JP2809038B2 - Environmental control device and environmental control method - Google Patents
Environmental control device and environmental control methodInfo
- Publication number
- JP2809038B2 JP2809038B2 JP5066512A JP6651293A JP2809038B2 JP 2809038 B2 JP2809038 B2 JP 2809038B2 JP 5066512 A JP5066512 A JP 5066512A JP 6651293 A JP6651293 A JP 6651293A JP 2809038 B2 JP2809038 B2 JP 2809038B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- acid
- air
- exposure
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、縮小投影露光装置の環
境制御装置及びその環境制御方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an environment control device for a reduction projection exposure apparatus and a method for controlling the environment.
【０００２】[0002]
【従来の技術】近年、半導体装置の微細化に伴い、露光
工程においては光の短波長化が進み、それに伴い新しい
レジスト材料が開発され、酸発生による化学増幅を利用
した化学増幅型レジストが有望視されている(例えば、
O.Nalamasu et al ., Proc. of SPIE, vol.1466, p.
238 (1991))。2. Description of the Related Art In recent years, with the miniaturization of semiconductor devices, the wavelength of light has been shortened in the exposure process, and a new resist material has been developed. Accordingly, a chemically amplified resist utilizing chemical amplification by acid generation is promising. (For example,
O.Nalamasu et al., Proc. Of SPIE, vol.1466, p.
238 (1991)).
【０００３】図２は化学増幅型レジストのパターン形成
方法の工程断面図を示すものである。ウエハ８に化学増
幅型レジスト９を1μｍ厚に形成する（図２（a））。通
常のクリーンルーム内で、マスク10を介してKrFエキシ
マレーザースッテパー（NA0.42）にて25mJ/cm2の露光11
を行い（図２（b））、この後、95℃90秒の加熱12を行
う（図２（c））。そして、2.38％のアルカリ水溶液60
秒にて現像を行い、ポジ型のパターン9Aを形成する（図
２（d））。FIG. 2 is a process sectional view of a method for forming a pattern of a chemically amplified resist. A 1 μm thick chemically amplified resist 9 is formed on the wafer 8 (FIG. 2A). Exposure at 25 mJ / cm 2 with a KrF excimer laser stepper (NA 0.42) through a mask 10 in a normal clean room
(FIG. 2 (b)), followed by heating 12 at 95 ° C. for 90 seconds (FIG. 2 (c)). And 2.38% alkaline aqueous solution 60
Development is performed in seconds to form a positive pattern 9A (FIG. 2D).
【０００４】化学増幅型レジストはエネルギー線により
酸を発生する酸発生剤、酸によりアルカリ可溶性となる
高分子、および溶媒よりなっている。パターン形成工程
において、露光によりレジスト中の酸発生剤から酸が発
生し、その酸がアルカリ不溶性であった高分子と反応
し、アルカリ可溶性となる。次の加熱工程によりこの反
応がレジスト底部まで拡散し、さらにアルカリ現像工程
により、露光部では高分子が溶解し未露光部では高分子
が溶解しないことにより、ポジ型パターンが形成され
る。A chemically amplified resist comprises an acid generator that generates an acid by an energy ray, a polymer that is alkali-soluble by an acid, and a solvent. In the pattern forming step, an acid is generated from the acid generator in the resist by exposure, and the acid reacts with the alkali-insoluble polymer to become alkali-soluble. This reaction is diffused to the bottom of the resist by the next heating step, and the polymer is dissolved in the exposed part and not dissolved in the unexposed part by the alkali developing step, so that a positive pattern is formed.
【０００５】しかし露光の行われる縮小投影露光装置の
チャンバー内雰囲気にガス状不純物が存在すると、図２
（e）の9Bや図２（f）の9Cに示すような不良パターンと
なり、所望のパーターンが得られないことがある。However, if gaseous impurities are present in the atmosphere in the chamber of the reduction projection exposure apparatus in which exposure is performed, FIG.
A defective pattern such as 9B in (e) or 9C in FIG. 2 (f) may be obtained, and a desired pattern may not be obtained.
【０００６】上記の化学増幅型レジストを露光する、従
来の露光装置としては、例えば、特開昭61-101018号公
報に記載されるものがあった。A conventional exposure apparatus for exposing the above-mentioned chemically amplified resist has been disclosed, for example, in JP-A-61-101018.
【０００７】図３は、係る従来の縮小投影装置の環境制
御装置の概略図である。この図に示すように、縮小投影
装置のチャンバ２内には給気口３から空気が送り込まれ
ている。上記空気は、まず空気取り込み口４から取り込
まれ、温湿度制御システム６で温度、湿度が調整され、
フィルタ７で塵埃を除去された後チャンバ内に送り込ま
れている。FIG. 3 is a schematic diagram of an environment control device of such a conventional reduction projection device. As shown in this figure, air is supplied from a supply port 3 into a chamber 2 of the reduction projection apparatus. The air is first taken in from the air intake port 4, and the temperature and humidity are adjusted by the temperature / humidity control system 6,
After the dust is removed by the filter 7, it is sent into the chamber.
【０００８】また、近年は半導体装置の製造雰囲気を清
浄に保つ技術として、特開平3-173114号公報に示すよう
な半導体製造設備に作業雰囲気を清浄化するガス状不純
物除去を具備するようなものが開発された。In recent years, as a technique for keeping a semiconductor device manufacturing atmosphere clean, a semiconductor manufacturing facility as disclosed in Japanese Patent Application Laid-Open No. 3-173114 is provided with gaseous impurity removal for cleaning the working atmosphere. Was developed.
【０００９】図４はかかる従来例の一実施例であるレジ
スト加熱を行うベーク炉である。図４において、13はガ
ス状不純物除去手段、５は加圧送風機、８はウエハ、15
はヒータ、16は排気口である。ベーク炉内に導入される
空気は加圧送風機５によってガス状不純物除去手段13を
通過する間に空気中のガス状不純物が除去される。ベー
ク処理に伴ってベーク炉18内に発生した溶剤は、ガス状
不純物除去手段により供給された空気に置換され、排気
口16から排出される。従って、ベーク炉14内は高度に清
浄化され、ウエハ８のレジスト面に不純物を付着させる
ことがない。FIG. 4 shows a baking furnace for heating a resist according to an embodiment of the prior art. In FIG. 4, 13 is a gaseous impurity removing means, 5 is a pressure blower, 8 is a wafer, 15
Is a heater, and 16 is an exhaust port. While the air introduced into the bake oven passes through the gaseous impurity removing means 13 by the pressure blower 5, gaseous impurities in the air are removed. The solvent generated in the baking furnace 18 due to the baking process is replaced with air supplied by the gaseous impurity removing means, and is discharged from the exhaust port 16. Therefore, the inside of the baking furnace 14 is highly cleaned, and no impurities adhere to the resist surface of the wafer 8.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、上記構
成の従来の露光装置では、縮小投影露光装置チャンバ内
の空気は、温度、湿度、塵埃、気圧については制御され
ているが、フィルタで除去できないガス状不純物につい
ては制御されておらず、空気取り込み口の空気中にガス
状不純物が存在する場合、ガス状不純物はフィルターで
は除去されないため、露光チャンバー内はガス状不純物
で汚染されたままとなっている。However, in the conventional exposure apparatus having the above-described structure, the temperature, humidity, dust, and air pressure in the reduced projection exposure apparatus chamber are controlled, but the air cannot be removed by the filter. If gaseous impurities are present in the air at the air intake, the gaseous impurities will not be removed by the filter, and the gas inside the exposure chamber will remain contaminated with gaseous impurities. I have.
【００１１】このようなチャンバー雰囲気中で、化学増
幅型レジストの露光を行なうと、次のような問題を生じ
る。Exposure of a chemically amplified resist in such a chamber atmosphere causes the following problems.
【００１２】化学増幅型レジストは露光によりレジスト
中の酸発生剤から酸が発生し、その酸がアルカリ不溶性
であった高分子と反応し、アルカリ可溶性となる。次の
加熱工程によりこの反応がレジスト底部まで拡散し、さ
らにアルカリ現像工程により、露光部では高分子が溶解
し未露光部では高分子が溶解しないことにより、ポジ型
パターンが形成される。しかし露光の行われるチャンバ
ー内に、アミン系や有機系のガスが存在する場合、露光
によりレジスト中で発生した酸がこれらのガスと反応
し、酸が消滅あるいは効力を失い、化学増幅型レジスト
の反応が阻害され、図２（e）の9Bに示すようなパター
ン上部が現像されないパターン形状になり、所望のパタ
ーンが得られないという問題点があった。また縮小投影
露光装置のチャンバー内雰囲気に酸系のガスが存在して
いる場合、雰囲気中の酸とレジスト中の高分子と反応
し、露光部以外の部分でもアルカリ可溶性となり、図２
（f）の9Cに示すようなオーバー露光したようなパター
ン形状になり、所望のパターン形状が得られないという
問題点があった。The chemically amplified resist generates an acid from the acid generator in the resist upon exposure, and the acid reacts with the alkali-insoluble polymer to become alkali-soluble. This reaction is diffused to the bottom of the resist by the next heating step, and the polymer is dissolved in the exposed part and not dissolved in the unexposed part by the alkali developing step, so that a positive pattern is formed. However, when amine-based or organic gas is present in the chamber where the exposure is performed, the acid generated in the resist by the exposure reacts with these gases, and the acid disappears or loses its effectiveness. The reaction is hindered, and the upper portion of the pattern as shown in 9B of FIG. 2 (e) has a pattern shape that is not developed, and there is a problem that a desired pattern cannot be obtained. When an acid-based gas is present in the atmosphere in the chamber of the reduction projection exposure apparatus, the acid in the atmosphere reacts with the polymer in the resist, and becomes alkali-soluble in portions other than the exposed portion.
There is a problem that the pattern shape becomes overexposed as shown in FIG. 9C (f) and a desired pattern shape cannot be obtained.
【００１３】また、上記構成の従来の不純物除去装置を
縮小投影露光装置に用いる場合においても、除去すべき
対象不純物ガスが特定されておらず、また除去すべき不
純物の許容濃度が限定されていないため、実際の半導体
製造環境の空気中にはN2とO2以外のガス状不純物の種類
は多数存在しているのに対し、不純物除去方法が限定で
きず、また必要とされる不純物除去能力が不明であり、
実際の不純物制御装置の設計が不可能であるという問題
点があった。Further, even when the conventional impurity removing apparatus having the above structure is used in a reduction projection exposure apparatus, the target impurity gas to be removed is not specified, and the allowable concentration of the impurity to be removed is not limited. Therefore, although there are many types of gaseous impurities other than N 2 and O 2 in the air of the actual semiconductor manufacturing environment, the method of removing impurities cannot be limited, and the required impurity removal capability Is unknown,
There is a problem that it is impossible to design an actual impurity control device.
【００１４】本発明は、化学増幅型レジストを用いて微
細なパターンを形成する際に用いることができる縮小投
影露光装置の環境制御方法及び装置を提供することを目
的とする。An object of the present invention is to provide an environment control method and apparatus for a reduced projection exposure apparatus which can be used when forming a fine pattern using a chemically amplified resist.
【００１５】[0015]
【課題を解決するための手段】本発明は上記問題点を解
決するため、縮小投影露光装置チャンバの空気供給系
に、化学増幅型レジストの反応を阻害するようなアミン
系、酸系、有機系の不純物を除去する化学吸着剤を、チ
ャンバの空気中の上記不純物濃度が1ng/l以下となるよ
うに設置すること、またはN2,Ar等の不活性ガスを露光
チャンバー内に供給することにより、露光が行なわれる
チャンバ内空気が化学増幅型レジストの反応を阻害しな
い不純物濃度に制御されているようにしたものである。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides an air supply system of a reduction projection exposure apparatus chamber, which comprises an amine-based, acid-based, or organic-based system that inhibits the reaction of a chemically amplified resist. By installing a chemical adsorbent that removes impurities in the chamber such that the impurity concentration in the air of the chamber is 1 ng / l or less, or by supplying an inert gas such as N 2 or Ar into the exposure chamber. The air in the chamber where exposure is performed is controlled to an impurity concentration that does not inhibit the reaction of the chemically amplified resist.
【００１６】[0016]
【作用】本発明は上記した構成によって、化学増幅型レ
ジストの露光が行なわれるチャンバ内空気はアミン系、
酸系、有機系の不純物が1ng/l以下に制御され、化学増
幅型レジストの露光後、空気中の不純物によって反応が
阻害および増進されることがないため、所望のパターン
形状を得ることができる。According to the present invention, the air in the chamber in which the exposure of the chemically amplified resist is performed is amine-based,
Acid-based and organic-based impurities are controlled to 1 ng / l or less, and after exposure of the chemically amplified resist, the reaction is not inhibited or promoted by impurities in the air, so that a desired pattern shape can be obtained. .
【００１７】[0017]
【実施例】以下本発明の実施例を図面を用いて詳細に説
明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１８】図１は、本発明の実施例を示す縮小投影露
光装置の環境制御装置の概略構成図である。FIG. 1 is a schematic configuration diagram of an environment control device of a reduction projection exposure apparatus showing an embodiment of the present invention.
【００１９】図１において、１は吸着剤ユニット、２は
露光が行なわれるチャンバ、６は温湿度制御システム、
７はHEPAフィルタである。In FIG. 1, 1 is an adsorbent unit, 2 is a chamber in which exposure is performed, 6 is a temperature and humidity control system,
7 is a HEPA filter.
【００２０】加圧送風機５により空気取り込み口４から
取り込まれた空気は、温湿度制御システム６で温湿度を
制御された後、吸着剤ユニット１、次にHEPAフィルタ７
を通り、チャンバ２内に流れ込む。吸着剤ユニットは化
学増幅型レジストの反応を阻害するアミン系、有機系の
ガスを除去する市販の化学吸着剤および、化学増幅型レ
ジストの反応を必要以上に促進する酸系のガスを除去す
る市販の化学吸着剤からなっている。アミン系ガスを除
去する吸着剤としては活性炭に還元剤を添着したもの
を、有機系ガスを除去するものとしては活性炭を、酸性
ガスを除去するものとしては活性アルミナに過マンガン
酸カリウムを添着した化学吸着剤を用いた。空気取り入
れ口の不純物濃度を考慮して、吸着剤ユニットを通過し
た後の露光チャンバー内の空気中の不純物濃度が1ng/l
以下となるように吸着剤量、風速、湿度などは最適値に
設定されている。The air taken in from the air inlet 4 by the pressure blower 5 is controlled in temperature and humidity by a temperature / humidity control system 6 and then adsorbent unit 1 and then HEPA filter 7
And flows into the chamber 2. The adsorbent unit is a commercially available chemical adsorbent that removes amine-based and organic gases that inhibit the reaction of chemically amplified resists, and a commercially available chemical adsorber that removes acid-based gases that unnecessarily promote the reaction of chemically amplified resists Consists of a chemical adsorbent. As an adsorbent for removing amine-based gases, activated carbon impregnated with a reducing agent was used, for removing organic gases, activated carbon was used, and for removing acidic gases, activated alumina was impregnated with potassium permanganate. A chemical adsorbent was used. Considering the impurity concentration in the air intake, the impurity concentration in the air in the exposure chamber after passing through the adsorbent unit is 1 ng / l.
The adsorbent amount, the wind speed, the humidity, and the like are set to optimal values so as to be as follows.
【００２１】これによりチャンバ内空気は、化学増幅型
レジストの反応を阻害および必要以上に増進する不純物
は1ng/l以下の濃度に制御されており、空気中の不純物
の影響を受けずに有効なパターンを得ることができる。Accordingly, the air in the chamber is controlled to a concentration of 1 ng / l or less for impurities which inhibit the reaction of the chemically amplified resist and unnecessarily enhance the reaction, and are effective without being affected by impurities in the air. You can get a pattern.
【００２２】以下、本発明を用いた場合と従来の場合の
パターン寸法の比較の実験について説明する。Hereinafter, a description will be given of an experiment for comparing the pattern size between the case using the present invention and the conventional case.
【００２３】ウエハに各々化学増幅型ポジレジストを1
μm塗布し、一方は本発明を用いた上記不純物を1ng/l以
下に制御したチャンバ内で、もう一方は従来のような不
純物制御を行なわないチャンバ内でそれぞれ露光し、そ
の雰囲気中で30分間放置した。マスクは０.５μmの線幅
の繰り返しパターンを用いた。 露光量、フォーカス等
の条件は同じに行なった。その後、95℃で90秒の加熱を
行ない2.38％のアルカリ水溶液60秒にて現像を行なっ
た。その後それぞれのウエハについてパターン寸法の測
長を行なった結果を（表１）に示す。Each wafer is provided with a chemically amplified positive resist.
μm coating, one is exposed in a chamber in which the impurity using the present invention is controlled to 1 ng / l or less, and the other is exposed in a chamber in which impurity control is not performed as in the prior art, and the exposure is performed for 30 minutes in the atmosphere. I left it. The mask used was a repeating pattern having a line width of 0.5 μm. The conditions such as the amount of exposure and focus were the same. Thereafter, heating was performed at 95 ° C. for 90 seconds, and development was performed with a 2.38% aqueous alkaline solution for 60 seconds. After that, the results of length measurement of the pattern dimensions for each wafer are shown in (Table 1).
【００２４】[0024]
【表１】 [Table 1]
【００２５】（表１）に示すように、従来のチャンバ内
で露光を行なった場合、露光によりレジスト中に発生し
た酸がチャンバー内空気中に存在するアミン系、有機系
不純物と反応することにより、減少する。そのためアル
カリ可溶性高分子生成反応が少なくなり、本来溶媒に対
して可溶性となるべきところが不溶性となり、目標寸法
に対して線幅は太くなる。As shown in Table 1, when exposure is performed in a conventional chamber, the acid generated in the resist by the exposure reacts with amine-based and organic impurities present in the air in the chamber. ,Decrease. For this reason, the reaction for forming an alkali-soluble polymer is reduced, and the portion that should be originally soluble in the solvent becomes insoluble, and the line width becomes larger than the target size.
【００２６】これに対し、本発明を用いて露光を行なっ
た場合、空気中の上記不純物は吸着剤により1ng/l以下
に制御されているため目標寸法どおりのパターンが得ら
れ、微細なパターンを精度良く形成することができる。On the other hand, when the exposure is performed by using the present invention, since the impurities in the air are controlled to 1 ng / l or less by the adsorbent, a pattern having a target size can be obtained, and a fine pattern can be obtained. It can be formed with high accuracy.
【００２７】また本発明を用いた実施例の場合のNH3濃
度と、本発明を用いない場合でNH3濃度を変化させた場
合の、NH3濃度とパターン寸法の測長結果を（表２）に
示す。実験方法は、ウエハに化学増幅型ポジレジストを
1μm塗布し、本発明を用いたNH 3濃度をを1ng/l以下に制
御したチャンバ内、およびNH3濃度を10ng/l、170ng/lに
調整したチャンバ内でそれぞれ露光し、その雰囲気中で
30分間放置した。マスクは０.５μmの線幅の繰り返しパ
ターンを用いた。 露光量、フォーカス等の条件は同じ
に行なった。その後、95℃で90秒の加熱を行ない2.38％
のアルカリ水溶液60秒にて現像を行なった。その後それ
ぞれのウエハについてパターン寸法の測長を行なった。In the embodiment using the present invention, NHThreeDark
And NH in the absence of the present inventionThreeWhen the concentration is changed
If, NHThreeTable 2 shows the measurement results of density and pattern dimensions.
Show. The experimental method used a chemically amplified positive resist on the wafer.
1 μm applied, NH using the present invention ThreeControl the concentration to 1 ng / l or less
Controlled chamber and NHThree10 ng / l, 170 ng / l
Exposure in the conditioned chamber
Left for 30 minutes. The mask is a repetitive pattern with a line width of 0.5 μm.
Turns were used. Same conditions such as exposure and focus
It went to. After that, heat at 95 ° C for 90 seconds to 2.38%
Was developed in an alkaline aqueous solution for 60 seconds. Then it
The pattern dimension was measured for each wafer.
【００２８】[0028]
【表２】 [Table 2]
【００２９】（表２）の結果により露光雰囲気中のNH3
濃度を1ng/l以下にすることにより、化学増幅型レジス
トの反応は妨げられることなく、目標どおりのパターン
寸法を得ることができる。According to the results shown in Table 2, NH 3 in the exposure atmosphere
By setting the concentration to 1 ng / l or less, the target pattern size can be obtained without hindering the reaction of the chemically amplified resist.
【００３０】なお、本実施例ではNH3濃度について述べ
たが、そのほかの酸系不純物、有機系不純物についても
同様である。In this embodiment, the NH 3 concentration is described, but the same applies to other acid-based impurities and organic-based impurities.
【００３１】また、本実施例では、マスクパターン寸法
として、０．５０μｍを用いたが、マスクのパターン寸
法及びパターン形状はどのようなものでも良いことは言
うまでもない。また、化学増幅型ネガレジスト及び従来
の光反応型レジストを用いた場合でも有効であり発明の
もたらす効果は図り知れない。In this embodiment, the mask pattern dimension is 0.50 μm, but it goes without saying that the mask pattern dimension and pattern shape may be any. In addition, even when a chemically amplified negative resist and a conventional photoreactive resist are used, the effect of the present invention cannot be achieved.
【００３２】また、本実施例ではチャンバー内不純物を
制御する方法として化学吸着剤を用いたが、チャンバー
内をN2,Ar等の不活性ガスで満たすことにより、上記不
純物を1ng/l以下に制御する場合も有効であることはい
うまでもない。In this embodiment, a chemical adsorbent is used as a method for controlling impurities in the chamber. However, by filling the chamber with an inert gas such as N 2 or Ar, the impurities can be reduced to 1 ng / l or less. It goes without saying that control is also effective.
【００３３】[0033]
【発明の効果】以上のように本発明は、化学増幅型レジ
ストの露光が行なわれるチャンバ内空気のアミン系、酸
系、有機系の不純物を1ng/l以下に制御することによ
り、化学増幅型レジストの露光後、空気中の不純物によ
って反応が阻害および必要以上に増進されることがない
ため、所望のパターン形状を得ることができる。As described above, the present invention provides a chemically amplified resist by controlling the concentration of amine, acid and organic impurities in the air in the chamber where the exposure of the chemically amplified resist is performed to 1 ng / l or less. After exposure of the resist, the reaction is not hindered and unnecessarily promoted by impurities in the air, so that a desired pattern shape can be obtained.
【図１】本発明の実施例における縮小投影露光装置の環
境制御装置の概略図FIG. 1 is a schematic diagram of an environment control device of a reduction projection exposure apparatus according to an embodiment of the present invention.
【図２】化学増幅型レジストの反応工程図FIG. 2 is a reaction process diagram of a chemically amplified resist.
【図３】従来の縮小投影露光装置の環境制御装置の概略
図FIG. 3 is a schematic view of an environment control device of a conventional reduction projection exposure apparatus.
【図４】従来のガス状不純物除去装置の概略図FIG. 4 is a schematic view of a conventional apparatus for removing gaseous impurities.
１ 吸着剤ユニット ２ チャンバ ３ 給気口 ４ 空気取り込み口 ５ 加圧送風機 ６ 温湿度制御システム ７ HEPAフィルタ ８ ウエハ ９ 化学増幅型レジスト 10 マスク 11 KrFエキシマレーザー 12 加熱 13 ガス状不純物除去手段 14 ベーク炉 15 ヒーター 16 排気口 DESCRIPTION OF SYMBOLS 1 Adsorbent unit 2 Chamber 3 Air supply port 4 Air intake port 5 Pressure blower 6 Temperature and humidity control system 7 HEPA filter 8 Wafer 9 Chemical amplification type resist 10 Mask 11 KrF excimer laser 12 Heating 13 Means for removing gaseous impurities 14 Bake furnace 15 Heater 16 Exhaust port
Claims (2)
置と、 前記装置内の半導体ウエハ処理領域に、外部環境から取
り込んだ空気を供給する空調装置と、 前記空調装置の内部もしくは、空調装置と外部環境との
間に配置されており、 前記外部環境から取り込んだ空気からアミン系、酸系、
有機系の不純物ガスを除去する除去装置あるいは、 前記半導体ウエハ処理領域に対して、N2,Ar等の不活性
ガスを供給する供給装置とを備えており、 前記縮小投影露光装置のウエハ処理領域の雰囲気のアミ
ン系、酸系、有機系の不純物ガス濃度が1ng/l以下とな
ることを特徴とする環境制御装置。1. A reduction projection exposure apparatus for exposing a semiconductor wafer, an air conditioner for supplying air taken from an external environment to a semiconductor wafer processing area in the apparatus, and an inside or an air conditioner of the air conditioner. It is located between the external environment and amine-based, acid-based,
A removing device for removing an organic impurity gas or a supply device for supplying an inert gas such as N 2 or Ar to the semiconductor wafer processing region; and a wafer processing region of the reduced projection exposure apparatus. An environmental control device characterized in that the concentration of an amine-based, acid-based, or organic-based impurity gas in an atmosphere of 1 g / l or less.
置において、 半導体ウエハ処理領域に対して外部環境から取り込んだ
空気を供給する工程と、 前記外部環境から取り込んだ空気からアミン系、酸系、
有機系の不純物ガスを除去する工程か、あるいは半導体
ウエハ処理領域に対して、N2,Ar等の不活性ガスを供給
する工程とを備え、 前記縮小投影露光装置のウエハ処理領域の雰囲気のアミ
ン系、酸系、有機系の不純物ガス濃度が1ng/l以下とな
ることを特徴とする環境制御方法。2. A reduced projection exposure apparatus for exposing a semiconductor wafer, comprising: supplying air taken from an external environment to a semiconductor wafer processing area;
A step of removing an organic impurity gas or a step of supplying an inert gas such as N 2 or Ar to the semiconductor wafer processing area, wherein the amine in the atmosphere of the wafer processing area of the reduction projection exposure apparatus is provided. An environmental control method, wherein the concentration of impurity gas of a system, an acid or an organic system is 1 ng / l or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5066512A JP2809038B2 (en) | 1992-03-25 | 1993-03-25 | Environmental control device and environmental control method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6676792 | 1992-03-25 | ||
| JP4-66767 | 1992-03-25 | ||
| JP5066512A JP2809038B2 (en) | 1992-03-25 | 1993-03-25 | Environmental control device and environmental control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0620906A JPH0620906A (en) | 1994-01-28 |
| JP2809038B2 true JP2809038B2 (en) | 1998-10-08 |
Family
ID=26407696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5066512A Expired - Lifetime JP2809038B2 (en) | 1992-03-25 | 1993-03-25 | Environmental control device and environmental control method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2809038B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06140299A (en) * | 1992-10-27 | 1994-05-20 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPH1140770A (en) * | 1997-07-18 | 1999-02-12 | Nec Corp | Method and device for manufacturing semiconductor device |
| US6313953B1 (en) * | 1999-01-15 | 2001-11-06 | Donaldson Company, Inc. | Gas chemical filtering for optimal light transmittance; and methods |
| US6897165B2 (en) | 2001-06-06 | 2005-05-24 | Matsushita Electric Industrial Co., Ltd. | Environmental control equipment/method of developing apparatus for developing light-exposed resist film with developer in wafer treating chamber |
| JP4291008B2 (en) * | 2003-02-04 | 2009-07-08 | 株式会社竹中工務店 | Experimental equipment for measuring chemical emissions |
| JP4342872B2 (en) * | 2003-08-12 | 2009-10-14 | Ｈｏｙａ株式会社 | Mask blank storage method, mask blank storage body, and mask blank manufacturing method |
| KR20050006085A (en) | 2003-07-08 | 2005-01-15 | 호야 가부시키가이샤 | Container for housing a mask blank, method of housing a mask blank, and mask blank package |
| CN107203239B (en) * | 2017-07-31 | 2022-07-22 | 东北农业大学 | Decoupling fuzzy control method for closed livestock and poultry breeding environment |
-
1993
- 1993-03-25 JP JP5066512A patent/JP2809038B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0620906A (en) | 1994-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3696156B2 (en) | Coating film heating apparatus and resist film processing method | |
| JP3595791B2 (en) | Semiconductor manufacturing equipment | |
| JP2809038B2 (en) | Environmental control device and environmental control method | |
| JPH11329951A (en) | Light source device and aligner | |
| JPH11204411A (en) | Coating development aligner | |
| JP2006245401A (en) | Aligner and device manufacturing method | |
| JP3433844B2 (en) | Filter device for exposure apparatus and projection exposure apparatus | |
| JPH08306599A (en) | Air purifying apparatus and aligner | |
| JP2005123651A (en) | Resist film processing apparatus and method of forming resist pattern | |
| JPH11111593A (en) | Environment control apparatus | |
| US5452052A (en) | Apparatus for exposing chemically amplified resist | |
| US6897165B2 (en) | Environmental control equipment/method of developing apparatus for developing light-exposed resist film with developer in wafer treating chamber | |
| JP3676315B2 (en) | ENVIRONMENT CONTROL DEVICE FOR DEVELOPING DEVICE AND ITS ENVIRONMENT CONTROL METHOD | |
| JPH0677114A (en) | Aligner | |
| JP2007096347A (en) | Rotation compensating device of processed substrate, processing device of resist film, method for compensating rotation of processed substrate, method for processing resist film | |
| JP3061980B2 (en) | Semiconductor exposure equipment | |
| JP3915205B2 (en) | Lithographic apparatus | |
| JPH06208947A (en) | Method and device for processing resist | |
| JP3271093B2 (en) | Pattern forming method and pattern forming apparatus | |
| WO2002067303A1 (en) | Exposure system, exposure device and device production method | |
| JPH10106939A (en) | Exposing system and substrate carrying method | |
| JPH1154402A (en) | Resist coating device | |
| JP2001141257A (en) | Environmental control device and device for manufacturing semiconductor | |
| JP2000133581A (en) | Semiconductor manufacturing device and method thereof | |
| JP4202962B2 (en) | Substrate processing method and semiconductor device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070731 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080731 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090731 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090731 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100731 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110731 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110731 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130731 Year of fee payment: 15 |