JP2715879B2 - Magnetoresistive element - Google Patents
Magnetoresistive elementInfo
- Publication number
- JP2715879B2 JP2715879B2 JP5332871A JP33287193A JP2715879B2 JP 2715879 B2 JP2715879 B2 JP 2715879B2 JP 5332871 A JP5332871 A JP 5332871A JP 33287193 A JP33287193 A JP 33287193A JP 2715879 B2 JP2715879 B2 JP 2715879B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance element
- stripe
- magnetoresistive
- thin film
- stripe patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気信号の検出に使用
される磁気抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element used for detecting a magnetic signal.
【０００２】[0002]
【従来の技術】磁気抵抗素子は、磁気抵抗効果を有する
強磁性体薄膜より成るストライプを有するものであっ
て、磁気信号の検出に使用される。このような磁気抵抗
素子の一例が図４に示されている。この磁気抵抗素子
は、図３に示すように強磁性体薄膜から成る。そのスト
ライプ（長手方向のパターン）がほぼ平行になるように
折り返し配置された同一形状の抵抗要素５１Ａ，５１
Ｂ，５１Ｃ，５１Ｄを絶縁基板５２上に形成し、かつブ
リッジに接続した構造を有する。磁気抵抗要素５１Ａ，
５１Ｂ，５１Ｃ，５１Ｄの抵抗変化率の差で生じる中点
電圧の変化が、磁界の強度の変化として検出される。一
般にかかる用途の磁気抵抗素子は、図４に示すように、
磁気抵抗素子のブリッジ回路６１を構成する。そして、
差動増幅回路６２を介し出力信号を増幅して検出する方
法が用いられている。2. Description of the Related Art A magnetoresistive element has a stripe made of a ferromagnetic thin film having a magnetoresistive effect, and is used for detecting a magnetic signal. FIG. 4 shows an example of such a magnetoresistive element. This magnetoresistive element is made of a ferromagnetic thin film as shown in FIG. Resistive elements 51A, 51 of the same shape that are folded back so that the stripes (patterns in the longitudinal direction) are substantially parallel
B, 51C and 51D are formed on an insulating substrate 52 and connected to a bridge. The magnetoresistive element 51A,
A change in the midpoint voltage caused by a difference between the resistance change rates of 51B, 51C, and 51D is detected as a change in the strength of the magnetic field. Generally, a magnetoresistive element for such an application is, as shown in FIG.
The bridge circuit 61 of the magnetoresistive element is configured. And
A method of amplifying and detecting an output signal via a differential amplifier circuit 62 is used.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の磁気抵
抗素子では、図３に示すように、４つの抵抗要素の各々
の抵抗値が同じとなるように設計され差動増幅回路５２
の入力端子５２Ａ，５２Ｂの中点電圧が無磁界時にＯＶ
であるのが理想である。しかし、強磁性体薄膜からなる
薄膜フォトリソ工程で製造される４つの抵抗要素を同じ
抵抗値とすることは困難であり、中点電圧がばらつくと
いう欠点を有している。In the above-described conventional magnetoresistive element, as shown in FIG. 3, the differential amplifier circuit 52 is designed so that the resistance values of the four resistance elements are the same.
When the midpoint voltage of the input terminals 52A and 52B of the
Ideally, However, it is difficult to make the four resistance elements manufactured in the thin film photolithography process made of a ferromagnetic thin film the same resistance value, and there is a drawback that the midpoint voltage varies.
【０００４】本発明の目的は、このような欠点を除去
し、中点電圧の選択を可能にする磁気抵抗素子を提供す
ることにある。An object of the present invention is to provide a magnetoresistive element which eliminates such disadvantages and enables selection of a midpoint voltage.
【０００５】[0005]
【課題を解決するための手段】上記目的を解決するた
め、本発明は、磁気抵抗効果を有する強磁性体薄膜によ
り形成された互いに平行な複数の第１のストライプパタ
ーンとこの第１のストライプパターンをそれぞれ直列に
接続する折り返し部とを含む第１の抵抗要素と、第１の
ストライプパターンに平行であって磁気抵抗効果を有す
る強磁性体薄膜により形成された複数の第３のストライ
プパターンとこの第３のストライプパターンをそれぞれ
直列に接続する第３の折り返し部とを含む第３の抵抗要
素と、第１のストライプパターンに垂直であって磁気抵
抗効果を有する強磁性体薄膜により形成された複数の第
２のストライプパターンと該第２のストライプパターン
をそれぞれ直列に接続する第２の折り返し部とを含む第
２の抵抗要素と、第１のストライプパターンに垂直であ
って磁気抵抗効果を有する強磁性体薄膜により形成され
た複数の第４のストライプパターンとこの第４のストラ
イプパターンをそれぞれ直列に接続する第４の折り返し
部とを含む第４の抵抗要素とを備えている。また、第１
の抵抗要素と第２の抵抗要素の間および第３の抵抗要素
と第４の抵抗要素の間にそれぞれ第１の入力端子および
第２の入力端子が、第１の抵抗要素と第４の抵抗要素の
間には第１の出力端子が配置されている。そして、複数
ある第２の折り返し部のうちの少なくとも２以上の折り
返し部が選択的に外部に接続される第２の出力端子を備
えている。また、第２の出力端子のうち、磁気抵抗素子
の中点電圧がゼロとなる第２の出力端子が外部に接続さ
れていることを特徴としている。 In order to achieve the above object, the present invention provides a ferromagnetic thin film having a magnetoresistive effect.
A plurality of first stripe patterns formed in parallel with each other
And the first stripe pattern in series
A first resistance element including a folded portion to be connected;
Parallel to the stripe pattern and has a magnetoresistive effect
A plurality of third stripes formed by a ferromagnetic thin film
And the third stripe pattern
A third resistor element including a third folded portion connected in series;
Element and a magnetic resistance perpendicular to the first stripe pattern.
A plurality of first layers formed by a ferromagnetic thin film having an anti-effect effect
2 stripe pattern and the second stripe pattern
And a second folded portion respectively connecting the
2 resistive elements and perpendicular to the first stripe pattern.
Formed by a ferromagnetic thin film having a magnetoresistive effect
A plurality of fourth stripe patterns and the fourth stripe pattern.
The fourth fold that connects the IP patterns in series
And a fourth resistance element including a second resistance element. Also, the first
Between the first and second resistance elements and the third resistance element
A first input terminal and a fourth input terminal between the
The second input terminal is connected to the first resistance element and the fourth resistance element.
A first output terminal is arranged between them. And multiple
Folding of at least two or more of a certain second folded portion
The return section has a second output terminal selectively connected to the outside.
I have. Also, among the second output terminals, the magnetoresistive element
The second output terminal at which the midpoint voltage becomes zero is
It is characterized by having been.
【０００６】[0006]
【実施例】次に図面を参照して本発明を詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the drawings.
【０００７】 図１は、本発明の磁気抵抗素子の一例を
示す平面図である。図１の磁気抵抗素子は、絶縁基板５
の上に強磁性体薄膜を形成し、フォトリソグラフ技術を
用いてストライプが平行になるように折り返し配置され
た抵抗要素１と、さらに、ストライプが折り返され、か
つ複数個の出力端子を供えた抵抗要素２が直列に接続さ
れている。さらにストライプが折り返された抵抗要素４
と抵抗要素３によりブリッジ構造を形成している。FIG. 1 is a plan view showing an example of the magnetoresistive element of the present invention. Magnetoresistive element of FIG. 1, the insulating substrate 5
A resistive element 1 in which a ferromagnetic thin film is formed thereon and which is folded back using photolithographic technology so that the stripes are parallel to each other, and a resistor in which the stripe is folded back and has a plurality of output terminals Element 2 is connected in series. Furthermore, the resistance element 4 in which the stripe is folded back
And the resistance element 3 form a bridge structure.
【０００８】 また、入力端子８は、抵抗要素１と抵抗
要素２との接続部分に設けられている。同様にして、入
力端子９は抵抗要素３と抵抗要素４との接続部分に設け
られ、出力端子６は抵抗要素１と抵抗要素４との接続部
分に設けられ、出力端子７，７′，７″は抵抗要素２の
折り返し部分に複数個設けられている。The input terminal 8 is provided at a connection between the resistance element 1 and the resistance element 2. Similarly, the input terminal 9 is provided at the connection between the resistance element 3 and the resistance element 4, the output terminal 6 is provided at the connection between the resistance element 1 and the resistance element 4, and the output terminals 7, 7 ', 7 "" Are provided in plural at the folded portion of the resistance element 2.
