JP2914355B2 - Organic EL device - Google Patents
Organic EL deviceInfo
- Publication number
- JP2914355B2 JP2914355B2 JP9192587A JP19258797A JP2914355B2 JP 2914355 B2 JP2914355 B2 JP 2914355B2 JP 9192587 A JP9192587 A JP 9192587A JP 19258797 A JP19258797 A JP 19258797A JP 2914355 B2 JP2914355 B2 JP 2914355B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent
- wiring material
- lower electrode
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 21
- 150000002894 organic compounds Chemical class 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 25
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機ＥＬ素子に関
し、特にドットマトリックスで文字や図形を表示するの
に用いられる有機ＥＬ素子に関するものである。The present invention relates to an organic EL device, and more particularly to an organic EL device used for displaying characters and figures in a dot matrix.
【０００２】[0002]
【従来の技術】従来のドットマトリックス表示の有機Ｅ
Ｌ素子として、例えば特開平２−６６８７３号公報に記
載されている技術を図６に示す。図６（ａ）はその平面
図、（ｂ）は概略斜視図であり、基板１１上に形成され
た一方向のストライプ（縞）状の下部電極１２と、その
上に形成された有機化合物薄膜１３と、その上に直交す
る方向に形成されたストライプ状の上部電極１４により
構成され、これら下部電極１２と上部電極１４の重なっ
た矩形の画素セルがマトリックス状に配列されている。2. Description of the Related Art A conventional dot matrix display of organic E
FIG. 6 shows a technique described in, for example, JP-A-2-66873 as the L element. FIG. 6A is a plan view and FIG. 6B is a schematic perspective view, in which a lower electrode 12 in one direction formed on a substrate 11 and a thin organic compound film formed thereon. 13 and a stripe-shaped upper electrode 14 formed thereon in a direction orthogonal thereto, and rectangular pixel cells in which the lower electrode 12 and the upper electrode 14 overlap are arranged in a matrix.
【０００３】ところで、このような有機ＥＬ素子では、
消費電力を低減し、かつ発光むら等の特性を向上させる
ためには、下部電極を構成している透明電極の低抵抗化
が必要となる。このような透明電極の低抵抗化を図る技
術として、エレクトロクロミック素子に適用された特開
昭６３−１５８５２８号公報に記載の技術がある。この
技術は、図７に示すように、基板上に基板２１に溝２２
を形成し、この溝２２の中に導電性材料の低抵抗導電層
２３を形成し、その上に透明電極２４を形成している。
そして、このような基板２１を所要の間隔で対向配置す
るとともに、それぞれの透明電極２４間に、電解質２
５、エレクトロクロミック物質層２６を形成し、シール
材２７で封止している。この技術では、透明電極２４と
並列に接続される低抵抗導電層２３によって透明電極２
４の低抵抗化が実現できる。In such an organic EL device,
In order to reduce power consumption and improve characteristics such as uneven light emission, it is necessary to lower the resistance of the transparent electrode constituting the lower electrode. As a technique for reducing the resistance of such a transparent electrode, there is a technique described in JP-A-63-158528 applied to an electrochromic element. In this technique, as shown in FIG.
Is formed, a low-resistance conductive layer 23 of a conductive material is formed in the groove 22, and a transparent electrode 24 is formed thereon.
Then, such substrates 21 are arranged facing each other at a required interval, and the electrolyte 2 is provided between the transparent electrodes 24.
5. An electrochromic material layer 26 is formed and sealed with a sealant 27. In this technique, the low-resistance conductive layer 23 connected in parallel with the transparent electrode 24 forms the transparent electrode 2.
4 can be realized.
【０００４】また、他の技術として、無機のＥＬ素子に
適用された特開平８−１８０９７４号公報に記載の技術
がある。図８（ａ）はその平面図、（ｂ）はＢ−Ｂ線断
面図であり、基板３１上に第１補助電極３２、第１透明
電極３３、第１絶縁膜３４、発光層３５、第２絶縁膜３
６、第２透明電極３７が形成された構造において、透明
電極３７に沿った領域に低抵抗補助電極３８を設けてい
る。この技術でも低抵抗補助電極３８によって透明電極
３７の低抵抗化が実現できる。As another technique, there is a technique described in Japanese Patent Application Laid-Open No. 8-180974 applied to an inorganic EL element. FIG. 8A is a plan view thereof, and FIG. 8B is a cross-sectional view taken along line BB of FIG. 2 insulating film 3
6. In the structure in which the second transparent electrode 37 is formed, a low-resistance auxiliary electrode 38 is provided in a region along the transparent electrode 37. Also in this technique, the resistance of the transparent electrode 37 can be reduced by the low-resistance auxiliary electrode 38.
【０００５】また、同様な技術として、特開平８−１８
０９７４号公報に記載された技術では、図９（ａ）に平
面図、（ｂ）にＣ−Ｃ線断面図を示すように、透明電極
３７に沿った領域に形成される低抵抗補助電極３８を、
非発光領域に延設し、かつ非発光領域において透明電極
３７と低抵抗補助電極３８とを電気接続したものであ
る。この技術でも、低抵抗補助電極３８によって透明電
極３７の低抵抗化が実現できる。A similar technique is disclosed in Japanese Patent Laid-Open No.
In the technique described in Japanese Patent Application Laid-Open No. 0974, a low-resistance auxiliary electrode 38 formed in a region along a transparent electrode 37 as shown in a plan view in FIG. To
The transparent electrode 37 and the low-resistance auxiliary electrode 38 extend in the non-light-emitting region, and are electrically connected in the non-light-emitting region. Also in this technique, the resistance of the transparent electrode 37 can be reduced by the low-resistance auxiliary electrode 38.
