JP2910023B2 - Gallium nitride based compound semiconductor light emitting device - Google Patents
Gallium nitride based compound semiconductor light emitting deviceInfo
- Publication number
- JP2910023B2 JP2910023B2 JP32776293A JP32776293A JP2910023B2 JP 2910023 B2 JP2910023 B2 JP 2910023B2 JP 32776293 A JP32776293 A JP 32776293A JP 32776293 A JP32776293 A JP 32776293A JP 2910023 B2 JP2910023 B2 JP 2910023B2
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- Prior art keywords
- gallium nitride
- compound semiconductor
- emitting device
- type
- based compound
- Prior art date
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- Semiconductor Lasers (AREA)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は発光ダイオード、レーザ
ーダイオード等に使用されるＩｎXＡｌYＧａ 1-X-YＮ
（０≦X≦１、０≦Y≦１）が積層されてなる窒化ガリウ
ム系化合物半導体発光素子に係り、特に１チップで多色
発光可能にできる発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a laser.
-In used for diodes, etc.XAlYGa 1-XYN
(0 ≦ X ≦ 1, 0 ≦ Y ≦ 1)
Multi-color compound semiconductor light-emitting devices, especially with one chip
The present invention relates to a light-emitting element which can emit light.
【０００２】[0002]
【従来の技術】ディスプレイ光源の一つとして発光ダイ
オード（ＬＥＤ）が知られている。一般にＬＥＤを用い
てディスプレイのような多色発光を行う場合、赤、緑、
青色各発光色のＬＥＤを複数個組み合わせて１画素を形
成するか、あるいはＬＥＤのステム上に赤、緑、青色の
各発光チップを複数個組み合わせて一つのＬＥＤ画素と
する試みが成されている。2. Description of the Related Art A light emitting diode (LED) is known as one of display light sources. In general, when performing multi-color light emission such as a display using an LED, red, green,
Attempts have been made to form one pixel by combining a plurality of LEDs of each blue emission color, or to combine a plurality of red, green, and blue light-emitting chips on an LED stem to form one LED pixel. .
【０００３】しかしながら、前者の場合では１画素に設
置したＬＥＤ間の距離が離れているため、近距離からデ
ィスプレイを観測する際には混色が不十分になる欠点が
ある。また、各ＬＥＤレンズの集光形状のため視認方向
によって、表示色が変化してしまい混色が不十分となる
欠点がある。混色をよくするため、例えばＬＥＤの樹脂
モールドに光拡散剤を添加するか、あるいはＬＥＤの前
面に光拡散板を設置すると、外部量子効率が低下してし
まう。一方、後者の場合は混色を行う際の外部量子効率
の点では前者よりも有利であるが、何分一画素を構成す
るＬＥＤが大きくなってしまい、精細な画像を得ること
が困難である。従って現在ＬＥＤを用いたディスプレイ
は、広告用、スタジアムのディスプレイ等のように数メ
ートル、あるいは数十メートル以上離れた位置から視認
するものしか実用化されていないのが現状である。つま
り、従来のＬＥＤディスプレイは、どうしても１画素を
構成するＬＥＤが大きくなり接近した位置で混色が十分
にできなくなるので、かなり離れた位置でしか見ること
ができなかった。However, in the former case, since the distance between the LEDs installed in one pixel is large, there is a disadvantage that the color mixture becomes insufficient when the display is observed from a short distance. Further, there is a disadvantage that the display color changes depending on the viewing direction due to the condensing shape of each LED lens, and the color mixture becomes insufficient. If, for example, a light diffusing agent is added to the resin mold of the LED or a light diffusing plate is provided on the front surface of the LED in order to improve the color mixture, the external quantum efficiency is reduced. On the other hand, the latter case is more advantageous than the former in terms of external quantum efficiency when performing color mixing, but the LEDs constituting one pixel are increased by a fraction, making it difficult to obtain a fine image. Therefore, at present, only displays using LEDs that can be viewed from a distance of several meters or tens of meters or more, such as displays for advertisements and stadiums, are currently in practical use. In other words, in the conventional LED display, the LEDs that constitute one pixel are inevitably large and color mixing cannot be sufficiently performed at a close position, so that the LED display can be viewed only at a considerably distant position.
【０００４】[0004]
【発明が解決しようとする課題】ＬＥＤを用いた多色発
光のディスプレイを高精細とし、例えば数十センチ離れ
た位置からでも均一に混色が行うことができれば、その
用途を広告だけでなく、他の分野にも大きく広げること
が可能となる。従って本発明の目的は、多色発光ＬＥＤ
ディスプレイの一画素を小さくすることができる発光素
子を提供することにより、近接した位置からでも均一に
混色された映像を得ることができるディスプレイを実現
することにある。If a multi-color light-emitting display using LEDs is made to have high definition and, for example, color mixing can be performed even from a position distant from several tens of centimeters, the use thereof is not limited to advertisements. It is possible to greatly expand to the field of. Accordingly, an object of the present invention is to provide a multicolor LED.
