JP2785614B2 - Cylinder type epitaxial layer growth equipment - Google Patents
Cylinder type epitaxial layer growth equipmentInfo
- Publication number
- JP2785614B2 JP2785614B2 JP4282552A JP28255292A JP2785614B2 JP 2785614 B2 JP2785614 B2 JP 2785614B2 JP 4282552 A JP4282552 A JP 4282552A JP 28255292 A JP28255292 A JP 28255292A JP 2785614 B2 JP2785614 B2 JP 2785614B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- bell jar
- epitaxial layer
- substrate
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Description
【0001】[0001]
【産業上の利用分野】本発明は、シリンダー型エピタキ
シャル層成長装置におけるサセプタとベルジャーとの組
合わせ構造に関する。The present invention relates to a combination of a susceptor and a bell jar in a cylinder type epitaxial layer growth apparatus.
Regarding the matching structure .
【0002】[0002]
【従来の技術】シリンダー型エピタキシャル層成長装置
は図7に示す構造を有しており、石英製のベルジャー2
1内にサセプタ22を回転自在に設け、このサセプタ2
2の側壁面に形成された円形凹部のポケット23にシリ
コン単結晶基板のような基板(図示せず)を仕込み、ヒ
ータ24によりベルジャー21を通してサセプタ22お
よび基板を加熱し、サセプタ22を回転させると共に、
エピタキシャル成長原料ガス25をベルジャー21内に
下向流で流過させることにより、前記基板上にエピタキ
シャル層を成長させるものである。2. Description of the Related Art A cylindrical epitaxial layer growing apparatus has a structure shown in FIG.
1, a susceptor 22 is rotatably provided in the susceptor 2.
A substrate (not shown) such as a silicon single crystal substrate is charged into a pocket 23 having a circular concave portion formed on the side wall surface of the susceptor 2, and the susceptor 22 and the substrate are heated by the heater 24 through the bell jar 21 to rotate the susceptor 22. ,
The epitaxial growth source gas 25 is allowed to flow downward in the bell jar 21 to grow an epitaxial layer on the substrate.
【0003】上記成長装置では、サセプタ22上の基板
に対峙するベルジャー21の側壁部分Rにおいて、ベル
ジャー21が直胴形をしているのに対し、サセプタ22
は基板を保持するために下底面が上底面よりも大きい多
角錐台状(側面は台形)となっている。このため、図9
に示すように、サセプタ22の外周面22aとベルジャ
ー21の内周面21aとの隙間面積(サセプタ外周の多
角形とベルジャー内周の円形とで囲まれた面積)は、ベ
ルジャーの側壁部分Rにおいて上方部ほど大きく、下方
部ほど小さくなっている。In the above-mentioned growth apparatus, the bell jar 21 has a straight body at the side wall portion R of the bell jar 21 facing the substrate on the susceptor 22, whereas the susceptor 22
Has a truncated polygonal pyramid shape (side surfaces are trapezoidal) in which the lower bottom surface is larger than the upper bottom surface to hold the substrate. Therefore, FIG.
As shown in FIG. 5, the gap area between the outer peripheral surface 22a of the susceptor 22 and the inner peripheral surface 21a of the bell jar 21 (the area surrounded by the polygon of the susceptor outer periphery and the circle of the inner periphery of the bell jar) is equal to the side wall portion R of the bell jar. The larger the upper part, the smaller the lower part.
【0004】ところで、シリンダー型エピタキシャル層
成長装置を用いて基板上にエピタキシャル層を成長する
場合、基板面内の膜厚分布は、図8に示すように一般に
基板31の中心点および外周部4点の計5点における
膜厚の最大値と最小値を用いて求められる〔フーリエ変
換赤外分光光度計(以下FTIRと称する)による測
定〕。ここで「外周部4点」とは図8の破線で示す、基
板輪郭線より5mm内側に位置する同心曲線C上に採っ
た4点,,およびであって、はオリエンテー
ションフラット部31aの中心点直下にあり、点と
を結ぶ直線と点とを結ぶ直線とが互いに直交するよ
うに、これらの点の位置が設定されている。When an epitaxial layer is grown on a substrate using a cylinder type epitaxial layer growth apparatus, the film thickness distribution in the substrate surface generally shows the center point and the outer peripheral portion of the substrate 31 as shown in FIG. [Measurement using a Fourier transform infrared spectrophotometer (hereinafter, referred to as FTIR)]. Here, "the four points on the outer peripheral portion" are four points taken on a concentric curve C located 5 mm inside the contour of the substrate, indicated by broken lines in FIG. 8, and are the center points of the orientation flat portion 31a. The positions of these points are set so that a straight line connecting the points and a straight line connecting the points are orthogonal to each other.
【0005】エピタキシャル基板では、上記5点におけ
る膜厚の最大値と最小値が近いほど好ましいことは言う
までもない。また、シリンダー型エピタキシャル層成長
装置において基板上のエピタキシャル層の膜厚を論じる
場合、サセプタ長軸方向の分布よりもサセプタ回転方向
の分布が問題になることが多く、図8に示すようにオリ
エンテーションフラット部31aを上側にして仕込んだ
場合、特に点,およびにおける膜厚を管理する必
要がある。この目的で、下記の[数1]で定義されるデ
ィッシング比Dを管理項目とする場合がある。このディ
ッシング比Dが1に近いほど望ましいことは勿論であ
る。In an epitaxial substrate, it is needless to say that the closer the maximum value and the minimum value of the film thickness are at the above five points, the better. Also, when discussing the thickness of the epitaxial layer on the substrate in the cylinder type epitaxial layer growth apparatus, the distribution in the susceptor rotation direction is more problematic than the distribution in the susceptor long axis direction, and as shown in FIG. In the case where the parts 31a are placed with the part 31a on the upper side, it is particularly necessary to control the film thickness at the point and the point. For this purpose, a dishing ratio D defined by the following [Equation 1] may be a management item. Needless to say, the dishing ratio D is preferably as close to 1 as possible.
【0006】[0006]
【数1】D=(a+b)/2c (但し、aは点における膜厚、bは点における膜
厚、cは点における膜厚である。)D = (a + b) / 2c (where a is the film thickness at the point, b is the film thickness at the point, and c is the film thickness at the point.)
【0007】ところで、図7に示すような3段型サセプ
タ22(一つの面に上、中、下3枚の基板を収納できる
もの)を備えたシリンダー型エピタキシャル層成長装置
では、同一の段位置に限って言えば上記ディッシング比
は、ベルジャー21内を流れる原料ガス25の流量が多
いほど小さくなることが知られているが、従来、エピタ
キシャル層成長操作1バッチ内のエピタキシャル層の膜
厚分布を均一にするために行われてきた管理手段は、サ
セプタ22の中段ポケット内の基板におけるディッシン
グ比が1となるように原料ガス流量を設定することのみ
であった。By the way, in a cylinder type epitaxial layer growth apparatus provided with a three-stage type susceptor 22 (one surface capable of accommodating three upper, middle and lower substrates) as shown in FIG. Although it is known that the dishing ratio becomes smaller as the flow rate of the raw material gas 25 flowing in the bell jar 21 increases, the thickness distribution of the epitaxial layer in one batch of the epitaxial layer growing operation is conventionally limited. The only management means that has been performed to make the substrate uniform is to set the flow rate of the source gas so that the dishing ratio of the substrate in the middle pocket of the susceptor 22 becomes 1.
【0008】[0008]
【発明が解決しようとする課題】しかし、一般的にディ
ッシング比はサセプタ上段、中段、下段の段位置により
異なるものであり、上段ほどディッシング比が小さく、
下段ほど大きくなる。その結果、上段では基板の中央部
が外周部に比較してシリコンエピタキシャル層が厚くな
り、逆に下段では中央部が外周部に比較して薄くなる現
象が生じる。そのため、バッチ内で最もエピタキシャル
層が厚くなるのは上段の中央部、反対に最もエピタキシ
ャル層が薄くなるのは下段の外周部となり、下記の[数
2]で定義されるバッチ内膜厚分布が8%を超えること
がしばしばであった。However, in general, the dishing ratio differs depending on the position of the upper, middle, and lower susceptors.
It becomes larger in the lower row. As a result, in the upper stage, the silicon epitaxial layer becomes thicker in the central portion of the substrate than in the outer peripheral portion, and conversely, in the lower stage, the central portion becomes thinner than the outer peripheral portion. Therefore, the thickest epitaxial layer in the batch is located at the center of the upper stage, and the thinnest epitaxial layer is located at the outer peripheral portion of the lower stage. Often more than 8%.
【0009】[0009]
【数2】バッチ内膜厚分布(%)=(Ta−Tb)×1
00/(Ta+Tb) (但し、Taはバッチ内の膜厚測定点中の最大値、Tb
は同最小値である。)## EQU2 ## In-batch film thickness distribution (%) = (Ta−Tb) × 1
00 / (Ta + Tb) (where Ta is the maximum value among the film thickness measurement points in the batch, Tb
Is the same minimum value. )
【0010】また、上記シリンダー型エピタキシャル層
成長装置では、下記の[数3]で定義される基板内膜厚
分布(面内エピタキシャル層厚分布)も大きくなるとい
う問題点があった。In addition, the above-described cylinder type epitaxial layer growth apparatus has a problem that the in-substrate film thickness distribution (in-plane epitaxial layer thickness distribution) defined by the following [Equation 3] also becomes large.
【0011】[0011]
【数3】基板内膜厚分布(%)=(Tm−Tn)×10
0/(Tm+Tn) (但し、Tmは基板内の膜厚測定点中の最大値、Tnは
同最小値である。)## EQU3 ## Film thickness distribution in substrate (%) = (Tm-Tn) × 10
0 / (Tm + Tn) (where Tm is the maximum value among the film thickness measurement points in the substrate, and Tn is the same minimum value.)
【0012】なお、上記バッチ内膜厚分布、および基板
内膜厚分布は前述の5点測定法(図8)により求められ
るものである。The thickness distribution in the batch and the thickness distribution in the substrate are obtained by the above-described five-point measurement method (FIG. 8).
【0013】上記説明で明らかなように、本発明が解決
しようとする課題は、図7に示すようなシリンダー型エ
ピタキシャル層成長装置において、サセプタの上、中、
下段のポケット間でのディッシング比の差を小さくする
ことにより、前記バッチ内膜厚分布及び基板内膜厚分布
を従来のものに比べて著しく小さくすることにある。As apparent from the above description, the problem to be solved by the present invention is to solve the above problems in the cylinder type epitaxial layer growth apparatus shown in FIG.
By reducing the difference in dishing ratio between the lower pockets, the thickness distribution in the batch and the thickness distribution in the substrate are significantly reduced as compared with the conventional one.
【0014】[0014]
【課題を解決するための手段】本発明者らは実験によ
り、図9に示すようにサセプタ22上の基板に対峙する
ベルジャー21の側壁部分Rにおいて、サセプタ22外
周面とベルジャー21内周面との隙間面積(サセプタ外
周の多角形とベルジャー内周の円形とで囲まれた面積)
と、ディッシング比との間に直線関係が成立することを
見出し、この知見に基づいて、前記サセプタ22の基板
仕込み位置、すなわち上、中、下段のポケット23の全
てにわたって前記隙間面積を均一にすればディッシング
比が各段とも等しくなると考え、さらに実験を重ねた結
果、本発明を完成したものである。According to experiments, the present inventors have conducted experiments on the outer peripheral surface of the susceptor 22 and the inner peripheral surface of the bell jar 21 at the side wall portion R of the bell jar 21 facing the substrate on the susceptor 22, as shown in FIG. Gap area (the area enclosed by the polygon around the susceptor and the circle around the bell jar)
And a dishing ratio, a linear relationship is established, and based on this finding, the gap area is made uniform over the substrate loading position of the susceptor 22, that is, over all of the upper, middle, and lower pockets 23. If the dishing ratio is assumed to be the same for each stage, and further experiments have been carried out, the present invention has been completed.
【0015】すなわち本発明は、基板保持用のポケット
を備えたサセプタをベルジャー内に設けたシリンダー型
エピタキシャル層成長装置において、前記サセプタを多
角錐台状に形成し、前記ベルジャーを少なくとも前記サ
セプタ上の基板に対峙するベルジャーの側壁部分におい
て僅かに下方に拡がった円筒状に形成し、前記サセプタ
外周面とベルジャー内周面との隙間面積を、少なくとも
サセプタ上の基板に対峙するベルジャーの側壁部分にお
いて等しくしたことを特徴とする。[0015] The present invention provides a cylinder-type epitaxial layer growth apparatus provided in the bell jar a susceptor provided with a pocket for the substrate holding multilingual said susceptor
It is formed in a truncated pyramid shape, and the bell jar is at least
On the side wall of the bell jar facing the substrate on the septa
The susceptor has an outer peripheral surface and a bell jar inner peripheral surface, and a clearance area between the outer peripheral surface and the inner peripheral surface of the bell jar is equal at least at a side wall portion of the bell jar facing the substrate on the susceptor.
