JP2791298B2 - Microwave-excited plasma processing equipment - Google Patents
Microwave-excited plasma processing equipmentInfo
- Publication number
- JP2791298B2 JP2791298B2 JP7281685A JP28168595A JP2791298B2 JP 2791298 B2 JP2791298 B2 JP 2791298B2 JP 7281685 A JP7281685 A JP 7281685A JP 28168595 A JP28168595 A JP 28168595A JP 2791298 B2 JP2791298 B2 JP 2791298B2
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- JP
- Japan
- Prior art keywords
- chamber
- microwave
- ashing
- gas supply
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
等におけるエッチングやアッシングに用いられるマイク
ロ波励起プラズマ処理装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a microwave-excited plasma processing apparatus used for etching and ashing in the manufacture of semiconductor devices and the like.
【０００２】[0002]
【従来の技術】従来のマイクロ波励起プラズマ処理装置
としては、例えば図９に示すアッシングに適用されるダ
ウンフロー型の構造のものが知られている。すなわち、
真空チャンバ２１内は水平方向に配置したメッシュ状パ
ンチドメタルからなる拡散板２２によりプラズマ生成室
２３と処理室２４とに上下に区画されている。ガス供給
管２５は、前記チャンバ２１上部の前記プラズマ生成室
２３の側壁に形成されている。回転軸２６が下面に取り
付けられたウェハホルダ２７は、前記処理室２４内に回
転自在に配置されている。排気管２８は、前記処理室２
４が形成された前記チャンバ２１底部に取り付けられ、
かつ前記排気管２８の他端には真空ポンプのような排気
系（図示せず）が連結されている。石英ガラスからなる
誘電体窓２９は、前記チャンバ２１の上壁部に形成され
た開口部３０に取り付けられている。マイクロ波が導入
される矩形状の導波管３１は、前記誘電体窓２９を含む
前記チャンバ２１の上壁部に配置されている。前記導波
管３１は、前記誘電体窓２９に対向し、マイクロ波の電
界方向に沿う面（Ｈ面）に細長状の開口穴３２が形成さ
れている。2. Description of the Related Art As a conventional microwave-excited plasma processing apparatus, a down-flow type structure applied to ashing shown in FIG. 9 is known. That is,
The inside of the vacuum chamber 21 is vertically divided into a plasma generation chamber 23 and a processing chamber 24 by a diffusion plate 22 made of mesh-like punched metal arranged in a horizontal direction. The gas supply pipe 25 is formed on a side wall of the plasma generation chamber 23 above the chamber 21. A wafer holder 27 having a rotating shaft 26 attached to the lower surface is rotatably disposed in the processing chamber 24. The exhaust pipe 28 is connected to the processing chamber 2.
4 is attached to the bottom of the chamber 21 formed with
An exhaust system (not shown) such as a vacuum pump is connected to the other end of the exhaust pipe 28. A dielectric window 29 made of quartz glass is attached to an opening 30 formed in the upper wall of the chamber 21. A rectangular waveguide 31 into which microwaves are introduced is disposed on the upper wall of the chamber 21 including the dielectric window 29. The waveguide 31 has an elongated opening 32 formed on a surface (H surface) along the direction of the microwave electric field, facing the dielectric window 29.
【０００３】このようなマイクロ波励起プラズマ処理装
置において、真空チャンバ２１の処理室２４内のホルダ
２７上に被処理部材、例えばレジストパターンが表面に
形成されたウェハ３３を設置し、図示しない真空ポンプ
を作動して前記チャンバ２１内のガスを排気管２８を通
して排気する。同時に、処理ガス（例えば酸素ガス）を
ガス供給管２５を通して前記チャンバ２１上部のプラズ
マ生成室２３に供給する。前記チャンバ２１内が所定の
圧力になった時点でマイクロ波を導波管３１内に導入す
ることによって、前記チャンバ２１のプラズマ生成室２
３にプラズマが発生する。発生したプラズマは、拡散板
２２の開口を通して処理室２４に導入され、前記プラズ
マ中の活性な酸素原子が前記処理室２４内のホルダ２７
上に設置されたウェハ３３表面のレジストパターンと反
応して剥離する、いわゆるアッシングがなされる。In such a microwave-excited plasma processing apparatus, a member to be processed, for example, a wafer 33 having a resist pattern formed on the surface thereof is placed on a holder 27 in a processing chamber 24 of a vacuum chamber 21 and a vacuum pump (not shown) is provided. Is operated to exhaust the gas in the chamber 21 through the exhaust pipe 28. At the same time, a processing gas (eg, oxygen gas) is supplied to the plasma generation chamber 23 above the chamber 21 through the gas supply pipe 25. The microwave is introduced into the waveguide 31 at the time when the pressure in the chamber 21 reaches a predetermined pressure.
