JP2723144B2 - Mold for optical element molding - Google Patents
Mold for optical element moldingInfo
- Publication number
- JP2723144B2 JP2723144B2 JP34269689A JP34269689A JP2723144B2 JP 2723144 B2 JP2723144 B2 JP 2723144B2 JP 34269689 A JP34269689 A JP 34269689A JP 34269689 A JP34269689 A JP 34269689A JP 2723144 B2 JP2723144 B2 JP 2723144B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- layer
- mold
- film
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光学素子成形用型に関する。Description: TECHNICAL FIELD The present invention relates to an optical element molding die.
近年、レンズ，プリズム，フィルタ等の光学素子の製
造方法として、一対の成形用型間に加熱軟化した光学素
子のガラス素材を挿入配置し、これを加圧するだけで光
学素子を得る押圧成形が行われている。In recent years, as a method of manufacturing an optical element such as a lens, a prism, and a filter, pressure molding has been performed in which a glass material of an optical element that has been softened by heating is inserted between a pair of molding dies, and the optical element is obtained only by pressing the glass material. Have been done.
従来、かかる押圧成形で用いる光学素子成形用型とし
ては、例えば、特開昭62−132734号公報に記載されてい
るように、SiCよりなる型基材に窒化物を被覆したもの
や、特開昭61−31321号公報に記載されているように、
プレス成形面を透光成窒化アルミニウム（AlN）または
透光性アルミナ（Al2O3）で形成したものや、特開昭62
−87423号公報に記載されているように、プレス成形面
を窒化クロム（Cr−Ｎ）で形成したもの等が知られてい
る。Conventionally, as an optical element molding die used in such press molding, for example, as described in JP-A-62-132734, a mold in which a nitride base material is coated on a mold base made of SiC, or As described in JP-A-61-31321,
The press-formed surface is formed of translucent aluminum nitride (AlN) or translucent alumina (Al 2 O 3 ).
As described in -87423, a press-formed surface formed of chromium nitride (Cr-N) is known.
しかし、上記従来の光学素子成形用型のように、CrN
やAlN等の窒化物やAl2O3からなる膜を形成したものは、
膜とSiC型基材との密着性が悪かった。このため、従来
の光学素子成形用型を用いて、ガラス光学素子を熱間加
熱成形をした場合、SiC型基材から窒化物膜やAl2O3膜が
剥離するという問題があった。However, like the conventional optical element molding die described above, CrN
And a film formed of nitride such as AlN or Al 2 O 3
The adhesion between the film and the SiC substrate was poor. For this reason, when a glass optical element is hot-heat molded using a conventional optical element molding die, there is a problem that a nitride film or an Al 2 O 3 film is peeled off from a SiC type substrate.
本発明は、かかる従来の問題点に鑑みてなされたもの
で、離型性が良好で、ガラスの焼き付きが生じず、膜剥
離がない光学素子成形用型を提供することを目的とす
る。The present invention has been made in view of such conventional problems, and has as its object to provide an optical element molding die which has good releasability, does not cause seizing of glass, and has no film peeling.
上記目的を達成するために、本発明は、SiCからなる
型基材の少なくとも成形基礎面にCrおよびAlを主成分と
する合金膜を形成し、この合金膜表面を窒化させること
によってCrおよびAlからなる窒化物層を形成し、この窒
化物層表面を酸化させることによって最表層（成形面）
にCrおよびAlからなる酸化物層を形成して光学素子成形
用型を構成したものである。In order to achieve the above object, the present invention provides an alloy film containing Cr and Al as a main component on at least a molding base surface of a mold base made of SiC, and nitriding the alloy film surface to form Cr and Al. The outermost layer (forming surface) by forming a nitride layer consisting of and oxidizing the surface of this nitride layer
An oxide layer made of Cr and Al is formed thereon to form an optical element molding die.
すなわち、第２図に示すように、SiC型基材１の成形
基礎面1aを所望の形状に鏡面加工し、その成形基礎面1a
上に、CrおよびAlを主成分としたCr−Al合金膜２を形成
する。次に、そのCr−Al合金膜２にＮイオンを50〜200k
Vの加速電圧で、1013〜1018 ion/cm2注入して、第３図に
示すように、Cr−Al合金膜２の表面層にCrおよびAlの窒
化物層であるCr−Al−Ｎ層３を形成させる。その後、こ
のCr−Al−Ｎ層３の表面にＯイオンを50〜200kVで1013
〜1018 ion/cm2注入して、表面を酸化させ、第１図に示
すように、最表層（成形面）にCr2O3およびα−Al2O3か
らなる酸化層４を形成する。または、Cr−Al−Ｎ層３を
形成させた後、その型を大気中で加熱することにより、
最表層にCr2O3およびα−Al2O3からなる酸化層４を形成
する。That is, as shown in FIG. 2, the forming base surface 1a of the SiC type base material 1 is mirror-finished into a desired shape, and the forming base surface 1a is
A Cr-Al alloy film 2 containing Cr and Al as main components is formed thereon. Next, N-ion is applied to the Cr-Al alloy film 2 for 50 to 200 k.
