JP2734007B2 - Polishing apparatus and polishing method - Google Patents
Polishing apparatus and polishing methodInfo
- Publication number
- JP2734007B2 JP2734007B2 JP63251894A JP25189488A JP2734007B2 JP 2734007 B2 JP2734007 B2 JP 2734007B2 JP 63251894 A JP63251894 A JP 63251894A JP 25189488 A JP25189488 A JP 25189488A JP 2734007 B2 JP2734007 B2 JP 2734007B2
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- JP
- Japan
- Prior art keywords
- polishing
- polished
- rotary
- polishing apparatus
- rotating
- Prior art date
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、被研磨材料の研磨面の平坦性に優れた平面
研磨装置および研磨方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a planar polishing apparatus and a polishing method which are excellent in flatness of a polished surface of a material to be polished.
本発明は、シリコンウェハ等の平面研磨装置および研
磨方法に関する。この平面研磨装置によれば、回転研磨
テーブルに形成された凹部の底面と回転定盤との間に供
給されて回転定盤を浸透した研磨液を、回転定盤の被研
磨材料の被研磨面との当接面である研磨面にむらなく均
一に浸出させることができ、被研磨材料の被研磨面と回
転定盤の研磨面との間にむらなく均一に供給することが
可能となる。また、本発明の研磨方法によれば、研磨レ
ートを被研磨面全面にわたって均一にすることができ、
被研磨材料の被研磨面を高精度の平坦度に研磨すること
が可能となる。The present invention relates to a planar polishing apparatus and a polishing method for a silicon wafer or the like. According to this planar polishing apparatus, the polishing liquid supplied between the bottom surface of the concave portion formed on the rotary polishing table and the rotary surface plate and permeating the rotary surface plate is polished to the surface to be polished of the material to be polished on the rotary surface plate. Can be uniformly leached on the polished surface, which is the contact surface between the polished material and the polished surface of the material to be polished and the polished surface of the rotary platen. According to the polishing method of the present invention, the polishing rate can be uniform over the entire surface to be polished,
The surface to be polished of the material to be polished can be polished with high precision flatness.
従来の半導体ウェハ等の研磨装置は、第３図に示すよ
うに構成されている。これを同図に基づき概略説明す
る。A conventional polishing apparatus for a semiconductor wafer or the like is configured as shown in FIG. This will be schematically described with reference to FIG.
半導体ウェハ等の被研磨材料12は、貼付ワックス13等
により回転軸を有する被研磨材料貼付ブロック11に固定
される。一方、研磨布21を上面に接着し、動力回転軸22
を有する回転台23の回転軸上部に研磨液供給ノズル24が
配設してある。A material to be polished 12 such as a semiconductor wafer is fixed to a material to be polished block 11 having a rotation axis by a wax 13 or the like. On the other hand, the polishing cloth 21 is adhered to the upper surface,
A polishing liquid supply nozzle 24 is provided above a rotation shaft of a turntable 23 having the same.
従来の研磨方法においては、前記研磨装置において、
研磨液供給ノズル24より研磨剤を含有する研磨液を回転
する研磨布21上に供給し、研磨液は遠心力により研磨布
21上を回転台23の外周に向かって流動する。この状態で
被研磨材料貼付ブロック11に固定した被研磨材料12を研
磨布21に圧着し、被研磨材料12の被研磨面全面における
研磨レートの均一性を保持するため互いに回転しながら
研磨を行っていた。（例えば「半導体結晶材料総合ハン
ドブック」（株）ブジ・テクノシステム刊、昭和61
年）。In the conventional polishing method, in the polishing apparatus,
A polishing liquid containing an abrasive is supplied onto the rotating polishing cloth 21 from a polishing liquid supply nozzle 24, and the polishing liquid is centrifugally applied to the polishing cloth.
The fluid flows toward the outer periphery of the turntable 23 on the top 21. In this state, the material to be polished 12 fixed to the material to be polished affixing block 11 is pressed against the polishing cloth 21 and polished while rotating with respect to each other in order to maintain the uniformity of the polishing rate over the entire polished surface of the material to be polished 12. I was (For example, "Semiconductor Crystal Materials Comprehensive Handbook" published by Buji Techno System, Showa 61
Year).
