JP2886431B2 - Vibrating gyro sensor - Google Patents
Vibrating gyro sensorInfo
- Publication number
- JP2886431B2 JP2886431B2 JP5292586A JP29258693A JP2886431B2 JP 2886431 B2 JP2886431 B2 JP 2886431B2 JP 5292586 A JP5292586 A JP 5292586A JP 29258693 A JP29258693 A JP 29258693A JP 2886431 B2 JP2886431 B2 JP 2886431B2
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- JP
- Japan
- Prior art keywords
- vibrator
- axis
- gyro sensor
- axis direction
- semiconductor substrate
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】この発明は、コリオリ力を検出し
て回転角速度を検出する振動ジャイロセンサーに係り、
基板表面の所要軸方向に磁場中の交流電流にて発振する
振動子とその中に基板厚み方向に振動可能な測定子を半
導体シリコンウエハーの加工プロセスを用いて形成し、
所要軸を回転軸とする回転力を測定子の厚み方向の振動
として静電容量変化で検出し回転角速度を測定するセン
サー構成を１枚の基板に軸方向を変えて配置することに
より、２軸の角速度の検出を可能にした薄く小型の振動
ジャイロセンサーに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vibrating gyro sensor for detecting a Coriolis force and detecting a rotational angular velocity.
A vibrator that oscillates with an alternating current in a magnetic field in a required axial direction on the substrate surface and a measuring element that can vibrate in the thickness direction of the substrate therein are formed using a semiconductor silicon wafer processing process,
By arranging a sensor configuration that measures the rotational angular velocity by detecting the rotational force with the required axis as the rotational axis as a vibration in the thickness direction of the tracing stylus by a change in capacitance and measuring the rotational angular velocity on one substrate, the axial direction is changed. The present invention relates to a thin and small vibrating gyro sensor capable of detecting an angular velocity.
【０００２】[0002]
【従来の技術】民生用家電品、自動車、ロボット、鉄道
車両などの分野において、種々の動作制御のため、加速
度や角速度を検出することが必要となるが、加速度を検
出するセンサーとしては、圧電式、磁気式、歪みゲージ
式、光学式、静電容量式などがあり、回転角速度を検出
するセンサーとしては、振動体に角速度が働いた時に発
生するコリオリ力を検出することにより、物体の角速度
を求める振動ジャイロセンサーが提案されている。2. Description of the Related Art In the fields of consumer electronics, automobiles, robots, railway vehicles, and the like, it is necessary to detect acceleration and angular velocity for various operation controls. Type, magnetic type, strain gauge type, optical type, capacitance type, etc.The sensor that detects the angular velocity of rotation can detect the angular velocity of the object by detecting the Coriolis force generated when the angular velocity acts on the vibrating body The vibration gyro sensor which asks for is proposed.
【０００３】また、コリオリ力を検出する角速度センサ
ーとして、特開平５−２４０６４９号に、音叉形状に形
成した駆動素子が車両に垂設されて、一対の振動片にそ
れぞれ駆動用圧電素子が設けられ、さらにその先端に測
定用振動片が測定用圧電素子とともに互いに９０度位相
をずらして配置され、駆動用圧電素子にて所定の周波数
で加振されながら、当該車両の角速度に応じたコリオリ
力を受けて振動した測定用振動片の変位を圧電素子にて
圧電変換信号として検出し、これを信号処理回路にて処
理検出する構成が提案されている。As an angular velocity sensor for detecting a Coriolis force, a driving element formed in a tuning fork shape is vertically mounted on a vehicle and a driving piezoelectric element is provided on each of a pair of vibrating pieces as disclosed in Japanese Patent Application Laid-Open No. H5-240649. Further, a vibrating piece for measurement is arranged at the tip thereof with a phase shifted by 90 degrees together with the piezoelectric element for measurement, and while being vibrated at a predetermined frequency by the piezoelectric element for driving, a Coriolis force according to the angular velocity of the vehicle is generated. There has been proposed a configuration in which a displacement of a measuring vibrating piece received and vibrated is detected as a piezoelectric conversion signal by a piezoelectric element, and the signal is processed and detected by a signal processing circuit.