Plasma is generated in 3. The generated plasma is introduced into the processing chamber 24 through the opening of the diffusion plate 22, and active oxygen atoms in the plasma are transferred to the holder 27 in the processing chamber 24.
The so-called ashing, which is performed by reacting with the resist pattern on the surface of the wafer 33 installed thereon and peeling off, is performed.
【０００４】ところで、前記チャンバ２１内に配置され
る前記拡散板２２はその開口率および開口分布により前
記ウェハ３３表面のレジストパターンへの活性なラジカ
ルの供給を均一にしてアッシング速度をウェハ面内で均
一にする。また、プラズマからの輻射熱を避け、さらに
プラズマからのイオン照射等による前記ウェハ３３への
ダメージを防ぐ。The diffusion plate 22 disposed in the chamber 21 uniformly supplies active radicals to the resist pattern on the surface of the wafer 33 by the aperture ratio and the distribution of the aperture, thereby reducing the ashing speed in the wafer plane. Make it even. Further, radiation heat from the plasma is avoided, and damage to the wafer 33 due to ion irradiation from the plasma and the like is prevented.
【０００５】しかしながら、チャンバ内に拡散板を配置
すると処理に必要なラジカル、例えば酸素ラジカルも失
活するため、前記ウェハ表面のレジストパターンのアッ
シング速度が低下する。However, if a diffusion plate is disposed in the chamber, radicals required for processing, for example, oxygen radicals are also deactivated, and the ashing speed of the resist pattern on the wafer surface is reduced.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、拡散板を配
置せずに高速かつ均一な加工が可能で、さらに拡散板へ
のイオン照射に起因する金属やパーティクルによる汚染
発生を防止したマイクロ波励起プラズマ処理装置を提供
しようとするものである。SUMMARY OF THE INVENTION According to the present invention, there is provided a microwave processing apparatus capable of performing high-speed and uniform processing without disposing a diffusion plate, and preventing generation of contamination by metal and particles due to ion irradiation on the diffusion plate. An object is to provide an excited plasma processing apparatus.
【０００７】[0007]
【課題を解決するための手段】本発明に係わるマイクロ
波励起プラズマ処理装置は、上部にプラズマ生成室、お
よびこのプラズマ生成室の下方に形成され、被処理部材
が配置される処理室を有する真空チャンバと、前記プラ
ズマ生成室内に処理ガスを供給するための複数のガス供
給管と、前記チャンバの上壁部の開口に配置された誘電
体窓と、前記誘電体窓を含む前記チャンバの上壁部に配
置された矩形状の導波管と、を具備し、前記各ガス供給
管の出口部近傍の前記チャンバの内面には、前記各供給
管からのガスを前記誘電体窓の下面に向けて吹き出させ
るための遮蔽部がそれぞれ配置されていることを特徴と
するものである。SUMMARY OF THE INVENTION A microwave-excited plasma processing apparatus according to the present invention has a vacuum chamber having a plasma generation chamber at an upper portion and a processing chamber formed below the plasma generation chamber and in which a member to be processed is disposed. A chamber, a plurality of gas supply pipes for supplying a processing gas into the plasma generation chamber, a dielectric window disposed at an opening of an upper wall of the chamber, and an upper wall of the chamber including the dielectric window A rectangular waveguide disposed in a portion of the chamber, and the inner surface of the chamber near the outlet of each of the gas supply tubes directs gas from each of the supply tubes toward the lower surface of the dielectric window. And a shielding section for blowing out.
