照射するための偏向電極
と、試料の表面から放出される二次粒子を検出するため
の検出器と、二次粒子の平面強度分布に基づいて前記試
料表面の画像を表示する画像表示装置と、前記試料表面
の画像情報に基づいて加工領域を指定し、指定した領域
のみ選択的に集束イオンビームを繰り返し走査しながら
照射する機能と、前記指定部分を化学増幅作用で除去す
るときのガス導入系と、前記指定位置に薄膜を堆積する
ときの原料ガス導入系を有するイオンビーム加工装置に
おいて、前記試料と前記ガス導入系の間に熱ドリフト防
止のシールド板を設けたことを特徴とするイオンビーム
加工装置。1. An ion source for emitting ions, an ion optical system for focusing the ions, a deflection electrode for irradiating a desired position on the sample with the focused ion beam, and emission from the surface of the sample. A detector for detecting secondary particles to be detected, an image display device that displays an image of the sample surface based on the planar intensity distribution of the secondary particles, and a processing area specified based on image information of the sample surface A function for irradiating the focused ion beam while repeatedly scanning the focused ion beam only in a designated area, a gas introduction system for removing the designated portion by chemical amplification, and a raw material for depositing a thin film at the designated position An ion beam processing apparatus having a gas introduction system, wherein a shield plate for preventing thermal drift is provided between the sample and the gas introduction system.
きることを特徴とする請求項１記載のイオンビーム加工
装置。2. The ion beam processing apparatus according to claim 1, wherein the temperature of the shield plate can be controlled.
部材から発生するコンタミネーションの前記試料への混
入防止に用いることを特徴とする請求項１又は２記載の
イオンビーム加工装置。3. The ion beam processing apparatus according to claim 1, wherein the shield plate is used to prevent contamination generated from a member located above the sample from mixing into the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15771898A JP2939906B1 (en) | 1998-06-05 | 1998-06-05 | Ion beam processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15771898A JP2939906B1 (en) | 1998-06-05 | 1998-06-05 | Ion beam processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2939906B1 true JP2939906B1 (en) | 1999-08-25 |
| JPH11354062A JPH11354062A (en) | 1999-12-24 |
Family
ID=15655866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15771898A Expired - Lifetime JP2939906B1 (en) | 1998-06-05 | 1998-06-05 | Ion beam processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2939906B1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4336025B2 (en) * | 2000-06-09 | 2009-09-30 | 日本電子株式会社 | Charged particle beam equipment |
| JP2002341099A (en) * | 2001-05-17 | 2002-11-27 | Seiko Instruments Inc | Gas gun capable of lifting and driving one of a plurality of nozzles selectively |
| JP2003223855A (en) | 2001-11-22 | 2003-08-08 | Hitachi Ltd | Deflection yoke and cathode-ray tube device |
| US20050103272A1 (en) | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| US7141138B2 (en) | 2002-09-13 | 2006-11-28 | Applied Materials, Inc. | Gas delivery system for semiconductor processing |
-
1998
- 1998-06-05 JP JP15771898A patent/JP2939906B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11354062A (en) | 1999-12-24 |
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