【０００４】また、１個の製品内に多軸が検出できる素
子を組み込んだ構成として、多軸振動モノリシックジャ
イロスコープが提案（特開平５−２４８８７４号）され
ている。[0004] A multi-axis vibration monolithic gyroscope has been proposed (Japanese Patent Laid-Open No. 5-248874) as a configuration in which an element capable of detecting multiple axes is incorporated in one product.
【０００５】[0005]
【発明が解決しようとする課題】前述の動作制御のため
２軸以上の角速度の検出が必要となる場合、従来は上記
の圧電素子による角速度センサーを初め、いずれの構成
も１軸検出用センサーを複数組み込むことによって対応
しており、構成がさらに複雑化する。In the case where it is necessary to detect angular velocities of two or more axes for the above-described operation control, conventionally, the angular velocity sensor using a piezoelectric element as described above and a sensor for detecting one axis are used in both configurations. This is supported by incorporating a plurality of components, which further complicates the configuration.
【０００６】また、特開平５−２４８８７４号に提案さ
れている多軸振動モノリシックジャイロスコープでは、
精密に加工したＨ型フレームと質量部材、その中央に配
置される基板厚み方向の軸方向の動きを規定するための
ポスト及びらせん型ばねが形成され、さらにその両側に
振動部を形成する一対の質量要素と多数の駆動部、なら
びに前記フレーム部端に設けられた検出容量などから構
成され、これらの構成部品がサーフェイスマイクロマシ
ニングにより基板上に薄膜を形成し、それを所定の形状
にエッチングすることを繰り返して製造するプロセスを
必要とし、必ずしも製造性がよいとは言えない構成であ
る。In the multi-axis vibration monolithic gyroscope proposed in Japanese Patent Laid-Open No. 5-248874,
A precisely machined H-shaped frame and mass member, a post and a helical spring for regulating the axial movement in the thickness direction of the substrate disposed at the center thereof are formed, and a pair of vibrating parts are formed on both sides thereof. It is composed of a mass element, a number of driving parts, and a detection capacitor provided at the end of the frame part.These components form a thin film on a substrate by surface micromachining and etch it into a predetermined shape. This is a configuration that requires a process of repeatedly manufacturing, and is not necessarily good in manufacturability.
【０００７】この発明は、半導体シリコンウエハーの加
工プロセスを用いて容易に製造できるコリオリ力を検出
する角速度センサーの提供を目的とし、また、１個の製
品内に多軸の角速度が検出できる素子を組み込んだ振動
ジャイロセンサーの提供を目的としている。SUMMARY OF THE INVENTION It is an object of the present invention to provide an angular velocity sensor for detecting Coriolis force which can be easily manufactured by using a semiconductor silicon wafer processing process, and an element capable of detecting multi-axial angular velocity in one product. The purpose is to provide a built-in vibration gyro sensor.
【０００８】[0008]
【課題を解決するための手段】この発明は、半導体基板
上の直交２軸をＸ，Ｙ、基板厚み方向をＺとした場合、
表面に導体を設けた矩形枠からなる振動子を半導体基板
の矩形開口部内にＸ，Ｙいずれかの軸方向の複数のビー
ムにてＸ，Ｙ方向のいずれかの軸方向に振動可能に接続
配置し、振動子の矩形枠内に両面に電極を設けた測定子
を振動子のビームとは直交する軸方向の複数のビームに
てＺ軸方向に振動可能に接続配置し、半導体基板の両面
に測定子の電極に所要間隔で対向配置する電極を設けた
ガラス層を積層し、さらにガラス層の上に磁石層を積層
した構成からなり、磁石層による磁場中で振動子の導体
に交流電流を流して振動させ、振動子のビーム軸を回転
軸とする回転力を測定子のＺ軸方向の振動として静電容
量変化を検出し、回転角速度を測定することを特徴とす
る振動ジャイロセンサーである。According to the present invention, when two orthogonal axes on a semiconductor substrate are X and Y and the thickness direction of the substrate is Z,
A vibrator made of a rectangular frame having a conductor provided on the surface is connected and arranged in a rectangular opening of the semiconductor substrate so as to be vibrated in any of the X and Y directions by a plurality of beams in the X and Y directions. A measuring element having electrodes provided on both sides in a rectangular frame of the vibrator is connected and arranged so as to be able to vibrate in the Z-axis direction with a plurality of beams in an axial direction orthogonal to the beam of the vibrator, and is arranged on both sides of the semiconductor substrate. A glass layer provided with electrodes facing each other at a required interval is laminated on the electrode of the probe, and a magnet layer is further laminated on the glass layer.AC current is applied to the conductor of the vibrator in the magnetic field generated by the magnet layer. A vibrating gyro sensor characterized by detecting a change in capacitance as a vibration in the Z-axis direction of a measuring element using a rotational force about a beam axis of the vibrator as a rotation axis and measuring a rotational angular velocity. .
