JP2773350B2 - Electron beam storage method, electron beam storage element and manufacturing method thereof - Google Patents
Electron beam storage method, electron beam storage element and manufacturing method thereofInfo
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- JP2773350B2 JP2773350B2 JP2024119A JP2411990A JP2773350B2 JP 2773350 B2 JP2773350 B2 JP 2773350B2 JP 2024119 A JP2024119 A JP 2024119A JP 2411990 A JP2411990 A JP 2411990A JP 2773350 B2 JP2773350 B2 JP 2773350B2
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- electron gun
- electrode
- substrate
- electron beam
- resist
- Prior art date
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Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、情報を電子線により媒体に記録・書換・再
生を行う電子線記憶素子およびその製造方法に関する。Description: TECHNICAL FIELD The present invention relates to an electron beam storage element that records, rewrites, and reproduces information on a medium using an electron beam, and a method of manufacturing the same.
（従来の技術） 過去に、第５図で示すようなウイリアムス管51とよば
れる陰極管を用いた記憶装置が使用されたことがあっ
た。これは陰極管（ブラウン管）52を用いて電子銃53か
ら発生させた電子線54を偏向コイル55により蛍光膜56に
当て、焦点を絞った時と焦点をぼかした時の蛍光膜の電
荷を変化させて情報を記録し、陰極管の外側に設けたピ
ックアップ電極57に発生する電圧波形の違いで情報を再
生するものである。(Prior Art) In the past, a storage device using a cathode ray tube called a Williams tube 51 as shown in FIG. 5 has been used in some cases. In this method, an electron beam 54 generated from an electron gun 53 using a cathode ray tube (CRT) 52 is applied to a fluorescent film 56 by a deflection coil 55 to change the electric charge of the fluorescent film when the focus is narrowed and when the focus is defocused. In this way, information is recorded, and the information is reproduced by a difference in voltage waveform generated on the pickup electrode 57 provided outside the cathode tube.
（発明が解決しようとする課題） しかしウイリアムス管は蛍光膜上の電荷が短時間に散
逸してしまうので、電子線を常に走査していないと記憶
を保持できない。即ち揮発性の記憶装置である。また陰
極管が大型のため装置の小型化に限界があった。(Problems to be Solved by the Invention) However, in the Williams tube, the charge on the fluorescent film is dissipated in a short time, so that the memory cannot be held unless the electron beam is constantly scanned. That is, it is a volatile storage device. In addition, the size of the apparatus was limited due to the large size of the cathode tube.
本発明の目的は、ウイリアムス管の欠点の解決を図っ
た電子線記憶素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam storage element which solves the drawback of the Williams tube.
（課題を解決するための手段） 本発明は、基板と、この基板上に形成されこの基板と
垂直方向に電子線を発射する電子銃と、この電子銃と外
部電源とを接続する電極と、前記電子銃の周囲に絶縁層
を介して積層された電界レンズおよび偏向電極と、前記
電子銃と対向して形成された記憶媒体と、この記憶媒体
の前記電子銃とは反対側の面に設けられ電子銃に対して
正の電位をかける電極とからなることを特徴とする電子
線記憶素子である。(Means for Solving the Problems) The present invention provides a substrate, an electron gun formed on the substrate and emitting an electron beam in a direction perpendicular to the substrate, an electrode for connecting the electron gun to an external power supply, An electric field lens and a deflection electrode laminated around the electron gun via an insulating layer; a storage medium formed to face the electron gun; and a storage medium provided on a surface of the storage medium opposite to the electron gun. And an electrode for applying a positive potential to the electron gun.
電界レンズは、絶縁層を介して積層された３層のリン
グ状電極によって構成することができる。また偏向電極
は、リング状電極を２分割して半円形状の電極としても
良いし、４分割としても良い。２分割とした場合は、電
子ビームを一次元方向に偏向することが可能であり、４
分割とした場合は二次元方向に偏向することができる。The electric field lens can be constituted by three layers of ring-shaped electrodes stacked via an insulating layer. Further, the deflection electrode may be a semicircular electrode by dividing the ring-shaped electrode into two, or may be divided into four. When divided into two, the electron beam can be deflected in a one-dimensional direction.
When divided, the light can be deflected in the two-dimensional direction.
記憶媒体としては、電子線の照射により電子線の透過
率が変化する媒体を用いる。このような媒体としては、
インジウム、シリコン、ゲルマニウム、セレン、ガリウ
ム、テルル、錫、鉛、タリウム、亜鉛、カドミウム、ビ
スマス、ひそ、アンチモン、硫黄、ポロニウム、燐、ニ
ッケル・燐などがある。As the storage medium, a medium whose electron beam transmittance changes by irradiation with an electron beam is used. Such media include:
Examples include indium, silicon, germanium, selenium, gallium, tellurium, tin, lead, thallium, zinc, cadmium, bismuth, bellows, antimony, sulfur, polonium, phosphorus, nickel and phosphorus.
また、本発明の電子線記憶素子を同一基板上に複数形
成することによって、記憶容量を増大させることができ
る。Further, by forming a plurality of electron beam storage elements of the present invention on the same substrate, the storage capacity can be increased.
なお、本発明の電子線記憶素子は、ガラス管等に封入
され、真空中で使用される。The electron beam storage element of the present invention is sealed in a glass tube or the like and used in a vacuum.
次に、本発明の電子線記憶素子の製造方法は、基板上
に電子銃および電極を形成する金属を成長する工程と、
該金属を電極形状にパターニングする工程と、パターニ
ングされた金属の電子銃を形成する位置にレジストパタ
ーンを形成し、該金属をエッチングし、電子銃を形成す
る工程と、該電子銃の上にレジストを塗布し、電子銃以
外の領域のレジストを除去する工程と、その上に絶縁層
を介して電界レンズおよび偏向電極を積層し、前記電子
銃の上のレジストを除去する工程と、前記基板と対向配
置させる基板上に電極と記憶媒体とを積層する工程と、
前記２枚の基板を対向して接着する工程とからなること
を特徴とする。Next, the method for manufacturing an electron beam storage element of the present invention includes the steps of: growing a metal forming an electron gun and an electrode on a substrate;
Patterning the metal into an electrode shape, forming a resist pattern at a position where an electron gun of the patterned metal is to be formed, etching the metal to form an electron gun, and forming a resist on the electron gun. Coating, removing the resist in a region other than the electron gun, and stacking an electric field lens and a deflection electrode thereon via an insulating layer, removing the resist on the electron gun, Laminating an electrode and a storage medium on a substrate to be opposed,
And bonding the two substrates so as to face each other.
また、その他の製造方法は、基板上に電極を形成する
工程と、原料ガス雰囲気中または、原料金属塩溶液中で
前記電極上の電子銃形成箇所に光を照射し、選択的に金
属を成長させて電子銃を形成する工程と、該電子銃の上
にレジストを塗布し、電子銃以外の領域のレジストを除
去する工程と、その上に絶縁層を介して電界レンズおよ
び偏向電極を積層し、前記電子銃上のレジストを除去す
る工程と、前記基板と対向配置させる基板上に電極と記
憶媒体とを積層する工程と、前記２枚の基板を対向に接
着する工程とからなることを特徴とする。In another manufacturing method, a step of forming an electrode on a substrate and irradiating light to an electron gun forming portion on the electrode in a raw material gas atmosphere or a raw metal salt solution to selectively grow metal. Forming an electron gun, applying a resist on the electron gun, removing the resist in a region other than the electron gun, and laminating an electric field lens and a deflection electrode via an insulating layer thereon. Removing the resist on the electron gun, laminating an electrode and a storage medium on a substrate arranged to face the substrate, and bonding the two substrates to face each other. And
さらに上記製造方法の電子銃形成工程は、以下のよう
に変えることもできる。電極を形成した基板を原料金属
塩溶液中で金属針を近付け、電界を掛けることにより、
この電極上に選択的に金属を析出・成長させて電子銃を
形成する。これ以降の工程は上記と同様に行う。Further, the electron gun forming step of the above manufacturing method can be changed as follows. The substrate on which the electrodes are formed is brought close to the metal needle in the raw metal salt solution, and an electric field is applied.
A metal is selectively deposited and grown on the electrode to form an electron gun. Subsequent steps are performed in the same manner as described above.
（作用） 本発明の素子では、先端をとがらせた電子銃と記憶媒
体裏面の電極との間に電圧を印加することによって電子
線を放出している。放出された電子線は電界レンズまた
は磁界レンズによって記憶媒体上に収束する。収束する
位置は偏向電極によって制御可能である。(Function) In the device of the present invention, an electron beam is emitted by applying a voltage between the electron gun having a sharp tip and the electrode on the back surface of the storage medium. The emitted electron beam is converged on the storage medium by an electric or magnetic lens. The converging position can be controlled by the deflection electrode.