An object of the present invention is to provide a display capable of obtaining a uniformly mixed image even from a close position by providing a light-emitting element which can reduce one pixel of the display.
【０００５】[0005]
【課題を解決するための手段】我々はＬＥＤを構成する
半導体材料の中でも特にワイドギャップ半導体と知られ
ている窒化ガリウム系化合物半導体を用い、その半導体
一種類で多色発光を可能とする発光素子を見いだした。
即ち、本発明の発光素子は、基板上にＩｎXＡｌYＧａ
1-X-YＮ（０≦X≦１、０≦Y≦１）で表される窒化ガリ
ウム系化合物半導体が積層されてなる窒化ガリウム系化
合物半導体発光素子において、前記発光素子にはバンド
ギャップエネルギーが異なり、かつＩｎを含む窒化ガリ
ウム系化合物半導体層を有する活性層が少なくとも二層
以上形成されており、それぞれの活性層がｎ型及びｐ型
のクラッド層で挟まれたダブルへテロ構造を有すること
を特徴とする。さらに、前記ダブルへテロ構造は、それ
ぞれ半絶縁性の窒化ガリウム系化合物半導体を介して、
単一構造毎に分離されて形成されていることが望まし
い。 SUMMARY OF THE INVENTION We use a gallium nitride-based compound semiconductor known as a wide-gap semiconductor among semiconductor materials constituting an LED, and a light emitting element capable of emitting multicolor light with one kind of the semiconductor. Was found.
That is, the light-emitting device of the present invention has In X Al Y Ga
In a gallium nitride-based compound semiconductor light-emitting device in which gallium nitride-based compound semiconductors represented by 1-XYN (0 ≦ X ≦ 1, 0 ≦ Y ≦ 1) are laminated, the light-emitting device has a different band gap energy. And gallium nitride containing In
At least two or more active layers having a compound semiconductor layer are formed, and each of the active layers is an n-type or a p-type.
Characterized by having a double hetero structure sandwiched between the cladding layers . Further, the double heterostructure is
Through a semi-insulating gallium nitride compound semiconductor,
It is desirable that they are formed separately for each single structure.
No.
【０００６】[0006]
【作用】ＩｎXＡｌYＧａ1-X-YＮはそのバンドギャップ
エネルギーが最大のＡｌＮで６．２ｅＶ、最小のＩｎＮ
で１．８９ｅＶあり、このバンドギャップエネルギーの
バンド間発光のみを利用すると、理論的にはＡｌＮから
ＩｎＮまで発光波長をおよそ２００ｎｍ〜６５６ｎｍま
で変化させることができる。そしてこの半導体を活性層
として、１チップの中に複数形成し、それぞれの活性層
を同じく窒化ガリウム系化合物半導体よりなるクラッド
層で挟むことにより、活性層を独自に発光させることが
可能となる。但し、同一素子内において、活性層はバン
ドギャップエネルギーの大きい方、つまり発光波長の短
い活性層ほど、発光観測面側に形成されている方が好ま
しい。なぜなら、逆に短波長の活性層の上に長波長の活
性層があると、発光の際、短波長が長波長に吸収され
て、発光観測面側に取り出しにくいからである。The band gap energy of In X Al Y Ga 1 -XYN is 6.2 eV for AlN having the maximum band gap energy, and InN is the minimum for InN.
When only the inter-band emission of this band gap energy is used, the emission wavelength can be theoretically changed from AlN to InN from about 200 nm to 656 nm. Then, a plurality of such semiconductors are formed as an active layer in one chip, and each active layer is sandwiched between cladding layers made of a gallium nitride-based compound semiconductor, whereby the active layer can emit light independently. However, in the same device, it is preferable that the active layer having a larger band gap energy, that is, the active layer having a shorter emission wavelength be formed on the emission observation surface side. On the contrary, if there is an active layer having a long wavelength on the active layer having a short wavelength, the short wavelength is absorbed by the long wavelength at the time of light emission, and it is difficult to take out to the emission observation surface side.
