JP2760121B2 - Method for manufacturing thin-film EL panel - Google Patents
Method for manufacturing thin-film EL panelInfo
- Publication number
- JP2760121B2 JP2760121B2 JP2025354A JP2535490A JP2760121B2 JP 2760121 B2 JP2760121 B2 JP 2760121B2 JP 2025354 A JP2025354 A JP 2025354A JP 2535490 A JP2535490 A JP 2535490A JP 2760121 B2 JP2760121 B2 JP 2760121B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- panel
- forming
- external lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title description 12
- 239000010408 film Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241001175904 Labeo bata Species 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、キャラクタやグラフィックスなどの表示に
用いる薄膜ELパネルの製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin-film EL panel used for displaying characters, graphics, and the like.
従来の技術 従来よりEL発光体層を用いた固体表示パネルとして、
Ｘ−Ｙマトリックス表示パネルが知られている。このパ
ネルはEL発光体層の両面に水平電極群と垂直電極群とを
互いに直交するように配置し、それぞれの電極群に接続
した給電線により切り換え装置から信号を加えて量電極
の交点部分のEL発光体層を発光させ（この交点の発光部
分を絵素と称する）、発光した絵素の組合せによって文
字や図形などを表示させるものである。Conventional technology Conventionally, as a solid display panel using an EL luminous body layer,
XY matrix display panels are known. In this panel, a horizontal electrode group and a vertical electrode group are arranged on both surfaces of the EL light emitting layer so as to be orthogonal to each other, and a signal is applied from a switching device by a feeder line connected to each of the electrode groups, and a signal is applied from an intersection of the quantity electrodes. The EL light-emitting layer emits light (the light-emitting portion at the intersection is referred to as a picture element), and characters, figures, and the like are displayed by a combination of the emitted picture elements.
ここで用いられる固体表示パネルとしては、通常ガラ
スなどの透光性基板（以下ガラス基板と称する）の上に
互いに平行な透明電極を形成し、その上に第一誘電体
層,EL発光体層，第二誘電体層を順次積層し、さらにそ
の上に背面電極を下層の透明電極に直交する配置で積層
して形成する。一般に透明電極は平滑なガラス基板の上
に被着された酸化錫や錫添加酸化インジウム（以下ITO
と称する）であり、対向する背面電極はアルミニウムな
どの金属膜を真空蒸着により形成したものである。The solid-state display panel used here is generally formed by forming transparent electrodes parallel to each other on a light-transmitting substrate such as glass (hereinafter referred to as a glass substrate), and further forming a first dielectric layer and an EL light-emitting layer thereon. , A second dielectric layer, and a back electrode is further laminated thereon so as to be orthogonal to the lower transparent electrode. Generally, a transparent electrode is made of tin oxide or tin-added indium oxide (hereinafter ITO) deposited on a smooth glass substrate.
The opposite back electrode is formed by forming a metal film such as aluminum by vacuum evaporation.
外部導出電極は、背面電極用の膜を形成後に外部導出
電極用の膜を形成し、フォトリソ法を用いてレジストパ
ターンを形成した後、順次エッチングを行う方法がとら
れていた。たとえばアルミニウム膜を成膜後にニッケル
膜を背面電極および透明電極の外部導出部分に成膜し、
レジストパターンを形成した後ニッケル膜をエッチング
し、続いてアルミニウム膜をエッチングする方法がとら
れている。As the external lead electrode, a method of forming a film for the external lead electrode after forming a film for the back electrode, forming a resist pattern by using a photolithographic method, and then performing etching sequentially has been adopted. For example, after forming an aluminum film, a nickel film is formed on the back electrode and the outside lead-out portion of the transparent electrode,
After a resist pattern is formed, a method of etching a nickel film and subsequently etching an aluminum film is used.
発明が解決しようとする課題 しかしながら上記の従来の方法では、外部導出電極を
形成するための工程数が多く、また時間もかかる要因と
なる。特に外部導出電極の形成は複雑である。またEL発
光体層を形成後熱処理活性化を行うが、高温度で真空中
で行うので時間もかかる。また真空中での熱処理が入る
ということは工程がいったんそこで中断するので連続成
膜を行うことがむずかしくなり、成膜装置のライン化が
できなくなる等の問題点を有していた。Problems to be Solved by the Invention However, in the above-described conventional method, the number of steps for forming the external lead-out electrode is large, and it takes time. In particular, the formation of the external lead-out electrode is complicated. After the EL light emitting layer is formed, the heat treatment is activated. However, since the heat treatment is performed in a vacuum at a high temperature, it takes time. In addition, when a heat treatment in a vacuum is performed, the process is interrupted once, so that it is difficult to continuously form a film, and there is a problem that a line of a film forming apparatus cannot be formed.
本発明は上記従来の問題点を解決するもので、製造工
程の連続化と工程削減を可能とする薄膜ELパネルの製造
方法を提供することを目的とする。An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a method of manufacturing a thin-film EL panel that enables continuation and reduction of manufacturing steps.
課題を解決するための手段 この目的を達成するために本発明の薄膜ELの製造方法
は、外部導出電極の形成を導電性ペーストの印刷により
行い、かつ導電性ペーストの硬化とEL発光体層の熱処理
活性化を同時に行う構成としたものである。Means for Solving the Problems In order to achieve this object, the method for producing a thin film EL of the present invention comprises forming an external lead-out electrode by printing a conductive paste, and curing the conductive paste and forming an EL luminescent layer. In this configuration, the heat treatment is activated simultaneously.
作用 この構成によって、外部導出電極の形成法を従来のニ
ッケル蒸着、フォトリソ法によるレジストパターン形成
およびニッケル膜エッチングからなる複雑な工程を大幅
に削減できる。Operation With this configuration, the method of forming the external lead-out electrode can be significantly reduced from the complicated steps of conventional nickel vapor deposition, resist pattern formation by photolithography, and nickel film etching.
実施例 以下本発明の一実施例について、図面を参照しながら
説明する。An embodiment of the present invention will be described below with reference to the drawings.
第１図（ａ）〜（ｆ）は本発明の一実施例による薄膜
ELパネルの製造方法を示す工程別の平面図、第２図
（ａ）〜（ｆ）は第１図と同一工程を示す工程別の断面
図である。1 (a) to 1 (f) show a thin film according to an embodiment of the present invention.
2 (a) to 2 (f) are cross-sectional views illustrating the same steps as those in FIG.
以下第１図に沿って説明するが、第１図の（ａ）は第
２図の（ａ）と同一工程であり、以下（ｂ）〜（ｆ）も
同様である。まず（ａ）に示すように、ガラス基板１上
にスパッタリング法により基板温度450℃で厚さ600nmの
ITO膜を形成した後、所定のマスクを用いてフォトリソ
法とエッチングによりITO膜をストライプ状に加工し透
明電極２とする。次に（ｂ）のように第一誘電体層３と
して、アルミナ膜（Al2O3）を基板温度200℃でスパッタ
リング法により厚さ300nmに形成する。次に（ｃ）のよ
うに蒸着法により、基板温度200℃で厚さ500nmのマンガ
ン添加硫化亜鉛膜からなるEL発光体層４を形成する。次
に（ｄ）のように第二誘電体層５としてタンタル酸バリ
ウム（BaTa2O6）薄膜を基板温度150℃でスパッタリング
法により厚さ200nmに形成する。次に（ｅ）のように、
導電性ペースト、例えば少量のインジウムを含んだ銀ペ
ーストを所定の領域に印刷し外部導出電極６を形成す
る。次に印刷した外部導出電極６の硬化とEL発光体層４
の熱処理活性化を微量の酸素を含む窒素雰囲気中で550
℃１時間行う。次に（ｆ）のように背面電極７としてア
ルミニウム膜を所定の領域に厚さ250nm蒸着し、フォト
リソ法によりレジストパターン形成後弱アルカリ溶液で
アルミニウム膜をエッチングする。以上述べた実施例で
は導電性ペーストとして銀ペーストを用いているが、低
温焼成タイプの導電性ペーストであれば他のペーストで
もよい。ここで導電性ペーストの硬化を空気中で行わな
かったのは、EL発光体層４に対して酸素が悪い影響を与
えるためである。しかし、まったく無酸素状態で硬化を
行うと導電性ペーストおよび第二誘電体層５への影響が
ある。検討した結果、酸素の比率が２〜5vol.％であれ
ば、導電性ペーストに悪影響を与えることなく、従来の
薄膜ELパネルと変わらない性能のパネルを得ることがで
きた。Hereinafter, description will be made with reference to FIG. 1. FIG. 1 (a) is the same step as FIG. 2 (a), and the same applies to (b) to (f) below. First, as shown in (a), a glass substrate 1 having a thickness of 600 nm at a substrate temperature of 450.degree.
After the ITO film is formed, the ITO film is processed into a stripe shape by a photolithography method and etching using a predetermined mask to form a transparent electrode 2. Next, as shown in (b), an alumina film (Al 2 O 3 ) is formed as the first dielectric layer 3 at a substrate temperature of 200 ° C. to a thickness of 300 nm by a sputtering method. Next, as shown in (c), an EL luminescent layer 4 made of a manganese-added zinc sulfide film having a thickness of 500 nm at a substrate temperature of 200 ° C. is formed by a vapor deposition method. Next, a barium tantalate (BaTa 2 O 6 ) thin film is formed to a thickness of 200 nm as a second dielectric layer 5 at a substrate temperature of 150 ° C. by a sputtering method as shown in FIG. Next, as in (e),
A conductive paste, for example, a silver paste containing a small amount of indium is printed on a predetermined area to form the external lead-out electrode 6. Next, curing of the printed external lead-out electrode 6 and the EL light-emitting layer 4
Activation in a nitrogen atmosphere containing a trace amount of oxygen
C. for 1 hour. Next, as shown in (f), an aluminum film is deposited as a back electrode 7 on a predetermined region to a thickness of 250 nm, a resist pattern is formed by a photolithographic method, and the aluminum film is etched with a weak alkaline solution. In the embodiment described above, a silver paste is used as the conductive paste, but any other paste may be used as long as it is a low-temperature firing type conductive paste. Here, the reason why the conductive paste was not cured in the air is that oxygen has a bad influence on the EL light emitting layer 4. However, when curing is performed in an oxygen-free state, the conductive paste and the second dielectric layer 5 are affected. As a result of the investigation, if the oxygen ratio was 2 to 5 vol.%, A panel having the same performance as that of the conventional thin film EL panel could be obtained without affecting the conductive paste.
発明の効果 以上のように本発明は外部導出電極を導電性ペースト
の印刷により形成し、その導電性ペーストの硬化とEL発
光体層の熱処理活性化を同時に行うことにより、従来の
外部導出電極の形成法である蒸着、パターン形成工程が
短縮でき、しかもEL発光体層の次にすぐ第二誘電体層の
成膜が行えるので工程の連続化が可能となる優れた薄膜
ELパネルの製造方法を実現できる。Effect of the Invention As described above, the present invention forms an external lead-out electrode by printing a conductive paste, and simultaneously performs the curing of the conductive paste and the activation of the heat treatment of the EL light-emitting layer, whereby the conventional lead-out electrode can be formed. An excellent thin film that can shorten the vapor deposition and pattern formation steps that are the formation method, and can perform the process continuation because the second dielectric layer can be formed immediately after the EL light emitting layer.
An EL panel manufacturing method can be realized.
第１図（ａ）〜（ｆ）は本発明の一実施例による薄膜EL
パネルの製造方法を示す工程別の平面図、第２図（ａ）
〜（ｆ）は第１図と同一工程を示す工程別断面図であ
る。 １……ガラス基板（透光性基板）、２……透明電極、３
……第一誘電体層、４……EL発光体層、５……第二誘電
体層、６……外部導出電極、７……背面電極。1 (a) to 1 (f) show a thin film EL according to an embodiment of the present invention.
FIG. 2 (a) is a plan view showing a method of manufacturing a panel in each step.
FIGS. 2F to 2F are cross-sectional views showing the same steps as those in FIG. 1 ... glass substrate (translucent substrate) 2 ... transparent electrode 3
... First dielectric layer, 4 EL light emitting layer, 5 second dielectric layer, 6 external lead-out electrode, 7 back electrode.
Claims (1)
EL発光体層および第二誘電体層を順次形成した後、導電
性ペーストを印刷して外部導出電極を形成し、EL発光体
層および外部導出電極を同時に熱処理し、その後背面電
極を形成する薄膜ELパネルの製造方法。A transparent electrode, a first dielectric layer,
After forming the EL light emitting layer and the second dielectric layer in order, a conductive paste is printed to form an external lead electrode, the EL light emitting layer and the external lead electrode are simultaneously heat-treated, and then a thin film for forming a back electrode EL panel manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025354A JP2760121B2 (en) | 1990-02-05 | 1990-02-05 | Method for manufacturing thin-film EL panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025354A JP2760121B2 (en) | 1990-02-05 | 1990-02-05 | Method for manufacturing thin-film EL panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03230493A JPH03230493A (en) | 1991-10-14 |
| JP2760121B2 true JP2760121B2 (en) | 1998-05-28 |
Family
ID=12163520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025354A Expired - Lifetime JP2760121B2 (en) | 1990-02-05 | 1990-02-05 | Method for manufacturing thin-film EL panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2760121B2 (en) |
-
1990
- 1990-02-05 JP JP2025354A patent/JP2760121B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03230493A (en) | 1991-10-14 |
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