【０００６】[0006]
【発明が解決しようとする課題】このような従来の技術
では、図７や図８の構成では、透明電極を低抵抗化する
ために設けられた低抵抗導電層や低抵抗補助電極が金属
や銀ペースト等の不透明な材料で形成されているため、
これらが存在する領域では発光層で発光された光が出射
されなくなるため、発光領域が狭くなるという問題があ
る。また、図９の構成では低抵抗補助電極が透明電極の
外側に配置されているので、発光領域が狭められること
はないが、補助電極を隣接する画素セルの透明電極との
間に電気的に絶縁するための間隔が必要となるために、
補助電極がない場合に比べ画素セル間の非発光領域が増
大し、ＥＬ素子全体として見た場合に発光領域が低減さ
れることは避けられない。In such a conventional technique, in the structure shown in FIGS. 7 and 8, a low-resistance conductive layer and a low-resistance auxiliary electrode provided for reducing the resistance of a transparent electrode are made of metal or metal. Because it is made of opaque material such as silver paste,
Since light emitted from the light emitting layer is not emitted in a region where these are present, there is a problem that the light emitting region becomes narrow. Further, in the configuration of FIG. 9, since the low-resistance auxiliary electrode is disposed outside the transparent electrode, the light emitting region is not narrowed, but the auxiliary electrode is electrically connected between the transparent electrode of the adjacent pixel cell and the transparent electrode. Because a space for insulation is needed,
It is inevitable that the non-light emitting region between the pixel cells increases as compared with the case where there is no auxiliary electrode, and the light emitting region is reduced when viewed as a whole EL element.
【０００７】[0007]
【発明の目的】本発明の目的は、低抵抗化を図る一方で
発光領域を増大させることが可能な有機ＥＬ素子及びそ
の製造方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic EL device capable of increasing the light emitting region while reducing the resistance and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】本発明は、透明な絶縁性
基板と、前記基板の表面に形成される透明電極からなる
下部電極と、前記下部電極上に形成される有機化合物薄
膜と、前記有機化合物薄膜上に前記下部電極と対向して
形成される上部電極とを備える有機ＥＬ素子において、
前記下部電極が、前記基板の表面に形成された平行な複
数本の溝内に埋め込まれた透明な第１の配線材料と、こ
の第１の配線材料を含む平面領域において前記基板の表
面上に形成された透明な第２の配線材料とで構成され
る。あるいは、下部電極が、前記基板の表面に形成され
た溝内の両側面に形成された低抵抗導電体と、この低抵
抗導電体で挟まれる領域の前記溝内に埋め込まれた透明
な第１の配線材料と、前記溝を覆う平面領域において前
記基板の表面上に形成された透明な第２の配線材料とで
構成される。According to the present invention, there is provided a transparent insulating substrate, a lower electrode comprising a transparent electrode formed on a surface of the substrate, an organic compound thin film formed on the lower electrode, An organic EL device comprising: an upper electrode formed on the organic compound thin film so as to face the lower electrode;
The lower electrode is formed of a parallel composite formed on the surface of the substrate.
It is composed of a transparent first wiring material embedded in several grooves and a transparent second wiring material formed on the surface of the substrate in a plane region including the first wiring material. . Alternatively, the lower electrode includes a low-resistance conductor formed on both sides of a groove formed on the surface of the substrate, and a transparent first electrode embedded in the groove in a region sandwiched between the low-resistance conductors. And a transparent second wiring material formed on the surface of the substrate in a planar region covering the groove.
【０００９】また、本発明の製造方法は、下部電極を形
成する工程として、透明な絶縁性の基板に平行な複数本
の溝を形成する工程と、前記各溝内に透明な第１の配線
材料を埋め込む工程と、前記複数本の溝を覆う前記基板
の表面に透明な第２の配線材料を形成し、前記第１の配
線材料とで下部電極を形成する工程を備えている。ある
いは、透明な絶縁性の基板に溝を形成する工程と、前記
溝内の両側面に低抵抗導電体を形成する工程と、前記低
抵抗導電体で挟まれた前記溝内に透明な第１の配線材料
を埋め込む工程と、前記溝を覆う前記基板の表面に透明
な第２の配線材料を形成し、前記第１の配線材料とで下
部電極を形成する工程とを備えている。Further, in the manufacturing method of the present invention, the step of forming the lower electrode includes the step of forming a plurality of parallel electrodes on a transparent insulating substrate.
Forming a plurality of grooves, burying a transparent first wiring material in each of the grooves, forming a transparent second wiring material on a surface of the substrate covering the plurality of grooves, Forming a lower electrode with the first wiring material. Alternatively, a step of forming a groove in a transparent insulating substrate, a step of forming a low-resistance conductor on both side surfaces in the groove, and a step of forming a transparent first electrode in the groove sandwiched by the low-resistance conductor And a step of forming a transparent second wiring material on the surface of the substrate covering the groove, and forming a lower electrode with the first wiring material.