【０００７】[0007]
【実施例】以下実施例で本発明の発光素子を詳説する。
図１は本願の一実施例の発光素子の構造を示す模式断面
図であり、１はサファイアよりなる基板、２はｎ型Ａｌ
0.23Ｉｎ0.66Ｇａ0.11Ｎよりなるクラッド層、３はｎ
型、あるいはｐ型のＩｎ0.89Ｇａ0.11Ｎよりなる活性
層、４はｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎよりなるクラ
ッド層、５はｎ型、あるいはｐ型のＩｎ0.63Ｇａ0.37Ｎ
よりなる活性層、６はｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎ
よりなるクラッド層、７はｎ型、あるいはｐ型のＡｌ0.
13Ｉｎ0.63Ｇａ0.24Ｎよりなる活性層、最上層である８
はｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎよりなるクラッド層
であり、発光観測面側をｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11
Ｎクラッド層８側としている。この発光素子は各クラッ
ド層に設けられた電極α、β、γ、δに通電することに
より、各活性層３、５、７が発光する構造としている。EXAMPLES The light emitting device of the present invention will be described in detail with reference to the following examples.
FIG. 1 is a schematic cross-sectional view showing the structure of a light emitting device according to one embodiment of the present application, wherein 1 is a substrate made of sapphire, and 2 is n-type Al.
A cladding layer made of 0.23In0.66Ga0.11N,
-Type or p-type active layer of In0.89Ga0.11N, 4 is a cladding layer of p-type Al0.23In0.66Ga0.11N, 5 is an n-type or p-type In0.63Ga0.37N
The active layer 6 is made of p-type Al0.23In0.66Ga0.11N.
The cladding layer 7 is made of n-type or p-type AlO.
Active layer made of 13In0.63Ga0.24N, top layer 8
Is a cladding layer made of p-type Al0.23In0.66Ga0.11N, and the emission observation surface side is p-type Al0.23In0.66Ga0.11N.
It is on the N clad layer 8 side. This light-emitting element has a structure in which each of the active layers 3, 5, and 7 emits light when a current is applied to the electrodes α, β, γ, and δ provided in each clad layer.
【０００８】これらの窒化ガリウム系化合物半導体はノ
ンドープでもｎ型となる性質があるが、好ましいｎ型と
するためにＳｉ、Ｇｅ、Ｔｅ、Ｓｅ等のｎ型ドーパント
をドープして結晶成長させることがさらに好ましい。ま
た、ｐ型とするためにはＺｎ、Ｍｇ、Ｃａ、Ｓｒ等のｐ
型ドーパントであるII族元素をドープしてｐ型特性を示
すように結晶成長させるか、あるいは特開平５−１８３
１８９号に開示したように、前記ｐ型ドーパントをドー
プした窒化ガリウム系化合物半導体を４００℃以上でア
ニーリングする必要がある。特に、活性層３、４、５に
は前記ｎ型ドーパントおよび／またはｐ型ドーパントを
ドープしてｎ型あるいはｐ型とすることにより発光強度
を向上させることができ、さらに発光波長を変えること
もできる。[0008] These gallium nitride-based compound semiconductors have the property of becoming n-type even if they are non-doped. In order to obtain a preferable n-type, it is necessary to grow a crystal by doping an n-type dopant such as Si, Ge, Te, or Se. More preferred. Further, in order to obtain a p-type, p such as Zn, Mg, Ca, Sr, etc.
Doping a group II element as a type dopant to grow the crystal so as to exhibit p-type characteristics;
As disclosed in Japanese Patent No. 189, it is necessary to anneal a gallium nitride-based compound semiconductor doped with the p-type dopant at 400 ° C. or higher. In particular, the active layers 3, 4, and 5 can be doped with the n-type dopant and / or the p-type dopant to be n-type or p-type, so that the emission intensity can be improved and the emission wavelength can be changed. it can.
【０００９】図１の発光素子において、バンドギャップ
エネルギーは活性層３で２．０ｅＶ、活性層５で２．３
ｅＶ、活性層７で２．７ｅＶであり、その他のクラッド
層は全て３．０ｅＶである。つまり活性層３はおよそ６
２０ｎｍ、活性層５は５３９ｎｍ、活性層７は４５９ｎ
ｍのバンド間発光を示す。In the light emitting device shown in FIG. 1, the bandgap energy of the active layer 3 is 2.0 eV, and the bandgap energy of the active layer 5 is 2.3 eV.
eV and 2.7 eV for the active layer 7, and 3.0 eV for all other cladding layers. That is, the active layer 3 is approximately 6
20 nm, active layer 5 is 539 nm, active layer 7 is 459 n
m shows the emission between bands.
