JP2739419B2 - Substrate processing equipment - Google Patents
Substrate processing equipmentInfo
- Publication number
- JP2739419B2 JP2739419B2 JP21512893A JP21512893A JP2739419B2 JP 2739419 B2 JP2739419 B2 JP 2739419B2 JP 21512893 A JP21512893 A JP 21512893A JP 21512893 A JP21512893 A JP 21512893A JP 2739419 B2 JP2739419 B2 JP 2739419B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing
- cleaning
- processing liquid
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば半導体基板や液
晶用ガラス基板等の薄板状の被処理基板（以下単に基板
と称する）を表面処理するのに用いられる浸漬型の基板
処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an immersion type substrate processing apparatus used for surface-treating a thin substrate to be processed (hereinafter simply referred to as a substrate) such as a semiconductor substrate or a glass substrate for liquid crystal. It is.
【０００２】[0002]
【従来の技術】この種の基板処理装置としては、従来よ
り例えば特開平４−４２５３１号公報に開示されたもの
が知られている。この従来技術は、図１１に示すよう
に、単一の基板処理槽１０１内に複数種の処理液１０２
を順次供給して基板Ｗの表面処理を行うようにしたもの
である。2. Description of the Related Art As a substrate processing apparatus of this type, a substrate processing apparatus disclosed in, for example, JP-A-4-42531 has been known. According to this conventional technique, as shown in FIG.
Are sequentially supplied to perform the surface treatment of the substrate W.
【０００３】即ち、処理液１０２中に複数の基板Ｗを浸
漬して基板Ｗの表面処理をなすオーバーフロー型の基板
処理槽１０１と、基板処理槽１０１の下部より複数種の
処理液１０２を供給する処理液供給部１４０とを具備し
て成り、上記処理液供給部１４０は、基板処理槽１０１
の下部に連結した処理液供給管１０３と、処理液供給管
１０３にそれぞれ処理液導入弁１０８A〜１０８C及び流
量調節器１０７A〜１０７Cを介して連通した複数個の処
理液貯留容器１０６A〜１０６Cと、純水導入弁１０８D
及び流量調節器１０７Dを介して連通した純水供給源１
０６Dを備え、各導入弁１０８A〜１０８Dを選択的に開
閉制御して所定の処理液１０２を基板処理槽１０１へ供
給するように構成されている。That is, an overflow type substrate processing tank 101 for immersing a plurality of substrates W in a processing liquid 102 to perform surface treatment of the substrate W, and supplying a plurality of types of processing liquids 102 from the lower part of the substrate processing tank 101. A processing liquid supply unit 140, and the processing liquid supply unit 140
And the treatment liquid supply pipe 103 which is connected to the lower portion of the processing liquid respectively processing solution introduction valve 108 A -108 supply pipe 103 C and a flow rate adjuster 107 A to 107 a plurality of processing solution which communicates via a C reservoir 106 A to 106 C and pure water introduction valve 108 D
And pure water supply source in communication via the flow controller 107 D 1
Comprises a 06 D, and is configured to predetermined processing liquid 102 each inlet valve 108 A -108 D selectively opening and closing control to to supply to the substrate processing chamber 101.
【０００４】上記処理液貯留容器１０６A〜１０６Cの
中、例えば処理液貯留容器１０６Aには過酸化水素ＱA、
１０６Bには塩酸ＱB、１０６Cにはフッ化水素のような
エッチング剤ＱCなどが貯溜されている。そして、基板
処理槽１０１はこれら複数種の表面処理毎に処理液１０
２の置換が可能なオーバーフロー型の処理槽として構成
され、オーバーフローした処理液はドレン(図示省略)へ
排出される。[0004] Among the above-described processing liquid storage container 106 A - 106 C, for example, the processing liquid storage container 106 A hydrogen peroxide Q A,
The 106 B in hydrochloric Q B, 106 C such etchants Q C, such as hydrogen fluoride are reservoir. Then, the substrate processing bath 101 stores the processing liquid 10 for each of the plurality of types of surface processing.
2 is configured as an overflow-type processing tank capable of replacing, and the overflowed processing liquid is discharged to a drain (not shown).
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術では、基
板処理槽１０１が一つであるため、処理能力（スループ
ット）が低下する。そこで、スループットを向上させる
ために、この種の基板処理装置（いわゆる基板処理ユニ
ット）を単に複数台併設することも考えられるが、これ
に合わせると複数セットの処理液貯溜容器１０６A〜１
０６Cが必要になり、全体として設置スペースが大きく
なる。本発明は、このような事情に鑑みてなされたもの
で、スループットを向上させ、処理装置全体の設置スペ
ースを小さくすることを技術的課題とする。In the above prior art, since there is only one substrate processing tank 101, the processing capacity (throughput) is reduced. Therefore, in order to improve the throughput, it is conceivable to simply features a plurality of this kind of substrate processing device (a so-called substrate processing unit), the processing liquid reservoir chamber 106 A to 1 multiple sets Combined thereto
06 C is required, and the installation space as a whole increases. The present invention has been made in view of such circumstances, and has as its technical object to improve throughput and reduce the installation space of the entire processing apparatus.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明は前記従来技術を以下のように改良した。即
ち、本発明は、処理液中に基板を浸漬して基板の表面処
理をなすオーバーフロー型の基板処理槽と、基板処理槽
に複数種の処理液を供給する処理液供給部と、基板処理
槽よりオーバーフローした処理液を排出する処理液排出
部とを具備して成り、上記処理液供給部は、基板処理槽
に連結した処理液供給管と、処理液供給管にそれぞれ処
理液導入弁を介して連通した複数個の処理液貯留容器と
を備え、各処理液導入弁を選択的に開閉制御して所定の
処理液を処理液供給管へ導入するように構成した基板処
理装置において、上記基板処理槽を複数個並設し、各基
板処理槽の処理液供給管に処理液導入弁を接続し、上記
処理液貯留容器から導出した処理液導入管を分岐し、各
分岐した処理液導入管をそれぞれ前記処理液導入弁を介
して各基板処理槽の処理液供給管に接続し、各基板処理
槽へ複数種の処理液を供給するように構成したことを特
徴とする基板処理装置である。上記基板処理槽は、基板
を一括処理するもの、間欠的に逐次処理するものの両方
を含む。In order to solve the above problems, the present invention has improved the above prior art as follows. That is, the present invention relates to an overflow-type substrate processing tank for immersing a substrate in a processing liquid to perform surface treatment of the substrate, and a substrate processing tank.
Made by including a treatment liquid supply unit for supplying a plurality of kinds of processing liquid and a processing liquid discharging portion for discharging the processing liquid overflowing from the substrate processing tank, the processing solution supply unit, the substrate treating tank
A treatment liquid supply pipe coupled to the processing liquid respectively to the supply pipe through the treatment liquid inlet valve and a plurality of the processing liquid storage container communicating, given the processing liquid introduction valve selectively opening and closing control to In a substrate processing apparatus configured to introduce a processing liquid into a processing liquid supply pipe, a plurality of the substrate processing tanks are arranged in parallel, and a processing liquid introduction valve is connected to a processing liquid supply pipe of each substrate processing tank. The processing liquid introduction pipes derived from the liquid storage vessels are branched, and the branched processing liquid introduction pipes are connected to the processing liquid supply pipes of the respective substrate processing tanks via the processing liquid introduction valves, respectively. A substrate processing apparatus configured to supply a type of processing liquid. The above-mentioned substrate processing tank includes both one for batch processing of substrates and one for intermittent sequential processing.
【０００７】[0007]
【作 用】各基板処理槽には、各処理液貯留容器から分
岐導出した処理液導入管が処理液導入弁を介して接続さ
れており、複数種の処理液が各基板処理槽へ順次供給さ
れる。つまり、処理液貯留容器は並設した複数個の基板
処理槽に対して各処理液毎に１つ設ければよく、複数の
基板処理槽毎に複数個設ける必要はない。また、本発明
では、並設した複数個の基板処理槽により、多数の基板
の表面処理が並行して行われる。これによりスループッ
トが向上する。 To the work for Each substrate processing tank, processing solution introducing pipe branching derived from the processing liquid storage container is connected via a processing liquid inlet valve, sequentially supplied plurality of kinds of processing liquid to the substrate treatment bath Is done. That is, one processing liquid storage container may be provided for each of the plurality of substrate processing tanks arranged in parallel for each processing liquid, and it is not necessary to provide a plurality of processing liquid storage vessels for each of the plurality of substrate processing tanks. In the present invention, the surface treatment of a large number of substrates is performed in parallel by the plurality of substrate processing tanks arranged in parallel. This improves the throughput.
