JP2751473B2 - High thermal conductive insulating substrate and method of manufacturing the same - Google Patents
High thermal conductive insulating substrate and method of manufacturing the sameInfo
- Publication number
- JP2751473B2 JP2751473B2 JP27370989A JP27370989A JP2751473B2 JP 2751473 B2 JP2751473 B2 JP 2751473B2 JP 27370989 A JP27370989 A JP 27370989A JP 27370989 A JP27370989 A JP 27370989A JP 2751473 B2 JP2751473 B2 JP 2751473B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper
- aln
- high thermal
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、IC基板あるいはヒートシンクなどに適した
高熱伝導性で、かつ絶縁性をもった窒化アルミニウム
（AlN）系の基板及びその製造方法に関するものであ
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high thermal conductive and insulating aluminum nitride (AlN) -based substrate suitable for an IC substrate or a heat sink, and a method of manufacturing the same. Things.
［従来の技術］ IC基板用セラミックスとしては、従来アルミナが用い
られてきが、従来のアルミナ焼結体の熱伝導率では放熱
性が不十分であり、ICチップの発熱量の増大に十分対応
できなくなりつつある。そこで、このようなアルミナ基
板に代るものとして、高熱伝導率を有するAlNを用いた
基板あるいはヒートシンクなどが注目され、その実用化
のために多数の研究がなされている。[Prior art] Conventionally, alumina has been used as ceramics for IC substrates. However, the heat conductivity of the conventional alumina sintered body is insufficient, so that it can sufficiently cope with an increase in the heat generation of IC chips. Is disappearing. Therefore, as a substitute for such an alumina substrate, a substrate or a heat sink using AlN having a high thermal conductivity has attracted attention, and a number of studies have been made for its practical use.
このAlNは、本来材質的に高熱伝導性並びに高絶縁性
を有し、又、ベリリアとは違って毒性がないために、半
導体工業において特に絶縁材料やパッケージ材料として
有望視されている。This AlN has inherently high thermal conductivity and high insulation properties, and has no toxicity unlike beryllia. Therefore, it is expected to be particularly promising as an insulating material and a package material in the semiconductor industry.
しかしながら、このような興味ある特性を有する一方
で、AlN焼結体は金属あるいはガラス質等との接合強度
に問題がある。ところでこの焼結体は、その表面に直接
市販されているメタライズペーストを塗布する厚膜法も
しくは活性金属又金属の薄膜を蒸着などの手法で形成す
る薄膜法などを利用して、金属化層を付与した状態で使
用することが一般的である。しかしながら、このような
方法によっては実用に十分耐え得る接合強度を得ること
はできず、実際には金属化前又は金属化操作中に何等か
の手法で表面を改質し、他の例えば金属等との接合性を
改善する必要がある。However, while having such interesting properties, the AlN sintered body has a problem in bonding strength with metal or glass. By the way, this sintered body has a metallized layer formed by applying a commercially available metallizing paste directly to the surface of the sintered body, or a thin film method of forming a thin film of active metal or metal by vapor deposition. It is common to use it in the state provided. However, it is not possible to obtain a bonding strength that can sufficiently withstand practical use by such a method, and in fact, the surface is modified by some method before or during the metallization operation, and other materials such as metal are used. It is necessary to improve the bondability with the alloy.
このようなAlN焼結体の表面改質のための従来法とし
ては、AlN焼結体表面に酸化処理等を施して酸化物層を
形成する方法が知られている。すなわち、例えばAlN焼
結体表面にSiO2、Al2O3、ムライト、Fe2O3、CuO等の酸
化物層を形成する方法である。しかしながら、かかる酸
化物層はガラス層、アルミナ層などに対しては良好な親
和性を有し、強固な結合を生じるが、AlN焼結自体とは
親和性が小さく、信頼性に問題があるものと考えられ
る。又、AlN基板上にCu板を直接貼り合せることも提案
（特開昭59−40404号公報参照）されているが、ヒート
サイクル等に対する信頼性、接合強度の問題が指摘され
ている。As a conventional method for such surface modification of the AlN sintered body, a method of forming an oxide layer by subjecting the surface of the AlN sintered body to an oxidation treatment or the like is known. That is, for example, a method of forming an oxide layer of SiO 2 , Al 2 O 3 , mullite, Fe 2 O 3 , CuO, or the like on the surface of the AlN sintered body. However, such an oxide layer has a good affinity for a glass layer, an alumina layer, etc., and produces a strong bond, but has a low affinity for AlN sintering itself and has a problem in reliability. it is conceivable that. It has also been proposed to directly bond a Cu plate on an AlN substrate (see JP-A-59-40404), but it has been pointed out that there is a problem in reliability against heat cycles and the like and bonding strength.