At an acceleration voltage of V, 10 13 to 10 18 ions / cm 2 were implanted, and as shown in FIG. 3, a Cr—Al— nitride layer of Cr and Al was formed on the surface layer of the Cr—Al alloy film 2. An N layer 3 is formed. Thereafter, O ions were applied to the surface of the Cr-Al-N layer 3 at 50 to 200 kV for 10 13.
The surface is oxidized by implanting 10 18 ions / cm 2 to form an oxide layer 4 made of Cr 2 O 3 and α-Al 2 O 3 on the outermost layer (molding surface) as shown in FIG. . Alternatively, after forming the Cr-Al-N layer 3, the mold is heated in the air,
An oxide layer 4 made of Cr 2 O 3 and α-Al 2 O 3 is formed on the outermost layer.
最表層のCr2O3およびα−Al2O3からなる酸化層４は、
格子エネルギーが大きく、不動態膜として働き、高温で
かつ大きな圧力でガラスが接触しても、ガラスとの融着
は生じない。The oxide layer 4 composed of Cr 2 O 3 and α-Al 2 O 3 on the outermost layer is
The lattice energy is large, it works as a passivation film, and even if glass contacts at high temperature and high pressure, fusion with glass does not occur.
また、Cr−Al−Ｎ層３は、非常に良好な耐酸化性と高
い硬度とを有しているため、耐久性に優れた成形面とな
る。Moreover, since the Cr-Al-N layer 3 has very good oxidation resistance and high hardness, it becomes a molded surface having excellent durability.
Cr−Al合金膜２は、SiC型基材１との密着性に優れ、
しかもCr−Al−Ｎ層３はCr−Al合金膜２の表面にＮイオ
ン注入することにより形成しており、最表層のCr2O3お
よびα−Al2O3からなる酸化層４もCr−Al−Ｎ層３の表
面にＯイオン注入するか、あるいは大気中での加熱によ
り形成しているため、Cr−Al合金膜２とCr−Al−Ｎ層３
およびCr−Al−Ｎ層３と酸化層４との間で明確な界面が
存在しない。従って、SiC型基材１から最表層の酸化層
４までのそれぞれの間で耐剥離性に優れている。The Cr-Al alloy film 2 has excellent adhesion to the SiC type substrate 1,
Moreover Cr-Al-N layer 3 Cr-Al on the surface of the alloy film 2 is formed by N ion implantation, oxide layer 4 consisting of the outermost layer of Cr 2 O 3 and alpha-Al 2 O 3 also Cr -O-ion implantation into the surface of the Al-N layer 3 or formation by heating in the air, the Cr-Al alloy film 2 and the Cr-Al-N layer 3
And there is no clear interface between the Cr—Al—N layer 3 and the oxide layer 4. Accordingly, the separation resistance is excellent between the SiC type substrate 1 and the outermost oxide layer 4.
（第１実施例） SiC型基材の上面を金型最終形状に鏡面加工し、成形
基礎面とした。その成形基礎面にスパッタ法により、Cr
−Al合金膜を0.5μｍの厚さで形成した。そして、このC
r−Al合金膜に加速電圧150kVで注入量２×1018 ion/cm2
のＮイオンを室温で注入し、CrNとAlNを形成した後、さ
らにその表面に加速電圧100kVで注入量1017 ion/cm2のＯ
イオンを室温で注入し、最表面にCr2O3およびα−Al2O3
を形成して光学素子成形用型を得た。(First Example) The upper surface of the SiC mold substrate was mirror-finished to the final shape of the mold, and used as a molding base surface. Cr is formed on the molding base surface by sputtering.
-An Al alloy film was formed with a thickness of 0.5 µm. And this C
Injection amount 2 × 10 18 ion / cm 2 into the r-Al alloy film at an acceleration voltage of 150 kV
O of the N ion implanted at room temperature to form a CrN and AlN, further injection volume 10 17 ion / cm 2 at an accelerating voltage 100kV on the surface
Ions are implanted at room temperature, and Cr 2 O 3 and α-Al 2 O 3
Was formed to obtain an optical element molding die.
このようにして得られた本実施例の光学素子成形用型
を用いて、光学ガラス素子を成形したところ、10000シ
ョットの成形でもガラスの焼き付きや膜剥離は全く発生
せず、型成形面に変化はなかった。これに対し、成形面
にCr−Ｎ膜を形成した従来の光学素子成形用型を用いて
同様の成形を行ったところ、5000ショット程度でガラス
の焼き付きや膜剥離が発生してしまった。When an optical glass element was molded using the optical element molding die of the present example thus obtained, no glass seizure or film peeling occurred even at 10,000 shots, and the mold surface changed. There was no. On the other hand, when similar molding was performed using a conventional optical element molding die having a Cr-N film formed on the molding surface, glass seizure and film peeling occurred at about 5,000 shots.