【００１０】[0010]
【発明の実施の形態】次に、本発明の実施形態を図面を
参照して説明する。図１は本発明の第１の実施形態を示
す、同図（ａ）は平面図、同図（ｂ）はＡ−Ａ線断面図
である。図１（ａ）に示すようにガラスや樹脂のような
透明な絶縁物からなる基板１の表面に、後述する下部電
極の形成位置に沿って一方向に延びる複数本の溝２が平
行に形成され、この溝２に透明な第１の配線材料３が埋
め込まれる。この第１の配線材料３としてはインジウム
錫酸化物（ＩＴＯ）、酸化錫（ＳｎＯ3 ）等の金属酸化
物が用いられる。そして、前記第１の配線材料３が形成
された領域、ここでは隣接する２本の第１の配線材料３
を含む領域の前記基板１の表面上に、前記溝２と同じ方
向に延びる複数本の薄膜の透明な第２の配線材料４が形
成される。この第２の配線材料４は前記第１の配線材料
３と同じでよい。これにより、前記第１の配線材料３と
第２の配線材料４とが一体化され、下部電極５が形成さ
れる。また、前記下部電極５上に有機化合物薄膜６が形
成される。この薄膜は単層または積層構造をし、ＥＬ発
光現象を示す材料膜であり、真空蒸着法やスピンコート
法により形成される。ここでは、下層の正孔輸送層６Ａ
と上層の発光層及び電子輸送層６Ｂの積層構造として形
成されている。さらに、この有機化合物薄膜６の上に、
前記下部電極５と直交する方向に、導電性金属からなる
複数本の上部電極７が形成される。この上部電極７の材
料としては仕事関数の小さい金属の合金、マグネシウム
・銀やマグネシウム・インジウムなどが用いられる。こ
こではマグネシウム層７Ａと銀層７Ｂの２層に構成して
いる。Next, embodiments of the present invention will be described with reference to the drawings. 1A and 1B show a first embodiment of the present invention. FIG. 1A is a plan view, and FIG. 1B is a sectional view taken along line AA. As shown in FIG. 1A, a plurality of grooves 2 extending in one direction are formed in parallel on a surface of a substrate 1 made of a transparent insulating material such as glass or resin along a formation position of a lower electrode described later. Then, a transparent first wiring material 3 is embedded in the groove 2. As the first wiring material 3, a metal oxide such as indium tin oxide (ITO) or tin oxide (SnO 3 ) is used. Then, the region where the first wiring material 3 is formed, here, two adjacent first wiring materials 3
Are formed on the surface of the substrate 1 in a region including a plurality of thin-film transparent second wiring materials 4 extending in the same direction as the grooves 2. This second wiring material 4 may be the same as the first wiring material 3. Thereby, the first wiring material 3 and the second wiring material 4 are integrated, and the lower electrode 5 is formed. Further, an organic compound thin film 6 is formed on the lower electrode 5. This thin film has a single-layer or multilayer structure and is a material film exhibiting an EL emission phenomenon, and is formed by a vacuum evaporation method or a spin coating method. Here, the lower hole transport layer 6A
And an upper light emitting layer and an electron transport layer 6B. Furthermore, on this organic compound thin film 6,
A plurality of upper electrodes 7 made of a conductive metal are formed in a direction orthogonal to the lower electrodes 5. As a material for the upper electrode 7, a metal alloy having a small work function, such as magnesium / silver or magnesium / indium, is used. Here, it is composed of two layers, a magnesium layer 7A and a silver layer 7B.
【００１１】図２及び図３は前記第１の実施形態の製造
方法を工程順に示す断面図である。先ず、図２（ａ）に
示すように、透明な絶縁性の基板１の表面に所定のレジ
スト１１を形成し、このレジスト１１をマスクにして前
記基板１の表面を浅くエッチングし、図２（ｂ），
（ｃ）のように、基板１の表面に平行な複数本の溝２を
形成する。次いで、図２（ｄ）に示すように、前記基板
１の全面に透明な第１の配線材料３を成膜する。材料は
ＩＴＯ、ＳｎＯ3 等でスパッタ法や蒸着法等により形成
する。そして、図２（ｅ）に示すように、前記基板１の
表面が露出するまで前記第１の配線材料３を研磨するこ
とにより、前記溝２内に透明な第１の配線材料３を埋め
込む。このときの研磨剤としてはアルミナ等を用いる。FIGS. 2 and 3 are sectional views showing the manufacturing method of the first embodiment in the order of steps. First, as shown in FIG. 2A, a predetermined resist 11 is formed on the surface of a transparent insulating substrate 1, and the surface of the substrate 1 is etched shallowly using the resist 11 as a mask. b),
As shown in (c), a plurality of grooves 2 parallel to the surface of the substrate 1 are formed. Next, as shown in FIG. 2D, a transparent first wiring material 3 is formed on the entire surface of the substrate 1. The material is formed of ITO, SnO 3 or the like by a sputtering method, an evaporation method, or the like. Then, as shown in FIG. 2E, the first wiring material 3 is polished until the surface of the substrate 1 is exposed, so that the transparent first wiring material 3 is embedded in the groove 2. Alumina or the like is used as the polishing agent at this time.
【００１２】次いで、図３（ａ）に示すように、前記基
板１上に透明な第２の配線材料４を成膜する。この第２
の配線材料４は前記第１の配線材料３と同じものが用い
られる。しかる上で、図３（ｂ），（ｃ）に示すよう
に、前記第２の配線材料４をレジスト１２を利用したエ
ッチングによりパターニングし、前記第２の配線材料３
上にわたって延長される下部電極５を形成する。その
後、図３（ｄ）に示すように、前記下部電極５を含む前
記基板１上に正孔輸送層６Ａと発光層及び電子輸送層６
Ｂを積層して有機化合物薄膜６を形成し、さらに図３
（ｅ）に示すように、前記下部電極５と直交方向に延び
る複数本の上部電極７を形成する。この上部電極７の形
成方法としても、全面に導電性金属膜、ここではマグネ
シウム層７Ａと銀層７Ｂを積層し、これをフォトリソグ
ラフィ技術によりパターニングする方法が採用できる。Next, as shown in FIG. 3A, a transparent second wiring material 4 is formed on the substrate 1. This second
The same wiring material 4 as the first wiring material 3 is used. Thereafter, as shown in FIGS. 3B and 3C, the second wiring material 4 is patterned by etching using a resist 12, and the second wiring material 3 is patterned.
