JP2794253B2 - Material for exposure mask - Google Patents
Material for exposure maskInfo
- Publication number
- JP2794253B2 JP2794253B2 JP23200292A JP23200292A JP2794253B2 JP 2794253 B2 JP2794253 B2 JP 2794253B2 JP 23200292 A JP23200292 A JP 23200292A JP 23200292 A JP23200292 A JP 23200292A JP 2794253 B2 JP2794253 B2 JP 2794253B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- exposure mask
- layer
- optical density
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 24
- 230000003287 optical effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 24
- 229910052804 chromium Inorganic materials 0.000 description 24
- 239000011651 chromium Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012946 outsourcing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、露光マスク用の素材に
関し、例えば、光学濃度の相違する複数のパターンを有
し、露光量を調べるステップタブレット等を製作するの
に使用される素材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for an exposure mask, for example, a material having a plurality of patterns having different optical densities and used for manufacturing a step tablet or the like for examining an exposure amount.
【０００２】[0002]
【従来の技術】従来、例えばステップタブレットのよう
に光学濃度の相違する複数のパターンを形成する場合
は、以下のように行われていた。2. Description of the Related Art Conventionally, a plurality of patterns having different optical densities, such as a step tablet, are formed as follows.
【０００３】即ち、図３（イ）に示すように先ず透明基
盤７の全面に感光性レジスト8を塗布し、リソグラフィ
工程により、同図（ロ）に示すように、光学濃度0.2 の
パターン9に相当する部分のレジスト8を現像除去し、同
図（ハ）に示すように、金属層10を光学濃度0.2 となる
ように基盤７全面に蒸着する。その後、レジストを溶解
する溶液に浸すことにより、リフトオフを行い、同図
（ニ）に示すように、パターン9に相当する部分のみを
基盤上に形成する。That is, as shown in FIG. 3A, a photosensitive resist 8 is first applied to the entire surface of the transparent substrate 7, and a pattern 9 having an optical density of 0.2 is formed as shown in FIG. The corresponding portion of the resist 8 is developed and removed, and a metal layer 10 is deposited on the entire surface of the base 7 so as to have an optical density of 0.2 as shown in FIG. Thereafter, lift-off is performed by immersing the resist in a solution for dissolving the resist, and only a portion corresponding to the pattern 9 is formed on the substrate as shown in FIG.
【０００４】次に同様に図４（イ）に示すように、光学
濃度0.3 のパターン11に相当する部分のレジストを現像
除去し、同図（ロ）に示すように、金属層10a を光学濃
度0.3 になるように基盤7全面に蒸着し、その後レジス
ト8を溶解する溶液に浸すことにより、リフトオフを行
い、同図（ハ）に示すように、パターン9,11に相当する
部分のみの金属膜10, 10a を基盤上に形成する。Next, similarly, as shown in FIG. 4A, the resist corresponding to the pattern 11 having an optical density of 0.3 is developed and removed, and as shown in FIG. 0.3 is deposited on the entire surface of the substrate 7, and then immersed in a solution that dissolves the resist 8, thereby performing lift-off. As shown in FIG. Form 10 and 10a on the base.
【０００５】このように、パターン形成時に、基盤7面
上でパターンの蒸着を順次繰り返して行い、光学濃度の
相違する複数のパターンを形成することで、ステップタ
ブレットを製作していた。As described above, when forming a pattern, a step tablet is manufactured by repeatedly repeating pattern deposition on the surface of the substrate 7 to form a plurality of patterns having different optical densities.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来のようにパターン形成時に、金属層を基盤全面に蒸着
する場合は、リフトオフを行うごとに金属層を基盤全面
に真空蒸着しなければならず、しかもリソグラフィ作業
は精密な位置合わせを必要とするために、その作業が煩
雑であるという問題があった。However, when a metal layer is vapor-deposited on the entire surface of the substrate at the time of pattern formation as in the prior art, the metal layer must be vacuum-deposited on the entire surface of the substrate every time lift-off is performed. In addition, since the lithography work requires precise alignment, there is a problem that the work is complicated.
【０００７】また、蒸着を行う蒸着装置は特殊な装置な
ので、マスクを製作するメーカーでは、通常設置してな
く、蒸着のみ外注しているのが現状である。そのため、
複数の遮光層を蒸着する場合は、透明基盤が該メーカー
と外注先の間を行き来し、基盤の品質保全に関して問題
があった。Further, since a vapor deposition apparatus for performing vapor deposition is a special apparatus, at present, manufacturers of masks usually outsource only vapor deposition without installing them. for that reason,
When depositing a plurality of light-shielding layers, the transparent substrate moves back and forth between the manufacturer and the subcontractor, and there is a problem with respect to the quality preservation of the substrate.
【０００８】さらに、ステップタブレットを上記の方法
で製作すると、そのパターンの光学濃度の順が入れ代わ
る可能性があるという欠点があった。Further, when the step tablet is manufactured by the above method, there is a disadvantage that the order of the optical density of the pattern may be changed.
【０００９】それ故に、本発明は以上のような問題点を
解消するためになされたもので、金属膜よりなる遮光層
を一度の真空蒸着で多層蒸着し、且つ露光マスクを正確
且つ容易に形成することができる露光マスク用の素材を
提供することを課題とする。SUMMARY OF THE INVENTION Therefore, the present invention has been made to solve the above-mentioned problems, and a light-shielding layer made of a metal film is multi-layer-deposited by one-time vacuum evaporation, and an exposure mask is accurately and easily formed. An object of the present invention is to provide a material for an exposure mask that can be used.
【００１０】[0010]
【課題を解決するための手段】本発明が、上記課題を解
決するための露光マスク用の素材としての特徴は、透明
基盤上に光学濃度の相違するパターンを形成する露光マ
スク用の素材において、露光マスク用の透明基盤2 にエ
ッチングにより除去可能な同一の材質の金属膜3,5,6 よ
りなる遮光層が三層以上積層され、且つ各遮光層間には
上層の遮光層をエッチングにより除去する際に下層の遮
光層を防護する防護膜4,4aが設けられてなることにあ
る。Means for Solving the Problems The present invention is characterized in that a material for an exposure mask for solving the above-mentioned problems is characterized in that a material for an exposure mask for forming a pattern having a different optical density on a transparent substrate is provided. Three or more light-shielding layers made of the same material metal films 3, 5, and 6 that can be removed by etching are laminated on the transparent substrate 2 for the exposure mask, and the upper light-shielding layer is removed by etching between the respective light-shielding layers. In this case, protective films 4, 4a for protecting the lower light shielding layer are provided.
【００１１】[0011]
【作用】上記構成からなる本発明の露光マスク用の素材
は、各遮光層間には上層の遮光層をエッチングにより除
去する際に下層の遮光層を防護する防護膜4,4aが設けら
れているので、リソグラフィー工程により所望箇所の上
層の遮光層6をエッチングにより除去しても、下層の遮
光層5までもがエッチングにより除去されることがな
い。その後、露出した下層の遮光層5を除去する操作を
繰り返すことにより、光学濃度の相違するパターンを形
成することができる。In the material for an exposure mask of the present invention having the above structure, protective films 4, 4a for protecting the lower light-shielding layer when the upper light-shielding layer is removed by etching are provided between the respective light-shielding layers. Therefore, even if the desired upper portion of the light shielding layer 6 is removed by etching in the lithography step, even the lower layer of the light shielding layer 5 is not removed by etching. Thereafter, by repeating the operation of removing the exposed lower light-shielding layer 5, patterns having different optical densities can be formed.
【００１２】このように、透明基盤に予め真空蒸着で三
層以上の金属膜より構成された遮光層3,5,6を蒸着する
ことにより、透明基盤上に容易に且つ正確に光学濃度の
相違するパターンを形成することができるのである。As described above, by previously depositing the light-shielding layers 3, 5, and 6 composed of three or more metal films on the transparent substrate by vacuum deposition, the difference in optical density can be easily and accurately formed on the transparent substrate. It is possible to form a desired pattern.
【００１３】[0013]
【実施例】本発明の一実施例について説明する。図１に
おいて、1は略矩形の露光マスク用の素材本体で、ガラ
スの透明基板2に三層の積層したクロム層が蒸着されて
いる。An embodiment of the present invention will be described. In FIG. 1, reference numeral 1 denotes a substantially rectangular material body for an exposure mask, in which a three-layered chromium layer is deposited on a glass transparent substrate 2.
【００１４】3は前記ガラス基盤2に蒸着した光学濃度0.
1 の最下層のクロム層を示し、その上面には酸化錫の防
護膜４が貼着している。5は該防護膜4の上面に積層した
光学濃度0.3 の中間第一層のクロム層を示し、該クロム
層5の上面には前記防護膜4と同様の防護膜4aが形成され
ている。6は該防護膜4aの上面に積層した光学濃度0.5
の最上層のクロム層を示す。尚、本実施例に於いて、ク
ロム層3,5,6が遮光層に相当する。Reference numeral 3 denotes an optical density of 0.
1 shows a lowermost chromium layer, on which a tin oxide protective film 4 is adhered. Reference numeral 5 denotes an intermediate first chromium layer having an optical density of 0.3 laminated on the upper surface of the protective film 4. On the upper surface of the chromium layer 5, a protective film 4a similar to the protective film 4 is formed. 6 is an optical density 0.5 laminated on the upper surface of the protective film 4a.
Shows the top chromium layer. In this embodiment, the chromium layers 3, 5, and 6 correspond to the light-shielding layers.
【００１５】次に、上記のような構成からなる露光マス
ク用の素材を用いて、光学濃度の相違する0,0.1,0.4,0.
9のパターンを有するステップタブレットを製作する場
合について説明する。Next, by using the material for the exposure mask having the above structure, the optical densities of 0, 0.1, 0.4, 0.
A case where a step tablet having nine patterns is manufactured will be described.
【００１６】先ず、光学濃度0.9 のパターンを形成する
場合は、図２（イ）に示すようにリソグラフィー工程に
より、クロム層6の相当する部分以外を現像処理し、そ
の後エッチング除去して光学濃度0.9 の層（最上層、中
間第一層及び最下層のクロム層3,5,6の積層）を形成す
る。この場合、クロム層6の下層のクロム層5の上面には
酸化錫の防護膜4aが貼着されているので、上層のクロム
層6をエッチングにより除去する際に、下層のクロム層5
まで除去されることがない。First, when a pattern having an optical density of 0.9 is formed, a portion other than the corresponding portion of the chromium layer 6 is developed by a lithography process as shown in FIG. (A laminate of the uppermost layer, the first intermediate layer, and the lowermost chromium layers 3, 5, and 6). In this case, since the tin oxide protective film 4a is adhered on the upper surface of the lower chromium layer 5 of the chromium layer 6, when removing the upper chromium layer 6 by etching, the lower chromium layer 5
It is not removed until.
【００１７】次に、光学濃度0.4 のパターンを形成する
場合は、図２（ロ）に示すようにリソグラフィー工程に
より、中間第一層のクロム層5の相当する部分と残存す
る最上層のクロム層6以外、つまり、光学濃度0.4,0.9に
相当する部分以外を現像処理し、その後防護膜4aをエッ
チング除去し、且つ中間第一層のクロム層5の所望箇所
以外をエッチング除去して光学濃度0.4 の層（中間第一
層及び最下層のクロム層3,5の積層）を形成する。この
場合も、最下層のクロム層3の上面には酸化錫が防護膜4
として貼着されているので、エッチングにより最下層の
クロム層3まで除去されることがない。Next, when a pattern having an optical density of 0.4 is formed, as shown in FIG. 2B, a portion corresponding to the intermediate first chromium layer 5 and the remaining uppermost chromium layer are formed by a lithography process. 6, that is, the portions other than the portions corresponding to the optical densities of 0.4 and 0.9 are subjected to a development treatment, and then the protective film 4a is removed by etching, and the portions other than the desired portion of the intermediate first chromium layer 5 are removed by etching. (Lamination of the first intermediate layer and the lowermost chromium layers 3 and 5). Also in this case, tin oxide is coated on the upper surface of the lowermost chromium layer 3 with the protective film 4.
Therefore, the lowermost chromium layer 3 is not removed by etching.
【００１８】次に、光学濃度0.1 のパターンを形成する
場合は、図２（ハ）に示すようにリソグラフィー工程に
より、最下層のクロム層３の相当する部分と残存する中
間第一層のクロム層5と残存する最上層のクロム層6以
外、つまり、光学濃度0.1,0.4,0.9に相当する部分以外
を現像処理し、その後防護膜4及びクロム層5をエッチン
グ除去して光学濃度0.1 の層を形成する。この場合、残
りのガラス面は光学濃度0に形成される。Next, when a pattern having an optical density of 0.1 is to be formed, a portion corresponding to the lowermost chromium layer 3 and the remaining intermediate chromium layer 3 are formed by a lithography step as shown in FIG. 5 and other than the remaining uppermost chromium layer 6, that is, portions other than the portions corresponding to the optical densities of 0.1, 0.4 and 0.9 are developed, and then the protective film 4 and the chromium layer 5 are removed by etching to form a layer having an optical density of 0.1. Form. In this case, the remaining glass surface is formed with an optical density of 0.
【００１９】このようのして、ガラス基盤２上に光学濃
度0,0.1,0.4,0.9 のパターンを有するステップタブレッ
トが製作されることとなる。In this manner, a step tablet having a pattern with an optical density of 0, 0.1, 0.4, 0.9 on the glass substrate 2 is manufactured.
【００２０】尚、上記実施例では、遮光層を三層積層し
て形成したが、、本発明の遮光層の積層の数はこれに限
定されるものでなく、要は、遮光層を三層以上積層して
形成していれば遮光層の積層する数は問うものでない。In the above embodiment, three light-shielding layers are laminated. However, the number of light-shielding layers according to the present invention is not limited to this. It does not matter how many light-shielding layers are stacked as long as they are stacked.
【００２１】又、上記実施例では、三層の積層した遮光
層の光学濃度0.1,0.3,0.5 に構成したが、本発明の遮光
層の光学濃度はこれに限定されるものでなく、例えば0.
2, 0.2, 0.2 の同一の光学濃度の遮光層を用いて構成し
てもよい。In the above embodiment, the optical density of the three-layered light-shielding layer is set to 0.1, 0.3, 0.5. However, the optical density of the light-shielding layer of the present invention is not limited to this. .
The light shielding layer may have the same optical density of 2, 0.2, and 0.2.
【００２２】尚、上記実施例では、金属膜をクロムで形
成し、該クロムに酸化錫の防護膜を蒸着したが、本発明
の遮光層の材質及び防護膜の材質はこれに限定されるも
のでなく、例えば金属膜をニッケル又は酸化鉄，インコ
ネルで形成し、防護膜を二酸化ケイ素又は酸化アルミの
皮膜で被覆してもよく、その材質は特に問うものでな
い。In the above embodiment, the metal film is formed of chromium, and the protective film of tin oxide is deposited on the chromium. However, the material of the light shielding layer and the material of the protective film of the present invention are not limited to this. Instead, for example, the metal film may be formed of nickel, iron oxide, or Inconel, and the protective film may be covered with a film of silicon dioxide or aluminum oxide, and the material is not particularly limited.
【００２３】更に、上記実施例では、透明基板２をガラ
スで形成したが、本発明の透明基板２の材質はこれに限
定されるものでなく、例えば透明のプラスチックで形成
されていてもよい。Further, in the above embodiment, the transparent substrate 2 is formed of glass, but the material of the transparent substrate 2 of the present invention is not limited to this, and may be formed of, for example, transparent plastic.
【００２４】更に、上記実施例では、露光マスク用の素
材本体１をステップタブレットに製作用に使用したが、
本発明の露光マスク用の素材本体１の使用これに限定さ
れるものでなく、例えば透過光量を変えて透過率の相違
する階調露光マスクとしても使用することができる。Further, in the above embodiment, the material body 1 for the exposure mask is used for manufacturing the step tablet.
Use of Material Main Body 1 for Exposure Mask of the Present Invention The present invention is not limited to this. For example, it can be used as a gradation exposure mask having different transmittances by changing the amount of transmitted light.
【００２５】[0025]
【発明の効果】叙上の様に、本発明の露光マスク用の素
材は、透明基盤に三層以上の金属膜よりなる遮光層を設
け、且つ各遮光層間に防護膜を設けているので、従来の
ように金属膜の蒸着を何度も繰り返すことなく、一度の
交互蒸着で素材を製造でき、該素材の遮光層を順次エッ
チング除去することにより透明基盤上に四パターン以上
の光学濃度の相違する露光マスクを容易に形成すること
ができるという特別顕著な効果がある。また、複数のパ
ターンを形成する場合に、遮光層の透過率の順序が入れ
代わるようなことがなく正確に行えるという利点があ
る。更に、蒸着装置のないマスクメーカーでも、従来の
ように蒸着を１つの金属膜の形成ごとに外注する無駄が
ないという利点がある。As described above, in the material for an exposure mask of the present invention, a light-shielding layer composed of three or more metal films is provided on a transparent substrate, and a protective film is provided between each light-shielding layer. The material can be manufactured by one-time alternate deposition without repeating the deposition of the metal film as in the past, and the optical density difference of four or more patterns on the transparent substrate is obtained by sequentially etching and removing the light-shielding layer of the material. This has a particularly remarkable effect that an exposure mask can be easily formed. Further, when a plurality of patterns are formed, there is an advantage that the order of the transmittance of the light shielding layer can be accurately changed without changing the order. Further, even a mask maker without a vapor deposition apparatus has an advantage that there is no waste of outsourcing vapor deposition every time a metal film is formed as in the related art.
【図１】本発明の一例としての露光マスク用の素材を示
す断面図。FIG. 1 is a cross-sectional view showing a material for an exposure mask as an example of the present invention.
【図２】露光マスク用の素材の使用状態を示し、
（イ），（ロ），（ハ）は断面図。FIG. 2 shows a use state of a material for an exposure mask,
(A), (B) and (C) are sectional views.
【図３】従来例を示す（イ），（ロ），（ハ），（ニ）
は断面図。FIG. 3 shows a conventional example (a), (b), (c), (d)
Is a sectional view.
【図４】従来例を示す（イ），（ロ），（ハ）は断面
図。FIGS. 4A, 4B and 4C are cross-sectional views showing a conventional example.
2…透明基盤、3,5,6…遮光層、4,4a…防護膜 2 ... Transparent substrate, 3,5,6 ... Shading layer, 4,4a ... Protective film
フロントページの続き (72)発明者 成澤 紀久也 東京都八王子市千人町２−７−５ フォ トプレシジョン株式会社内 (56)参考文献 特開 昭63−173053（ＪＰ，Ａ) 特開 平２−144536（ＪＰ，Ａ)Continuation of the front page (72) Inventor Kikuya Narusawa 2-7-5 Sennincho, Hachioji-shi, Tokyo Photo Precision Co., Ltd. (56) References JP-A-63-173053 (JP, A) JP-A-2 −144536 (JP, A)
Claims (1)
ンを形成する露光マスク用の素材において、露光マスク
用の透明基盤(2) にエッチングにより除去可能な同一の
材質の金属膜(3,5,6) よりなる遮光層が三層以上積層さ
れ、且つ各遮光層間には上層の遮光層をエッチングによ
り除去する際に下層の遮光層を防護する防護膜(4,4a)が
設けられてなることを特徴とする露光マスク用の素材。An exposure mask material for forming patterns having different optical densities on a transparent substrate, wherein a metal film (3,5) of the same material that can be removed by etching on the transparent substrate (2) for the exposure mask. , 6) are stacked in three or more layers, and a protective film (4, 4a) is provided between each of the light-shielding layers to protect the lower light-shielding layer when the upper light-shielding layer is removed by etching. A material for an exposure mask, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23200292A JP2794253B2 (en) | 1992-08-31 | 1992-08-31 | Material for exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23200292A JP2794253B2 (en) | 1992-08-31 | 1992-08-31 | Material for exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06175355A JPH06175355A (en) | 1994-06-24 |
| JP2794253B2 true JP2794253B2 (en) | 1998-09-03 |
Family
ID=16932406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23200292A Expired - Fee Related JP2794253B2 (en) | 1992-08-31 | 1992-08-31 | Material for exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2794253B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1746460B1 (en) * | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4770947A (en) * | 1987-01-02 | 1988-09-13 | International Business Machines Corporation | Multiple density mask and fabrication thereof |
| JPH02144536A (en) * | 1988-11-25 | 1990-06-04 | Nec Corp | Reticule for exposing |
-
1992
- 1992-08-31 JP JP23200292A patent/JP2794253B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06175355A (en) | 1994-06-24 |
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