【０００９】さらに抵抗要素１の長手方向は、抵抗要素
２の長手方向および抵抗要素４の長手方向と直角になっ
ている。抵抗要素３の長手方向は、抵抗要素１の長手方
向と平行になっている。このような磁気抵抗素子の等価
回路が図２に示されている。図２に示されるよう、抵抗
要素１，２，３，４がブリッジとなっている。Further, the longitudinal direction of the resistance element 1 is perpendicular to the longitudinal direction of the resistance element 2 and the longitudinal direction of the resistance element 4. The longitudinal direction of the resistance element 3 is parallel to the longitudinal direction of the resistance element 1. FIG. 2 shows an equivalent circuit of such a magnetoresistive element. As shown in FIG. 2, the resistance
Elements 1, 2, 3, and 4 are bridges.
【００１０】次に、図１の磁気抵抗素子の中点電圧の選
択方法について説明する。Next, a method of selecting the midpoint voltage of the magnetoresistive element of FIG. 1 will be described.
【００１１】磁気抵抗素子の中点電圧を選択する場合、
フォトリソグラフィ技術を用いて製造された磁気抵抗チ
ップ上の入力端子８と９との間に電源２１が印加され、
さらに、電圧計２２が出力端子６と出力端子の７″との
間に接続される。そして、無磁界のとき中点電圧がＯＶ
になるように選択するには、図２に示されるように、磁
気抵抗素子に電源１が加えられ、その結果、電圧計２２
の指示が目的とする中点電圧たとえばＯＶにならない場
合は出力端子７′に接続しなおし、中点電圧を測定す
る。さらに目的とする中点電圧でない場合は、出力端子
７に接続しなおし、中点電圧を測定する。When selecting the midpoint voltage of the magnetoresistive element,
A power supply 21 is applied between the input terminals 8 and 9 on the magnetoresistive chip manufactured using the photolithography technique,
Further, a voltmeter 22 is connected between the output terminal 6 and the output terminal 7 ″. When there is no magnetic field, the midpoint voltage is OV.
2, the power supply 1 is applied to the magnetoresistive element, as shown in FIG.
If the instruction does not become the target midpoint voltage, for example, OV, the output terminal 7 'is reconnected and the midpoint voltage is measured. Further, if the voltage is not the target midpoint voltage, the output terminal 7 is connected again, and the midpoint voltage is measured.
【００１２】このように目的とする中点電圧となる出力
端子７，７′，７″を選択することによってブリッジの
中点電圧を調整する。Thus, the midpoint voltage of the bridge is adjusted by selecting the output terminals 7, 7 ', 7 "which become the target midpoint voltage.
【００１３】[0013]
【発明の効果】以上説明したように、本発明は、強磁性
体薄膜から成る複数のストライプを各々のストライプが
平行になるように、多数回、折り返した構造の抵抗要素
と、複数の並列接続されたストライプパターンで構成さ
れた抵抗要素とでブリッジ接続され、フォトリソグラフ
ィ技術で製造された磁気抵抗素子のチップを後から、複
数の直列接続された第２の抵抗要素の一部出力端子７，
７′，７″を選択して中点電圧を調整できることから特
性バラツキの少ない磁気検出回路を作成できる効果を有
する。As described above, according to the present invention, a resistive element having a structure in which a plurality of stripes made of a ferromagnetic thin film are folded many times so that each stripe is parallel, and a plurality of parallel connections are provided. The chip of the magnetoresistive element, which is bridge-connected with the resistive element constituted by the formed stripe pattern and manufactured by the photolithography technique, is later connected to the partial output terminals 7, 2 of the plurality of second resistive elements connected in series.
Since the midpoint voltage can be adjusted by selecting 7 ′ and 7 ″, there is an effect that a magnetic detection circuit with little characteristic variation can be created.
【図１】本発明に係る磁気抵抗素子の一例を示す平面
図。FIG. 1 is a plan view showing an example of a magnetoresistive element according to the present invention.
【図２】図１の磁気抵抗素子の等価回路。FIG. 2 is an equivalent circuit of the magnetoresistive element of FIG.
【図３】従来の磁気抵抗素子の一例を示す平面図。FIG. 3 is a plan view showing an example of a conventional magnetoresistive element.
【図４】図３の磁気抵抗素子の等価回路及び検出回路を
示す図。FIG. 4 is a diagram showing an equivalent circuit and a detection circuit of the magnetoresistive element in FIG. 3;
１〜４ 抵抗要素 ６〜７，７′，７″ 出力端子 ５ 磁気抵抗素子 ８〜９ 入力端子 1-4 resistance element 6-7, 7 ', 7 "output terminal 5 magnetoresistive element 8-9 input terminal
Claims (2)
り形成された互いに平行な複数の第１のストライプパタ
ーンと該第１のストライプパターンをそれぞれ直列に接
続する折り返し部とを含む第１の抵抗要素と、 前記第１のストライプパターンに平行であって、磁気抵
抗効果を有する強磁性体薄膜により形成された複数の第
３のストライプパターンと該第３のストライプパターン
をそれぞれ直列に接続する第３の折り返し部とを含む第
３の抵抗要素と、 前記第１のストライプパターンに垂直であって、磁気抵
抗効果を有する強磁性体薄膜により形成された複数の第
２のストライプパターンと該第２のストライプパターン
をそれぞれ直列に接続する第２の折り返し部とを含む第
２の抵抗要素と、 前記第１のストライプパターンに垂直であって、磁気抵
抗効果を有する強磁性体薄膜により形成された複数の第
４のストライプパターンと該第４のストライプパターン
をそれぞれ直列に接続する第４の折り返し部とを含む第
４の抵抗要素と、 前記第１の抵抗要素と前記第２の抵抗要素の間および前
記第３の抵抗要素と前記第４の抵抗要素の間にそれぞれ
配置される第１の入力端子および第２の入力端子と、 前記第１の抵抗要素と前記第４の抵抗要素の間に配置さ
れる第１の出力端子とを備え、さらに、 複数ある前記第２の折り返し部のうちの少なくとも２以
上の折り返し部が選択的に外部に接続される第２の出力
端子を備えていることを特徴とする磁気抵抗素子。1. A first resistor including a plurality of first stripe patterns formed of a ferromagnetic thin film having a magnetoresistive effect and being parallel to each other, and a folded portion connecting each of the first stripe patterns in series. An element, a plurality of third stripe patterns parallel to the first stripe pattern and formed of a ferromagnetic thin film having a magnetoresistance effect, and a third stripe pattern connecting the third stripe patterns in series, respectively. A plurality of second stripe patterns perpendicular to the first stripe pattern and formed of a ferromagnetic thin film having a magnetoresistive effect; A second resistive element including a second folded portion that connects the stripe patterns in series, and a second resistance element that is perpendicular to the first stripe pattern; A fourth resistance element including a plurality of fourth stripe patterns formed of a ferromagnetic thin film having a magnetoresistive effect and a fourth folded portion that connects the fourth stripe patterns in series, respectively; A first input terminal and a second input terminal respectively arranged between a first resistance element and the second resistance element and between the third resistance element and the fourth resistance element; A first output terminal disposed between the first resistance element and the fourth resistance element, and at least two or more of the plurality of second return parts are selectively externally connected. A second output terminal connected to the magnetoresistive element.
抗素子の中点電圧がゼロとなる前記第２の出力端子が外
部に接続されていることを特徴とする請求項１記載の磁
気抵抗素子。Wherein one of the second output terminals, magnetic according to claim 1, wherein the second output terminal of the midpoint voltage of the magnetoresistive element becomes zero, characterized in that it is connected to an external <br/> An air resistance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5332871A JP2715879B2 (en) | 1993-12-27 | 1993-12-27 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5332871A JP2715879B2 (en) | 1993-12-27 | 1993-12-27 | Magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07191120A JPH07191120A (en) | 1995-07-28 |
| JP2715879B2 true JP2715879B2 (en) | 1998-02-18 |
Family
ID=18259740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5332871A Expired - Lifetime JP2715879B2 (en) | 1993-12-27 | 1993-12-27 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2715879B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102841324A (en) * | 2012-09-05 | 2012-12-26 | 复旦大学 | Circuit structure for anisotropic magnetic resistance device |
| JP2020112430A (en) * | 2019-01-11 | 2020-07-27 | パナソニックＩｐマネジメント株式会社 | Magnetic sensor and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068378A (en) * | 1973-10-20 | 1975-06-07 | ||
| JPS5948967B2 (en) * | 1979-10-18 | 1984-11-30 | 正視 荒木 | How to fill ice cream |
-
1993
- 1993-12-27 JP JP5332871A patent/JP2715879B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07191120A (en) | 1995-07-28 |
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