【０００８】[0008]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。図１は、本実施例のウェハ上のレジストの
アッシングに適用されるダウンフロー型のマイクロ波励
起プラズマ処理装置を示す概略図である。真空チャンバ
１内は、上部にプラズマ生成室２と下部に処理室３が形
成されている。４つのガス供給管４は、前記プラズマ生
成室２が形成された前記チャンバ１の側壁に等角度（９
０゜）で形成されている。回転軸５が下面に取り付けら
れたウェハホルダ６は、前記処理室３内に回転自在に配
置されている。排気管７は、前記処理室３が形成された
前記チャンバ１底部に取り付けられ、かつ前記排気管７
の他端には真空ポンプのような排気系（図示せず）が連
結されている。例えば石英ガラスからなる誘電体窓８
は、前記チャンバ１の上壁部に形成された開口部９に取
り付けられている。マイクロ波が導入される矩形状の導
波管１０は、前記誘電体窓８を含む前記チャンバ１の上
壁部に配置されている。前記導波管１０は、前記誘電体
窓８に対向し、マイクロ波の電界方向に垂直な面（Ｈ
面）に、細長状の開口穴１１が形成されている。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a schematic view showing a downflow type microwave-excited plasma processing apparatus applied to ashing of a resist on a wafer according to the present embodiment. In the vacuum chamber 1, a plasma generation chamber 2 is formed in an upper part, and a processing chamber 3 is formed in a lower part. The four gas supply pipes 4 are equiangular (9) on the side wall of the chamber 1 where the plasma generation chamber 2 is formed.
0 °). The wafer holder 6 with the rotating shaft 5 attached to the lower surface is rotatably disposed in the processing chamber 3. The exhaust pipe 7 is attached to the bottom of the chamber 1 in which the processing chamber 3 is formed.
The other end is connected to an exhaust system (not shown) such as a vacuum pump. For example, a dielectric window 8 made of quartz glass
Is attached to an opening 9 formed in the upper wall of the chamber 1. A rectangular waveguide 10 into which microwaves are introduced is disposed on the upper wall of the chamber 1 including the dielectric window 8. The waveguide 10 faces the dielectric window 8 and has a surface (H) perpendicular to the direction of the microwave electric field.
Surface), an elongated opening hole 11 is formed.
【０００９】上部が開口された箱形の遮蔽部１２は、図
２および図３に示すように前記各ガス供給管４の出口部
１３を囲むように前記チャンバ１の内面に取り付けられ
ている。なお、ガス供給管４の出口部１３中心から前記
誘電体窓８との距離Ａは、２〜２０ｍｍにすることが好
ましい。前記チャンバ１の内面と前記箱形の遮蔽部１２
の前面との距離Ｂは、１〜１０ｍｍにすることが好まし
い。また、前記ガス供給管４の出口部１３中心から前記
箱形の遮蔽部１２の底面との距離Ｃは、１〜１０ｍｍに
することが好ましい。さらに、前記ガス供給管４の出口
部１３中心から前記箱形の遮蔽部１２の側面との距離Ｄ
は、５ｍｍ前後にすればよい。A box-shaped shielding portion 12 having an open top is attached to the inner surface of the chamber 1 so as to surround the outlet portion 13 of each of the gas supply pipes 4 as shown in FIGS. The distance A from the center of the outlet 13 of the gas supply pipe 4 to the dielectric window 8 is preferably 2 to 20 mm. The inner surface of the chamber 1 and the box-shaped shielding portion 12
Is preferably 1 to 10 mm. The distance C from the center of the outlet 13 of the gas supply pipe 4 to the bottom of the box-shaped shield 12 is preferably 1 to 10 mm. Further, a distance D from the center of the outlet portion 13 of the gas supply pipe 4 to the side surface of the box-shaped shielding portion 12.
May be about 5 mm.
【００１０】次に、前述したマイクロ波励起プラズマ処
理装置によりレジストパターンが表面に形成されたウェ
ハをアッシングする方法を説明する。真空チャンバ１の
処理室３内のホルダ６上にレジストパターンが表面に形
成されたウェハ１４を設置し、図示しない真空ポンプを
作動して前記チャンバ１内のガスを排気管７を通して排
気する。同時に、酸素ガス（反応ガス）を４つのガス供
給管４を通して前記チャンバ１上部のプラズマ生成室２
に供給する。この時、前記ガス供給管４の出口部１３の
近傍のチャンバ１内面には図２に示すように上部が開口
された箱形の遮蔽部１２が出口部１３を囲むように取り
付けられている。このため、前記各ガス供給管４の出口
部１３から吹き出された酸素ガスは図２および図４に示
すように前記遮蔽部１２に遮蔽されて上方に向かう流れ
になる。さらに、酸素ガスはチャンバ１上壁部に配置さ
れた誘電体窓８の下面に沿って前記プラズマ生成室２の
中心に向かって供給される。このような酸素ガスの供給
において、前記チャンバ１内が所定の圧力になった時点
でマイクロ波を導波管１０内に導入することによって、
前記チャンバ１のプラズマ生成室２に均一なプラズマが
発生する。発生したプラズマは、処理室３内に導入さ
れ、前記プラズマ中の活性な酸素原子が前記処理室３内
のホルダ６上に設置されたウェハ１４表面のレジストパ
ターンと反応して剥離する、いわゆるアッシングがなさ
れる。Next, a method of ashing a wafer having a resist pattern formed on its surface by the above-described microwave-excited plasma processing apparatus will be described. A wafer 14 having a resist pattern formed on its surface is placed on a holder 6 in a processing chamber 3 of a vacuum chamber 1, and a gas in the chamber 1 is exhausted through an exhaust pipe 7 by operating a vacuum pump (not shown). At the same time, oxygen gas (reaction gas) is passed through four gas supply pipes 4 to the plasma generation chamber 2 above the chamber 1.
To supply. At this time, on the inner surface of the chamber 1 near the outlet portion 13 of the gas supply pipe 4, a box-shaped shielding portion 12 having an open upper portion is attached so as to surround the outlet portion 13, as shown in FIG. Therefore, the oxygen gas blown out from the outlet 13 of each of the gas supply pipes 4 is shielded by the shield 12 and flows upward as shown in FIGS. Further, oxygen gas is supplied to the center of the plasma generation chamber 2 along the lower surface of the dielectric window 8 arranged on the upper wall of the chamber 1. In supplying such an oxygen gas, a microwave is introduced into the waveguide 10 when the pressure in the chamber 1 reaches a predetermined pressure.
A uniform plasma is generated in the plasma generation chamber 2 of the chamber 1. The generated plasma is introduced into the processing chamber 3, and active oxygen atoms in the plasma react with a resist pattern on the surface of the wafer 14 installed on the holder 6 in the processing chamber 3 and peel off, that is, so-called ashing. Is made.
【００１１】したがって、本発明に係わるマイクロ波励
起プラズマ処理装置によれば拡散板を配置せずに、ウェ
ハ１４表面のレジストパターンを高速度で均一にアッシ
ングでき、さらに拡散板へのイオン照射に起因する金属
やパーティクルによるウェハの汚染を防止することがで
きる。Therefore, according to the microwave-excited plasma processing apparatus according to the present invention, the resist pattern on the surface of the wafer 14 can be uniformly ashed at a high speed without disposing a diffusion plate. The contamination of the wafer by the metal or particles can be prevented.
【００１２】事実、次のような実験により本発明のマイ
クロ波励起プラズマ処理装置が従来のマイクロ波励起プ
ラズマ処理装置に比べて高速度で均一にアッシングでき
ることを確認した。In fact, the following experiment confirmed that the microwave-excited plasma processing apparatus of the present invention can perform ashing at a higher speed and more uniformly than the conventional microwave-excited plasma processing apparatus.
【００１３】（実験例１）図２、図３に示すように上部
が開口された箱形の遮蔽部１２を４つのガス供給管４の
出口部１３（直径１ｍｍ）を囲むように真空チャンバ１
の内面に取り付けた。なお、ガス供給管４の出口部１３
中心から誘電体窓８との距離Ａを１０ｍｍ、前記チャン
バ１の内面と前記箱形の遮蔽部１２の前面との距離Ｂを
５ｍｍ、前記ガス供給管４の出口部１３中心から前記箱
形の遮蔽部１２の底面との距離Ｃを５ｍｍ、前記ガス供
給管４の出口部１３中心から前記箱形の遮蔽部１２の側
面との距離Ｄを５ｍｍ、とした。また、真空チャンバ１
のプラズマ生成室２の直径は２００ｍｍ、誘電体窓８の
直径は２４０ｍｍ、誘電体窓８の下面からホルダ６上面
までの距離を１２０ｍｍ、とした。さらにホルダ上に
は、全面にフォトレジスト膜が被覆されたウェハを設置
した。(Experimental Example 1) As shown in FIG. 2 and FIG. 3, a box-shaped shielding portion 12 having an open top is surrounded by a vacuum chamber 1 so as to surround outlet portions 13 (diameter 1 mm) of four gas supply pipes 4.
Attached to the inner surface of The outlet 13 of the gas supply pipe 4
The distance A from the center to the dielectric window 8 is 10 mm, the distance B between the inner surface of the chamber 1 and the front surface of the box-shaped shielding part 12 is 5 mm, and the distance between the center of the outlet part 13 of the gas supply pipe 4 and the box-shaped The distance C from the bottom surface of the shielding portion 12 was 5 mm, and the distance D from the center of the outlet portion 13 of the gas supply pipe 4 to the side surface of the box-shaped shielding portion 12 was 5 mm. In addition, vacuum chamber 1
The diameter of the plasma generation chamber 2 was 200 mm, the diameter of the dielectric window 8 was 240 mm, and the distance from the lower surface of the dielectric window 8 to the upper surface of the holder 6 was 120 mm. Further, on the holder, a wafer whose entire surface was covered with a photoresist film was placed.
【００１４】このような本発明のマイクロ波励起プラズ
マ処理装置を下記の条件でプラズマ生成室内にプラズマ
を発生させ、処理室内のホルダ上に設置した前記ウェハ
上のレジスト膜のアッシングを行った。このようなアッ
シングにおけるアッシング速度（黒丸）、アッシングば
らつき（丸）を求めた。その結果を図８に示す。アッシ
ングばらつき［σ］は、最大アッシング量（ｍａｘ）と
最小アッシング量（ｍｉｎ）から次式に従って求めた。The microwave-excited plasma processing apparatus of the present invention generates plasma in the plasma generation chamber under the following conditions, and ashing of the resist film on the wafer placed on the holder in the processing chamber. The ashing speed (black circle) and ashing variation (circle) in such ashing were determined. FIG. 8 shows the result. The ashing variation [σ] was obtained from the maximum ashing amount (max) and the minimum ashing amount (min) according to the following equation.
【００１５】σ＝［（ｍａｘ−ｍｉｎ）／（ｍａｘ＋ｍ
ｉｎ）］×１００（％） ＜プラズマ生成条件＞ マイクロ波出力 ；１ｋＷ 各供給管の酸素供給量；５０ｓｃｃｍ 圧力 ；７０Ｐａ （比較例１）遮蔽部を設けない以外、実験例１と同様な
条件でプラズマ生成室内にプラズマを発生させ、処理室
内のホルダ上に設置した前記ウェハ上のレジスト膜のア
ッシングを行った。このようなアッシングにおけるアッ
シング速度（黒丸）、アッシングばらつき（丸）を求め
た。その結果を図８に示す。なお、比較例１の酸素ガス
の供給は図５の矢印Ａのようになる。Σ = [(max−min) / (max + m)
in)] × 100 (%) <Plasma generation conditions> Microwave output; 1 kW Oxygen supply amount of each supply pipe; 50 sccm pressure; 70 Pa (Comparative Example 1) Except that no shielding part was provided, the same conditions as in Experimental Example 1 were used. Plasma was generated in the plasma generation chamber, and ashing of the resist film on the wafer placed on the holder in the processing chamber was performed. The ashing speed (black circle) and ashing variation (circle) in such ashing were determined. FIG. 8 shows the result. The supply of oxygen gas in Comparative Example 1 is as indicated by arrow A in FIG.
【００１６】（比較例２）図６に示すように左右の側壁
が開口された箱形の遮蔽部１５を４つのガス供給管の出
口部１３（直径１ｍｍ）を囲むように真空チャンバ１の
内面に取り付けた。ガス供給管の出口部１３と箱形の遮
蔽部１５との位置関係、真空チャンバの形状等は実験例
１と同様にした。このようなマイクロ波励起プラズマ処
理装置を下記の条件でプラズマ生成室内にプラズマを発
生させ、処理室内のホルダ上に設置した前記ウェハ上の
レジスト膜のアッシングを行い、アッシングにおけるア
ッシング速度（黒丸）、アッシングばらつき（丸）を求
めた。その結果を図８に示す。なお、比較例２の酸素ガ
スの供給は図５の矢印Ｂのようになる。(Comparative Example 2) As shown in FIG. 6, a box-shaped shielding portion 15 having left and right side walls opened is surrounded by the inner surface of the vacuum chamber 1 so as to surround the outlet portions 13 (diameter 1 mm) of the four gas supply pipes. Attached to. The positional relationship between the outlet portion 13 of the gas supply pipe and the box-shaped shielding portion 15, the shape of the vacuum chamber, and the like were the same as in Experimental Example 1. Such a microwave-excited plasma processing apparatus generates plasma in a plasma generation chamber under the following conditions, performs ashing of the resist film on the wafer placed on a holder in the processing chamber, and performs an ashing speed (black circle) in ashing. Ashing variation (circle) was determined. FIG. 8 shows the result. The supply of oxygen gas in Comparative Example 2 is as indicated by arrow B in FIG.
【００１７】（比較例３）図７に示すように上壁および
底部が開口された箱形の遮蔽部１６を４つのガス供給管
の出口部１３（直径１ｍｍ）を囲むように真空チャンバ
１の内面に取り付けた。ガス供給管の出口部１３と箱形
の遮蔽部１５との位置関係、真空チャンバの形状等は実
験例１と同様にした。このようなマイクロ波励起プラズ
マ処理装置を下記の条件でプラズマ生成室内にプラズマ
を発生させ、処理室内のホルダ上に設置した前記ウェハ
上のレジスト膜のアッシングを行い、アッシングにおけ
るアッシング速度（黒丸）、アッシングばらつき（丸）
を求めた。その結果を図８に示す。なお、比較例３の酸
素ガスの供給は図５の矢印Ｃのようになる。(Comparative Example 3) As shown in FIG. 7, a box-shaped shielding portion 16 having an open upper wall and a lower portion is formed so as to surround the outlet portions 13 (diameter 1 mm) of four gas supply pipes. Attached to the inner surface. The positional relationship between the outlet portion 13 of the gas supply pipe and the box-shaped shielding portion 15, the shape of the vacuum chamber, and the like were the same as in Experimental Example 1. Such a microwave-excited plasma processing apparatus generates plasma in a plasma generation chamber under the following conditions, performs ashing of the resist film on the wafer placed on a holder in the processing chamber, and performs an ashing speed (black circle) in ashing. Ashing variation (round)
I asked. FIG. 8 shows the result. The supply of oxygen gas in Comparative Example 3 is as indicated by arrow C in FIG.
【００１８】図８から明らかなように本発明のマイクロ
波励起プラズマ処理装置（実験例１）は、比較例１〜３
のマイクロ波励起プラズマ処理装置に比べて高速で均一
なアッシングを行うことができることがわかる。As is apparent from FIG. 8, the microwave-excited plasma processing apparatus of the present invention (Experimental Example 1) is shown in Comparative Examples 1 to 3.
It can be seen that uniform ashing can be performed at a higher speed than in the microwave-excited plasma processing apparatus described above.
【００１９】また、本発明に係わるマイクロ波励起プラ
ズマ処理装置において、誘電体窓８の下面からホルダ６
上面までの距離を１２０ｍｍ以上にすることによってプ
ラズマ中のイオンがウェハに到達する前に再結合するた
め、イオン衝撃によるウェハへのダメージを防止するこ
とができる。In the microwave-excited plasma processing apparatus according to the present invention, the holder
By setting the distance to the upper surface to be 120 mm or more, ions in the plasma recombine before reaching the wafer, so that damage to the wafer due to ion bombardment can be prevented.
【００２０】なお、前述した実施例では４つのガス供給
管をプラズマ生成室に対応する真空チャンバの側壁に取
り付けたが、これに限定されず、２ないし３本または５
本以上取り付けてもよい。In the embodiment described above, four gas supply pipes are mounted on the side wall of the vacuum chamber corresponding to the plasma generation chamber. However, the present invention is not limited to this.
You may attach more than this.
【００２１】また、本発明に係わるマイクロ波励起プラ
ズマ処理装置はウェハ上のレジストパターンを剥離する
アッシングに限らず、ウェハおよびウェハ上の各種の被
膜のエッチング、各種膜のＣＶＤにも同様に適用するこ
とができる。The microwave-excited plasma processing apparatus according to the present invention is applicable not only to ashing for stripping a resist pattern on a wafer but also to etching of a wafer and various films on the wafer and CVD of various films. be able to.
【００２２】[0022]
【発明の効果】以上詳述したように、本発明に係わるマ
イクロ波励起プラズマ処理装置によれば拡散板を配置せ
ずに高速かつ均一な加工が可能で、さらに拡散板へのイ
オン照射に起因する金属やパーティクルによる汚染発生
を防止でき、ひいてはアッシングやエッチングを効率か
つ精度よく行うことができ等顕著な効果を奏する。As described above in detail, according to the microwave-excited plasma processing apparatus according to the present invention, high-speed and uniform processing can be performed without disposing a diffusion plate, and furthermore, it is possible to perform ion-irradiation on the diffusion plate. It is possible to prevent the occurrence of contamination due to metal or particles, thereby achieving remarkable effects such as efficient and accurate ashing and etching.
【図１】本発明の実施例のマイクロ波励起プラズマ処理
装置を示す概略図。FIG. 1 is a schematic diagram showing a microwave-excited plasma processing apparatus according to an embodiment of the present invention.
【図２】図１のガス供給管の出口部付近の構造を示す部
分拡大斜視図。FIG. 2 is a partially enlarged perspective view showing a structure near an outlet of the gas supply pipe of FIG. 1;
【図３】図１の要部断面図。FIG. 3 is a sectional view of a main part of FIG. 1;
【図４】図１のマイクロ波励起プラズマ処理装置におけ
る酸素ガスの流れを示す斜視図。FIG. 4 is a perspective view showing a flow of oxygen gas in the microwave-excited plasma processing apparatus of FIG. 1;
【図５】比較例１〜３のマイクロ波励起プラズマ処理装
置における酸素ガスの流れを示す斜視図。FIG. 5 is a perspective view showing the flow of oxygen gas in the microwave-excited plasma processing apparatuses of Comparative Examples 1 to 3.
【図６】比較例２のガス供給管の出口部付近の構造を示
す部分拡大斜視図。FIG. 6 is a partially enlarged perspective view showing a structure near an outlet of a gas supply pipe of Comparative Example 2.
【図７】比較例２のガス供給管の出口部付近の構造を示
す部分拡大斜視図。FIG. 7 is a partially enlarged perspective view showing a structure near an outlet of a gas supply pipe of Comparative Example 2.