【００１０】以上のような発光素子の電極α、β、γ、
δに表１に示す電圧を印可して発光させ、発光観測面側
から観測される色調を同じく表１に示す。表１におい
て、Ｒはレッド、Ｇはグリーン、Ｂはブルー、Ｓはシア
ン、Ｍはマゼンタ、Ｙはイエロー、Ｗはホワイトの各発
光色を示す。[0010] The electrodes α, β, γ,
The voltage shown in Table 1 was applied to δ to emit light, and the color tone observed from the emission observation surface side is also shown in Table 1. In Table 1, R represents red, G represents green, B represents blue, S represents cyan, M represents magenta, Y represents yellow, and W represents white.
【００１１】[0011]
【表１】 [Table 1]
【００１２】表１に示すように、各電極に所定の電圧を
印可することにより、クラッド層で挟まれた各活性層が
発光するので、一つのチップ内で均一に混色を行うこと
ができる。As shown in Table 1, when a predetermined voltage is applied to each electrode, each active layer sandwiched by the cladding layers emits light, so that color mixing can be performed uniformly within one chip.
【００１３】［実施例２］ 図２は本願の他の実施例に係る発光素子の構造を示す模
式断面図であり、図１と同一符号の部分は同一部材を指
している。この図は各活性層を有するダブルへテロ構造
の素子が、それぞれ半絶縁性のＧａＮ層９（以下、ｉ型
ＧａＮという。）により、構造毎に分離されていること
を示している。つまり、バンドギャップエネルギーの異
なる活性層をそれぞれクラッド層で挟み、クラッド層＋
活性層＋クラッド層よりなる単一の発光素子をｉ型Ｇａ
Ｎを介して基板上に３つ積層した構造としている。Embodiment 2 FIG. 2 is a schematic sectional view showing a structure of a light emitting device according to another embodiment of the present invention, and the same reference numerals as those in FIG. 1 denote the same members . This figure shows a double heterostructure with each active layer
Indicate that the elements are separated for each structure by a semi-insulating GaN layer 9 (hereinafter referred to as i-type GaN). That is, the active layers having different band gap energies are sandwiched between the cladding layers, and the cladding layer +
A single light-emitting element consisting of an active layer
It has a structure in which three layers are stacked on a substrate via N.
【００１４】ｉ型ＧａＮ層９は、ｐクラッド層４を結晶
成長させた後、連続して例えばＧａＮを成長させながら
ｐ型ドーパントをドープすることにより形成できる。そ
の層をｉ型にするか、ｐ型にするかは、成長条件によっ
て変更可能である。また発光観測面側に対し、この半絶
縁層のバンドギャップエネルギーを活性層よりも大きく
すると、発光が吸収されずに外部に取り出すことができ
る。（なお、ＧａＮのバンドギャップエネルギーは３．
４ｅＶ）The i-type GaN layer 9 can be formed by growing a crystal of the p-cladding layer 4 and then continuously doping a p-type dopant while growing, for example, GaN. Whether the layer is i-type or p-type can be changed depending on the growth conditions. When the band gap energy of the semi-insulating layer is larger than that of the active layer with respect to the emission observation surface side, the emission can be extracted outside without being absorbed. (The band gap energy of GaN is 3.
4 eV)
【００１５】図２の発光素子では（クラッド層２＋活性
層３＋クラッド層４）と、（クラッド層４＋活性層５＋
クラッド層６）と、（クラッド層６＋活性層７＋クラッ
ド層８）とがそれぞれ単独の発光素子として、ｉ型Ｇａ
Ｎ層９を介して基板上に積層されているので、それぞれ
の電極に電流を流すことにより、各発光素子を自由に発
光させることができる。In the light emitting device shown in FIG. 2, (cladding layer 2 + active layer 3 + cladding layer 4) and (cladding layer 4 + active layer 5+
The cladding layer 6) and the (cladding layer 6 + active layer 7 + cladding layer 8) are i-type Ga
Since the light-emitting elements are stacked on the substrate with the N layer 9 interposed therebetween, each light-emitting element can emit light freely by supplying a current to each electrode.
【００１６】[0016]
【発明の効果】以上説明したように、本願の発光素子は
１チップ、またはウェーハ単位で多色発光が可能である
ので、ＬＥＤディスプレイにした際にも、一画素の大き
さを小さくすることができ高精細な画面を得ることがで
きる。またウェーハの中で単位画素を多数作成して混色
できるので、接近した位置でディスプレイを観察しても
ムラのない画像を得ることができる。従って、本願の発
光素子は、将来民生用ＬＥＤディスプレイを提供する上
でも非常に利用価値が大きい。As described above, since the light emitting device of the present invention can emit multicolor light in units of one chip or wafer, it is possible to reduce the size of one pixel even in the case of LED display. And a high-definition screen can be obtained. Further , since a large number of unit pixels can be formed and mixed in a wafer, an image without unevenness can be obtained even when the display is observed at a close position. Therefore, the light-emitting element of the present application is very useful in providing a consumer LED display in the future.