A lower electrode 5 extending upward is formed. Thereafter, as shown in FIG. 3D, a hole transport layer 6A, a light emitting layer and an electron transport layer 6 are formed on the substrate 1 including the lower electrode 5.
B is laminated to form an organic compound thin film 6, and FIG.
As shown in (e), a plurality of upper electrodes 7 extending in a direction orthogonal to the lower electrode 5 are formed. As a method for forming the upper electrode 7, a method in which a conductive metal film, in this case, a magnesium layer 7A and a silver layer 7B are stacked on the entire surface and patterned by photolithography can be adopted.
【００１３】このように構成される第１の実施形態の有
機ＥＬでは、下部電極５が、基板１表面に形成された溝
２内の第１の配線材料３と、その上の基板１の表面に形
成された第２の配線材料４とで構成されるため、下部電
極５の全体の抵抗が低下される。その一方で、第１の配
線材料３は第２の配線材料４と同様な透明電極で形成さ
れているため、第１の配線材料３が非発光領域となるこ
とはなく、発光領域が低減されることもない。また、第
１の配線材料３は溝２内に埋め込まれているので、第２
の配線材料４は平坦に形成でき、フォトリソグラフィ技
術等における高精度のパターニングが可能となる。In the organic EL device according to the first embodiment, the lower electrode 5 is composed of the first wiring material 3 in the groove 2 formed on the surface of the substrate 1 and the surface of the substrate 1 thereon. , The overall resistance of the lower electrode 5 is reduced. On the other hand, since the first wiring material 3 is formed of the same transparent electrode as the second wiring material 4, the first wiring material 3 does not become a non-light emitting region, and the light emitting region is reduced. Never even. Further, since the first wiring material 3 is embedded in the groove 2, the second wiring material 3
The wiring material 4 can be formed flat, and high-precision patterning by a photolithography technique or the like can be performed.
【００１４】図４は第２の本発明の第２の実施形態の断
面図である。同図のように、透明な絶縁性の基板１の表
面に一方向に延びる複数本の幅広の溝２が平行に形成さ
れ、この溝２の両側の内面に側壁として低抵抗導電体か
らなる低抵抗配線材料８が形成される。この低抵抗配線
材料８はタングステン、タンタル、クロム等の金属や合
金が用いられる。また、前記溝２の内部の前記低抵抗配
線材料８で挟さまる領域に透明な第１の配線材料３が埋
め込まれる。そして、前記各溝２を含む前記基板１の表
面上に薄膜の透明な第２の配線材料４が形成される。こ
れら低抵抗配線材料８と透明な第１の配線材料３と透明
な第２の配線材料４とで下部電極５が形成される。さら
に、この下部電極５上に有機化合物薄膜６と上部電極７
が形成される。ここでも、有機化合物薄膜６は、下層の
正孔輸送層６Ａと上層の発光層及び電子輸送層６Ｂの積
層構造として形成されている。FIG. 4 is a sectional view of a second embodiment of the second invention. As shown in the figure, a plurality of wide grooves 2 extending in one direction are formed in parallel on the surface of a transparent insulating substrate 1, and a low-resistance conductor made of a low-resistance conductor as a side wall is formed on the inner surface on both sides of the grooves 2. The resistance wiring material 8 is formed. The low-resistance wiring material 8 is made of a metal or an alloy such as tungsten, tantalum, and chromium. Further, a transparent first wiring material 3 is buried in a region sandwiched between the low-resistance wiring materials 8 inside the groove 2. Then, a thin transparent second wiring material 4 is formed on the surface of the substrate 1 including the grooves 2. The lower electrode 5 is formed of the low-resistance wiring material 8, the transparent first wiring material 3, and the transparent second wiring material 4. Further, an organic compound thin film 6 and an upper electrode 7 are formed on the lower electrode 5.
Is formed. Also in this case, the organic compound thin film 6 is formed as a laminated structure of a lower hole transport layer 6A, an upper light emitting layer and an electron transport layer 6B.
【００１５】図５は前記第２の実施形態の製造方法を工
程順に示す断面図である。先ず、図５（ａ）に示すよう
に、図２（ａ）〜（ｃ）と同様の工程によって透明な絶
縁性の基板１の表面を浅くエッチングし、一方向に延び
る複数本の幅広の溝２を形成する。次いで、図５（ｂ）
に示すように、前記基板１の全面に低抵抗導電体からな
る低抵抗配線材料８を全面に形成し、その上で図５
（ｃ）に示すように、前記基板１の表面が露出するまで
前記低抵抗配線材料８を研磨することにより、前記溝２
内の両側面に前記低抵抗配線材料８からなる側壁を形成
する。FIG. 5 is a sectional view showing the manufacturing method of the second embodiment in the order of steps. First, as shown in FIG. 5A, the surface of the transparent insulating substrate 1 is etched shallowly by the same process as in FIGS. 2A to 2C, and a plurality of wide grooves extending in one direction. Form 2 Next, FIG.
As shown in FIG. 5, a low-resistance wiring material 8 made of a low-resistance conductor is formed on the entire surface of the substrate 1,
As shown in FIG. 3C, the low resistance wiring material 8 is polished until the surface of the substrate 1 is exposed, thereby forming the groove 2.
Side walls made of the low resistance wiring material 8 are formed on both side surfaces of the inside.
【００１６】次いで、図５（ｄ）に示すように、前記基
板１上に透明な第１の配線材料３を成膜する。しかる上
で、図５（ｅ）に示すように、前記第１の配線材料３を
前記基板１の表面が露出するまで研磨することにより、
前記溝２内に前記第１の配線材料３を埋め込む。さら
に、全面に透明な第２の配線材料４を形成した後、これ
をレジストパターンを利用したエッチングによりパター
ニングし、図５（ｆ）のように、前記第１の配線材料３
と、その上にわたって延長される第２の配線材料４から
なる下部電極５を形成する。その後、図５（ｇ）に示す
ように、前記下部電極５を含む前記基板１上に積層構造
の有機化合物薄膜６を形成し、さらに前記下部電極５と
直交方向に延びる複数本の上部電極７を形成する。Next, as shown in FIG. 5D, a transparent first wiring material 3 is formed on the substrate 1. Then, the first wiring material 3 is polished until the surface of the substrate 1 is exposed, as shown in FIG.
The first wiring material 3 is embedded in the groove 2. Further, after a transparent second wiring material 4 is formed on the entire surface, the second wiring material 4 is patterned by etching using a resist pattern, and as shown in FIG.
Then, a lower electrode 5 made of the second wiring material 4 extending over the lower electrode 5 is formed. Thereafter, as shown in FIG. 5G, an organic compound thin film 6 having a laminated structure is formed on the substrate 1 including the lower electrode 5, and a plurality of upper electrodes 7 extending in a direction orthogonal to the lower electrode 5. To form
【００１７】この第２の実施形態の有機ＥＬにおいて
は、下部電極５が、基板１表面に形成された溝２内の第
１の配線材料３及び低抵抗導電体８と、その上の基板１
の表面に形成された第２の配線材料４とで構成されるた
め、これら第１の配線材料３と低抵抗導電体８によって
下部電極５の全体の抵抗が低下される。その一方で、第
１の配線材料３は第２の配線材料４と同様な透明電極で
形成されているため、第１の配線材料３が非発光領域と
なることはなく、発光領域が低減されることもない。ま
た、第１の配線材料３は溝２内に埋め込まれているの
で、第２の配線材料４は平坦に形成でき、フォトリソグ
ラフィ技術等における高精度のパターニングが可能とな
る。また、この第２の実施形態では、溝２の両側面に形
成されている低抵抗導電体８によって低抵抗化がさらに
促進される。なお、この低抵抗導電体８が存在するため
に、若干の非発光領域は存在することになるが、その平
面面積は少ないため、発光領域に与える影響は少ない。In the organic EL device according to the second embodiment, the lower electrode 5 is composed of the first wiring material 3 and the low-resistance conductor 8 in the groove 2 formed on the surface of the substrate 1 and the substrate 1
, The entire resistance of the lower electrode 5 is reduced by the first wiring material 3 and the low-resistance conductor 8. On the other hand, since the first wiring material 3 is formed of the same transparent electrode as the second wiring material 4, the first wiring material 3 does not become a non-light emitting region, and the light emitting region is reduced. Never even. Further, since the first wiring material 3 is buried in the groove 2, the second wiring material 4 can be formed flat, and high-precision patterning by a photolithography technique or the like becomes possible. In the second embodiment, the low-resistance conductors 8 formed on both sides of the groove 2 further promote the reduction in resistance. Note that the presence of the low-resistance conductor 8 causes some non-light-emitting regions to exist. However, since the non-light-emitting region has a small planar area, the influence on the light-emitting regions is small.
【００１８】[0018]
【実施例】前記第１の実施形態の実施例を図２、図３を
再度参照して説明する。２０ｃｍ×２０ｃｍ，厚さ０．
７ｍｍのガラスからなる透明な絶縁性基板１の上でリソ
グラフィ技術により、図２（ａ）に示すようにレジスト
１１のパターン形成を行う。緩衝フッ酸水溶液により基
板１をエッチングし、図２（ｂ）に示すように、溝２を
幅１０μｍ、深さ１μｍ、間隔１５０μｍで形成する。
次に、図２（ｃ）に示すように、レジスト１１を除去
し、図２（ｄ）に示すように、スパッタ法によりＩＴＯ
からなる厚さ１．２μｍの透明な第１の配線材料３を成
膜する。そして、これをアルミナ研磨剤を用いて表面を
機械的湿式研磨し、図２（ｅ）に示すように、溝２の内
部にＩＴＯからなる透明な第１配線材料３を埋め込む。
研磨方法は機械的湿式研磨に限らず、ダイヤモンド粒子
を研磨剤とし塩化第二鉄をＩＴＯをエッチングに用いた
化学的機械的研磨等の方法も適用できる。EXAMPLE An example of the first embodiment will be described with reference to FIGS. 2 and 3 again. 20cm x 20cm, thickness 0.
As shown in FIG. 2A, a pattern of a resist 11 is formed on a transparent insulating substrate 1 made of 7 mm glass by a lithography technique. The substrate 1 is etched with a buffered hydrofluoric acid aqueous solution to form grooves 2 with a width of 10 μm, a depth of 1 μm, and an interval of 150 μm, as shown in FIG.
Next, as shown in FIG. 2C, the resist 11 is removed, and as shown in FIG.
A transparent first wiring material 3 having a thickness of 1.2 μm is formed. Then, the surface is mechanically wet-polished using an alumina abrasive, and a transparent first wiring material 3 made of ITO is embedded in the groove 2 as shown in FIG.
