JP2881425B2 - Method for forming transparent conductive film - Google Patents
Method for forming transparent conductive filmInfo
- Publication number
- JP2881425B2 JP2881425B2 JP1198564A JP19856489A JP2881425B2 JP 2881425 B2 JP2881425 B2 JP 2881425B2 JP 1198564 A JP1198564 A JP 1198564A JP 19856489 A JP19856489 A JP 19856489A JP 2881425 B2 JP2881425 B2 JP 2881425B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- indium
- transparent conductive
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は液晶装置、光センサなどの各種電子部品デバ
イスに用いられる透明導電膜に関し、その形成方法を関
するものである。The present invention relates to a transparent conductive film used for various electronic component devices such as a liquid crystal device and an optical sensor, and relates to a method for forming the same.
透明導電膜は酸化インジウム錫（ITO）、酸化錫（SnO
2）または酸化インジウム（In2O3）などから成り、これ
らはスパッタリング法により成膜形成する。そして、所
要のパターニングを行って成膜形成する場合、インジウ
ム錫合金、錫金属又はインジウム金属のターゲット並び
に被成膜用基体を成膜室に配置し、アルゴンガスもしく
はアルゴン及び酸素の混合ガスをスパット用ガスとして
導入し、スパッタリングを行い、被成膜用基体の上に成
膜形成し、次いでフォトリスグラフ法により不要な膜を
エッチング除去する。The transparent conductive film is indium tin oxide (ITO), tin oxide (SnO
2 ) or indium oxide (In 2 O 3 ), and these are formed by sputtering. When forming a film by performing required patterning, an indium-tin alloy, a tin metal or an indium metal target and a substrate for film formation are arranged in a film forming chamber, and argon gas or a mixed gas of argon and oxygen is sputtered. The film is introduced as an application gas, sputtering is performed, a film is formed on the substrate on which the film is to be formed, and then an unnecessary film is removed by etching by a photolithographic method.
このようなスパッタリング法による成膜形成に当たっ
て、次の３通りの方法が提案されている。In forming a film by such a sputtering method, the following three methods have been proposed.
（ｉ）・・・150℃未満の基体温度で成膜する。(I) Film formation at a substrate temperature of less than 150 ° C.
（ii）・・・150℃未満の基体温度で成膜するのは
（ｉ）と同じであるが、エッチングを行った後、アニー
ルを行って膜自体の結晶化を高める。(Ii) ... Forming a film at a substrate temperature of less than 150 ° C. is the same as (i), but after etching, annealing is performed to enhance crystallization of the film itself.
（iii）・・・150℃以上の基体温度で成膜し、エッチン
グを行った後、アニールを行う。もしくは、そのエッチ
ングを行ってもアニールを行わない。(Iii) After forming a film at a substrate temperature of 150 ° C. or more, performing etching, and then performing annealing. Alternatively, annealing is not performed even if the etching is performed.
（ｉ）によれば、アニールがないために抵抗率５×10
-4Ω・cm以下の低抵抗化並びに波長550nmの光に対する
透過率が75％以上であるような高透過率化を困難にして
いる。According to (i), since there is no annealing, the resistivity is 5 × 10 5
This makes it difficult to reduce the resistance to -4 Ω · cm or less and to increase the transmittance to 75% or more for light having a wavelength of 550 nm.
（ii）においては、アニールにより低抵抗率化並びに
高透過率化となるが、エッチング性については未だ十分
満足し得ない。即ち、膜の結晶化が進んでいる場合には
エッチング速度の低下が認められたり、エッチング残渣
が生じ、また、あるエッチング液によってはエッチング
ができない場合もある。In the case of (ii), annealing lowers the resistivity and increases the transmittance, but the etching properties cannot be sufficiently satisfied. That is, when the crystallization of the film is progressing, a decrease in the etching rate is observed, an etching residue is generated, and etching may not be performed depending on a certain etching solution.
（iii）によれば、低抵抗率化並びに高透過率化の膜
が得られるが、その反面、基体温度が高く、そのために
膜の結晶化が促進し、上記（ｉ）（ii）に比べてエッチ
ング性が更に一層低下する。According to (iii), a film having a low resistivity and a high transmittance can be obtained, but on the other hand, the temperature of the substrate is high, which promotes the crystallization of the film. Thus, the etching property is further reduced.