【０００８】[0008]
【実施例】以下、本発明の実施例を図面に基づいて述べ
る。図１は実施例１を示す浸漬型基板洗浄装置の洗浄処
理部の概略系統図、図２は導入弁連結管周辺の一部切欠
概略背面図、図３は図２の薬液導入弁のＩ−Ｉ線縦断面
図、図４はＮ2ガスによる洗浄液圧送形態を示す貯留容
器周辺の要部系統図である。また、図８は浸漬型基板洗
浄装置の概略斜視図、図９は同洗浄装置の概略平面図、
図１０は同洗浄装置の概略縦断面図である。本基板洗浄
装置５０は、洗浄液供給部の余分な重複配置をやめて、
基板洗浄槽１を複数個設け、各基板洗浄槽１・１…内で
複数種の一連の表面処理を成し、装置全体をコンパクト
化したものである。Embodiments of the present invention will be described below with reference to the drawings. 1 is a schematic system diagram of a cleaning section of a immersion type substrate cleaning apparatus according to a first embodiment, FIG. 2 is a partially cutaway schematic rear view around an introduction valve connecting pipe, and FIG. FIG. 4 is a main part system diagram around the storage container showing a cleaning liquid pumping mode using N 2 gas. 8 is a schematic perspective view of the immersion type substrate cleaning apparatus, FIG. 9 is a schematic plan view of the cleaning apparatus,
FIG. 10 is a schematic vertical sectional view of the cleaning apparatus. The present substrate cleaning apparatus 50 eliminates the redundant overlapping arrangement of the cleaning liquid supply unit,
A plurality of substrate cleaning tanks 1 are provided, and a plurality of types of surface treatments are performed in each of the substrate cleaning tanks 1.
【０００９】即ち、図８〜図１０に示すように、上記基
板洗浄装置５０は、基板収容カセットＣの搬入搬出部５
１と、カセットＣから基板Ｗを取り出し又はカセットＣ
内へ基板Ｗを装填する基板移載部６０と、カセットＣの
搬入搬出部５１と基板移載部６０との間でカセットＣを
移載するカセット移載ロボット５５と、複数の基板を一
括して洗浄する浸漬型基板洗浄処理部６５と、基板Ｗの
液切り基板乾燥部７０と、基板移載部６０でカセットＣ
から取り出した複数の基板Ｗを一括保持して上記洗浄処
理部６５及び基板乾燥部７０に搬送する基板搬送ロボッ
ト７５とから構成される。That is, as shown in FIGS. 8 to 10, the substrate cleaning apparatus 50 includes a loading / unloading section 5 for the substrate storage cassette C.
1 and the substrate W is taken out of the cassette C or the cassette C
A substrate transfer unit 60 for loading the substrate W therein, a cassette transfer robot 55 for transferring the cassette C between the loading / unloading unit 51 of the cassette C and the substrate transfer unit 60, and a plurality of substrates are collectively provided. Substrate cleaning processing unit 65 for cleaning the substrate, a draining substrate drying unit 70 for the substrate W, and a cassette C in the substrate transfer unit 60.
And a substrate transfer robot 75 that collectively holds a plurality of substrates W taken out of the substrate and transports the substrates W to the cleaning processing unit 65 and the substrate drying unit 70.
【００１０】上記カセット移載ロボット５５は、図８に
示すように、昇降及び回転自在で、矢印Ａ方向に移動可
能に構成され、搬入搬出部５１に搬入されてきたカセッ
トＣを基板移載部６０のテーブル６１上に移載し、ま
た、洗浄済み基板を収容したカセットＣを当該テーブル
６１から搬入搬出部５１へ移載するように構成される。
上記基板搬送ロボット７５は、図８〜図１０に示すよう
に、矢印Ｂ方向に移動可能に設けられ、上記基板移載部
６０のリフター６４から受け取った複数の基板Ｗを基板
搬送ロボット７５の基板挟持アーム７６で保持し、移動
部７７に沿って洗浄処理部６５内及び基板乾燥部７０内
へ順次搬送するように構成される。As shown in FIG. 8, the cassette transfer robot 55 is configured to be movable up and down and rotatable and movable in the direction of arrow A, and to transfer the cassette C carried into the carry-in / out section 51 to the substrate transfer section. The cassette C containing the cleaned substrates is transferred from the table 61 to the loading / unloading section 51.
As shown in FIGS. 8 to 10, the substrate transfer robot 75 is provided movably in the direction of arrow B, and transfers a plurality of substrates W received from the lifter 64 of the substrate transfer unit 60 to the substrate transfer robot 75. It is configured to be held by the holding arm 76 and transported along the moving unit 77 into the cleaning processing unit 65 and the substrate drying unit 70 sequentially.
【００１１】上記浸漬型の洗浄処理部６５は、図８〜図
１０に示すように、オーバーフロー型の基板洗浄槽１を
３個並設して成り、各基板洗浄槽１に昇降可能に設けた
基板保持具６６により、前記基板搬送ロボット７５から
受け取った複数の基板Ｗを当該基板洗浄槽１内に浸漬可
能に構成される。As shown in FIGS. 8 to 10, the immersion type cleaning processing section 65 includes three overflow type substrate cleaning tanks 1 arranged side by side. The plurality of substrates W received from the substrate transport robot 75 can be immersed in the substrate cleaning tank 1 by the substrate holder 66.
【００１２】上記基板乾燥部７０は、例えば本出願人の
提案に係る特開平１−２５５２２７号公報に開示したよ
うに、基板Ｗの主平面の中心近傍を回転中心として、回
転遠心力で液切り乾燥する乾燥処理槽７１で構成され
る。尚、この基板乾燥部７０は、当該遠心式のものに替
えて、有機溶剤等を使用した乾燥方式、又はこれに加え
て加熱蒸気や減圧による乾燥方式により乾燥を促進する
ようにしても差し支えない。As disclosed in, for example, Japanese Patent Application Laid-Open No. 1-255227 proposed by the present applicant, the substrate drying unit 70 drains liquid by a rotational centrifugal force around the center of the main plane of the substrate W as the center of rotation. It comprises a drying treatment tank 71 for drying. The substrate drying unit 70 may be replaced with the centrifugal type, and may be dried by using a drying method using an organic solvent or the like, or by using a drying method using heated steam or reduced pressure. .
【００１３】上記基板洗浄装置５０のレイアウトとして
は、図８〜図１０に示すように、クリーンルーム作業域
３０に臨む前方から保全用作業域３１に臨む後方に向か
って前記カセットＣの搬入搬出部５１、基板移載部６
０、基板乾燥部７０及び洗浄処理部６５を順番に配置す
る。また、図８及び図１０に示すように、上記洗浄処理
部６５の３つの基板洗浄槽１の下部に洗浄液の給排用配
管室２０を、また、この給排用配管室２０の下部に洗浄
用処理液貯留容器６を上下３段に配置する。さらに、図
８及び図９に示すように、上記基板移載部６０・基板乾
燥部７０・洗浄処理部６５の右側に基板搬送ロボット７
５の移動部７７を前後方向に形成し、これらの左側の空
間で、前記基板移載部６０よりも後方の空間をメンテナ
ンス・スペース９０として形成する。尚、メンテナンス・
スペース９０の床部には複数の配管、バルブ等が敷設さ
れる。As shown in FIGS. 8 to 10, the layout of the substrate cleaning apparatus 50 is as follows: from the front facing the clean room work area 30 to the rear facing the maintenance work area 31; , Substrate transfer section 6
0, the substrate drying unit 70 and the cleaning processing unit 65 are sequentially arranged. As shown in FIGS. 8 and 10, a cleaning liquid supply / discharge pipe chamber 20 is provided below the three substrate cleaning tanks 1 of the cleaning processing section 65, and a cleaning liquid supply / discharge pipe chamber 20 is provided below the supply / discharge pipe chamber 20. Treatment liquid storage containers 6 are arranged in three upper and lower stages. Further, as shown in FIGS. 8 and 9, the substrate transfer robot 7 is located on the right side of the substrate transfer section 60, the substrate drying section 70, and the cleaning section 65.