The polishing method is not limited to mechanical wet polishing, and a method such as chemical mechanical polishing using diamond particles as an abrasive and ferric chloride as ITO using etching can also be applied.
【００１９】次に、図３（ａ）に示すように、スパッタ
法によりＩＴＯからなる厚さ０．１５μｍの透明な第２
の配線材料４を成膜する。リソグラフィ技術により、図
３（ｂ）に示すようにレジスト１２のパターン形成を行
う。レジスト１２をマスクに透明な第２の配線材料４を
エッチングし、レジスト１２を除去し、図３（ｃ）に示
すようにＩＴＯからなる透明な第１の配線材料３とＩＴ
Ｏからなる透明な第２の配線材料４とにより下部電極５
を幅２００μｍで形成する。次に、図３（ｄ）に示すよ
うに、真空蒸着により積層構造の有機化合物薄膜６を堆
積する。ここでは、正孔輸送層６Ａとしてジアミン誘導
体ＴＰＤを５０ｎｍ、発光層及び電子輸送層６Ｂとして
トリス（８−キノリノール）アルミニウムＡｌｑ3 を５
０ｎｍ蒸着する。次に図３（ｅ）に示すように、マグネ
シウムとインジウムを共蒸着し、原子比１０：１の合金
からなる厚さ２００ｎｍの上部電極７を形成する。Next, as shown in FIG. 3A, a 0.15 μm thick transparent second electrode made of ITO is formed by sputtering.
Is formed. A pattern of the resist 12 is formed by lithography as shown in FIG. Using the resist 12 as a mask, the transparent second wiring material 4 is etched to remove the resist 12, and as shown in FIG. 3C, the transparent first wiring material 3 made of ITO and IT
The lower electrode 5 is formed by the transparent second wiring material 4 made of O.
Is formed with a width of 200 μm. Next, as shown in FIG. 3D, an organic compound thin film 6 having a laminated structure is deposited by vacuum evaporation. Here, the diamine derivative TPD is 50 nm as the hole transport layer 6A, and tris (8-quinolinol) aluminum Alq 3 is 5 as the light emitting layer and the electron transport layer 6B.
Deposit 0 nm. Next, as shown in FIG. 3E, magnesium and indium are co-evaporated to form an upper electrode 7 having a thickness of 200 nm and made of an alloy having an atomic ratio of 10: 1.
【００２０】この第１の実施例では下部電極の幅２００
μｍ全部を発光領域にできる。因みに、従来の透明でな
い導電性材料を溝に埋め込んだ場合は幅２００μｍの中
で溝の幅２０μｍの部分は非発光領域として表示不可能
な領域となる。In the first embodiment, the width of the lower electrode is 200
The entire μm can be used as a light emitting region. Incidentally, when a conventional non-transparent conductive material is embedded in the groove, a portion having a width of 20 μm in the groove having a width of 200 μm is a region that cannot be displayed as a non-light emitting region.
【００２１】次に、前記第２の実施形態の実施例を図
４，図５を参照して説明する。前記第１の実施例と同様
にリソグラフィ技術とエッチングにより図５（ａ）に示
すように、基板１に溝２を形成する。ただしエッチング
は異方性ドライエッチングにより溝の側壁を垂直に形成
する。次に、図５（ｂ）に示すように化学気相成長によ
りタングステンからなる厚さ５００ｎｍの低抵抗導電体
８Ａを成膜する。次、に異方性ドライエッチングにより
溝の側壁以外のタングステンからなる低抵抗導電体を除
去し溝の側壁の低抵抗導電体からなる低抵抗配線材料８
を図５（ｃ）に示すように形成する。Next, an example of the second embodiment will be described with reference to FIGS. As shown in FIG. 5A, a groove 2 is formed in a substrate 1 by lithography and etching in the same manner as in the first embodiment. However, the side wall of the groove is formed vertically by anisotropic dry etching. Next, as shown in FIG. 5B, a low-resistance conductor 8A made of tungsten and having a thickness of 500 nm is formed by chemical vapor deposition. Next, the low-resistance conductor made of tungsten other than the side wall of the groove is removed by anisotropic dry etching, and the low-resistance wiring material 8 made of the low-resistance conductor on the side wall of the groove is removed.
Is formed as shown in FIG.
【００２２】次いで、図５（ｄ）に示すように、スパッ
タ法によりＩＴＯからなる透明な第１の配線材料３を成
膜し、表面を研磨し図５（ｅ）に示すように、溝２の内
部にＩＴＯからなる透明な第１の配線材料３を埋め込
む。次に図５（ｆ）に示すように、ＩＴＯからなる透明
な第２の配線材料４を形成し下部電極５を形成する。５
０ｎｍのＴＰＤと５０ｎｍのＡｌｑ3 と２００ｎｍのマ
グネシウム・インジウム合金を蒸着し図５（ｇ）に示す
ように有機化合物６と上部電極７を形成する。Next, as shown in FIG. 5D, a transparent first wiring material 3 made of ITO is formed by a sputtering method, the surface is polished, and the grooves 2 are formed as shown in FIG. 5E. Is embedded with a transparent first wiring material 3 made of ITO. Next, as shown in FIG. 5F, a transparent second wiring material 4 made of ITO is formed, and a lower electrode 5 is formed. 5
TPD of 0 nm, Alq 3 of 50 nm, and a magnesium-indium alloy of 200 nm are deposited to form an organic compound 6 and an upper electrode 7 as shown in FIG.
