JP2905038B2 - Chemical reaction apparatus and method of using the same - Google Patents
Chemical reaction apparatus and method of using the sameInfo
- Publication number
- JP2905038B2 JP2905038B2 JP14352593A JP14352593A JP2905038B2 JP 2905038 B2 JP2905038 B2 JP 2905038B2 JP 14352593 A JP14352593 A JP 14352593A JP 14352593 A JP14352593 A JP 14352593A JP 2905038 B2 JP2905038 B2 JP 2905038B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gate valve
- substrate
- buffer chamber
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Manufacturing Of Printed Circuit Boards (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体集積回路装置、例
えば液晶デバイス又はプリント基板等の一主面上に選択
的に形成される薄膜パターンの形成に用いられる化学反
応装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical reaction device used for forming a thin film pattern selectively formed on one principal surface of a semiconductor integrated circuit device, for example, a liquid crystal device or a printed circuit board.
【０００２】[0002]
【従来の技術】周知のように半導体集積回路装置例えば
液晶デバイス又は高密度プリント基板等には多数の薄膜
パターンの形成が必要である。薄膜パターンを形成する
ための手段としては、デバイスを構成するシリコン、ガ
ラス又は樹脂等よりなる基板の一主面上に所定の膜厚の
薄膜をスパッタ装置、常圧ＣＶＤ装置又はプラズマＣＶ
Ｄ装置等の薄膜堆積装置を用いて被着形成した後、感光
性樹脂と適当な露光機を用いた写真食刻によって所望の
感光性樹脂パターンを前記薄膜上に選択的に形成し、そ
の後、前記感光性樹脂パターンを食刻時のマスクとして
適当な食刻液又は食刻ガスにより不要な薄膜を選択的に
除去し、さらに、感光性樹脂パターンを適当な材料と装
置により除去する一連の微細加工プロセスが一般的であ
る。2. Description of the Related Art As is well known, a semiconductor integrated circuit device such as a liquid crystal device or a high-density printed circuit board needs to form a large number of thin film patterns. As a means for forming a thin film pattern, a thin film having a predetermined thickness is formed on one main surface of a substrate made of silicon, glass, resin, or the like constituting a device by a sputtering apparatus, a normal pressure CVD apparatus, or a plasma CV
After the deposition using a thin film deposition apparatus such as D apparatus, a desired photosensitive resin pattern is selectively formed on the thin film by photolithography using a photosensitive resin and a suitable exposure machine, and thereafter, Using the photosensitive resin pattern as a mask at the time of etching, an unnecessary thin film is selectively removed by an appropriate etching solution or etching gas, and further, a series of fine steps of removing the photosensitive resin pattern by an appropriate material and an appropriate device Processing processes are common.
【０００３】上記微細加工プロセス中の写真食刻時の現
像プロセスや食刻プロセスにおいては、反応液を基板上
にシャワー又はスプレー状に吹き付けるようにして１枚
ずつ連続的に処理する化学反応装置が量産工場では一般
的に用いられている。[0003] In the development process and the etching process at the time of photographic etching in the above-mentioned fine processing process, a chemical reaction apparatus for continuously processing the reaction solution one by one by spraying the reaction solution onto a substrate in a shower or spray form is known. It is commonly used in mass production factories.
【０００４】図２は、このような化学反応装置の概略構
成図であって、食刻装置としての構成では、反応（処
理）室２、水洗室４及び乾燥室５が最低限度の構成要素
である。さらに、反応室２の前段には薬液の拡散を防止
するために第１の緩衝室１が配置され、反応室２の後段
には処理液の水洗室４への持ち出し量を低下させるため
に第２の緩衝室３が配置されているのが一般的である。
この他にも薬液処理の処理時間が長くなる場合には反応
室２を長くしたり又は反応室２を二段構成にする等の設
計的手法が加味されることは知られている。[0004] FIG. 2 is a schematic configuration diagram of such a chemical reaction apparatus. In the configuration as an etching apparatus, a reaction (processing) chamber 2, a washing chamber 4 and a drying chamber 5 are the minimum components. is there. Further, a first buffer chamber 1 is disposed in front of the reaction chamber 2 in order to prevent the diffusion of the chemical solution, and a first buffer chamber 1 is provided in the rear of the reaction chamber 2 in order to reduce the amount of the processing liquid taken out to the washing chamber 4. In general, two buffer chambers 3 are arranged.
In addition, it is known that when the processing time of the chemical solution processing becomes longer, a design technique such as lengthening the reaction chamber 2 or forming the reaction chamber 2 in a two-stage configuration is added.
【０００５】以下、上記の化学反応装置の構成内容を簡
単に説明すると、薬液循環ポンプ６、薬液中のダスト又
はパーティクルを除去するためのフィルタ７及び流量調
整用バルブ８よりなる薬液循環用配管系９と、薬液を噴
射する薬液噴射ノズル１０、反応室２の底部に設けられ
た薬液回収配管１１並びに薬液循環タンク１２により閉
ループを構成して薬液１３を循環使用する構成が代表的
である。The chemical reaction apparatus will be briefly described below. A chemical liquid circulation pump 6, a filter 7 for removing dust or particles in the chemical liquid, and a chemical liquid circulation piping system comprising a flow rate adjusting valve 8 are provided. 9, a chemical solution injection nozzle 10 for injecting a chemical solution, a chemical solution recovery pipe 11 provided at the bottom of the reaction chamber 2, and a chemical solution circulation tank 12 constitute a closed loop to circulate and use the chemical solution 13.
【０００６】ストップバルブ１４を有する薬液供給用配
管系１５は薬液循環タンク１２に薬液１３を供給する配
管であり、図示は省略しているが、例えば別に設置され
た供給タンクから窒素ガス加圧等の圧送手段によって新
規な薬液が薬液循環タンク１２に供給される。同じくス
トップバルブ１６を有する薬液廃棄用配管系１７は使用
済の薬液１３を外部に廃棄するための配管であり、図示
は省略しているが、別途設置された廃液タンク等に移し
替えてから産業廃棄物として処理する等の手続きがなさ
れる。A chemical supply piping system 15 having a stop valve 14 is a pipe for supplying the chemical 13 to the chemical circulation tank 12 and is not shown in the drawing. A new chemical is supplied to the chemical circulation tank 12 by the pressure feeding means. Similarly, a chemical liquid disposal piping system 17 having a stop valve 16 is a piping for disposing of the used chemical liquid 13 to the outside. Although not shown, the chemical liquid 13 is transferred to a separately installed waste liquid tank, etc. Procedures such as disposal as waste are performed.
【０００７】水洗室４においては、基板に付着している
薬液を洗い流すため一般的には適度な純度の純水が必要
であるから、流量調整用バルブ１８を有する純水供給用
配管系１９が設けられ、該純水供給配管系１９の先端に
は純水を噴射する純水噴射ノズル２０が配置されてい
る。水洗室４の底部には基板を水洗した処理水を排水す
る排水管２１が設けられており、微量ではあるが排水中
に薬液が含まれるので、通常排水は公害対策のための処
理を施してから工場排水として廃棄される。In the rinsing chamber 4, pure water of appropriate purity is generally required to wash out the chemical solution adhering to the substrate. Therefore, a pure water supply piping system 19 having a flow control valve 18 is provided. A pure water injection nozzle 20 for injecting pure water is provided at the end of the pure water supply piping system 19. At the bottom of the rinsing chamber 4, there is provided a drain pipe 21 for draining the treated water after washing the substrate. Since a small amount of a chemical solution is contained in the drain water, the drain water is usually treated for pollution control. From the factory as wastewater.
【０００８】乾燥室５においては、水洗後の濡れた基板
を乾燥するために、圧力計２２及び流量調整用バルブ２
３を有しドライエア又は窒素ガスからなる乾燥ガスを供
給する乾燥ガス供給用配管系２４が設けられており、該
乾燥ガス供給用配管系２４の先端には上記乾燥ガスを基
板上にシート状に噴射する乾燥ガス噴射ノズル２５が設
けられている。乾燥室５の底部には、該乾燥室５内で乾
燥ガス噴射ノズル２５により飛散された後に凝集された
水を廃棄するための排水管２６が設けられている。In the drying chamber 5, a pressure gauge 22 and a flow control valve 2 are used to dry the wet substrate after washing with water.
3 is provided with a drying gas supply piping system 24 for supplying a drying gas composed of dry air or nitrogen gas, and at the tip of the drying gas supply piping system 24, the drying gas is formed into a sheet on a substrate. A dry gas jet nozzle 25 for jetting is provided. At the bottom of the drying chamber 5, there is provided a drain pipe 26 for discarding water that has been scattered after being scattered by the drying gas injection nozzle 25 in the drying chamber 5.
【０００９】このように乾燥ガスを基板に吹き付けて乾
燥する方式は別名エアナイフとも呼ばれる。エアナイフ
以外にもＩＰＡ等の速乾性の有機溶剤を用いた置換型乾
燥やスピン（回転）乾燥が知られているが、ここでは説
明は省略する。The method of spraying a drying gas onto a substrate for drying is also called an air knife. In addition to the air knife, displacement drying and spin (rotation) drying using a fast-drying organic solvent such as IPA are known, but the description is omitted here.
【００１０】尚、図２に示すように、純水噴射ノズル２
０及び乾燥ガス噴射ノズル２５は基板に対して上側から
のみならず下側からも噴射するのが効率的であり且つ一
般的である。[0010] As shown in FIG.
It is efficient and common for the 0 and dry gas spray nozzles 25 to spray the substrate not only from above but also from below.
【００１１】図３は、反応室２の詳細な断面概略図であ
る。FIG. 3 is a detailed sectional schematic view of the reaction chamber 2.
【００１２】図３の左右方向に並んで設けられた搬送ロ
ーラー２７の上を基板５０が反応室２の入口側の側壁に
設けられた開口スリット２８から反応室２内に入ってい
き、薬液噴射ノズル１０の下を一定の速度で通過し、反
応室２の出口側の側壁に設けられた開口スリット２９を
通過して第２の緩衝室３に入っていく搬送形態が一般的
である。A substrate 50 enters the reaction chamber 2 through an opening slit 28 provided on a side wall on the entrance side of the reaction chamber 2 on a transport roller 27 provided side by side in FIG. In general, the transfer form passes under the nozzle 10 at a constant speed, passes through the opening slit 29 provided in the side wall on the outlet side of the reaction chamber 2, and enters the second buffer chamber 3.
【００１３】反応室２の上部には反応室２内の薬液ミス
トを排気するための排気管３０が設けられており、該排
気管３０には、薬液ミストが大量に装置外に持ち出され
るのを防止するフィルタ又はトラップ３１が設けられて
いる。An upper part of the reaction chamber 2 is provided with an exhaust pipe 30 for exhausting the chemical mist in the reaction chamber 2. The exhaust pipe 30 is used to prevent a large amount of the chemical mist from being taken out of the apparatus. A preventing filter or trap 31 is provided.
【００１４】図１においては図示を省略したが、第１の
緩衝室１における開口スリット２８の近傍及び第２の緩
衝室３における開口スリット２９の近傍には、それぞれ
ゲートバルブ３２が設けられており、これらのゲートバ
ルブ３２は、薬液ミストを装置外に拡散させないため
と、反応室２に第１の緩衝室１及び第２の緩衝室３を経
由して化学反応装置近辺の大気（通常、クリーンエアで
あり、高価な空調コストが必要になる。）を大量に吸い
込んでしまう損失を避けるためのものであり、基板の通
過時のみ開くようになっている。Although not shown in FIG. 1, gate valves 32 are provided near the opening slit 28 in the first buffer chamber 1 and near the opening slit 29 in the second buffer chamber 3, respectively. In order to prevent the chemical mist from diffusing out of the apparatus, these gate valves 32 are provided to the reaction chamber 2 via the first buffer chamber 1 and the second buffer chamber 3 so that the atmosphere around the chemical reaction apparatus (normally, This is to avoid the loss of inhaling a large amount of air, which requires an expensive air conditioning cost), and is opened only when the substrate passes.
【００１５】反応室２の上部にはストップバルブ３３を
有するガス配管系３４が設けられており、該ガス配管系
３４は、反応室２内の雰囲気が吸い込まれた大気により
乾燥気味又は湿潤気味になり薬液の水分濃度が変化する
のを防止するため、水分を含んだ空気又は乾燥した空気
を供給する役目を担っている。この場合、吸い込まれた
大気と薬液とが反応して薬液の寿命が短くなるのを防止
するため、大気に代えて不活性ガス例えば窒素ガスを供
給することもある。A gas piping system 34 having a stop valve 33 is provided at the upper part of the reaction chamber 2. The gas piping system 34 becomes dry or moist due to the atmosphere sucked into the reaction chamber 2. In order to prevent the moisture concentration of the chemical solution from changing, it plays a role of supplying air containing moisture or dry air. In this case, an inert gas, such as nitrogen gas, may be supplied instead of the air in order to prevent the drawn-in atmosphere from reacting with the chemical solution to shorten the life of the chemical solution.
【００１６】[0016]
【発明が解決しようとする課題】ところが、上記の化学
反応装置においては、基板が反応室に入って行く時及び
出て行く時にゲートバルブ３２が開くため、第１の緩衝
室１及び第２の緩衝室３から大気又は水分を大量に含ん
だ空気が反応室２に流入することは避けられない。特に
連続処理の場合には基板が次から次へと搬送されて来る
ためゲートバルブ３２は閉じている状態よりも開いてい
る状態の方が長くなり、大気の混入を防止する機能が著
しく損なわれてしまうという問題がある。However, in the above-described chemical reaction apparatus, the gate buffer 32 is opened when the substrate enters and leaves the reaction chamber, so that the first buffer chamber 1 and the second buffer chamber 1 are opened. It is inevitable that the atmosphere or air containing a large amount of moisture flows into the reaction chamber 2 from the buffer chamber 3. In particular, in the case of continuous processing, the substrate is transported one after another, so that the gate valve 32 is longer in the open state than in the closed state, and the function of preventing air from being mixed is significantly impaired. Problem.
【００１７】本発明は、上述した問題点に鑑みなされた
ものであり、連続処理で基板が次から次へと反応室に搬
送されてきても、大気が反応室に流入しないような化学
反応装置及びその使用方法を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and has been made in consideration of the above-described problems. And a method of using the same.
【００１８】[0018]
【課題を解決するための手段】上記の目的を達成するた
め、本発明は、反応室の前後に設けられた２つの緩衝室
のそれぞれの基板搬入口側及び基板搬出口側にゲートバ
ルブを設け、いずれの緩衝室においても両方のゲートバ
ルブが同時に開いている状態をなくすことにより、反応
室が大気と連通するのを阻止するものである。According to the present invention, a gate valve is provided on each of a substrate loading port and a substrate loading port of two buffer chambers provided before and after a reaction chamber. By eliminating the state in which both gate valves are simultaneously open in any buffer chamber, the reaction chamber is prevented from communicating with the atmosphere.
【００１９】具体的に請求項１の発明が講じた解決手段
は、化学反応装置を、搬入された基板に反応液を供給し
て化学処理を行なう反応室と、化学処理が施された基板
に純水を供給して洗浄を行なう水洗室と、上記反応室の
基板搬入側に隣接して設けられ第１の連通孔を介して上
記反応室と連通しており上記反応室内の反応液の拡散を
防止する第１の緩衝室と、上記反応室と上記水洗室との
間に設けられ第２の連通孔を介して上記反応室と連通し
且つ第３の連通孔を介して上記水洗室と連通しており上
記反応室内の処理液が上記水洗室に持ち出されるのを防
止する第２の緩衝室と、上記第１の緩衝室の基板搬入口
を開閉する第１のゲートバルブと、上記第１の連通孔を
開閉する第２のゲートバルブと、上記第２の連通孔を開
閉する第３のゲートバルブと、上記第３の連通孔を開閉
する第４のゲートバルブと、上記第１の緩衝室に不活性
ガスを供給する第１の不活性ガス供給手段と、上記第１
の緩衝室内の気体を排出する第１の排気手段と、上記第
２の緩衝室に不活性ガスを供給する第２の不活性ガス供
給手段と、上記第２の緩衝室内の気体を排出する第２の
排気手段とを備えている構成とするものである。 Specifically, the solution of the first aspect of the present invention is to provide a chemical reaction apparatus comprising: a reaction chamber for supplying a reaction solution to a loaded substrate to perform a chemical treatment; A washing chamber for supplying pure water for washing, and a diffusion chamber for the reaction liquid in the reaction chamber, which is provided adjacent to the substrate loading side of the reaction chamber and communicates with the reaction chamber through a first communication hole. A first buffer chamber for preventing the above, and a second communication hole which is provided between the reaction chamber and the washing chamber, communicates with the reaction chamber via a second communication hole, and communicates with the washing chamber via a third communication hole. A second buffer chamber that is in communication with the processing chamber and prevents the processing liquid in the reaction chamber from being taken out to the washing chamber; a first gate valve that opens and closes a substrate loading port of the first buffer chamber; A second gate valve for opening and closing the first communication hole, and a third gate valve for opening and closing the second communication hole; Valve and a fourth gate valve for opening and closing the third communication hole, said first buffer chamber to inert
First inert gas supply means for supplying gas;
First exhaust means for exhausting gas from the buffer chamber of
A second inert gas supply for supplying an inert gas to the second buffer chamber.
Supply means, and a second means for discharging gas in the second buffer chamber.
And exhaust means.
【００２０】[0020]
【００２１】請求項２の発明は、搬入された基板に反応
液を供給して化学処理を行なう反応室と、化学処理が施
された基板に純水を供給して洗浄を行なう水洗室と、上
記反応室の基板搬入方向手前側に隣接して設けられ第１
の連通孔を介して上記反応室と連通しており上記反応室
内の反応液の拡散を防止する第１の緩衝室と、上記反応
室と上記水洗室との間に設けられ第２の連通孔を介して
上記反応室と連通し且つ第３の連通孔を介して上記水洗
室と連通しており上記反応室内の処理液が上記水洗室に
持ち出されるのを防止する第２の緩衝室と、上記第１の
緩衝室の基板搬入口を開閉する第１のゲートバルブと、
上記第１の連通孔を開閉する第２のゲートバルブと、上
記第２の連通孔を開閉する第３のゲートバルブと、上記
第３の連通孔を開閉する第４のゲートバルブと、上記第
１の緩衝室に不活性ガスを供給する第１の不活性ガス供
給手段と、上記第１の緩衝室内の気体を排出する第１の
排気手段と、上記第２の緩衝室に不活性ガスを供給する
第２の不活性ガス供給手段と、上記第２の緩衝室内の気
体を排出する第２の排気手段とを備えた化学反応装置の
使用方法であって、上記第１のゲートバルブを開いて基
板を上記第１の緩衝室に搬入した後、上記第１のゲート
バルブを閉じ、その後、上記第１のゲートバルブ及び第
２のゲートバルブが閉じている上記第１の緩衝室に上記
第１の不活性ガス供給手段から不活性ガスを供給すると
共に上記第１の排気手段により上記第１の緩衝室の気体
を排出し、次に、上記第２のゲートバルブを開けて基板
を上記第１の緩衝室から上記反応室に移送した後、上記
第２のゲートバルブを閉じ、次に、上記反応室において
基板に化学処理を施し、次に、上記第３のゲートバルブ
を開けて基板を上記第２の緩衝室に搬入した後、上記第
３のゲートバルブを閉じ、その後、上記第３のゲートバ
ルブ及び第４のゲートバルブが閉じている上記第２の緩
衝室に上記第２の不活性ガス供給手段から不活性ガスを
供給すると共に上記第２の排気手段により上記第２の緩
衝室の気体を排出し、次に、上記第４のゲートバルブを
開けて基板を上記水洗室に移送する構成である。According to a second aspect of the present invention, there is provided a reaction chamber for supplying a reaction solution to a carried-in substrate to perform a chemical treatment, and a washing chamber for supplying pure water to the chemically-treated substrate to perform cleaning. The first chamber is provided adjacent to the reaction chamber on the front side in the substrate loading direction.
A first buffer chamber communicating with the reaction chamber through the communication hole and preventing diffusion of the reaction solution in the reaction chamber; and a second communication hole provided between the reaction chamber and the washing chamber. A second buffer chamber that communicates with the reaction chamber through a third communication hole and communicates with the washing chamber through a third communication hole, and that prevents a processing solution in the reaction chamber from being taken out to the washing chamber; A first gate valve for opening and closing the substrate loading port of the first buffer chamber;
A second gate valve for opening and closing the first communication hole, and a third gate valve for opening and closing the second communication hole, a fourth gate valve for opening and closing the third communication hole, the first
A first inert gas supply for supplying an inert gas to the first buffer chamber;
Supply means, and a first means for discharging gas in the first buffer chamber.
Supplying an inert gas to the exhaust means and the second buffer chamber
Second inert gas supply means, and gas in the second buffer chamber.
A method of using a chemical reaction apparatus comprising: a second exhaust means for discharging a body, wherein the first gate valve is opened to load a substrate into the first buffer chamber; The valve is closed, and then the first gate valve and the
In the first buffer chamber in which the second gate valve is closed,
When the inert gas is supplied from the first inert gas supply means,
In both cases, the gas in the first buffer chamber is supplied by the first exhaust means.
Was drained and then, after the substrate by opening the said second gate valve is transferred to the reaction chamber from said first buffer chamber, closing the second gate valve, then, the substrate in the reaction chamber After the third gate valve is opened and the substrate is carried into the second buffer chamber, the third gate valve is closed, and then the third gate valve is opened.
The second valve with the valve and the fourth gate valve closed.
Inert gas from the second inert gas supply means into the impingement chamber
Supply and the second exhaust means by the second exhaust means.
The gas is discharged from the impingement chamber, and then the fourth gate valve is opened to transfer the substrate to the washing chamber.
【００２２】[0022]
【作用】請求項１の構成により、第１の緩衝室の基板搬
入口を開閉する第１のゲートバルブと、第１の連通孔を
開閉する第２のゲートバルブと、第２の連通孔を開閉す
る第３のゲートバルブと、第３の連通孔を開閉する第４
のゲートバルブとを備えているため、第１のゲートバル
ブ及び第２のゲートバルブのうちの一のゲートバルブを
常に閉じた状態にすることにより、反応室が第１の緩衝
室を介して大気と連通することはない。また、第３のゲ
ートバルブ及び第４のゲートバルブのうちの一のゲート
バルブを常に閉じた状態にすることにより、反応室が第
２の緩衝室及び水洗室を介して大気と連通することはな
い。According to the structure of the first aspect, the first gate valve for opening and closing the substrate loading port of the first buffer chamber, the second gate valve for opening and closing the first communication hole, and the second communication hole are provided. A third gate valve that opens and closes, and a fourth gate valve that opens and closes the third communication hole
The reaction chamber is connected to the atmosphere through the first buffer chamber by always closing one of the first gate valve and the second gate valve. Never communicate with Also, by keeping one of the third gate valve and the fourth gate valve closed at all times, the reaction chamber can be prevented from communicating with the atmosphere via the second buffer chamber and the washing chamber. Absent.
【００２３】また、第１の不活性ガス供給手段により不
活性ガスを第１の緩衝室に供給すると共に第１の排気手
段により第１の緩衝室内の気体を排出すると第１の緩衝
室内をパージすることができる。また、第２の不活性ガ
ス供給手段により不活性ガスを第２の緩衝室に供給する
と共に第２の排気手段により第２の緩衝室内の気体を排
出すると第２の緩衝室内をパージすることができる。Further , when the inert gas is supplied to the first buffer chamber by the first inert gas supply means and the gas in the first buffer chamber is exhausted by the first exhaust means, the first buffer chamber is purged. can do. Further, when the inert gas is supplied to the second buffer chamber by the second inert gas supply means and the gas in the second buffer chamber is exhausted by the second exhaust means, the second buffer chamber may be purged. it can.
【００２４】請求項２の構成により、第１のゲートバル
ブを開いて基板を第１の緩衝室に搬入した後、第１のゲ
ートバルブを閉じ、次に、第２のゲートバルブを開けて
基板を第１の緩衝室から反応室に移送するため、第１の
ゲートバルブ及び第２のゲートバルブが同時に開いてい
ることがない。また、第１のゲートバルブ及び第２のゲ
ートバルブが閉じている第１の緩衝室に第１の不活性ガ
ス供給手段により不活性ガスを供給すると共に、第１の
排気手段により第１の緩衝室の気体を排出するため、第
１の緩衝室の大気はパージされる。また、第３のゲート
バルブを開けて基板を第２の緩衝室に搬入した後、第３
のゲートバルブを閉じ、次に、第４のゲートバルブを開
けて基板を水洗室に移送するため、第３のゲートバルブ
及び第４のゲートバルブが同時に開いていることがな
い。第３のゲートバルブ及び第４のゲートバルブが閉じ
ている第２の緩衝室に第２の不活性ガス供給手段から不
活性ガスを供給すると共に、第２の排気手段により第２
の緩衝室の気体を排出するため、第２の緩衝室の大気は
パージされる。 According to the second aspect of the present invention, after the first gate valve is opened and the substrate is carried into the first buffer chamber, the first gate valve is closed, and then the second gate valve is opened to open the substrate. Is transferred from the first buffer chamber to the reaction chamber, so that the first gate valve and the second gate valve are not simultaneously opened . In addition, the first gate valve and the second gate
A first inert gas is provided in the first buffer chamber in which the heat valve is closed.
The inert gas is supplied by the gas supply means,
Since the gas in the first buffer chamber is exhausted by the exhaust means,
The atmosphere in the first buffer chamber is purged. After the third gate valve is opened and the substrate is carried into the second buffer chamber, the third gate valve is opened.
Closing the gate valve, then for transferring the substrate by opening the fourth gate valve in the washing chamber, it third gate valve and the fourth gate valve is opened at the same time Gana
No. Third and fourth gate valves closed
From the second inert gas supply means to the second buffer chamber.
While supplying the active gas, the second exhaust means
To exhaust the gas in the second buffer chamber, the atmosphere in the second buffer chamber is
Purged.
【００２５】[0025]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。An embodiment of the present invention will be described below with reference to the drawings.
【００２６】図１は上記一実施例に係る化学反応装置の
概略構成を示している。本実施例に係る化学反応装置の
説明において、図２に示す従来の化学反応装置と共通す
る部材及び手段については、同一の符号を付すことによ
り詳細な説明は省略する。FIG. 1 shows a schematic configuration of a chemical reaction apparatus according to the above-described embodiment. In the description of the chemical reaction apparatus according to the present embodiment, members and means common to those of the conventional chemical reaction apparatus shown in FIG.
【００２７】まず、本実施例の特徴として、第１の緩衝
室１の基板搬入口５１を開閉する第１のゲートバルブ４
０、第１の緩衝室１と反応室２とを連通させる第１の連
通孔５２を開閉する第２のゲートバルブ４１、反応室２
と第２の緩衝室３とを連通させる第２の連通孔５３を開
閉する第３のゲートバルブ４２、第２の緩衝室３と水洗
室４とを連通させる第３の連通孔５４を開閉する第４の
ゲートバルブ４３がそれぞれ設けられている。First, as a feature of the present embodiment, a first gate valve 4 for opening and closing the substrate loading port 51 of the first buffer chamber 1 is provided.
0, a second gate valve 41 that opens and closes a first communication hole 52 that connects the first buffer chamber 1 and the reaction chamber 2, and the reaction chamber 2
A third gate valve 42 that opens and closes a second communication hole 53 that communicates with the second buffer chamber 3, and a third communication hole 54 that opens and closes the second buffer chamber 3 and the washing chamber 4. Fourth gate valves 43 are provided, respectively.
【００２８】また、上述したガス配管系３４から分岐し
て延びストップバルブ４４を有する第１の不活性ガス供
給手段としての第１の分岐ガス管系４５が第１の緩衝室
１に接続されていると共に、ガス配管３４から分岐して
延びストップバルブ４６を有する第２の不活性ガス供給
手段としての第２の分岐ガス管系４７が第２の緩衝室３
に接続されている。また、図示は省略したが、第１の緩
衝室１内の気体を外部に排出する第１の排気手段として
のガス排出管が第１の緩衝室１に設けられていると共
に、第２の緩衝室３内の気体を外部に排出する第２の排
気手段としてのガス排出管が第２の緩衝室３に設けられ
ている。Further, a first branch gas pipe system 45 as a first inert gas supply means having a stop valve 44 and branching from the above-mentioned gas pipe system 34 is connected to the first buffer chamber 1. And a second branch gas pipe system 47 as a second inert gas supply means having a stop valve 46 which is branched from the gas pipe 34 and has a stop valve 46.
It is connected to the. Although not shown, a gas exhaust pipe as first exhaust means for exhausting the gas in the first buffer chamber 1 to the outside is provided in the first buffer chamber 1 and the second buffer is provided. A gas exhaust pipe as second exhaust means for exhausting the gas in the chamber 3 to the outside is provided in the second buffer chamber 3.
【００２９】以下、上記構成の化学反応装置の運転方法
について詳細に説明する。Hereinafter, the method of operating the chemical reaction apparatus having the above-described configuration will be described in detail.
【００３０】まず、基板の処理が行なわれておらず、化
学反応装置が運転可能で待機状態にあるときには、第１
のゲートバルブ４０、第２のゲートバルブ４１、第３の
ゲートバルブ５３及び第４のゲートバルブ５４がすべて
閉じており、反応室２内に化学反応装置の外部から大気
が流入することはない。この場合には、第１の分岐ガス
管系４５のストップバルブ４４及び第２の分岐ガス管系
４７のストップバルブ４６はそれぞれ閉じられており、
第１及び第２の緩衝室１，３への不活性ガスの混入も阻
止されている。First, when the substrate is not being processed and the chemical reaction apparatus is operable and in a standby state, the first
, The second gate valve 41, the third gate valve 53, and the fourth gate valve 54 are all closed, so that the atmosphere does not flow into the reaction chamber 2 from outside the chemical reaction apparatus. In this case, the stop valve 44 of the first branch gas pipe system 45 and the stop valve 46 of the second branch gas pipe system 47 are closed, respectively.
Mixing of the inert gas into the first and second buffer chambers 1 and 3 is also prevented.
【００３１】次に、基板が搬送されてくる場合には、第
１の緩衝室１の基板搬入側の適当な箇所に設けられた基
板検出手段が基板を検出すると、第１のゲートバルブ４
０が開き、基板の第１の緩衝室１内への受入れが可能に
なる。基板が第１の緩衝室１に搬入されると、第１のゲ
ートバルブ４０を閉じた後に第２のゲートバルブ４１を
開いて基板の反応室２内への受入れを可能にする。基板
が反応室２内に搬入されると、第２のゲートバルブ４１
を閉じる。Next, when the substrate is conveyed, when the substrate detecting means provided at an appropriate position on the substrate loading side of the first buffer chamber 1 detects the substrate, the first gate valve 4
0 is opened and the substrate can be received into the first buffer chamber 1. When the substrate is carried into the first buffer chamber 1, the first gate valve 40 is closed and then the second gate valve 41 is opened to allow the substrate to be received in the reaction chamber 2. When the substrate is carried into the reaction chamber 2, the second gate valve 41
Close.
【００３２】以上述べたシーケンスによって基板５０は
第１の緩衝室１を通過して反応室２に移動するわけであ
るが、この間において、第１のゲートバルブ４０又は第
２のゲートバルブ４１のいずれかが常に閉じているため
に、反応室２の排気機構が動作していても化学反応装置
外の大気が第１の緩衝室１を経由して反応室２内に吸引
されない。ごく僅かでも大気の混入を回避したい場合に
は基板５０が第１の緩衝室１内にあり且つ第１及び第２
のゲートバルブ４０，４１の両方が閉じている時間帯
に、第１の分岐ガス管系４５から大量の不活性ガス例え
ば窒素やアルゴン等を供給して第１の緩衝室１内の大気
をパージ（払い出し）しておくことで対応可能である。
第１の緩衝室１内の大気のパージが完了した後において
は、基板５０が反応室２内に収納されるまでの間だけ微
量の不活性ガスを供給しておけば十分であり、常時第１
の分岐ガス管系４５から不活性ガスを供給する必要の無
いことは説明を要しないであろう。According to the above-described sequence, the substrate 50 moves to the reaction chamber 2 after passing through the first buffer chamber 1. During this time, either the first gate valve 40 or the second gate valve 41 is used. Since the gas is always closed, the atmosphere outside the chemical reaction device is not sucked into the reaction chamber 2 via the first buffer chamber 1 even when the exhaust mechanism of the reaction chamber 2 is operating. When it is desired to avoid entry of the atmosphere even if it is very slight, the substrate 50 is located in the first buffer chamber 1 and the first and second substrates 50 are disposed.
During the period when both of the gate valves 40 and 41 are closed, a large amount of inert gas such as nitrogen or argon is supplied from the first branch gas pipe system 45 to purge the atmosphere in the first buffer chamber 1. (Payout) can be handled.
After the purge of the atmosphere in the first buffer chamber 1 is completed, it is sufficient to supply a small amount of inert gas only until the substrate 50 is stored in the reaction chamber 2. 1
It will not be necessary to explain that there is no need to supply the inert gas from the branch gas line system 45 of this example.
【００３３】第１の緩衝室１の搬送方向の長さを短くす
るためには、第１の緩衝室１内を基板が通過する際、基
板が第１の緩衝室１内に収納された時点で一旦搬送ロー
ラーの回転を止めて基板を停止させればよいことも明白
であろう。In order to reduce the length of the first buffer chamber 1 in the transport direction, when the substrate passes through the first buffer chamber 1 when the substrate is stored in the first buffer chamber 1 It will be apparent that the substrate may be stopped by temporarily stopping the rotation of the transport roller.
【００３４】また、１枚目の基板が第１の緩衝室１を通
過して反応室２に収納された時点以降に上記のシーケン
スに従って２枚目以降の基板を連続的に処理可能である
ことは言うまでもない。Further, after the first substrate passes through the first buffer chamber 1 and is stored in the reaction chamber 2, the second and subsequent substrates can be continuously processed in accordance with the above sequence. Needless to say.
【００３５】基板が反応室２を通過した後、第２の緩衝
室３を経由して水洗室４に移動していく場合のゲートバ
ルブのシーケンスも同様な動作であり、基板５０が反応
室２における搬出側に接近した時点で、反応室２内の通
過時間から設定されるタイムシーケンスにより又は反応
室２内の適当な場所で基板５０を検知することにより、
第３のゲートバルブ４２を開いて基板５０を第２の緩衝
室３内に受け入れ可能にする。基板５０が第２の緩衝室
３内に移送されると、第３のゲートバルブ４２を閉じた
後に第４ゲートバルブ４３を開いて、基板の水洗室４内
への受入れを可能にする。次に、基板５０が水洗室４内
に移送されると、第４のゲートバルブ４３を閉じる。When the substrate passes through the reaction chamber 2 and moves to the washing chamber 4 via the second buffer chamber 3, the sequence of the gate valve is the same operation. At the time of approaching the unloading side, by detecting the substrate 50 by a time sequence set from the transit time in the reaction chamber 2 or at an appropriate place in the reaction chamber 2
The third gate valve 42 is opened to allow the substrate 50 to be received in the second buffer chamber 3. When the substrate 50 is transferred into the second buffer chamber 3, the fourth gate valve 43 is opened after the third gate valve 42 is closed, so that the substrate can be received into the washing chamber 4. Next, when the substrate 50 is transferred into the washing chamber 4, the fourth gate valve 43 is closed.
【００３６】以上述べたシーケンスによって基板５０は
第２の緩衝室３を通過して水洗室４に移送されるわけで
あるが、この間、第３のゲートバルブ又は第４のゲート
バルブのいずれかが閉じているために、反応室２及び水
洗室４の排気機構が動作しても、化学反応装置外の大気
が水洗室４を経由して反応室２内に吸引されないことは
容易に理解されよう。また、水洗室４の水しぶきや水蒸
気が第２の緩衝室３を経由して反応室２内に吸引されな
いことも明らかである。According to the above-described sequence, the substrate 50 passes through the second buffer chamber 3 and is transferred to the rinsing chamber 4, during which time either the third gate valve or the fourth gate valve is operated. It will be easily understood that the atmosphere outside the chemical reactor is not sucked into the reaction chamber 2 via the washing chamber 4 even if the exhaust mechanism of the reaction chamber 2 and the washing chamber 4 is operated because of the closed state. . It is also clear that the water spray and water vapor in the washing chamber 4 are not sucked into the reaction chamber 2 via the second buffer chamber 3.
【００３７】ごく僅かでも大気や水分の混入を回避した
い場合には、基板５０が第２の緩衝室３内にあり且つ第
３及び第４のゲートバルブ４２，４３の両方が閉じてい
る時間帯に第２の分岐ガス管系４７から大量の不活性ガ
ス例えば窒素やアルゴン等を供給して第２の緩衝室３内
の大気や水分をパージ（払い出し）しておくことで全く
同様に対応可能となる。常時、第２の分岐ガス管系４７
から不活性ガスを流す必要が無いことや、第２の緩衝室
３の搬送方向の長さを短くするためには、基板が第２の
緩衝室３内に収納された時点で一旦搬送ローラーの回転
を止めて基板を停止させればよいことも明白であろう。When it is desired to avoid the entry of air or moisture even if it is very slight, the time period in which the substrate 50 is in the second buffer chamber 3 and both the third and fourth gate valves 42 and 43 are closed. A large amount of inert gas, such as nitrogen or argon, is supplied from the second branch gas pipe system 47 to purge (discharge) the atmosphere and moisture in the second buffer chamber 3, and the same is possible. Becomes Always the second branch gas pipe system 47
In order to eliminate the need for flowing an inert gas from above and to shorten the length of the second buffer chamber 3 in the transport direction, once the substrate is stored in the second buffer chamber 3, It will also be clear that the rotation can be stopped to stop the substrate.
【００３８】以上説明したように、請求項１の発明に係
る化学反応装置によると、第１の緩衝室の基板搬入口を
開閉する第１のゲートバルブ、第１の連通孔を開閉する
第２のゲートバルブ、第２の連通孔を開閉する第３のゲ
ートバルブ及び第３の連通孔を開閉する第４のゲートバ
ルブを備えているため、第１のゲートバルブ又は第２の
ゲートバルブのいずれかを常に閉じた状態にしておくこ
とにより、反応室が第１の緩衝室を介して大気と連通す
ることはなく、第３のゲートバルブ又は第４のゲートバ
ルブのいずれかを常に閉じた状態にしておくことによ
り、反応室が第２の緩衝室及び水洗室を介して大気と連
通することがないと共に、第１及び第２の緩衝室並びに
反応室が閉空間になるので、薬液の変質や劣化防止のた
めに必要なパージ用不活性ガスの使用量が少量で済み且
つ第１及び第２緩衝室並びに反応室の排気量も少量で済
む。また、第１の不活性ガス供給手段により不活性ガス
を第１の緩衝室に供給すると共に第１の排気手段により
第１の緩衝室内の気体を排出することにより、第１の緩
衝室内の大気をパージすることができ、また、第２の不
活性ガス供給手段により不活性ガスを第２の緩衝室に供
給すると共に第２の排気手段により第２の緩衝室内の気
体を排出することにより、第２の緩衝室内の大気をパー
ジすることができるので、反応室への大気の混入を確実
に防止することが可能である。 As described above, according to the chemical reaction device of the first aspect of the present invention, the first gate valve for opening and closing the substrate loading port of the first buffer chamber and the second gate for opening and closing the first communication hole are provided. The first gate valve or the second gate valve, because it includes the third gate valve that opens and closes the second communication hole and the fourth gate valve that opens and closes the third communication hole. By keeping the valve closed, the reaction chamber does not communicate with the atmosphere via the first buffer chamber, and either the third gate valve or the fourth gate valve is always closed. By doing so, the reaction chamber does not communicate with the atmosphere via the second buffer chamber and the rinsing chamber, and the first and second buffer chambers and the reaction chamber become closed spaces. For purging necessary to prevent deterioration Exhaust amount of usage requires a small amount and the first and second buffer chamber and the reaction chamber of the active gas also requires only a small amount. In addition, the first inert gas supply means supplies inert gas.
To the first buffer chamber and by the first exhaust means
By discharging the gas in the first buffer chamber, the first buffer is released.
The atmosphere in the collision room can be purged, and the second
The inert gas is supplied to the second buffer chamber by the active gas supply means.
And the air in the second buffer chamber is supplied by the second exhaust means.
By discharging the body, the atmosphere in the second buffer chamber is
Air to the reaction chamber.
Can be prevented.
【００３９】このため、請求項１の発明によると、大気
又は水分の混入による薬液の変質や劣化がほとんど生じ
ないため薬液寿命の長期化が著しく推進されると共に、
パージ用不活性ガスの使用量及び緩衝室や反応室の排気
量が少量で済むため省資源及び省エネルギーの効果が極
めて大きい。Therefore, according to the first aspect of the present invention, the chemical solution is hardly deteriorated or deteriorated due to mixing of air or moisture, so that the life of the chemical solution is prolonged remarkably.
Since the amount of the inert gas for purging and the amount of exhaust in the buffer chamber and the reaction chamber are small, the effect of resource saving and energy saving is extremely large.
【００４０】[0040]
【００４１】請求項２の発明に係る化学反応装置の使用
方法によると、第１のゲートバルブ及び第２のゲートバ
ルブが同時に開いていることがないと共に第１の緩衝室
内の大気がパージされるため、反応室が第１の緩衝室を
介して大気と連通している状態が生じない。また、第３
のゲートバルブ及び第４のゲートバルブが同時に開いて
いることがないと共に第２の緩衝室内の大気がパージさ
れるため、反応室が第２の緩衝室を介して水洗室ひいて
は大気と連通している状態は生じない。このため、大気
又は水分の混入による薬液の変質や劣化がほとんど生じ
ないので、薬液寿命の長期化が著しく推進される。According to the method of using the chemical reaction apparatus according to the second aspect of the present invention, the first gate valve and the second gate valve are not simultaneously opened and the first buffer chamber is not used .
Since the atmosphere in the inside is purged, a state in which the reaction chamber communicates with the atmosphere via the first buffer chamber does not occur. Also, the third
And the fourth gate valve are not simultaneously opened and the atmosphere in the second buffer chamber is purged.
Therefore, a state in which the reaction chamber is in communication with the washing chamber and the atmosphere via the second buffer chamber does not occur. Therefore, it caused little deterioration or degradation of the drug solution due to contamination of the atmosphere or water
Since there is no chemical solution, the prolongation of the life of the chemical solution is significantly promoted.
【図１】本発明の一実施例に係る化学反応装置の概略構
成図である。FIG. 1 is a schematic configuration diagram of a chemical reaction device according to one embodiment of the present invention.
【図２】従来の化学反応装置の概略構成図である。FIG. 2 is a schematic configuration diagram of a conventional chemical reaction device.
【図３】従来の化学反応装置における反応室の断面構成
図である。FIG. 3 is a sectional configuration diagram of a reaction chamber in a conventional chemical reaction device.
１ 第１の緩衝室 ２ 反応室 ３ 第２の緩衝室 ４ 水洗室 ５ 乾燥室 ６ 薬液循環ポンプ ９ 薬液循環用配管系 １０ 薬液噴射ノズル １１ 薬液回収配管 １２ 薬液循環タンク １５ 薬液供給用配管系 １７ 薬液廃棄用配管系 １９ 純水供給用配管系 ２０ 純水噴射ノズル ２４ 乾燥ガス供給配管 ２５ 乾燥ガス噴射ノズル ２７ 搬送ローラー ３０ 排気管 ３４ ガス配管系 ４０ 第１のゲートバルブ ４１ 第２のゲートバルブ ４２ 第３のゲートバルブ ４３ 第４のゲートバルブ ４５ 第１の分岐ガス管系（第１の不活性ガス供給手
段） ４７ 第２の分岐ガス管系（第２の不活性ガス供給手
段） ５０ 基板 ５１ 基板搬入口 ５２ 第１の連通孔 ５３ 第２の連通孔 ５４ 第３の連通孔DESCRIPTION OF SYMBOLS 1 1st buffer room 2 Reaction room 3 2nd buffer room 4 Rinse room 5 Drying room 6 Chemical liquid circulation pump 9 Chemical liquid circulation piping system 10 Chemical liquid injection nozzle 11 Chemical liquid recovery piping 12 Chemical liquid circulation tank 15 Chemical liquid supply piping system 17 Chemical liquid disposal piping system 19 Pure water supply piping system 20 Pure water injection nozzle 24 Dry gas supply piping 25 Dry gas injection nozzle 27 Transport roller 30 Exhaust pipe 34 Gas piping system 40 First gate valve 41 Second gate valve 42 Third gate valve 43 Fourth gate valve 45 First branch gas pipe system (first inert gas supply means) 47 Second branch gas pipe system (second inert gas supply means) 50 Substrate 51 Substrate carry-in port 52 First communication hole 53 Second communication hole 54 Third communication hole
Claims (2)
処理を行なう反応室と、化学処理が施された基板に純水
を供給して洗浄を行なう水洗室と、上記反応室の基板搬
入側に隣接して設けられ第１の連通孔を介して上記反応
室と連通しており上記反応室内の反応液の拡散を防止す
る第１の緩衝室と、上記反応室と上記水洗室との間に設
けられ第２の連通孔を介して上記反応室と連通し且つ第
３の連通孔を介して上記水洗室と連通しており上記反応
室内の処理液が上記水洗室に持ち出されるのを防止する
第２の緩衝室と、上記第１の緩衝室の基板搬入口を開閉
する第１のゲートバルブと、上記第１の連通孔を開閉す
る第２のゲートバルブと、上記第２の連通孔を開閉する
第３のゲートバルブと、上記第３の連通孔を開閉する第
４のゲートバルブと、上記第１の緩衝室に不活性ガスを
供給する第１の不活性ガス供給手段と、上記第１の緩衝
室内の気体を排出する第１の排気手段と、上記第２の緩
衝室に不活性ガスを供給する第２の不活性ガス供給手段
と、上記第２の緩衝室内の気体を排出する第２の排気手
段とを備えていることを特徴とする化学反応装置。1. A reaction chamber for supplying a reaction liquid to a loaded substrate to perform a chemical treatment, a water washing chamber for supplying pure water to the chemically treated substrate for cleaning, and a substrate in the reaction chamber. A first buffer chamber that is provided adjacent to the loading side and communicates with the reaction chamber through a first communication hole to prevent diffusion of a reaction solution in the reaction chamber; and a reaction chamber and a washing chamber. Between the reaction chamber through the second communication hole and the washing chamber through the third communication hole, and the processing liquid in the reaction chamber is taken out to the washing chamber. a second buffer chamber for preventing a first gate valve for opening and closing the substrate loading port of the first buffer chamber, and a second gate valve for opening and closing the first communication hole, the second a third gate valve for opening and closing the communication hole, a fourth gate valve for opening and closing the third communication hole , An inert gas is supplied to the first buffer chamber.
First inert gas supply means for supplying, and the first buffer
A first exhaust means for exhausting the gas in the room;
Second inert gas supply means for supplying an inert gas to the collision room
And a second exhaust means for exhausting gas from the second buffer chamber.
And a step .
処理を行なう反応室と、化学処理が施された基板に純水
を供給して洗浄を行なう水洗室と、上記反応室の基板搬
入方向手前側に隣接して設けられ第１の連通孔を介して
上記反応室と連通しており上記反応室内の反応液の拡散
を防止する第１の緩衝室と、上記反応室と上記水洗室と
の間に設けられ第２の連通孔を介して上記反応室と連通
し且つ第３の連通孔を介して上記水洗室と連通しており
上記反応室内の処理液が上記水洗室に持ち出されるのを
防止する第２の緩衝室と、上記第１の緩衝室の基板搬入
口を開閉する第１のゲートバルブと、上記第１の連通孔
を開閉する第２のゲートバルブと、上記第２の連通孔を
開閉する第３のゲートバルブと、上記第３の連通孔を開
閉する第４のゲートバルブと、上記第１の緩衝室に不活
性ガスを供給する第１の不活性ガス供給手段と、上記第
１の緩衝室内の気体を排出する第１の排気手段と、上記
第２の緩衝室に不活性ガスを供給する第２の不活性ガス
供給手段と、上記第２の緩衝室内の気体を排出する第２
の排気手段とを備えた化学反応装置の使用方法であっ
て、上記第１のゲートバルブを開いて基板を上記第１の
緩衝室に搬入した後、上記第１のゲートバルブを閉じ、
その後、上記第１のゲートバルブ及び第２のゲートバル
ブが閉じられている上記第１の緩衝室に上記第１の不活
性ガス供給手段から不活性ガスを供給すると共に上記第
１の排気手段により上記第１の緩衝室の気体を排出し、
次に、上記第２のゲートバルブを開けて基板を上記第１
の緩衝室から上記反応室に移送した後、上記第２のゲー
トバルブを閉じ、次に、上記反応室において基板に化学
処理を施し、次に、上記第３のゲートバルブを開けて基
板を上記第２の緩衝室に搬入した後、上記第３のゲート
バルブを閉じ、その後、上記第３のゲートバルブ及び第
４のゲートバルブが閉じられている上記第２の緩衝室に
上記第２の不活性ガス供給手段から不活性ガスを供給す
ると共に上記第２の排気手段により上記第２の緩衝室の
気体を排出し、次に、上記第４のゲートバルブを開けて
基板を上記水洗室に移送することを特徴とする化学反応
装置の使用方法。2. A reaction chamber for supplying a reaction solution to a loaded substrate to perform a chemical treatment, a water washing chamber for supplying pure water to the chemically treated substrate for cleaning, and a substrate for the reaction chamber. A first buffer chamber, which is provided adjacent to the front side in the loading direction and communicates with the reaction chamber via a first communication hole to prevent diffusion of a reaction solution in the reaction chamber; The processing liquid in the reaction chamber is taken out to the washing chamber through the second communication hole, which is provided between the reaction chamber and the washing chamber through the third communication hole, and communicates with the washing chamber through the third communication hole. A second gate valve for opening and closing the substrate carrying-in port of the first buffer chamber, a second gate valve for opening and closing the first communication hole, A third gate valve for opening and closing the second communication hole, and a fourth gate for opening and closing the third communication hole Inactive in valve and first buffer chamber
First inert gas supply means for supplying an inert gas;
A first exhaust means for exhausting gas from the buffer chamber;
A second inert gas for supplying an inert gas to the second buffer chamber
Supply means, and a second means for discharging gas from the second buffer chamber.
A method of using a chemical reaction apparatus comprising: an exhaust unit, wherein the first gate valve is opened, the substrate is loaded into the first buffer chamber, and then the first gate valve is closed.
After that, the first gate valve and the second gate valve
The first inactive chamber is closed by the first inactive chamber.
Supply inert gas from the reactive gas supply means and
The gas in the first buffer chamber is discharged by the first exhaust means,
Next, the second gate valve is opened to move the substrate to the first gate valve.
After the transfer from the buffer chamber to the reaction chamber, the second gate valve is closed, then the substrate is subjected to chemical treatment in the reaction chamber, and then the third gate valve is opened to remove the substrate from the substrate. After being carried into the second buffer chamber, the third gate valve is closed, and then the third gate valve and the third gate valve are closed .
In the second buffer chamber where the gate valve of No. 4 is closed
The inert gas is supplied from the second inert gas supply means.
And the second exhaust means makes the second buffer chamber
Discharging the gas, and then opening the fourth gate valve to transfer the substrate to the washing chamber;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14352593A JP2905038B2 (en) | 1993-06-15 | 1993-06-15 | Chemical reaction apparatus and method of using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14352593A JP2905038B2 (en) | 1993-06-15 | 1993-06-15 | Chemical reaction apparatus and method of using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH076994A JPH076994A (en) | 1995-01-10 |
| JP2905038B2 true JP2905038B2 (en) | 1999-06-14 |
Family
ID=15340771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14352593A Expired - Fee Related JP2905038B2 (en) | 1993-06-15 | 1993-06-15 | Chemical reaction apparatus and method of using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2905038B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200292084A1 (en) * | 2016-06-02 | 2020-09-17 | Applied Materials, Inc. | Gate valve for continuous tow processing |
-
1993
- 1993-06-15 JP JP14352593A patent/JP2905038B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH076994A (en) | 1995-01-10 |
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