5 is formed in the front-rear direction, and a space behind the substrate transfer unit 60 is formed as a maintenance space 90 in these left spaces. In addition, maintenance
A plurality of pipes, valves and the like are laid on the floor of the space 90.
【００１４】即ち、本基板洗浄装置５０では、洗浄処理
部６５の基板洗浄槽１と、給排用配管室２０と、洗浄用
処理液貯留容器６とを上下３段に積み上げる(即ち、縦方
向にレイアウトする)ので、これらの積み上げ部の左側
に臨んだエリアにメンテナンス・スペース９０を確保で
きる。換言すると、図９に示すように、洗浄処理部６５
や基板移載部６０などの各種作業ブロックを平面視でＬ
字状にまとめることにより、基板洗浄装置５０内の余剰
空間をメンテナンス・スぺース９０に設定できる。ま
た、主に洗浄処理部６５を縦向きに積み上げることによ
り、基板洗浄装置５０の全体をコンパクトにまとめてク
リーンルーム全体の省スペース化を効率良く図れるう
え、当該装置の設置数が増えるほど、クリーンルームに
おけるスペースの有効利用率を一層高められる。That is, in the present substrate cleaning apparatus 50, the substrate cleaning tank 1, the supply / discharge piping chamber 20, and the cleaning processing liquid storage container 6 of the cleaning processing section 65 are stacked up and down in three stages (ie, in the vertical direction). Therefore, a maintenance space 90 can be secured in an area facing the left side of these stacked portions. In other words, as shown in FIG.
Various work blocks such as the board transfer unit 60 and the
By arranging them in a letter shape, a surplus space in the substrate cleaning apparatus 50 can be set as the maintenance space 90. In addition, by mainly stacking the cleaning processing units 65 in a vertical direction, the entire substrate cleaning apparatus 50 can be compactly combined to efficiently save space in the entire clean room, and as the number of installed apparatuses increases, the clean room The effective utilization rate of the space can be further increased.
【００１５】また、当該洗浄処理部６５の基板洗浄槽１
及び基板乾燥部７０のレイアウトでは、図８〜図１０に
示すように、保全用作業域３１に臨む奥側からクリーン
ルーム作業域３０に臨む前側に向かって、３つのオーバ
ーフロー型の基板洗浄槽１と、乾燥処理部７０と前記基
板移載部６０とが順番に配列する。The substrate cleaning tank 1 of the cleaning section 65
In the layout of the substrate drying unit 70, as shown in FIGS. 8 to 10, three overflow type substrate cleaning tanks 1 are arranged from the back side facing the maintenance work area 31 to the front side facing the clean room work area 30. The drying section 70 and the substrate transfer section 60 are sequentially arranged.
【００１６】即ち、上記基板乾燥部７０は洗浄処理部６
５と基板移載部６０の間に配置されるので、洗浄処理さ
れた基板Ｗを可能な限り速く乾燥させ、カセットＣに戻
して搬入搬出部５１から効率良く搬出できる。その反
面、この基板乾燥工程はカセットＣへの戻しに対する時
間的制約を強くは受けず、乾燥処理の完了から基板移載
部６０への戻しの間に待機時間を取れるので、作業工程
の面で隣接状の基板移載部６０に対して乾燥処理部７０
にバッファ的な役割を担わせることができる。That is, the substrate drying section 70 includes the cleaning section 6
Since the substrate W is disposed between the substrate transfer section 5 and the substrate transfer section 60, the substrate W after the cleaning processing can be dried as quickly as possible, returned to the cassette C, and efficiently carried out of the carry-in / carry-out section 51. On the other hand, the substrate drying process is not strongly restricted by the time for returning to the cassette C, and a waiting time can be taken between the completion of the drying process and the return to the substrate transfer unit 60. The drying processing unit 70 is provided for the adjacent substrate transfer unit 60.
Can act as a buffer.
【００１７】また、通常、酸洗浄処理には昇温した酸を
使用するので、酸の蒸気やミストが発生し易いが、例え
ば、クリーンルーム作業域３０から最も遠い奥側の基板
洗浄槽１でこの酸洗浄処理を実施する場合には、クリー
ンルーム作業域３０への悪影響を防止して作業の安全性
を確保できる。In addition, since an acid which has been heated is usually used for the acid cleaning treatment, vapor or mist of the acid is likely to be generated. For example, in the substrate cleaning tank 1 located farthest from the clean room work area 30, the acid is removed. When the acid cleaning process is performed, adverse effects on the clean room work area 30 can be prevented, and the safety of the work can be ensured.
【００１８】上記オーバーフロー型の洗浄処理部６５
は、図１(Ａ)に示すように、洗浄液中に複数の基板Ｗを
一括して浸漬して基板Ｗの表面洗浄を成す３つの基板洗
浄槽１と、各基板洗浄槽１の下部より複数種の洗浄液を
供給する洗浄液供給部４と、各基板洗浄槽１よりオーバ
ーフローした洗浄液を排出する洗浄液排出部４０とを具
備して成る。The overflow type cleaning section 65
As shown in FIG. 1 (A), three substrate cleaning tanks 1 for immersing a plurality of substrates W in a cleaning solution at a time to clean the surface of the substrates W are provided. The apparatus includes a cleaning liquid supply unit 4 for supplying a type of cleaning liquid, and a cleaning liquid discharge unit 40 for discharging the cleaning liquid overflowing from each substrate cleaning tank 1.
【００１９】上記基板洗浄槽１は、図１(Ａ)に示すよう
に、石英ガラス製で側面視略Ｖ字状・平面視略矩形状に
形成され、その下部に洗浄液供給管７を連結して成り、
基板洗浄槽１内に洗浄液の均一な上昇流を形成して基板
Ｗを表面処理するとともに、洗浄液を複数種の洗浄処理
毎に、迅速に置換し得るオーバーフロー槽として構成さ
れる。As shown in FIG. 1A, the substrate cleaning tank 1 is made of quartz glass and formed in a substantially V-shape in a side view and a substantially rectangular shape in a plan view. Consisting of
A uniform upward flow of the cleaning liquid is formed in the substrate cleaning tank 1 to perform a surface treatment on the substrate W, and the overflow is configured as an overflow tank that can quickly replace the cleaning liquid for each of a plurality of types of cleaning processing.
【００２０】当該基板洗浄槽１は石英ガラス製に限ら
ず、例えば、石英ガラスを腐食させてしまうＨＦ等を洗
浄液に用いる場合には、耐食性を有する四フッ化エチレ
ン樹脂等の樹脂製材料で形成したものでも良い。但し、
洗浄処理部６５は４つ以上のオーバーフロー型基板洗浄
槽１を並設しても差し支えない。The substrate cleaning tank 1 is not limited to quartz glass. For example, when HF or the like that corrodes quartz glass is used as a cleaning liquid, the substrate cleaning tank 1 is formed of a corrosion-resistant resin material such as ethylene tetrafluoride resin. May be done. However,
The cleaning section 65 may include four or more overflow type substrate cleaning tanks 1 arranged side by side.
【００２１】前記洗浄液排出部４０は、図１(Ａ)に示す
ように、上記基板洗浄槽１の上側部に付設したオーバー
フロー液回収部４１と、オーバーフローした洗浄液を排
液管４２を介して廃棄する排液ドレン４３とから構成さ
れる。As shown in FIG. 1 (A), the cleaning liquid discharge section 40 is provided with an overflow liquid recovery section 41 attached to the upper portion of the substrate cleaning tank 1 and a cleaning liquid which has overflowed through a drain pipe 42. And a drainage drain 43.
