JP2807061B2 - Plating method, plating apparatus and cathode electrode apparatus for plating - Google Patents
Plating method, plating apparatus and cathode electrode apparatus for platingInfo
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- JP2807061B2 JP2807061B2 JP17785090A JP17785090A JP2807061B2 JP 2807061 B2 JP2807061 B2 JP 2807061B2 JP 17785090 A JP17785090 A JP 17785090A JP 17785090 A JP17785090 A JP 17785090A JP 2807061 B2 JP2807061 B2 JP 2807061B2
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- plating
- cathode electrode
- plated
- contact
- electrode device
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Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は、メッキ方法、メッキ装置及びメッキ用カソ
ード電極装置に関し、カソード電極装置として、メッキ
領域の面積に対応した面積の孔を有し、被メッキ物と面
接触する面とは反対側の面の内周端側に、接触面に対し
て30度以下の角度で傾斜する傾斜面を有するカソード電
極装置を用いることにより、メッキ領域内での電極密度
分布を均一化し、メッキ膜の組成及び膜厚を均一化でき
るようにすると共に、前述の角度範囲内における角度選
定によってメッキ膜の組成及び膜厚を制御できるように
したものである。The present invention relates to a plating method, a plating apparatus, and a cathode electrode apparatus for plating, the cathode electrode apparatus having a hole having an area corresponding to the area of a plating region, By using a cathode electrode device having an inclined surface inclined at an angle of 30 degrees or less with respect to the contact surface on the inner peripheral end side of the surface opposite to the surface to be plated, And the composition and thickness of the plating film can be made uniform, and the composition and thickness of the plating film can be controlled by selecting an angle within the above-mentioned angle range.
＜従来の技術＞ 各種電子部品用基板、IC用ウエハー、薄膜磁気ヘッド
用ウエハー等においては、被メッキ物である基板もしく
はウエハー上の限られた平面積内でメッキをしなければ
ならない。このような場合、被メッキ物の面上に、メッ
キ領域を囲むように、カソード電極装置を面接触させて
メッキを行なう。第６図は従来のこの種のメッキ方法及
びメッキ装置を示す図で、１は被メッキ物、２はカソー
ド電極装置、３は陽極、４はメッキ浴、５は電源装置で
ある。<Prior Art> In various electronic component substrates, IC wafers, thin film magnetic head wafers, and the like, plating must be performed within a limited plane area on the substrate or wafer to be plated. In such a case, the cathode electrode device is brought into surface contact with the surface of the object to be plated so as to surround the plating region, and plating is performed. FIG. 6 shows a conventional plating method and a plating apparatus of this type, wherein 1 is an object to be plated, 2 is a cathode electrode device, 3 is an anode, 4 is a plating bath, and 5 is a power supply device.
被メッキ物１は、例えば各種電子部品用基板、IC用ウ
エハーまたは薄膜磁気ヘッド用ウエハー等である。The object 1 to be plated is, for example, various electronic component substrates, IC wafers, thin film magnetic head wafers, and the like.
カソード電極装置２は、電気伝導性の良好な金属板を
用いて構成されており、被メッキ物１の一面上のメッキ
領域の面積に対応した面積の孔21を有しており、孔21の
周りの内周面22は、その全厚みにわたって、ほぼ直角な
壁面となっている。カソード電極装置２はメッキ浴４が
濡れないように、被メッキ物１の面上に密接に面接触し
て配置される。６はネジ等の結合具、７は支持板であ
る。結合具６はカソード電極装置２を支持板７に締付け
固定している。The cathode electrode device 2 is formed using a metal plate having good electrical conductivity, and has a hole 21 having an area corresponding to the area of a plating region on one surface of the workpiece 1. The surrounding inner peripheral surface 22 has a substantially perpendicular wall surface over the entire thickness. The cathode electrode device 2 is arranged in close surface contact on the surface of the workpiece 1 so that the plating bath 4 is not wet. Reference numeral 6 denotes a coupling such as a screw, and 7 denotes a support plate. The coupling 6 clamps and fixes the cathode electrode device 2 to the support plate 7.
メッキ浴４は、得ようとするメッキ膜に応じた浴組成
となっており、メッキ槽内に収納されている。電源装置
５は、カソード電極装置２が取付けられている支持板７
と、陽極電極３との間に接続されている。The plating bath 4 has a bath composition according to the plating film to be obtained, and is contained in a plating tank. The power supply device 5 includes a support plate 7 on which the cathode electrode device 2 is mounted.
And the anode electrode 3.
＜発明が解決しようとする課題＞ しかしながら、上述した従来のメッキ装置は、カソー
ド電極装置２として、孔21を囲む内周面22が、全厚みに
わたってほぼ直角な壁面となっているために、エッジ22
1の部分に電界が集中し、電流密度分布が不均一になる
という問題がある。第７図は被メッキ物１の面における
電流密度分布を三次元的に示す図である。被メッキ物１
としては薄膜磁気ヘッド用ウエハーを用いた。図におい
て、横軸に被メッキ物１の中心を基準値０にした位置
（mm）をとってあり、縦軸に電流値（mA）をとってあ
る。電流密度分布は±1.7％であり、かなり大きな変動
を生じていることがわかる。<Problems to be Solved by the Invention> However, in the above-described conventional plating apparatus, the inner peripheral surface 22 surrounding the hole 21 is a substantially right-angled wall surface over the entire thickness as the cathode electrode device 2, so twenty two
There is a problem that the electric field concentrates on the portion 1 and the current density distribution becomes non-uniform. FIG. 7 is a diagram three-dimensionally showing the current density distribution on the surface of the object 1 to be plated. Plated object 1
Was used as a thin film magnetic head wafer. In the figure, the horizontal axis represents the position (mm) where the center of the object 1 to be plated is set to the reference value 0, and the vertical axis represents the current value (mA). The current density distribution is ± 1.7%, which indicates that a considerable variation has occurred.
電流密度分布が不均一になると、メッキ膜組成にバラ
ツキを生じると共に、膜厚が変動する。When the current density distribution becomes non-uniform, the plating film composition varies, and the film thickness varies.
そこで、本発明の課題は、上述する従来の問題点を解
決し、メッキ領域内での電流密度分布を均一化し、メッ
キ膜の組成及び膜厚を均一化できるようにすると共に、
前述の角度範囲内における角度選定によってメッキ膜の
組成及び膜厚を制御できる手段を提供することである。Therefore, an object of the present invention is to solve the conventional problems described above, to make the current density distribution in the plating region uniform, and to make the composition and thickness of the plating film uniform,
It is an object of the present invention to provide means for controlling the composition and thickness of a plating film by selecting an angle within the above-mentioned angle range.
＜課題を解決するための手段＞ 上述した従来の問題点を解決するため、本発明は、被
メッキ物の面上に、メッキ領域を囲むように、カソード
電極装置を面接触させてメッキを行なう場合に、 前記カソード電極装置は、前記メッキ領域の面積に対
応した面積の孔を有しており、前記被メッキ物と面接触
する面とは反対側の面の内周端側に、接触面に対して30
度以下の角度で傾斜する傾斜面を有すること を特徴とする。<Means for Solving the Problems> In order to solve the above-described conventional problems, the present invention performs plating by bringing a cathode electrode device into surface contact with a surface of an object to be plated so as to surround a plating region. In this case, the cathode electrode device has a hole having an area corresponding to the area of the plating region, and a contact surface on an inner peripheral end side of a surface opposite to a surface in contact with the object to be plated. Against 30
It has a slope inclined at an angle of less than or equal to degrees.
＜作用＞ カソード電極装置の被メッキ物と面接触する面とは反
対側の面の内周端側に、接触面に対して30度以下の角度
で傾斜する傾斜面を有すると、メッキ領域内での電流密
度分布が均一化される。このため、メッキ膜の組成及び
膜厚の分布が均一化される。傾斜面の角度が30度を超え
ると、メッキ膜の組成及び膜厚の分布が実用的に見て許
容できる範囲に入らなくなる。<Operation> If the cathode electrode device has an inclined surface inclined at an angle of 30 degrees or less with respect to the contact surface on the inner peripheral end side of the surface opposite to the surface to be contacted with the object to be plated, the plating area will , The current density distribution is made uniform. For this reason, the distribution of the composition and the thickness of the plating film is made uniform. If the angle of the inclined surface exceeds 30 degrees, the composition and the distribution of the film thickness of the plating film will not be within a practically acceptable range.
また、前述の角度範囲内における角度選定によって、
メッキ領域内での電流密度分布を制御し、メッキ膜の組
成及び膜厚を制御できる。Also, by selecting an angle within the aforementioned angle range,
By controlling the current density distribution in the plating region, the composition and thickness of the plating film can be controlled.
なお、膜厚分布改善を狙った先行技術としては、特開
昭58−182823号公報に開示された技術が知られている。
この先行技術は、被めっき面と対向するアノード電極部
に分布補正板を有し、対向する半導体ウエハーとアノー
ド電極間に第２の正電極板を設けることにより、第２の
正電極板を電気的に中性な構造体として作用させ、それ
によってめっき液の流を制御することにより、膜厚分布
を改善しようとするものである。従って、カソード電極
装置の形状に関する本発明とは異なる。As a prior art aimed at improving the film thickness distribution, a technique disclosed in Japanese Patent Application Laid-Open No. 58-182823 is known.
In this prior art, a distribution correction plate is provided on an anode electrode portion facing a surface to be plated, and a second positive electrode plate is provided between a semiconductor wafer and an anode electrode facing each other, thereby electrically connecting the second positive electrode plate. It is intended to improve the film thickness distribution by causing the plating solution to flow as a neutral structure, thereby controlling the flow of the plating solution. Therefore, the shape of the cathode electrode device is different from that of the present invention.
＜実施例＞ 第１図は本発明に係るメッキ装置の概略図である。図
において、第６図と同一の参照符合は同一性ある構成部
分を示している。８はカソード電極装置である。カソー
ド電極装置８は、第２図及び第３図にも示すように、メ
ッキ領域の面積に対応した面積の孔81を有しており、被
メッキ物１と面接触する接触面82とは反対側の面83の内
周端側に、接触面82に対して30度以下の角度θで傾斜す
る傾斜面84を有する。傾斜面84は接触面82から、ある厚
みｄが残るように形成するのが望ましい。厚ｄが小さく
なるにつれて、内周端円の鋭さが増して一種の刃物状と
なり、メッキ処理後のカソード電極装置２の洗浄時等に
作業員が怪我をする危険性があるからである。カソード
電極装置８の形状は、円形状に限らない。楕円形状また
は多角形状等の他の形状であってもよい。孔81の形状も
同様である。第２図及び第３図において、参照符合85は
取付孔である。<Example> Fig. 1 is a schematic view of a plating apparatus according to the present invention. In the figure, the same reference numerals as those in FIG. 6 indicate identical components. 8 is a cathode electrode device. As shown in FIGS. 2 and 3, the cathode electrode device 8 has a hole 81 having an area corresponding to the area of the plating region, and is opposite to the contact surface 82 that makes surface contact with the object 1 to be plated. On the inner peripheral end side of the side surface 83, there is an inclined surface 84 inclined at an angle θ of 30 degrees or less with respect to the contact surface 82. It is preferable that the inclined surface 84 is formed so that a certain thickness d remains from the contact surface 82. This is because, as the thickness d decreases, the sharpness of the inner peripheral end circle increases and forms a kind of blade, and there is a risk that the worker may be injured when cleaning the cathode electrode device 2 after plating. The shape of the cathode electrode device 8 is not limited to a circular shape. Other shapes such as an elliptical shape or a polygonal shape may be used. The same applies to the shape of the hole 81. 2 and 3, reference numeral 85 is a mounting hole.
上述のように、被メッキ物１と面接触する接触面82と
は反対側の面83の内周端側に、接触面82に対して30度以
下の角度で傾斜する傾斜面84を有すると、メッキ領域内
での電流密度分布が均一化される。また、30度以下の角
度範囲内における角度選定によって、メッキ領域内での
電流密度分布を制御し、メッキ膜の組成及び膜厚を制御
できる。As described above, an inclined surface 84 that is inclined at an angle of 30 degrees or less with respect to the contact surface 82 is provided on the inner peripheral end side of the surface 83 opposite to the contact surface 82 that makes surface contact with the workpiece 1. In addition, the current density distribution in the plating area is made uniform. Further, by selecting an angle within an angle range of 30 degrees or less, the current density distribution in the plating region can be controlled, and the composition and thickness of the plating film can be controlled.
第４図は被メッキ物１の面内における電流分布特性を
示す図である。被メッキ物１としては薄膜磁気ヘッド用
ウエハーを用いた。横軸に被メッキ物１の中心を基準値
０とした位置（mm）をとり、縦軸に全電流平均値Iavに
対する各内位置の電流Ｉの比（I/Iav）をとってある。FIG. 4 is a diagram showing a current distribution characteristic in the plane of the object 1 to be plated. As the object to be plated 1, a thin film magnetic head wafer was used. The abscissa indicates the position (mm) with the center of the object 1 to be set as the reference value 0, and the ordinate indicates the ratio (I / Iav) of the current I at each inner position to the total current average value Iav.
曲線A0はカソード電極装置２を面83が被メッキ物１の
メッキ面と連続するように配置した場合に想定される理
想曲線である。曲線A10は傾斜面84の角度θが10度のと
きの特性、曲線A20は角度θが20度のときの特性、A45は
角度θが45度のときの特性をそれぞれ示している。図示
するように、傾斜面84の角度θが10度及び20度のとき
は、理想曲線A0にかなり近似した特性が得られる。特
に、角度θが10度のときは広い範囲で電流密度分布が均
一化されている。角度θが20度を超えると、電流密度分
布特性が若干悪くなるが、30度までは、実用上許容でき
る範囲内に収まる。Curve A 0 is ideal curve a cathode electrode unit 2 faces 83 is assumed when placed so as to be continuous with the plating surface of the object to be plated 1. Curve A 10 is characteristics when the angle θ is 10 degrees inclined surface 84, the curve A 20 is characteristics when the angle θ is 20 degrees, A 45 is the angle θ shows the characteristic when the 45 degrees, respectively. As shown, when the angle θ of the inclined surface 84 is 10 degrees and 20 degrees, characteristics significantly approximate to the ideal curve A 0 is obtained. In particular, when the angle θ is 10 degrees, the current density distribution is uniform over a wide range. When the angle θ exceeds 20 degrees, the current density distribution characteristics slightly deteriorate, but up to 30 degrees falls within a practically acceptable range.
これに対して、傾斜面84の角度θが45度になると、被
メッキ物１の中心からの位置が20mmを超える領域で、電
流密度分布が急激に悪くなる。On the other hand, when the angle θ of the inclined surface 84 becomes 45 degrees, the current density distribution rapidly deteriorates in a region where the position from the center of the workpiece 1 exceeds 20 mm.
第５図は被メッキ物１の面内における電流分布特性を
三次元的に示す図である、被メッキ物１は薄膜磁気ヘッ
ド用ウエハーである。従来の特性である第７図との比較
から電流分布特性の改善効果がビジュアルに確認でき
る。第５図では電流密度分布は±0.8％であり、第７図
の電流分布±1.7％よりも著しく改善されている。FIG. 5 is a diagram three-dimensionally showing a current distribution characteristic in the plane of the object 1 to be plated. The object 1 to be plated is a wafer for a thin-film magnetic head. The effect of improving the current distribution characteristics can be visually confirmed from comparison with FIG. 7 which is the conventional characteristic. In FIG. 5, the current density distribution is ± 0.8%, which is significantly improved from the current distribution of ± 1.7% in FIG.
＜発明の効果＞ 以上述べたように、本発明によれば、次のような効果
が得られる。<Effects of the Invention> As described above, according to the present invention, the following effects can be obtained.
（ａ）被メッキ物の面上に、メッキ領域を囲むように、
カソード電極装置を面接触させてメッキを行なう場合
に、カソード電極装置は、メッキ領域の面積に対応した
面積の孔を有していて、被メッキ物と面接触する面とは
反対側の面の内周端側に、接触面に対して30度以下の角
度で傾斜する傾斜面を有する構造としたから、メッキ領
域内での電流密度分布を均一化し、メッキ膜の組成及び
膜厚を均一化し得るメッキ方法、メッキ装置及びカソー
ド電極装置を提供できる。(A) On the surface of the object to be plated, so as to surround the plating area,
When performing plating by bringing the cathode electrode device into surface contact, the cathode electrode device has a hole having an area corresponding to the area of the plating region, and is formed on the surface opposite to the surface in contact with the object to be plated. The inner peripheral end has a structure that has an inclined surface that is inclined at an angle of 30 degrees or less with respect to the contact surface, so that the current density distribution in the plating area is uniform, and the composition and thickness of the plating film are uniform. It is possible to provide a plating method, a plating device, and a cathode electrode device that can be obtained.
（ｂ）30度の角度範囲内における角度選定によって、メ
ッキ領域内での電流密度分布を制御し、メッキ膜の組成
及び膜厚を制御し得るメッキ方法、メッキ装置及びカソ
ード電極装置を提供できる。(B) By selecting an angle within an angle range of 30 degrees, it is possible to provide a plating method, a plating apparatus, and a cathode electrode apparatus capable of controlling the current density distribution in the plating region and controlling the composition and thickness of the plating film.
第１図は本発明に係るメッキ方法及びメッキ装置の概略
図、第２図は同じくカソード電極装置の平面図、第３図
は同じくその正面断面図、第４図は本発明における被メ
ッキ物の面内における電流分布特性を示す図、第５図は
同じく被メッキ物の面内におけう電流分布特性を三次元
的に示す図、第６図は従来のメッキ方法に係るメッキ装
置の概略図、第７図は同じく被メッキ物の面内における
電流分布特性を三次元的に示す図である。 １……被メッキ物、３……陽極電極 ４……メッキ浴 ８……カソード電極装置 81……孔、82……接触面 83……接触面とは反対側の面 84……傾斜面FIG. 1 is a schematic view of a plating method and a plating apparatus according to the present invention, FIG. 2 is a plan view of the same cathode electrode apparatus, FIG. 3 is a front sectional view of the same, and FIG. FIG. 5 is a diagram showing current distribution characteristics in a plane, FIG. 5 is a diagram showing three-dimensional current distribution characteristics in a plane of an object to be plated, and FIG. 6 is a schematic diagram of a plating apparatus according to a conventional plating method. FIG. 7 is a view three-dimensionally showing the current distribution characteristics in the plane of the object to be plated. 1 ... plated object 3 ... anode electrode 4 ... plating bath 8 ... cathode electrode device 81 ... hole, 82 ... contact surface 83 ... surface opposite to the contact surface 84 ... inclined surface
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 富士巳 東京都中央区日本橋１丁目13番１号 テ ィーディーケイ株式会社内 (58)調査した分野(Int.Cl.6，ＤＢ名) C25D 17/06 - 17/12 C25D 7/12──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Fujimi Fujimi 1-1-13 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (58) Field surveyed (Int.Cl. 6 , DB name) C25D 17 / 06-17/12 C25D 7/12
Claims (3)
うに、カソード電極装置を面接触させてメッキを行なう
メッキ方法であって、 前記カソード電極装置は、前記メッキ領域の面積に対応
した面積の孔を有しており、前記被メッキ物と面接触す
る接触面とは反対側の面の内周端側に、接触面に対して
30度以下の角度で傾斜する傾斜面を有すること を特徴とするメッキ方法。1. A plating method for performing plating by bringing a cathode electrode device into surface contact with a surface of an object to be plated so as to surround a plating region, wherein the cathode electrode device corresponds to an area of the plating region. Has a hole of a predetermined area, on the inner peripheral end side of the surface opposite to the contact surface that makes surface contact with the object to be plated, with respect to the contact surface
A plating method having an inclined surface inclined at an angle of 30 degrees or less.
うに、カソード電極装置を面接触させてメッキを行なう
メッキ装置であって、 前記カソード電極装置は、前記メッキ領域の面積に対応
した面積の孔を有しており、前記被メッキ物と面接触す
る接触面とは反対側の面の内周端側に、接触面に対して
30度以下の角度で傾斜する傾斜面を有すること を特徴とするメッキ装置。2. A plating apparatus for performing plating by bringing a cathode electrode device into surface contact with a surface of an object to be plated so as to surround a plating region, wherein the cathode electrode device corresponds to an area of the plating region. Has a hole of a predetermined area, on the inner peripheral end side of the surface opposite to the contact surface that makes surface contact with the object to be plated, with respect to the contact surface
A plating apparatus having an inclined surface inclined at an angle of 30 degrees or less.
うに、面接触させて用いられるメッキ用カソード電極装
置であって、 前記メッキ領域の面積に対応した面積の孔を有してお
り、前記被メッキ物と面接触する面とは反対側の面の内
周端側に、接触面に対して30度以下の角度で傾斜する傾
斜面を有すること を特徴とするメッキ用カソード電極装置。3. A plating cathode electrode device used in surface contact on a surface of an object to be plated so as to surround a plating region, wherein the cathode electrode device has a hole having an area corresponding to the area of the plating region. A cathode electrode for plating characterized by having an inclined surface inclined at an angle of 30 degrees or less with respect to the contact surface on the inner peripheral end side of the surface opposite to the surface in contact with the object to be plated. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17785090A JP2807061B2 (en) | 1990-07-05 | 1990-07-05 | Plating method, plating apparatus and cathode electrode apparatus for plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17785090A JP2807061B2 (en) | 1990-07-05 | 1990-07-05 | Plating method, plating apparatus and cathode electrode apparatus for plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0466698A JPH0466698A (en) | 1992-03-03 |
| JP2807061B2 true JP2807061B2 (en) | 1998-09-30 |
Family
ID=16038196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17785090A Expired - Lifetime JP2807061B2 (en) | 1990-07-05 | 1990-07-05 | Plating method, plating apparatus and cathode electrode apparatus for plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2807061B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090260A (en) * | 1997-03-31 | 2000-07-18 | Tdk Corporation | Electroplating method |
| JP3257667B2 (en) | 1997-09-18 | 2002-02-18 | ティーディーケイ株式会社 | Electrode assembly, cathode device and plating device |
| JP3257668B2 (en) | 1997-09-18 | 2002-02-18 | ティーディーケイ株式会社 | Electrode assembly, cathode device and plating device |
| JP2009299128A (en) * | 2008-06-13 | 2009-12-24 | Panasonic Corp | Electroplating apparatus |
| EP2538285A4 (en) * | 2010-02-15 | 2015-07-22 | Citizen Holdings Co Ltd | Electronic clock |
-
1990
- 1990-07-05 JP JP17785090A patent/JP2807061B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0466698A (en) | 1992-03-03 |
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