しかしながら、前述した従来の研磨装置および研磨方
法によると、半導体ウェハ等の被研磨材料12は、充分な
平坦性を得ることができなかった。第２図は、被研磨材
料12の被研磨面の平坦性をあらわず図で、曲線Ｂが示す
ように、ウェハの中心から位置が大きくなるほど平坦性
にとぼしくなり均一な研磨は行われない。すなわち、被
研磨材料12の直径上外周部に向かうほど研磨レートが大
きく、凸レンズ状の形状となり、充分な平坦性を得るこ
とができなかった。このことは、ウェハの直径が大きく
なるにつれて顕著になってきた。However, according to the conventional polishing apparatus and polishing method described above, the material to be polished 12 such as a semiconductor wafer could not obtain sufficient flatness. FIG. 2 does not show the flatness of the surface to be polished of the material to be polished 12, and as shown by the curve B, the larger the position from the center of the wafer, the lower the flatness, and uniform polishing is not performed. In other words, the polishing rate was higher toward the outer peripheral portion in the diameter of the material to be polished 12 and the shape became a convex lens shape, and sufficient flatness could not be obtained. This has become noticeable as the diameter of the wafer has increased.
被研磨材料12の外周部の研磨レートが大きい原因の一
つとして、研磨液が研磨液供給ノズル24からのみ供給さ
れ、次に研磨布21の表面をつたわって外周部へ流動する
装置構造があげられる。このため被研磨材料12の被研磨
面への研磨液の供給は、被研磨面の内周部よりも外周部
により多くなされ、被研磨面に対する均一な研磨液の供
給がなされなかった。従って、被研磨面の内周部より外
周部の方が研磨レートが大きくなり、被研磨面の形状は
凸レンズ状の研磨形状となるのである。この結果、半導
体ウェハ等の被研磨材料12の被研磨面に例えばLSIの回
路をパターニングする際に、ステッパ精度を充分に発揮
させることが困難であった。One of the causes of the high polishing rate at the outer peripheral portion of the material to be polished 12 is an apparatus structure in which the polishing liquid is supplied only from the polishing liquid supply nozzle 24, and then flows to the outer peripheral portion by joining the surface of the polishing cloth 21. Can be For this reason, the supply of the polishing liquid to the surface to be polished of the material to be polished 12 is performed more in the outer peripheral part than in the inner peripheral part of the surface to be polished, and the uniform supply of the polishing liquid to the polished surface is not performed. Therefore, the outer peripheral portion has a higher polishing rate than the inner peripheral portion of the surface to be polished, and the shape of the surface to be polished has a convex lens-like shape. As a result, when patterning, for example, an LSI circuit on the surface to be polished of the material to be polished 12 such as a semiconductor wafer, it has been difficult to sufficiently exhibit stepper accuracy.
従って本発明の課題は、被研磨材料の被研磨面にむら
なく均一に研磨液を供給するとともに、研磨レートが被
研磨材料の被研磨面全面にわたって均一となる研磨装置
および研磨方法を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a polishing apparatus and a polishing method that uniformly supply a polishing liquid to a surface to be polished of a material to be polished and a polishing rate is uniform over the entire surface to be polished of the material to be polished. It is in.
上記課題を解決するために、本発明の研磨装置では、
回転研磨テーブル上に研磨液を供給し、被研磨材料を圧
着して平面研磨をおこなう研磨装置において、回転研磨
テーブルが、被研磨材料の被研磨面との対向面に形成さ
れた凹部と、この凹部の底面から均一な面密度で分散し
て突設された複数の島状台座と、凹部の側壁にその外周
側面が密着嵌合するとともに、島状台座の上面と当接す
る多孔質材料で構成された回転定盤とを有し、凹部の底
面と回転定盤との間に供給される研磨液が、多孔質材料
で構成された回転定盤を浸透して被研磨材料の被研磨面
と当接する研磨面に浸出し供給されることを特徴とす
る。また、本発明の研磨方法では、上記した研磨装置を
用い、研磨液を被研磨材料の被研磨面に均一に供給しつ
つ研磨することを特徴とする。In order to solve the above problems, in the polishing apparatus of the present invention,
In a polishing apparatus for supplying a polishing liquid onto a rotary polishing table and pressing a material to be polished to perform planar polishing, the rotary polishing table has a concave portion formed on a surface facing a surface to be polished of the material to be polished, Consisting of a plurality of island-shaped pedestals projecting from the bottom surface of the recess at a uniform surface density, and a porous material that fits tightly on the side wall of the recess on the side wall of the recess and abuts the top surface of the island-shaped pedestal Having a rotating surface plate, the polishing liquid supplied between the bottom surface of the concave portion and the rotation surface plate, the polishing surface of the material to be polished by penetrating the rotation surface plate made of a porous material It is characterized in that it is leached and supplied to the polishing surface in contact. The polishing method of the present invention is characterized in that the polishing is performed while uniformly supplying the polishing liquid to the surface to be polished of the material to be polished using the above-mentioned polishing apparatus.
上記した手段によれば、被研磨材料の被研磨面と回転
定盤の研磨面との間に研磨液がむらなく均一に供給さ
れ、研磨レートを被研磨面全面にわたって均一にするこ
とができ、被研磨材料の被研磨面を高精度の平坦度に研
磨することのできる研磨装置および研磨方法を提供する
ことができる。According to the above-described means, the polishing liquid is uniformly supplied evenly between the polished surface of the polished material and the polished surface of the rotary platen, and the polishing rate can be made uniform over the entire polished surface. A polishing apparatus and a polishing method capable of polishing a surface to be polished of a material to be polished to a high degree of flatness can be provided.
以下、本発明の一実施例について図面を参照しながら
説明する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図は、本発明の研磨装置を示す概略断面図であ
る。回転研磨テーブル１を構成する回転台３の被研磨材
料12の被研磨面との対向面には凹部４が形成されてお
り、この凹部４には、その底面から均一な面密度で分散
して突設された複数の島状台座７が形成されている。そ
して、被研磨材料12の被研磨面と当接する研磨面を有
し、例えば直径100〜200μｍの連続気孔をむらなく均質
に有する多孔質硬化型発泡ポリウレタン樹脂で構成さ
れ、高精度の平坦面を有する多孔質材料で構成された回
転定盤２は、凹部４の側壁５にその外周側面を研磨液が
漏れないように密着嵌合されるとともに、島状台座７の
上面と当接している。ノックピン６は回転定盤２と回転
台３とを確実に一体的に回転させるためのものである。
回転定盤２は、研磨時の加圧による歪の発生のないよう
に、凹部４の底面から均一な面密度で分散して突設され
た複数の島状台座７により高平坦度を保って支持され
る。さらに回転支持台座３の動力回転軸８の中心には、
研磨液供給路９が貫通しており、この研磨液供給路９
は、第１図には記してないが、回転シールジョイントを
介して流量調節バルブおよび研磨液圧送ポンプにこの順
で連結する。回転定盤２上部には、第３図に示す従来例
と同じく、回転軸と研磨圧力調節機構とを有する被研磨
材料貼付ブロック11を配置する。FIG. 1 is a schematic sectional view showing a polishing apparatus of the present invention. A concave portion 4 is formed on a surface of the turntable 3 constituting the rotary polishing table 1 facing the surface to be polished of the material 12 to be polished, and the concave portion 4 is dispersed from the bottom surface at a uniform surface density. A plurality of projecting island-shaped pedestals 7 are formed. And has a polished surface in contact with the surface to be polished of the material to be polished 12, for example, is made of a porous cured polyurethane foam resin having a uniform uniform pores of 100-200μm in diameter, and a high-precision flat surface The rotating platen 2 made of a porous material having the above-mentioned structure is tightly fitted to the side wall 5 of the concave portion 4 so that the polishing liquid does not leak from the outer peripheral side surface thereof, and is in contact with the upper surface of the island-shaped pedestal 7. The knock pin 6 is for surely rotating the turntable 2 and the turntable 3 integrally.