従って本発明は上記事情に鑑みて案出されたものであ
り、その目的は低抵抗性及び高透過性並びに優れたエッ
チング性を達成した透明導電膜の形成方法を提供するこ
とにある。Accordingly, the present invention has been devised in view of the above circumstances, and an object of the present invention is to provide a method for forming a transparent conductive film which achieves low resistance, high transmittance, and excellent etching properties.
本発明に係る透明導電膜の形成方法は、酸化インジウ
ム錫、酸化錫または酸化インジウムのいずれかから成る
透明導電膜を被成膜用基体上に下記の順次Ａ工程乃至Ｃ
工程から成るスパッタリング法により形成したことを特
徴とする。In the method for forming a transparent conductive film according to the present invention, a transparent conductive film made of any of indium tin oxide, tin oxide and indium oxide is formed on a substrate for film formation by the following steps A to C in order.
It is formed by a sputtering method comprising a step.
Ａ工程・・・インジウム金属、錫金属またはインジウム
錫合金、酸化インジウム、酸化錫または酸化インジウム
錫から選ばれるターゲット並びに被成膜用基体を成膜室
に配置し、該成膜室にスパッタ用不活性ガス、水素ガス
及び酸素ガスを下記のガス比率で導入し、被成膜用基体
の上にスパッタリングにより成膜形成する。Step A: A target selected from indium metal, tin metal or indium tin alloy, indium oxide, tin oxide or indium tin oxide, and a substrate for film formation are arranged in a film formation chamber, and a sputtering target is placed in the film formation chamber. An active gas, a hydrogen gas, and an oxygen gas are introduced at the following gas ratios, and a film is formed on the substrate for film formation by sputtering.
スパッタ用不活性ガス、水素ガス及び酸素ガスのモル
比率をそれぞれ〔Ｘ〕、〔Ｈ〕及び〔Ｏ〕と表した場
合、 0.001≦〔Ｈ〕／〔Ｘ〕≦0.05 0＜〔Ｏ〕／〔Ｘ〕≦0.05 Ｂ工程・・・成膜体の不要な領域をフォトリソグラフ法
によりエッチング除去する。When the molar ratios of the inert gas for sputtering, hydrogen gas, and oxygen gas are represented by [X], [H] and [O], respectively, 0.001 ≦ [H] / [X] ≦ 0.050 <[O] / [ X] ≦ 0.05 Step B: Unnecessary regions of the film are etched away by photolithography.
Ｃ工程・・・成膜体を100乃至500℃の温度範囲内でアニ
ールする。Step C: The film is annealed in a temperature range of 100 to 500 ° C.
以下本発明を詳述する。 Hereinafter, the present invention will be described in detail.
本発明は上記の通り３工程から成り、Ａ工程において
は水素ガスを添加したことにより膜の結晶化を防ぎ、エ
ッチング性に良好となり、そして、酸素ガスを添加した
ことにより膜の透過率を高める。The present invention comprises three steps as described above. In the step A, the addition of hydrogen gas prevents crystallization of the film, improves the etching property, and increases the transmittance of the film by adding oxygen gas. .
その添加の比率については上記〔Ｈ〕／〔Ｘ〕が0.00
1乃至0.05、好適には0.005乃至0.03の範囲内であればよ
く、この比率が0.001未満の場合には良好なエッチング
性が得られず、0.05を越えた場合にはＣ工程後に得られ
た膜が高抵抗化及び低透過率化傾向を示す。Regarding the ratio of the addition, [H] / [X] is 0.00
1 to 0.05, preferably within the range of 0.005 to 0.03.If this ratio is less than 0.001, good etching properties cannot be obtained, and if it exceeds 0.05, the film obtained after the step C is obtained. Indicates a tendency toward higher resistance and lower transmittance.
また酸素ガスの添加比率については上記〔Ｏ〕／
〔Ｘ〕が０乃至0.05、好適には0.005乃至0.01の範囲内
であればよく、その比率が0.05を越えた場合にはＣ工程
後に得られた膜が高透過率が示すが、その反面、高抵抗
化となり、しかも、Ｂ工程におけるエッチング性が低下
する。As for the addition ratio of oxygen gas, the above [O] /
[X] may be in the range of 0 to 0.05, preferably 0.005 to 0.01, and when the ratio exceeds 0.05, the film obtained after the step C shows high transmittance, but on the other hand, The resistance is increased, and the etching property in the B step is reduced.
