JP2824877B2 - Method for producing quartz glass compact for ultraviolet laser - Google Patents

Method for producing quartz glass compact for ultraviolet laser

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Publication number
JP2824877B2
JP2824877B2 JP3280897A JP28089791A JP2824877B2 JP 2824877 B2 JP2824877 B2 JP 2824877B2 JP 3280897 A JP3280897 A JP 3280897A JP 28089791 A JP28089791 A JP 28089791A JP 2824877 B2 JP2824877 B2 JP 2824877B2
Authority
JP
Japan
Prior art keywords
quartz glass
synthetic quartz
glass molded
voltage
molded body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3280897A
Other languages
Japanese (ja)
Other versions
JPH05147957A (en
Inventor
政彦 遠藤
朗 藤ノ木
裕幸 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
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Filing date
Publication date
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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Lasers (AREA)
  • Glass Melting And Manufacturing (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、紫外線、特にエキシマ
レーザーの照射に対して優れた安定性を有する光学用石
英ガラス成形体に関し、特に、エキシマレーザーを光源
とするステッパーの光学系、特にArFエキシマレーザ
ーのステッパー光学系を形成する石英ガラス成形体に好
適な、透過率に優れたエキシマレーザー用石英ガラス成
形体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical quartz glass molded article having excellent stability against irradiation of ultraviolet rays, particularly excimer laser, and more particularly to an optical system of a stepper using an excimer laser as a light source, particularly ArF. The present invention relates to a method for producing a quartz glass molded body for an excimer laser which is suitable for a quartz glass molded body forming an excimer laser stepper optical system and has excellent transmittance.

【0002】[0002]

【従来技術及び本発明が解決しようとする問題点】近
年、LSIの高集積化に伴い、ウエハー上に集積回路パ
ターンを描画する光リソグラフィー技術においても、サ
ブミクロン単位の描画技術が要求されており、より微細
な線幅描画を行うために、露光系の光源の短波長化が進
められてきている。特に最近では、露光用の光源として
KrFエキシマレーザー光(波長248nm)及びAr
Fエキシマレーザー光(波長193nm)が考えられ、
光学部材として用いられるガラス材料においても、25
0nm以下の波長の光の透過性がきわめて重要な特性と
して注目されている。
2. Description of the Related Art In recent years, with the increasing integration of LSIs, a submicron-level drawing technique has been required also in an optical lithography technique for drawing an integrated circuit pattern on a wafer. In order to perform finer line width drawing, the wavelength of a light source of an exposure system has been shortened. Particularly recently, KrF excimer laser light (wavelength 248 nm) and Ar
F excimer laser light (wavelength 193 nm) is considered,
In glass materials used as optical members, 25
Attention has been paid to the transmittance of light having a wavelength of 0 nm or less as a very important property.

【0003】一般的には、この波長領域において十分な
透過性を示す材料は、ガラスとしては、石英ガラス以外
になく、石英ガラスにおいても四塩化珪素等を火炎加水
分解して製造される、いわゆる合成石英ガラスでなけれ
ば、実質的に十分な透過率を与えない。一方で、エキシ
マレーザーステッパーにおける光学系に使用されるレン
ズ等の光学部品を構成するガラス材料には、均一な像を
得るためにきわめて厳密な均質性が要求され、かかる均
質性を合成石英ガラス材料に付与するためには、均質化
工程及びアニール工程等の非常に長時間を要する工程が
必要とされる。更に一般的には、合成石英ガラス材料を
望ましい形状に成形する成形工程も工業上は必要とな
る。
[0003] In general, there is no material showing sufficient transmittance in this wavelength region other than quartz glass as glass, and so-called quartz glass is produced by flame hydrolysis of silicon tetrachloride or the like. Unless it is synthetic quartz glass, it does not provide substantially sufficient transmittance. On the other hand, glass materials constituting optical components such as lenses used for optical systems in excimer laser steppers are required to have extremely strict homogeneity in order to obtain a uniform image. In order to impart a high temperature, steps requiring a very long time such as a homogenization step and an annealing step are required. More generally, an industrial process is also required to form a synthetic quartz glass material into a desired shape.

【0004】この合成石英ガラスに均質性を与えるため
に行われる処理工程並びに成形工程は、高温で長時間に
亘って行われるために、均質化された合成石英ガラス成
形体は、処理工程及び成形工程における雰囲気、治具、
炉材等から汚染され、合成石英ガラスの紫外線透過性を
劣化させる結果となっている。このような工程による合
成石英ガラスの汚染は、合成石英ガラスの、特に真空紫
外領域(波長200nm以下)の透過率を著しく低下さ
せ、エキシマレーザー光の中でも、特に波長の短いAr
Fエキシマレーザーを光源とするステッパーの光学系で
は深刻な問題である。
[0004] Since the processing step and the forming step performed to impart homogeneity to the synthetic quartz glass are performed at a high temperature for a long time, the homogenized synthetic quartz glass molded article is processed and formed. Atmosphere, jig,
It is contaminated by furnace materials and the like, resulting in deterioration of the ultraviolet transmittance of synthetic quartz glass. The contamination of the synthetic quartz glass by such a process significantly lowers the transmittance of the synthetic quartz glass, particularly in the vacuum ultraviolet region (wavelength of 200 nm or less), and among the excimer laser beams, Ar having a particularly short wavelength is used.
This is a serious problem in an optical system of a stepper using an F excimer laser as a light source.

【0005】この様な工程における合成石英ガラス成形
体の汚染を減じさせる努力は継続して行われているが、
高温での熱処理に用いられる炉材や治具は、合成石英ガ
ラスを汚染するアルミナ、ジルコニア、グラファイト等
の材料で形成されており、また200nm以下の波長の
光の透過率は、合成石英ガラス成形体の僅かな汚染によ
っても著しく低下するために、均質性を付与した石英ガ
ラスのこの領域での透過率はステッパー光学系において
望まれる基準を満足してはいない。
Efforts have been continuously made to reduce the contamination of the synthetic quartz glass molded article in such a process.
Furnace materials and jigs used for heat treatment at high temperatures are made of materials such as alumina, zirconia, and graphite that contaminate synthetic quartz glass. The transmittance in this region of the homogenized quartz glass does not meet the criteria desired in stepper optics, since even a slight contamination of the body significantly reduces it.

【0006】[0006]

【課題を解決するための手段】本発明は、エキシマレー
ザー光学系用として必要な均質性を与えるための均質化
処理及び成形処理が施され、エキシマレーザー用の均質
性を有する合成石英ガラス成形体について、均質性を損
なうことなしに200nm以下の波長の光の透過率を回
復させる方法を提供することを目的としている。即ち、
本発明は、少なくとも光透過方向に脈理が存在しない合
成石英ガラス成形体を800℃乃至1500℃の範囲内
の温度に保持しながら、該ガラス成形体の相対する2つ
の面に、少なくとも100DCV/cmの直流電圧を印
加することを特徴とするエキシマレーザー用石英ガラス
成形体の製造方法にある。
SUMMARY OF THE INVENTION The present invention provides a synthetic quartz glass molded article having a homogeneity for an excimer laser, which has been subjected to a homogenization treatment and a molding treatment for providing homogeneity required for an excimer laser optical system. It is an object of the present invention to provide a method for restoring the transmittance of light having a wavelength of 200 nm or less without impairing the homogeneity. That is,
The present invention provides a synthetic quartz glass molded body having no striae at least in the light transmission direction at a temperature in the range of 800 ° C. to 1500 ° C. while applying at least 100 DCV / The present invention relates to a method for producing a quartz glass molded body for excimer laser, characterized in that a DC voltage of 1 cm is applied.

【0007】本発明において、素材としては、エキシマ
ステッパー光学系を構成するに必要な光学特性、即ち、
少なくとも光が透過する方向に脈理を有さず、高度に均
質な屈折率分布を有し、かつ残留歪が存在しない、レン
ズ、プリズム等の光学部材を形成するに好適な形状、即
ち円筒状、角柱状又はこれらに類する形状の合成石英ガ
ラス成形体が使用される。これらの合成石英ガラス成形
体は、上記特性、形状に形成させるに際し、均質化工
程、成形工程、アニール工程の内、少なくとも1つの熱
処理工程を経ており、このために、波長200nm以
下、特に波長200nm〜180nmの領域に、程度の
差こそあれ、熱処理工程中の汚染による光の吸収を有し
ている。
[0007] In the present invention, the material is an optical characteristic required for constituting an excimer stepper optical system, that is,
At least no striae in the direction in which light is transmitted, having a highly uniform refractive index distribution, and having no residual distortion, a shape suitable for forming an optical member such as a lens or a prism, that is, a cylindrical shape , Prismatic or similar synthetic quartz glass moldings are used. These synthetic quartz glass molded bodies have undergone at least one heat treatment step among a homogenization step, a molding step, and an annealing step when being formed into the above-described properties and shapes, and therefore have a wavelength of 200 nm or less, particularly a wavelength of 200 nm. It has light absorption due to contamination during the heat treatment process to a greater or lesser extent in the region of -180 nm.

【0008】本発明の効果を最大にするためには、原材
料の純度を向上させ、また各工程における汚染を極力減
少させて、出発材の合成石英ガラス成形体において、2
00nm以下の波長の領域における光の吸収を極小とす
ることが望ましいが、本発明は、波長200nm以下の
領域における出発体の光の吸収の程度に左右されない。
In order to maximize the effects of the present invention, the purity of raw materials is improved, and contamination in each step is reduced as much as possible.
It is desirable to minimize the light absorption in the wavelength region of 00 nm or less, but the present invention is not affected by the degree of light absorption of the starting material in the wavelength region of 200 nm or less.

【0009】本発明者らは、このような熱処理における
汚染によって生じる200nm以下の波長の光の吸収
が、当該合成石英ガラス成形体に、所定温度において直
流の高電圧を印加することにより消失することを発見し
た。しかも、この場合、光透過率以外の、ステッパー光
学系を形成するうえで要求される光学特性は、残留歪を
除いては損なわれないことが分かった。残留歪は熱歪で
あるので、本発明の処理温度を例えば1000℃以上に
設定したような場合、冷却速度を早くすると増大して、
実用上問題となるが、本発明においては、電圧印加処理
後の冷却速度を適切に設定することにより、残留歪みを
十分に低減することができる。
The present inventors have found that the absorption of light having a wavelength of 200 nm or less caused by such contamination in heat treatment disappears by applying a high DC voltage at a predetermined temperature to the synthetic quartz glass molded body. Was found. Moreover, in this case, it has been found that the optical characteristics required for forming the stepper optical system other than the light transmittance are not impaired except for the residual strain. Since the residual strain is a thermal strain, when the processing temperature of the present invention is set to, for example, 1000 ° C. or higher, the cooling rate increases to increase,
Although practically problematic, in the present invention, by appropriately setting the cooling rate after the voltage application processing, the residual strain can be sufficiently reduced.

【0010】本発明において、直流電圧の印加は、80
0℃乃至1500℃の温度範囲内の温度で行なわれるの
が望ましい。直流電圧の印加を、800℃以下の温度で
行うと、光透過率の向上が確認されず、1500℃以上
の温度で行うと、高電圧に適した絶縁体は厚さが極めて
厚くなり、構造上好ましくない。また、、印加する直流
電圧は、合成石英ガラス成形体1cmあたりの電圧勾配
が100DCV以上であることが望ましい。
In the present invention, the application of a DC voltage
It is desirable to carry out at a temperature within the temperature range of 0 ° C to 1500 ° C. When a DC voltage is applied at a temperature of 800 ° C. or less, no improvement in light transmittance is observed. When the voltage is applied at a temperature of 1500 ° C. or more, an insulator suitable for high voltage becomes extremely thick, and the Not preferred. The applied DC voltage preferably has a voltage gradient of 100 DCV or more per 1 cm of the synthetic quartz glass molded body.