【０００９】また、この発明は、上記の構成において、
１枚の半導体基板に振動子のビーム軸をＸ軸方向とした
ものおよびＹ軸方向としたものの２種を設けて、Ｘ，Ｙ
２軸の回転角速度を測定可能とした振動ジャイロセンサ
ー、磁場中で振動する振動子の導体に発生した誘起電流
を駆動電流に正帰還させて、振動子をその共振周波数で
発振させる振動ジャイロセンサー、を併せて提案する。Further, the present invention provides the above-mentioned configuration,
Two types, one in which the beam axis of the vibrator is set in the X-axis direction and one in which the beam axis of the vibrator is set in the Y-axis direction, are provided on one semiconductor substrate.
A vibrating gyro sensor capable of measuring the rotational angular velocities of two axes, a vibrating gyro sensor in which an induced current generated in a conductor of a vibrator vibrating in a magnetic field is positively fed back to a drive current, and the vibrator oscillates at its resonance frequency; Are also proposed.
【００１０】[0010]
【作用】この発明による振動ジャイロセンサーは、半導
体シリコンウエハーの加工プロセスを用いて形成するも
ので、半導体基板上の直交２軸をＸ，Ｙ、基板厚み方向
をＺとした場合、半導体基板に例えばＸ軸方向の一対あ
るいは複数のビームにて接続した矩形枠からなる振動子
をＹ軸方向に振動可能に設け、さらにこの振動子の中に
Ｙ軸方向の一対あるいは複数のビームにて接続した矩形
の測定子をＺ軸方向に振動可能に設け、測定子の両面に
設けた電極に所要間隔で対向配置する電極を設けたガラ
ス層、さらに磁石層を積層した構成からなり、ガラス層
の外側の一対の磁石層による磁場中で振動子表面に設け
た導体に交流電流を流してローレンツ力にて振動子を振
動させることにより速度成分を得て、ここで振動子のビ
ーム軸すなわち、Ｘ軸を回転軸とする回転が加わると測
定子のＺ軸方向にコリオリ力が作用して、測定子のＺ軸
方向の振動として検知されるコリオリ力を一対のガラス
層の電極間の静電容量変化として検出し、これよりＸ軸
回りの回転角速度を測定することができる。さらに、こ
の発明は、例えば上記構成のセンサーの隣に相互に９０
度位相をずらした構成のもう１つのセンサーを形成する
ことにより、Ｘ軸並びにＹ軸回りの回転角速度を同時に
測定することができる振動ジャイロセンサーが得られる
もので、製造に際し１枚の半導体基板に同時に上記の２
種のセンサー構造を形成加工でき、電極を設けたガラス
層、磁石層も容易に積層でき、製造性にすぐれた構成で
ある。The vibration gyro sensor according to the present invention is formed by using a semiconductor silicon wafer processing process. When two orthogonal axes on a semiconductor substrate are X and Y and the thickness direction of the substrate is Z, for example, A vibrator made of a rectangular frame connected by a pair or a plurality of beams in the X-axis direction is provided so as to be able to vibrate in the Y-axis direction, and a rectangle connected by a pair or a plurality of beams in the Y-axis direction in the vibrator. Is provided so as to be capable of vibrating in the Z-axis direction, a glass layer provided with electrodes arranged opposite to the electrodes provided on both sides of the probe at a required interval, and a magnet layer is further laminated. A velocity component is obtained by passing an alternating current through a conductor provided on the surface of the vibrator in a magnetic field generated by a pair of magnet layers to vibrate the vibrator with Lorentz force, and the beam axis of the vibrator, that is, When rotation about the axis is applied, Coriolis force acts in the Z-axis direction of the tracing stylus, and the Coriolis force detected as vibration in the Z-axis direction of the tracing stylus is used as the capacitance between the electrodes of the pair of glass layers. A change is detected, and the rotation angular velocity about the X axis can be measured from the change. In addition, the present invention provides a method in which, for example, 90
By forming another sensor having a configuration shifted in phase, a vibration gyro sensor capable of simultaneously measuring the rotational angular velocities around the X axis and the Y axis can be obtained. At the same time
Various types of sensor structures can be formed and processed, and glass layers and magnet layers provided with electrodes can be easily laminated, and the configuration is excellent in manufacturability.