【図８】実験例１および比較例１〜３のマイクロ波励起
プラズマ処理装置におけるアッシング速度、アッシング
ばらつきを示す特性図。FIG. 8 is a characteristic diagram illustrating ashing speed and ashing variation in the microwave-excited plasma processing apparatuses of Experimental Example 1 and Comparative Examples 1 to 3.
【図９】従来のマイクロ波励起プラズマ処理装置を示す
概略図。FIG. 9 is a schematic diagram showing a conventional microwave-excited plasma processing apparatus.
１…真空チャンバ、２…プラズマ生成室、３…処理室、
４…ガス供給管、６…ホルダ、８…誘電体窓、１０…導
波管、１２…遮蔽部、１３…ガス供給管の出口部、１４
…ウェハ。1: vacuum chamber, 2: plasma generation chamber, 3: processing chamber,
4 gas supply pipe, 6 holder, 8 dielectric window, 10 waveguide, 12 shielding part, 13 outlet of gas supply pipe, 14
... wafers.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｈ 1/46 Ｈ０１Ｌ 21/302 Ｂ ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. 6 Identification code FI H05H 1/46 H01L 21/302 B
Claims (2)
ズマ生成室の下方に形成され、被処理部材が配置される
処理室を有する真空チャンバと、 前記プラズマ生成室内に処理ガスを供給するための複数
のガス供給管と、 前記チャンバの上壁部の開口に配置された誘電体窓と、 前記誘電体窓を含む前記チャンバの上壁部に配置された
矩形状の導波管と、を具備し、 前記各ガス供給管の出口部近傍の前記チャンバの内面に
は、前記各供給管からのガスを前記誘電体窓の下面に向
けて吹き出させるための遮蔽部がそれぞれ配置されてい
ることを特徴とするマイクロ波励起プラズマ処理装置。1. A vacuum chamber having a plasma generation chamber in an upper part, a processing chamber formed below the plasma generation chamber, and in which a member to be processed is arranged, and a plurality of vacuum chambers for supplying a processing gas into the plasma generation chamber. A gas supply pipe, a dielectric window disposed at an opening of an upper wall of the chamber, and a rectangular waveguide disposed at an upper wall of the chamber including the dielectric window. On the inner surface of the chamber near the outlet of each of the gas supply pipes, a shielding unit for blowing out the gas from each of the supply pipes toward the lower surface of the dielectric window is arranged. And a microwave-excited plasma processing apparatus.
なし、前記ガス供給管の出口部を囲むように前記チャン
バの内面に取り付けられることを特徴とする請求項１記
載のマイクロ波励起プラズマ処理装置。2. The microwave according to claim 1, wherein the shielding unit has a box shape with an open top, and is attached to an inner surface of the chamber so as to surround an outlet of the gas supply pipe. Excited plasma processing equipment.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7281685A JP2791298B2 (en) | 1995-10-30 | 1995-10-30 | Microwave-excited plasma processing equipment |
| DE69603930T DE69603930T2 (en) | 1995-10-30 | 1996-06-27 | Processing device using microwave-excited plasma |
| EP96110433A EP0777257B1 (en) | 1995-10-30 | 1996-06-27 | Microwave excitation plasma processing apparatus |
| KR1019960045179A KR100234813B1 (en) | 1995-10-30 | 1996-10-11 | Microwave plasma apparatus |
| US09/005,689 US5955382A (en) | 1995-10-30 | 1998-01-13 | Microwave excitation plasma processing apparatus and microwave excitation plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7281685A JP2791298B2 (en) | 1995-10-30 | 1995-10-30 | Microwave-excited plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09125267A JPH09125267A (en) | 1997-05-13 |
| JP2791298B2 true JP2791298B2 (en) | 1998-08-27 |
Family
ID=17642566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7281685A Expired - Fee Related JP2791298B2 (en) | 1995-10-30 | 1995-10-30 | Microwave-excited plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2791298B2 (en) |
-
1995
- 1995-10-30 JP JP7281685A patent/JP2791298B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09125267A (en) | 1997-05-13 |
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