【0011】合成石英ガラス成形体に印加する直流電圧
が100DCV/cm以下の電圧であると、十分な光透
過率の向上を、達成することが難しい。一方で、電圧は
高い程効果的であるが、3000DCV/cm以上の直
流電圧では、適切な絶縁材料の厚さが極めて厚くなり、
構造上好ましくない。本発明において、残留歪は熱処理
の冷却中に決定されるが、これは冷却速度を5℃/時間
以下として徐冷することにより、実用上問題のない程度
にまで(5nm/cm以下)低減することができる。こ
の際、電圧は印加していても、していなくても特性に影
響を与えない。
If the DC voltage applied to the synthetic quartz glass molded body is less than 100 DCV / cm, it is difficult to sufficiently improve the light transmittance. On the other hand, the higher the voltage, the more effective, but at a DC voltage of 3000 DCV / cm or more, the thickness of a suitable insulating material becomes extremely thick,
It is not preferable in structure. In the present invention, the residual strain is determined during the cooling of the heat treatment, and this is reduced to a practically acceptable level (5 nm / cm or less) by gradually cooling at a cooling rate of 5 ° C./hour or less. be able to. At this time, the characteristics are not affected whether the voltage is applied or not.

【0012】本発明では、電極として、高純度グラファ
イトが使用されるが、グラファイト自体が、合成石英ガ
ラス成形体に対する汚染源となるので、できる限り高純
度のものを選択し、使用に際しては、予め使用温度によ
り50〜100℃高い温度で少なくとも100時間程度
空焼きを施すことが好ましい。この電極の空焼き処理に
より、グラファイト中の不純物が除去され、本発明を効
果的に行うことができる。
In the present invention, high-purity graphite is used as an electrode. However, graphite itself is a source of contamination for a synthetic quartz glass molded body. It is preferable to perform baking at a temperature higher by 50 to 100 ° C. for at least 100 hours depending on the temperature. By the baking treatment of the electrode, the impurities in the graphite are removed, and the present invention can be effectively performed.

【0013】素材の残留歪については、先に述べた通り
に本処理工程の冷却中に設定しうるので出発素材の限定
から解除してもよく、この場合、屈折率分布の均質性に
ついても残留歪に限定を加えない場合には確認の方法が
無いので事実上限定出来ない。
Since the residual strain of the material can be set during the cooling of the present process as described above, it may be released from the limitation of the starting material. In this case, the homogeneity of the refractive index distribution also remains. In the case where no limitation is applied to the distortion, there is no confirmation method, so that it cannot be practically limited.

【0014】[0014]

【作用】本発明は、少なくとも光透過方向に脈理が存在
しない合成石英ガラス成形体を800℃乃至1500℃
の範囲内の温度に保持しながら、該ガラス成形体の相対
する2つの面に、少なくとも100DCV/cmの直流
電圧を印加するので、合成石英ガラス成形体の熱処理等
による汚染が電気的に除去されることになり、200n
m以下の波長の光の吸収を生じない。
According to the present invention, a synthetic quartz glass molded body having no striae at least in the light transmission direction is formed at 800 ° C to 1500 ° C.
Since a DC voltage of at least 100 DCV / cm is applied to the two opposing surfaces of the glass molded body while maintaining the temperature within the range, contamination due to heat treatment or the like of the synthetic quartz glass molded body is electrically removed. Will be 200n
No absorption of light having a wavelength of less than m.

【0015】[0015]

【実施例】以下、本願発明の実施の態様について、例を
挙げて説明するが、本発明はこれらの例示及び説明によ
り何ら限定されるものではない。 実施例1.本例で使用する合成石英ガラス成形体は、合
成石英ガラスに均質化処理を施し、直径100mm、厚
さ30mmの円柱状に成形した後、1150℃でアニー
ルして得られたものである。この合成石英ガラス成形体
は、3方向に脈理を有さず、均質な屈折率分布を有して
おり、1cm厚さにおける屈折率の最大値と最小値の差
(Δn)は、Δn=2×10−6であった。
The embodiments of the present invention will be described below with reference to examples, but the present invention is not limited to these examples and descriptions. Embodiment 1 FIG. The synthetic quartz glass molded body used in this example is obtained by subjecting a synthetic quartz glass to homogenization treatment, forming it into a cylindrical shape having a diameter of 100 mm and a thickness of 30 mm, and then annealing at 1150 ° C. This synthetic quartz glass molded body has no striae in three directions and has a uniform refractive index distribution, and the difference (Δn) between the maximum value and the minimum value of the refractive index at a thickness of 1 cm is Δn = It was 2 × 10 −6 .

【0016】この合成石英ガラス成形体は、研磨後、真
空紫外分光光度計により、波長240nm以下の領域に
おける光の透過率を測定して、該合成石英ガラス成形体
の両端面に高純度グラファイト電極をセットし、石英ガ
ラス管を炉芯管とする縦型管状炉内に配置した。合成石
英ガラス成形体に対する直流電圧の印加は、窒素を50
0ml/分で流しながら加熱して、温度1150℃に至
ったところで、両端に3000Vの直流電圧を印加し、
直流電圧を印加しながら5時間放置した。5時間経過し
たところで通電を停止し、5℃/時間の冷却速度でゆっ
くりと室温まで冷却した。縦型管状炉から直流電圧を印
加された合成石英ガラス成形体を取り出し、再研磨し、
光透過率ついて同様に測定した。
After polishing the synthetic quartz glass molded body, the transmittance of light in a wavelength region of 240 nm or less is measured by a vacuum ultraviolet spectrophotometer, and high-purity graphite electrodes are applied to both end surfaces of the synthetic quartz glass molded body. Was set and arranged in a vertical tubular furnace using a quartz glass tube as a furnace core tube. DC voltage applied to the synthetic quartz glass compact
When heated at a flow rate of 0 ml / min and reached a temperature of 1150 ° C., a DC voltage of 3000 V was applied to both ends,
It was left for 5 hours while applying a DC voltage. After 5 hours, the power supply was stopped, and the mixture was slowly cooled to room temperature at a cooling rate of 5 ° C./hour. The synthetic quartz glass compact to which a DC voltage was applied was taken out of the vertical tubular furnace, polished again,
The light transmittance was similarly measured.

【0017】直流電圧印加後の合成石英ガラス成形体、
即ち本発明の実施例(I)と直流電圧印加前の合成石英
ガラス成形体(II)について、光透過率のチャートを
図1に示す。図1に示されるように直流電圧印加前の合
成石英ガラス成形体(II)において観察された190
nmをピークとする吸収が、直流電圧印加後の合成石英
ガラス成形体(I)では全く観察されず、特にArFエ
キシマレーザーの発振波長である193nmでの透過率
が大幅に改良されている。一方で、電圧印加処理を施し
た合成石英ガラス成形体の歪みを歪計で測定したとこ
ろ、2nm/cm以下と好適な値を示した。該石英ガラ
ス素体の屈折率分布を示す干渉縞を図2に示す。処理後
も光学部材として必要な優れた均質性を有していること
がわかる。
A synthetic quartz glass molded body after application of a DC voltage,
That is, FIG. 1 shows a chart of the light transmittance of the embodiment (I) of the present invention and the synthetic quartz glass molded body (II) before the application of the DC voltage. As shown in FIG. 1, 190 observed in the synthetic quartz glass molded body (II) before the application of the DC voltage.
Absorption having a peak at nm is not observed at all in the synthetic quartz glass molded article (I) after the application of a DC voltage, and the transmittance at 193 nm, which is the oscillation wavelength of an ArF excimer laser, is particularly greatly improved. On the other hand, when the strain of the synthetic quartz glass molded body subjected to the voltage application treatment was measured with a strain gauge, a suitable value of 2 nm / cm or less was shown. FIG. 2 shows interference fringes showing the refractive index distribution of the quartz glass body. It can be seen that even after the treatment, it has excellent homogeneity required as an optical member.

【0018】比較例1 実施例で使用した合成石英ガラス成形体と同一の条件で
均質化処理を施し、成形した合成石英ガラス成形体を、
その儘、縦型管状炉に配置し、750℃で両端に300
0Vの直流電圧を印加し5時間保持後、5℃/時間の冷
却速度で室温まで冷却した。処理後の石英ガラス素体を
真空紫外分光光度計で透過率測定した結果を図3に示
す。190nmをピークとする吸収は消失していない。
Comparative Example 1 A synthetic quartz glass molded article subjected to homogenization treatment under the same conditions as the synthetic quartz glass molded article used in the example was molded.
As it is, it is placed in a vertical tube furnace, and at 750 ° C., 300
After applying a DC voltage of 0 V and holding for 5 hours, the resultant was cooled to room temperature at a cooling rate of 5 ° C./hour. FIG. 3 shows the results of measuring the transmittance of the quartz glass body after the treatment with a vacuum ultraviolet spectrophotometer. Absorption having a peak at 190 nm has not disappeared.

【0019】比較例2 実施例で使用した合成石英ガラス成形体と同一の条件で
均質化処理を施し、成形した合成石英ガラス成形体を、
その儘、縦型管状炉に配置し、1150℃で両端に25
0Vの直流電圧を印加し5時間保持後、5℃/時間の冷
却速度で室温まで冷却した。冷却後、直流電圧印加した
合成石英ガラス成形体を真空紫外分光光度計で光透過率
測定した結果を図4に示す。190nmをピークとする
吸収は消失していない。
Comparative Example 2 A synthetic quartz glass molded article subjected to homogenization treatment under the same conditions as the synthetic quartz glass molded article used in the example was molded.
As it is, it is placed in a vertical tube furnace and placed at both ends at 1150 ° C.
After applying a DC voltage of 0 V and holding for 5 hours, the resultant was cooled to room temperature at a cooling rate of 5 ° C./hour. After cooling, the synthetic quartz glass compact to which a DC voltage was applied was subjected to light transmittance measurement with a vacuum ultraviolet spectrophotometer, and the result is shown in FIG. Absorption having a peak at 190 nm has not disappeared.

【0020】[0020]

【発明の効果】本発明は、少なくとも光透過方向に脈理
を有さない合成石英ガラス成形体を800℃乃至150
0℃の範囲内の温度に保持しながら、該ガラス成形体の
相対する2つの面に、少なくとも100DCV/cmの
直流電圧を印加するので、熱処理の過程での汚染が電気
的に除去されることになり、本発明の合成石英ガラス成
形体は従来の合成石英ガラス成形体に比して、均質な屈
折率分布を有しており、光透過性に優れている。したが
って、光学部材として、本発明のものは、従来のものに
比して、鮮明な像を得ることができる。
According to the present invention, a synthetic quartz glass molded body having no striae at least in the light transmission direction is formed at a temperature of 800 ° C. to 150 ° C.
A DC voltage of at least 100 DCV / cm is applied to two opposing surfaces of the glass molded body while maintaining the temperature within the range of 0 ° C., so that contamination during the heat treatment is electrically removed. Thus, the synthetic quartz glass molded article of the present invention has a uniform refractive index distribution and is excellent in light transmittance as compared with a conventional synthetic quartz glass molded article. Therefore, the optical member according to the present invention can obtain a clearer image than the conventional optical member.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の直流電圧を印加した合成石
英ガラス成形体の光透過率曲線(I)と、直流電圧印加
しない合成石英ガラス成形体の光透過率曲線(II)を
示す光透過率曲線図である。
FIG. 1 shows a light transmittance curve (I) of a synthetic quartz glass molded article to which a DC voltage is applied according to an embodiment of the present invention, and a light transmittance curve (II) of a synthetic quartz glass molded article to which no DC voltage is applied. It is a light transmittance curve figure.

【図2】本発明の他の一実施例の直流電圧を印加した後
の合成石英ガラス成形体の屈折率分布が、厚さ1cmあ
たりの屈折率の最大値と最小値の差(Δn)で、Δn=
2×10−6と良好な均質性の干渉縞を示す説明図であ
る。
FIG. 2 shows a refractive index distribution of a synthetic quartz glass molded body after application of a DC voltage according to another embodiment of the present invention, which is represented by a difference (Δn) between a maximum value and a minimum value of the refractive index per 1 cm in thickness. , Δn =
It is explanatory drawing which shows the interference fringes of 2 * 10 <-6> and favorable homogeneity.

【図3】比較例1の直流電圧を印加した合成石英ガラス
成形体の光透過率曲線(I)と、直流電圧印加しない合
成石英ガラス成形体の光透過率曲線(II)を示す光透
過率曲線図である。
FIG. 3 shows a light transmittance curve (I) of a synthetic quartz glass molded article to which a DC voltage is applied in Comparative Example 1 and a light transmittance curve (II) of a synthetic quartz glass molded article to which no DC voltage is applied. It is a curve figure.

【図4】比較例2の直流電圧を印加した合成石英ガラス
成形体の光透過率曲線(I)と、直流電圧印加しない合
成石英ガラス成形体の光透過率曲線(II)を示す光透
過率曲線図である。
FIG. 4 shows light transmittance curves (I) of a synthetic quartz glass molded article to which a DC voltage is applied and a light transmittance curve (II) of a synthetic quartz glass molded article to which no DC voltage is applied in Comparative Example 2. It is a curve figure.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特表 平4−500197(JP,A) 特表 昭62−501067(JP,A) (58)調査した分野(Int.Cl.6,DB名) C03B 20/00────────────────────────────────────────────────── ─── Continuation of the front page (56) References Special Table Hei 4-500197 (JP, A) Special Table Sho 62-501067 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C03B 20/00

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持しながら、該ガラス成形体の相対する
2つの面に、少なくとも100DCV/cmの直流電圧
を印加することを特徴とするエキシマレーザー用石英ガ
ラス成形体の製造方法。
At least 100 DCV is applied to two opposing surfaces of a synthetic quartz glass molded body at a temperature in a range of 800 ° C. to 1500 ° C. while maintaining a synthetic quartz glass molded body having no striae in at least a light transmission direction. A method for producing a quartz glass molded body for excimer laser, comprising applying a DC voltage of / cm.
【請求項2】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持し、該ガラス成形体の相対する2つの
面に、少なくとも100DCV/cmの直流電圧を印加
しながら、該ガラス成形体を5℃/時間以下の冷却速度
で、徐冷することを特徴とするエキシマレーザー用石英
ガラス成形体の製造方法。
2. A synthetic quartz glass molded body having no striae at least in the light transmission direction is kept at a temperature in the range of 800 ° C. to 1500 ° C., and at least 100 DCV / A method for producing a quartz glass molded article for an excimer laser, comprising gradually cooling the glass molded article at a cooling rate of 5 ° C./hour or less while applying a DC voltage of 5 cm.
【請求項3】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持し、該ガラス成形体の相対する2つの
面に、少なくとも100DCV/cmの直流電圧を印加
した後に、該ガラス部材を5℃/時間以下の冷却速度
で、徐冷することを特徴とするエキシマレーザー用石英
ガラス成形体の製造方法。
3. A synthetic quartz glass molded body having no striae at least in the light transmission direction is kept at a temperature in the range of 800 ° C. to 1500 ° C., and at least 100 DCV / A method for producing a quartz glass molded article for excimer laser, characterized in that after applying a DC voltage of 5 cm, the glass member is gradually cooled at a cooling rate of 5 ° C./hour or less.
JP3280897A 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser Expired - Fee Related JP2824877B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3280897A JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3280897A JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Publications (2)

Publication Number Publication Date
JPH05147957A JPH05147957A (en) 1993-06-15
JP2824877B2 true JP2824877B2 (en) 1998-11-18

Family

ID=17631471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3280897A Expired - Fee Related JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Country Status (1)

Country Link
JP (1) JP2824877B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194667B2 (en) * 1994-03-26 2001-07-30 信越石英株式会社 Synthetic quartz glass molded article for optical use and method for producing the same

Also Published As

Publication number Publication date
JPH05147957A (en) 1993-06-15

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