The rotating platen 2 maintains a high flatness by a plurality of island-shaped pedestals 7 protruding from the bottom surface of the concave portion 4 at a uniform surface density so as not to generate distortion due to pressure during polishing. Supported. Further, at the center of the power rotary shaft 8 of the rotary support base 3,
The polishing liquid supply passage 9 penetrates the polishing liquid supply passage 9.
Although not shown in FIG. 1, is connected to a flow control valve and a polishing liquid pump in this order via a rotary seal joint. As shown in FIG. 3, a block 11 for attaching a material to be polished having a rotating shaft and a polishing pressure adjusting mechanism is arranged on the upper part of the rotary platen 2 as in the conventional example shown in FIG.
次に、前記のように構成した本発明の一実施例による
研磨装置により研磨する方法の一実施例について、第１
図を参照しながら説明する。Next, one embodiment of a method of polishing by the polishing apparatus according to one embodiment of the present invention configured as described above will be described with reference to FIG.
This will be described with reference to the drawings.
研磨剤として、例えば平均粒径20nmの二酸化ケイ素
（SiO2）粒子を含み、PH10〜11に調節した研磨液を、圧
送ポンプにより研磨液供給路９を経由して回転定盤２の
上面に浸出させる。研磨液の浸出速度は、回転定盤２の
上面の1cm2あたり例えば毎分0.2cm3となるように流量調
節バルブをコントロールする。回転研磨テーブル１の回
転速度は、例えば周速が外周部において毎分30mとなる
ように選ぶ。A polishing liquid containing, for example, silicon dioxide (SiO 2 ) particles having an average particle diameter of 20 nm as a polishing agent and adjusted to PH 10 to 11 is leached onto the upper surface of the rotary platen 2 via a polishing liquid supply passage 9 by a pressure pump. Let it. Leaching rate of the polishing liquid, to control the flow rate control valve so as to be 1 cm 2 per example per minute 0.2 cm 3 of the upper surface of the rotating surface plate 2. The rotation speed of the rotary polishing table 1 is selected so that, for example, the peripheral speed is 30 m per minute at the outer peripheral portion.
この状態で、被研磨材料貼付ブロック11に例えば貼付
ワックス13により固定した５インチ・シリコンウェハの
ごとき被研磨材料12を、回転定盤２上面に、例えば100g
/cm2の研磨圧力で圧着し研磨を行う。30分で研磨を終了
した後、鏡面研磨されたシリコンウェハの平坦性を測定
し、第２図の曲線Ａの結果を得た。すなわち、５インチ
・シリコンウェハの被研磨面の最外周部においても研磨
厚みむらが0.2μｍであり、従来の研磨装置および研磨
方法による同じく５インチ・シリコンウェハの被研磨面
の測定結果Ｂと比較して数分の一の研磨厚みむらであ
り、例えば4M SRAMのステッピングアンドリピート露光
プロセスに充分対応できる平坦性であった。In this state, for example, 100 g of a material to be polished 12 such as a 5-inch silicon wafer fixed to the material to be polished attachment block 11 with a wax 13 is placed on the upper surface of the rotating platen 2, for example, 100 g.
Polishing is performed by pressing with a polishing pressure of / cm 2 . After the polishing was completed in 30 minutes, the flatness of the mirror-polished silicon wafer was measured, and the result of curve A in FIG. 2 was obtained. That is, even at the outermost peripheral portion of the surface to be polished of the 5-inch silicon wafer, the polishing thickness unevenness is 0.2 μm, which is compared with the measurement result B of the surface to be polished of the same 5-inch silicon wafer by the conventional polishing apparatus and polishing method. Then, the polishing thickness was uneven by a fraction, and the flatness was enough to cope with, for example, the stepping and repeat exposure process of 4M SRAM.
