JP2857406B2 - Charged particle beam monitor - Google Patents
Charged particle beam monitorInfo
- Publication number
- JP2857406B2 JP2857406B2 JP5840989A JP5840989A JP2857406B2 JP 2857406 B2 JP2857406 B2 JP 2857406B2 JP 5840989 A JP5840989 A JP 5840989A JP 5840989 A JP5840989 A JP 5840989A JP 2857406 B2 JP2857406 B2 JP 2857406B2
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- fluorescent screen
- ceramic
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 title claims description 40
- 239000000919 ceramic Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、荷電粒子ビームモニタに関し、特に電子等
の荷電粒子ビームを直接遮るように挿入して、荷電粒子
ビームの在否、プロフィル等をモニタする型の荷電粒子
ビームモニタに関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam monitor, and in particular, to a charged particle beam such as an electron, which is inserted so as to directly block the charged particle beam to determine the presence / absence of the charged particle beam, a profile, and the like. The invention relates to a monitoring type charged particle beam monitor.
［従来の技術］ 電子顕微鏡、イオン注入装置、２次電子回折装置、電
子加速装置、電子蓄積リング装置（SOR）等の荷電粒子
を扱う装置において、電子等の荷電粒子のビームは一般
に加速装置や電子レンズ等と呼ばれる電磁的制御装置に
よってその経路やビーム形状を制御されている。実際の
運転操作において、電子ビーム等の荷電粒子ビームがど
こをどのように通っているかモニタする必要があるが、
荷電粒子ビームを目視ないしTVカメラ等で観察しようと
しても何も見えない。荷電粒子ビームを目視ないしTVカ
メラ等で観察しようとする場合は、荷電粒子ビームを発
光源に交換することが望ましい。[Prior art] In a device that handles charged particles such as an electron microscope, an ion implantation device, a secondary electron diffraction device, an electron accelerator, and an electron storage ring device (SOR), a beam of charged particles such as electrons is generally used in an accelerator or the like. The path and beam shape are controlled by an electromagnetic control device called an electronic lens or the like. In actual driving operation, it is necessary to monitor where and how a charged particle beam such as an electron beam passes,
Nothing can be seen when trying to observe the charged particle beam visually or with a TV camera. When the charged particle beam is to be observed visually or observed with a TV camera or the like, it is desirable to exchange the charged particle beam with a light emitting source.
従来、真空ダクト中の電子ビーム等の荷電粒子ビーム
をモニタする際、セラミクス螢光スクリーンに荷電粒子
ビームを当てて、発生する螢光をカメラ等で観測してビ
ーム形状を調べることが行われていた。荷電粒子ビーム
が螢光スクリーンに当ると、照射させている面積が発光
する。すなわち、螢光スクリーン上の発光部分が荷電粒
子ビームの存在する場所である。そこで、螢光スクリー
ン上でモニタしつつ荷電粒子ビームの位置、形状等を制
御装置を介して所定のものに調整して、所望の操作の準
備をする。Conventionally, when monitoring a charged particle beam such as an electron beam in a vacuum duct, the charged particle beam is applied to a ceramic fluorescent screen, and the generated fluorescence is observed with a camera or the like to examine the beam shape. Was. When the charged particle beam hits the fluorescent screen, the irradiated area emits light. That is, the light-emitting portion on the fluorescent screen is where the charged particle beam exists. Therefore, the position, the shape, and the like of the charged particle beam are adjusted to predetermined ones through the control device while monitoring on the fluorescent screen to prepare for a desired operation.
［発明が解決しようとする課題］ 上記の方法は、100MeV程度の高エネルギの電子に対し
て有効に使用されていたが、低エネルギの電子に対して
は旨く作用しなかった。[Problem to be Solved by the Invention] The above-mentioned method has been effectively used for high energy electrons of about 100 MeV, but did not work well for low energy electrons.
本発明の目的は、低エネルギの荷電粒子ビームも精度
良く直接検出することのできる荷電粒子ビームモニタを
提供することである。An object of the present invention is to provide a charged particle beam monitor capable of directly detecting a low energy charged particle beam with high accuracy.
［従来の技術の解析］ 第２図（Ａ）に、従来真空中の荷電粒子ビームモニタ
に用いていたセラミクス螢光スクリーンを示す。絶縁物
であるセラミクスで形成された螢光スクリーン11が金属
製のスクリーンホルダ13にマウントされている。スクリ
ーンホルダ13は、さらに支持具（図示せず）を介して接
地電位に接続されている。[Analysis of the Related Art] FIG. 2A shows a ceramic fluorescent screen conventionally used for a charged particle beam monitor in a vacuum. A fluorescent screen 11 made of ceramics, which is an insulator, is mounted on a metal screen holder 13. The screen holder 13 is further connected to a ground potential via a support (not shown).
このセラミクス螢光スクリーン11に荷電粒子ビーム15
が入射すると、螢光スクリーン11内の原子が励起され、
励起された原子が低いエネルギ状態に遷移する際に螢光
17を発生する。A charged particle beam 15 is applied to the ceramic fluorescent screen 11.
Is incident, the atoms in the fluorescent screen 11 are excited,
Fluorescence when excited atoms transition to lower energy states
Generates 17.
ところで、低エネルギの荷電粒子ビームに対して螢光
スクリーンが旨く作動しない理由は以下のように考えら
れる。By the way, the reason why the fluorescent screen does not work well for the low energy charged particle beam is considered as follows.
まず第２図（Ａ）を参照して、荷電粒子ビーム15は螢
光スクリーン11に衝突してエネルギと共に電荷を螢光ス
クリーン11に与える。電子ビームであれば負の電荷が螢
光スクリーン11の表面に与えられる。第２図（Ｂ）はこ
のように負の電荷21が与えられている状態のセラミクス
螢光スクリーン11を示す。絶縁体のセラミクスで形成さ
れた螢光スクリーン11上では電荷が移動し難く、入射電
子によって次第に蓄積電荷21が増加する。やがて、蓄積
電荷21の作る電界によって、入射電子15が反撥されてそ
の軌道を曲げるようになる。入射電子15が螢光スクリー
ン11を照射しなくなれば、当然螢光スクリーン11は発光
しなくなる。一旦蓄積した電荷21は容易に消滅しないの
で螢光スクリーン11は用をなさなくなる。これが低エネ
ルギ荷電粒子ビームに対して螢光スクリーンが旨く作動
しない理由と考えられる。First, referring to FIG. 2 (A), the charged particle beam 15 collides with the fluorescent screen 11 and gives a charge to the fluorescent screen 11 together with energy. In the case of an electron beam, a negative charge is applied to the surface of the fluorescent screen 11. FIG. 2 (B) shows the ceramics fluorescent screen 11 in the state where the negative charges 21 are thus provided. Electric charges are unlikely to move on the fluorescent screen 11 formed of insulator ceramics, and the accumulated electrons 21 gradually increase due to incident electrons. Eventually, the incident electrons 15 are repelled by the electric field created by the accumulated charges 21 and bend their orbits. When the incident electrons 15 no longer irradiate the fluorescent screen 11, the fluorescent screen 11 naturally does not emit light. Once the accumulated charges 21 do not disappear easily, the fluorescent screen 11 becomes useless. This is considered to be the reason that the fluorescent screen does not work well for the low energy charged particle beam.
入射電子のエネルギが十分高い時には、第２図（Ｃ）
に示すように、若干の反撥力を受けても入射電子15は螢
光スクリーン11に到達する。この入射電子15によって蓄
積電子21は増加する。ある程度蓄積電荷が大きくなる
と、蓄積された電子21同志が反撥し、一定量以上は蓄積
せずに外部に追い出すようになる。すなわち蓄積電荷に
上限が生じる。この上限の蓄積電荷が発揮する反撥力よ
りも強い力で入射する電子は螢光スクリーン11に到達す
るので螢光スクリーン11から発光が得られる。これが高
エネルギ荷電粒子ビームに対しては螢光スクリーン11が
旨く作動する理由と考えられる。When the energy of the incident electrons is sufficiently high, FIG.
As shown in (1), the incident electrons 15 reach the fluorescent screen 11 even if they receive a slight repulsive force. The stored electrons 21 increase due to the incident electrons 15. When the accumulated charge becomes large to some extent, the accumulated electrons 21 repel each other, and drive out to the outside without accumulating a certain amount or more. That is, there is an upper limit on the accumulated charge. Electrons that enter with a stronger force than the repulsion exerted by the upper limit of the accumulated charges reach the fluorescent screen 11, so that light is emitted from the fluorescent screen 11. This is considered to be the reason that the fluorescent screen 11 works well for the high energy charged particle beam.
［課題を解決するための手段］ 絶縁性セラミクスの螢光スクリーンの表面上に導電層
を形成し、金属製ホルダに電気的に接続させる。[Means for Solving the Problems] A conductive layer is formed on the surface of a fluorescent screen made of insulating ceramics, and is electrically connected to a metal holder.
第１図（Ａ）に本発明の基本構成を示す。セラミクス
の螢光スクリーン１の表面に導電層２が形成されてお
り、金属製のホルダ３がこの導電層２と接触して電気的
接触を形成している。導電層２の厚さは、電子ビーム等
の入射荷電粒子ビーム５が導電層２を通過してセラミク
ス螢光スクリーン１に到達し、かつセラミクス螢光スク
リーン１で発生した光７が導電層２を通過して外部へ取
り出せるように選ぶ。FIG. 1A shows a basic configuration of the present invention. A conductive layer 2 is formed on the surface of a fluorescent screen 1 made of ceramics, and a metal holder 3 contacts the conductive layer 2 to form an electrical contact. The thickness of the conductive layer 2 is such that an incident charged particle beam 5 such as an electron beam passes through the conductive layer 2 and reaches the ceramic fluorescent screen 1, and the light 7 generated by the ceramic fluorescent screen 1 causes the conductive layer 2 to pass through the conductive layer 2. Choose so that you can pass through and take it out.
［作用］ セラミクス螢光スクリーン１の入射面上に導電層２が
存在し、金属製ホルダ３に電気的に接続されているの
で、荷電粒子ビーム５がセラミクス螢光スクリーン１に
入射して電荷を与えても、その電荷は導電層２を介して
金属製ホルダ３に放電する。このため、電荷の蓄積が防
止され、セラミクス螢光スクリーン１が機能を損なうこ
とが防止される。[Operation] Since the conductive layer 2 is present on the incident surface of the ceramic fluorescent screen 1 and is electrically connected to the metal holder 3, the charged particle beam 5 is incident on the ceramic fluorescent screen 1 to generate electric charges. Even if applied, the charge is discharged to the metal holder 3 via the conductive layer 2. Therefore, accumulation of electric charge is prevented, and the function of the ceramic fluorescent screen 1 is prevented from being impaired.
さらに、第１図（Ｂ）に示すように、入射荷電粒子ビ
ーム５が導電層２中で２次電子を発生させる。これらの
２次電子もセラミクス螢光スクリーン１を照射して、螢
光を発光させる。このため、高い輝度を得易い。Further, as shown in FIG. 1 (B), the incident charged particle beam 5 generates secondary electrons in the conductive layer 2. These secondary electrons also irradiate the ceramic fluorescent screen 1 to emit fluorescent light. Therefore, it is easy to obtain high luminance.
［実施例］ 第３図（Ａ）、（Ｂ）に本発明の実施例による電子ビ
ームモニタ装置を示す。Embodiment FIGS. 3A and 3B show an electron beam monitoring apparatus according to an embodiment of the present invention.
電子ビームダクト31は電子加速器と電子ビーム利用装
置とを接続して電子ビームを通過させるための通路を構
成している。この電子ビームダクト31の中間に電子ビー
ムモニタ箱33が設けられており、電子ビーム５が所定の
位置を所定のビーム形状で通過しているかをモニタす
る。電子ビームモニタ箱33の上面には両端にフランジ35
a、35bを接続したベローズ37が取付けられており、ベロ
ーズ上部のフランジ部35bにはフランジ39が係合し、こ
こに把手41が取付けられている。この把手41には支持棒
43を介してセラミクス螢光スクリーン１のホルダ３が取
り付けてある。The electron beam duct 31 connects the electron accelerator and the electron beam utilization device and forms a passage for passing an electron beam. An electron beam monitor box 33 is provided in the middle of the electron beam duct 31, and monitors whether the electron beam 5 has passed a predetermined position in a predetermined beam shape. The upper surface of the electron beam monitor box 33 has flanges 35 at both ends.
A bellows 37 connecting a and 35b is mounted, and a flange 39 is engaged with a flange portion 35b at an upper portion of the bellows, and a handle 41 is mounted here. This handle 41 has a support bar
The holder 3 of the ceramic fluorescent screen 1 is attached via 43.
第３図（Ｂ）も参照して、ホルダ３は背板3aと押え板
3bを有し、共に金属製である。背板3aの上に表面（入射
面）に金属層２を形成したセラミクス螢光スクリーン１
を載置し、上から押え板3bで押えてビス止めしている。
金属層２の代りに導電性を有する多結晶シリコン等の導
電層を用いてもよい。Referring also to FIG. 3 (B), the holder 3 includes a back plate 3a and a holding plate.
3b, both made of metal. Ceramic fluorescent screen 1 having metal layer 2 formed on the surface (incident surface) on back plate 3a
Is placed and pressed from above with the presser plate 3b and screwed.
Instead of the metal layer 2, a conductive layer such as polycrystalline silicon having conductivity may be used.
第３図（Ａ）に戻って、把手41を押し下げ電子ビーム
５が金属層２を備えたセラミクス螢光スクリーン１に当
るようにする。電子ビーム５を照射されて発光している
領域をTVカメラ等の撮像装置47で観察する。もちろん目
視用の窓等を設けてもよい。電子ビームダクト31、電子
ビームモニタ箱33、ベローズ35a、35b、37、フランジ3
9、把手41、支持棒43はステンレス等の必要な強度を持
ち、アウトガスの少ない金属で作る。金属製ホルダ3a、
3bも特に制限されないが、ステンレス等の導電性を持つ
金属で作れる。セラミクス螢光スクリーン１は例えばCr
を数％含有させたAl2O3で形成できる。セラミクス螢光
スクリーン１上の金属層２は必要な強度と、導電性、電
子透過性、螢光透過性を持つものであり、例えばAuの蒸
着膜で形成できる。条件を満たせば他の金属を使うこと
もできる。金属層２の厚さは、例えばAu層の場合10μg/
cm2程度でよい。Returning to FIG. 3 (A), the handle 41 is depressed so that the electron beam 5 hits the ceramic fluorescent screen 1 provided with the metal layer 2. An area where the electron beam 5 is emitted and emitted is observed by an imaging device 47 such as a TV camera. Of course, a window or the like for visual observation may be provided. Electron beam duct 31, electron beam monitor box 33, bellows 35a, 35b, 37, flange 3
9. The handle 41 and the support rod 43 are made of a metal having a necessary strength such as stainless steel and a small amount of outgas. Metal holder 3a,
3b is not particularly limited, but can be made of a conductive metal such as stainless steel. The ceramic fluorescent screen 1 is made of, for example, Cr.
Of Al 2 O 3 containing several% of The metal layer 2 on the ceramic fluorescent screen 1 has the required strength, conductivity, electron transparency, and fluorescence transparency, and can be formed by, for example, a vapor deposition film of Au. Other metals can be used if conditions are met. The thickness of the metal layer 2 is, for example, 10 μg /
cm 2 may be sufficient.
［発明の効果］ 絶縁性のセラミクス螢光スクリーンに金属層を形成し
たことにより、セラミクス螢光スクリーンの帯電が防止
できる。[Effects of the Invention] By forming a metal layer on an insulating ceramic fluorescent screen, charging of the ceramic fluorescent screen can be prevented.
このため、従来セラミクス螢光スクリーンではモニタ
し難かった低エネルギ荷電粒子ビームも明瞭にモニタで
きる。Therefore, a low-energy charged particle beam, which has been difficult to monitor with a conventional ceramic fluorescent screen, can be clearly monitored.
さらに荷電粒子ビームが金属層に当ったときに２次電
子を発生させ、この２次電子も螢光発生に寄与するの
で、全体として大きな輝度を得ることができる。Furthermore, secondary electrons are generated when the charged particle beam hits the metal layer, and the secondary electrons also contribute to the generation of fluorescence, so that a large luminance can be obtained as a whole.
第１図（Ａ）、（Ｂ）は本発明の原理説明図、 第２図（Ａ）、（Ｂ）、（Ｃ）は従来技術の解析を説明
するための模式図、 第３図（Ａ）、（Ｂ）は本発明の実施例による電子ビー
ムモニタ装置の斜視図と部分拡大図である。 図において、 １……セラミクス螢光スクリーン ２……導電層 ３……金属製ホルダ ５……入射荷電粒子 ７……螢光 11……セラミクス螢光スクリーン 13……金属製ホルダ 15……入射荷電粒子ビーム 17……螢光 31……電子ビームダクト 33……電子ビームモニタ箱 35a、35b……フランジ 37……ベローズ 39……フランジ 41……把手 43……支持棒 47……撮像装置FIGS. 1 (A) and 1 (B) are explanatory diagrams of the principle of the present invention, FIGS. 2 (A), (B) and (C) are schematic diagrams for explaining the analysis of the prior art, and FIG. 3 (A). 3A and 3B are a perspective view and a partially enlarged view of an electron beam monitoring device according to an embodiment of the present invention. In the figure, 1 ... ceramic fluorescent screen 2 ... conductive layer 3 ... metal holder 5 ... incident charged particles 7 ... fluorescence 11 ... ceramics fluorescent screen 13 ... metal holder 15 ... incident charge Particle beam 17 Fluorescence 31 Electron beam duct 33 Electron beam monitor box 35a, 35b Flange 37 Bellows 39 Flange 41 Handle 43 Support rod 47 Imaging device
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01J 37/04 H01J 37/244 H01J 37/22 G01T 1/29──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01J 37/04 H01J 37/244 H01J 37/22 G01T 1/29
Claims (1)
能に配置される荷電粒子ビームモニタであって、 金属製のホルダ（３）と、 金属製のホルダ（３）に装架されたセラミクスの螢光ス
クリーン（１）と、 セラミクス螢光スクリーン（１）表面上に形成され、金
属製ホルダに電気的に接続された金属層（２）であっ
て、（Ａ）前記セラミクス螢光スクリーン（１）の荷電
粒子ビーム入射面全面を覆うように形成され、（Ｂ）荷
電粒子ビームが透過し、かつセラミクス螢光スクリーン
（１）で発光した螢光が透過できる厚さを有し、（Ｃ）
荷電粒子ビームにより２次電子を発生させる金属層
（２）と を有し、荷電粒子ビーム入射側から螢光によって荷電粒
子ビームをモニタする荷電粒子ビームモニタ。1. A charged particle beam monitor arranged in a vacuum vessel so as to be inserted into a charged particle beam path, comprising: a metal holder (3); and a ceramic mounted on the metal holder (3). A fluorescent screen (1), and a metal layer (2) formed on the surface of the ceramic fluorescent screen (1) and electrically connected to a metal holder, wherein (A) the ceramic fluorescent screen ( (C) is formed so as to cover the entire surface of the charged particle beam incident surface of (1), and has a thickness capable of transmitting the charged particle beam and transmitting the fluorescent light emitted from the ceramic fluorescent screen (1); )
A metal layer (2) for generating secondary electrons by the charged particle beam; and a charged particle beam monitor for monitoring the charged particle beam by fluorescence from the charged particle beam incident side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5840989A JP2857406B2 (en) | 1989-03-10 | 1989-03-10 | Charged particle beam monitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5840989A JP2857406B2 (en) | 1989-03-10 | 1989-03-10 | Charged particle beam monitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02239561A JPH02239561A (en) | 1990-09-21 |
| JP2857406B2 true JP2857406B2 (en) | 1999-02-17 |
Family
ID=13083571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5840989A Expired - Lifetime JP2857406B2 (en) | 1989-03-10 | 1989-03-10 | Charged particle beam monitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2857406B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3248323B2 (en) * | 1993-12-08 | 2002-01-21 | 石川島播磨重工業株式会社 | Particle accelerator beam monitor |
| DE19900346A1 (en) * | 1999-01-07 | 2000-07-13 | Europ Lab Molekularbiolog | Precision sample turning device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6188441A (en) * | 1984-10-05 | 1986-05-06 | Hitachi Ltd | Fluorescent panel for electron microscope or the like |
| JPS61142030A (en) * | 1984-12-14 | 1986-06-28 | Ideal:Kk | Grommet punching apparatus |
| JPH0668559B2 (en) * | 1987-01-21 | 1994-08-31 | 富士写真フイルム株式会社 | Radiation sensitization screen |
| JPS63222288A (en) * | 1987-03-11 | 1988-09-16 | Mitsubishi Electric Corp | Phosphor plate monitoring |
-
1989
- 1989-03-10 JP JP5840989A patent/JP2857406B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02239561A (en) | 1990-09-21 |
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