JP2746440B2 - Mold for optical element molding - Google Patents
Mold for optical element moldingInfo
- Publication number
- JP2746440B2 JP2746440B2 JP1325704A JP32570489A JP2746440B2 JP 2746440 B2 JP2746440 B2 JP 2746440B2 JP 1325704 A JP1325704 A JP 1325704A JP 32570489 A JP32570489 A JP 32570489A JP 2746440 B2 JP2746440 B2 JP 2746440B2
- Authority
- JP
- Japan
- Prior art keywords
- mold
- coating
- optical element
- mold base
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
- C03B11/06—Construction of plunger or mould
- C03B11/08—Construction of plunger or mould for making solid articles, e.g. lenses
- C03B11/084—Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
- C03B11/086—Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2215/00—Press-moulding glass
- C03B2215/02—Press-mould materials
- C03B2215/08—Coated press-mould dies
- C03B2215/10—Die base materials
- C03B2215/12—Ceramics or cermets, e.g. cemented WC, Al2O3 or TiC
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2215/00—Press-moulding glass
- C03B2215/02—Press-mould materials
- C03B2215/08—Coated press-mould dies
- C03B2215/14—Die top coat materials, e.g. materials for the glass-contacting layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2215/00—Press-moulding glass
- C03B2215/02—Press-mould materials
- C03B2215/08—Coated press-mould dies
- C03B2215/30—Intermediate layers, e.g. graded zone of base/top material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、光学素子成形用型に関する。Description: TECHNICAL FIELD The present invention relates to an optical element molding die.
[従来の技術] 一般に、光学ガラスを加熱プレスすることにより所望
の光学素子を得ることが知られている。かかる加熱プレ
ス手段による場合は、光学素子成形用型の離型性の良い
ことが必要である。[Prior Art] It is generally known to obtain a desired optical element by hot pressing optical glass. In the case of using such heating press means, it is necessary that the mold for forming an optical element has good releasability.
従来、例えば特開昭61−197430号公報に開示されるよ
うに、離型性の向上等を目的として光学素子成形用型の
成形面に種々の被膜をPVD法により形成したものがあ
る。一方、光学素子成形用型の型基材としては、硬度,
耐熱性,耐酸化性等の点で優れる炭化けい素(SiC)や
窒化けい素(Si3N4)が多く用いられている。Conventionally, as disclosed in, for example, JP-A-61-197430, various coatings are formed on a molding surface of an optical element molding die by a PVD method for the purpose of improving releasability and the like. On the other hand, mold bases for optical element molding dies include hardness,
Silicon carbide (SiC) and silicon nitride (Si 3 N 4 ), which are excellent in heat resistance and oxidation resistance, are often used.
[発明が解決しようとする課題] しかし、加熱プレス手段による場合、光学素子成形用
型の成形面は、大きな熱衝撃と圧力を受ける。このため
に、PVD法により形成した被膜は、光学ガラスを成形し
ているうちに剥離を生じてくる。特に、SiCまたはSi3N4
により型基材を形成し、その上に被膜を設けた光学素子
成形用型の場合には、剥離が非常に顕著に現われる。[Problems to be Solved by the Invention] However, when using the heating press means, the molding surface of the optical element molding die receives a large thermal shock and pressure. For this reason, the coating formed by the PVD method peels off while the optical glass is being formed. In particular, SiC or Si 3 N 4
In the case of an optical element molding die in which a mold base material is formed and a coating is provided thereon, peeling appears very remarkably.
これは、SiCおよびSi3N4が極めて安定な物質であるた
め、その上にPVD法により被膜を設けても被膜が型基材
と化学結合をすることはほとんどありえないからであ
る。すなわち、型基材と被膜との間は、電子雲が不連続
な状態で弱い結合であると推定される。また、型基材と
被膜との間には、多数の構造欠陥やポアが存在するた
め、型基材と被膜との結合力が不十分なものとなり、光
学ガラスの成形により膜剥離が生じてくることとなるの
である。This is because SiC and Si 3 N 4 are extremely stable substances, and even if a coating is provided thereon by the PVD method, the coating hardly forms a chemical bond with the mold substrate. That is, it is presumed that the electron cloud is a weak bond in a discontinuous state between the mold substrate and the coating. In addition, since there are a number of structural defects and pores between the mold base and the coating, the bonding force between the mold base and the coating becomes insufficient, and film peeling occurs due to molding of the optical glass. It will come.
本発明は、かかる従来の問題点に鑑みてなされたもの
で、膜剥離がなく、型寿命の長い光学素子成形用型を提
供することを目的とする。The present invention has been made in view of such a conventional problem, and an object of the present invention is to provide a mold for molding an optical element which has no film peeling and has a long mold life.
[課題を解決するための手段] 上記目的を達成するために、本発明は、SiCまたはSi3
N4からなる型基材の少なくとも成形基礎面に50Å以上の
厚さの酸化層を形成し、この酸化層の上に被膜を形成し
て光学素子成形用型を構成したものである。[Means for Solving the Problems] In order to achieve the above object, the present invention relates to SiC or Si 3
Forming an oxide layer of greater than 50Å thick to at least the molding base face of the mold base material made of N 4, it is obtained by forming the optical element molding die to form a coating on the oxide layer.
本発明において、酸化層の厚さを50Åとしたのは、50
Å未満では型基材と被膜との結合力がほとんど増加せ
ず、膜剥離を減少させることができないからである。In the present invention, the thickness of the oxide layer is set to 50 °
If the value is less than Å, the bonding force between the mold base and the coating hardly increases, and the peeling of the film cannot be reduced.
第1図は、本発明の光学素子成形用型を示す縦断面図
で、型基材1はSiCまたはSi3N4により形成されている。
そして、この型基材1の成形基礎面1aには、型基材1の
表面を酸化させることにより、厚さ50Å以上の酸化層2
が形成されている。また、酸化層2の上には、被膜3が
形成されている。被膜3の形成は、例えばスパッタリン
グや真空蒸着等のPVD法,CVD法による。FIG. 1 is a longitudinal sectional view showing a mold for molding an optical element of the present invention, and a mold base 1 is formed of SiC or Si 3 N 4 .
Then, by oxidizing the surface of the mold base 1, an oxide layer 2 having a thickness of 50 mm or more is formed on the molding base surface 1 a of the mold base 1.
Are formed. On the oxide layer 2, a coating 3 is formed. The coating 3 is formed by, for example, a PVD method such as sputtering or vacuum evaporation, or a CVD method.
[作 用] 上記構成の光学素子成形用型において、型基材1と被
膜3とは、酸化層2を介して強固に結合されている。す
なわち、SiCまたはSi3N4が最も反応し易い元素は酸素で
あり、また被膜3として使用される材料の多くも酸素と
結合した状態が熱力学的に最も安定した状態であるから
である。[Operation] In the optical element molding die having the above configuration, the mold substrate 1 and the coating 3 are firmly bonded via the oxide layer 2. That is, the element that SiC or Si 3 N 4 most easily reacts with is oxygen, and most of the materials used as the coating 3 are most thermodynamically bonded to oxygen.
[実施例] (第1実施例) SiC焼結体からなる型基材をダイヤモンド砥石を用い
た研削加工により所望の最終製品に対応した形状に加工
し、さらに光学的要求の生じる成形基礎面に鏡面研摩を
施した。そして、その型基材を加熱炉に入れ、大気を導
入しながら1400℃で10時間加熱した。加熱後の酸化増量
の測定から、上記熱処理により型基材の表面に約200Å
の酸化層が形成されていることが確認できた。次に、そ
の酸化層の上に、CrNにYNを添加した混合層からなる被
膜をイオンビームスパッタリング法により形成した。こ
のスパッタリングに際しては、ターゲットとしてCr2Nと
Yとが、98:2の重量比で混合されたものを使用し、窒素
イオンビームをターゲットに当てて成膜を行なった。こ
の被膜中には、CrNの結晶が存在していることがX線回
折法により確認された。[Example] (First Example) A mold base made of a SiC sintered body is processed into a shape corresponding to a desired final product by grinding using a diamond whetstone, and is further formed on a forming base surface that requires optical requirements. Mirror polishing was applied. Then, the mold base was placed in a heating furnace and heated at 1400 ° C. for 10 hours while introducing air. From the measurement of the oxidation weight increase after heating, the heat treatment described
It was confirmed that an oxide layer was formed. Next, a film composed of a mixed layer of CrN and YN was formed on the oxide layer by an ion beam sputtering method. At the time of this sputtering, a target in which Cr 2 N and Y were mixed at a weight ratio of 98: 2 was used, and a film was formed by applying a nitrogen ion beam to the target. The presence of CrN crystals in this coating was confirmed by X-ray diffraction.
上記のようにして構成された本実施例の光学素子成形
用型について、型基材に対する被膜の付着力を調べるた
め、引っかき式の付着力試験機により付着力を測定した
ところ、2.15GPaの付着力を示した。なお、比較のた
め、型基材の表面を酸化させることなく、本実施例と同
様にして被膜を形成した従来の光学素子成形用型につい
て、同様の測定をしたところ、型基材に対する被膜の付
着力は1.67GPaであった。すなわち、本実施例の光学素
子成形用型における被膜は、従来のものに比して約1.3
倍の付着力を有していた。With respect to the optical element molding die of the present embodiment configured as described above, in order to examine the adhesion of the coating film to the mold base, the adhesion was measured by a scratch-type adhesion tester, and the value of 2.15 GPa was added. The strength was shown. For comparison, without oxidizing the surface of the mold base, a similar measurement was performed on a conventional optical element molding die in which a coat was formed in the same manner as in this example. The adhesive force was 1.67 GPa. That is, the coating in the optical element molding die of this embodiment is about 1.3 times as compared with the conventional one.
It had twice the adhesive force.
次表に、酸化層の厚さを種々変更した場合の被膜の付
着力を示した。The following table shows the adhesion of the coating when the thickness of the oxide layer was changed variously.
また、本実施例の光学素子成形用型および上記従来の
光学素子成形用型を用いて10,000ショットの光学ガラス
素子の成形を行なったところ、前者ではほとんど成形面
に膜剥離が生ぜず、十分な表面特性を維持していたのに
対し、後者では成形面に膜剥離が生じて型基材が露出
し、ガラスが融着してしまった。 In addition, when the optical glass element of 10,000 shots was molded using the optical element molding die of the present embodiment and the conventional optical element molding mold, film peeling hardly occurred on the molding surface in the former, and a sufficient amount was obtained. While the surface characteristics were maintained, in the latter, the film peeled off on the molding surface, exposing the mold substrate, and the glass was fused.
すなわち、本実施例によれば、SiC型基材を予め酸化
させた後に被膜を形成したため、型基材と被膜との密着
性が向上して被膜が剥離しにくくなり、長期間光学素子
成形用型として使用できる。That is, according to this example, since the coating was formed after the SiC type base material was oxidized in advance, the adhesion between the die base material and the coating was improved, and the coating was difficult to peel off. Can be used as a type.
なお、本実施例においては、被膜をCrNとYNとの混合
層としたが、他の窒化物,炭化物等でも同様の効果が得
られる。In the present embodiment, the coating is a mixed layer of CrN and YN, but the same effect can be obtained with other nitrides, carbides and the like.
(第2実施例) Si3N4焼結体からなる型基材をダイヤモンド砥石を用
いた研削加工により所望の最終製品に対応した形状に加
工し、さらに光学的要求の生じる成形基礎面に鏡面研摩
を施した。そして、この型基材を第2図に示すようなス
パッタリング装置にセッティングした。(Second Embodiment) A mold base made of a Si 3 N 4 sintered body is processed into a shape corresponding to a desired final product by grinding using a diamond grindstone, and further, a mirror surface is formed on a forming base surface that requires optical requirements. Polished. Then, the mold base was set in a sputtering apparatus as shown in FIG.
このスパッタリング装置は、チャンバ4内の下部にヒ
ータ5とターゲット6とが配置されている。ターゲット
6は、HfB2からなっている。また、チャンバ4内の上部
には、基板ボルタ7がヒータ5上方からターゲット6上
方まで移動可能に設けられている。8はチャンバ4に接
続されたガス導入部で、チャンバ4内に酸素を導入でき
るようになっている。9はチャンバ4内の真空度を測定
する真空計である。In this sputtering apparatus, a heater 5 and a target 6 are arranged in a lower part in a chamber 4. Target 6 is made of HfB 2. In the upper part of the chamber 4, a substrate volta 7 is provided movably from above the heater 5 to above the target 6. Reference numeral 8 denotes a gas introduction unit connected to the chamber 4 so that oxygen can be introduced into the chamber 4. Reference numeral 9 denotes a vacuum gauge for measuring the degree of vacuum in the chamber 4.
型基材10を基板ボルタ7に取り付けるとともに、基板
ホルダ7をヒータ5上方に設置した。次に、チャンバ4
内を1×10-3Pa程度まで排気した後、酸素を10Pa導入し
た。そして、基板ホルダ7に正の高電圧を印加し、型基
材10に酸素イオンを入射させるようにしながらヒータ5
で1時間、800℃で加熱した。この操作により、型基材1
0の表面に厚さ80Åの酸化層が形成された。その後、基
板ホルダ7をターゲット6上方に移動させ、再度1×10
-3Pa程度まで排気した。そして、アルゴンガスを1Pa導
入し、スパッタリングにより、型基材10の酸化層の上に
HfB2の被膜を形成した。The mold base 10 was attached to the substrate volta 7 and the substrate holder 7 was placed above the heater 5. Next, chamber 4
After the inside was evacuated to about 1 × 10 −3 Pa, 10 Pa of oxygen was introduced. Then, a high positive voltage is applied to the substrate holder 7 so that oxygen ions enter the mold base 10 while the heater 5
For 1 hour at 800 ° C. By this operation, the mold substrate 1
An oxide layer having a thickness of 80 ° was formed on the surface of No. 0. Thereafter, the substrate holder 7 is moved above the target 6 and again 1 × 10
Evacuation was performed to about -3 Pa. Then, 1 Pa of argon gas is introduced, and the sputtering is performed on the oxide layer of the mold base 10 by sputtering.
A coating of HfB 2 was formed.
このようにして得られた本実施例の光学素子成形用型
を用いて光学ガラス素子の成形を行なったところ、10,0
00ショット後もほとんど膜剥離はなく、十分な表面特性
を維持していた。When an optical glass element was molded using the optical element molding die of the present example thus obtained, it was found that 10,0
Even after the 00 shot, there was almost no film peeling, and sufficient surface characteristics were maintained.
すなわち、本実施例においても前記第1実施例と同様
の効果を得ることができる。さらに、本実施例において
は、型基材10を酸化させる工程と、型基材10に成膜する
工程とを同一装置内で行なうため、作業が容易になり、
また型基材10の酸化した表面に型基材10の移動時に大気
中のゴミが付着したり、ガスの吸着によって汚れるおそ
れがなくなるので、より一層被膜の付着力を向上させる
ことができる。That is, in the present embodiment, the same effects as in the first embodiment can be obtained. Further, in the present embodiment, the step of oxidizing the mold base 10 and the step of forming a film on the mold base 10 are performed in the same apparatus, so that the operation is facilitated,
In addition, since there is no danger of dust in the air adhering to the oxidized surface of the mold base 10 when the mold base 10 is moved or contamination due to gas adsorption, the adhesion of the coating film can be further improved.
(第3実施例) SiC焼結体からなる型基材をダイヤモンド砥石を用い
た研削加工により所望の最終製品に対応した形状に加工
し、さらに光学的要求の生じる成形基礎面に鏡面研摩を
施した。そして、その型基材を加熱炉に入れ、大気を導
入しながら1400℃で10時間加熱した。加熱後の酸化増量
の測定から、上記熱処理により型基材の表面に約200Å
の酸化層が形成されていることが確認できた。次に、そ
の酸化層の上に、CrNからなる被膜をHCD(ホロカソード
ディスチャージ)法により形成した。これは、Crを用い
て電子銃で溶融し、窒素雰囲気中で被膜したものであ
る。この被膜中には、CrNの結晶が存在していることが
X線回線法により確認された。(Third Embodiment) A mold base made of a SiC sintered body is processed into a shape corresponding to a desired final product by grinding using a diamond grindstone, and further, a mirror polishing is performed on a forming base surface that requires optical requirements. did. Then, the mold base was placed in a heating furnace and heated at 1400 ° C. for 10 hours while introducing air. From the measurement of the oxidation weight increase after heating, the heat treatment described
It was confirmed that an oxide layer was formed. Next, a film made of CrN was formed on the oxide layer by the HCD (holo cathode discharge) method. This is obtained by melting Cr using an electron gun and coating in a nitrogen atmosphere. The presence of CrN crystals in this coating was confirmed by the X-ray line method.
上記のようにして構成された本実施例の光学素子成形
用型について、型基材に対する被膜の付着力を調べるた
め、引っかき式の付着力試験機により付着力を測定した
ところ、前記従来のものに比して約1.21倍の付着力を有
していた。For the optical element molding die of the present embodiment configured as described above, in order to examine the adhesion of the coating to the mold substrate, when the adhesion was measured by a scratch-type adhesion tester, the conventional one was obtained. Had an adhesive force of about 1.21 times that of
[発明の効果] 以上のように、本発明の光学素子成形用型によれば、
SiCまたはSi3N4からなる型基材の表面に予め酸化層を形
成した後に被膜を形成したので、型基材と被膜との密着
性が向上し、膜剥離を防止でき、型寿命を著しく長くす
ることができる。[Effects of the Invention] As described above, according to the optical element molding die of the present invention,
Since a coating was formed after forming an oxide layer on the surface of the mold base made of SiC or Si 3 N 4 in advance, the adhesion between the mold base and the coat was improved, film peeling could be prevented, and the mold life was remarkably increased. Can be longer.
第1図は本発明の光学素子成形用型を示す縦断面図、第
2図は本発明の第2実施例で用いたスパッタリング装置
の概略構成図である。 1……型基材 1a……成形基礎面 2……酸化層 3……被膜FIG. 1 is a longitudinal sectional view showing an optical element molding die of the present invention, and FIG. 2 is a schematic configuration diagram of a sputtering apparatus used in a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Mold base material 1a ... Molding base surface 2 ... Oxide layer 3 ... Coating
フロントページの続き (56)参考文献 特開 昭63−98565(JP,A) 特開 昭62−7639(JP,A) 特開 平1−305828(JP,A) 特開 平2−149434(JP,A) 特開 平3−88731(JP,A) 特開 平2−289433(JP,A) 特開 昭61−197430(JP,A) 特公 昭61−10407(JP,B2)Continuation of the front page (56) References JP-A-63-98565 (JP, A) JP-A-62-7639 (JP, A) JP-A-1-305828 (JP, A) JP-A-2-149434 (JP) JP-A-3-888731 (JP, A) JP-A-2-289433 (JP, A) JP-A-61-197430 (JP, A) JP-B-61-10407 (JP, B2)
Claims (1)
材の少なくとも成形基礎面に50Å以上の厚さの酸化層を
形成し、この酸化層の上に被膜を形成したことを特徴と
する光学素子成形用型。An oxide layer having a thickness of 50 mm or more is formed on at least a molding base surface of a mold base made of silicon carbide or silicon nitride, and a coating is formed on the oxide layer. Mold for optical element molding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1325704A JP2746440B2 (en) | 1989-12-15 | 1989-12-15 | Mold for optical element molding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1325704A JP2746440B2 (en) | 1989-12-15 | 1989-12-15 | Mold for optical element molding |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03187928A JPH03187928A (en) | 1991-08-15 |
JP2746440B2 true JP2746440B2 (en) | 1998-05-06 |
Family
ID=18179777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1325704A Expired - Fee Related JP2746440B2 (en) | 1989-12-15 | 1989-12-15 | Mold for optical element molding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2746440B2 (en) |
-
1989
- 1989-12-15 JP JP1325704A patent/JP2746440B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03187928A (en) | 1991-08-15 |
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