【００２３】この第２の実施例では下部電極５の幅を２
００μｍとした時、溝２の側壁の低抵抗導電体８の厚さ
の合計２μｍが表示不可能な領域となる。しかしなが
ら、前記した従来技術の表示不可能な領域が２０μｍで
あることと比較すれば、非発光領域の低減は極めて僅か
である。In the second embodiment, the width of the lower electrode 5 is 2
When the thickness is set to 00 μm, a total of 2 μm of the thickness of the low resistance conductor 8 on the side wall of the groove 2 becomes a region where display is impossible. However, compared to the non-displayable area of 20 μm in the related art described above, the reduction of the non-light-emitting area is very slight.
【００２４】[0024]
【発明の効果】以上説明したように本発明は、基板に形
成した平行な複数本の溝内に埋め込まれた透明な第１の
配線材料と、この第１の配線材料を含む基板の表面上に
形成された透明な第２の配線材料とで下部電極が構成さ
れているのて、表示不可能な非発光領域を増大させるこ
となく下部電極の低抵抗化が実現できる。また、第１の
配線材料が基板の表面上に突出しないため、表面が平坦
で、基板との段差が小さい透明な下部電極を形成でき
る。また、溝内の両側面に低抵抗導電体が形成されてい
るので、非発光領域を大幅に増大することなく、下部電
極の低抵抗化をさらに進めることができる。さらに、第
１の配線材料を複数本の溝内に形成することにより、１
本の第１の配線材料において断線が生じた場合でも、他
の第１の配線材料によって導通が確保できる。 As described above, according to the present invention, a transparent first wiring material embedded in a plurality of parallel grooves formed in a substrate and a transparent first wiring material on the surface of the substrate containing the first wiring material are provided. Since the lower electrode is composed of the transparent second wiring material formed in the above, a lower resistance of the lower electrode can be realized without increasing a non-light-emitting area that cannot be displayed. In addition, since the first wiring material does not protrude above the surface of the substrate, a transparent lower electrode having a flat surface and a small step from the substrate can be formed. Further, since the low-resistance conductors are formed on both side surfaces in the groove, the resistance of the lower electrode can be further reduced without significantly increasing the non-light emitting region. In addition,
By forming one wiring material in a plurality of grooves, 1
Even if a break occurs in the first wiring material of the book,
Conductivity can be secured by the first wiring material.
【図１】本発明の第１の実施形態の有機ＥＬ素子の平面
図とＡＡ線断面図である。FIG. 1 is a plan view and an AA line cross-sectional view of an organic EL element according to a first embodiment of the present invention.
【図２】図１の有機ＥＬ素子の製造方法を工程順に示す
断面図のその１である。FIG. 2 is a first sectional view illustrating the method of manufacturing the organic EL element in FIG. 1 in the order of steps;
【図３】図１の有機ＥＬ素子の製造方法を工程順に示す
断面図のその２である。FIG. 3 is a second sectional view illustrating the method of manufacturing the organic EL element in FIG. 1 in the order of steps;
【図４】本発明の第２の実施形態の有機ＥＬ素子の断面
図である。FIG. 4 is a sectional view of an organic EL device according to a second embodiment of the present invention.
【図５】図４の有機ＥＬ素子の製造方法を工程順に示す
断面図である。FIG. 5 is a cross-sectional view showing a method for manufacturing the organic EL element of FIG. 4 in the order of steps.
【図６】本発明の対象となる有機ＥＬ素子の概念構成を
示す平面図と斜視図である。FIG. 6 is a plan view and a perspective view showing a conceptual configuration of an organic EL element to which the present invention is applied.
【図７】下部電極の低抵抗化を図った従来のＥＬ素子の
一例の断面図である。FIG. 7 is a cross-sectional view of an example of a conventional EL element for lowering the resistance of a lower electrode.
【図８】下部電極の低抵抗化を図った従来のＥＬ素子の
他の例の平面図とＢＢ線断面図である。8A and 8B are a plan view and a cross-sectional view taken along line BB of another example of a conventional EL element for lowering the resistance of a lower electrode.
【図９】下部電極の低抵抗化を図った従来のＥＬ素子の
更に他の例の平面図とＣＣ線断面図である。FIG. 9 is a plan view and a cross-sectional view taken along the line CC of still another example of the conventional EL element in which the resistance of the lower electrode is reduced.
１ 基板 ２ 溝 ３ 透明な第１の配線材料 ４ 透明な第２の配線材料 ５ 下部電極 ６ 有機化合物薄膜 ６Ａ 正孔輸送層 ６Ｂ 発光層電子輸送層 ７ 上部電極 Reference Signs List 1 substrate 2 groove 3 transparent first wiring material 4 transparent second wiring material 5 lower electrode 6 organic compound thin film 6A hole transport layer 6B light emitting layer electron transport layer 7 upper electrode
Claims (5)
形成される透明電極からなる下部電極と、前記下部電極
上に形成される有機化合物薄膜と、前記有機化合物薄膜
上に前記下部電極と対向して形成される上部電極とを備
える有機エレクトロルミネッセンス（ＥＬ）素子におい
て、前記下部電極は、前記基板の表面に形成された平行
な複数本の溝内に埋め込まれた透明な第１の配線材料
と、前記複数本の第１の配線材料を含む平面領域におい
て前記基板の表面上に形成された透明な第２の配線材料
とで構成されることを特徴とする有機ＥＬ素子。1. A transparent insulating substrate, a lower electrode comprising a transparent electrode formed on a surface of the substrate, an organic compound thin film formed on the lower electrode, and the lower electrode formed on the organic compound thin film. And an upper electrode formed opposite to the substrate, wherein the lower electrode is formed of a parallel electrode formed on a surface of the substrate.
A transparent first wiring material embedded in the plurality of grooves, and a transparent second wiring material formed on the surface of the substrate in a planar region including the plurality of first wiring materials. An organic EL device comprising:
形成される透明電極からなる下部電極と、前記下部電極
上に形成される有機化合物薄膜と、前記有機化合物薄膜
上に前記下部電極と対向して形成される上部電極とを備
える有機ＥＬ素子において、前記下部電極は、前記基板
の表面に形成された溝内の両側面に形成された低抵抗導
電体と、この低抵抗導電体で挟まれる領域の前記溝内に
埋め込まれた透明な第１の配線材料と、前記溝を覆う平
面領域において前記基板の表面上に形成された透明な第
２の配線材料とで構成されることを特徴とする有機ＥＬ
素子。2. A transparent insulating substrate, a lower electrode comprising a transparent electrode formed on the surface of the substrate, an organic compound thin film formed on the lower electrode, and the lower electrode formed on the organic compound thin film. And an upper electrode formed opposite to the lower electrode, wherein the lower electrode comprises a low-resistance conductor formed on both sides in a groove formed on the surface of the substrate; And a transparent second wiring material formed on the surface of the substrate in a plane region covering the groove in a region sandwiched between the first and second wirings. Organic EL characterized by:
element.
る複数本の平行な電極として構成され、前記上部電極は
前記下部電極に直交する方向に延長される複数本の平行
な電極として構成され、前記下部電極と上部電極とが交
差する部分がマトリクス状に配置される請求項１または
２に記載の有機ＥＬ素子。Wherein said second wiring material is configured as a plurality of parallel electrodes extending in one direction, the upper electrode as parallel electrodes a plurality of extending in a direction perpendicular to the lower electrode The organic EL device according to claim 1, wherein a portion where the lower electrode and the upper electrode intersect is arranged in a matrix.
を形成する工程と、前記各溝内に透明な第１の配線材料
を埋め込む工程と、前記複数本の溝を覆う前記基板の表
面に透明な第２の配線材料を形成し、前記第１の配線材
料とで下部電極を形成する工程と、前記基板の表面上に
有機化合物薄膜を形成する工程と、少なくとも前記下部
電極に対向する領域に上部電極を形成する工程を含むこ
とを特徴とする請求項１または３に記載した有機ＥＬ素
子の製造方法。4. A step of forming a plurality of parallel grooves in a transparent insulating substrate; a step of embedding a transparent first wiring material in each of the grooves; and a step of covering the plurality of grooves. Forming a transparent second wiring material on the surface of the substrate and forming a lower electrode with the first wiring material; forming an organic compound thin film on the surface of the substrate; 4. The method according to claim 1, further comprising a step of forming an upper electrode in a region facing the organic EL device.
と、前記各溝内の両側面に低抵抗導電体を形成する工程
と、前記低抵抗導電体で挟まれた前記溝内に透明な第１
の配線材料を埋め込む工程と、前記溝を覆う前記基板の
表面に透明な第２の配線材料を形成し、前記第１の配線
材料とで下部電極を形成する工程と、前記基板の表面上
に有機化合物薄膜を形成する工程と、少なくとも前記下
部電極に対向する領域に上部電極を形成する工程を含む
ことを特徴とする請求項２または３に記載した有機ＥＬ
素子の製造方法。5. A step of forming a groove in a transparent insulating substrate, a step of forming a low-resistance conductor on both side surfaces in each of the grooves, and a step of forming a groove in the groove sandwiched between the low-resistance conductors. Transparent first
Embedding a wiring material, forming a transparent second wiring material on the surface of the substrate covering the groove, and forming a lower electrode with the first wiring material; and forming a lower electrode on the surface of the substrate. 4. The organic EL device according to claim 2, further comprising a step of forming an organic compound thin film and a step of forming an upper electrode at least in a region facing the lower electrode.
Device manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9192587A JP2914355B2 (en) | 1997-07-17 | 1997-07-17 | Organic EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9192587A JP2914355B2 (en) | 1997-07-17 | 1997-07-17 | Organic EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1140368A JPH1140368A (en) | 1999-02-12 |
| JP2914355B2 true JP2914355B2 (en) | 1999-06-28 |
Family
ID=16293768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9192587A Expired - Fee Related JP2914355B2 (en) | 1997-07-17 | 1997-07-17 | Organic EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2914355B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4608105B2 (en) | 1999-04-02 | 2011-01-05 | 出光興産株式会社 | Organic electroluminescence display device and manufacturing method thereof |
| KR100611153B1 (en) | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | Plat panel display device |
| JP5577012B2 (en) * | 2007-05-03 | 2014-08-20 | 株式会社カネカ | Multilayer substrate and manufacturing method thereof |
| FR2924274B1 (en) * | 2007-11-22 | 2012-11-30 | Saint Gobain | SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND MANUFACTURING THE SAME |
| JP2010272466A (en) * | 2009-05-25 | 2010-12-02 | Fujifilm Corp | Transparent conductor and its manufacturing method |
| JP6018885B2 (en) * | 2012-11-16 | 2016-11-02 | 信越ポリマー株式会社 | CONDUCTIVE PATTERN FORMING SUBSTRATE, CAPACITANCE SENSOR SHEET, AND ITS MANUFACTURING METHOD |
| KR102458907B1 (en) | 2015-12-29 | 2022-10-25 | 엘지디스플레이 주식회사 | Organic light emitting display and method of fabricating the same |
-
1997
- 1997-07-17 JP JP9192587A patent/JP2914355B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1140368A (en) | 1999-02-12 |
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