このようにＡ工程により得られた膜は良好なエッチン
グ性を示し、次のＢ工程により所要通りのフォトリソグ
ラフ法のエッチングを行う。As described above, the film obtained by the step A shows good etching properties, and the next step B performs etching by a photolithographic method as required.
然る後、Ｃ工程においてアニールを行い、これによっ
て膜の酸化並びに結晶化を行う。そのアニール温度を10
0乃至500℃、好適には200乃至400℃の範囲内に設定する
とよく、100℃未満では酸化及び結晶化がほとんど進行
せず、膜の低抵抗化及び高透過率化が達成できない。Thereafter, annealing is performed in the step C, thereby oxidizing and crystallizing the film. Set the annealing temperature to 10
The temperature should be set in the range of 0 to 500 ° C., preferably 200 to 400 ° C. If the temperature is lower than 100 ° C., oxidation and crystallization hardly progress, and it is impossible to achieve low resistance and high transmittance of the film.
一方、500℃を越えた場合には酸化が過度に進行し、
高抵抗化傾向が表れる。On the other hand, if the temperature exceeds 500 ° C, the oxidation proceeds excessively,
A tendency to increase resistance appears.
かくして本発明の形成方法によれば、上記Ａ乃至Ｃ工
程により良好なエッチング性並びに優れた低抵抗性及び
透過性の透明導電膜が得られた。Thus, according to the formation method of the present invention, a transparent conductive film having good etching properties and excellent low resistance and transparency was obtained by the above steps A to C.
以下本発明を実施例により詳述する。 Hereinafter, the present invention will be described in detail with reference to examples.
添付図面は日本真空技術（株）製DCマグネトロンスパ
ッタ装置（インラインSDP−300V）であり、この装置を
用いて酸化インジウム錫（以下、ITOと略す）の膜を形
成した場合を例にとる。The attached drawing is a DC magnetron sputtering apparatus (in-line SDP-300V) manufactured by Japan Vacuum Engineering Co., Ltd., and an example in which a film of indium tin oxide (hereinafter abbreviated as ITO) is formed using this apparatus.
同図中１はチャンバーであり、このチャンバー１の内
部ではアース側の電極板２並びに該板２の両主面にそれ
ぞれ配置した被成膜用基板３が一体となって成膜中矢印
Ａの方向に移動する。各々の基板３と相対向するように
それぞれ３個のターゲット４（いずれも同一組成の酸化
インジウム錫焼結体から成る板）が配置され、各ターゲ
ットはDC電源５に接続され、電極板２とターゲット４の
間に同一レベルのDC電圧が印加される。In FIG. 1, reference numeral 1 denotes a chamber. Inside the chamber 1, an electrode plate 2 on the earth side and a film-forming substrate 3 respectively disposed on both main surfaces of the plate 2 are integrally formed by an arrow A during film formation. Move in the direction. Three targets 4 (both plates made of indium tin oxide sintered body having the same composition) are arranged so as to face each substrate 3, and each target is connected to a DC power supply 5, The same level of DC voltage is applied between the targets 4.
６は水素ガス導入用の第１主管、７は酸素ガス及びア
ルゴンガスを導入するための第２主管であり、これらの
ガスは各主管に接続された流量調整器8,9を介して適当
な流速によりチャンバー１の内部に導入する。その導入
に際してはガス噴出口10,11を介してチャンバー内部に
吹き出される。Reference numeral 6 denotes a first main pipe for introducing a hydrogen gas, and 7 denotes a second main pipe for introducing an oxygen gas and an argon gas. These gases are supplied through appropriate flow controllers 8, 9 connected to the respective main pipes. It is introduced into the chamber 1 at a flow rate. At the time of introduction, the gas is blown into the chamber via the gas outlets 10 and 11.
そして、上記電圧印加系並びにガス導入系に基づき、
個々の基板３に対して３個の同一ターゲットを用いてス
パッタ成膜が行われ、基板２の上にITO膜が形成する。
この成膜形成に伴い生じた残余ガスはポンプ（図示せ
ず）により排気管12を介して流出する。尚、13,14はチ
ャンバー１を密閉するドアバルブである。And, based on the voltage application system and the gas introduction system,
Sputter deposition is performed on each of the substrates 3 using three identical targets, and an ITO film is formed on the substrate 2.
The residual gas generated during the film formation flows out through the exhaust pipe 12 by a pump (not shown). Reference numerals 13 and 14 denote door valves for closing the chamber 1.