【0016】つまり、サセプタとして多角錐台状のもの
を設けたシリンダー型エピタキシャル層成長装置におい
て、サセプタ外周面とベルジャー内周面との隙間面積を
サセプタ上の基板に対峙するベルジャー側壁部分におい
て等しくするために、ベルジャーの内径を下方ほど大き
くしたものである。前記ベルジャーは、前記サセプタの
幅が下方に向かって増加するのに対応させて、サセプタ
外周面とベルジャー内周面との距離を次第に小さくして
構成することが好ましい。 That is, a susceptor having a truncated polygonal pyramid shape
In a cylinder type epitaxial layer growth equipment equipped with
The gap area between the outer peripheral surface of the susceptor and the inner peripheral surface of the bell jar.
On the side wall of the bell jar facing the substrate on the susceptor
In order to make them equal, the inside diameter of the bell jar is increased toward the bottom. The bell jar is provided on the susceptor.
As the width increases downward, the susceptor
Gradually reduce the distance between the outer peripheral surface and the inner peripheral surface of the bell jar.
It is preferable to configure.
【0017】[0017]
【作用】ベルジャー内周面とサセプタ外周面との隙間面
積と、ディッシング比との関係については未だ詳細は不
明であるが、このディッシング比は、前記隙間面積によ
り決まるベルジャー内原料ガスの流速に関係するものと
推察される。ベルジャー内の原料ガス流は上方から下方
に流れる成分の他、サセプタの回転によりサセプタ回転
方向に流れる成分も考えられ、後者の成分がディッシン
グ比と関連していると思われる。すなわち、サセプタ上
部で隙間面積が大きければこの成分は小さく、逆にサセ
プタ下部で隙間面積が小さければこの成分は大きくな
り、回転方向の原料ガス流速の成分が大きくなればディ
ッシング比は大きくなるようである。The relationship between the gap area between the inner peripheral surface of the bell jar and the outer peripheral surface of the susceptor and the dishing ratio is not yet known, but the dishing ratio is related to the flow rate of the raw material gas in the bell jar determined by the gap area. It is presumed to do. The raw material gas flow in the bell jar may include a component flowing in the susceptor rotation direction due to the rotation of the susceptor in addition to a component flowing downward from above, and the latter component is considered to be related to the dishing ratio. That is, if the gap area is large at the upper part of the susceptor, this component is small, if the gap area is small at the lower part of the susceptor, this component is large, and if the component of the flow rate of the raw material gas in the rotation direction is large, the dishing ratio seems to be large. is there.
【0018】[0018]
【実施例】次に、本発明を実施例によりさらに詳細に説
明する。 実施例 図1はこの実施例の骨子を示すシリンダー型エピタキシ
ャル層成長装置の概略説明図であり、石英製ベルジャー
1は図2のように改造してその胴部内周面を、サセプタ
上の基板に対峙するベルジャーの側壁部分において円錐
状とし、サセプタ11は図3に示すように従来と同様の
六角錐台状の3段型としたものである。また、図2、3
において各部の寸法は「mm」の単位で示してあり、図
3において符号12はポケットを示している。Next, the present invention will be described in more detail with reference to examples. Embodiment 1 FIG. 1 is a schematic explanatory view of a cylinder type epitaxial layer growth apparatus showing the gist of this embodiment. A quartz bell jar 1 is modified as shown in FIG. As shown in FIG. 3, the susceptor 11 has a three-stage shape of a truncated hexagonal pyramid as shown in FIG. 2 and 3
In FIG. 3, the dimensions of each part are shown in units of “mm”, and in FIG. 3, reference numeral 12 indicates a pocket.
【0019】改造前のサセプタ中段ポケット中央位置に
おけるベルジャーとサセプタとの隙間は図5に示すよう
な形状をしており、その面積は386.7cm2 であっ
た。そこで、サセプタの上段ポケット中央位置および下
段ポケット中央位置における隙間面積が中段ポケット中
央位置における前記面積と等しくなるように、それぞれ
図4、6のとおりベルジャー1の内径を上段ポケット中
央位置に対応する箇所では336.8mm、下段ポケッ
ト中央位置に対応する箇所では358.7mmに設計し
た。実際には製作精度の関係で、ベルジャー1の内径は
サセプタの上、中、下段ポケット中央位置に対応する箇
所でそれぞれ337.0、347.5、358.5mm
であった。そして、図2における「内径変更区間」に
上、中、下段ポケットの全体が位置するように図3のサ
セプタ11を配置して、この実施例のシリンダー型エピ
タキシャル層成長装置を構成した。The gap between the bell jar and the susceptor at the center of the middle pocket of the susceptor before remodeling had a shape as shown in FIG. 5, and its area was 386.7 cm 2 . Therefore, as shown in FIGS. 4 and 6, the inner diameter of the bell jar 1 is changed to a position corresponding to the center position of the upper pocket so that the clearance area at the center position of the upper pocket and the center position of the lower pocket is equal to the area at the center position of the middle pocket. Was designed to be 336.8 mm, and 358.7 mm at the position corresponding to the center position of the lower pocket. Actually, due to the manufacturing accuracy, the inner diameter of the bell jar 1 is 337.0, 347.5, and 358.5 mm at positions corresponding to the center positions of the upper, middle, and lower pockets of the susceptor, respectively.
Met. Then, the susceptor 11 of FIG. 3 was arranged such that the entire upper, middle, and lower pockets were located in the “inner diameter changing section” in FIG. 2, thereby configuring the cylinder type epitaxial layer growth apparatus of this embodiment.
【0020】この成長装置を用いて125mmφ、CZ
−高濃度N型<100>シリコン単結晶基板、厚さ=6
00μmを18枚、サセプタ11に仕込み、1130
℃、1.0μm/minの成長速度で10.0μmのエ
ピタキシャル層を成長させた。この反応を2バッチ行
い、各基板のエピタキシャル層厚を前述の方法で5点ず
つFTIRを用いて測定したところ、1バッチ目では基
板内膜厚分布は最大値が3.32%、最小値が1.27
%であり、バッチ内膜厚分布は4.03%であった。ま
た、2バッチ目では18枚中、基板内膜厚分布は最大値
が3.57%、最小値が0.83%であり、バッチ内膜
厚分布は4.39%であった。Using this growth apparatus, 125 mmφ, CZ
-High concentration N-type <100> silicon single crystal substrate, thickness = 6
18 sheets of 00 μm were charged into the susceptor 11 and 1130
An epitaxial layer of 10.0 μm was grown at 1.0 ° C. at a growth rate of 1.0 μm / min. This reaction was carried out in two batches, and the epitaxial layer thickness of each substrate was measured by FTIR for each of the five points by the above-described method. 1.27
%, And the thickness distribution in the batch was 4.03%. In the second batch, out of the 18 sheets, the maximum value of the film thickness distribution in the substrate was 3.57%, the minimum value was 0.83%, and the film thickness distribution in the batch was 4.39%.
【0021】[0021]
【発明の効果】以上の説明で明らかなように、本発明は
サセプタを多角錐台状に形成し、ベルジャーを少なくと
も前記サセプタ上の基板に対峙するベルジャーの側壁部
分において僅かに下方に拡がった円筒状に形成し、前記
サセプタ外周面とベルジャー内周面との隙間面積を、少
なくともサセプタ上の基板に対峙するベルジャーの側壁
部分において等しくしたものであり、これによって、成
長装置内原料ガスの流速が均一となって、バッチ内のエ
ピタキシャル層膜厚分布を5%以内に抑えることが可能
となり、また基板内のエピタキシャル層膜厚分布も小さ
くすることができる効果がある。As is apparent from the above description, the present invention
Form the susceptor into a truncated polygonal pyramid shape and reduce the bell jar
Also the side wall of the bell jar facing the substrate on the susceptor
In the shape of a cylinder that spreads slightly downward in minutes,
Reduce the clearance area between the outer peripheral surface of the susceptor and the inner peripheral surface of the bell jar.
At least the side wall of the bell jar facing the substrate on the susceptor
In this case, the flow rate of the source gas in the growth apparatus becomes uniform, and the thickness distribution of the epitaxial layer in the batch can be suppressed to within 5%. There is an effect that the thickness distribution can be reduced.
【図1】本発明の実施例の概略説明図である。FIG. 1 is a schematic explanatory view of an embodiment of the present invention.
【図2】図1実施例におけるベルジャーの縦断面図であ
る。FIG. 2 is a longitudinal sectional view of the bell jar in the embodiment of FIG.
【図3】図1実施例におけるサセプタの正面図である。FIG. 3 is a front view of the susceptor in the embodiment shown in FIG. 1;
【図4】上段ポケット中央位置におけるベルジャーとサ
セプタとの隙間面積を示す横断面図である。FIG. 4 is a cross-sectional view showing a clearance area between a bell jar and a susceptor at a center position of an upper pocket.
【図5】中段ポケット中央位置におけるベルジャーとサ
セプタとの隙間面積を示す横断面図である。FIG. 5 is a cross-sectional view showing a clearance area between a bell jar and a susceptor at a center position of a middle pocket.
【図6】下段ポケット中央位置におけるベルジャーとサ
セプタとの隙間面積を示す横断面図である。FIG. 6 is a cross-sectional view showing a clearance area between a bell jar and a susceptor at a center position of a lower pocket.
【図7】従来のシリンダー型エピタキシャル層成長装置
の概略縦断面図である。FIG. 7 is a schematic longitudinal sectional view of a conventional cylinder type epitaxial layer growth apparatus.
【図8】シリコン基板面内のエピタキシャル層膜厚分布
を求める要領の説明図である。FIG. 8 is an explanatory view of a method for obtaining an epitaxial layer thickness distribution in a silicon substrate surface.
【図9】図7の装置におけるベルジャーとサセプタとの
隙間面積と、ディッシング比との関係を示すグラフであ
る。FIG. 9 is a graph showing a relationship between a gap area between a bell jar and a susceptor and a dishing ratio in the apparatus of FIG. 7;
【符号の説明】 1 ベルジャー 11 サセプタ 12 ポケット 21 ベルジャー 21a 内周面 22 サセプタ 22a 外周面 23 ポケット 24 ヒータ 25 原料ガス 31 基板 31a オリエンテーションフラット部[Description of Signs] 1 bell jar 11 susceptor 12 pocket 21 bell jar 21a inner peripheral surface 22 susceptor 22a outer peripheral surface 23 pocket 24 heater 25 source gas 31 substrate 31a orientation flat portion
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 実開 昭61−156229(JP,U) 特公 昭44−17664(JP,B1) 実公 昭46−24882(JP,Y1) (58)調査した分野(Int.Cl.6,DB名) H01L 21/205 C30B 25/08──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A 61-156229 (JP, U) JP-B 44-17664 (JP, B1) JP-B 46-24882 (JP, Y1) (58) Field (Int.Cl. 6 , DB name) H01L 21/205 C30B 25/08
Claims (2)
をベルジャー内に設けたシリンダー型エピタキシャル層
成長装置において、前記サセプタを多角錐台状に形成
し、前記ベルジャーを少なくとも前記サセプタ上の基板
に対峙するベルジャーの側壁部分において僅かに下方に
拡がった円筒状に形成し、前記サセプタ外周面とベルジ
ャー内周面との隙間面積を、少なくともサセプタ上の基
板に対峙するベルジャーの側壁部分において等しくした
ことを特徴とするシリンダー型エピタキシャル層成長装
置。1. A cylinder type epitaxial layer growth apparatus in which a susceptor having a pocket for holding a substrate is provided in a bell jar, wherein the susceptor is formed in a truncated polygonal pyramid shape.
And moving the bell jar to at least a substrate on the susceptor.
Slightly below the side wall of the bell jar facing
A cylindrical epitaxial layer growth apparatus , wherein the apparatus is formed in an expanded cylindrical shape, and a clearance area between the outer peripheral surface of the susceptor and the inner peripheral surface of the bell jar is made equal at least at a side wall portion of the bell jar facing the substrate on the susceptor.
下方に向かって増加するのに対応させて、サセプタ外周
面とベルジャー内周面との距離を次第に小さくして構成
することを特徴とする請求項1記載のシリンダー型エピ
タキシャル層成長装置。2. The bell jar has a width of the susceptor.
The outer circumference of the susceptor corresponds to the increase
The distance between the surface and the inner peripheral surface of the bell jar is gradually reduced.
2. The apparatus for growing a cylindrical epitaxial layer according to claim 1, wherein:
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4282552A JP2785614B2 (en) | 1992-09-28 | 1992-09-28 | Cylinder type epitaxial layer growth equipment |
EP93307614A EP0590900B1 (en) | 1992-09-28 | 1993-09-24 | Cylindrical apparatus for growth of epitaxial layers |
DE69315525T DE69315525T2 (en) | 1992-09-28 | 1993-09-24 | Cylindrical device for the deposition of epitaxial layers |
US08/127,729 US5441571A (en) | 1992-09-28 | 1993-09-28 | Cylindrical apparatus for growth of epitaxial layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4282552A JP2785614B2 (en) | 1992-09-28 | 1992-09-28 | Cylinder type epitaxial layer growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06112127A JPH06112127A (en) | 1994-04-22 |
JP2785614B2 true JP2785614B2 (en) | 1998-08-13 |
Family
ID=17653963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4282552A Expired - Lifetime JP2785614B2 (en) | 1992-09-28 | 1992-09-28 | Cylinder type epitaxial layer growth equipment |
Country Status (4)
Country | Link |
---|---|
US (1) | US5441571A (en) |
EP (1) | EP0590900B1 (en) |
JP (1) | JP2785614B2 (en) |
DE (1) | DE69315525T2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264464A (en) * | 1995-03-24 | 1996-10-11 | Shin Etsu Handotai Co Ltd | Vapor-phase epitaxy |
US5968277A (en) * | 1997-10-10 | 1999-10-19 | Seh America, Inc. | Susceptor apparatus for epitaxial deposition and method for reducing slip formation on semiconductor substrates |
US6129048A (en) * | 1998-06-30 | 2000-10-10 | Memc Electronic Materials, Inc. | Susceptor for barrel reactor |
US6738683B1 (en) * | 2000-09-05 | 2004-05-18 | Cxe Equipment Services, Llc | Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US8404049B2 (en) * | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
US9441295B2 (en) * | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
US20140038421A1 (en) * | 2012-08-01 | 2014-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposition Chamber and Injector |
US20160359080A1 (en) | 2015-06-07 | 2016-12-08 | Solarcity Corporation | System, method and apparatus for chemical vapor deposition |
US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3637434A (en) * | 1968-11-07 | 1972-01-25 | Nippon Electric Co | Vapor deposition apparatus |
JPS56113981A (en) * | 1980-02-13 | 1981-09-08 | Takasago Kogyo Kk | Tunnel kiln for burning smoked tile |
FR2490246A1 (en) * | 1980-09-17 | 1982-03-19 | Cit Alcatel | CHEMICAL DEPOSITION DEVICE ACTIVATED UNDER PLASMA |
JPS60215594A (en) * | 1984-04-06 | 1985-10-28 | Fujitsu Ltd | Apparatus for vapor-phase growth |
US4612207A (en) * | 1985-01-14 | 1986-09-16 | Xerox Corporation | Apparatus and process for the fabrication of large area thin film multilayers |
JPH0719136Y2 (en) * | 1985-03-15 | 1995-05-01 | 東芝機械株式会社 | Cylinder type vapor phase growth equipment |
US4728389A (en) * | 1985-05-20 | 1988-03-01 | Applied Materials, Inc. | Particulate-free epitaxial process |
US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
US5002011A (en) * | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
JPH01125923A (en) * | 1987-11-11 | 1989-05-18 | Sumitomo Chem Co Ltd | Vapor growth apparatus |
US5053247A (en) * | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
EP0502209B1 (en) * | 1990-09-21 | 1997-05-14 | Fujitsu Limited | Method and apparatus for growing compound semiconductor crystals |
-
1992
- 1992-09-28 JP JP4282552A patent/JP2785614B2/en not_active Expired - Lifetime
-
1993
- 1993-09-24 EP EP93307614A patent/EP0590900B1/en not_active Expired - Lifetime
- 1993-09-24 DE DE69315525T patent/DE69315525T2/en not_active Expired - Fee Related
- 1993-09-28 US US08/127,729 patent/US5441571A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69315525T2 (en) | 1998-04-02 |
EP0590900B1 (en) | 1997-12-03 |
DE69315525D1 (en) | 1998-01-15 |
JPH06112127A (en) | 1994-04-22 |
EP0590900A1 (en) | 1994-04-06 |
US5441571A (en) | 1995-08-15 |
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