【００１１】[0011]
【実施例】以下に図面に基づいてこの発明による２軸の
回転角速度を測定可能とした振動ジャイロセンサーの一
実施例を詳述する。図１はこの発明による振動ジャイロ
センサーの分解斜視説明図である。図２は振動子の発振
用電気回路を示す説明図であり、図３は測定子の変位を
静電容量変化として検出するための回路説明図である。
この発明による振動ジャイロセンサーは、中央のシリコ
ン層１を挟むように上下のガラス層２，３、さらにガラ
ス層２，３の外側に磁石層４，５を積層した構成からな
り、積層に際しては適宜接着材あるいは陽極接合法を使
用するが、さらに全体を樹脂被覆したり、磁気シールド
ケースで覆うなどの外装を施すことができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a vibrating gyro sensor according to the present invention capable of measuring a rotational angular velocity of two axes will be described in detail with reference to the drawings. FIG. 1 is an exploded perspective view of a vibration gyro sensor according to the present invention. FIG. 2 is an explanatory diagram showing an electric circuit for oscillating a vibrator, and FIG. 3 is a circuit explanatory diagram for detecting displacement of a measuring element as a change in capacitance.
The vibrating gyro sensor according to the present invention has a configuration in which the upper and lower glass layers 2 and 3 are sandwiched by the center silicon layer 1 and the magnet layers 4 and 5 are laminated outside the glass layers 2 and 3. Although an adhesive or an anodic bonding method is used, it is possible to further provide an exterior such as covering the whole with a resin or covering with a magnetic shield case.
【００１２】シリコン層１にはエッチングにて複数の溝
部を形成して振動子１０1，１０2及び測定子２０1，２
０2を形成している。詳述すると、一方を反転対向させ
て一対のコ字型溝部を設け、同様に該溝部内にさらに小
さな一対のコ字型溝部を向きを変えて設けることによ
り、シリコン層１上の直交２軸をＸ，Ｙ、基板厚み方向
をＺとした場合、図１の右側の構成例は、Ｘ軸方向で一
対のビーム１１1にて接続した矩形枠からなる振動子１
０1をＹ軸方向に振動可能に設け、さらにこの振動子１
０1の中にＹ軸方向の一対のビーム２１1にて接続した矩
形の測定子２０1をＺ軸方向に振動可能に設けてある。
また、シリコン層１の左側の構成例は、Ｙ軸方向で一対
のビーム１１2にて接続した矩形枠からなる振動子１０2
をＸ軸方向に振動可能に設け、さらにこの振動子１０2
の中にＹ軸方向の一対のビーム２１2にて接続した矩形
の測定子２０2をＺ軸方向に振動可能に設けてある。A plurality of grooves are formed in the silicon layer 1 by etching, and the vibrators 10 1 and 10 2 and the measuring elements 20 1 and 2 are formed.
0 2 . More specifically, a pair of U-shaped grooves are provided with one of them inverted and opposed, and similarly, a pair of smaller U-shaped grooves are provided in the grooves in different directions, thereby forming two orthogonal axes on the silicon layer 1. the X, Y, if the substrate thickness direction is Z, the right configuration example of FIG. 1, the transducer 1 comprising a rectangular frame which is connected by a pair of beams 11 1 in the X-axis direction
0 1 is provided so as to be able to vibrate in the Y-axis direction.
0 1 of the measuring element 20 1 of rectangles connected by a pair of beams 21 1 in the Y-axis direction in is provided to allow vibration in the Z-axis direction.
The configuration example of the left silicon layer 1, the vibrator 10 2 consisting of a rectangular frame which is connected by a pair of beams 11 2 in the Y-axis direction
The oscillatably provided in the X-axis direction and the vibrator 10 2
The gauge head 20 2 of the rectangle is connected with the Y-axis direction of the pair of beams 21 2 in are provided so as to be vibration in the Z-axis direction.
【００１３】シリコン層１を挟むように上下に配置する
ガラス層２，３は、短辺側に突部を設けて積層時にガラ
ス層２，３表面がシリコン層１に対して所定間隔を保持
するよう構成され、図３に示すように上記の測定子２０
1，２０2の両面に設けた電極２２1，２３1，２２2，２
３2と対向するようにガラス層２，３の対向側表面に、
電極２４1，２５1，２４2，２５2が設けてある。電極は
ここではＡｌを蒸着にて形成しているが、Ｃｕペースト
を所要パターンで塗布、焼き付けるなど、公知の薄膜形
成技術が適宜適用できる。さらに、振動子１０1，１０2
表面には、図２に示す如く、Ａｌの導体１２，１３が所
要のパターンで蒸着形成してある。また、ガラス層２，
３の外側に積層した磁石層４，５は、ここでは積層方向
の磁界を形成できるよう所要の磁極パターンを形成した
フェライト磁石を用いているが、種々組成のボンド磁石
シート等を適宜利用できる。The glass layers 2 and 3 arranged vertically so as to sandwich the silicon layer 1 are provided with protrusions on the short sides so that the surfaces of the glass layers 2 and 3 maintain a predetermined distance from the silicon layer 1 during lamination. The probe 20 is configured as shown in FIG.
1, 20 electrode 22 1 provided on both sides of the 2, 23 1, 22 2, 2
3 2 and the opposing surface of the glass layer 2 and 3 so as to face,
Electrodes 24 1 , 25 1 , 24 2 , and 25 2 are provided. Although the electrodes are formed by vapor deposition of Al here, a known thin film forming technique such as applying and baking a Cu paste in a required pattern can be applied as appropriate. Further, the vibrators 10 1 and 10 2
On the surface, as shown in FIG. 2, Al conductors 12 and 13 are formed by vapor deposition in a required pattern. In addition, the glass layer 2,
As the magnet layers 4 and 5 laminated on the outer side of 3, a ferrite magnet having a required magnetic pole pattern formed so as to form a magnetic field in the laminating direction is used, but a bonded magnet sheet of various compositions or the like can be appropriately used.
【００１４】図１の右側の構成例において、ビーム１１
1はＸ，Ｚ方向に大きな剛性を有し、Ｙ方向には非常に
剛性の弱い構造であり、上下磁石層４，５によるＺ方向
の磁場が加えられているので、振動子１０1に図２に示
す導体１２を通じて交流電流を流すとローレンツ力が発
生し、振動子１０1は交流電源と同じ周波数でＹ方向に
振動する。また、交流電源の周波数を振動子１０1の共
振周波数と一致させれば、小電力にて大きな振動を得る
ことができ、角速度検出効率は向上する。この方法とし
て、例えば図２に示すように振動子１０1にもう一つの
導体１３を設けておき、この導体１３が磁場中で振動す
る結果発生する誘起電流を入力部に正帰還することによ
り振動子１０1を共振周波数にて発振させることができ
る。In the configuration example on the right side of FIG.
1 has a large stiffness in X, Z direction, a weak structure very rigid in the Y direction, the magnetic field in the Z direction by the upper and lower magnetic layers 4 and 5 are added, the vibrator 10 1 Figure via the conductor 12 shown in 2 supplies the alternating current Lorentz force is generated when the vibrator 10 1 vibrates in the Y direction at the same frequency as the AC power supply. Further, if the frequency of the AC power source to match the resonant frequency of the vibrator 10 1, it is possible to obtain a large vibration at low power, the angular velocity detection efficiency is improved. Vibration As this method, for example, may be provided another conductor 13 to the transducer 10 1 as shown in FIG. 2, by the conductor 13 is positively fed back to the input of the induced current generated results that oscillates in a magnetic field it is possible to oscillate the child 10 1 at the resonance frequency.