本実施例においては下記に示す条件により膜厚1800Å
のITO膜を形成した。In this embodiment, the film thickness is 1800 Å under the following conditions.
An ITO film was formed.
ガス圧力・・・５×10-3Torr 電流 ・・・1.30A/各ターゲット 電圧 ・・・ 420V/各ターゲット 〔Ｈ〕／〔Ｘ〕・・・1.1％ 〔Ｏ〕／〔Ｘ〕・・・0.7％ このように得られたITO膜に対してＢ工程のエッチン
グを行ったところ、所要通りのエッチング性を示したこ
とを確認した。Gas pressure: 5 × 10 -3 Torr Current: 1.30 A / Target voltage: 420 V / Target [H] / [X]: 1.1% [O] / [X] 0.7% When the ITO film thus obtained was etched in the step B, it was confirmed that the ITO film had the required etching property.
次のＣ工程においては、300℃の温度で１時間アニー
ルを行った。In the next step C, annealing was performed at a temperature of 300 ° C. for 1 hour.
かくして本発明により形成したITO膜の比抵抗並びに
透過率を測定したところ、下記に示す通りの結果が得ら
れた。When the specific resistance and the transmittance of the ITO film formed according to the present invention were measured, the following results were obtained.
比抵抗……ρ＝3.3×10-4Ω・cm 透過率……波長450nmの光に対して70％ 波長550nmの光に対して80％ 本発明者等が繰り返し行った実験によれば、本発明の
形成方法においては、成膜条件に依存するが、５×10-4
Ω・cm以下の低い比抵抗並びに波長550nmの光に対して7
5％以上の高い透過率が得られることを確認した。Specific resistance: ρ = 3.3 × 10 −4 Ω · cm Transmittance: 70% for light with a wavelength of 450 nm 80% for light with a wavelength of 550 nm In the forming method of the present invention, although it depends on the film forming conditions, 5 × 10 -4
7 for low resistivity of Ωcm or less and light of wavelength 550nm
It was confirmed that a high transmittance of 5% or more was obtained.
また本発明者等は上記実施例の外にターゲットにイン
ジウム金属、錫金属、インジウム錫合金、酸化インジウ
ムまたは酸化錫を用いた場合でも同様な結果が得られる
ことを実験上確認した。In addition, the present inventors have experimentally confirmed that similar results can be obtained when indium metal, tin metal, indium tin alloy, indium oxide, or tin oxide is used as a target in addition to the above examples.
以上の通り、本発明の形成方法によれば、水素ガスや
酸素ガスなどのガスの流量を制御すれば、成膜室内部が
所要通りのガス雰囲気となり、このような安定した成膜
形成により優れた導電性と透過率並びに良好なエッチン
グ性である高品質且つ高信頼性の透明導電膜が得られ
た。As described above, according to the formation method of the present invention, if the flow rate of a gas such as a hydrogen gas or an oxygen gas is controlled, the inside of the film formation chamber becomes a required gas atmosphere, and such a stable film formation is excellent. As a result, a high-quality and highly reliable transparent conductive film having good conductivity, transmittance, and good etching properties was obtained.
また本発明によれば、良好なエッチング性の膜が得ら
れ、これにより、従来エッチング液として用いられてき
た高濃度の塩酸に比べて低濃度の硫酸系エッチング液を
用いることができ、その結果、エッチング液については
安全性並びにコスト面で有利となった。Further, according to the present invention, a film having a good etching property can be obtained, so that a sulfuric acid-based etching solution having a low concentration can be used as compared with a high-concentration hydrochloric acid conventionally used as an etching solution. In addition, the etching solution is advantageous in terms of safety and cost.
加えて、上記のような比較的エッチング性の弱いエッ
チング液を用いることができるため、Alなどの金属膜に
対するエッチングが極めて小さくなる。その結果、透明
導電膜及び金属膜を連続して成膜形成し、次いで金属膜
及び透明導電膜の順序でそれぞれに対して連続してエッ
チングすることができた。また従来の形成方法によれ
ば、スパッタ装置に基板加熱用設置が付けられ、基板自
体が高温加熱されるために取扱いが困難であり、ヒート
ショックにより基板がわれる場合もあった。しかしなが
ら、本発明によれば、基板の取扱いが容易であり、ヒー
トショックに弱いガラス板も用いることができる。In addition, since an etching solution having relatively low etching properties as described above can be used, etching of a metal film such as Al becomes extremely small. As a result, a transparent conductive film and a metal film were continuously formed, and then the metal film and the transparent conductive film were successively etched in this order. Further, according to the conventional forming method, the sputtering apparatus is provided with a substrate heating installation, and the substrate itself is heated at a high temperature, so that handling is difficult, and the substrate may be peeled off by heat shock. However, according to the present invention, the handling of the substrate is easy, and a glass plate which is weak against heat shock can be used.