以上のような電子線記憶素子は、本発明の製造方法に
より容易に作成できる。Such an electron beam storage element can be easily prepared by the manufacturing method of the present invention.
（実施例） 第１図は本発明の電子線記憶素子25の一実施例を示す
図である。基板１の上に電子銃３が形成されており、電
極２を介して電極16との間に電源19から電圧がかけられ
ると電子線12が放射される。電子線12は３つの電極Ａ、
Ｂ、Ｃ（それぞれ９、７、５）からなる電界レンズ10に
よって絞られ、また偏向電極13によって記憶媒体15の所
定の位置に照射され、記録領域Ａ、Ｂ（それぞれ18、1
7）に情報が記録される。(Embodiment) FIG. 1 is a view showing an embodiment of the electron beam storage element 25 of the present invention. An electron gun 3 is formed on a substrate 1. When a voltage is applied from a power supply 19 to the electrode 16 via the electrode 2, an electron beam 12 is emitted. The electron beam 12 has three electrodes A,
B and C (9, 7 and 5 respectively) are squeezed by an electric field lens 10 and irradiate a predetermined position of a storage medium 15 by a deflecting electrode 13 to record areas A and B (18 and 1 respectively).
Information is recorded in 7).
電界レンズ10は、電極Ａ、Ｃが接地され、電極Ｂが電
源20と接続され、正電位にバイアスされている。この電
場の作用により電子は力を受けて収束される。なお、電
界レンズ10は、他の形状でも良いし、磁界レンズに変え
ることもできる。Electrode lens 10 has electrodes A and C grounded, electrode B connected to power supply 20, and biased to a positive potential. Electrons are converged by receiving a force by the action of the electric field. The electric field lens 10 may have another shape or may be changed to a magnetic field lens.
偏向電極13をXY面で切った場合の形状を第１図（ｂ）
（ｃ）に示す。図（ｂ）のようにリング状電極を２分割
した形状では一次元方向に偏向可能であり、図（ｃ）で
は２次元状に偏向可能である。偏向量は電源21の電圧値
によって任意にできる。Fig. 1 (b) shows the shape when the deflection electrode 13 is cut along the XY plane.
It is shown in (c). In the case where the ring-shaped electrode is divided into two parts as shown in FIG. 2B, it is possible to deflect in a one-dimensional direction, and in FIG. 7C it is possible to deflect in a two-dimensional manner. The amount of deflection can be arbitrarily determined by the voltage value of the power supply 21.
電子銃３、電界レンズ10、偏向電極13の電圧は、制御
回路22により外部バス24からのデータに基づいて制御さ
れる。情報の記録は電子線12の強度を強くかつ短時間に
照射して、記録媒体の融点以上に加熱し急冷することに
より記憶媒体15を非晶質にすると電子線の透過率が高ま
ることによりなされる。一方、情報の消去は電子線12の
強度を弱くかつ長時間照射して、結晶化温度以上かつ融
点以下で加熱すると結晶質に相変態し電子線の透過率が
低くなることによりなされる。情報の再生は電子線12の
強度を弱く結晶化温度を超えないように照射して、記憶
媒体15が結晶質か非晶質かを電子線の透過率の差から電
流形23により検出し情報の識別を行う。電流値の差は制
御回路22を介して２値化された情報として外部バス24か
ら出力される。Voltages of the electron gun 3, the electric field lens 10, and the deflection electrode 13 are controlled by the control circuit 22 based on data from the external bus 24. Information is recorded by irradiating the electron beam 12 with a high intensity and in a short time, heating the recording medium to a temperature higher than the melting point thereof, and rapidly cooling the recording medium 15 to make the storage medium 15 amorphous, thereby increasing the electron beam transmittance. You. On the other hand, information is erased by irradiating the electron beam 12 with a weak intensity for a long time and heating it at a temperature higher than the crystallization temperature and lower than the melting point, so that the phase changes to crystalline and the transmittance of the electron beam decreases. Information is reproduced by irradiating the electron beam 12 so that the intensity of the electron beam 12 is weak and does not exceed the crystallization temperature, and whether the storage medium 15 is crystalline or amorphous is detected by the current source 23 from the difference in transmittance of the electron beam. Identification of The difference between the current values is output from the external bus 24 via the control circuit 22 as binarized information.
第２図は本発明の電子線記憶素子１の別の実施例をを
示す図ある。基板１から絶縁層14までは第１図の電子線
記憶素子と同じ構造であるが、同一基板上に存在する個
々の電子線記憶素子間の隔壁が記憶媒体近傍で存在せ
ず、１つの電子線記憶素子の電子銃からの電子線と隣の
電子線記憶素子からの電子線との間隔が隔壁の厚みの分
だけ小さくでき、記憶密度をより大きくできる。FIG. 2 is a view showing another embodiment of the electron beam storage element 1 of the present invention. Although the structure from the substrate 1 to the insulating layer 14 is the same as that of the electron beam storage element of FIG. 1, the partition between the individual electron beam storage elements existing on the same substrate does not exist near the storage medium, and one electron beam storage element does not exist. The distance between the electron beam from the electron gun of the line storage element and the electron beam from the adjacent electron beam storage element can be reduced by the thickness of the partition wall, and the storage density can be further increased.
本発明の電子線記憶素子の製造には、第３図（ａ）か
ら（ｍ）に示すプロセスを用いる。The processes shown in FIGS. 3A to 3M are used for manufacturing the electron beam storage element of the present invention.
絶縁体基板としてガラス基板25上に金属薄膜26として
タングステンを設け（ｂ）、レジスト27を被覆したのち
露光、エッチングを行う（ｃ）。その上に絶縁体として
SiO228を被覆したのち残存するレジストを除去して電極
26を形成する（ｄ）。以下の工程は電子銃の作成である
が、４種類の作成法を説明する。Tungsten is provided as a metal thin film 26 on a glass substrate 25 as an insulator substrate (b), and after exposure with a resist 27, exposure and etching are performed (c). As an insulator on it
After coating with SiO 2 28, the remaining resist is removed and the electrode
26 is formed (d). The following steps are for preparing an electron gun. Four types of preparing methods will be described.
第一の方法は（ｄ）タングステン電極26の上に再びレ
ジスト29を塗布し（ｅ）、電極部の上のレジスト部に露
光した後エッチングして円錐状のレジスト部29′を形成
する（ｆ）。全体をイオンエッチングにより該レジスト
部が無くなるまでエッチングし、電極の上に金属からな
る円錐状の電子銃となるＷ針30を形成する（ｇ）。Ｗ針
の先端の曲率半径は0.1μｍ程度であれば良い。また、
電子銃はＷ以外の金属や、TiC、TaC、SiCなどの炭化物
や、TiNのような窒化物でもよい。In the first method, (d) a resist 29 is applied again on the tungsten electrode 26 (e), and the resist on the electrode is exposed and then etched to form a conical resist 29 '(f). ). The whole is etched by ion etching until the resist portion disappears, and a W needle 30 serving as a conical electron gun made of metal is formed on the electrode (g). The radius of curvature of the tip of the W needle may be about 0.1 μm. Also,
The electron gun may be made of a metal other than W, a carbide such as TiC, TaC, or SiC, or a nitride such as TiN.
第二の方法は、（ｎ）に示すように、タングステン電
極26の上にＷ（CO）660のガス気流中で紫外線レーザー6
1を照射して光化学反応を利用して金属タングステンを
針状に成長させて電子銃30を形成する。The second method, as shown in (n), ultraviolet laser 6 above the tungsten electrode 26 at W (CO) 6 60 Gas stream
The electron gun 30 is formed by irradiating 1 and using a photochemical reaction to grow metal tungsten into a needle shape.
第三の方法は、（ｎ）と同様にタングステン電極26の
上に塩化タングステン水溶液中でYAGレーザーを照射
し、金属タングステンを針状に成長させて電子銃を形成
した。In the third method, an electron gun is formed by irradiating a YAG laser in an aqueous solution of tungsten chloride on the tungsten electrode 26 in the same manner as in (n) to grow tungsten metal into a needle shape.
第四の方法では、（Ｏ）に示すように塩化タングステ
ン水溶液62中で白金針63をタングステン電極26の上に近
付け、電界を掛けることにより金属タングステンを針状
に析出させ、電子銃30を形成した。以上の方法ではSiO2
28を形成してから電子銃を形成しているが、SiO228はこ
の後の絶縁体32と同時に形成してもかまわない。In the fourth method, as shown in (O), a platinum needle 63 is brought close to the tungsten electrode 26 in a tungsten chloride aqueous solution 62, and an electric field is applied to deposit metal tungsten in a needle shape to form the electron gun 30. did. In the above method, SiO 2
Although the electron gun is formed after the formation of the insulator 28, the SiO 2 28 may be formed simultaneously with the subsequent insulator 32.
上記４つのいづれかの方法で電子銃を形成した後、そ
の上にレジスト31を塗布し（ｈ）、電子銃の上の部分、
直径10μｍの領域に露光し、その他の部分を溶媒で除去
する（ｉ）。絶縁体32を成膜した後、金属33、35、37と
絶縁体34、36、38の順に３回成膜を繰り返して電界レン
ズを形成する。その上に金属としてCu39を被覆し偏向電
極を形成する（ｊ）。その上に絶縁層40を形成したのち
溶媒によりレジストを除去し、電子銃の上に孔を形成す
る（ｋ）。成膜方法としては、スパッタ法が望ましい
が、蒸着法や、CVD法等でもよい。別に作製した、ガラ
スからなる基板61の上にスパッタリングにより被覆した
アルミニウム電極膜42上のインジウム・セレン合金薄膜
からなる記憶媒体41を該孔を覆うように接着し（１）、
全体45を絶縁体として封入ガラス44で真空状態中に封入
する（ｍ）ことにより作製した。このように作製した素
子を第４図に示すように硝子基板46上に多数集積化する
ことで記憶容量の大きい電子線記憶素子が得られる。直
径10μｍの素子を作製し、素子の間隔を10μｍ取った場
合、1cm×1cmの基板上に250,000個の素子が存在する。After forming an electron gun by any one of the above four methods, a resist 31 is applied thereon (h), and a portion above the electron gun,
The region having a diameter of 10 μm is exposed, and the other portion is removed with a solvent (i). After the insulator 32 is formed, the metal films 33, 35 and 37 and the insulators 34, 36 and 38 are sequentially formed three times to form an electric field lens. Cu39 is coated thereon as a metal to form a deflection electrode (j). After forming the insulating layer 40 thereon, the resist is removed with a solvent to form a hole on the electron gun (k). As a film forming method, a sputtering method is desirable, but a vapor deposition method, a CVD method, or the like may be used. A separately prepared storage medium 41 made of an indium-selenium alloy thin film on an aluminum electrode film 42 coated by sputtering on a substrate 61 made of glass is adhered so as to cover the holes (1).
It was manufactured by sealing the whole 45 as an insulator with a sealing glass 44 in a vacuum state (m). By integrating a large number of the devices thus manufactured on a glass substrate 46 as shown in FIG. 4, an electron beam storage device having a large storage capacity can be obtained. When an element having a diameter of 10 μm is manufactured and the distance between the elements is 10 μm, 250,000 elements exist on a 1 cm × 1 cm substrate.
（発明の効果） 次に、実施例で得られた電子線記憶素子について動作
試験を行ったところ、アクセス時間200μｓ、記録密度
平方mm当たり105ビットにおいて情報の記録・書換・再
生が確認された。また素子全体の大きさは2cm×2cm×0.
5cmであり、ウイリアムス管の10cm×10cm×20cmに比べ
極めて小さい。さらに、ウイリアムス管と異なり、絶え
ず走査する必要はないという効果がある。(Effect of Invention) Next, was subjected to a performance test for the electron beam storage device obtained in Example, the access time 200 [mu] s, recording and rewriting and reproducing information in a recording density square mm per 10 5 bits was confirmed . The size of the whole device is 2cm x 2cm x 0.
It is 5 cm, which is extremely smaller than the Williams tube's 10 cm x 10 cm x 20 cm. Further, unlike the Williams tube, there is an effect that it is not necessary to constantly scan.
第１図（ａ）〜（ｃ）は本発明の電子線記憶素子の一実
施例を示す図、第２図は本発明の電子線記憶素子の別の
実施例を示す図、第３図（ａ）から（ｏ）は本発明の電
子線記憶素子の製造方法を示す図、第４図は本発明の電
子線記憶素子の素子部が基板上にいくつか形成されてい
る様子を示す図である。 第５図は従来の陰極管と蛍光膜を用いた記憶装置である
ウイリアムス管を示す図である。 図に於て51はウイリアムス管、52は陰極管、52は電子
銃、54は電子線、55は偏向コイル、56は蛍光膜、57はピ
ックアップ電極、58は増幅・論理回路、１は基板、２は
電極、３は電子銃、４は絶縁層、５は電極Ｃ、６は絶縁
層、７は電極Ｂ、８は絶縁層、９は電極Ａ、10は電界レ
ンズ、11は絶縁層、12は電子線、13は偏向電極、14は絶
縁層、15f記憶媒体、16は電極、17は記憶領域Ｂ、18は
記憶領域Ａ、19は電源、20は電源、21は電源、22は制御
回路、23は電圧形、24は外部バス、25は硝子基板、26は
タングステン薄膜、27はレジスト膜、28はSiO2膜、29は
レジスト膜、30はＷ針、31はレジスト膜、32はSiO2膜、
33はAl膜、34はSiO2膜、35はAl膜、36はSiO2膜、37はAl
膜、38はSiO2膜、39はCu膜、40はSiO2、41はInSe膜、42
はAl膜、43は電極、44は封入硝子管、45は電子線記憶素
子、46は基板、47は素子、48は電極、60はＷ（CO）６、
61はレーザー光、62は塩化タングステン水溶液、63は白
金針である。1 (a) to 1 (c) are views showing an embodiment of the electron beam storage element of the present invention, FIG. 2 is a view showing another embodiment of the electron beam storage element of the present invention, and FIG. a) to (o) are views showing a method for manufacturing an electron beam storage element of the present invention, and FIG. 4 is a view showing a state where some element portions of the electron beam storage element of the present invention are formed on a substrate. is there. FIG. 5 is a diagram showing a conventional Williams tube which is a storage device using a cathode tube and a fluorescent film. In the figure, 51 is a Williams tube, 52 is a cathode tube, 52 is an electron gun, 54 is an electron beam, 55 is a deflection coil, 56 is a fluorescent film, 57 is a pickup electrode, 58 is an amplification / logic circuit, 1 is a substrate, 2 is an electrode, 3 is an electron gun, 4 is an insulating layer, 5 is an electrode C, 6 is an insulating layer, 7 is an electrode B, 8 is an insulating layer, 9 is an electrode A, 10 is an electric lens, 11 is an insulating layer, 12 Is an electron beam, 13 is a deflection electrode, 14 is an insulating layer, 15f storage medium, 16 is an electrode, 17 is a storage area B, 18 is a storage area A, 19 is a power supply, 20 is a power supply, 21 is a power supply, and 22 is a control circuit. , 23 is a voltage source, 24 is an external bus, 25 is a glass substrate, 26 is a tungsten thin film, 27 is a resist film, 28 is a SiO 2 film, 29 is a resist film, 30 is a W needle, 31 is a resist film, 32 is SiO 2 membranes,
33 is an Al film, 34 is an SiO 2 film, 35 is an Al film, 36 is an SiO 2 film, 37 is Al
Film, 38 is a SiO 2 film, 39 is a Cu film, 40 is SiO 2 , 41 is an InSe film, 42
Is an Al film, 43 is an electrode, 44 is a sealed glass tube, 45 is an electron beam storage element, 46 is a substrate, 47 is an element, 48 is an electrode, 60 is W (CO) 6 ,
61 is a laser beam, 62 is a tungsten chloride aqueous solution, and 63 is a platinum needle.
Claims (4)
垂直方向に電子線を発射する電子銃と、この電子銃と外
部電源とを接続する電極と、前記電子銃の周囲に絶縁層
を介して積層された電界レンズおよび偏向電極と、前記
電子銃と対向して形成された記憶媒体と、この記憶媒体
の前記電子銃とは反対側の面に設けられ、電子銃に対し
て正の電位をかける電極とからなることを特徴とする電
子線記憶素子。1. A substrate, an electron gun formed on the substrate and emitting an electron beam in a direction perpendicular to the substrate, an electrode for connecting the electron gun to an external power supply, and an insulating layer around the electron gun. An electric field lens and a deflection electrode laminated through the intermediary, a storage medium formed to face the electron gun, and a storage medium provided on a surface of the storage medium opposite to the electron gun, and having a positive side with respect to the electron gun. An electron beam storage element comprising: an electrode for applying a potential of
を成長する工程と、該金属を電極形状にパターニングす
る工程と、パターニングされた金属の電子銃を形成する
位置にレジストパターンを形成し、該金属をエッチング
し、電子銃を形成する工程と、該電子銃の上にレジスト
を塗布し、電子銃以外の領域のレジストを除去する工程
と、その上に絶縁層を介して電界レンズおよび偏向電極
を積層し、前記電子銃の上のレジストを除去する工程
と、前記基板と対向配置させる基板上に電極と記憶媒体
とを積層する工程と、前記２枚の基板を対向して接着す
る工程とからなることを特徴とする電子線記憶素子の製
造方法。2. A step of growing a metal for forming an electron gun and an electrode on a substrate, a step of patterning the metal into an electrode shape, and forming a resist pattern at a position where the patterned metal electron gun is to be formed. Etching the metal to form an electron gun, applying a resist on the electron gun, removing the resist in a region other than the electron gun, and an electric field lens and an insulating layer thereover via an insulating layer. Laminating a deflection electrode and removing a resist on the electron gun; laminating an electrode and a storage medium on a substrate arranged to face the substrate; and bonding the two substrates to face each other And a method for manufacturing an electron beam storage element.
雰囲気中または、原料金属塩溶液中で前記電極上の電子
銃形成箇所に光を照射し、選択的に金属を成長させて電
子銃を形成する工程と、該電子銃の上にレジストを塗布
し、電子銃以外の領域のレジストを除去する工程と、そ
の上に絶縁層を介して電界レンズおよび偏向電極を積層
し、前記電子銃上のレジストを除去する工程と、前記基
板と対向配置させる基板上に電極と記憶媒体とを積層す
る工程と、前記２枚の基板を対向に接着する工程とから
なることを特徴とする電子線記憶素子の製造方法。3. A step of forming an electrode on a substrate, and irradiating light to an electron gun forming portion on the electrode in a raw material gas atmosphere or a raw metal salt solution to selectively grow a metal, Forming a gun, applying a resist on the electron gun, removing the resist in a region other than the electron gun, stacking an electric field lens and a deflection electrode via an insulating layer thereon, An electronic device comprising: a step of removing a resist on a gun; a step of laminating an electrode and a storage medium on a substrate arranged to face the substrate; and a step of bonding the two substrates to face each other. A method for manufacturing a line storage element.
において、前記電子銃を形成する工程に代えて、原料金
属塩溶液中で金属針を基板に近付け、電界を掛けること
により選択的に金属を析出・成長させて電子銃を形成す
る工程を含むことを特徴とする電子線記憶素子の製造方
法。4. A method of manufacturing an electron beam storage element according to claim 2, wherein a metal needle is brought closer to the substrate in a raw metal salt solution and an electric field is applied thereto, instead of forming the electron gun. A method of forming an electron gun by depositing and growing a metal on an electron beam storage element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024119A JP2773350B2 (en) | 1990-02-01 | 1990-02-01 | Electron beam storage method, electron beam storage element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024119A JP2773350B2 (en) | 1990-02-01 | 1990-02-01 | Electron beam storage method, electron beam storage element and manufacturing method thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30384797A Division JPH10247383A (en) | 1997-11-06 | 1997-11-06 | Storing method by electron beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03228294A JPH03228294A (en) | 1991-10-09 |
| JP2773350B2 true JP2773350B2 (en) | 1998-07-09 |
Family
ID=12129430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024119A Expired - Fee Related JP2773350B2 (en) | 1990-02-01 | 1990-02-01 | Electron beam storage method, electron beam storage element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2773350B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW437095B (en) * | 1998-10-16 | 2001-05-28 | Seiko Epson Corp | Substrate for photoelectric device, active matrix substrate and the inspection method of substrate for photoelectric device |
| KR100429843B1 (en) | 2001-09-22 | 2004-05-03 | 삼성전자주식회사 | High density data storage method utilizing electron emission, phase change media and storage system adopting the same and data storage media for the system |
| WO2004114314A1 (en) * | 2003-06-11 | 2004-12-29 | Matsushita Electric Industrial Co., Ltd. | Information storage |
| WO2005067585A2 (en) | 2003-07-03 | 2005-07-28 | William Oakley | Adaptive read and read-after-write for carbon nanotube recorders |
| US20050116181A1 (en) * | 2003-10-29 | 2005-06-02 | Jerry Bohn | Non-mechanical recording and retrieval apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63266632A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Method for recording information |
-
1990
- 1990-02-01 JP JP2024119A patent/JP2773350B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63266632A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Method for recording information |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03228294A (en) | 1991-10-09 |
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