【００１５】ここで、内部の測定子２０1と振動子１０1
をつなぐビーム２１1はＸ，Ｙ方向に大きな剛性を有
し、Ｚ方向に剛性の弱い構造であり、測定子２０1は振
動子１０1と同じ速度でＹ方向に振動する。この状態で
全体にＸ軸を回転軸とする回転が加わると、振動子１０
1と測定子２０1にはＺ方向にコリオリの力が作用する。
この時、Ｚ方向に十分に剛性の強いビーム１１1によっ
て外枠に結合されている振動子１０1はＺ方向にはほと
んど変位しないが、Ｚ方向に剛性の弱い構造を有するビ
ーム２１1で接続される測定子２０1はコリオリ力により
Ｚ方向に振動する。従って、測定子２０1の電極２２1，
２３1とガラス層２，３の電極２４1，２５1との電極間
の静電容量を検出することにより、測定子２０1に作用
したコリオリ力に比例する角速度を検出することができ
る。図３に検出回路の一例を示すが、破線にて示される
電圧型増幅器３０をシリコン層１上に上記のセンサーと
ともにパターニング製作し、この増幅器３０にて静電容
量に応じた電圧の交流に変換された信号をＡＣアンプ３
１にて増幅した後、振動子１０1の共振周波数にて検波
器３２で検波し、ＤＣアンプ３４にてＤＣ化することに
より出力電圧を得る。なお、図中３３はリファレンスク
ロックである。[0015] Here, the inside of the measuring element 20 1 and the vibrator 10 1
The beam 21 1 connecting the have greater stiffness in X, Y directions, a weak structure rigidity in the Z-direction, the measuring element 20 1 vibrates in the Y direction at the same speed as the vibrator 10 1. In this state, when a rotation about the X axis is applied to the whole, the vibrator 10
The 1 and the measuring element 20 1 Coriolis force acts in the Z direction.
At this time, the vibrator 10 1 coupled to the outer frame by the beam 11 1 having sufficiently strong rigidity in the Z direction is hardly displaced in the Z direction, but is connected by the beam 21 1 having a structure with low rigidity in the Z direction. the measuring element 20 1 which is vibrating in the Z direction by the Coriolis force. Thus, the electrode 22 1 of the probe 20 1,
By detecting the electrostatic capacity between 23 1 and the electrode 24 1 of the glass layer 2, 25 1 and the electrode, it is possible to detect an angular velocity proportional to the Coriolis force acting on the measuring element 20 1. FIG. 3 shows an example of the detection circuit. A voltage-type amplifier 30 indicated by a broken line is patterned and manufactured on the silicon layer 1 together with the above-described sensor, and the amplifier 30 converts the voltage into an alternating current corresponding to the capacitance. To the AC amplifier 3
After amplification at 1, an output voltage is obtained by detecting at the resonance frequency of the vibrator 101 with the detector 32 and converting it to DC with the DC amplifier 34. Note that reference numeral 33 in the figure denotes a reference clock.
【００１６】図１の右側の構成例は上述の如く、Ｘ軸を
回転軸とする回転角速度を検出することができ、左側の
構成例は振動子１０1，１０2及び測定子２０1，２０2を
相互に９０度位相をずらした構成であり、同様の作用効
果で、Ｙ軸を回転軸とする回転角速度を検出することが
でき、従って、１個の薄型センサーにてＸ，Ｙ２軸を回
転軸とする回転角速度を検出することができる。As described above, the configuration example on the right side of FIG. 1 can detect the rotational angular velocity about the X axis as the rotation axis, and the configuration example on the left side shows the vibrators 10 1 and 10 2 and the measuring elements 20 1 and 20. 2 are 90 degrees out of phase with each other. With the same effect, the rotational angular velocity about the Y axis can be detected. Therefore, the X and Y 2 axes can be detected by one thin sensor. It is possible to detect a rotational angular velocity as a rotation axis.
【００１７】[0017]
【発明の効果】この発明は、基板表面の所要軸方向に磁
場中の交流電流にて発振する振動子とその中に基板厚み
方向に振動可能な測定子を半導体シリコンウエハーの加
工プロセスを用いて形成し、所要軸を回転軸とする回転
力を測定子の厚み方向の振動として静電容量変化で検出
し回転角速度を測定する構成であり、極めて薄型化、小
型化が可能であり、また、上記構成のセンサーの隣に相
互に９０度位相をずらした構成のもう１つのセンサーを
形成することにより、Ｘ軸並びにＹ軸回りの回転角速度
を同時に測定することができる振動ジャイロセンサーが
得られるもので、製造に際し１枚の半導体基板に同時に
上記の２種のセンサー構造を形成加工でき、電極を設け
たガラス層、磁石層も容易に積層でき、製造性にすぐれ
た構成である。According to the present invention, a vibrator oscillated by an alternating current in a magnetic field in a required axial direction on the surface of a substrate and a measuring element capable of oscillating in a thickness direction of the substrate are provided by using a semiconductor silicon wafer processing process. It is configured to detect the rotational force with the required axis as the axis of rotation as the vibration in the thickness direction of the measuring element by the change in capacitance and measure the rotational angular velocity, so that it can be extremely thin and compact, A vibrating gyro sensor capable of simultaneously measuring the rotational angular velocities around the X-axis and the Y-axis is obtained by forming another sensor next to the sensor having the above-described configuration and having a configuration shifted from each other by 90 degrees. Thus, the two types of sensor structures described above can be formed and processed simultaneously on one semiconductor substrate during production, and the glass layer and the magnet layer provided with the electrodes can be easily laminated, and the configuration is excellent in manufacturability.
【図１】この発明による振動ジャイロセンサーの分解斜
視説明図である。FIG. 1 is an exploded perspective view of a vibration gyro sensor according to the present invention.
【図２】振動子の発振用電気回路を示す説明図である。FIG. 2 is an explanatory diagram showing an oscillation electric circuit of a vibrator.
【図３】測定子の変位を静電容量変化として検出するた
めの回路説明図である。FIG. 3 is an explanatory diagram of a circuit for detecting displacement of a tracing stylus as a change in capacitance.
１ シリコン層 ２，３ ガラス層 ４，５ 磁石層 １０1，１０2 振動子 １１1，１１2，２１1，２１2 ビーム １２，１３ 導体 ２０1，２０2 測定子 ２２1，２３1，２２2，２３2，２４1，２５1，２４2，
２５2 電極 ３０ 電圧型増幅器 ３１ ＡＣアンプ ３２ 検波器 ３３ リファレンスクロック ３４ ＤＣアンプReference Signs List 1 silicon layer 2, 3 glass layer 4, 5 magnet layer 10 1 , 10 2 vibrator 11 1 , 11 2 , 21 1 , 21 2 beam 12, 13 conductor 20 1 , 20 2 probe 22 1 , 23 1 , 22 2 , 23 2 , 24 1 , 25 1 , 24 2 ,
25 2 electrode 30 voltage type amplifier 31 AC amplifier 32 detector 33 reference clock 34 DC amplifier
フロントページの続き (56)参考文献 特開 平５−133976（ＪＰ，Ａ) 特開 平４−296657（ＪＰ，Ａ) 特開 平５−240874（ＪＰ，Ａ) 特開 平５−333038（ＪＰ，Ａ) 特公 平５−502945（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) G01C 19/56 G01P 9/04 Continuation of the front page (56) References JP-A-5-133976 (JP, A) JP-A-4-296657 (JP, A) JP-A-5-240874 (JP, A) JP-A-5-333038 (JP) , A) Tokiko Hei 5-502945 (JP, B2) (58) Field surveyed (Int. Cl. 6 , DB name) G01C 19/56 G01P 9/04
Claims (3)
厚み方向をＺとした場合、表面に導体を設けた矩形枠か
らなる振動子を半導体基板の矩形開口部内にＸ，Ｙいず
れかの軸方向の複数のビームにてＸ，Ｙ方向のいずれか
の軸方向に振動可能に接続配置し、振動子の矩形枠内に
両面に電極を設けた測定子を振動子のビームとは直交す
る軸方向の複数のビームにてＺ軸方向に振動可能に接続
配置し、半導体基板の両面に測定子の電極に所要間隔で
対向配置する電極を設けたガラス層を積層し、さらにガ
ラス層の上に磁石層を積層した構成からなり、磁石層に
よる磁場中で振動子の導体に交流電流を流して振動さ
せ、振動子のビーム軸を回転軸とする回転力を測定子の
Ｚ軸方向の振動として静電容量変化を検出し、回転角速
度を測定することを特徴とする振動ジャイロセンサー。1. When two axes orthogonal to each other on a semiconductor substrate are X and Y and the thickness direction of the substrate is Z, a vibrator made of a rectangular frame having a conductor provided on the surface is placed in a rectangular opening of the semiconductor substrate. A transducer having a plurality of beams in one of the axial directions connected so as to be able to vibrate in one of the X and Y directions and having electrodes provided on both sides in a rectangular frame of the transducer is a transducer beam. A glass layer is connected and arranged so as to be able to vibrate in the Z-axis direction with a plurality of beams in the orthogonal axial direction, and a glass layer is provided on both surfaces of the semiconductor substrate, which is provided with electrodes arranged opposite to the electrodes of the measuring element at required intervals. A magnet layer is laminated on the sensor, and an alternating current is passed through the conductor of the vibrator in a magnetic field generated by the magnet layer to vibrate, and the rotational force about the beam axis of the vibrator as the axis of rotation is measured in the Z-axis direction of the probe. It detects the change in capacitance as the vibration of Vibration gyro sensor to be a feature.
Ｘ軸方向としたものおよびＹ軸方向としたものの２種を
設けて、Ｘ，Ｙ２軸の回転角速度を測定可能としたこと
を特徴とする請求項１に記載の振動ジャイロセンサー。2. The method according to claim 1, wherein a single semiconductor substrate is provided with two types, one in which the beam axis of the vibrator is in the X-axis direction and one in which the beam axis is in the Y-axis direction, so that the rotational angular velocities of the X and Y axes can be measured. The vibration gyro sensor according to claim 1, wherein:
た誘起電流を駆動電流に正帰還させて、振動子をその共
振周波数で発振させることを特徴とする請求項１または
請求項２に記載の振動ジャイロセンサー。3. The oscillator according to claim 1, wherein the induced current generated in the conductor of the vibrator vibrating in the magnetic field is fed back to the drive current so that the vibrator oscillates at its resonance frequency. Vibration gyro sensor as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5292586A JP2886431B2 (en) | 1993-10-27 | 1993-10-27 | Vibrating gyro sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5292586A JP2886431B2 (en) | 1993-10-27 | 1993-10-27 | Vibrating gyro sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07120266A JPH07120266A (en) | 1995-05-12 |
| JP2886431B2 true JP2886431B2 (en) | 1999-04-26 |
Family
ID=17783695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5292586A Expired - Fee Related JP2886431B2 (en) | 1993-10-27 | 1993-10-27 | Vibrating gyro sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2886431B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19641284C1 (en) | 1996-10-07 | 1998-05-20 | Inst Mikro Und Informationstec | Rotation rate sensor with decoupled orthogonal primary and secondary vibrations |
| KR100442824B1 (en) * | 1997-05-12 | 2004-09-18 | 삼성전자주식회사 | A micromachine and a method for fabricating the same |
| DE19828424C1 (en) * | 1998-06-25 | 1999-12-02 | Litef Gmbh | Micromechanical revolution rate sensor base on the Coriolis principle |
| JP3811304B2 (en) | 1998-11-25 | 2006-08-16 | 株式会社日立製作所 | Displacement sensor and manufacturing method thereof |
| JP2005195574A (en) * | 2003-10-20 | 2005-07-21 | Sony Corp | Angular velocity detecting device, angular velocity detecting technique with angular velocity detecting device, and manufacturing method of angular velocity detecting device |
| DE112005002196B4 (en) * | 2004-09-27 | 2023-12-21 | Conti Temic Microelectronic Gmbh | Rotation rate sensor |
| JP2007114078A (en) * | 2005-10-21 | 2007-05-10 | Sony Corp | Drive unit and method for mems sensor, and active sensor using mems sensor |
| JP5247182B2 (en) | 2008-02-19 | 2013-07-24 | キヤノン株式会社 | Angular velocity sensor |
| DE102009000345A1 (en) | 2009-01-21 | 2010-07-22 | Robert Bosch Gmbh | Yaw rate sensor |
| JP2014041033A (en) * | 2012-08-22 | 2014-03-06 | Hitachi Automotive Systems Ltd | Inertial force sensor |
| US9429427B2 (en) * | 2012-12-19 | 2016-08-30 | Intel Corporation | Inductive inertial sensor architecture and fabrication in packaging build-up layers |
-
1993
- 1993-10-27 JP JP5292586A patent/JP2886431B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07120266A (en) | 1995-05-12 |
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