添付図面は実施例に用いられたスパッタ装置の概略図で
ある。 １……チャンバー ２……電極板 ３……基板 ４……ターゲット ５……DC電源The attached drawings are schematic diagrams of the sputtering apparatus used in the embodiments. 1 ... chamber 2 ... electrode plate 3 ... substrate 4 ... target 5 ... DC power supply
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 14/00 - 14/58 H01B 13/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 6 , DB name) C23C 14/00-14/58 H01B 13/00
Claims (1)
ジウムのいずれかから成る透明導電膜を下記の順次Ａ工
程乃至Ｃ工程から成るスパッタリング法により被成膜用
基体上に形成したことを特徴とする透明導電膜の形成方
法。 Ａ工程・・・インジウム金属、錫金属、インジウム錫合
金、酸化インジウム、酸化錫または酸化インジウム錫か
ら選ばれるターゲット並びに被成膜用基体を成膜室に配
置し、該成膜室に酸素ガスをスパッタ用不活性ガスに対
し下記のガス比率で、かつ水素ガスを膜の結晶化が防止
されるようにスパッタ用不活性ガスに対し下記のガス比
率で導入し、被成膜用基体の上にスパッタリングにより
成膜形成する。 スパツタ用不活性ガス、水素ガス及び酸素ガスのモル比
率をそれぞれ〔Ｘ〕、〔Ｈ〕及び〔Ｏ〕と表した場合、 0.001≦〔Ｈ〕／〔Ｘ〕≦0.05 ０＜〔Ｏ〕／〔Ｘ〕≦0.05 Ｂ工程・・・成膜体の不要な領域をフォトリソグラフ法
によりエッチング除去する。 Ｃ工程・・・成膜体を100乃至500℃の温度範囲内でアニ
ールする。A transparent conductive film made of any one of indium tin oxide, tin oxide and indium oxide is formed on a substrate for film formation by a sputtering method comprising the following steps A to C in sequence. A method for forming a transparent conductive film. Step A: A target selected from indium metal, tin metal, indium tin alloy, indium oxide, tin oxide or indium tin oxide and a substrate for film formation are arranged in a film formation chamber, and oxygen gas is supplied to the film formation chamber. The following gas ratio with respect to the inert gas for sputtering, and the hydrogen gas is introduced at the following gas ratio with respect to the inert gas for sputtering so that crystallization of the film is prevented. A film is formed by sputtering. When the molar ratios of the spatter inert gas, hydrogen gas and oxygen gas are represented by [X], [H] and [O], respectively, 0.001 ≦ [H] / [X] ≦ 0.05 0 <[O] / [ X] ≦ 0.05 Step B: Unnecessary regions of the film are etched away by photolithography. Step C: The film is annealed in a temperature range of 100 to 500 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198564A JP2881425B2 (en) | 1989-07-31 | 1989-07-31 | Method for forming transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198564A JP2881425B2 (en) | 1989-07-31 | 1989-07-31 | Method for forming transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0364450A JPH0364450A (en) | 1991-03-19 |
| JP2881425B2 true JP2881425B2 (en) | 1999-04-12 |
Family
ID=16393281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1198564A Expired - Fee Related JP2881425B2 (en) | 1989-07-31 | 1989-07-31 | Method for forming transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2881425B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005076292A1 (en) * | 2004-02-09 | 2005-08-18 | Asahi Glass Company, Limited | Method for forming transparent electrode |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3512573B2 (en) * | 1996-08-28 | 2004-03-29 | 京セラ株式会社 | Display element manufacturing method |
| KR100323297B1 (en) * | 1998-05-15 | 2002-02-04 | 구마모토 마사히로 | Transparent conducting film |
| DE10023459A1 (en) * | 2000-05-12 | 2001-11-15 | Balzers Process Systems Gmbh | Depositing transparent conducting indium-tin oxide layers on substrate used in the production of transparent conducting electrodes in organic LED displays comprises using combined HF/DC sputtering of indium-tin oxide target |
| JP2002296609A (en) | 2001-03-29 | 2002-10-09 | Nec Corp | Liquid crystal display device and its manufacturing method |
| KR100505536B1 (en) | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
| TWI478347B (en) * | 2007-02-09 | 2015-03-21 | Idemitsu Kosan Co | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
| US20110194181A1 (en) * | 2008-10-17 | 2011-08-11 | Ulvac, Inc. | Film forming method for antireflection film, antireflection film, and film forming device |
| KR101603303B1 (en) * | 2008-10-31 | 2016-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Conductive oxynitride and method for manufacturing conductive oxynitride film |