【００２２】上記洗浄液供給部４は、図１(Ａ)に示すよ
うに、基板洗浄槽１の下部に連結した洗浄液供給管７
と、当該洗浄液供給管７に夫々洗浄液導入弁８を介して
連結した複数の洗浄液貯留容器６とを具備して成り、各
洗浄液導入弁８を選択的に開閉制御して所定の洗浄液を
圧送手段２５により洗浄液供給管７へ導入可能に構成さ
れる。各洗浄液供給管７には給排液切換弁１３とスタテ
ィックミキサー１４と導入弁連結管１６が流通上手側に
順次設けられ、導入弁連結管１６に複数個の上記洗浄液
導入弁８を連結する（即ち、各基板洗浄槽１の下部の洗
浄液供給管７にそれぞれ洗浄液導入弁８を接続する）と
ともに、開閉弁２７を介して純水供給管３を連結して、
基板洗浄槽１に当該連結管１６を経て純水ＤWを供給可
能に構成する。As shown in FIG. 1A, the cleaning liquid supply section 4 has a cleaning liquid supply pipe 7 connected to a lower portion of the substrate cleaning tank 1.
And a plurality of cleaning liquid storage containers 6 connected to the cleaning liquid supply pipe 7 via cleaning liquid introduction valves 8, respectively. The cleaning liquid introduction valves 8 are selectively opened and closed to pressurize a predetermined cleaning liquid. 25 allows the cleaning liquid supply pipe 7 to be introduced. A supply / drainage switching valve 13, a static mixer 14, and an introduction valve connecting pipe 16 are sequentially provided on each cleaning liquid supply pipe 7 on the upstream side of the flow, and a plurality of the cleaning liquid introduction valves 8 are connected to the introduction valve connecting pipe 16 ( That is, the cleaning liquid introduction valve 8 is connected to the cleaning liquid supply pipe 7 below the substrate cleaning tank 1), and the pure water supply pipe 3 is connected via the on-off valve 27.
Pure water DW can be supplied to the substrate cleaning tank 1 through the connection pipe 16.
【００２３】図１(Ａ)に示すように、上記洗浄液貯留容
器６から導出した洗浄液導入管１０の下流側を分岐し、
各分岐した洗浄液導入管１０をそれぞれ前記洗浄液導入
弁８を介して各基板洗浄槽１の下部の洗浄液供給管７に
接続し、１セットの貯留容器６の各種の洗浄液を３個の
基板洗浄槽１に夫々分岐供給可能に構成する。即ち、後
述する圧送ポンプ１５の吐出側を３本の洗浄液供給管７
Aに分岐し、分岐した各洗浄液供給管７A・７A・７Aの下流
部を夫々前記洗浄液導入弁８Aを介して上記３個の基板
洗浄槽１・１・１に接続し、各基板洗浄槽１に複数種の洗
浄液を供給するように構成するのである。尚、図１(Ａ)
では、洗浄液導入弁８Aより導入される一種類の洗浄液
ＱAの送給について説明したが、他の種類の洗浄液ＱB、
ＱC、ＱD、ＱEの送給についても同様に構成される。As shown in FIG. 1A, the downstream side of the cleaning liquid introduction pipe 10 derived from the cleaning liquid storage container 6 is branched,
Each of the branched cleaning liquid introduction pipes 10 is connected to the cleaning liquid supply pipe 7 below the substrate cleaning tank 1 via the cleaning liquid introduction valve 8, respectively, and the various cleaning liquids in one set of storage containers 6 are supplied to three substrate cleaning tanks. 1 are configured so as to be capable of branch supply. That is, the discharge side of the pressure pump 15 described later is connected to three cleaning liquid supply pipes 7.
Branches to A, the downstream portion of the branch the cleaning liquid supply pipe 7 and A-7 A-7 A through each said cleaning liquid introducing valve 8 A connected to the three substrate cleaning tank 1, 1, 1, each The configuration is such that a plurality of types of cleaning liquids are supplied to the substrate cleaning tank 1. FIG. 1 (A)
In has been described feeding of one type of cleaning liquid Q A is introduced from the cleaning liquid introduction valve 8 A, other types of cleaning liquid Q B,
Q C, Q D, the same configuration applies to the delivery of Q E.
【００２４】上記純水供給管３は常温の又は所定温度に
加熱した純水ＤWを供給する純水の主要通路と成るが、
純水ＤWは基板の表面酸化を防ぐうえで、脱酸素処理を
施したものを用いるのが好ましい。上記給排液切換弁１
３は常時純水ＤWや洗浄液を基板洗浄槽１へ供給し、必
要に応じて基板洗浄槽１内の洗浄液を排液管４２を介し
て排液ドレン４３の側へ排出するものである。The pure water supply pipe 3 serves as a main passage of pure water for supplying pure water DW at room temperature or heated to a predetermined temperature.
It is preferable to use pure water DW which has been subjected to a deoxidation treatment in order to prevent oxidation of the surface of the substrate. Supply / drainage switching valve 1
Numeral 3 always supplies pure water DW or a cleaning liquid to the substrate cleaning tank 1, and discharges the cleaning liquid in the substrate cleaning tank 1 to the drain drain 43 via the drain pipe 42 as necessary.
【００２５】本実施例１では、図１(Ａ)に示すように、 各基板洗浄槽１の下部には、各洗浄液貯留容器６から
分岐導出した洗浄液導入管１０が洗浄液導入弁８を介し
て接続されており、複数種の洗浄液ＱA〜ＱEが各貯留容
器６から各基板洗浄槽１へ順次供給される。 オーバーフローした洗浄液ＱA〜ＱEは、排液管４２か
ら排液ドレン４３に排出される。 この結果、基板洗浄槽１内で複数種の洗浄処理を行うに
は、３個の基板洗浄槽１・１・１に対して複数種の洗浄液
貯溜容器６を１セット配置すれば足り、複数セットを重
複配置する必要はなくなる。また、並設した３個の基板
洗浄槽１により、多数の基板表面を並行処理できるの
で、スループットが向上する。In the first embodiment, as shown in FIG. 1A, a cleaning liquid introduction pipe 10 branched from each cleaning liquid storage vessel 6 is provided at a lower portion of each substrate cleaning tank 1 through a cleaning liquid introduction valve 8. A plurality of types of cleaning liquids Q A to Q E are sequentially supplied from each storage container 6 to each substrate cleaning tank 1. Overflowing the cleaning liquid Q A to Q E is discharged from the drain pipe 42 to the liquid discharge drain 43. As a result, in order to perform a plurality of types of cleaning processes in the substrate cleaning tank 1, it is sufficient to arrange one set of a plurality of types of cleaning liquid storage containers 6 for the three substrate cleaning tanks 1.1.1. Need not be overlapped. In addition, since a large number of substrate surfaces can be processed in parallel by the three substrate cleaning tanks 1 arranged in parallel, the throughput is improved.
【００２６】しかも、上記オーバーフロー型の洗浄処理
部６５では、一般的に、洗浄液を基板洗浄槽１の上部か
らオーバーフローさせるので、基板洗浄槽１内の洗浄液
を全部排出せずとも複数種の洗浄処理毎に洗浄液の置換
が可能であり、一連の洗浄処理が完了するまで基板Ｗは
空気に触れない。このため、基板表面に酸化皮膜が形成
されたり、空気中の不純物が付着したりする虞れはな
い。また、基板洗浄槽１内の洗浄液を全部排出せずとも
基板Ｗの装填や取り出しができる。In addition, in the overflow type cleaning section 65, since the cleaning liquid generally overflows from the upper portion of the substrate cleaning tank 1, a plurality of types of cleaning processing can be performed without completely discharging the cleaning liquid in the substrate cleaning tank 1. The cleaning liquid can be replaced every time, and the substrate W does not come into contact with air until a series of cleaning processing is completed. Therefore, there is no fear that an oxide film is formed on the substrate surface or impurities in the air are attached. Further, the substrate W can be loaded or unloaded without discharging the cleaning liquid in the substrate cleaning tank 1 entirely.
【００２７】一方、前記スタティックミキサー１４は、
図２に示すように、ミキサー管路１４ａ内に孔あきねじ
り板１４ｂを固定し、純水ＤWと洗浄液ＱA〜ＱEとを均
一に混合するように構成される。尚、このスタティック
ミキサーに代えて他の混合器を用いても良く、管路が充
分に長ければかかる混合器を省くことも出来る。前記導
入弁連結管１６は、図１及び図２に示すように、洗浄液
供給部４の複数の洗浄液導入弁８A〜８Eを連結したもの
であり、詳細については後述する。On the other hand, the static mixer 14
As shown in FIG. 2, the perforated twisting plate 14b fixed to the mixer duct 14a, configured to uniformly mix the pure water D W and the cleaning liquid Q A to Q E. It should be noted that another mixer may be used instead of the static mixer, and such a mixer can be omitted if the pipe is sufficiently long. The introduction valve connection pipe 16, as shown in FIGS. 1 and 2 is obtained by connecting a plurality of cleaning liquid introduction valve 8 A to 8 E of the cleaning liquid supply section 4 will be described later in detail.
【００２８】上記洗浄液導入弁８A〜８Eは、図１(Ｂ)に
示すように、スタティックミキサー１４の上流側に配置
した導入弁連結管１６に固定され、この導入弁連結管１
６を介して純水給液管３に連通連結される。この洗浄液
導入弁８は、本出願人が実願平３―９３６３４号で提案
したものであり、図３に示すように、内部に洗浄液導
入室８１を区画形成した弁本体８０と、洗浄液導入室
８１内に弁軸８３を介して挿通され、図示しない開閉駆
動手段により開閉自在に設けられた弁体８４と、上記
弁連結管１６の管壁に形成され、上記弁体８４を受け止
める弁座８４ｂと、前記基板処理槽１に接続された純
水通路３ａの一部を構成し、弁本体８０に接続された上
記弁連結管１６とを具備して成り、洗浄液Ｑを洗浄液導
入室８１を介して弁連結管１６内の純水通路３ａに導入
するように構成される。As shown in FIG. 1B, the washing liquid introduction valves 8 A to 8 E are fixed to an introduction valve connecting pipe 16 arranged on the upstream side of the static mixer 14.
6 and connected to the pure water supply pipe 3. The cleaning liquid introduction valve 8 is proposed by the present applicant in Japanese Utility Model Application No. 3-93634. As shown in FIG. 3, a valve main body 80 having a cleaning liquid introduction chamber 81 formed therein is formed therein. A valve body 84 inserted through a valve shaft 83 through the valve shaft 83 and provided to be openable and closable by opening and closing drive means (not shown), and a valve seat 84b formed on the pipe wall of the valve connecting pipe 16 for receiving the valve body 84 And a part of the pure water passage 3a connected to the substrate processing tank 1 and the valve connecting pipe 16 connected to the valve body 80. The cleaning liquid Q is supplied through the cleaning liquid introduction chamber 81. It is configured to be introduced into the pure water passage 3 a in the valve connecting pipe 16.
【００２９】上記弁本体８０内には洗浄液導入室８１と
弁駆動室８２とが区画形成され、洗浄液導入室８１と弁
駆動室８２に亘り弁軸８３を貫通し、洗浄液導入室８１
の洗浄液入口８1ａに洗浄液供給管７Aが接続され、洗浄
液導入室８１内では弁軸８３の先端部に弁体８４が固定
される。上記弁駆動室８２内では弁軸８３にエアピスト
ン８５が固定され、圧縮バネ８６でエアピストン８５を
閉弁側(即ち、本実施例では図３において下方側)に付勢
するとともに、圧縮エアＡでエアピストン８５を開弁操
作し、洗浄液ＱAを所定量だけ純水通路３ａ内へ圧送する
ように構成される。尚、図３中の符号８２ａは圧縮エア
Ａの出入り口、８２ｂはエアピストン８５の作動に伴い
弁駆動室８２内のエアを逃がすためのバネ側連通口、８
７は洗浄液封止用ベローズ管である。A cleaning liquid introduction chamber 81 and a valve driving chamber 82 are formed in the valve body 80, and penetrate the valve shaft 83 between the cleaning liquid introduction chamber 81 and the valve driving chamber 82.
The washing liquid inlet 81a has cleaning liquid supply pipe 7 A is connected to the valve body 84 is fixed to the distal end portion of the valve shaft 83 in the cleaning liquid introducing chamber 81. In the valve drive chamber 82, an air piston 85 is fixed to a valve shaft 83, and the compression spring 86 urges the air piston 85 toward the valve closing side (that is, in the present embodiment, downward in FIG. 3). the air piston 85 and the valve opening operation by a, is configured to pump the cleaning liquid Q a to a predetermined amount of pure water passage 3a within. Reference numeral 82a in FIG. 3 denotes an inlet / outlet of compressed air A, 82b denotes a spring-side communication port for releasing air in the valve drive chamber 82 with the operation of the air piston 85, 8
Reference numeral 7 denotes a bellows tube for cleaning liquid sealing.
【００３０】また、上記導入弁連結管１６は、図１(Ｂ)
及び図３に示すように、その管壁に上記洗浄液導入室８
１の洗浄液出口８１ｂと弁座８４ｂが形成され、弁体８
４を弁座８４ｂで受け止め、弁体８４の先端凸部８４ａ
を洗浄液出口８１ｂ内に延出して、弁座８４ｂから純水
通路３ａまでの間の空間を先端凸部８４ａで埋めるよう
に構成される。このため、実質的に閉弁時に弁座周辺に
死水域の発生がなく、洗浄液供給後に洗浄液が停留する
などの問題を解消できる。Further, the introduction valve connecting pipe 16 is shown in FIG.
As shown in FIG. 3, the washing liquid introduction chamber 8 is provided on the pipe wall.
1 is formed with a cleaning liquid outlet 81b and a valve seat 84b.
4 is received by the valve seat 84b,
Is extended into the cleaning liquid outlet 81b, and the space between the valve seat 84b and the pure water passage 3a is filled with the tip convex portion 84a. Therefore, substantially no dead water area is generated around the valve seat when the valve is closed, and problems such as stopping of the cleaning liquid after supplying the cleaning liquid can be solved.
【００３１】さらに、上記導入弁連結管１６と導入弁８
の連結機構では、洗浄液導入室８１の洗浄液出口８１ｂ
と弁座８４ｂとを導入弁連結管１６の管壁に形成し、そ
の弁座８４ａを弁連結管１６内の純水通路３ａに近接配
置したので（又は、純水通路内に臨ませても良い）、洗
浄液供給後に引き続き純水を供給する際に、純水の純度
の低下の問題が無くなり、基板の表面処理の品質が向上
する。しかも、洗浄液ＱAの液切れが良くなるので、後
述するように、圧送ポンプ１５による各洗浄液の吐出圧
力の制御と併せて、純水ＤWの供給量に対する洗浄液ＱA
の供給量を精確に制御して所定の洗浄液濃度に調合する
ことができる。しかも、純水が停留してバクテリヤが発
生することもなくなる。但し、洗浄液導入弁８A〜８Eは
圧縮エアで作動するものに限らず、適宜電磁開閉弁等で
代替することもできる。Further, the introduction valve connecting pipe 16 and the introduction valve 8
Of the cleaning liquid introduction chamber 81, the cleaning liquid outlet 81b
And the valve seat 84b are formed on the pipe wall of the introduction valve connecting pipe 16, and the valve seat 84a is disposed close to the pure water passage 3a in the valve connecting pipe 16 (or even if the valve seat 84a faces the pure water passage). Good), when the pure water is supplied after the supply of the cleaning liquid, the problem of a decrease in the purity of the pure water is eliminated, and the quality of the surface treatment of the substrate is improved. Moreover, since the liquid out of the cleaning liquid Q A is improved, as described later, in conjunction with control of the discharge pressure of the cleaning fluid by pumping the pump 15, the cleaning liquid Q A to the feed amount of the pure water D W
Can be adjusted to a predetermined concentration of the cleaning solution by precisely controlling the supply amount of the cleaning solution. In addition, there is no possibility that pure water stays and bacteria are generated. However, the cleaning liquid introduction valve 8 A to 8 E is not limited to operating with compressed air, it may be replaced by a suitable solenoid valve or the like.
【００３２】一方、前記オーバーフロー型洗浄処理部６
５の洗浄液供給部４における各洗浄液の圧送手段２５
は、図１(Ａ)に示すように、各洗浄液貯留容器６(具体
的には６A)から導出した洗浄液導入管１０Aに設けた１
個の圧送ポンプ１５と、圧送ポンプ１５を駆動するモー
タ１９と、圧送ポンプ１５の吐出側に設けた圧力検出器
２６(具体的には、圧力計)と、圧力検出器２６からの検
出信号に基づいて圧送ポンプ１５の回転数を増減制御す
る制御手段１２とから構成される。当該圧送手段２５で
は、設定圧に対する過不足を圧力検出器２６で検出し、
当該制御手段１２が圧送ポンプ１５の駆動モータ１９を
駆動制御して、複数の各基板洗浄槽１に所定の設定圧力
で洗浄液が圧送される。On the other hand, the overflow type cleaning section 6
5 means 25 for feeding the cleaning liquid in the cleaning liquid supply unit 4
As shown in FIG. 1 (A), provided in the cleaning liquid introduction pipe 10 A derived from the cleaning liquid storage container 6 (specifically, 6 A) 1
Pumping pump 15, a motor 19 for driving the pumping pump 15, a pressure detector 26 (specifically, a pressure gauge) provided on the discharge side of the pumping pump 15, and a detection signal from the pressure detector 26. And control means 12 for controlling the rotation speed of the pressure feed pump 15 based on the control signal. In the pressure feeding means 25, an excess or deficiency with respect to the set pressure is detected by a pressure detector 26,
The control means 12 controls the drive of the drive motor 19 of the pressure feed pump 15, and the cleaning liquid is pumped to the plurality of substrate cleaning tanks 1 at a predetermined set pressure.
【００３３】尚、図１(Ａ)で示した実施例では、洗浄液
導入弁８Aより導入される一種類の洗浄液ＱAに係る洗浄
液圧送手段２５について説明したが、他の種類の洗浄液
ＱB、ＱC、ＱD、ＱEに係る洗浄液圧送手段についても同
様に構成される。[0033] In the embodiment shown in FIG. 1 (A), the has been described cleaning liquid pressurized means 25 according to one type of the cleaning liquid Q A is introduced from the cleaning liquid introduction valve 8 A, other types of cleaning liquid Q B , Q C , Q D , and Q E are similarly configured.
【００３４】図４は上述した制御手段１２や圧送ポンプ
１５等を使用した圧送手段２５に替えてＮ2ガスの圧力
を利用した洗浄液の圧送手段２５を示し、図４(Ａ)は、
Ｎ2ガスを１段で調圧弁２８を介して貯留容器６に圧入
し、洗浄液を洗浄液供給管７に送給するものである。符
号２９ａは圧力逃がし弁で、洗浄液の送給を停止する場
合に使用する。符号２９ｂは防爆弁で貯留容器６の内圧
が異常上昇した場合に緊急に作動する。図４(Ｂ)は、調
圧弁２８のパイロット逃がし用にもＮ2ガスを使用し
て、２段でＮ2ガスを貯留容器６に圧入するように構成
したものである。図４(Ｃ)は、貯留容器６内の洗浄液の
圧送用と調圧弁２８のパイロット逃がし用に別系統のＮ
2ガスを使用したものである。図４(Ａ)乃至(Ｃ)に図示
した圧送手段２５によっても、所定の設定圧力で洗浄液
を圧送することができる。FIG. 4 shows a cleaning liquid pumping means 25 using the pressure of N 2 gas instead of the above-mentioned controlling means 12 and the pumping means 25 using the pumping pump 15, and FIG.
The N 2 gas is press-fitted into the storage container 6 via the pressure regulating valve 28 in one stage, and the cleaning liquid is supplied to the cleaning liquid supply pipe 7. Reference numeral 29a denotes a pressure relief valve which is used to stop the supply of the cleaning liquid. Reference numeral 29b denotes an explosion-proof valve which is activated when the internal pressure of the storage container 6 rises abnormally. FIG. 4B shows a configuration in which N 2 gas is also used for releasing the pilot of the pressure regulating valve 28 and N 2 gas is press-fitted into the storage container 6 in two stages. FIG. 4 (C) shows a separate N system for feeding the cleaning liquid in the storage container 6 and for releasing the pilot of the pressure regulating valve 28.
It uses two gases. The cleaning solution can also be pressure-fed at a predetermined set pressure by the pressure feeding means 25 shown in FIGS. 4 (A) to 4 (C).
【００３５】一方、図５〜図７は本発明の実施例２を示
し、上記実施例１が基板洗浄槽１でオーバーフローした
洗浄液を排液ドレン４３に廃棄するように構成したのに
対して、本実施例２は貯留容器６に循環して再利用可能
にした点を特徴とする。図５に示すように、３種類の洗
浄液ＱA・ＱB・ＱCの各貯留容器６から洗浄液導入管１０
を夫々導出し、各導入管１０から分岐した３本の洗浄液
供給管７を導入弁８を介して基板洗浄槽１に連結する。
図６(Ａ)はこの洗浄液の供給側において、各洗浄液を供
・断する導入弁８A・８B・８C及び純水開閉弁２７が集合し
た弁連結管１６を示し、弁連結管１６の一端１６ａには
純水供給管３が接続し、その他端１６ｂには洗浄液供給
管７が延出される。尚、上記貯留容器６には、洗浄液Ｑ
A・ＱB・ＱCが夫々自動的に補充可能になっている。On the other hand, FIGS. 5 to 7 show a second embodiment of the present invention. In contrast to the first embodiment in which the cleaning liquid overflowed in the substrate cleaning tank 1 is disposed in the drainage drain 43, The second embodiment is characterized in that it is circulated to the storage container 6 and can be reused. As shown in FIG. 5, the cleaning liquid introduction pipe 10 from the three types of the cleaning liquid Q A · Q each reservoir 6 of B · Q C
Respectively, and three cleaning liquid supply pipes 7 branched from the respective introduction pipes 10 are connected to the substrate cleaning tank 1 via the introduction valves 8.
FIG. 6A shows a valve connecting pipe 16 on the supply side of the cleaning liquid, in which introduction valves 8 A , 8 B , 8 C for supplying and shutting off each cleaning liquid and a pure water opening / closing valve 27 are assembled. The pure water supply pipe 3 is connected to one end 16a, and the cleaning liquid supply pipe 7 extends to the other end 16b. The cleaning liquid Q is stored in the storage container 6.
A · Q B · Q C is in each can be automatically replenished.
【００３６】各基板洗浄槽１の洗浄液排出部４０の下流
側を夫々４本に分岐し、これらの分岐管を上記３種類の
洗浄液ＱA・ＱB・ＱCの貯留容器６と排液ドレン４３に対
して夫々接続し、オーバーフローした各種の洗浄液を貯
留容器６に回収するとともに、必要に応じて排液ドレン
４３に廃棄できるように構成する。図６(Ｂ)はこの洗浄
液の排出側において、各洗浄液を供・断する洗浄液回収
弁４４A・４４B・４４C及び排液弁４７の集合した排液管
４２の要部を示し、排液管４２の下流側の最奥部４２ａ
には純水用の上記排液弁４７が設けられる。The branches downstream respectively four of the cleaning liquid discharge section 40 of the substrate cleaning tank 1, drainage drain these branch pipes and the storage container 6 of the three types of detergent Q A · Q B · Q C Each of the drains 43 is connected to the drain 43 so that various overflowing cleaning liquids can be collected in the storage container 6 and, if necessary, discharged to the drainage drain 43. FIG. 6B shows, on the discharge side of the cleaning liquid, essential parts of a drain pipe 42 in which cleaning liquid collection valves 44 A , 44 B , 44 C for supplying and shutting off each cleaning liquid and a drain valve 47 are collected. The innermost part 42a on the downstream side of the liquid pipe 42
Is provided with the drain valve 47 for pure water.
【００３７】純水によるリンス処理では、基板洗浄槽１
からオーバーフローしたリンス液を排液弁４７を介して
排液ドレン４３に廃棄する。その際、リンス液は排液管
４２の最奥部４２ａから排出されるので、排液管４２の
内壁に残留する洗浄液は有効に洗い流される。また、基
板洗浄槽１の底部の排出口４５及び給排液切換弁１３は
クイックドレン可能に構成され、急速排出によりスルー
プットを高めている。In the rinsing treatment with pure water, the substrate cleaning tank 1
The rinsing liquid overflowing from is drained to the drainage drain 43 via the drainage valve 47. At this time, since the rinse liquid is discharged from the innermost part 42a of the drain pipe 42, the cleaning liquid remaining on the inner wall of the drain pipe 42 is effectively washed away. In addition, the discharge port 45 at the bottom of the substrate cleaning tank 1 and the supply / discharge liquid switching valve 13 are configured to be capable of quick drain, and the throughput is increased by rapid discharge.
【００３８】図７は基板処理のフローチャートである。
図７(Ａ)は基板に一般的処理を施す場合の流れを示す。
この場合においては、まず洗浄液ＱAを基板洗浄槽１に
循環させてオーバーフローさせ、基板Ｗを処理した後、
洗浄液ＱAを洗浄液排出部４０を介して貯留容器６に回
収する。そして、空になった基板洗浄槽１に純水を供給
し、オーバーフローさせながら基板Ｗをリンスした後、
純水を排出する。次に、洗浄液ＱB、ＱCについても、洗
浄液ＱAの場合と同様に、順次循環させて基板Ｗを処理
した後、基板Ｗを引き上げる。図７(Ｂ)は、ＨＦ処理が
含まれる場合の流れを示す。この場合においては、ＨＦ
処理した後に基板Ｗを空気に接触させると、ＨＦ、Ｏ2
とＳiとが反応し、基板Ｗの表面に不純化合物が生じて
パーティクルとなる。このため、ＨＦを基板洗浄槽１に
供給して循環した後、ＨＦの供給を停止し、続いて、基
板洗浄槽１にＨＦを入れた状態で純水を供給し、オーバ
ーフローさせることによりＨＦを純水に置き換えてい
く。これにより、基板Ｗは常に液中にとどまり、純水リ
ンスの連続供給で、ＨＦ成分はパーティクルを発生する
ことなく除去される。FIG. 7 is a flowchart of the substrate processing.
FIG. 7A shows a flow when a general process is performed on a substrate.
In this case, overflow is first circulating a cleaning liquid Q A substrate cleaning bath 1, after processing the the substrate W,
The cleaning liquid Q A recovered in a storage container 6 via the cleaning liquid recovery section 40. Then, pure water is supplied to the empty substrate cleaning tank 1, and the substrate W is rinsed while overflowing.
Discharge pure water. Then, the cleaning liquid Q B, the even Q C, as in the case of the cleaning liquid Q A, after processing the substrate W by sequentially circulating raise the substrate W. FIG. 7B shows a flow when the HF processing is included. In this case, HF
When the substrate W is brought into contact with air after the processing, HF, O 2
And Si react with each other to generate an impurity compound on the surface of the substrate W to form particles. For this reason, after supplying and circulating HF to the substrate cleaning tank 1, the supply of HF is stopped. Then, pure water is supplied in a state in which HF is supplied to the substrate cleaning tank 1, and HF is overflowed. Replace with pure water. Thereby, the substrate W always stays in the liquid, and the HF component is removed without generating particles by continuous supply of pure water rinse.
【００３９】図７の洗浄処理において、ＨＦ液以外の洗
浄液を回収する場合、基板Ｗが空気に触れてもよいとき
には、基板洗浄槽１の底部から洗浄液を抜いてから純水
を供給するが、弊害がある場合には、やはり、洗浄液を
純水で交換しながら基板Ｗが空気に触れないようにす
る。尚、上記純水による最終リンス処理では、純水の比
抵抗値を検出したり、一定時間の経過により、リンス処
理が完了するように構成される。また、最終リンスが完
了した後に洗浄槽１から基板Ｗを引き上げる場合には、
浮遊したパーティクルが基板Ｗに付着するのを防止する
ため、純水をオーバーフローさせながら行う。In the cleaning process shown in FIG. 7, when collecting a cleaning liquid other than the HF liquid, if the substrate W may come into contact with air, the cleaning liquid is drained from the bottom of the substrate cleaning tank 1 and then pure water is supplied. If there is a problem, the substrate W is kept from contacting the air while replacing the cleaning liquid with pure water. In the final rinsing process using the pure water, the rinsing process is completed after detecting a specific resistance value of the pure water or after a certain period of time. When the substrate W is pulled up from the cleaning tank 1 after the final rinsing is completed,
In order to prevent floating particles from adhering to the substrate W, the cleaning is performed while overflowing pure water.
【００４０】上記基板処理において、例えば、ＳＣ1処
理を行う場合には、所定濃度に調製したＮＨ4ＯＨとＨ2
Ｏ2の混合液を使用し、ＨＦ処理では所定濃度に調製し
たＨＦを使用し、ＳＣ2処理では所定濃度に調製したＨ
ＣｌとＨ2Ｏ2の混合液を使用する。上記基板処理の類型
としては、例えば下記の(1)〜(4)を初め、種々の類型が
可能である。 (1)ＳＣ1処理→ＨＦ処理→ＳＣ2処理 (2)ＨＦ処理→ＳＣ1処理→ＳＣ2処理 (3)ＳＣ1処理→ＳＣ2処理 (4)その他、ＨＦ処理のみ、又はＳＣ1処理のみ。[0040] In the substrate processing, for example, when performing SC 1 treatment, NH 4 OH and H 2 which was prepared to a predetermined concentration
A mixed solution of O 2 is used, HF adjusted to a predetermined concentration is used in the HF treatment, and H 2 adjusted to a predetermined concentration is used in the SC 2 treatment.
A mixture of Cl and H 2 O 2 is used. As the types of the substrate processing, various types are possible, for example, the following (1) to (4). (1) SC 1 processing → HF processing → SC 2 processing (2) HF processing → SC 1 processing → SC 2 processing (3) SC 1 processing → SC 2 processing (4) Others, HF processing only, or SC 1 processing only .
【００４１】[0041]
【発明の効果】(1)１個の基板処理槽で基板を処理する
冒述の従来技術とは異なり、並設した複数個の基板処理
槽で多数の基板表面を並行処理できるので、スループッ
トが向上する。 (2)各基板処理槽に各処理液貯留容器から分岐導出した
処理液導入管を処理液導入弁を介して接続するので、複
数個の基板処理槽に対して複数種の処理液貯留容器を１
セットだけ設ければ良い。このため、複数個の基板処理
槽毎に貯留容器を複数セット設ける必要はなく、処理液
供給部の余分な重複配置を回避して装置全体を省スペー
ス化できる。(1) Unlike the prior art in which substrates are processed in one substrate processing tank, a large number of substrate surfaces can be processed in parallel in a plurality of substrate processing tanks arranged in parallel. improves. (2) Since a processing liquid introduction pipe branched from each processing liquid storage container is connected to each substrate processing tank via a processing liquid introduction valve, a plurality of types of processing liquid storage containers are provided for a plurality of substrate processing tanks. 1
You only need to provide a set. For this reason, it is not necessary to provide a plurality of storage containers for each of the plurality of substrate processing tanks, and it is possible to avoid an unnecessary overlapping arrangement of the processing liquid supply units and to save the space of the entire apparatus.
【図１】実施例１を示す浸漬型基板洗浄装置の洗浄処理
部の概略系統図である。FIG. 1 is a schematic system diagram of a cleaning processing unit of an immersion type substrate cleaning apparatus according to a first embodiment.
【図２】導入弁連結管周辺の一部切欠概略背面図であ
る。FIG. 2 is a partially cut-away schematic rear view around the introduction valve connecting pipe.
【図３】図２の薬液導入弁のＩ−Ｉ線縦断面図である。FIG. 3 is a vertical sectional view taken along the line II of the chemical liquid introducing valve of FIG. 2;
【図４】Ｎ2ガスによる処理液圧送形態を示す貯留容器
周辺の要部系統図である。FIG. 4 is a system diagram of a main portion around a storage container showing a form of processing liquid pressure feeding by N 2 gas.
【図５】実施例２を示す図１の相当図である。FIG. 5 is a view corresponding to FIG. 1 showing a second embodiment.
【図６】同実施例２を示す洗浄処理部の要部縦断面図で
あり、図６(Ａ)は図５のＡ部を、図６(Ｂ)は図５のＢ部
を夫々示す液通路の要部縦断面図である。6 is a vertical sectional view of a main part of a cleaning processing unit according to the second embodiment. FIG. 6 (A) is a liquid showing an A part of FIG. 5, and FIG. 6 (B) is a liquid showing a B part of FIG. It is a principal part longitudinal cross-sectional view of a passage.
【図７】同実施例２の基板処理のフローチャートであ
る。FIG. 7 is a flowchart of substrate processing according to the second embodiment.
【図８】浸漬型基板洗浄装置の概略斜視図である。FIG. 8 is a schematic perspective view of an immersion type substrate cleaning apparatus.
【図９】同洗浄装置の概略平面図である。FIG. 9 is a schematic plan view of the cleaning device.
【図１０】同洗浄装置の概略縦断面図である。FIG. 10 is a schematic longitudinal sectional view of the cleaning device.
【図１１】従来技術を示す浸漬型基板処理装置の基板処
理部の概略説明図である。FIG. 11 is a schematic explanatory view of a substrate processing unit of a immersion type substrate processing apparatus showing a conventional technique.
１…基板処理槽、３…純水供給管、４…処理液供給部、
６…処理液貯留容器、７…処理液供給管、８…処理液導
入弁、１０…処理液導入管、１６…導入弁連結管、２５
…処理液圧送手段、４０…処理液排出部、ＤW…純水、
ＱA〜ＱE…処理液、Ｗ…基板、Ｃ…カセット。DESCRIPTION OF SYMBOLS 1 ... Substrate processing tank, 3 ... Pure water supply pipe, 4 ... Processing liquid supply part,
6 ... processing liquid storage container, 7 ... processing liquid supply pipe, 8 ... processing liquid introduction valve, 10 ... processing liquid introduction pipe, 16 ... introduction valve connecting pipe, 25
... processing liquid pressure feeding means, 40 ... processing liquid discharge part, DW ... pure water,
Q A ~Q E ... processing solution, W ... substrate, C ... cassette.
Claims (1)
理をなすオーバーフロー型の基板処理槽と、基板処理槽
に複数種の処理液を供給する処理液供給部と、基板処理
槽よりオーバーフローした処理液を排出する処理液排出
部とを具備して成り、 上記処理液供給部は、基板処理槽に連結した処理液供給
管と、処理液供給管にそれぞれ処理液導入弁を介して連
通した複数個の処理液貯留容器とを備え、各処理液導入
弁を選択的に開閉制御して所定の処理液を処理液供給管
へ導入するように構成した基板処理装置において、 上記基板処理槽を複数個並設し、各基板処理槽の処理液
供給管に処理液導入弁を接続し、上記処理液貯留容器か
ら導出した処理液導入管を分岐し、各分岐した処理液導
入管をそれぞれ前記処理液導入弁を介して各基板処理槽
の処理液供給管に接続し、各基板処理槽へ複数種の処理
液を供給するように構成したことを特徴とする基板処理
装置。1. An overflow type substrate processing tank for immersing a substrate in a processing liquid to perform surface treatment of the substrate, and a substrate processing tank.
Made by including a treatment liquid supply unit for supplying a plurality of kinds of processing liquid and a processing liquid discharging portion for discharging the processing liquid overflowing from the substrate processing tank, the processing solution supply unit was connected to the substrate processing chamber A processing liquid supply pipe, and a plurality of processing liquid storage containers respectively connected to the processing liquid supply pipes via processing liquid introduction valves, and each processing liquid introduction valve is selectively opened and closed to supply a predetermined processing liquid. In the substrate processing apparatus configured to be introduced into the processing liquid supply pipe, a plurality of the substrate processing tanks are arranged in parallel , a processing liquid introduction valve is connected to the processing liquid supply pipe of each substrate processing tank , and the processing liquid storage container is provided. The processing liquid introduction pipes derived from the above are branched, and each branched processing liquid introduction pipe is connected to each substrate processing tank via the processing liquid introduction valve.
A plurality of types of processing liquids are supplied to each of the substrate processing tanks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21512893A JP2739419B2 (en) | 1992-09-25 | 1993-08-06 | Substrate processing equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4-280946 | 1992-09-25 | ||
| JP28094692 | 1992-09-25 | ||
| JP21512893A JP2739419B2 (en) | 1992-09-25 | 1993-08-06 | Substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06204201A JPH06204201A (en) | 1994-07-22 |
| JP2739419B2 true JP2739419B2 (en) | 1998-04-15 |
Family
ID=26520690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21512893A Expired - Lifetime JP2739419B2 (en) | 1992-09-25 | 1993-08-06 | Substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2739419B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6902677B2 (en) | 2002-09-24 | 2005-06-07 | Dainippon Screen Mfg. Co., Ltd. | Method of removing metal ion and apparatus for treating substrate |
| WO2014141580A1 (en) * | 2013-03-12 | 2014-09-18 | 信越半導体株式会社 | Method for treating washing tank |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5730162A (en) * | 1995-01-12 | 1998-03-24 | Tokyo Electron Limited | Apparatus and method for washing substrates |
| JP3320640B2 (en) * | 1997-07-23 | 2002-09-03 | 東京エレクトロン株式会社 | Cleaning equipment |
| JPH1154471A (en) | 1997-08-05 | 1999-02-26 | Tokyo Electron Ltd | Treatment device and treatment method |
| DE69835988T2 (en) * | 1997-08-18 | 2007-06-21 | Tokyo Electron Ltd. | Double side cleaning machine for a substrate |
| EP1153417A1 (en) * | 1999-02-18 | 2001-11-14 | STEAG MicroTech GmbH | Method and device for treating substrates |
| JP4295032B2 (en) * | 2003-07-22 | 2009-07-15 | 大日本スクリーン製造株式会社 | Plating equipment |
| EP1736568A4 (en) | 2004-04-15 | 2011-01-12 | Tokyo Electron Ltd | Liquid treatment device and liquid treatment method |
| JP2006322783A (en) * | 2005-05-18 | 2006-11-30 | Dainippon Screen Mfg Co Ltd | Pressure sensor and substrate processing apparatus |
| JP5341427B2 (en) * | 2008-08-20 | 2013-11-13 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, substrate processing program, and computer-readable recording medium recording the substrate processing program |
| JP5474666B2 (en) | 2009-07-31 | 2014-04-16 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, program, and program recording medium |
| KR101705375B1 (en) | 2010-02-24 | 2017-02-09 | 도쿄엘렉트론가부시키가이샤 | Liquid processing apparatus, liquid processing method and storage medium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0683158B2 (en) * | 1987-11-27 | 1994-10-19 | 日本電気株式会社 | CATV repeater |
| JP2926757B2 (en) * | 1989-06-23 | 1999-07-28 | 日本電気株式会社 | Overflow circulation system |
| JPH03159123A (en) * | 1989-11-16 | 1991-07-09 | Mitsubishi Materials Corp | Method for cleaning semiconductor wafer |
-
1993
- 1993-08-06 JP JP21512893A patent/JP2739419B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6902677B2 (en) | 2002-09-24 | 2005-06-07 | Dainippon Screen Mfg. Co., Ltd. | Method of removing metal ion and apparatus for treating substrate |
| WO2014141580A1 (en) * | 2013-03-12 | 2014-09-18 | 信越半導体株式会社 | Method for treating washing tank |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06204201A (en) | 1994-07-22 |
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