本実施例においては、回転定盤２の材料として、むら
なく均質な連続気孔をもつ多孔質硬化型発泡ポリウレタ
ン樹脂を用いたが、他の材料、例えば発泡エポキシ樹脂
等や、樹脂ビーズ焼結体で連続気孔を有する材料等を用
いることが可能である。すなわち、被研磨材料12より硬
度が小さく、しかも被研磨材料12の被研磨面に不純物と
しての悪影響を及ぼさない物質の中から、連続気孔をも
つ多孔質材料に加工して用いることができる。また被研
磨材料12としてはシリコンウェハのほかに、化合物半導
体ウェハ、さらには高透磁率フェライト等の高平坦性研
磨面を要求される材料に用いることが可能である。In the present embodiment, as the material of the rotary platen 2, a porous cured foamed polyurethane resin having uniform and continuous pores is used, but other materials such as a foamed epoxy resin or a resin bead sintered body are used. It is possible to use a material having continuous pores. That is, a material having a hardness lower than that of the material to be polished 12 and having no adverse effect as an impurity on the surface to be polished of the material to be polished 12 can be processed into a porous material having continuous pores. As the material to be polished 12, in addition to a silicon wafer, a compound semiconductor wafer, or a material requiring a highly flat polished surface such as ferrite with high magnetic permeability can be used.
〔発明の効果〕 以上、詳しく述べたように、本発明による研磨装置に
よれば、回転研磨テーブルに形成された凹部の底面と回
転定盤との間に供給されて回転定盤を浸透した研磨液
を、回転定盤の被研磨材料の被研磨面との当接面である
研磨面にむらなく均一に浸出させることができ、被研磨
材料の被研磨面と回転定盤の研磨面との間にむらなく均
一に供給することが可能となる。また、本発明の研磨方
法によれば、研磨レートを被研磨面全面にわたって均一
にすることができ、被研磨材料の被研磨面を高精度の平
坦度に研磨するとが可能となる。[Effects of the Invention] As described above in detail, according to the polishing apparatus of the present invention, the polishing is performed between the bottom surface of the concave portion formed in the rotary polishing table and the rotary platen and penetrates the rotary platen. The liquid can be uniformly leached uniformly on the polishing surface of the rotating surface plate, which is the contact surface with the surface to be polished of the material to be polished. It is possible to supply them evenly and evenly. Further, according to the polishing method of the present invention, the polishing rate can be made uniform over the entire surface to be polished, and the surface to be polished of the material to be polished can be polished with high precision flatness.
特にステップアンドリピート方によるマスクパターン
焼付に本発明により研磨した被研磨材料を用いた場合、
被研磨材料の外周部におけるパターン焼付精度が向上
し、従ってその歩留も向上すると共に、半導体素子等の
生産管理上の効果が大きい。In particular, when the material to be polished according to the present invention is used for mask pattern printing by the step-and-repeat method,
The accuracy of pattern printing on the outer peripheral portion of the material to be polished is improved, and thus the yield is also improved, and the effect on production management of semiconductor elements and the like is great.
第１図は本発明の研磨装置の概略断面図である。第２図
は被研磨材料の被研磨面の平坦性を示す図である。第３
図は従来の研磨装置の概略断面図である。 １……回転研磨テーブル ２……回転定盤 ３……回転台 ４……凹部 ５……側壁 ６……ノックピン ７……島状台座 ８……動力回転軸 ９……研磨液供給路 11……被研磨材料貼付ブロック 12……被研磨材料 13……貼付ワックス 21……研磨布 22……動力回転軸 23……回転台 24……研磨液供給ノズルFIG. 1 is a schematic sectional view of a polishing apparatus according to the present invention. FIG. 2 is a view showing the flatness of the surface to be polished of the material to be polished. Third
FIG. 1 is a schematic sectional view of a conventional polishing apparatus. DESCRIPTION OF SYMBOLS 1 ... Rotating polishing table 2 ... Rotating platen 3 ... Rotating table 4 ... Recess 5 ... Side wall 6 ... Knock pin 7 ... Island base 8 ... Power rotary shaft 9 ... Polishing liquid supply path 11 ... … Polishing material attaching block 12 …… Polishing material 13 …… Applied wax 21 …… Abrasive cloth 22 …… Power rotary shaft 23 …… Rotating table 24 …… Polishing liquid supply nozzle
Claims (2)
研磨材料を圧着して平面研磨をおこなう研磨装置におい
て、 前記回転研磨テーブルが、 前記被研磨材料の被研磨面との対向面に形成された凹部
と、 前記凹部の底面から均一な面密度で分散して突設された
複数の島状台座と、 前記凹部の側壁にその外周側面が密着嵌合するととも
に、前記島状台座の上面と当接する多孔質材料で構成さ
れた回転定盤とを有し、 前記底面と前記回転定盤との間に供給される研磨液が、
前記回転定盤を浸透して前記被研磨面と当接する研磨面
に浸出し供給されること を特徴とする研磨装置。1. A polishing apparatus for supplying a polishing liquid onto a rotary polishing table and pressing a material to be polished to perform planar polishing, wherein the rotary polishing table is provided on a surface of the material to be polished opposite to a surface to be polished. The formed recess, a plurality of island-shaped pedestals projecting from the bottom surface of the recessed portion at a uniform surface density, and the outer peripheral side surface is tightly fitted to the side wall of the recessed portion. A rotating surface plate made of a porous material in contact with the upper surface, the polishing liquid supplied between the bottom surface and the rotating surface plate,
A polishing apparatus, wherein the polishing apparatus is leached and supplied to a polishing surface that penetrates the rotary platen and contacts the surface to be polished.
すること を特徴とする研磨方法。2. A polishing method using the polishing apparatus according to claim 1, wherein polishing is performed while uniformly supplying a polishing liquid to a surface to be polished of a material to be polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63251894A JP2734007B2 (en) | 1988-10-07 | 1988-10-07 | Polishing apparatus and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63251894A JP2734007B2 (en) | 1988-10-07 | 1988-10-07 | Polishing apparatus and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02100321A JPH02100321A (en) | 1990-04-12 |
| JP2734007B2 true JP2734007B2 (en) | 1998-03-30 |
Family
ID=17229533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63251894A Expired - Fee Related JP2734007B2 (en) | 1988-10-07 | 1988-10-07 | Polishing apparatus and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2734007B2 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2833305B2 (en) * | 1991-12-05 | 1998-12-09 | 富士通株式会社 | Semiconductor substrate manufacturing method |
| US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
| US5658185A (en) * | 1995-10-25 | 1997-08-19 | International Business Machines Corporation | Chemical-mechanical polishing apparatus with slurry removal system and method |
| JP2865061B2 (en) * | 1996-06-27 | 1999-03-08 | 日本電気株式会社 | Polishing pad, polishing apparatus, and semiconductor device manufacturing method |
| US6004193A (en) * | 1997-07-17 | 1999-12-21 | Lsi Logic Corporation | Dual purpose retaining ring and polishing pad conditioner |
| US5816900A (en) * | 1997-07-17 | 1998-10-06 | Lsi Logic Corporation | Apparatus for polishing a substrate at radially varying polish rates |
| US6692338B1 (en) * | 1997-07-23 | 2004-02-17 | Lsi Logic Corporation | Through-pad drainage of slurry during chemical mechanical polishing |
| JP4358729B2 (en) * | 2004-12-22 | 2009-11-04 | 株式会社オーク製作所 | Short arc type discharge lamp |
| CN101223016B (en) | 2005-07-15 | 2012-02-29 | 东洋橡胶工业株式会社 | Manufacturing method of laminated sheet and laminated sheet |
| JP4884726B2 (en) | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | Manufacturing method of laminated polishing pad |
| KR101181885B1 (en) | 2006-09-08 | 2012-09-11 | 도요 고무 고교 가부시키가이샤 | Polishing pad |
| JP4465376B2 (en) * | 2006-09-08 | 2010-05-19 | 東洋ゴム工業株式会社 | Polishing pad manufacturing method |
| JP4465368B2 (en) * | 2006-09-08 | 2010-05-19 | 東洋ゴム工業株式会社 | Polishing pad |
| US8257153B2 (en) | 2007-01-15 | 2012-09-04 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| JP4593643B2 (en) | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | Polishing pad |
| CN102275124B (en) * | 2011-06-02 | 2014-03-05 | 友达光电（苏州）有限公司 | Grinding platform and grinding method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62102971A (en) * | 1985-10-28 | 1987-05-13 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for polishing |
| JPS63754U (en) * | 1986-06-18 | 1988-01-06 |
-
1988
- 1988-10-07 JP JP63251894A patent/JP2734007B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02100321A (en) | 1990-04-12 |
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