| CN103031517A (en) * | 2011-10-09 | 2013-04-10 | 光洋应用材料科技股份有限公司 | ITO (indium tin oxide) film and manufacturing method thereof |
| JP2014095098A (en) * | 2012-11-07 | 2014-05-22 | Sumitomo Metal Mining Co Ltd | Transparent conductive film laminate, method of producing transparent conductive film laminate, thin-film solar cell and method of producing thin-film solar cell |
| JP2014095099A (en) * | 2012-11-07 | 2014-05-22 | Sumitomo Metal Mining Co Ltd | Transparent conductive film laminate, method of producing transparent conductive film laminate, thin-film solar cell and method of producing thin-film solar cell |
| WO2023214513A1 (en) * | 2022-05-06 | 2023-11-09 | 出光興産株式会社 | Method for producing crystalline indium oxide semiconductor film, thin-film transistor and sputtering target |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0723532B2 (en) * | 1986-03-28 | 1995-03-15 | 日本板硝子株式会社 | Method for forming transparent conductive film |
| JPS63103060A (en) * | 1986-10-20 | 1988-05-07 | Nippon Sheet Glass Co Ltd | Production of substrate with transparent electrode |
-
1989
- 1989-07-31 JP JP1198564A patent/JP2881425B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005076292A1 (en) * | 2004-02-09 | 2005-08-18 | Asahi Glass Company, Limited | Method for forming transparent electrode |
| CN1914695B (en) * | 2004-02-09 | 2010-05-05 | 旭硝子株式会社 | Method for forming transparent electrode |
| KR100968389B1 (en) * | 2004-02-09 | 2010-07-07 | 아사히 가라스 가부시키가이샤 | Method for forming transparent electrode |
| JP2011082178A (en) * | 2004-02-09 | 2011-04-21 | Asahi Glass Co Ltd | Method for forming transparent electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0364450A (en) | 1991-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2881425B2 (en) | Method for forming transparent conductive film | |
| US7037766B2 (en) | Method of fabricating an active matrix substrate for liquid crystal display utilizing interconnection lines formed from multilayered films that include an aluminum-neodymium alloy layer | |
| CN101542696B (en) | Al alloy film for display device, display device, and sputtering target | |
| EP0636702B1 (en) | Methods for producing functional films | |
| US4399015A (en) | Method for fabricating an indium tin oxide film for a transparent electrode | |
| JP2007017926A (en) | Display device | |
| JP2003016858A (en) | Manufacturing method of indium tin oxide film | |
| WO2007063991A1 (en) | Thin film transistor substrate and display device | |
| JP2912506B2 (en) | Method for forming transparent conductive film | |
| CN103911616B (en) | The preparation method of etching agent composition, the forming method of metal pattern and array base palte | |
| US4255474A (en) | Composite having transparent conductor pattern | |
| JPH06187833A (en) | Transparent conductive film | |
| JP3117446B2 (en) | Method for forming oxide conductive film | |
| US5989782A (en) | Method for producing liquid crystal display device | |
| JP3780100B2 (en) | Transparent conductive film with excellent processability | |
| JPH0742572B2 (en) | Transparent conductive film | |
| JPH0723532B2 (en) | Method for forming transparent conductive film | |
| JP3229610B2 (en) | Manufacturing method of ITO electrode | |
| KR20190002381A (en) | Etchant composition for Ag thin layer and method for fabricating metal pattern using the same | |
| JP4224661B2 (en) | Copper wiring board, manufacturing method thereof, and liquid crystal display device | |
| JP2003168571A (en) | Organic el element | |
| JP2000199912A (en) | Active matrix type liquid crystal display device and its production | |
| KR0169379B1 (en) | Gate electrode manufacturing method for al-hf alloy | |
| JPH0133006B2 (en) | ||
| KR880000448B1 (en) | Electronic conduction method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090205 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |