JP2831219B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2831219B2 JP2831219B2 JP4342992A JP34299292A JP2831219B2 JP 2831219 B2 JP2831219 B2 JP 2831219B2 JP 4342992 A JP4342992 A JP 4342992A JP 34299292 A JP34299292 A JP 34299292A JP 2831219 B2 JP2831219 B2 JP 2831219B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- weight
- base
- insulating frame
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体素子収納用パッケ
ージ内に半導体素子を収容して成る半導体装置の改良に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device in which a semiconductor element is housed in a semiconductor element housing package.
【0002】[0002]
【従来の技術】従来、コンピュータ等の情報処理装置に
は半導体素子を半導体素子収納用パッケージ内に気密に
収容した半導体装置が使用されている。2. Description of the Related Art Conventionally, a semiconductor device in which a semiconductor element is hermetically housed in a semiconductor element housing package is used for an information processing apparatus such as a computer.
【0003】かかる情報処理装置に使用される半導体装
置は通常、まずアルミナセラミックス等の電気絶縁材料
から成り、その上面略中央部に半導体素子が搭載される
搭載部を有する絶縁基体と、同じく電気絶縁材料から成
り、前記絶縁基体の半導体素子搭載部を囲繞するように
中央部に開口を有する絶縁枠体と、内部に収容する半導
体素子を外部電気回路に電気的に接続するための複数個
の外部リード端子とから構成される半導体素子収納用パ
ッケージを準備し、絶縁基体の上面に外部リード端子及
び絶縁枠体を順次載置させ、各々をエポキシ樹脂等の樹
脂製接着剤で接着固定するとともに絶縁枠体の開口内に
位置する絶縁基体の半導体素子搭載部に半導体素子を固
定し、しかる後、前記半導体素子の各電極をボンディン
グワイヤを介して外部リード端子に接続させるとともに
絶縁枠体の開口内にエポキシ樹脂等の充填剤を充填し、
半導体素子を気密に封止することによって半導体装置と
なる。A semiconductor device used in such an information processing apparatus is generally made of an electrically insulating material such as alumina ceramics, and has an insulating base having a mounting portion on which a semiconductor element is mounted at a substantially central portion of the upper surface thereof. An insulating frame body made of a material and having an opening at a central portion so as to surround the semiconductor element mounting portion of the insulating base; and a plurality of external frames for electrically connecting the semiconductor element housed therein to an external electric circuit. Prepare a package for housing semiconductor elements composed of lead terminals and external lead terminals and an insulating frame are sequentially placed on the upper surface of the insulating base, and each is bonded and fixed with a resin adhesive such as epoxy resin and insulated. The semiconductor element is fixed to the semiconductor element mounting portion of the insulating base located in the opening of the frame, and thereafter, each electrode of the semiconductor element is connected via a bonding wire. Part filled with filler such as an epoxy resin with is connected to a lead terminal in the opening of the insulating frame member,
A semiconductor device is obtained by hermetically sealing a semiconductor element.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、近時、
半導体素子は高密度化、高集積化が急激に進み、半導体
素子の単位面積、単位体積あたりの発熱量が急増してき
ていること、半導体素子収納用パッケージの絶縁基体及
び半導体素子を気密に封止する樹脂製充填剤が各々、ア
ルミナセラミックスやエポキシ樹脂等から成り、いずれ
も熱伝導性が悪く、熱を伝え難いこと等から半導体素子
が作動時に多量の熱を発すると該熱は半導体素子周辺の
絶縁基体や樹脂製充填剤に蓄積されて半導体素子を高温
となし、その結果、半導体素子が該素子自身の発する熱
によって熱破壊したり、特性に熱変化を来し誤動作した
りするという欠点を有していた。However, recently,
Semiconductor devices are rapidly increasing in density and integration, and the amount of heat generated per unit area and unit volume of semiconductor devices is increasing rapidly. The insulating base of semiconductor device storage package and semiconductor devices are hermetically sealed. Each of the resin fillers is made of alumina ceramics, epoxy resin, etc., all of which have poor thermal conductivity and are difficult to conduct heat. The disadvantage is that the semiconductor element is heated to a high temperature by being accumulated in the insulating base or the resin filler, and as a result, the semiconductor element is thermally destroyed by the heat generated by the element itself, or the characteristics are changed by heat and a malfunction is caused. Had.
【0005】[0005]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は半導体素子の発する熱を大気中に良好に
放散させ、半導体素子を常に低温として長期間にわたり
正常、且つ安定に作動させることができる半導体装置を
提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to dissipate the heat generated by a semiconductor element to the atmosphere satisfactorily and to keep the semiconductor element at a low temperature in a normal and stable manner for a long period of time. It is to provide a semiconductor device which can be operated.
【0006】本発明は、基体上に複数個の外部リード端
子と開口を有する絶縁枠体とを接着剤を介して順次、取
着し、前記絶縁枠体の開口内に半導体素子を収容すると
ともに該半導体素子を絶縁枠体の開口内に充填させた樹
脂製充填剤で気密に封止して成る半導体装置であって、
前記接着剤はエポキシ樹脂100重量部に対し、粒径1
乃至50μmのシリカ粉末を200乃至400重量部、
粒径0.5μm以下のシリカ粉末を1.5乃至15重量
部添加したもので形成されており、かつ前記基体は鉄系
合金から成る板状体の上下に、アルミニウム板を接合さ
せた複合金属体で形成されていることを特徴とするもの
である。According to the present invention, a plurality of external lead terminals and an insulating frame having an opening are sequentially attached to a base via an adhesive, and a semiconductor element is accommodated in the opening of the insulating frame. A semiconductor device in which the semiconductor element is hermetically sealed with a resin filler filled in an opening of an insulating frame,
The adhesive has a particle size of 1 to 100 parts by weight of epoxy resin.
200 to 400 parts by weight of silica powder of 50 to 50 μm,
A composite metal formed by adding 1.5 to 15 parts by weight of silica powder having a particle size of 0.5 μm or less, and wherein the base is formed by bonding an aluminum plate to upper and lower surfaces of a plate made of an iron-based alloy; It is characterized by being formed of a body.
【0007】[0007]
【実施例】次ぎに本発明を添付図面に基づき詳細に説明
する。図1は本発明の半導体装置の一実施例を示し、1
は基体、2は絶縁枠体である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 shows an embodiment of a semiconductor device according to the present invention.
Denotes a base, and 2 denotes an insulating frame.
【0008】前記基体1はその上面の略中央部に半導体
素子3 を搭載するための搭載部1cを有し、該搭載部1cに
半導体素子3 が樹脂等から成る接着剤を介して接着固定
される。The base 1 has a mounting portion 1c for mounting the semiconductor element 3 substantially at the center of the upper surface thereof. The semiconductor element 3 is bonded and fixed to the mounting portion 1c via an adhesive made of resin or the like. You.
【0009】前記基体1 はコバール金属、42アロイ、
インバー合金等の鉄系合金から成る板状体1aの上下に、
アルミニウム板1bを接合させた複合金属体から成り、該
複合金属体は熱伝導率が50W/m ・K 以上で、熱を伝え
易いことから半導体素子3 が作動時に多量の熱を発した
としてもその熱は基体1 が良好に吸収するとともに大気
中に放散させ、半導体素子3 を常に低温として半導体素
子3 を長期間にわたり正常、且つ安定に作動させること
が可能となる。The substrate 1 is made of Kovar metal, 42 alloy,
Above and below the plate-shaped body 1a made of an iron-based alloy such as Invar alloy,
It is composed of a composite metal body to which an aluminum plate 1b is joined. The composite metal body has a thermal conductivity of 50 W / mK or more and is easy to conduct heat. Therefore, even if the semiconductor element 3 generates a large amount of heat during operation, The heat is well absorbed by the base 1 and dissipated into the atmosphere, so that the semiconductor element 3 is always kept at a low temperature so that the semiconductor element 3 can operate normally and stably for a long period of time.
【0010】また前記複合金属体から成る基体1は鉄系
合金から成る板状体1aの上下に、アルミニウム板1bが接
合されていることから鉄系合金から成る板状体1aとアル
ミニウム板1bとの間に発生する両者の熱膨張係数の相違
に起因する熱応力はその上下面で相殺されることとな
り、その結果、基体1を平坦として基体1の上面に半導
体素子3を密着性よく接着することができ、半導体素子
3の発する熱を基体1に良好に吸収させることもでき
る。The base 1 made of the composite metal body is composed of a plate 1a made of an iron-based alloy and an aluminum plate 1b. The thermal stress generated due to the difference in the thermal expansion coefficient between the two is canceled on the upper and lower surfaces, and as a result, the substrate 1 is flattened and the semiconductor element 3 is adhered to the upper surface of the substrate 1 with good adhesion. The heat generated by the semiconductor element 3 can be favorably absorbed by the base 1.
【0011】尚、前記複合金属体から成る基体1は例え
ば、コバール金属等の鉄系合金から成る板状体1aの上下
に、アルミニウム板1bを載置させ、しかる後、これを圧
延ローラにより150Kg/cm2 以上の圧力で押圧することに
よって製作される。The base 1 made of the composite metal body is, for example, an aluminum plate 1b placed on and under a plate 1a made of an iron-based alloy such as Kovar metal. It is manufactured by pressing with a pressure of / cm 2 or more.
【0012】また前記複合金属体から成る基体1は、鉄
系合金から成る板状体1aの厚みaに対するアルミニウム
板1bの厚みbが4.5 <b/aであると基体1 の熱膨張係
数が半導体素子3 の熱膨張係数と大きく相違することに
なって半導体素子3 を基体1上に強固に接着させるのが
困難となり、またb/a<0.2 であると基体1 の熱伝導
率が小さく成り、半導体素子3 の作動時に発する熱を大
気中に良好に放散させるのが困難となる。従って、前記
基体1 は板状体1aの厚みaに対するアルミニウム板1bの
厚みbを4.5 ≧b/a≧0.2 とすることが好ましい。When the thickness b of the aluminum plate 1b with respect to the thickness a of the plate-like body 1a made of an iron-based alloy is 4.5 <b / a, the coefficient of thermal expansion of the Since the coefficient of thermal expansion of the element 3 is greatly different from that of the element 3, it is difficult to firmly adhere the semiconductor element 3 on the base 1. If b / a <0.2, the thermal conductivity of the base 1 becomes small. It becomes difficult to satisfactorily dissipate the heat generated during operation of the semiconductor element 3 into the atmosphere. Accordingly, it is preferable that the thickness b of the aluminum plate 1b relative to the thickness a of the plate-like body 1a is set to 4.5 ≧ b / a ≧ 0.2.
【0013】前記基体1 の上面にはまた外部リード端子
4 を間に挟んで絶縁枠体2 が樹脂性接着剤5 を介して接
着固定されている。External lead terminals are also provided on the upper surface of the base 1.
The insulating frame 2 is bonded and fixed via a resinous adhesive 5 with 4 interposed therebetween.
【0014】前記絶縁枠体2 はその中央部に開口A が形
成されており、基体1 の半導体素子3 が搭載される搭載
部1cを囲繞するような枠状となっている。この絶縁枠体
2 はその中央部の開口A と基体1 の上面とで半導体素子
3 を内部に収容するための空所を形成し、基体1 の半導
体素子搭載部1c上に半導体素子3 をガラス、樹脂等の接
着剤を介して接着固定すれば半導体素子3 は絶縁枠体2
の開口A 内に収容されることとなる。The insulating frame 2 has an opening A at the center thereof, and has a frame shape surrounding the mounting portion 1c of the base 1 on which the semiconductor element 3 is mounted. This insulation frame
2 is the semiconductor element between the opening A at the center and the upper surface of the base 1.
A space for accommodating the semiconductor element 3 therein is formed, and the semiconductor element 3 is bonded and fixed on the semiconductor element mounting portion 1c of the base 1 with an adhesive such as glass, resin, or the like.
In the opening A.
【0015】前記絶縁枠体2 は酸化アルミニウム質焼結
体等の電気絶縁材料から成り、アルミナ(Al 2 O 3 ) 、
シリカ(SiO2 ) 、カルシア(CaO) 、マグネシア(MgO) 等
に適当な有機溶剤、溶媒を添加混合して原料粉末を調整
し、次ぎに前記原料粉末を所定形状の金型内に充填する
とともにこれを一定圧力で押圧して形成品を得、しかる
後、前記成形品を約1600℃の温度で焼成することによっ
て製作される。The insulating frame 2 is made of an electrically insulating material such as an aluminum oxide sintered body, and is made of alumina (Al 2 O 3 ),
A suitable organic solvent and a solvent are added to silica (SiO 2 ), calcia (CaO), magnesia (MgO) and the like to prepare a raw material powder, and then the raw material powder is filled into a mold having a predetermined shape. This is pressed at a constant pressure to obtain a formed article, and then manufactured by firing the formed article at a temperature of about 1600 ° C.
【0016】前記基体1 と絶縁枠体2 との間にはまた外
部リード端子4 が挟持されており、該外部リード端子4
の一端には半導体素子3 の各電極がボンディングワイヤ
6 を介して電気的に接続され、また他端側には半田等の
ロウ材を介し外部電気回路に電気的に接続される。An external lead terminal 4 is also sandwiched between the base 1 and the insulating frame 2.
Each electrode of the semiconductor element 3 has a bonding wire at one end
6 and the other end is electrically connected to an external electric circuit via a brazing material such as solder.
【0017】前記外部リード端子4 はコバール金属( 鉄
ーニッケルーコバルト合金) 、42アロイ(鉄ーニッケ
ル合金)等の鉄合金や、銅、ニッケル、珪素、亜鉛等か
ら成る銅合金から成り、例えばコバール金属のインゴッ
ト(塊)を圧延加工法や打ち抜き加工法等、従来周知の
金属加工法を採用することによって所定の板状に形成さ
れる。The external lead terminal 4 is made of an iron alloy such as Kovar metal (iron-nickel-cobalt alloy) or 42 alloy (iron-nickel alloy), or a copper alloy made of copper, nickel, silicon, zinc, or the like. A metal ingot is formed into a predetermined plate shape by employing a conventionally known metal working method such as a rolling method or a punching method.
【0018】尚、前記外部リード端子4はその表面に
銀、アルミニウム等をメッキ法や蒸着法、クラッド法に
より0.5 乃至20.0μmの厚みに被着させておくと、外部
リード端子4 にボンディングワイヤ6 を接合させる際、
その接合を極めて強固となすことができる。従って、前
記外部リード端子4 はその表面に銀、アルミニウム等を
0.5 乃至20.0μm の厚みに被着させておくことか好まし
い。When the external lead terminal 4 is coated with silver, aluminum or the like to a thickness of 0.5 to 20.0 μm on its surface by plating, vapor deposition, or cladding, a bonding wire 6 is attached to the external lead terminal 4. When joining
The joining can be made very strong. Therefore, the external lead terminal 4 has silver, aluminum, etc. on its surface.
Preferably, it is applied to a thickness of 0.5 to 20.0 μm.
【0019】また前記外部リード端子4は基体1及び絶
縁枠体2に樹脂製接着剤5を介して接着固定されてお
り、該樹脂製接着剤5はビスフェノールA型エポキシ樹
脂60乃至80重量%とノボラック型エポキシ樹脂20
乃至40重量%から成るエポキシ樹脂100重量部に対
し、粒径1乃至50μmのシリカ粉末を200乃至40
0重量部、粒径0.5μm以下のシリカ粉末を1.5乃
至15重量部、イミダゾール系硬化剤を10乃至40重
量部添加したもので形成されている。このエポキシ樹脂
の内部に粒径1乃至50μmのシリカ粉末を200乃至
400重量部、粒径0.5μm以下のシリカ粉末を1.
5乃至15重量部添加させて形成される樹脂製接着剤5
はその熱膨張係数が基体1、絶縁枠体2及び外部リード
端子4の熱膨張係数に近似し、基体1と絶縁枠体2と外
部リード端子4とを極めて強固に接着することが可能と
なるとともに樹脂製接着剤5の耐湿性を大きく向上さ
せ、樹脂製接着剤5を介して外部から半導体素子3を収
容する内部に水分が入り込むのを阻止し、半導体素子3
の電極等に水分付着による酸化腐蝕が発生するのを有効
に防止することができる。The external lead terminals 4 are bonded and fixed to the base 1 and the insulating frame 2 via a resin adhesive 5. The resin adhesive 5 is a bisphenol A type epoxy resin of 60 to 80% by weight. Novolak type epoxy resin 20
Silica powder having a particle size of 1 to 50 μm is added in an amount of 200 to 40 parts by weight with respect to 100 parts by weight of an epoxy resin consisting of
It is formed by adding 1.5 to 15 parts by weight of silica powder having a particle size of 0.5 μm or less, and 10 to 40 parts by weight of an imidazole-based curing agent. Inside the epoxy resin, 200 to 400 parts by weight of silica powder having a particle size of 1 to 50 μm and silica powder having a particle size of 0.5 μm or less are used.
Resin adhesive 5 formed by adding 5 to 15 parts by weight
Has a coefficient of thermal expansion close to the coefficients of thermal expansion of the base 1, the insulating frame 2 and the external lead terminals 4, so that the base 1, the insulating frame 2 and the external lead terminals 4 can be bonded very firmly. At the same time, the moisture resistance of the resin adhesive 5 is greatly improved, and moisture is prevented from entering the interior of the semiconductor element 3 from the outside via the resin adhesive 5, and
Oxidation and corrosion due to adhesion of water to the electrodes and the like can be effectively prevented.
【0020】前記樹脂製接着剤5 を介して基体1 と絶縁
枠体2 との間に外部リード端子4 を接着させるには、ま
ず、基体1 の上面外周部にビスフェノールA型エポキシ
樹脂60乃至80重量%とノボラック型エポキシ樹脂20乃至
40重量%から成るエポキシ樹脂100 重量部に対し、粒径
1乃至50μmのシリカ粉末を200 乃至400 重量部、粒径
0.5 μm以下のシリカ粉末を1.5 乃至15重量部、イミダ
ゾール系硬化剤を10乃至40重量部添加した樹脂ペースト
をスクリーン印刷法を用いて印刷塗布し、次ぎに前記基
体1 の上面に外部リード端子4 を載置させるとともにこ
れを約150 ℃の温度に加熱し、樹脂ペーストを熱硬化さ
せることによって基体1 の上面に外部リード端子4 を固
定し、次ぎに絶縁枠体2 の下面に同じくビスフェノール
A型エポキシ樹脂60乃至80重量%とノボラック型エポキ
シ樹脂20乃至40重量%から成るエポキシ樹脂100 重量部
に対し、粒径1乃至50μmのシリカ粉末を200 乃至400
重量部、粒径0.5 μm以下のシリカ粉末を1.5 乃至15重
量部、イミダゾール系硬化剤を10乃至40重量部添加した
樹脂ペーストをスクリーン印刷法を用いて印刷塗布する
とともにこれを前記外部リード端子4 が固定された基体
1 の上面に載置し、しかる後、絶縁枠体2 の下面に塗布
した樹脂ペーストを約150 ℃の温度で熱硬化させること
によって行われる。To bond the external lead terminals 4 between the base 1 and the insulating frame 2 via the resin adhesive 5, first, a bisphenol A type epoxy resin 60 to 80 Weight% and novolak type epoxy resin 20 ~
200 to 400 parts by weight of silica powder having a particle size of 1 to 50 μm per 100 parts by weight of an epoxy resin composed of 40% by weight,
A resin paste containing 1.5 to 15 parts by weight of a silica powder having a particle size of 0.5 μm or less and 10 to 40 parts by weight of an imidazole-based curing agent is applied by printing using a screen printing method, and then external lead terminals 4 are formed on the upper surface of the base 1. The external lead terminals 4 are fixed on the upper surface of the base 1 by heating the resin paste to a temperature of about 150 ° C. and thermally curing the resin paste. Next, the bisphenol A type is mounted on the lower surface of the insulating frame 2. For 100 parts by weight of an epoxy resin composed of 60 to 80% by weight of an epoxy resin and 20 to 40% by weight of a novolak type epoxy resin, 200 to 400 parts by weight of silica powder having a particle size of 1 to 50 μm.
A resin paste containing 1.5 to 15 parts by weight of silica powder having a particle size of 0.5 μm or less and 10 to 40 parts by weight of an imidazole-based curing agent is printed and applied using a screen printing method, and the resin paste is applied to the external lead terminals 4. Substrate with fixed
This is carried out by placing the resin paste on the upper surface of 1 and then thermally curing the resin paste applied to the lower surface of the insulating frame 2 at a temperature of about 150 ° C.
【0021】更に前記絶縁枠体2 の開口A 内には樹脂製
充填剤7 が充填されており、該樹脂製充填剤7 によって
絶縁枠体2 の開口A 内に収容された半導体素子3 は気密
に封止される。Further, a resin filler 7 is filled in the opening A of the insulating frame 2, and the semiconductor element 3 accommodated in the opening A of the insulating frame 2 by the resin filler 7 is airtight. Sealed.
【0022】前記半導体素子3 を気密に封止するための
樹脂製充填剤7 はエポキシ樹脂、ポリイミド樹脂、フェ
ノール樹脂等から成り、例えばポリイミド樹脂となる液
状の樹脂を絶縁枠体2 の開口A 内に半導体素子3 が完全
に埋まるように充填させるとともにこれを約150 ℃の温
度で熱硬化させることによって絶縁枠体2 内に半導体素
子3 を気密に封止するようにして配される。A resin filler 7 for hermetically sealing the semiconductor element 3 is made of an epoxy resin, a polyimide resin, a phenol resin, or the like. For example, a liquid resin that becomes a polyimide resin is filled in the opening A of the insulating frame 2. The semiconductor element 3 is filled so as to be completely buried, and is thermally cured at a temperature of about 150 ° C., so that the semiconductor element 3 is disposed in the insulating frame 2 so as to hermetically seal it.
【0023】かくして本発明の半導体装置によれば、外
部リード端子4 を半田や導電性接着剤を介して外部電気
回路の配線導体に接合させ、内部の半導体素子3 を外部
電気回路に電気的に接続することによってコンピュータ
等の情報処理装置に搭載されることとなる。Thus, according to the semiconductor device of the present invention, the external lead terminal 4 is joined to the wiring conductor of the external electric circuit via the solder or the conductive adhesive, and the internal semiconductor element 3 is electrically connected to the external electric circuit. By being connected, it is mounted on an information processing device such as a computer.
【0024】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能である。It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.
【0025】[0025]
【発明の効果】本発明の半導体装置によれば、半導体素
子が搭載される基体を熱伝導率が50W/m・K以上の
鉄系合金から成る板状体の上下に、アルミニウム板を接
合させた複合金属体で形成したことから半導体素子が作
動時に多量の熱を発したとしてもその熱は基体が吸収す
るとともに大気中に良好に放散し、その結果、半導体素
子は常に低温となって長期間にわたり正常、かつ安定に
作動させることが可能となる。また本発明の半導体装置
によれば、外部リード端子を基体と絶縁枠体との間に接
着固定する樹脂製接着剤としてエポキシ樹脂に、該エポ
キシ樹脂100重量部に対し、粒径1乃至50μmのシ
リカ粉末を200乃至400重量部、粒径0.5μm以
下のシリカ粉末を1.5乃至15重量部添加させたもの
を使用したことから樹脂製接着剤の熱膨張係数が基体と
絶縁枠体と外部リード端子の各々の熱膨張係数に近似
し、基体と絶縁枠体と外部リード端子とを極めて強固に
接着することが可能となるとともに樹脂製接着剤の耐湿
性が大きく向上し、樹脂性接着剤を介して外部から半導
体素子を収容する内部に水分が入り込むのが阻止され、
半導体素子の電極等に水分付着による酸化腐蝕が発生す
るのを有効に防止して、半導体素子を長期間にわたり正
常、かつ安定に作動させることが可能となる。According to the semiconductor device of the present invention, the base on which the semiconductor element is mounted is formed by bonding an aluminum plate to the upper and lower surfaces of a plate made of an iron-based alloy having a thermal conductivity of 50 W / m · K or more. Even if the semiconductor device generates a large amount of heat during operation, the heat is absorbed by the base and is well radiated into the atmosphere, and as a result, the semiconductor device is kept at a low temperature for a long time. It is possible to operate normally and stably over a period. Further, according to the semiconductor device of the present invention, an epoxy resin is used as a resin adhesive for bonding and fixing the external lead terminals between the base and the insulating frame, and a particle size of 1 to 50 μm with respect to 100 parts by weight of the epoxy resin. Since the silica powder was added with 200 to 400 parts by weight of silica powder and 1.5 to 15 parts by weight of silica powder having a particle size of 0.5 μm or less, the coefficient of thermal expansion of the resin-based adhesive was Approximate the coefficient of thermal expansion of each of the external lead terminals, making it possible to bond the base, the insulating frame and the external lead terminals very firmly, and greatly improve the moisture resistance of the resin adhesive, Water is prevented from entering the inside of the semiconductor device from the outside via the agent,
It is possible to effectively prevent the occurrence of oxidative corrosion due to moisture adhesion to the electrodes and the like of the semiconductor element, and to operate the semiconductor element normally and stably for a long period of time.
【図1】本発明の半導体装置の一実施例を示す断面図で
ある。FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.
1・・・・・基体 1a・・・・板状体 1b・・・・アルミニウム板 2・・・・・絶縁枠体 3・・・・・半導体素子 4・・・・・外部リード端子 5・・・・・樹脂製接着剤 7・・・・・樹脂製充填剤 A・・・・・開口 1 ... Base 1a ... Plate 1b ... Aluminum plate 2 ... Insulating frame 3 ... Semiconductor element 4 ... External lead terminal 5 ... .... Resin adhesive 7 ... Resin filler A ... Opening
Claims (2)
有する絶縁枠体とを接着剤を介して順次、取着し、前記
絶縁枠体の開口内に半導体素子を収容するとともに該半
導体素子を絶縁枠体の開口内に充填させた樹脂製充填剤
で気密に封止して成る半導体装置であって、前記接着剤
はエポキシ樹脂100重量部に対し、粒径1乃至50μ
mのシリカ粉末を200乃至400重量部、粒径0.5
μm以下のシリカ粉末を1.5乃至15重量部添加した
もので形成されており、かつ前記基体は鉄系合金から成
る板状体の上下に、アルミニウム板を接合させた複合金
属体で形成されていることを特徴とする半導体装置。A plurality of external lead terminals and an insulating frame having an opening are successively attached on a substrate via an adhesive, and a semiconductor element is accommodated in the opening of the insulating frame and the semiconductor is mounted. A semiconductor device in which an element is hermetically sealed with a resin filler filled in an opening of an insulating frame, wherein the adhesive has a particle size of 1 to 50 μm per 100 parts by weight of an epoxy resin.
m to 200 to 400 parts by weight of silica powder, particle size 0.5
The base is formed of a composite metal body in which an aluminum plate is joined to upper and lower sides of a plate-like body made of an iron-based alloy, to which 1.5 to 15 parts by weight of silica powder of μm or less is added. A semiconductor device characterized in that:
アルミニウム板の厚みbが4.5 ≧b/a≧0.2 であるこ
とを特徴とする請求項1に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the composite metal body has a thickness b of the aluminum plate with respect to a thickness a of the plate-like body satisfying 4.5 ≧ b / a ≧ 0.2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4342992A JP2831219B2 (en) | 1992-12-24 | 1992-12-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4342992A JP2831219B2 (en) | 1992-12-24 | 1992-12-24 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06196589A JPH06196589A (en) | 1994-07-15 |
JP2831219B2 true JP2831219B2 (en) | 1998-12-02 |
Family
ID=18358104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4342992A Expired - Fee Related JP2831219B2 (en) | 1992-12-24 | 1992-12-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2831219B2 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63261863A (en) * | 1987-04-20 | 1988-10-28 | Hitachi Cable Ltd | Surface mounting substrate |
JPH02348A (en) * | 1987-05-28 | 1990-01-05 | Hitachi Cable Ltd | Semiconductor device |
-
1992
- 1992-12-24 JP JP4342992A patent/JP2831219B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06196589A (en) | 1994-07-15 |
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