JP2795904B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2795904B2 JP2795904B2 JP1138871A JP13887189A JP2795904B2 JP 2795904 B2 JP2795904 B2 JP 2795904B2 JP 1138871 A JP1138871 A JP 1138871A JP 13887189 A JP13887189 A JP 13887189A JP 2795904 B2 JP2795904 B2 JP 2795904B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- film
- capacitor
- nitride film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、半導体装置に関し、特にキャパシタを備え
た半導体装置に係わる。The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a capacitor.
（従来の技術） 従来、半導体装置、例えばダイナミックメモリの記憶
素子として機能するキャパシタの絶縁膜には、シリコン
基板を熱酸化して形成した酸化珪素膜（SiO2膜）が用い
られている。特に、ダイナミックメモリの高集積化に伴
いキャパシタの面積を縮小させつつ容量を増大させるこ
とが要望され、前記SiO2膜を薄膜化することが行われて
いる。しかしながら、SiO2膜を薄膜化すると膜の欠陥が
増大したり、或いは可動イオンの影響が大きくなったり
して再現性よく耐圧の良好な絶縁膜を得ることが困難で
あった。(Prior Art) Conventionally, a silicon oxide film (SiO 2 film) formed by thermally oxidizing a silicon substrate is used as an insulating film of a semiconductor device, for example, a capacitor functioning as a storage element of a dynamic memory. In particular, it has been demanded to increase the capacity while reducing the area of the capacitor with the high integration of the dynamic memory, and the SiO 2 film has been made thinner. However, when the thickness of the SiO 2 film is reduced, the number of defects in the film increases, or the influence of mobile ions increases, so that it is difficult to obtain an insulating film with good reproducibility and good breakdown voltage.
このようなことから、SiO2より誘電率の大きい窒化珪
素（Si3N4）を絶縁膜として用いたキャパシタが知られ
ている。具体的には、シリコン基板上に熱酸化によりSi
O2薄膜を形成し、この薄膜上にSiH4とNH3を原料ガスと
して減圧CVD法により窒化珪素膜を成膜した後、該窒化
珪素膜の表面を熱酸化してSiO2/Si3N4/SiO2の三層構造
の絶縁膜を形成し、更にこの絶縁膜上に多結晶シリコン
からなる電極を形成して前記基板を一方の電極とし、該
基板と前記電極の間に絶縁膜が配置された構造のキャパ
シタを作製する。かかるキャパシタでは、SiO2/Si3N4/S
iO2の三層構造の絶縁膜がSiO2換算で同厚さのSiO2膜を
絶縁膜とした場合に比べて平均的な絶縁破壊電界値が高
く、かつ耐圧特性が向上される。しかしながら、絶縁破
壊電界値が低いものもかなりあり、耐圧特性の良好なタ
イナミックメモリの歩留まりが低いという問題があっ
た。For this reason, a capacitor using silicon nitride (Si 3 N 4 ) having a higher dielectric constant than SiO 2 as an insulating film is known. Specifically, silicon is thermally oxidized on a silicon substrate.
An O 2 thin film is formed, and a silicon nitride film is formed on the thin film by a low pressure CVD method using SiH 4 and NH 3 as source gases, and then the surface of the silicon nitride film is thermally oxidized to form SiO 2 / Si 3 N An insulating film having a three-layer structure of 4 / SiO 2 is formed, an electrode made of polycrystalline silicon is formed on the insulating film, and the substrate is used as one electrode, and an insulating film is formed between the substrate and the electrode. A capacitor having the arranged structure is manufactured. In such a capacitor, SiO 2 / Si 3 N 4 / S
insulating film of three-layer structure of iO 2 has a higher average breakdown field value as compared with the case where the SiO 2 film of the same thickness in terms of SiO 2 was an insulating film, and the withstand voltage characteristics are improved. However, there is also a problem that the dielectric breakdown electric field value is considerably low, and the yield of a dynamic memory having good withstand voltage characteristics is low.
（発明が解決しようとする課題） 本発明は、上記従来の課題を解決するためになされた
もので、絶縁破壊電界値を高く、耐圧特性が優れたキャ
パシタを備えた高信頼性の半導体装置を提供しようとす
るものである。(Problems to be Solved by the Invention) The present invention has been made in order to solve the above-mentioned conventional problems, and provides a highly reliable semiconductor device including a capacitor having a high dielectric breakdown electric field value and excellent withstand voltage characteristics. It is something to offer.
［発明の構成］ （課題を解決するための手段） 本発明は、塩素を１×1020原子/cm3〜４×1020原子/c
m3含む窒化珪素膜を絶縁膜とするキャパシタを具備した
ことを特徴とする半導体装置である。[Constitution of the Invention] (Means for Solving the Problems) In the present invention, chlorine is added at 1 × 10 20 atoms / cm 3 to 4 × 10 20 atoms / c.
A semiconductor device including a capacitor using a silicon nitride film containing m 3 as an insulating film.
上記塩素を含む窒化珪素膜は、例えばSiH2Cl2とNH3を
原料ガスとした減圧CVD法により成膜される。かかる窒
化珪素膜中の塩素量を限定した理由は、その量を１×10
20原子/cm3未満にするとアルカリイオン等の可動イオン
のゲッタ効果が不十分となり耐圧特性の優れたキャパシ
タを得ることが困難となり、かといってその量が４×10
20原子/cm3をこえると窒化珪素の組成比が変化して耐圧
特性劣化を招くからである。The silicon nitride film containing chlorine is formed, for example, by a low pressure CVD method using SiH 2 Cl 2 and NH 3 as source gases. The reason for limiting the amount of chlorine in the silicon nitride film is that the amount is 1 × 10
If the concentration is less than 20 atoms / cm 3, the getter effect of mobile ions such as alkali ions will be insufficient, and it will be difficult to obtain a capacitor having excellent withstand voltage characteristics.
This is because if it exceeds 20 atoms / cm 3 , the composition ratio of silicon nitride changes, which causes deterioration in breakdown voltage characteristics.
また、上記絶縁膜は前記窒化珪素膜と、この窒化珪素
膜の片面又は両面に配置された酸化珪素膜とから構成さ
れる。このように絶縁膜を二層又は三層構造にする場合
には窒化珪素膜の厚さを40〜200Å、酸化珪素膜の厚さ
を40〜200Åとすることが望ましい。The insulating film includes the silicon nitride film and a silicon oxide film disposed on one or both surfaces of the silicon nitride film. When the insulating film has a two-layer or three-layer structure, the thickness of the silicon nitride film is preferably 40 to 200 mm, and the thickness of the silicon oxide film is preferably 40 to 200 mm.
（作用） 本発明によれば、キャパシタの絶縁膜として塩素を１
×1020原子/cm3〜４×1020原子/cm3含む窒化珪素膜を用
いることによって、絶縁膜中のアルカリイオン等の可動
イオンをゲッタすると共に、酸化等の熱処理工程で生じ
る欠陥を緩和する効果により再現性のよい絶縁破壊電界
値の向上による耐圧特性の向上化がなされたキャパシタ
を備えた半導体装置を得ることできる。(Operation) According to the present invention, 1% of chlorine is used as an insulating film of a capacitor.
By using a silicon nitride film containing × 10 20 atoms / cm 3 to 4 × 10 20 atoms / cm 3 , mobile ions such as alkali ions in the insulating film are gettered and defects generated in a heat treatment step such as oxidation are reduced. As a result, it is possible to obtain a semiconductor device including a capacitor in which the withstand voltage characteristic is improved by improving the dielectric breakdown field value with good reproducibility.
（実施例） 以下、本発明の実施例を図面を参照して詳細に説明す
る。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は、シリコン基板にキャパシタを作製した状態
を示す断面図であり、図中の１は５Ω／口のｐ型シリコ
ン基板であり、この基板１表面には塩化水素を添加した
ドライ酸素雰囲気で熱酸化することにより厚さ70ÅのSi
O2膜２が被覆されている。このSiO2膜２上には、減圧CV
D法により成膜された厚さ80Åの窒化珪素膜３が被覆さ
れている。窒化珪素膜は、下記第１表に示す原料ガス組
成（SiH2Cl2:NH3）、圧力及び温度の条件で成膜した。
また、同第１表には窒化珪素膜中の塩素量（厚さ500Å
に成膜した時の値）を蛍光Ｘ線法により定量分析した結
果を併記する。更に、シリコン基板上に下記第１表のＣ
の条件で厚さ500Åの窒化珪素膜を直接形成した構造の
ものをSIMSにより深さ方向に分析した時のCl等の濃度プ
ロファイルを第２図に示す。前記窒化珪素膜３表面に
は、微量の水蒸気を含むArガス中で酸化することにより
厚さ30ÅのSiO2膜４が形成されている。前記SiO2/Si3N4
/SiO2の三層構造の絶縁膜上には、多結晶シリコンンか
らなる電極５が設けられ、キャパシタを構成している。FIG. 1 is a cross-sectional view showing a state in which a capacitor is formed on a silicon substrate. In FIG. 1, reference numeral 1 denotes a 5Ω / port p-type silicon substrate, and the surface of the substrate 1 has a dry oxygen atmosphere to which hydrogen chloride is added. 70 mm thick Si by thermal oxidation
The O 2 film 2 is covered. On this SiO 2 film 2, a reduced pressure CV
The silicon nitride film 3 having a thickness of 80 ° formed by the method D is covered. The silicon nitride film was formed under the conditions of the source gas composition (SiH 2 Cl 2 : NH 3 ), pressure and temperature shown in Table 1 below.
Table 1 shows the amount of chlorine in the silicon nitride film (thickness 500 mm).
The result of quantitative analysis of the value obtained when the film was formed on the substrate by the fluorescent X-ray method is also shown. Further, C on the following Table 1 was placed on a silicon substrate.
FIG. 2 shows a concentration profile of Cl and the like when a silicon nitride film having a thickness of 500.degree. On the surface of the silicon nitride film 3, an SiO 2 film 4 having a thickness of 30 ° is formed by oxidation in an Ar gas containing a small amount of water vapor. The SiO 2 / Si 3 N 4
An electrode 5 made of polycrystalline silicon is provided on an insulating film having a three-layer structure of / SiO 2 to constitute a capacitor.
上記第１表に示すＡ〜Ｆの窒化珪素膜がSiO2膜で挾ま
れた絶縁膜を有する第１図図示のキャパシタについて破
壊電界が15MV/cm以上の良品頻度を測定した。その結果
を第３図に示す。この第３図から明らかなように塩素を
１×1020原子/cm3〜４×1020原子/cm3含む窒化珪素膜が
SiO2膜で挟まれた絶縁膜を有するキャパシタは前記塩素
量の範囲を外れる窒化珪素膜を有する同構造のキャパシ
タに比べて良品頻度が高く、高い歩留まりが得られるこ
とがわかる。 With respect to the capacitor shown in FIG. 1 having an insulating film in which the silicon nitride films A to F shown in Table 1 are sandwiched between SiO 2 films, the frequency of conforming products having a breakdown electric field of 15 MV / cm or more was measured. FIG. 3 shows the results. As is apparent from FIG. 3, a silicon nitride film containing 1 × 10 20 atoms / cm 3 to 4 × 10 20 atoms / cm 3 of chlorine is obtained.
It can be seen that the capacitor having the insulating film sandwiched between the SiO 2 films has a higher yield rate and a higher yield than the capacitor having the same structure having the silicon nitride film out of the above range of the chlorine amount.
［発明の効果］ 以上詳述した如く、本発明によれば絶縁破壊電界値が
高く、耐圧特性が優れたキャパシタを備えた高信頼性の
半導体装置を提供できる。[Effects of the Invention] As described above in detail, according to the present invention, a highly reliable semiconductor device including a capacitor having a high dielectric breakdown electric field value and excellent withstand voltage characteristics can be provided.
第１図は本発明の実施例におけるキャパシタを示す断面
図、第２図はシリコン基板上に第１表のＣの条件で厚さ
500Åの窒化珪素膜を直接形成した構造のものをSIMSに
より深さ方向に分析した時のCl等の濃度プロファイルを
示す説明図、第３図は本実施例の各キャパシタにおける
破壊電界が15MV/cm以上の良品頻度を示す特性図であ
る。 １……シリコン基板、２、４……SiO2膜、３……窒化珪
素膜、５……電極。FIG. 1 is a cross-sectional view showing a capacitor according to an embodiment of the present invention. FIG.
FIG. 3 is an explanatory view showing a concentration profile of Cl and the like when a structure having a silicon nitride film of 500 ° directly formed is analyzed in a depth direction by SIMS. FIG. 3 shows a breakdown electric field of each capacitor of this embodiment of 15 MV / cm. FIG. 9 is a characteristic diagram showing the above-mentioned non-defective product frequency. 1 ...... silicon substrate, 2, 4 ...... SiO 2 film, 3 ...... silicon nitride film, 5 ...... electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 守屋 孝彦 神奈川県川崎市幸区小向東芝町１番地 株式会社東芝総合研究所内 (56)参考文献 特開 昭62−174926（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 27/04 H01L 21/822──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Takahiko Moriya 1st place of Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba Research Institute, Inc. (56) References JP-A-62-174926 (JP, A) (58) ) Surveyed field (Int.Cl. 6 , DB name) H01L 27/04 H01L 21/822
Claims (3)
m3含む窒化珪素膜を絶縁膜とするキャパシタを具備した
ことを特徴とする半導体装置。(1) chlorine of 1 × 10 20 atoms / cm 3 to 4 × 10 20 atoms / c
A semiconductor device comprising a capacitor using a silicon nitride film containing m 3 as an insulating film.
化珪素膜の片面または両面に配置された酸化珪素膜とか
ら構成されることを特徴とする請求項１記載の半導体装
置。2. The semiconductor device according to claim 1, wherein said insulating film comprises said silicon nitride film and a silicon oxide film disposed on one or both sides of said silicon nitride film.
スとするCVD法により形成されることを特徴とする請求
項１または２記載の半導体装置。3. The semiconductor device according to claim 1, wherein the silicon nitride film is formed by a CVD method using SiH 2 Cl 2 and NH 3 as source gases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138871A JP2795904B2 (en) | 1989-05-31 | 1989-05-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138871A JP2795904B2 (en) | 1989-05-31 | 1989-05-31 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH033357A JPH033357A (en) | 1991-01-09 |
| JP2795904B2 true JP2795904B2 (en) | 1998-09-10 |
Family
ID=15232061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1138871A Expired - Lifetime JP2795904B2 (en) | 1989-05-31 | 1989-05-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2795904B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333547B1 (en) | 1999-01-08 | 2001-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2776726B2 (en) * | 1993-09-21 | 1998-07-16 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6300187B2 (en) | 1998-11-24 | 2001-10-09 | Micron Technology, Inc. | Capacitor and method of forming a capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62244165A (en) * | 1986-04-16 | 1987-10-24 | Nec Corp | Manufacture of semiconductor device |
-
1989
- 1989-05-31 JP JP1138871A patent/JP2795904B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333547B1 (en) | 1999-01-08 | 2001-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US7060555B2 (en) | 1999-01-08 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US7129132B2 (en) | 1999-01-08 | 2006-10-31 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| USRE46122E1 (en) | 1999-01-08 | 2016-08-23 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH033357A (en) | 1991-01-09 |
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