［発明が解決しようとする課題］ 本発明は上記従来法の問題点を解決せんとするもの
で、高熱伝導AlN基板上に銅又は銅合金を強固に接合し
てなる基板及びその製造方法を提供せんとするものであ
る。[Problems to be Solved by the Invention] The present invention is to solve the problems of the above conventional method, and provides a substrate obtained by firmly joining copper or a copper alloy on a high thermal conductive AlN substrate and a method for manufacturing the same. It is something you want to do.
［課題を解決するための手段］ 本発明は、空孔を含む高融点金属をもって表面処理し
た窒化アルミニウム系基板に銅又は銅合金を加熱により
直接接合した高熱伝導性絶縁基板、並びに表面に空孔を
含む高融点金属層を形成した窒化アルミニウム系基板
に、銅又は銅合金よりなる粉末又は板を置き、加熱する
ことによって接合する高熱伝導性絶縁基板の製造方法で
ある。そして銅合金としては特にCu−Ｗ合金が適当であ
る。[Means for Solving the Problems] The present invention relates to a highly thermally conductive insulating substrate in which copper or a copper alloy is directly bonded to an aluminum nitride-based substrate surface-treated with a high melting point metal containing vacancies by heating, and vacancies in the surface. This is a method for manufacturing a high thermal conductive insulating substrate in which a powder or a plate made of copper or a copper alloy is placed on an aluminum nitride-based substrate on which a high melting point metal layer containing helium is formed and bonded by heating. A Cu-W alloy is particularly suitable as the copper alloy.
本発明において、絶縁基板としては高熱伝導のAlN基
板を用いるが、その材質には何等制限されず、通常添加
される焼結助剤の量や種類も限定されない。このAlN基
板上には高融点金属による表面処理層が形成される。高
融点金属としては、一般に用いられるMo系、Ｗ系等の使
用が可能である。高融点金属層の形成方法としてはAlN
未焼成シート上に高融点金属を主成分としたペーストを
塗布後1600℃以上の非酸化性雰囲気で焼成する方法ある
いは焼成したAlN基板に酸化物あるいはガラス成分を添
加した高融点金属を塗布し、1200℃以上の非酸化雰囲気
で焼成する方法が用いられる。いずれの方法において
も、高融点金属層は緻密質でなく、空孔を有する構造と
することがよい。空孔は開孔の状態で存在し、好ましく
は若干吸水する程度で、しかもAlNとの密着力は十分に
確保される条件を選定する必要がある。これは空孔が存
在しないと銅又は銅合金との接着力が不足し、空孔が多
いと、AlNとの接着力低くなってしまうからである。高
融点金属層上には、銅又は銅合金の粉末、板等を所望の
形状で配置し、そののち、非酸化性雰囲気中で銅又は銅
合金の融解温度以上に加熱し密着させる。好ましくは13
00℃以上に加熱する。銅又は銅合金の一部又は全てが融
解し、高融点金属層に含浸されることによって密着が達
成されると考えられる。In the present invention, an AlN substrate having high thermal conductivity is used as the insulating substrate. However, the material is not limited at all, and the amount and type of the sintering aid usually added are not limited. On this AlN substrate, a surface treatment layer made of a high melting point metal is formed. As the high melting point metal, generally used Mo-based, W-based, and the like can be used. AlN is used as the method for forming the refractory metal layer.
A method of applying a paste containing a high melting point metal as a main component on an unsintered sheet, followed by firing in a non-oxidizing atmosphere of 1600 ° C. or higher, or applying a high melting point metal containing an oxide or a glass component to a fired AlN substrate, A method of firing in a non-oxidizing atmosphere at 1200 ° C. or higher is used. In any method, the high melting point metal layer is preferably not dense and has a structure having pores. It is necessary to select a condition in which the pores are present in an open state, and preferably have such a degree that they slightly absorb water, and that the adhesion to AlN is sufficiently ensured. This is because if there are no holes, the adhesive force with copper or a copper alloy is insufficient, and if there are many holes, the adhesive force with AlN is low. On the high melting point metal layer, a copper or copper alloy powder, a plate or the like is arranged in a desired shape, and then heated and adhered to a temperature higher than the melting temperature of copper or copper alloy in a non-oxidizing atmosphere. Preferably 13
Heat above 00 ° C. It is considered that adhesion is achieved by melting or partially impregnating the copper or copper alloy into the refractory metal layer.
銅及び銅合金としては、無酸素銅が接着強度、導電率
等より好ましい。又、Ｗスケルトン中に銅を含浸したCu
−Ｗ合金は、更にAl2O3等とロウ付する場合等に好まし
い結果を得る。As copper and copper alloy, oxygen-free copper is more preferable than adhesive strength, electric conductivity and the like. In addition, Cu impregnated with copper in W skeleton
-W alloy to obtain a favorable result when such further with Al 2 O 3, or the like and wax.
［実施例］ 以下本発明を挙げて説明する。[Example] The present invention will be described below.
実施例１ AlN粉にY2O3を1.0％添加し、有機物としてPVBを加
え、ドクターブレード成形で得たAlNシートを70mm□に
切断した。シート上にはＷ粉末（平均粒度２μ）にAl2O
3粉20重量％添加し、更にビヒクルを添加し、調整した
ペーストをスクリーン印刷で塗布後、1800℃でN2中で焼
成した。Example 1 1.0% of Y 2 O 3 was added to AlN powder, PVB was added as an organic substance, and an AlN sheet obtained by doctor blade molding was cut into 70 mm square. W powder (average particle size 2μ) on the sheet with Al 2 O
3 powder 20% by weight was added, a vehicle was further added, the prepared paste was applied by screen printing, and then baked at 1800 ° C. in N 2 .
得られたAlN基板には吸水する程度のＷメタライズ層
が厚み10μ形成されていた。この基板上にCu粉（５μ）
を介し、Cu板0.2mm厚を置き、1250℃に加熱したところA
lNとCu板が強固に接着された。On the obtained AlN substrate, a W metallized layer having a thickness of 10 μm was formed so as to absorb water. Cu powder (5μ) on this substrate
Place a 0.2mm thick Cu plate through and heat to 1250 ° C
The lN and Cu plates were firmly bonded.
実施例２ Y2O3粉を1.0％添加したAlN粉を型押し、1900℃窒素気
流中で焼成したところ、50mm□×1.0mm厚の基板を得
た。熱伝導率は190w/mkであった。基板の両面にＷ粉末
（１μｍ）にAl2O3・CaO粉（５μｍ）を10重量％添加
し、更にビヒクルを加え調整したペーストをスクリーン
印刷し、1700℃窒素中で焼成したところ、AlN基板上に
ポーラスなＷ層（厚み10μ）を持った基板を得た。AlN
とＷの接着は、Al2O3・CaOを介してなされ、十分な接着
強度を示した。得られた基板上に10Cu−Ｗ金を厚み1mm
で置き、1300℃に加熱したところ、AlNとCu−Ｗ合金は
強固に接着された。Cu−Ｗ合金上には更にメタライズメ
ッキされたAl2O3基板のロウ付が可能であり、これらの
接着強度は十分にあることがわかった。Example 2 An AlN powder to which 1.0% of Y 2 O 3 powder was added was embossed and fired at 1900 ° C. in a nitrogen stream to obtain a substrate having a thickness of 50 mm × 1.0 mm. Thermal conductivity was 190 w / mk. 10 wt% of Al 2 O 3 .CaO powder (5 μm) was added to W powder (1 μm) on both sides of the substrate, and a paste prepared by further adding a vehicle was screen-printed and baked at 1700 ° C. in nitrogen. A substrate having a porous W layer (thickness: 10 μm) thereon was obtained. AlN
And W were bonded via Al 2 O 3 .CaO and exhibited sufficient bonding strength. 10 Cu-W gold on the obtained substrate 1 mm thick
And heated to 1300 ° C., the AlN and the Cu—W alloy were firmly bonded. Cu-W is on the alloy is capable of further brazing metallized plated the Al 2 O 3 substrate, it was found that these adhesive strength is sufficient.
［発明の効果］ 本発明は、AlN系基板にCu又はCu合金を接合強度が高
く直接接合してなるもので、高熱伝導性でかつ絶縁性を
持った基板材料が信頼性高く提供される。[Effects of the Invention] The present invention is obtained by directly bonding Cu or a Cu alloy to an AlN-based substrate with high bonding strength, and provides a highly thermally conductive and insulating substrate material with high reliability.
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｋ 3/38 Ｈ０５Ｋ 3/38 Ｄ (56)参考文献 特開 昭63−179734（ＪＰ，Ａ) 特開 昭62−88392（ＪＰ，Ａ) 特開 昭64−35981（ＪＰ，Ａ)Continuation of the front page (51) Int.Cl. 6 Identification symbol FI H05K 3/38 H05K 3/38 D (56) References JP-A-63-179734 (JP, A) JP-A-62-88392 (JP, A JP-A-64-35981 (JP, A)
Claims (3)
た窒化アルミニウム系基板に銅又は銅合金を加熱により
直接接合したことを特徴とする高熱伝導性絶縁基板。1. A high thermal conductive insulating substrate wherein copper or a copper alloy is directly bonded to an aluminum nitride substrate surface-treated with a high melting point metal containing holes by heating.
窒化アルミニウム系基板に、銅又は銅合金よりなる粉末
又は板を置き、加熱することによって接合することを特
徴とする高熱伝導性絶縁基板の製造方法。2. A high thermal conductivity, wherein a powder or a plate made of copper or a copper alloy is placed on an aluminum nitride-based substrate having a high-melting point metal layer containing vacancies formed on its surface, and joined by heating. A method for manufacturing an insulating substrate.
載の高熱伝導性絶縁基板の製造方法。3. The method according to claim 2, wherein the copper alloy is a Cu-W alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27370989A JP2751473B2 (en) | 1989-10-23 | 1989-10-23 | High thermal conductive insulating substrate and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27370989A JP2751473B2 (en) | 1989-10-23 | 1989-10-23 | High thermal conductive insulating substrate and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03137069A JPH03137069A (en) | 1991-06-11 |
| JP2751473B2 true JP2751473B2 (en) | 1998-05-18 |
Family
ID=17531466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27370989A Expired - Lifetime JP2751473B2 (en) | 1989-10-23 | 1989-10-23 | High thermal conductive insulating substrate and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2751473B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425390A (en) * | 2013-09-11 | 2015-03-18 | 精工爱普生株式会社 | Circuit board, method for manufacturing circuit board, electronic device, electronic apparatus, and moving object |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5561321A (en) * | 1992-07-03 | 1996-10-01 | Noritake Co., Ltd. | Ceramic-metal composite structure and process of producing same |
| JP3553157B2 (en) * | 1994-09-16 | 2004-08-11 | 新日本製鐵株式会社 | Ceramic structural members for precision machinery with excellent high-precision workability |
-
1989
- 1989-10-23 JP JP27370989A patent/JP2751473B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425390A (en) * | 2013-09-11 | 2015-03-18 | 精工爱普生株式会社 | Circuit board, method for manufacturing circuit board, electronic device, electronic apparatus, and moving object |
| JP2015056501A (en) * | 2013-09-11 | 2015-03-23 | セイコーエプソン株式会社 | Circuit board, method of manufacturing circuit board, electronic device, electronic apparatus, and moving body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03137069A (en) | 1991-06-11 |
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