【図１】 本願の一実施例の発光素子の構造を示す模式
断面図。FIG. 1 is a schematic cross-sectional view illustrating a structure of a light-emitting element according to an embodiment of the present invention.
【図２】 本願の他の実施例の発光素子の構造を示す模
式断面図。FIG. 2 is a schematic cross-sectional view illustrating a structure of a light emitting device according to another embodiment of the present application.
１・・・・・サファイア基板 ２・・・・・ｎ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎクラッド
層 ３・・・・・ｎ型、あるいはｐ型Ｉｎ0.89Ｇａ0.11Ｎ活
性層 ４・・・・・ｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎクラッド
層 ５・・・・・ｎ型、あるいはｐ型Ｉｎ0.63Ｇａ0.37Ｎ活
性層 ６・・・・・ｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎクラッド
層 ７・・・・・ｎ型、あるいはｐ型Ａｌ0.13Ｉｎ0.63Ｇａ
0.24Ｎ活性層 ８・・・・・ｐ型Ａｌ0.23Ｉｎ0.66Ｇａ0.11Ｎクラッド
層 ９・・・・・ｉ型ＧａＮ層1 ... Sapphire substrate 2 ... N-type Al0.23In0.66Ga0.11N cladding layer 3 ... N-type or p-type In0.89Ga0.11N active layer 4 ... p-type Al0.23In0.66Ga0.11N cladding layer 5 ... n-type or p-type In0.63Ga0.37N active layer 6 ... p-type Al0.23In0.66Ga0.11N cladding layer 7 ... ... n-type or p-type Al0.13In0.63Ga
0.24N active layer 8 ... p-type Al0.23In0.66Ga0.11N cladding layer 9 ... i-type GaN layer
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 33/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 33/00
Claims (4)
≦１、０≦Y≦１）で表される窒化ガリウム系化合物半
導体が積層されてなる窒化ガリウム系化合物半導体発光
素子において、前記発光素子にはバンドギャップエネル
ギーが異なり、かつＩｎを含む窒化ガリウム系化合物半
導体層を有する活性層が少なくとも二層以上形成されて
おり、それぞれの活性層がｎ型及びｐ型のクラッド層で
挟まれたダブルへテロ構造を有することを特徴とする窒
化ガリウム系化合物半導体発光素子。1. An In X Al Y Ga 1 -XYN (0 ≦ X
In ≦ 1,0 ≦ Y ≦ 1) a gallium nitride-based compound semiconductor light-emitting device of gallium nitride compound semiconductor are laminated represented by the different band gap energy to the light emitting element, and a gallium nitride-based containing In Compound half
At least two or more active layers having a conductor layer are formed, and each active layer is an n-type and p-type cladding layer.
A gallium nitride based compound semiconductor light emitting device having a double hetero structure sandwiched therebetween .
縁性の窒化ガリウム系化合物半導体を介して、単一構造
毎に分離されて形成されていることを特徴とする請求項
１に記載の窒化ガリウム系化合物半導体発光素子。2. The semiconductor device according to claim 1, wherein each of the double hetero structures has a single structure via a semi-insulating gallium nitride compound semiconductor.
The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor light-emitting device is formed separately from each other .
の大きい方が発光観測面側に形成されていることを特徴
とする請求項１または２に記載の窒化ガリウム系化合物
半導体発光素子。3. The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the active layer having a larger band gap energy is formed on a light emission observation surface side.
またはｐ型ドーパントがドープされていることを特徴と
する請求項１乃至３の内のいずれか１項に記載の窒化ガ
リウム系化合物半導体発光素子。4. An active layer comprising an n-type dopant and / or
4. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the device is doped with a p-type dopant . 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32776293A JP2910023B2 (en) | 1993-12-24 | 1993-12-24 | Gallium nitride based compound semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32776293A JP2910023B2 (en) | 1993-12-24 | 1993-12-24 | Gallium nitride based compound semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07183576A JPH07183576A (en) | 1995-07-21 |
| JP2910023B2 true JP2910023B2 (en) | 1999-06-23 |
Family
ID=18202708
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32776293A Expired - Fee Related JP2910023B2 (en) | 1993-12-24 | 1993-12-24 | Gallium nitride based compound semiconductor light emitting device |
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- 1993-12-24 JP JP32776293A patent/JP2910023B2/en not_active Expired - Fee Related
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|---|---|
| JPH07183576A (en) | 1995-07-21 |
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