（第２実施例） 第１実施例と同様にして、Cr−Al合金膜表面層をＮイ
オン注入によって窒化させた型を、大気中1200℃で５時
間加熱し、最表層（成形面）にCr2O3およびα−Al2O3を
形成して、光学素子成形用型を得た。(Second Example) In the same manner as in the first example, a mold in which the surface layer of the Cr-Al alloy film was nitrided by N ion implantation was heated in the air at 1200 ° C. for 5 hours to form the outermost layer (formed surface). By forming Cr 2 O 3 and α-Al 2 O 3 , an optical element molding die was obtained.
このようにして得られた本実施例の光学素子用成形用
型を用いて、光学ガラス素子を成形したところ、10000
ショットの成形でもガラスの焼き付きや膜剥離は全く発
生せず、型成形面に変化はなかった。これに対し、型成
形面にAl−Ｎ膜を形成した従来の光学素子成形用型で
は、光学ガラス素子を成形した場合、数百ショットで膜
剥離を生じてしまった。When the optical glass element was molded using the optical element molding die of the present example thus obtained, 10000 was obtained.
No glass seizure or film peeling occurred in the shot molding, and there was no change in the molded surface. On the other hand, in the conventional optical element molding die in which the Al-N film is formed on the molding surface, when the optical glass element is molded, film peeling occurs in several hundred shots.
以上のように、本発明の光学素子成形用型によれば、
SiC型基材に直接窒化物を形成する方法に比べて型基材
との密着性に優れた膜が得られる上に、最表層を酸化さ
せてCr2O3およびα−Al2O3を形成することによって、ガ
ラスとの離型性が良好な成形面を得ることができ、光学
ガラス素子を加熱軟化して成形する場合にガラスの焼き
付きや膜剥離を生じることなしに長期間使用することが
できる。As described above, according to the optical element molding die of the present invention,
Compared to the method of forming nitride directly on the SiC type substrate, a film with excellent adhesion to the type substrate is obtained, and the outermost layer is oxidized to form Cr 2 O 3 and α-Al 2 O 3 By forming, it is possible to obtain a molded surface having good mold releasability from glass, and to use the optical glass element for a long time without burning or peeling of the film when the optical glass element is molded by heating and softening. Can be.
第１図は本発明の光学素子成形用型を示す縦断面図、第
２図は型基材にCr−Al合金膜を形成した状態を示す縦断
面図、第３図はCr−Al合金膜の表面にCr−Al−Ｎ層を形
成した状態を示す縦断面図である。 １……SiC型基材 1a……成形基礎面 ２……Cr−Al合金膜 ３……Cr−Al−Ｎ層 ４……酸化層FIG. 1 is a longitudinal sectional view showing an optical element molding die of the present invention, FIG. 2 is a longitudinal sectional view showing a state in which a Cr-Al alloy film is formed on a mold substrate, and FIG. 3 is a Cr-Al alloy film. FIG. 4 is a longitudinal sectional view showing a state in which a Cr—Al—N layer is formed on the surface of FIG. DESCRIPTION OF SYMBOLS 1 ... SiC type base material 1a ... Formation base surface 2 ... Cr-Al alloy film 3 ... Cr-Al-N layer 4 ... Oxide layer
Claims (1)
面にCrおよびAlを主成分とする合金膜を形成し、この合
金膜表面を窒化させることによってCrおよびAlからなる
窒化物層を形成し、この窒化物層表面を酸化させること
によって最表層にCrおよびAlからなる酸化物層を形成し
たことを特徴とする光学素子成形用型。An alloy film containing Cr and Al as a main component is formed on at least a forming base surface of a mold substrate made of SiC, and a nitride layer made of Cr and Al is formed by nitriding the alloy film surface. An optical element molding die, wherein an oxide layer made of Cr and Al is formed on the outermost layer by oxidizing the surface of the nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34269689A JP2723144B2 (en) | 1989-12-28 | 1989-12-28 | Mold for optical element molding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34269689A JP2723144B2 (en) | 1989-12-28 | 1989-12-28 | Mold for optical element molding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03199187A JPH03199187A (en) | 1991-08-30 |
| JP2723144B2 true JP2723144B2 (en) | 1998-03-09 |
Family
ID=18355790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34269689A Expired - Fee Related JP2723144B2 (en) | 1989-12-28 | 1989-12-28 | Mold for optical element molding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2723144B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2612627B2 (en) * | 1990-01-22 | 1997-05-21 | キヤノン株式会社 | Mold for optical element molding |
-
1989
- 1989-12-28 JP JP34269689A patent/JP2723144B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03199187A (en) | 1991-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |